Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/40—Crystalline structures
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/0021—Reactive sputtering or evaporation
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
  • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
  • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants

Definitions

• the present invention relates to a semiconducting material and a method for producing the same, in particular, a) a semiconducting material and a method for producing the semiconducting material comprising amorphous silicon (hereinafter referred to as “a-silicon”). It is about.
• a-silicon amorphous silicon
• crystalline silicon is widely used as a suitable semiconductor material.
• crystalline silicon requires a crystal growth step in its manufacture and must be made into a thin layer ⁇ : in order to be used in actual semiconductor devices.
• a thin layer forming process is required, there is a drawback that a large amount of time and labor is required, and the cost is high.
• a-silicon is very advantageous in that it does not require a crystal growth step and can easily obtain a large-area thin layer.
• a-silicon is amorphous because of its irregular atomic arrangement structure.]? In other words, there are many dangling bonds in which the covalent bond remains broken. Until then, there are many gap states, and the doping efficiency is low, and the usefulness as a practical semiconductor material is extremely small. At the very least, it is low. This is because when extremely high doping is required to obtain the required conductivity type, such high doping is performed. As a result, the assembling state of the obtained &-silicon is changed, and the carrier (electron or hole) generated by doping has low mobility and is unstable. become a ⁇ want, is possible to get a binding stations valid de over pin grayed effect Ru can such Karadea ⁇
• an a-silicon into which such a hydrogen atom is introduced is one that can provide a practically effective doping efficiency.] And it may be useful as a semiconductor material. It has become known.
• a method for obtaining such a-silicon into which a hydrogen atom has been introduced a known method such as a green discharge method, a sputtering method, an ion plating method, or a vapor deposition method is known.
• the present invention has been made based on the above-mentioned circumstances, and is based on the fact that the conductivity type having good semiconductor characteristics is n-type or i-type.
• the purpose is to provide a semiconductor material class.
• Another object of the present invention is to provide a method capable of producing the above-mentioned semiconductor material family advantageously and reliably.
• a feature of the semiconductor material family of the present invention is that the a-silicon contains 0,001 to 5 atoms of aluminum and has hydrogen atoms introduced.
• ⁇ Type is n-type or i-type At one point.
• a feature of the method of the present invention is that, in the presence of active hydrogen and hydrogen ignited by the discharge of hydrogen gas in a vacuum chamber, a silicon provided in the vacuum chamber is provided. From the steam source and from the aluminum steam source provided in the vacuum cycle.]? on a plate which was Hai ⁇ into the vacuum Mayumi, ⁇ Le Mi - a is ⁇ beam contains hydrogen is introduced - sheet lies in allowed to form forming a re con ⁇
• a semiconductor device having an i-type conductivity type is used as a semiconductor material.
• Fig. 1 is a quartz plate! ?
• a contact layer 32 and an intrinsic semiconductor provided on the contact layer 32 (the conduction type is referred to as "i-type" in this specification).
• An active layer 33 composed of a-silicon in this state] and a metal such as platinum, gold, palladium, etc., having a large function, provided on the active layer 33]?
• semiconductor layers other than p-type semiconductor layers, that is, n-type contact layers 32 and active layers 33 are formed. It is formed by hydrogen-introduced a-silicon containing 0.001 to 5 atoms of aluminum.
• FIG. 2 shows a substrate 4 composed of a metal plate], a contact layer 32 composed of an n-type a-silicon, and a contact layer 32 composed of an i-type a-silicon.
• the n-type contact layer 32 and the active layer 33 are formed in the same manner as in the above-described example.
• the i-type layer 33A is formed of a-silicon containing aluminum and having hydrogen atoms introduced therein.
• FIG. 3 shows a channel forming layer 41 composed of an i-type a-silicon]? On an insulating substrate 4 and two n-type a-silicon!]? source layer 42 and drain layer 43, and insulating layer 44 consisting of silicon oxide]?
• the gate electrode 45 provided on the source layer 41 and the source electrode 46 and the drain electrode 47 provided on the source layer 42 and the drain layer 43 are referred to as a source electrode 46 and a drain electrode 47, respectively.
• FIG. 4 shows an aluminum-based substrate.
• An example of an electronic copying machine photosensitive device provided with an electric layer 51 is shown below.
• the channel forming layer 41, the source layer 42, and the drain layer 43, which are n-type or i-type semiconductor layers, and the photoconductive layer 51 are already formed.
• the hydrogen atoms containing aluminum are formed by the guided a-silicon.
• the amount of aluminum is usually 0.001 to 5 atoms, and when forming an n-type layer, 0.001 to 5 atoms of aluminum is used.
• an element of group V of the periodic table such as antimony may be further contained. 3 ⁇ 4
• To form a p-type layer simply use the ⁇ ! : Inclusion of group elements.
• the reason why i-type a-silicon can be obtained while containing aluminum is that when a-silicon does not dope at all, it becomes weak n-type. This is because the cause is not clear.
• the content of the required Aluminum um in the i-type and order is a - shea Li co depends down state] 3, is no to the that fixedly Sadama. However, when the aluminum content exceeds 5 atoms, the a_silicon is always of p-type.
• the semiconductive material of the present invention is as described above! ), which has a prominent semiconducting special law, as will be clear from the explanation of the experimental trial described below. That is, it has a small dark conductivity and a large photoconductivity, exhibits excellent photoresponse, and has a large doping efficiency and a large operational gear. It has a head.
