US9722006B2 - Organic light-emitting device and method for producing same - Google Patents

Organic light-emitting device and method for producing same Download PDF

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US9722006B2
US9722006B2 US14/377,950 US201214377950A US9722006B2 US 9722006 B2 US9722006 B2 US 9722006B2 US 201214377950 A US201214377950 A US 201214377950A US 9722006 B2 US9722006 B2 US 9722006B2
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partition wall
underlayer
organic
film
protruding portion
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US20150028315A1 (en
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Masaki Nishimura
Hideaki Matsushima
Yumeji Takashige
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Magnolia Blue Corp
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Joled Inc
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    • H01L27/326—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H01L27/3246—
    • H01L27/3248—
    • H01L27/3258—
    • H01L51/0008—
    • H01L51/5209—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering

Definitions

  • the present invention is related to organic light-emitting devices and methods for manufacturing organic light-emitting devices.
  • Organic EL devices are light-emitting devices that use the EL phenomenon of solid fluorescent/phosphorescent material.
  • an organic EL panel is described below using FIG. 21 .
  • a thin film transistor (TFT) 902 is disposed on an upper surface in a Z-axis direction of a substrate 901 (in FIG. 21 , only the drain of the TFT is shown).
  • the TFT 902 and the substrate 901 are covered by a passivation film 903 and, above the passivation film 903 , an interlayer insulating film 904 . Note that the portion of the passivation film 903 and the interlayer insulating film 904 above the drain of the TFT 902 is open (contact hole CH).
  • an anode 905 is disposed above the interlayer insulating film 904 for each sub-pixel.
  • the anode 905 is joined to the drain of the TFT 902 at the bottom of the contact hole CH.
  • a partition wall (bank) 907 which partitions sub-pixels, protrudes above the contact hole CH. At least a surface of the partition wall 907 has liquid repellency.
  • a hole injection layer 906 In each recess formed by the partition wall 907 surrounding an area, a hole injection layer 906 , a hole transport layer 908 , and a light-emitting layer 909 are disposed in the order stated. In successive unbroken layers above the light-emitting layer 909 and the partition wall 907 , an electron injection layer 910 , a cathode 911 , and a sealant layer 912 are disposed in the order stated.
  • a color filter (CF) substrate 916 composed of a substrate 913 , a color filter 914 , and a black matrix 915 is joined to the sealant layer 912 by an adhesive resin layer 917 .
  • organic films such as the hole injection layer 906
  • ink that contains organic material is applied into a recess formed by the partition wall 907 surrounding an area, then dried.
  • organic films may be formed within the recess through a vapor-deposition method.
  • the present invention resolves problems such as described above, and provides an organic light-emitting device that has excellent light-emitting performance and a high film thickness precision with respect to an organic film formed in a recess formed by a partition wall surrounding an area, and a method for manufacturing the organic light-emitting device.
  • the organic light-emitting device pertaining to one aspect of the present invention has the following structure.
  • the organic light-emitting device pertaining to one aspect of the present invention includes at least an underlayer, a partition wall, and an organic film.
  • the underlayer is disposed above a substrate.
  • the partition wall covers a first part of a surface of the underlayer, and surrounds a second part of the surface of the underlayer.
  • the organic film includes organic material, is disposed in a recess formed by the partition wall surrounding the second part, and is in contact with the surface of the underlayer and a surface of the partition wall.
  • the surface of the underlayer has a protruding portion that protrudes in an upward direction.
  • the protruding portion is composed of a top surface and an inclined surface that surrounds the top surface.
  • a feature of the present invention is that the first part includes at least the top surface and a portion of the inclined surface, and an inner edge of the partition wall is in contact with the inclined surface or a level portion of the surface of the underlayer that is not the protruding portion.
  • the protruding portion of the surface of the underlayer protrudes in the upward direction
  • the partition wall covers the entirety of the top surface and at least a portion of the inclined surface of the protruding portion. Further, the inner edge of the partition wall is in contact with the inclined surface of the protruding portion or the level portion that is not the protruding portion.
  • the top surface that is the highest part of the protruding portion and at least a portion of the inclined surface that surrounds the top surface are covered by the partition wall.
  • the organic thin has high film thickness uniformity, without localized points of thin film thickness and gaps in film coverage occurring.
  • the organic film having a high film thickness precision is disposed in the recess formed by the partition wall surrounding an area, and the organic light-emitting device has excellent light-emitting performance.
  • FIG. 1 is a schematic block diagram illustrating a structure of an organic EL display device pertaining to embodiment 1 of the present invention.
  • FIG. 2 is a schematic plan view illustrating pixels 11 in an organic EL panel 10 .
  • FIG. 3 is a schematic cross-sectional view illustrating a portion of the organic EL panel 10 .
  • FIG. 4 is a schematic cross-sectional view illustrating positional relationships of a partition wall 107 and a hole transport layer 108 in the organic EL panel 10 .
  • FIG. 5A to FIG. 5D are schematic cross-sectional views illustrating cross-section structures in part of a process of manufacturing the organic EL panel 10 .
  • FIG. 6A to FIG. 6C are schematic cross-sectional views illustrating cross-section structures in part of the process of manufacturing the organic EL panel 10 .
  • FIG. 7A to FIG. 7C are schematic cross-sectional views illustrating cross-section structures in part of the process of manufacturing the organic EL panel 10 .
