US8837754B2 - Microelectromechanical transducer and corresponding assembly process - Google Patents

Microelectromechanical transducer and corresponding assembly process Download PDF

Info

Publication number
US8837754B2
US8837754B2 US13/402,761 US201213402761A US8837754B2 US 8837754 B2 US8837754 B2 US 8837754B2 US 201213402761 A US201213402761 A US 201213402761A US 8837754 B2 US8837754 B2 US 8837754B2
Authority
US
United States
Prior art keywords
electrical
substrate
connection elements
cavity
die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US13/402,761
Other languages
English (en)
Other versions
US20120153771A1 (en
Inventor
Kevin Formosa
Mark Anthony Azzopardi
Mario Francesco Cortese
Mark Shaw
Alex Gritti
Luca Maggi
Filippo David
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
STMicroelectronics Malta Ltd
Original Assignee
STMicroelectronics SRL
STMicroelectronics Malta Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, STMicroelectronics Malta Ltd filed Critical STMicroelectronics SRL
Assigned to STMICROELECTRONICS S.R.L., STMICROELECTRONICS (MALTA) LTD. reassignment STMICROELECTRONICS S.R.L. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AZZOPARDI, MARK ANTHONY, CORTESE, MARIO FRANCESCO, DAVID, FILIPPO, FORMOSA, KEVIN, GRITTI, ALEX, MAGGI, LUCA, SHAW, MARK
Publication of US20120153771A1 publication Critical patent/US20120153771A1/en
Application granted granted Critical
Publication of US8837754B2 publication Critical patent/US8837754B2/en
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/0023—Packaging together an electronic processing unit die and a micromechanical structure die
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/012—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being separate parts in the same package
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/07—Interconnects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/09—Packages
    • B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/093—Conductive package seal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0172—Seals
    • B81C2203/019—Seals characterised by the material or arrangement of seals between parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/033—Thermal bonding
    • B81C2203/035—Soldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0785—Transfer and j oin technology, i.e. forming the electronic processing unit and the micromechanical structure on separate substrates and joining the substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0785—Transfer and j oin technology, i.e. forming the electronic processing unit and the micromechanical structure on separate substrates and joining the substrates
    • B81C2203/0792—Forming interconnections between the electronic processing unit and the micromechanical structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing

