JPH0430196B2 - - Google Patents

Info

Publication number
JPH0430196B2
JPH0430196B2 JP56167435A JP16743581A JPH0430196B2 JP H0430196 B2 JPH0430196 B2 JP H0430196B2 JP 56167435 A JP56167435 A JP 56167435A JP 16743581 A JP16743581 A JP 16743581A JP H0430196 B2 JPH0430196 B2 JP H0430196B2
Authority
JP
Japan
Prior art keywords
layer
silicon
antimony
substrate
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56167435A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5868971A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP56167435A priority Critical patent/JPS5868971A/ja
Publication of JPS5868971A publication Critical patent/JPS5868971A/ja
Publication of JPH0430196B2 publication Critical patent/JPH0430196B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
JP56167435A 1981-10-19 1981-10-19 太陽電池の製造方法 Granted JPS5868971A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56167435A JPS5868971A (ja) 1981-10-19 1981-10-19 太陽電池の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56167435A JPS5868971A (ja) 1981-10-19 1981-10-19 太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JPS5868971A JPS5868971A (ja) 1983-04-25
JPH0430196B2 true JPH0430196B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-05-21

Family

ID=15849647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56167435A Granted JPS5868971A (ja) 1981-10-19 1981-10-19 太陽電池の製造方法

Country Status (1)

Country Link
JP (1) JPS5868971A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4251289A (en) * 1979-12-28 1981-02-17 Exxon Research & Engineering Co. Gradient doping in amorphous silicon

Also Published As

Publication number Publication date
JPS5868971A (ja) 1983-04-25

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