  • FIG. 8A to FIG. 8C are schematic cross-sectional views illustrating cross-section structures in part of the process of manufacturing the organic EL panel 10 .
  • FIG. 9 is a schematic cross-sectional view illustrating a relationship between height of an inner edge of the partition wall 107 and film thickness of the hole transport layer 108 in the organic EL panel 10 .
  • FIG. 10A and FIG. 10B are schematic cross-sectional views illustrating a relationship between height of an inner edge of a partition wall and film thickness of a hole transport layer in an organic EL panel pertaining to a comparative example.
  • FIG. 11 is a schematic diagram illustrating an underlayer surface profile and a surface profile of a hole transport layer in an implementation example and a comparative example.
  • FIG. 12 is a schematic diagram illustrating a portion of the surface profile of the hole transport layer in the implementation example.
  • FIG. 13 is a table illustrating states of ink for each ink drop quantity.
  • FIG. 14A and FIG. 14B are schematic cross-sectional views illustrating estimated surface profiles of ink directly after ink dropping pertaining to the comparative example
  • FIG. 14C is a schematic cross-sectional view illustrating an estimated surface profile of ink directly after ink dropping pertaining to the implementation example.
  • FIG. 15A to FIG. 15C each correspond to a respective one of FIG. 14A to FIG. 14C , and are schematic cross-sectional views illustrating an estimated surface profile of a hole transport layer after ink drying.
  • FIG. 16 is a schematic cross-sectional diagram illustrating a structure of a portion of an organic EL panel 30 pertaining to embodiment 2 of the present invention.
  • FIG. 17 is a schematic cross-sectional view illustrating a relationship between height of an inner edge of a partition wall 307 and film thickness of a hole injection layer 306 in the organic EL panel 30 .
  • FIG. 18 is a schematic cross-sectional diagram illustrating a structure of a portion of an organic EL panel 40 pertaining to embodiment 3 of the present invention.
  • FIG. 19 is a schematic cross-sectional view illustrating a position of an inner edge of a partition wall 407 in the organic EL panel 40 .
  • FIG. 20 is a schematic cross-sectional diagram illustrating a structure of a portion of an organic EL panel pertaining to embodiment 4 of the present invention.
  • FIG. 21 is a schematic cross-sectional diagram illustrating a structure of a portion of an organic EL panel pertaining to conventional technology.
  • FIG. 22A is a schematic cross-sectional view illustrating a relationship between a contact hole 924 a and a surface shape of an interlayer insulating film 924
  • FIG. 22B is a schematic cross-sectional view illustrating a relationship between a protruding portion of the interlayer insulating film 924 and a form of a hole injection layer 926 .
  • FIG. 22 Background of the present invention is described below, using FIG. 22 .
  • a protruding portion having an upward convex shape remains (the portion indicated by arrow E 1 ) in a Z-axis direction surface of the interlayer insulating film 924 .
  • the detailed mechanism by which the protruding portion occurs is unclear, but it is thought that exposure and the like for forming the hole 924 a in the interlayer insulating film 924 is a cause.
  • an anode 925 is disposed so as to cover the surface of the interlayer insulating film 924 .
  • the anode 925 is also formed on surfaces defining the hole 924 a in the interlayer insulating film 924 , and in this way the anode 925 and a drain of the TFT 902 are put in contact via the contact hole CH.
  • a partition wall 927 is formed so as to cover the contact hole CH, for example, ink that contains organic material is applied by an application method to a surface of the anode 925 , which is the surface of an underlayer, and a hole injection layer 926 is formed by the ink being dried.
  • E 2 the portion indicated by the arrow E 2 in FIG.
  • a portion of the anode 925 at an inclined surface of the protruding portion may be exposed and not covered by the hole injection layer 926 .
  • the hole injection layer 926 even if a light-emitting layer is disposed above the hole injection layer 926 , the light-emitting layer will not emit light normally, and a reduction in light-emitting performance will result.
  • An organic light-emitting device pertaining to one aspect of the present invention includes at least an underlayer, a partition wall, and an organic film.
  • the underlayer is disposed above a substrate.
  • the partition wall covers a first part of a surface of the underlayer and surrounds a second part of the surface of the underlayer.
  • the organic film includes organic material, is disposed in a recess formed by the partition wall surrounding the second part, and is in contact with the surface of the underlayer and a surface of the partition wall.
  • the surface of the underlayer has a protruding portion that protrudes in an upward direction.
  • the protruding portion is composed of a top surface and an inclined surface that surrounds the top surface.
  • a feature of the present invention is that the first part includes least the top surface and a portion of the inclined surface, and that an inner edge of the partition wall is in contact with the inclined surface or a level portion of the surface of the underlayer that is not the protruding portion.
  • the organic light-emitting device due to the organic light-emitting device having the above-described structure, localized areas of thin film thickness and uncovered areas in which a film is not formed do not occur, and an organic film having a high film thickness uniformity is achieved.
  • the organic film having a high film thickness precision is disposed in the recess formed by the partition wall surrounding an area, and the organic light-emitting device having excellent light-emitting performance is achieved.
  • the organic film may be formed by drying an applied film that is formed by applying ink that contains an organic material. If a2 is an average film thickness in nanometers of the organic film above the level portion and b is a difference in height in nanometers of a position where the inner edge of the partition wall contacts the surface of the underlayer and the level portion, the following relationship may be satisfied: ( b/a 2) ⁇ 15 [Math 1]
  • the organic light-emitting device pertaining to one aspect of the present invention has excellent light-emitting performance.