Definitions

  • the present disclosure relates to a transducer of a MEMS (Micro-Electro-Mechanical System) type, in particular a capacitive microphone, to which the ensuing treatment will make explicit reference, without this implying any loss of generality, and to a corresponding assembly process.
  • MEMS Micro-Electro-Mechanical System
  • the term “package” will be used herein to designate, as a whole, the casing, or covering structure, which surrounds, completely or partially, the die or dice of semiconductor material constituting the acoustic transducer, enabling electrical connection thereof to the outside (in particular, connection to a printed circuit of a corresponding electronic device).
  • an acoustic transducer for example a MEMS microphone of a capacitive type, generally comprises a micromechanical sensing structure, designed to transduce acoustic pressure waves into an electrical quantity (in particular a capacitive variation), and reading electronics, designed to carry out appropriate processing operations (amongst which amplification and filtering operations) of this electrical quantity for supplying an electrical output signal (for example, a voltage).
  • an electrical output signal for example, a voltage
  • the micromechanical sensing structure in general comprises a mobile electrode, provided as a diaphragm or membrane, set facing a fixed electrode, at a short distance of separation (gap), to provide the plates of a sensing capacitor with a capacitance that varies as a function of the acoustic pressure waves to be detected.
  • the mobile electrode is generally anchored, by means of a perimetral portion thereof, to a fixed structure, whilst a central portion thereof is free to move, or undergo deformation, in response to the pressure exerted by the incident acoustic pressure waves, in this way causing a capacitance variation of the sensing capacitor.
  • a micromechanical sensing structure of a MEMS acoustic transducer 1 comprises a structural layer 2 of semiconductor material, for example silicon, in which a cavity 3 is provided, for example via chemical etching from the back.
  • a membrane, or diaphragm, 4 is coupled to the structural layer 2 and closes the cavity 3 at the top; the membrane 4 is flexible and, in use, undergoes deformation as a function of the pressure of the incident sound waves.
  • a rigid plate 5 (generally referred to as “back-plate”) is set above the membrane 4 and faces it, via the interposition of spacers 6 (for example, made of insulating material, such as silicon oxide).
  • the back plate 5 constitutes the fixed electrode of a sensing capacitor with a variable capacitance, the mobile electrode of which is constituted by the membrane 4 , and has a plurality of holes 7 , designed to enable the circulation of air towards the membrane 4 (rendering the back plate 5 acoustically transparent).
  • the micromechanical sensing structure further comprises (in a way not illustrated) membrane and back-plate electrical contacts, used for biasing the membrane 4 and the back plate 5 and detecting a signal of capacitive variation resulting from the deformation of the membrane 4 caused by the incident acoustic pressure waves; in general, these electrical contacts are arranged in a surface portion of the die, in which the micromechanical sensing structure is provided.
  • the sensitivity of the MEMS acoustic transducer 1 depends on the mechanical characteristics of the membrane 4 of the micromechanical sensing structure (in particular upon its so-called “mechanical compliance”) and on the type of assembly of the membrane 4 and back plate 5 .
  • the volume of the front acoustic chamber or simply “front chamber” i.e., the space traversed in use by acoustic pressure waves coming from the external environment through an appropriate access port
  • the volume of the back acoustic chamber, or “back-chamber” i.e., the space that is located on the opposite side of the front chamber with respect to the membrane 4 , set in use at a reference pressure
  • the volume of the front chamber behaves as a sort of Helmholtz resonator, on account of the oscillations of the air penetrating through the access port.
  • the acoustic input signal causes an increase in the pressure of the air inside the front chamber, which consequently acts as a spring pushing out air from the same chamber.
  • the increase of pressure inside the same chamber is over-compensated, causing a pressure drop, and the negative pressure that is created in the front chamber attracts new air therein. This repeated change of pressure generates the oscillations of air inside the front chamber, at a given resonance frequency.
  • the volume of the front chamber is such as to determine the upper resonance frequency of the acoustic transducer, and hence its performance for high frequencies (in fact, the operative frequency band of the acoustic transducer has to be lower than the resonance frequency of the oscillations of the air): in general, the smaller the volume of the front chamber, the higher the upper cut-off frequency of the transducer in so far as the resonance frequency of the oscillations of air shifts towards higher frequencies.
  • the back chamber behaves, instead, as a closed volume subject to compression, with the consequence that the smaller the volume of the back chamber, the lower the sensitivity of the acoustic transducer (in fact, it is as if the deformations of the membrane were hindered by the action of a high-stiffness spring). It is hence generally desirable to provide a back chamber of large dimensions so as to improve the sensitivity of the acoustic transducer.
  • the volume of the front chamber and/or of the back chamber of the MEMS acoustic transducer not only depend upon the configuration of the micromechanical sensing structure, but also upon the conformation of the corresponding package, which has to be configured so as to house not only the same micromechanical sensing structure, but also the reading electronics associated thereto, generally provided as an ASIC in a respective die of semiconductor material.
  • a first die 10 integrating the micromechanical sensing structure (here only shown schematically), and a second die 11 , integrating the ASIC of the corresponding reading electronics, are coupled side-by-side on a substrate 12 .
  • Electrical connections 15 between the first and second dice 10 , 11 , and between the first die 10 and the substrate 12 are provided with the wire-bonding technique (i.e., with appropriate electrical wires), whilst metallization layers and vias (not shown in detail) are provided through the substrate 12 for routing the electrical signals towards the outside of the package of the MEMS acoustic transducer, which is once again designated as a whole by 1 .
  • pads in the case of an LGA—Land-Grid Array—package
  • conductive spherical elements in the case of a BGA—Ball-Grid Array—package
  • connection elements are moreover provided on the underside of the substrate 12 for soldering and electrical connection to an external printed circuit of a corresponding electronic device.
