WO1980000897A1 - Methode de fabrication de dispositifs d'affichage utilisant des diodes a emission lumineuse - Google Patents

Methode de fabrication de dispositifs d'affichage utilisant des diodes a emission lumineuse Download PDF

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Publication number
WO1980000897A1
WO1980000897A1 PCT/JP1979/000175 JP7900175W WO8000897A1 WO 1980000897 A1 WO1980000897 A1 WO 1980000897A1 JP 7900175 W JP7900175 W JP 7900175W WO 8000897 A1 WO8000897 A1 WO 8000897A1
Authority
WO
WIPO (PCT)
Prior art keywords
main surface
emitting diode
light emitting
wafer
electrode
Prior art date
Application number
PCT/JP1979/000175
Other languages
English (en)
Japanese (ja)
Inventor
Y Hosomi
M Nojima
Original Assignee
Sanyo Electric Co
Y Hosomi
M Nojima
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co, Y Hosomi, M Nojima filed Critical Sanyo Electric Co
Publication of WO1980000897A1 publication Critical patent/WO1980000897A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Definitions

  • the present invention relates to a method for manufacturing a solid-state display device, particularly a display device in which light-emitting diodes are arranged in a matrix.
  • a plurality of light emitting diode door arrays (93) in which a plurality of light emitting diode elements are arranged in a line are arranged in a plurality of lines. Attempts have been made to simplify the configuration of the display device by configuring the display device.
  • light-emitting diode elements are formed vertically and horizontally on a single wafer, making it easier to handle, but on the other hand, it is denser on the semiconductor wafer. Diffusion forming a large number of PN junctions (95) with a large gap requires a lot of work. Further, in order to cause a predetermined one of the light-emitting diode elements constituting the light-emitting diode array (93) to emit light, the front and back electrodes (97) arranged in the row and column directions are selected. However, since the elements are not separated from each other, the light emission (9) occurring at the PN junction expands, and the light oozes out to the adjacent element. No good contrast can be obtained. Therefore, many problems remain, such as the necessity of preparing a mask (92) having a window (99) separately and applying electricity to the front surface side. Disclosure of the invention
  • the present invention provides a light emitting diode with a uniform PN junction.
  • OMPI Vertical and horizontal grooves reaching the PN junction are provided in advance on the entire back principal surface side of the anode to partition the PN junction for each element, and the front principal surface is covered with the front electrode except for the portion corresponding to each PN junction. , towards the groove in advance. provided on the back main surface from 3 ⁇ 4 table main surface after bonding the back main surface on insulation substrate put off interrupt., insulate the light emitting die O one de c d Nono It is characterized in that it is separated into stripes on a substrate.
  • the light emitting diode element can handle one wafer as one unit as a unit, which greatly simplifies the work of forming the light emitting diode elements in an array and reduces the cost. It is possible to obtain a display device with excellent contrast.
  • FIG. 1 to Fig. 5 are bevel views showing the implementation status of the present invention
  • Fig. 6 is a cross-sectional view along the line VI-I of Fig. 6,
  • Fig. 7 is a cross-section showing another embodiment of the groove forming process.
  • FIG. 8, FIG. 8 is a perspective view showing another embodiment of the display device
  • FIG. 9 and FIG. 11 are partially cutaway plan views showing a conventional display device
  • FIG. 12 is a cross-sectional view along the XH— ⁇ line in FIG. BEST MODE FOR CARRYING OUT THE INVENTION
  • FIG. 2 shows a preliminary processing step of the light emitting diode wafer (2).
  • the light-emitting diode wafer (2) is, for example, an n-type compound semiconductor with a thickness of 250 to 300 / cm2.
  • a back electrode (3) corresponding to the electrodes (11) and (12) formed on the insulating substrate (1) is provided on the back main surface (25) of the light emitting diode wafer (2). For example, they are formed in a matrix at intervals of 400.
  • the back electrode (3) has an omic contact with the back main surface (25) and has vertical and horizontal grooves (3) between the electrodes (3) and (3) as shown in Fig. 3. 4a) and (4b) are provided to separate the back electrodes (3) and (3) from each other.
  • Each groove (4) is formed by a dicing method or an etching method, and is dug from the back main surface (25) side to a position slightly beyond the PN junction (23).
  • the open front electrode (5) shown in Fig. 4 is formed on the front main surface (24) of the light emitting diode wafer (2).
  • the front electrode (5) has a stripe shape extending in the row direction at the same pitch as each row of the back electrode (3), and is located above the electrode forming position in the row direction of the back electrode (3).
  • a window (6) of about 250 ⁇ 250 with the electrode metal removed is opened to create an n-type region (22).
  • the light emitting diode wafer (2) which has been subjected to pre-processing with the front and back electrodes (3) and (5), is an insulating substrate as shown in FIG.
  • the back electrodes (3) belonging to the same column are aligned and fixed with a conductive adhesive.
  • the back electrodes (3) belonging to the same column are aligned and fixed with a conductive adhesive.
  • solder As a conductive adhesive to the 10 poles (3), it is heated by contacting the column electrodes (J) on the board (1), and the light emitting diode wafer is heated.
  • the second is mechanically and electrically firmly bonded onto the substrate (1). Further, if necessary, the periphery of the die pad and the substrate (1) may be fixed with a suitable insulating adhesive.
  • FIG. 8 shows another embodiment of the present invention, as described above. After forming the unit display device (16) on the insulating substrate (1) and further arranging a plurality of sets of the unit display device (16) on the main substrate (la), an even larger size is obtained. Of the display device.
  • the number of light emitting diode arrays (8) provided in each unit display device (16) is equalized, and the light emitting diode arrays (8) arranged on the same line are arranged.
  • the front electrodes (5) and (5) of (8) are connected in series with each other by a lead wire (13), and the number of rows and columns of the back electrodes is located on the periphery of the main substrate (1a).
  • the number of connection electrodes (17) and (15) corresponding to the number of electrodes is formed, and the end of each column electrode (11) on the insulating substrate (1) and the front electrode (5) of the emitting diode array (8) are I'm connected.
  • the groove (4) provided on the back main surface (25) side should be cut about 50 by a dicing method, and then about 160 ° C using the back electrode (3) as a mask. Etching with this phosphoric acid solution spreads the shape of an arc with a depth of about 100, as shown in Fig. 7, and cuts off when the light emitting diode end layer (8) is separated. (7) alignment is easy
  • the front and back electrodes (5) and (3) are formed separately from the beginning as described above, but are also formed over the entire surface, and at the same time as the formation of the groove (4) or the notch (7). Minutes ... it can be separated.
  • the number of light emitting diode elements formed on one semiconductor wafer and the pitch can be appropriately increased or decreased, and the P region and the n region can be configured in reverse. .
  • OMPI 5 In the case of selectively emitting light at the window (6a) at the second row and third column in the figure, the third row electrode (11a) from the left on the substrate (1) and the second column electrode ( 12a) by applying a forward voltage selectively between them, as shown in Fig. 6.
  • the P-junction (23mm) emits green light and the opposite window (6a ) Emits light (9).
  • the bandgap of gallium phosphide is about 2.26 eV, while the green light is about 2 eV (wavelength 5650 eV).
  • the display device formed according to the present invention is used for a time display plate or various display devices.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)