  • the organic film may be formed by drying an applied film that is formed by applying ink that contains an organic material.
  • the applied film may cover the entirety of the level portion, a portion of the inclined part of the protruding portion not covered by the partition wall, and a portion of the partition wall.
  • the applied film may have a film thickness of a1 nanometers that is greater than b nanometers. Where an average film thickness of the organic film above the level portion is a2 nanometers and a difference in height of a position where the inner edge of the partition wall contacts the surface of the underlayer and the level portion is b nanometers, Math 1 is satisfied.
  • the organic light-emitting device pertaining to one aspect of the present invention has an excellent light-emitting performance.
  • a difference in height of a position where the inner edge of the partition contacts the surface of the underlayer and the level portion may be equal to or less than 150 nanometers.
  • the underlayer may include an interlayer insulating film that has a contact hole and an electrode that is disposed on a surface of the interlayer insulating film and surfaces defining the contact hole.
  • the organic film may be formed by drying an applied film that is formed by applying, on a surface of the electrode, ink that contains the organic material.
  • the surface of the interlayer insulating film may have a protruding portion in a periphery of the contact hole that protrudes in an upward direction.
  • the electrode may be disposed so as to follow the surface of the interlayer insulating film, such that a portion of the surface of the electrode above the protruding portion of the interlayer insulating film protrudes in an upward direction.
  • the surface of the electrode may be the surface of the underlayer.
  • a manufacturing method for the organic light-emitting device pertaining to one aspect of the present invention includes: (i) a process of forming an underlayer, (ii) a process of forming a partition wall, (iii) a process of forming an applied film, and (iv) a process of forming an organic film.
  • the surface of the underlayer has a protruding portion that protrudes in an upwards direction, the protruding portion forming a top surface and an inclined surface that surrounds the top surface, and (ii) in forming the partition wall, the first part includes at least the top surface and a portion of the inclined surface, and an inner edge of the partition wall is in contact with the inclined surface or a level portion of the surface of the underlayer that is not the protruding portion.
  • the organic film having a high film thickness precision is disposed in the recess formed by the partition wall surrounding the second part, and manufacturing of the organic light-emitting device having excellent light-emitting performance is achieved.
  • a manufacturing method for the organic light-emitting device pertaining to one aspect of the present invention includes: (i) a process of forming an underlayer, (ii) a process of forming a partition wall, (iii) a process of forming an applied film, and (iv) a process of forming an organic film.
  • the surface of the underlayer has a protruding portion that protrudes in an upwards direction, the protruding portion forming a top surface and an inclined surface that surrounds the top surface, and (ii) in forming the partition wall, the first part includes at least the top surface and a portion of the inclined surface, and an inner edge of the partition wall is in contact with the inclined surface or a level portion of the surface of the underlayer that is not the protruding portion.
  • the applied film when forming the applied film, is applied to cover the entirety of the level portion, a portion of the inclined part of the protruding portion not covered by the partition wall, and a portion of the partition wall, and is applied to have a film thickness of a1 nanometers that is greater than b nanometers.
  • the height b of the partition wall, the film thickness a1 of the applied film, and the average film thickness a2 of the organic film so as to satisfy the above described relationship of Math 2, occurrence of an area in which the organic film is not formed on the inclined surface of the protruding portion is effectively prevented, while maintaining a high aperture ratio of the recess surrounded by the partition wall. Accordingly, in the manufacturing method of the organic light-emitting device pertaining to one aspect of the present invention, manufacturing of an organic light-emitting device having excellent light-emitting performance is achieved.
  • the structure of the organic EL display device 1 pertaining to embodiment 1 of the present invention is described using FIG. 1 .
  • the organic EL display device 1 has an organic EL panel 10 as one example of an organic light-emitting device, and, connected to the organic EL panel 10 , a drive/control unit 20 .
  • the organic EL panel 10 is a panel using the EL phenomenon of organic material, and a plurality of organic EL elements are, for example, arranged in a matrix.
  • the drive/control unit 20 is composed of four drive circuits 21 - 24 and a control circuit 25 .
  • the arrangement of the drive/control unit 20 with respect to the organic EL panel 10 is not limited in this way.
  • FIG. 2 is a schematic plan view illustrating pixels 11 in the organic EL panel 10 .
  • FIG. 3 is a schematic cross-sectional view illustrating an A-A′ cross-section of FIG. 2 .
  • each of the pixels 11 is composed of a combination of a sub-pixel 11 a from which red (R) light is emitted, a sub-pixel 11 b from which green (G) light is emitted, and a sub-pixel 11 c from which blue (B) light is emitted.
  • the pixels 11 are arranged in a matrix and a bus bar 12 that connects with a cathode is disposed between the pixels 11 that are adjacent in the X-axis direction.
  • a contact hole CH is arranged between each of the sub-pixels 11 a , 11 b , 11 c that are adjacent in the Y-axis direction.
  • Each contact hole CH is a connection path between an anode and a corresponding drain of a TFT.
  • a thin film transistor (TFT) 102 is disposed on an upper surface in a Z-axis direction of a substrate 101 (in FIG. 3 , only the drain of the TFT 102 is shown).