  • a cap 16 is coupled to the substrate 12 , and encloses within it the first and second dice 10 , 11 .
  • the cap 16 may be made of metal, or of a pre-molded plastic coated within with a metallization layer, in such a way as to prevent disturbance due to external electromagnetic signals (by providing a sort of Faraday cage).
  • the cap 16 is generally attached to the substrate 12 by means of a conductive glue 17 (for example, epoxy resin) so as to obtain also a ground connection towards the substrate 12 .
  • the cap 16 further has an opening 18 to enable entry into the package of acoustic pressure waves coming from the external environment.
  • the cap 16 is made through molding and hence requires, during production, a set of specific and dedicated molding tools (comprising, for example, dies and punches), for each possible variation of dimensions and shapes that may prove necessary in time, for example following upon the evolution of the dimensions of the silicon structures or upon specific requirements of the end user.
  • the pitch and layout of the molding and punching tools are not always compatible with the dimensions and configuration of the array of contacts (for example, of an MAP-BGA—Mold-Array Process—Ball-Grid Array—type) each time used for MEMS devices.
  • the production and fixing of the cap 16 to the substrate 12 cannot hence be obtained with technologies and equipment for so-called “mass production”.
  • the above solution involves large dimensions for accommodating side-by-side the two dice of the MEMS acoustic transducer and for providing the corresponding package, and in general has the disadvantage of not offering to the designer a sufficient freedom (as instead would be desirable) in the sizing of the front and back chambers of the acoustic transducer, for determination of its electrical characteristics.
  • providing the electrical connections 15 in particular towards the substrate of the package, can prove problematical in the flow of the assembly process.
  • the present disclosure is directed to an appropriate assembly of a MEMS acoustic transducer and of a corresponding package, which will enable solution of the problems highlighted above, and in particular enable reduced manufacturing costs, high acoustic performance and reliability, and small dimensions.
  • One embodiment of the present disclosure is directed to a MEMS transducer that includes a package having an internal cavity, a substrate having a first surface and a second surface, a plurality of first electrical-connection elements coupled to the first surface of the substrate, and a lid coupled to the substrate.
  • the lid includes a cap layer having a first surface and a second surface and a wall structure having a coupling surface, the wall structure positioned between the second surface of the cap layer and the first surface of the substrate to form the internal cavity.
  • the package also includes a plurality of second electrical-connection elements coupled to the coupling surface of the wall structure and coupled to the plurality of first electrical-connection elements on the substrate.
  • the transducer includes a micromechanical sensing structure coupled to the second surface of the cap layer and a first electrical component coupled to the second surface of the cap layer and coupled to the second electrical-connection elements.
  • FIG. 1 is a schematic cross section of a micromechanical sensing structure of a MEMS acoustic transducer, of a known type
  • FIG. 2 is a schematic cross section of a MEMS acoustic transducer and of the corresponding package, of a known type
  • FIGS. 3 a - 3 g show cross sections through a MEMS acoustic transducer, in successive steps of the corresponding assembly process, according to one embodiment of the present disclosure
  • FIG. 4 is a perspective schematic view of the transducer of FIG. 3 d , which moreover shows the (broken) line of cross section along which the representation of FIG. 3 d is obtained;
  • FIG. 5 is a perspective view of the transducer of FIG. 3 e , which again shows the (broken) line of cross section along which the representation of FIG. 3 e is obtained;
  • FIGS. 6 a , 6 b are schematic perspective views, respectively, from above and from beneath, partially in cutaway view, of the MEMS acoustic transducer of FIG. 3 g;
  • FIG. 7 is a cross-sectional view similar to that of FIG. 3 g , regarding a different embodiment of the present disclosure
  • FIG. 8 is a cross-sectional view similar to that of FIG. 3 g , regarding yet another different embodiment of the present disclosure.
  • FIGS. 9 a , 9 b are schematic perspective views, respectively, from above and from beneath, of the MEMS acoustic transducer of FIG. 8 ( FIG. 9 a shows the broken line of cross section along which the representation of FIG. 8 is obtained); and
  • FIGS. 10 and 11 show cross-sectional views of further embodiments of the present disclosure.
  • FIG. 12 shows a cross-sectional views of still a further embodiment of the present disclosure.
  • FIG. 13 shows a schematic top view of a composite cap layout in the embodiment of FIG. 12 ;
  • FIG. 14 shows a general block diagram of an electronic device incorporating the MEMS acoustic transducer according to a further aspect of the present invention.
  • FIG. 15 shows a cross section through a further variant of a MEMS acoustic transducer, corresponding to that of FIG. 3 c.
  • one aspect of the present disclosure envisages providing a specific cap structure for the package of a MEMS acoustic transducer, of a composite type, constituted by the assembly of two layers made of a same plastic material, obtained with standard semiconductor techniques (such as standard techniques for obtaining BGA, LGA substrates, or the like).
  • one or both of the dice of the MEMS acoustic transducer (integrating the micromechanical sensing structure and, respectively, the corresponding ASIC), and/or further electrical/electronic components, are directly coupled to the cap structure, instead of being coupled to a substrate to which the same cap structure is bonded for providing the package of the MEMS acoustic transducer and its connection to an external printed circuit board.
  • a process of assembly of a MEMS acoustic transducer initially envisages providing a first cap layer 20 and a second cap layer 21 , made of one and the same plastic material, in particular a core of an epoxy resin, and specifically a laminated BT (bismaleimide triazine).
  • the first cap layer 20 has a first main face 20 a and a second main face 20 b (where by “main faces” is meant the surfaces of greater extension of the layer, in a horizontal plane xy), and a first thickness along a vertical axis z, transverse to the horizontal plane xy.
  • the first main face 20 a is designed to define the upper face of the package of the MEMS acoustic transducer (in the so-called “top port” configuration, i.e., with a corresponding acoustic access port facing in the opposite direction with respect to the printed circuit board to which the MEMS acoustic transducer is designed to be coupled).
