JPH0239087B2 - - Google Patents

Info

Publication number
JPH0239087B2
JPH0239087B2 JP56151423A JP15142381A JPH0239087B2 JP H0239087 B2 JPH0239087 B2 JP H0239087B2 JP 56151423 A JP56151423 A JP 56151423A JP 15142381 A JP15142381 A JP 15142381A JP H0239087 B2 JPH0239087 B2 JP H0239087B2
Authority
JP
Japan
Prior art keywords
silicon
type
aluminum
layer
evaporation source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56151423A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5855327A (ja
Inventor
Shigeru Sato
Masanari Shindo
Tatsuo Oota
Tetsuo Shima
Isao Myokan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP56151423A priority Critical patent/JPS5855327A/ja
Priority to DE823249030T priority patent/DE3249030T1/de
Priority to PCT/JP1982/000386 priority patent/WO1983001151A1/ja
Publication of JPS5855327A publication Critical patent/JPS5855327A/ja
Publication of JPH0239087B2 publication Critical patent/JPH0239087B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Silicon Compounds (AREA)
JP56151423A 1981-09-26 1981-09-26 半導体材料及びその製造方法 Granted JPS5855327A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56151423A JPS5855327A (ja) 1981-09-26 1981-09-26 半導体材料及びその製造方法
DE823249030T DE3249030T1 (de) 1981-09-26 1982-09-25 Halbleitermaterial und verfahren zu dessen herstellung
PCT/JP1982/000386 WO1983001151A1 (fr) 1981-09-26 1982-09-25 Materiau semiconducteur et son procede de production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56151423A JPS5855327A (ja) 1981-09-26 1981-09-26 半導体材料及びその製造方法

Publications (2)

Publication Number Publication Date
JPS5855327A JPS5855327A (ja) 1983-04-01
JPH0239087B2 true JPH0239087B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-09-04

Family

ID=15518290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56151423A Granted JPS5855327A (ja) 1981-09-26 1981-09-26 半導体材料及びその製造方法

Country Status (2)

Country Link
JP (1) JPS5855327A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO1983001151A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021380A (ja) * 1983-07-18 1985-02-02 Nippon Telegr & Teleph Corp <Ntt> 非晶質シリコン薄膜の作製方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837247B2 (ja) * 1979-11-27 1983-08-15 コニカ株式会社 アモルフアスシリコンの製造方法
JPS56104477A (en) * 1980-01-16 1981-08-20 Energy Conversion Devices Inc Amorphous semiconductor equivalent to crystalline semiconductor and method of manufacturing same
JPS56122123A (en) * 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor

Also Published As

Publication number Publication date
WO1983001151A1 (fr) 1983-03-31
JPS5855327A (ja) 1983-04-01

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