  • the TFT 102 and the substrate 101 are covered by a passivation film 103 and, above the passivation film 103 , an interlayer insulating film 104 . Note that regarding the passivation film 103 and the interlayer insulating film 104 , as described above, portions above the drain of the TFT 102 are open (contact hole CH).
  • a region surrounding the contact hole CH in the interlayer insulating film 104 protrudes further in the Z-axis direction than other regions of the interlayer insulating film 104 .
  • the protruding portion of the interlayer insulating film 104 in the region that occurs due to the contact hole CH is composed of a top surface and an inclined surface that surrounds the top surface.
  • an anode 105 is disposed above the interlayer insulating film 104 for each sub-pixel 11 a , 11 b , 11 c (see FIG. 2 ).
  • the anode 105 is joined to the drain of the TFT 102 at the bottom of the contact hole CH.
  • a hole injection layer 106 is disposed so as to span a plurality of the sub-pixels 11 a , 11 b , 11 c.
  • the hole injection layer 106 may also be disposed one-for-one for each sub-pixel 11 a , 11 b , 11 c , so as not to span adjacent anodes 105 .
  • the anode 105 and the hole injection layer 106 are disposed following the surface of the interlayer insulating film 104 , and, above the protruding portion of the interlayer insulating film 104 , the surface of the hole injection layer 106 also protrudes following the protruding portion of the interlayer insulating film 104 .
  • the TFT 102 , the passivation film 103 , the interlayer insulating film 104 , the anode 105 , and the hole injection layer 106 , all above the substrate 101 are collectively called an underlying layer 100
  • a portion of the surface of the underlying layer 100 corresponding to the portion of the interlayer insulating film 104 surrounding the contact hole CH protrudes more than other portions of the surface of the underlying layer 100 .
  • the partition wall 107 which separates adjacent sub-pixels 11 a , 11 b , 11 c , protrudes above the hole injection layer 106 .
  • the partition wall 107 is disposed so as to cover the top surface of the protruding portion of the underlayer 100 surrounding the contact hole CH and a portion of the inclined surface that surrounds the top surface.
  • partition wall 107 is disposed so as to be present inside the contact hole CH, and at least the surface of the partition wall 107 has liquid repellency.
  • the hole transport layer 108 and the light-emitting layer 109 which are organic films, are disposed in the order stated.
  • the hole transport layer 108 and the light-emitting layer 109 may, for example, be formed by an application method such as inkjet printing.
  • an electron injection layer 110 , a cathode 111 , and a sealant layer 112 are disposed in the order stated.
  • a color filter (CF) substrate 116 composed of a substrate 113 , a color filter 114 , and a black matrix 115 is joined to the sealant layer 112 by an adhesive resin layer 117 .
  • the substrate 101 is formed using an insulating material as a base, such as alkali-free glass, soda glass, non-fluorescent glass, phosphate glass, borate glass, silica glass, acrylic resin, styrene resin, polycarbonate resin, epoxy resin, polyethylene, polyester, silicone resin, alumina, etc.
  • an insulating material such as alkali-free glass, soda glass, non-fluorescent glass, phosphate glass, borate glass, silica glass, acrylic resin, styrene resin, polycarbonate resin, epoxy resin, polyethylene, polyester, silicone resin, alumina, etc.
  • the interlayer insulating film 104 is formed using an organic compound such as polyimide, polyimide, acrylic resin, etc.
  • the anode 105 is formed using aluminium (Al), or silver (Ag), or an alloy containing aluminium (Al) and/or silver (Ag).
  • Al aluminium
  • Al silver
  • the hole injection layer 106 is a layer that includes an oxide of tungsten (W), molybdenum (Mo), or nickel (Ni).
  • the hole injection layer 106 includes a metal oxide as described above, the hole injection layer 106 has functions of injecting holes with respect to the light-emitting layer 109 while stably generating holes or assisting in hole generation, and has a large work function.
  • the hole injection layer 106 includes a metal oxide as described above, multiple valences can be obtained and therefore multiple energy levels can be obtained. As a result, hole injection becomes easy, and a drive voltage is reduced.
  • using tungsten oxide (WOx) is preferable from the viewpoint of having the functions of stably injecting holes and assisting hole generation.
  • the partition wall 107 is formed using an organic material such as a resin, and has insulation properties.
  • organic material such as a resin
  • examples of the organic material that may be used to form the partition wall 107 are acrylic resin, polyimide resin, Novalac-type phenolic resin, etc.
  • the partition wall 107 preferably has organic solvent resistance.
  • the partition wall 107 may be subjected to an etching process, a baking process, etc., and therefore the partition wall 107 is preferably formed from a material that has a high resistance to being excessively deformed or altered by such processes. Further, in order to have liquid repellency, material from which the partition wall 107 is formed may include a liquid repellent component, or the surface of the partition wall 107 may be fluorinated.
  • the partition wall 107 is formed using a lyophilic material
  • the lyophilic/liquid repellency difference between the surface of the partition wall 107 and the surface of the light-emitting layer 109 becomes small, and it becomes difficult to selectively retain ink containing the organic material that forms the light-emitting layer 109 within the recess formed by the partition wall 107 surrounding an area.
  • the structure of the partition wall 107 is not limited to a single-layer structure as illustrated in FIG. 3 , and a multi-layer structure of two or more layers may be used. In such a case, the above-described materials may be combined in each layer, and inorganic material or organic material may be used in each layer.