  • the second cap layer 21 has, in turn, a respective first main face 21 a and a respective second main face 21 b , and a second thickness, greater than the first thickness of the first cap layer 20 .
  • the second thickness is a function, for reasons that will be clarified hereinafter, of the vertical dimensions of the dice of the MEMS acoustic transducer (integrating, as previously underlined, the micromechanical sensing structure and the corresponding ASIC).
  • the main faces of the first cap layer 20 and of the second cap layer 21 are coated, with techniques of a standard type, by a thin first metal layer 22 (as shown in FIG. 3 a , the first main face 20 a of the first cap layer 20 , designed to define the outer surface of the package, may not be metallized).
  • an adhesion layer 23 is formed on the first metal layer 22 in a region corresponding to the second main face 21 b of the second cap layer 21 .
  • a cavity 24 is provided through the second cap layer 21 , traversing it throughout its thickness and moreover traversing the first metal layer 22 (in regions corresponding to both of its main faces 21 a , 21 b ) and the adhesive layer 23 .
  • the cavity 24 has, for example, a rectangular shape in plan view (in the horizontal plane xy) and, for the reasons that will be clarified hereinafter, dimensions such as to accommodate within it one or both of the dice of the micromechanical sensing structure and of the ASIC of the MEMS acoustic transducer.
  • FIG. 3 b shows only a portion of the aforesaid cap layers 20 , 21 , for providing a single MEMS device, it being, however, evident that a plurality of MEMS devices, set side-by-side, are provided by means of the same processing steps (so that, for example, several cavities 24 are made through the second cap layer 21 in this step, set at a distance apart from one another by an appropriate pitch, according to the final dimensions that the individual MEMS devices are to assume after the final cutting or “singulation” operation).
  • the first and second cap layers 20 , 21 are joined together, in a stacked way (the so-called “stacking operation”), via the interposition, between the corresponding surfaces in contact (in areas corresponding to the respective second main faces 20 b , 21 b ), of the adhesive layer 23 (the so-called “bonding operation”), forming in this way a composite cap 25 .
  • the first cap layer 20 and in particular the corresponding second main face 20 b (with the first metal layer 22 superimposed thereon), constitutes a top delimitation surface 24 a of the cavity 24 , closing it at the top (considering that, as pointed out previously, the first cap layer 20 a is designed to constitute the upper face of the package of the MEMS acoustic transducer, in a “top port” configuration).
  • a seed layer 26 is grown, constituted by a thin metal film, on the top delimitation surface 24 a of the cavity 24 , on the side walls, designated by 24 b , of the same cavity 24 and moreover on the first metal layer 22 in a region corresponding to the first main face 21 a of the first cap layer 21 .
  • a second metal layer 28 is formed on the seed layer 26 , for example using the electroplating technique or the sputtering technique, which coats, in particular, the inside of the cavity 24 .
  • an acoustic access port 29 is provided, using micromachining techniques of a standard type, through the entire thickness of the first cap layer 20 and through the first metal layer 22 , the seed layer 26 and the second metal layer 28 .
  • the acoustic access port 29 is, for example, constituted by a through hole with circular cross section extending from the first main face 20 a of the first cap layer 20 as far as the cavity 24 .
  • the acoustic access port 29 is designed to enable entry of acoustic pressure waves into the package of the MEMS acoustic transducer.
  • marking of the package can advantageously be carried out, for example for providing information regarding the manufacturing lot; in particular, marking can be carried out on the first main face 20 a of the first cap layer 20 , which is in fact accessible for the marking tools.
  • the composite cap 25 is turned upside down along a vertical direction, and, via standard cutting processes (the so-called “sawing” operation), for example using a diamond-saw cutting tool, the second metal layer 28 is appropriately processed, for providing, at the first surface 21 a of the second cap layer 21 , a plurality of cavity contact pads or lands, denoted with 30 and referred to as “CCLs” (cavity-connect lands), electrically insulated from one another.
  • CCLs cavity-connect lands
  • the cavity-connect lands 30 are designed to be contacted electrically, in particular using the wire-bonding technique, by electrical components that will subsequently be coupled to the composite cap 25 , in an area corresponding to the top delimitation surface 24 a of the cavity 24 .
  • an outer groove 32 has a perimeter substantially rectangular in the horizontal plane xy, which surrounds the cavity 24 at a given distance, and a depth such as to remove the second metal layer 28 , the seed layer 26 , and the first metal layer 22 .
  • the first and second inner grooves extend inside the outer groove 32 , at the side walls 24 b of the cavity 24 , and have substantially the same depth as the same outer groove 32 .
  • the first and second inner grooves 33 , 34 extend parallel to one another along respective major sides of the cavity 24 (in the example shown in FIG.
  • a plurality of recesses 35 are moreover cut, having for example the same depth as the grooves 32 , 33 , 34 , and extending in a direction transverse to, and starting from, the outer groove 32 , as far as the first inner groove 33 or, respectively, the second inner groove 34 (hence traversing entirely the aforesaid parallel strips of metal material).
  • the recesses 35 thus define, between them, the cavity-connect lands 30 , which are electrically insulated from one another and moreover insulated with respect to remaining portions, denoted with 28 ′, of the second metal layer 28 (which remain at the side walls 24 b of the cavity 24 and at the first main face 21 a of the second cap layer 21 , around the same cavity 24 ).
  • the remaining portions 28 ′ may advantageously electrically connected to a ground reference potential, so as to define an electromagnetic shield for the MEMS device.
  • three cavity-connect lands 30 may be provided, in a region corresponding to an end portion of each major side of the cavity 24 .
  • the depth of cut, the shape, number, and positioning of the various cavity-connect lands 30 can vary with respect to what is illustrated, for example in such a way as to be optimized with respect to the electrical connection requirements and characteristics of the MEMS acoustic transducer.
  • a first die designated once again by 10 , which integrates the micromechanical sensing structure (shown schematically, and provided, by way of non-limiting example, as described previously with reference to FIG. 1 )
