JPS56104477A - Amorphous semiconductor equivalent to crystalline semiconductor and method of manufacturing same - Google Patents

Amorphous semiconductor equivalent to crystalline semiconductor and method of manufacturing same

Info

Publication number
JPS56104477A
JPS56104477A JP344680A JP344680A JPS56104477A JP S56104477 A JPS56104477 A JP S56104477A JP 344680 A JP344680 A JP 344680A JP 344680 A JP344680 A JP 344680A JP S56104477 A JPS56104477 A JP S56104477A
Authority
JP
Japan
Prior art keywords
semiconductor
manufacturing same
equivalent
amorphous semiconductor
crystalline semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP344680A
Other languages
Japanese (ja)
Inventor
Aaru Obushinsukii Sutanfuoodo
Izu Masatsugu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Priority to JP344680A priority Critical patent/JPS56104477A/en
Publication of JPS56104477A publication Critical patent/JPS56104477A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
JP344680A 1980-01-16 1980-01-16 Amorphous semiconductor equivalent to crystalline semiconductor and method of manufacturing same Pending JPS56104477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP344680A JPS56104477A (en) 1980-01-16 1980-01-16 Amorphous semiconductor equivalent to crystalline semiconductor and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP344680A JPS56104477A (en) 1980-01-16 1980-01-16 Amorphous semiconductor equivalent to crystalline semiconductor and method of manufacturing same

Publications (1)

Publication Number Publication Date
JPS56104477A true JPS56104477A (en) 1981-08-20

Family

ID=11557560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP344680A Pending JPS56104477A (en) 1980-01-16 1980-01-16 Amorphous semiconductor equivalent to crystalline semiconductor and method of manufacturing same

Country Status (1)

Country Link
JP (1) JPS56104477A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832411A (en) * 1981-08-21 1983-02-25 Konishiroku Photo Ind Co Ltd Manufacture of amorphous silicon
WO1983000950A1 (en) * 1981-09-11 1983-03-17 Sato, Shigeru Method and device for producing amorphous silicon solar battery
WO1983001151A1 (en) * 1981-09-26 1983-03-31 Sato, Shigeru Semi-conductor material and process for its production
JPS59188913A (en) * 1983-04-11 1984-10-26 Semiconductor Energy Lab Co Ltd Photo cvd device
JPS60128456A (en) * 1983-12-16 1985-07-09 Hitachi Ltd Photosensitive body for electrophotography
JPS6140025A (en) * 1984-07-31 1986-02-26 Kanegafuchi Chem Ind Co Ltd Manufacture of silicon thin film
JPS6169177A (en) * 1983-07-18 1986-04-09 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Improved narrow band gap amorphous alloy for photovoltaic power relation
JPS61160754A (en) * 1985-01-09 1986-07-21 Hitachi Ltd Electrophotographic sensitive body

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832411A (en) * 1981-08-21 1983-02-25 Konishiroku Photo Ind Co Ltd Manufacture of amorphous silicon
WO1983000950A1 (en) * 1981-09-11 1983-03-17 Sato, Shigeru Method and device for producing amorphous silicon solar battery
WO1983001151A1 (en) * 1981-09-26 1983-03-31 Sato, Shigeru Semi-conductor material and process for its production
JPS59188913A (en) * 1983-04-11 1984-10-26 Semiconductor Energy Lab Co Ltd Photo cvd device
JPS6169177A (en) * 1983-07-18 1986-04-09 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Improved narrow band gap amorphous alloy for photovoltaic power relation
JPS60128456A (en) * 1983-12-16 1985-07-09 Hitachi Ltd Photosensitive body for electrophotography
JPS6140025A (en) * 1984-07-31 1986-02-26 Kanegafuchi Chem Ind Co Ltd Manufacture of silicon thin film
JPS61160754A (en) * 1985-01-09 1986-07-21 Hitachi Ltd Electrophotographic sensitive body

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