  • the hole transport layer 108 is formed using a polymer compound having no hydrophilic group.
  • a polymer compound having no hydrophilic group may be used such as polyfluorene and derivatives thereof, or polyarylamine and derivatives thereof, etc.
  • the light-emitting layer 109 has a function of emitting light when an excited state is generated by the injection and recombination of holes and electrons.
  • Material used to form the light-emitting layer 109 is an organic material having a light-emitting property that can be made into a film using a wet printing method.
  • the light-emitting layer 109 is preferably formed using fluorescent material such as an oxinoid compound, perylene compound, coumarin compound, azacoumarin compound, oxazole compound, oxadiazole compound, perinone compound, pyrrolo-pyrrole compound, naphthalene compound, anthracene compound, fluorene compound, fluoranthene compound, tetracene compound, pyrene compound, coronene compound, quinolone compound and azaquinolone compound, pyrazoline derivative and pyrazolone derivative, rhodamine compound, chrysene compound, phenanthrene compound, cyclopentadiene compound, stilbene compound, diphenylquinone compound, styryl compound, butadiene compound, dicyanomethylene pyran compound, dicyanomethylene thiopyran compound, fluorescein compound, pyrylium compound, thiapyrylium compound, selen
  • the electron injection layer 110 has a function of injecting and transporting electrons injected thereto from the cathode 111 to the light-emitting layer 109 , and is formed using such material as an oxidiazole derivative (OXD), a triazole derivative (TAZ), a phenanthroline derivative (BCP, Bphen), etc.
  • OXD oxidiazole derivative
  • TEZ triazole derivative
  • BCP phenanthroline derivative
  • a dry process such as a vapor-deposition method, using an alkali metal such as barium (Ba), may be used to form the electron injection layer 110 .
  • an alkali metal such as barium (Ba)
  • the cathode 111 is formed using, for example, indium tin oxide (ITO), or indium zinc oxide (IZO).
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • the cathode 111 is preferably formed from a material that is light transmissive. A light transmittance of 80% or greater is preferable.
  • the sealant layer 112 has a function of suppressing exposure to moisture and air of an organic film, such as the light-emitting layer 109 , and is formed using a material such as silicon nitride (SiN), silicon oxynitride (SiON), etc. Further, above a layer formed using a material such as silicon nitride (SiN), silicon oxynitride (SiON), etc., a sealing resin layer including a resin material such as acrylic resin, silicone resin, etc., may be provided.
  • the sealant layer 112 is preferably formed using a material that is light transmissive.
  • the surface of the hole injection layer 106 which is the surface of the underlayer 100 , has a protruding portion that corresponds to the protruding portion of the interlayer insulating film 104 surrounding the contact hole CH (see FIG. 3 and other drawings).
  • an inner edge P 1 of the partition wall 107 is positioned along an inclined surface 100 a of the protruding portion of the underlayer 100 . That is, in the organic EL panel 10 , the inner edge P 1 of the partition wall 107 is defined as being between boundaries P 11 and P 12 of the inclined surface 100 a of the surface of the underlayer 100 .
  • the hole transport layer 108 is formed so as to be in contact with the surface of the hole injection layer 106 that is not covered by the partition wall 107 and a portion of an inclined surface 107 a of the partition wall 107 .
  • a surface 108 a of the hole transport layer 108 has a contact point P 2 at a point along the inclined surface 107 a of the partition wall 107 , and a partial region 108 b of the hole transport layer 108 is in contact with the inclined surface 107 a of the partition wall 107 .
  • a manufacturing method of the organic EL panel 10 is described using FIG. 5A to FIG. 8C .
  • the substrate 101 is prepared.
  • the TFT 102 is formed on an upper surface in the Z-axis direction of the substrate 101 (in FIG. 5B and elsewhere, only the drain of the TFT 102 is illustrated), and the entire surface of the substrate 101 including the TFT 102 is coated by a passivation film 1030 .
  • an interlayer insulating film 1040 is deposited so as to cover the passivation film 1030 .
  • a hole is opened in the interlayer insulating film 1040 above the drain of the TFT 102 , and further, a hole is made in the passivation film 1030 at the bottom of the hole in the insulating film 1040 . In this way, the drain of the TFT 102 is exposed via a hole 104 a , 103 a in the interlayer insulating film 104 and the passivation film 103 .
  • the surface of the interlayer insulating film 104 has a protruding portion 104 b and a level portion 104 c .
  • the protruding portion 104 b is composed of a top surface in the periphery of the hole 104 a and an inclined surface 104 b 1 surrounding the top surface.
  • the anode 105 and the hole injection layer 106 are deposited in turn, as films along the surface of the interlayer insulating film 104 .
  • the anode 105 and the hole injection layer 106 are also formed on surfaces defining the hole 104 a of the interlayer insulating film 104 , and at the bottom of the hole 104 a , the anode 105 is connected to the drain of the TFT 102 . In this way, the drain of the TFT 102 and the anode 105 are connected via the contact hole CH.
  • Formation of the anode 105 as described above is achieved by, for example, depositing a metal film (Al alloy film) using a method such as sputtering, vacuum vapor deposition, etc., followed by partitioning the metal film into sub-pixels 11 a , 11 b , 11 c by using an etching process.
