JPS5868971A - 太陽電池の製造方法 - Google Patents

太陽電池の製造方法

Info

Publication number
JPS5868971A
JPS5868971A JP56167435A JP16743581A JPS5868971A JP S5868971 A JPS5868971 A JP S5868971A JP 56167435 A JP56167435 A JP 56167435A JP 16743581 A JP16743581 A JP 16743581A JP S5868971 A JPS5868971 A JP S5868971A
Authority
JP
Japan
Prior art keywords
layer
substrate
silicon
antimony
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56167435A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0430196B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Masanari Shindo
新藤 昌成
Tatsuo Oota
達男 太田
Shigeru Sato
滋 佐藤
Tetsuo Shima
徹男 嶋
Isao Myokan
明官 功
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP56167435A priority Critical patent/JPS5868971A/ja
Publication of JPS5868971A publication Critical patent/JPS5868971A/ja
Publication of JPH0430196B2 publication Critical patent/JPH0430196B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/62Electrodes ohmically coupled to a semiconductor

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
JP56167435A 1981-10-19 1981-10-19 太陽電池の製造方法 Granted JPS5868971A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56167435A JPS5868971A (ja) 1981-10-19 1981-10-19 太陽電池の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56167435A JPS5868971A (ja) 1981-10-19 1981-10-19 太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JPS5868971A true JPS5868971A (ja) 1983-04-25
JPH0430196B2 JPH0430196B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-05-21

Family

ID=15849647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56167435A Granted JPS5868971A (ja) 1981-10-19 1981-10-19 太陽電池の製造方法

Country Status (1)

Country Link
JP (1) JPS5868971A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56101741A (en) * 1979-12-28 1981-08-14 Exxon Research Engineering Co Density gradient doping method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56101741A (en) * 1979-12-28 1981-08-14 Exxon Research Engineering Co Density gradient doping method

Also Published As

Publication number Publication date
JPH0430196B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-05-21

Similar Documents

Publication Publication Date Title
US4492716A (en) Method of making non-crystalline semiconductor layer
US4443488A (en) Plasma ion deposition process
US4120700A (en) Method of producing p-n junction type elements by ionized cluster beam deposition and ion-implantation
US5387542A (en) Polycrystalline silicon thin film and low temperature fabrication method thereof
JPH0143449B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US20010003677A1 (en) Plasma & reactive ion etching to prepare ohmic contacts
US4702965A (en) Low vacuum silicon thin film solar cell and method of production
JPS5868971A (ja) 太陽電池の製造方法
JPH079059B2 (ja) 炭素薄膜の製造方法
JPH0524976A (ja) 半導体のドーピング方法及び装置
JPS61256625A (ja) 薄膜半導体素子の製造方法
JPS61189625A (ja) 堆積膜形成法
JPS5837247B2 (ja) アモルフアスシリコンの製造方法
JPS5855328A (ja) アモルフアスシリコンの製造方法
JPS5976419A (ja) p型シリコン膜の製造方法
US3960421A (en) Method of manufacturing a non-thermally emitting electrode for an electric discharge tube
JPH0536619A (ja) 半導体表面処理方法及び装置
JPS5823432A (ja) アモルフアスシリコンの製造方法
JPS639743B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0536620A (ja) 半導体表面処理方法及び装置
JPS5849612A (ja) アモルフアスシリコンの製造方法
JPS5867021A (ja) アモルフアスシリコン半導体装置の製造方法
WO1983000950A1 (fr) Procede et dispositif de production d'une batterie solaire au silicium amorphe
JPS6157694B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0536621A (ja) 半導体表面処理方法及び装置