  • a second die designated once again by 11 , integrating an ASIC of the corresponding reading electronics, are coupled to the composite cap 25 at the top delimitation surface 24 a of the cavity 24 .
  • a bottom surface 10 a , 11 a of both of the dice 10 , 11 is glued by means of adhesive material to the second metal layer 28 in an area corresponding to the top delimitation surface 24 a of the cavity 24 .
  • the first die 10 is positioned with respect to the composite cap 25 in such a way that the cavity 3 of the corresponding micromechanical sensing structure faces and is in fluid communication with the acoustic access port 29 so that the cavity 3 constitutes the front chamber 27 of the MEMS acoustic transducer.
  • first electrical wires 39 between the first contact pads 36 and the second contact pads 38 a in such a way as to convey the electrical quantities detected by the micromechanical sensing structure towards the ASIC
  • second electrical wires 40 between the third contact pads 38 b and respective cavity-connect lands 30 in such a way as to enable, as will be described hereinafter, carrying the electrical signals generated by the ASIC to the outside of the package or else to further electrical/electronic components present inside the same package).
  • a coating region 42 (the so-called “glob top” region), made of appropriate material, can be formed, optionally, on the top surface 11 b of the second die 11 in such a way as to shield the ASIC from light radiation at spurious wavelengths, which are not blocked by the material of the composite cap 25 and by the material (typically silicon) of which the membrane 4 and the back plate 5 of the micromechanical sensing structure are made.
  • the membrane 4 and the back plate 5 act as an interface between the outside of the package (in particular, the environment external to the acoustic access port 29 ) and the cavity 24 inside the same package.
  • a thin film of an appropriate protective material can be formed, which performs the same function of shielding the light radiation.
  • a sealing material for example, a non-conductive resin
  • a sealing material is distributed along what will be, after the final singulation operation, the perimeter of each MEMS device, and in particular inside the outer groove 32 , thus creating therein a sealing region 44 ; sealing material may also distribute within inner groove 34 and recesses 35 .
  • the sealing region 44 also constitutes an attachment base for coupling to a PCB (printed-circuit board) of a standard type.
  • the assembly process proceeds with coupling of a printed-circuit substrate 45 to the composite cap 25 in an area corresponding to the first main face 21 a of the second cap layer 21 so as to close at the bottom (with respect to vertical axis z) the cavity 24 that is to constitute the back chamber of the MEMS acoustic transducer, here designated once again by 1 .
  • the printed-circuit substrate 45 has a first main face 45 a set facing the inside of the cavity 24 , and a second main face 45 b set facing the outside of the package of the MEMS acoustic transducer 1 , here designated as a whole by 46 .
  • first main face 45 a Provided on the first main face 45 a (see in particular FIG. 6 b ) are: substrate contact pads 47 , made of metal material, for example in a number and with an arrangement corresponding to those of the cavity-connect lands 30 ; and conductive strips 48 , having shapes and an arrangement such as to superimpose (as is evident from FIGS. 6 a and 6 b ) on the aforesaid remaining portions 28 ′ of the second metal layer 28 in an area corresponding to the first main face 21 a of the second cap layer 21 , providing an electrical contact with the same portions.
  • connection paths, metallized vias, and/or further electrical-connection elements are moreover provided on the aforesaid first main face 45 a and/or inside the same printed-circuit substrate 45 .
  • elements for electrical connection towards the outside are provided on the second main face 45 b of the printed-circuit substrate 45 , in particular for connection to a printed circuit board (or other support), to which the MEMS acoustic transducer is to be coupled.
  • these electrical-connection elements are constituted by external contact pads 49 (connection with the LGA technique), which are appropriately connected (for example, by the metallized vias 49 A traversing the printed-circuit substrate 45 ) to the substrate contact pads 47 and/or the conductive strips 48 .
  • contact regions 50 e.g. bumps of a solder-paste, are pre-applied in appropriate areas on the first main face 45 a of the printed-circuit substrate 45 , for example in areas corresponding to the substrate contact pads 47 and/or the conductive strips 48 .
  • the contact regions 50 can be applied using the screen-printing technique, or pre-applied during production of the printed-circuit substrate 45 .
  • the printed-circuit substrate 45 is positioned, using the flip-chip technique, with the first main face 45 a facing the first main face 21 a of the second cap layer 21 (in particular exploiting the resting base offered by the sealant region 44 ) in such a way that the substrate contact pads 47 are positioned at the cavity-connect lands 30 .
  • the stacked assembly of the printed-circuit substrate 45 and the composite cap 25 is subjected to brazing (the so-called “reflow” operation), in such a way as to obtain their mechanical and electrical bonding, by soldering.
  • the package 46 is formed and the back chamber of the MEMS acoustic transducer 1 (constituted by the cavity 24 internal to the package 46 ) is defined, which is thus sealed from the external environment and also shielded from electromagnetic disturbance.
  • the ASIC in the second die 11 of the MEMS acoustic transducer 1 is, at the end of the aforesaid stacked assembly, automatically connected by means of the electrical connections described to the substrate contact pads 47 , and, consequently, to the external contact pads 49 for connection towards the outside of the package 46 .
  • the contact regions 50 are located beside the sealing region 44 , within the package 46 .
  • the same contact regions 50 thus define both electrical contacts between the cavity-connect lands 30 and the substrate contact pads 47 , and closure of the electromagnetic shield for the MEMS transducer, connecting the remaining portions 28 ′ of the second metal layer 28 and the conductive strips 48 to the ground reference potential.
  • both the sealing region 44 and the electrical contact regions 50 may be made of a same material, in particular a special resin, like the Anisotropic Conductive Paste (ACP) by ThreeBond Co., Ltd., which, after a single press process, may provide conductivity between the pads along the vertical axis z and also non-conductivity in the horizontal plane xy, so as to electrically insulate the same pads along the x and y axes.
  • ACP Anisotropic Conductive Paste
  • the various MEMS acoustic transducers 1 (and the corresponding packages 46 ) are singulated.