  • a metal film Al alloy film
  • a method such as sputtering, vacuum vapor deposition, etc.
  • sputtering is used, for example. Specifically, a mixed gas of argon (Ar) as an inert gas and oxygen (O) is introduced into a chamber of a sputtering device at a gas pressure of 4 Pa to 7 Pa, and a film is formed by using 0.7 kW to 1.5 kW of power. Note that in the mixed gas introduced into the chamber, the oxygen has a partial pressure ratio of 50% with respect to the total pressure.
  • Ar argon
  • O oxygen
  • formation of the anode 105 and the hole injection layer 106 may also be achieved by using the following method.
  • a film including a metal for example, an Al alloy
  • a film including a transition metal for example, WO X
  • the metal film and the metal oxide film is heat treated (for example, a calcination process at 230° C. or above), followed by partitioning the metal film into sub-pixels 11 a , 11 b , 11 c by using an etching process, and thereby forming the anode 105 and the hole injection layer 106 .
  • a partition wall resin layer 1070 is disposed above the hole injection layer 106 .
  • a material including a photosensitive resin component and a fluorine component may, for example, be deposited by a spin coating method.
  • a mask 500 that has openings 500 a in regions where the partition wall 107 is to be formed is provided, and mask exposure is performed.
  • patterning is performed by subjecting the partition wall resin layer 1070 to a developing process, and afterwards the partition wall 107 is formed by performing heat treatment such as calcination.
  • the partition wall 107 is formed such that, within an area that is 20% to 40% of the total height of the partition wall 107 , a taper angle is in a range of 20° to 70°. Further, liquid repellency is applied such that a contact angle with respect to anisole is in a range of 30° to 70°.
  • partition wall 107 formation of the partition wall 107 is performed, as a specific example, through exposure at all wavelengths, and puddle developing or spray developing using tetramethyl ammonium hydroxide (TMAH) developer. Afterwards, the partition wall 107 is finished by performing the steps of rinsing using pure water, and afterward calcification.
  • TMAH tetramethyl ammonium hydroxide
  • the inner edge P 1 of the partition wall 107 is set at a position along the inclined surface 100 a of the protruding portion of the underlayer 100 (corresponding to the inclined surface 104 b 1 of the protruding portion 104 b of the interlayer insulating film 104 ). Details are as described above.
  • ink 1080 for forming the hole transport layer 108 is applied to each recess that is formed by the partition wall 107 surrounding an area. Afterwards, by drying the ink 1080 , formation of the hole transport layer 108 is completed, as illustrated in FIG. 7C . As illustrated in FIG. 7C , in the present embodiment, the surface of the hole transport layer 108 contacts the inclined surface 107 a of the partition wall 107 at the contact point P 2 .
  • the ink 1080 has a viscosity in a range of 0.1 cP to 20 cP (0.0001 Pa ⁇ s to 0.02 Pa ⁇ s) and a concentration in a range of 0.1% to 10%.
  • ink 1090 for forming the light-emitting layer 109 is applied above the hole transport layer 108 , within the recess formed by the partition wall 107 surrounding an area. Viscosity and concentration of the ink 1090 is defined as being in the same range of values as described with respect to the ink 1080 .
  • the light-emitting layer is formed, as illustrated in FIG. 8B .
  • the organic EL panel 10 is finished by bonding to a CF substrate 116 .
  • the organic EL display device 1 is completed by connecting the drive/control unit 20 with respect to the organic EL panel 10 , and subjecting the organic EL panel 10 to an aging process as required.
  • FIG. 9 A position of the inner edge of the partition wall 107 that is more preferable in terms of increasing film thickness uniformity of organic films is described using FIG. 9 , FIG. 10A , and FIG. 10B .
  • the inner edge P 1 of the partition wall 107 is in contact with the surface of the underlayer 100 , which is the surface of the hole injection layer 106 , at a position along the inclined surface 100 a of the protruding portion of the underlayer 100 .
  • the hole transport layer 108 which is an organic film, is formed so as to cover all of the surface of the hole injection layer 106 that is not covered by the partition wall 107 and a portion of the inclined surface of the partition wall 107 .
  • the surface of the hole transport layer 108 and the inclined surface of the partition wall 107 contact at the contact point P 2 .
  • b denotes a height in the Z-axis direction from a lower end position of the protruding portion of the underlayer 100 (point P 12 ) to the inner edge P 1 of the partition wall 107 .
  • a 2 denotes an average film thickness of the hole transport layer 108 in a region A ave above the level portion of the underlayer 100 . If b and a 2 are defined as described above, the following relationship is satisfied. ( b/a 2 ) ⁇ 15 [Math 3]
  • the organic EL panel 10 pertaining to the present embodiment by defining the relationship between the height b and the average film thickness a 2 such that Math 3 is satisfied, occurrence of areas not covered by an organic film formed by application (the hole transport layer 108 ) is prevented and occurrence of uneven luminance is suppressed. Accordingly, the organic EL panel 10 pertaining to the present embodiment has excellent light-emitting performance.
  • FIG. 10A in a case in which an average film thickness a 3 (a 2 ) of a hole transport layer 958 has a sufficiently low value that Math 3 is not satisfied, and, as illustrated in FIG. 10B , in a case in which a height b 1 (b) of an inner edge P 4 of a partition wall 957 has a sufficiently high value that Math 3 is not satisfied, a portion of the surface of the hole injection layer 106 is not covered by the hole transport layer 958 , 968 , causing occurrence of an uncovered area A non .