Abstract

Une methode de fabrication d'un dispositif d'affichage utilisant des diodes a emission lumineuse disposees sous forme d'une matrice consiste a: former une electrode sur la surface arriere principale d'une tranche de diodes a emission lumineuse (2) ayant une jonction P-N uniforme; a fendre le dos ou partie arriere de la surface principale en longueur et en largeur pour former des canaux (4a) et (4b) s'etendant jusqu'a la jonction P-N de maniere telle que la region de la jonction P-N soit divisee en petites sections; a former une electrode arriere sur chacune de ces sections; a former sur la partie avant de la surface principale de la tranche (2), une electrode avant (5) ayant des ouvertures (6) dans la portion correspondant aux sections de la jonction (P-N); a monter la tranche (2) de diodes a emission lumineuse en couches sur un substrat isole (1) pourvu d'electrodes connectees en parallele (11) disposees en forme de bandes; et a fendre la tranche du cote avant de la surface principale vers les canaux du cote arriere (4b) dans le sens perpendiculaire aux electrodes connectees en parallele (11) pour separer la tranche de diodes a emission lumineuse en une configuration en bandes (8).
PCT/JP1979/000175 1978-10-24 1979-07-02 Methode de fabrication de dispositifs d'affichage utilisant des diodes a emission lumineuse WO1980000897A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13135978A JPS5558584A (en) 1978-10-24 1978-10-24 Manufacture of solid display device
JP78/131359 1978-10-24

Publications (1)

Publication Number Publication Date
WO1980000897A1 true WO1980000897A1 (fr) 1980-05-01

Family

ID=15056074

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1979/000175 WO1980000897A1 (fr) 1978-10-24 1979-07-02 Methode de fabrication de dispositifs d'affichage utilisant des diodes a emission lumineuse

Country Status (2)