  • the finished devices are then subjected to the usual testing procedures (for the so-called “sorting” operation).
  • sorting operation
  • the shielding effect provided by the composite cap 25 in regard to the cavity 24 is enhanced as compared to traditional structures, thanks to the fact that two layers of the same material (first and second cap layers 20 , 21 ) are coupled together and to the fact that the inside of the same cavity 24 is uniformly coated with one and the same layer of conductive material (the second metal layer 28 ).
  • the sealing region 44 of non-conductive material, for coupling between the composite cap 25 and the printed-circuit substrate 45 enables improved hermetic sealing.
  • the definition of the cavity-connect lands 30 when providing the composite cap 25 advantageously enables different conductive patterns and electrical-connection pads to be obtained on the portions of the first main face 21 a of the second cap layer 21 adjacent to the cavity 24 , for connection to the printed-circuit substrate 45 during assembly of the package 46 .
  • the front chamber 27 of the MEMS acoustic transducer is in this case constituted by just the cavity 3 of the corresponding micromechanical sensing structure, and can consequently be controlled via an appropriate design of the micromechanical same sensing structure; in particular, it is easy to obtain reduced volumes of the front chamber.
  • This solution also renders the assembly process more robust given that the volume of the front chamber does not depend upon the realization and proper positioning of the components within the cavity 24 .
  • the volume of the back chamber is represented by the entire cavity 24 , internal to the package 46 , so that the upper limit for this volume is represented only by the external dimensions of the package 46 , which can easily be defined at the design stage.
  • the characteristics of the back chamber are linked principally to the structure of the package 46 , it is possible to obtain micromechanical sensing structures of small dimensions (for example, using thinner silicon wafers as starting structural layers).
  • a different embodiment of the present disclosure envisages the possibility that further electrical components 52 , for example SMDs (surface-mounted devices), are coupled, in a known way, to the first main face 45 a of the printed-circuit substrate 45 .
  • the electrical components 52 can be resistors, capacitors, or other active or passive components.
  • further packages of electronic devices such as full-molded or pre-molded packages can be arranged inside the cavity 24 (by means of coupling to the first main face 45 a of the printed-circuit substrate 45 ).
  • the possibility of exploiting the first main face 45 a of the printed-circuit substrate 45 (to which in this case the dice of the MEMS acoustic transducer are not coupled) for connection of further electrical/electronic components advantageously enables maximization of the space occupied inside the cavity 24 , in this way reducing the occupation of area on the external printed circuit board to which the package 46 of the MEMS acoustic transducer 1 is coupled. Furthermore, this solution guarantees that all the electrical components 52 inside the package 46 are adequately shielded from EMI disturbance, since they are arranged inside the cavity 24 , which is in turn totally shielded.
  • the electrical components 52 are, at least in part, vertically set on top of the first die 10 inside the package 46 .
  • the electrical components 52 can be electrically connected to the ASIC integrated in the second die 11 , through the cavity-connect lands 30 , the second electrical wires 40 , the contact regions 50 , the substrate contact pads 47 , and appropriate electrical paths (or similar electrical connections) integrated in the printed-circuit substrate 45 .
  • the electrical components 52 are connected to the outside of the package through the external contact pads 49 and, again, electrical paths (or other electrical connections) in the printed-circuit substrate 45 .
  • FIG. 8 envisages that the second die 11 (integrating the ASIC) is coupled, with traditional techniques, to the first main face 45 a of the printed-circuit substrate 45 , together with the possible further electrical components 52 .
  • the first electrical wires 39 are connected inside the package 46 between the first contact pads 36 and the cavity-connect lands 30 , whilst the second electrical wires 40 connect the second contact pads 38 a (which define input pads) with the substrate contact pads 47 (for receiving the electrical quantities generated by the micromechanical sensing structure), and further second electrical wires, which are also designated by 40 , connect the third contact pads 38 b (which define output pads) to the external contact pads 49 and/or to the further electrical components 52 .
  • This solution can possibly enable a saving in the occupation of area in the horizontal plane xy inside the package 46 .
  • the horizontal dimensions of the package 46 may be further reduced in the case in which the second die 11 (integrating the ASIC) is placed overlying the first die 10 inside the same package.
  • the second die 11 is attached to the first main face 45 a of the printed-circuit substrate 45 in a position vertically corresponding to the first die 10 , at least partially overlying the cavity 3 (the printed-circuit substrate 45 being placed with the “flip-chip” technique).
  • the vertical dimensions of the package 46 are such as to accommodate both dice 10 , 11 , while touching of the overlapping first and second electrical wires 39 , 40 may be avoided by a suitable offset in the horizontal plane xy of the corresponding contact pads.
  • a “glob top” region may advantageously be formed on the top surface 11 b of the second die 11 , to protect the electrical wires.
  • the horizontal dimensions of the cavity 24 may be such that lateral sides of the first die 10 are close to the second metal layer 28 , which coats the inside of the same cavity 24 .
  • this solution may advantageously allow to achieve horizontal dimensions of the package 46 as small as 2 mm ⁇ 2 mm.
  • this solution provides very short paths of the electrical wirings between the dice 10 , 11 , while still providing large volumes of the back and front chambers.
  • the second die 11 may be coupled to the first main face 45 a of the printed-circuit substrate 45 with the flip-chip technique, i.e., using suitable contact pads (e.g. in the form of lands or ball), again denoted with 38 a or 38 b , provided on the active surface of the die for electrical and mechanical contact to the printed-circuit substrate 45 .
  • suitable contact pads e.g. in the form of lands or ball
  • this solution allows to further reduce the vertical occupation of the space inside the package 46 , thanks to the absence of electrical wirings 40 for electrical connection of the second die 11 , and is thus particularly suitable to achieve small overall dimensions (e.g., in the case of the 2 mm ⁇ 2 mm package).