  • FIG. 10A in a case in which an average film thickness a 3 (a 2 ) of a hole transport layer 958 has a sufficiently low value that Math 3 is not satisfied, and, as illustrated in FIG. 10B , in a case in which a height b 1 (b) of an inner edge P 4 of a partition wall 957 has a sufficiently high value that Math 3 is not satisfied, a portion of the surface of the hole injection layer 106 is not covered by the hole transport
  • an end position P 3 of the surface of the hole transport layer 958 is below the inner edge P 1 of the partition wall 107 in the Z-axis direction
  • an inner edge P 4 of the partition wall 957 is higher in the Z-axis direction than in the embodiment illustrated in FIG. 9 and is therefore higher in the Z-axis direction than an end position P 5 of the surface of the hole transport layer 968 .
  • the uncovered area A non occurs.
  • the surface profile of the hole transport layer (IL) 108 is described using FIG. 11 and FIG. 12 .
  • a partition wall and a hole transport layer were formed above a level base without forming an interlayer insulating film.
  • the hole transport layer was fainted having a surface profile close to that of the base near a corner portion (see circles B 3 , B 4 ).
  • FIG. 13 The relationship between ink application quantity and occurrence of uncovered areas when forming an organic film is described using FIG. 13 , FIG. 14A to FIG. 14C , and FIG. 15A to FIG. 15C .
  • FIG. 13 shows a state after application in cases in which the height b (in FIG. 13 , indicated as “underlayer protrusion height”) of the inner edge of the partition wall was defined as 150 nanometers, and an ink drop quantity was varied from two drops (2 d) to 12 drops (12 d). Note that a photoluminescence emission state was observed to determine the state after application. Here, one drop is approximately 10 pl of ink.
  • the ratios of the height b to the film thicknesses a of the organic film (b/a) were 100, 37.5, and 25, respectively.
  • an applied film 9780 was formed having a film thickness h 1 (for example, at most 100 nanometers)
  • h 1 for example, at most 100 nanometers
  • an uncovered area of the hole transport layer 106 occurred during application due to liquid repellency of the partition wall 107 .
  • an organic film (hole transport layer) 978 was formed as illustrated in FIG. 15A .
  • the end position of the organic film (hole transport layer) 978 was separated from the inner edge of the partition wall 107 , and the uncovered area A non occurred (area indicated by arrow D 1 ).
  • an average film thickness a 4 of the organic film (hole transport layer) 978 was less than or equal to 1 nanometer. Accordingly, a ratio of b to a 4 (b/a 4 ) had a value greater than or equal to 150.
  • ink having a concentration of 1% was used as described above, and when an applied film 1081 was formed having a film thickness h 3 (for example, 1 ⁇ m), the inclined surface 107 a of the partition wall 107 was substantially entirely covered due to liquid repellency of the partition wall 107 .
  • the organic film (hole transport layer) 108 was formed as illustrated in FIG. 15C .
  • the organic film (hole transport layer) 108 covered the entirety of the surface of the hole injection layer 106 that was not covered by the partition wall 107 , and an uncovered area did not occur.
  • the surface of the organic film (hole transport layer) 108 contacted the inclined surface 107 a of the partition wall 107 at a contact point P 2 .
  • an average film thickness a 6 of the organic film 108 was greater than or equal to 10 nanometers. Accordingly, a ratio of b to a 6 (b/a 6 ) had a value less than or equal to 15.
  • FIG. 16 is schematic cross-sectional view corresponding to FIG. 3 in embodiment 1
  • FIG. 17 is a schematic cross-sectional view corresponding to FIG. 9 in embodiment 1.
  • the structure of the organic EL panel 30 from the substrate 101 to the anode 105 , and from the hole transport layer 108 to the CF substrate 116 , is the same as in the above-described embodiment 1.
  • the hole injection layer 306 and the partition wall 307 are different from their equivalents in embodiment 1.
  • the partition wall 307 is formed above the anode 105 , and the structure from the TFT 102 to the anode 105 is an underlayer 300 .
  • the hole injection layer 306 pertaining to the present embodiment is an organic film including an electrically conductive polymer such as PEDOT:PSS (a polymer mixture of Poly(3,4-ethylenedioxythiophene) and polystyrene sulfonic acid) and is formed by using an application method within a recess that is formed by the partition wall 307 surrounding an area.
  • PEDOT:PSS a polymer mixture of Poly(3,4-ethylenedioxythiophene) and polystyrene sulfonic acid
  • an inner edge P 6 of the partition wall 307 is in contact with the surface of the underlayer 300 , which is the surface of the anode 105 , at a position along an inclined surface 300 a of the protruding portion of underlayer 300 .
  • the inner edge P 6 of the partition wall 307 contacts the inclined surface 300 a of the protruding portion at a position between two end points P 13 and P 14 .
  • the hole injection layer 306 which is an organic film, is formed so as to cover the entirety of the anode 105 that is not covered by the partition wall 307 and a portion of an inclined surface 307 a of the partition wall 307 .
  • the surface of the hole injection layer 306 contacts the inclined surface 307 a of the partition wall 307 at a contact point P 7 .