Country Link
JP (1) JPS5558584A (fr)
WO (1) WO1980000897A1 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5047364A (en) * 1988-06-27 1991-09-10 Mitsubishi Denki Kabushiki Kaisha Method for making a multi-point emission type semiconductor laser device
US5102824A (en) * 1990-11-05 1992-04-07 California Institute Of Technology Method of manufacturing a distributed light emitting diode flat-screen display for use in televisions
NL1029688C2 (nl) * 2005-08-05 2007-02-06 Lemnis Lighting Ip Gmbh Werkwijze voor het vervaardigen van een elektrische schakeling voorzien van een veelvoud van LED's.
RU2465683C1 (ru) * 2011-08-09 2012-10-27 Вячеслав Николаевич Козубов Способ формирования светоизлучающих матриц
RU2474920C1 (ru) * 2011-11-14 2013-02-10 Вячеслав Николаевич Козубов Способ формирования светоизлучающих матриц
RU2492550C1 (ru) * 2012-05-22 2013-09-10 Вячеслав Николаевич Козубов Способ формирования светоизлучающих матриц
WO2017046000A1 (fr) * 2015-09-18 2017-03-23 Osram Opto Semiconductors Gmbh Composant électroluminescent et procédé de fabrication d'un composant électroluminescent
EP3451393A4 (fr) * 2016-04-29 2019-10-30 Boe Technology Group Co. Ltd. Élément électroluminescent et son procédé de fabrication
WO2022167285A1 (fr) * 2021-02-02 2022-08-11 Ams-Osram International Gmbh Procédé de production d'un agencement de puces semi-conductrices et agencement de puces semi-conductrices

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015111574A1 (de) 2015-07-16 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronische Anordnung sowie Verfahren zur Herstellung einer optoelektronischen Anordnung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4870493A (fr) * 1971-12-20 1973-09-25
JPS5068497A (fr) * 1973-10-18 1975-06-07
JPS50120284A (fr) * 1974-03-05 1975-09-20
JPS52128087A (en) * 1976-04-20 1977-10-27 Matsushita Electric Ind Co Ltd Semiconductor display unit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4870493A (fr) * 1971-12-20 1973-09-25
JPS5068497A (fr) * 1973-10-18 1975-06-07
JPS50120284A (fr) * 1974-03-05 1975-09-20
JPS52128087A (en) * 1976-04-20 1977-10-27 Matsushita Electric Ind Co Ltd Semiconductor display unit

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Journal of the Electrochemical Society Vol. 123, No. 4, (1976-4), T. Uragaki et al (Selective Etching of GaP Crystals with Hot Phosphoric Acid), P. 580-582 *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5047364A (en) * 1988-06-27 1991-09-10 Mitsubishi Denki Kabushiki Kaisha Method for making a multi-point emission type semiconductor laser device
US5102824A (en) * 1990-11-05 1992-04-07 California Institute Of Technology Method of manufacturing a distributed light emitting diode flat-screen display for use in televisions
NL1029688C2 (nl) * 2005-08-05 2007-02-06 Lemnis Lighting Ip Gmbh Werkwijze voor het vervaardigen van een elektrische schakeling voorzien van een veelvoud van LED's.
WO2007052241A2 (fr) * 2005-08-05 2007-05-10 Lemnis Lighting Ip Gmbh Procede pour preparer un element electrique comprenant plusieurs diodes lumineuses
WO2007052241A3 (fr) * 2005-08-05 2007-08-16 Lemnis Lighting Ip Gmbh Procede pour preparer un element electrique comprenant plusieurs diodes lumineuses
RU2465683C1 (ru) * 2011-08-09 2012-10-27 Вячеслав Николаевич Козубов Способ формирования светоизлучающих матриц
RU2474920C1 (ru) * 2011-11-14 2013-02-10 Вячеслав Николаевич Козубов Способ формирования светоизлучающих матриц
RU2492550C1 (ru) * 2012-05-22 2013-09-10 Вячеслав Николаевич Козубов Способ формирования светоизлучающих матриц
WO2017046000A1 (fr) * 2015-09-18 2017-03-23 Osram Opto Semiconductors Gmbh Composant électroluminescent et procédé de fabrication d'un composant électroluminescent
US10504879B2 (en) 2015-09-18 2019-12-10 Osram Opto Semiconductors Gmbh Light-emitting component and method for producing a light-emitting component
EP3451393A4 (fr) * 2016-04-29 2019-10-30 Boe Technology Group Co. Ltd. Élément électroluminescent et son procédé de fabrication
WO2022167285A1 (fr) * 2021-02-02 2022-08-11 Ams-Osram International Gmbh Procédé de production d'un agencement de puces semi-conductrices et agencement de puces semi-conductrices

Also Published As

Publication number Publication date
JPS5558584A (en) 1980-05-01

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