  • a further aspect of the present disclosure is directed to a further improvement of the EMI shielding for the MEMS acoustic transducer.
  • electrical wires carrying signals e.g., the first electrical wires 39 connecting the cavity connect lands 30 to the substrate contact pads 47 through the contact regions 50 in the embodiment just discussed shown in FIGS. 10 , 11
  • electrical wires carrying signals e.g., the first electrical wires 39 connecting the cavity connect lands 30 to the substrate contact pads 47 through the contact regions 50 in the embodiment just discussed shown in FIGS. 10 , 11
  • the package lateral side surfaces or edges
  • problems of interferences with external electromagnetic waves this issue may be particularly felt in the case of acoustic transducers.
  • the additional contact pads are denoted as shielding pads 55 , and are connected via further contact regions 50 to further conductive strips 48 (or analogous contact regions) on the first main face 45 a of the printed-circuit substrate 45 .
  • Shielding pads 55 are electrically connected to the ground reference potential, so as to define an EMI shield for the MEMS transducer (together with the remaining portions 28 ′ of the second metal layer 28 ).
  • the sealing region 44 is in this case provided externally to the further contact regions 50 , at the edge of the package 46 of the MEMS acoustic transducer.
  • the lateral distance between the shielding pads 55 and the cavity connect lands 30 may be properly designed according to the needs and electrical features of the particular MEMS transducer being realized.
  • FIG. 13 shows schematically a possible layout of the various contacts in the composite cap 25 , in an embodiment where, besides two cavity connect lands 30 , two aligned shielding pads 55 are provided, which provide, together with the remaining portions 28 ′ of the second metal layer 28 a complete electromagnetic shield for the MEMS transducer, surrounding the cavity 24 at all its sides.
  • the assembly described enables convenient tuning of the volumes of the front and back chambers of the MEMS acoustic transducer 1 and achievement of high electrical performance of the transducer in terms, for example, of the frequency response and of the signal-to-noise ratio (SNR).
  • SNR signal-to-noise ratio
  • the described process makes it possible to carry out marking of the package 46 in an initial step thereof, thus enabling elimination of the risk of contamination by dust or by external agents of the MEMS acoustic transducer 1 (which in the initial step has not yet been coupled to the structure being assembled).
  • the layout proposed for the package 46 of the MEMS acoustic transducer 1 moreover minimizes exposure of the electrical/electronic components inside the cavity 24 to light radiation, given that light radiation is largely absorbed by the micromechanical sensing structure integrated in the first die 10 , which is set between the acoustic access port 29 and the inside of the cavity 24 .
  • the electrical wire connections inside the cavity 24 in particular for connection between the first and second dice 10 , 11 , are better protected from the outside environment, as compared to traditional package solutions (of the same “top port” type).
  • the mechanical robustness of the assembly is in general improved, given that the micromechanical sensing structure (integrated in the first die 10 ) is attached to the composite cap 25 in an area corresponding to its internal surface opposite to the printed-circuit substrate 45 (the top delimitation surface 24 a of the cavity 24 ) so that the sturdiness and strength at drop tests are improved.
  • EMI shielding of the MEMS transducer is enhanced in case shielding pads 55 are provided laterally to the cavity connect lands 30 .
  • the characteristics previously listed render the use of the MEMS acoustic transducer 1 particularly advantageous in an electronic device 60 , as shown in FIG. 14 .
  • the electronic device 60 is preferably a mobile communications device, such as, for example, a cell phone, a PDA, a notebook, but also a voice recorder, an audio-file reader with voice-recording capacity, etc.
  • the electronic device 60 may be a hydrophone, capable of working under water, or else a hearing-aid device.
  • the electronic device 60 comprises a microprocessor (CPU—central processing unit) 61 , a memory block 62 , connected to the microprocessor 61 , and an input/output interface 63 , for example provided with a keyboard and a display, which is also connected to the microprocessor 61 .
  • the MEMS acoustic transducer 1 communicates with the microprocessor 61 .
  • the ASIC in the second die 11 sends electrical output signals to the microprocessor 61 (a further electronic circuit for processing these electrical output signals, designated by 65 , may possibly be present).
  • a loudspeaker 66 is also provided for generation of sounds on an audio output (not shown) of the electronic device 60 .
  • the MEMS acoustic transducer 1 As shown schematically, the MEMS acoustic transducer 1 , the microprocessor 61 , the memory block 62 , the input/output interface 63 , and the possible further electronic components are coupled to a single printed circuit board 67 , for example using the SMD technique.
  • the early steps of the manufacturing process may be modified so as to achieve a direct bonding between the first cap layer 20 and the second cap layer 21 , without the interposition of a metal layer.
  • boundary portions of the first metal layer 22 are selectively removed from the main faces of the first and second cap layers 20 , 21 , before attaching the same cap layers via the adhesion layer 23 (and forming the cavity 24 , as previously discussed).
  • the adhesion layer 23 (generally an organic material) has a better adherence with the core material of the first and second cap layers 20 , 21 , as compared to the metal layer; also, singulation of the finished devices, via a cutting operation, leads to a smaller number of defects, thanks to the absence of a intermediate metal layer between the cap layers 20 , 21 .
  • the number and arrangement of the shielding pads 55 arranged laterally to the cavity connect lands 30 may vary from what has been shown, while maintaining the discussed EMI shielding function.
  • the assembly proposed can advantageously be used also for other types of MEMS transducers and corresponding packages, envisaging the presence of an access port enabling fluid communication between the external environment and the inside of the package.
US13/402,761 2009-12-23 2012-02-22 Microelectromechanical transducer and corresponding assembly process Active 2031-08-04 US8837754B2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
ITTO2009A001036A IT1397976B1 (it) 2009-12-23 2009-12-23 Trasduttore di tipo microelettromeccanico e relativo procedimento di assemblaggio.
ITTO2009A1036 2009-12-23
ITTO2009A001036 2009-12-23
PCT/EP2010/070608 WO2011076910A1 (en) 2009-12-23 2010-12-22 Microelectromechanical transducer and corresponding assembly process