  • b 2 denotes a height in the Z-axis direction from a lower end position of the protruding portion of the underlayer 300 (point P 14 ) to the inner edge P 6 of the partition wall 307 .
  • a 7 denotes an average film thickness of the hole injection layer 306 in a region A ave above the level portion of the underlayer 300 . If b 2 and a 7 are defined as described above, the following relationship is satisfied. ( b 2 /a 7 ) ⁇ 15 [Math 6]
  • the organic EL panel 30 pertaining to the present embodiment by defining the relationship between the height b 2 and the average film thickness a 7 such that Math 6 is satisfied, occurrence of areas not covered by an organic film formed by application (the hole injection layer 306 ) is prevented and occurrence of uneven luminance is suppressed. Accordingly, the organic EL panel 30 pertaining to the present embodiment has excellent light-emitting performance.
  • FIG. 18 is schematic cross-sectional view corresponding to FIG. 3 in embodiment 1
  • FIG. 19 is a schematic cross-sectional view corresponding to FIG. 4 in embodiment 1.
  • the basic structure of the organic EL panel 40 pertaining to an embodiment of the present invention is the same as that of the above-described organic EL panel 10 pertaining to embodiment 1, with the exception of the form of a partition wall 407 .
  • a feature of the organic EL panel 40 pertaining to the present embodiment is that an inner edge of the partition wall 407 is positioned at a level portion of the surface of an underlayer 400 , which is the surface of the hole injection layer 106 .
  • the structure of the organic EL panel 40 is the same as described above, in that a hole transport layer 408 and a light-emitting layer 409 are formed in a recess formed by the partition wall 407 surrounding an area, and in successive unbroken layers above the light-emitting layer 409 and the partition wall 407 , an electron injection layer 410 , a cathode 411 , and a sealant layer 412 are disposed in the order stated.
  • the entirety of the protruding portion of the interlayer insulating film 104 which is caused by the contact hole CH, is covered by the partition wall 407 .
  • the surface of the underlayer 400 which is the surface of the hole injection layer 106 , has a portion that protrudes in an upward direction, which is caused by the contact hole CH, and an inclined surface 400 a between an end point P 15 and an end point P 16 .
  • inner edges of the partition walls are positioned at the inclined surface 400 a
  • an inner edge P 8 of the partition wall 407 is positioned at a level portion 400 b further toward the center of a recess than an end point P 16 of the inclined surface 400 a of the protruding portion of the underlayer 400 .
  • an end position P 9 of the surface of the hole transport layer 408 which is an organic film formed above the hole injection layer 106 , is positioned at an inclined surface of the partition wall 407 .
  • the organic EL panel 40 pertaining to the present embodiment when used, even in a case in which an organic film is formed above the underlayer 400 using a vapor-deposition method, film thickness uniformity of the organic film is ensured, and luminance concentration is suppressed. Accordingly, even in a case in which an organic film is formed using a vapor-deposition method, the organic EL panel 40 having long life is achieved.
  • FIG. 20 is a schematic cross-sectional view corresponding to FIG. 4 in embodiment 1.
  • the organic EL panel pertaining to the present embodiment combines elements of the above-described embodiment 2 and the above-described embodiment 3.
  • the surface of the anode 105 is the surface of the underlayer 500 , a portion of which is a protruding portion caused by the contact hole CH.
  • the anode 105 is formed following the surface of the interlayer insulating film 104 , and a surface thereof (the surface of the underlayer 500 ) is also protruding.
  • the partition wall 507 is formed so as to cover the entirety of an inclined surface 500 a of the protruding portion of the underlayer 500 , including an end point P 17 and an end point P 18 .
  • An inner edge P 10 of the partition wall 507 is in contact with (positioned at) a level portion 500 b further toward the center of a recess than the end point P 18 of the surface of the underlayer 500 .
  • an end position P 21 is a position at the surface of the hole injection layer 506 , which is an organic film formed above the anode 105 .
  • the end position P 21 is in contact with the inclined surface of the partition wall 507 .
  • an electrically conductive polymer such as PEDOT:PSS (a polymer mixture of Poly(3,4-ethylenedioxythiophene) and polystyrene sulfonic acid) may be used as the formation material of the hole injection layer 506 , the same way as in the hole injection layer 306 pertaining to embodiment 2.
  • the organic EL panel pertaining to the present embodiment when used, even in a case in which an organic film is formed above the underlayer 500 using a vapor-deposition method, film thickness uniformity of the organic film is ensured and luminance concentration is suppressed, as in embodiment 3. Accordingly, even in a case in which an organic film is formed using a vapor-deposition method, the organic EL panel having long life is achieved.
  • a so-called pixel bank structure is used as an example structure of the partition wall 107 , 307 , 407 , 507 .
  • the present invention is not limited in this way and may, for example, use a line bank structure.
  • the anode 105 may be formed using aluminium (Al), an aluminium alloy (Al alloy), silver (Ag), or a silver alloy (Ag alloy), as described above, or a different metal electrode having light reflectivity may be used.
  • the present invention is applied to the organic EL panels 10 , 30 , 40 , which are examples of an organic light-emitting device.
  • the present invention is not limited in this way, and may be applied to other devices for lighting.
  • a so-called top-emission device is described, but a bottom-emission device is also applicable.
  • the present invention is used to implement organic light-emitting devices having high light-emitting performance and long life.

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CN104126332A (zh) 2014-10-29
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