• the semiconductor material of the present invention as described above can be manufactured, for example, as follows. That is, as shown in FIG. 5, a vacuum bobbin (not shown) is connected to an exhaust pipe 3 having a butterfly valve 2 in a barrel 11 forming a vacuum chamber. Connect to this.].
• the inside of the corresponding pellet 1 is set to a high vacuum state of, for example, 10 ⁇ 3; I 17 Torr, and the substrate 4 is placed in the corresponding pellet 1. This is heated to a temperature of 150 to 500 ° C by heater 5, preferably to 250 to 450 t :, and to 110 kV to substrate 4 by DC current 6.
• a DC negative voltage of 16 kV is applied, and the hydrogen gas discharge tube 7 provided with the outlet connected to the outlet 11 so that the outlet faces the plate 4! ?
• the silicon evaporation source 8 provided so as to face the substrate 4 is heated to evaporate the silicon
• the aluminum vapor 10 provided in the same manner is heated to evaporate the aluminum at the same time, so that aluminum is contained on the substrate 4 and contains hydrogen atoms.
• a doping agent evaporation ⁇ 12 is further provided in the pellicle 11 to obtain a group V or a group V.
• group V element For example, antimony, phosphorus, arsenic, etc.
• group element indium and gallium can be mentioned as preferred.
• the heating temperature of each evaporator may be slightly higher than the temperature of each element.
• the evaporation of aluminum is usually carried out by adding 700 to L: 00C. S is the shatter of each evaporation. Then, aluminum evaporation together with silicon evaporation ⁇ 8 and aluminum evaporation ⁇ 10
• the ratio of the formed a-, aluminum-containing aluminum and further the amount of the doping agent is controlled.
• the heating of the silicon vapor 8 and the aluminum vapor 10 and the heating agent 12 ′ for example, resistance ripening, electron beam heating, induction heating, etc. Any heating means can be used. Then, it is necessary to avoid that the coarse particles of the evaporative mixed substance fly and adhere to the substrate 4]. It is possible to use a member for preventing the scattering of large-sized aggregates.
• one end of a cylindrical electrode portion having a gas inlet 21 and a material 22 is provided.
• the oxygen gas supplied through the gas inlet 2.1 generates a global discharge in the discharge space 23, thereby being activated in an electron energy manner.
• Active hydrogen consisting of hydrogen atoms or molecules and ionized hydrogen ions are at the outlet 25! ? Emitted.
• the discharge space member 24 in the illustrated example has a double pipe structure and has a configuration that allows cooling water to flow through, and 27 and 28 indicate cooling water inlets and outlets.
• Reference numeral 29 denotes a 7-inch electrode for cooling one electrode member 22.
• the distance between the electrodes in the hydrogen gas discharge tube 7 is 1015 csi] 3, and the applied voltage is 500 to 800 V % .
• the pressure in the discharge space 23 is about 10 to 12 rr. It is said.
• a_silicon is carried out by vapor deposition of silicon in the presence of active hydrogen and hydrogen ion obtained by discharging a water accumulation gas. And at the same time, wear aluminum to ensure that aluminum is contained and contained.
• the dangling bond is sealed by a hydrogen atom to obtain Tta-silicon.
• control of the substrate heating temperature and applied voltage, control of the silicon evaporation rate ⁇ , control of the amount of hydrogen gas supplied to the hydrogen gas discharge tube 7, and control of the discharge voltage E Since the degree and amount of active hydrogen introduced into the reactor 1 and the amount of hydrogen ion can be controlled independently, a-silicon having desired good characteristics can be obtained.
• precise control of the aluminum evaporation rate by controlling the degree of heating of the aluminum evaporation source 10 is possible with great freedom. , By controlling the proportion of the aluminum contained to be in the range of 0,001 to 5 atoms, and by further controlling the content to be a specific proportion.
• a-Silicon can also be obtained reliably.
• the content of the doping agent should be controlled in the same way])
• a-silicon containing the desired n-type aluminum-palladium and introduced with hydrogen atoms Can be obtained.
• FIG. 1 to 4 are cross-sectional views illustrating a configuration of an example of a semiconductor device suitable for the embodiment of the present invention.
• FIG. 5 is an explanatory diagram illustrating an example of a device g used for implementing the present invention.
• FIG. 6 is an explanatory cross-sectional view showing an example of a hydrogen gas discharge tube.
• the silicon evaporation source 8 and the aluminum vapor source 10 are both heated by the resistance heating method and are placed on the substrate 4.
• A-silicon containing aluminum and into which hydrogen atoms have been introduced is vapor-deposited for 16.5 minutes and a-silicon having a thickness of about 500 A is obtained.
• the vaporization rate of aluminum in the aluminum vapor is changed by changing the vaporization rate of aluminum in the a-silicon layer containing aluminum in various proportions. ! ).
• the heating temperature of the aluminum steam 10 was about 700.
• the semiconductor material of the present invention has good characteristics, can be sufficiently used for practical use, and provides an excellent semiconductive material.
• an n-type or i-type semiconducting material having good semiconducting characteristics and a-silicon it is possible to provide a method capable of advantageously and reliably producing the semiconductor forestry or the semiconductor device made of the semiconductor material.

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• Chemical & Material Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Engineering & Computer Science (AREA)
• Materials Engineering (AREA)
• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
• Chemical Vapour Deposition (AREA)
• Photovoltaic Devices (AREA)
• Light Receiving Elements (AREA)
• Silicon Compounds (AREA)

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• 1981
  • 1981-09-26 JP JP56151423A patent/JPS5855327A/ja active Granted
• 1982
  • 1982-09-25 WO PCT/JP1982/000386 patent/WO1983001151A1/ja active Application Filing

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