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/070608 Continuation-In-Part WO2011076910A1 (en) 2009-12-23 2010-12-22 Microelectromechanical transducer and corresponding assembly process

Publications (2)

Publication Number Publication Date
US20120153771A1 US20120153771A1 (en) 2012-06-21
US8837754B2 true US8837754B2 (en) 2014-09-16

Family

ID=42244334

Family Applications (1)

Application Number Title Priority Date Filing Date
US13/402,761 Active 2031-08-04 US8837754B2 (en) 2009-12-23 2012-02-22 Microelectromechanical transducer and corresponding assembly process

Country Status (5)

Country Link
US (1) US8837754B2 (it)
EP (1) EP2517480B1 (it)
CN (1) CN102742301B (it)
IT (1) IT1397976B1 (it)
WO (1) WO2011076910A1 (it)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140161289A1 (en) * 2012-12-12 2014-06-12 Aac Acoustic Technologies (Changzhou) Co., Ltd. Silicon Condenser Microphone
WO2016068710A1 (en) 2014-10-29 2016-05-06 Technische Universiteit Delft Mircroreactor for use in electron microscopy
US10327076B1 (en) * 2010-07-12 2019-06-18 Amkor Technology, Inc. Top port MEMS package and method

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITTO20110577A1 (it) 2011-06-30 2012-12-31 Stmicroelectronics Malta Ltd Incapsulamento per un sensore mems e relativo procedimento di fabbricazione
JP5327299B2 (ja) * 2011-09-09 2013-10-30 オムロン株式会社 半導体装置及びマイクロフォン
JP5633493B2 (ja) * 2011-09-16 2014-12-03 オムロン株式会社 半導体装置及びマイクロフォン
US8502327B1 (en) * 2012-01-26 2013-08-06 Honeywell International Inc. Systems and methods for conductive pillars
US9485560B2 (en) 2012-02-01 2016-11-01 Knowles Electronics, Llc Embedded circuit in a MEMS device
US8995694B2 (en) 2012-02-01 2015-03-31 Knowles Electronics, Llc Embedded circuit in a MEMS device
DE102012101505B4 (de) * 2012-02-24 2016-03-03 Epcos Ag Verfahren zur Herstellung eines Sensors
ITTO20120515A1 (it) 2012-06-14 2013-12-15 St Microelectronics Nv Assemblaggio di un dispositivo integrato a semiconduttori e relativo procedimento di fabbricazione
TWI606731B (zh) * 2012-09-10 2017-11-21 博世股份有限公司 麥克風封裝件及製造麥克風封裝件之方法
FR2995721B1 (fr) * 2012-09-17 2014-11-21 Commissariat Energie Atomique Capot pour dispositif a rainure et a puce, dispositif equipe du capot, assemblage du dispositif avec un element filaire et procede de fabrication
ITTO20120827A1 (it) * 2012-09-24 2014-03-25 St Microelectronics Srl Incapsulamento a livello di fetta di un dispositivo integrato mems e relativo procedimento di fabbricazione
ITTO20120976A1 (it) * 2012-11-09 2014-05-10 St Microelectronics Srl Procedimento per la fabbricazione di un cappuccio per una struttura di incapsulamento di dispositivi elettronici e cappuccio per una struttura di incapsulamento di dispositivi elettronici
US20140133686A1 (en) * 2012-11-14 2014-05-15 Knowles Electronics, Llc Apparatus to prevent excess movement of mems components
US9082883B2 (en) 2013-03-04 2015-07-14 Unisem (M) Berhad Top port MEMS cavity package and method of manufacture thereof
ITTO20130350A1 (it) 2013-04-30 2014-10-31 St Microelectronics Srl Assemblaggio a livello di fetta di un dispositivo sensore mems e relativo dispositivo sensore mems
CN110078016A (zh) * 2013-09-30 2019-08-02 日月光半导体制造股份有限公司 封装结构及其制造方法
US20160100256A1 (en) * 2013-10-30 2016-04-07 Knowles Electronics, Llc Acoustic Assembly and Method of Manufacturing The Same
US20150117681A1 (en) * 2013-10-30 2015-04-30 Knowles Electronics, Llc Acoustic Assembly and Method of Manufacturing The Same
CN203708484U (zh) * 2013-12-30 2014-07-09 瑞声声学科技(深圳)有限公司 麦克风
US9307328B2 (en) 2014-01-09 2016-04-05 Knowles Electronics, Llc Interposer for MEMS-on-lid microphone
US9532125B2 (en) * 2014-06-06 2016-12-27 Cirrus Logic, Inc. Noise cancellation microphones with shared back volume
US10138115B2 (en) * 2014-08-06 2018-11-27 Infineon Technologies Ag Low profile transducer module
EP3216229A1 (en) * 2014-11-06 2017-09-13 Robert Bosch GmbH Lead frame-based chip carrier used in the fabrication oe mems transducer packages
US20170320726A1 (en) * 2014-11-10 2017-11-09 At & S Austria Technologie & Systemtechnik Aktiengesellschaft MEMS Package
EP3018092A1 (en) * 2014-11-10 2016-05-11 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft MEMS package
KR101554364B1 (ko) * 2014-12-30 2015-09-21 (주)이미지스테크놀로지 리드프레임을 이용한 멤스 마이크로폰 패키지
KR101672620B1 (ko) 2015-01-30 2016-11-04 앰코 테크놀로지 코리아 주식회사 폴리머 기판를 이용한 반도체 패키지
CN104581511A (zh) * 2015-02-04 2015-04-29 邓瑞瑞 一种电磁屏蔽扬声器
DE112016001352B4 (de) * 2015-03-23 2024-03-14 Knowles Electronics, Llc Eingebettete Schaltung in einer MEMS-Vorrichtung
USD789181S1 (en) * 2015-12-23 2017-06-13 Roger Webb Modular furniture part
US9828237B2 (en) * 2016-03-10 2017-11-28 Infineon Technologies Ag MEMS device and MEMS vacuum microphone
EP3429957B1 (en) * 2016-03-14 2020-06-24 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Component carrier with integrated wall structure for subsequent assembly of an electronic component
US20180134546A1 (en) * 2016-11-14 2018-05-17 Amkor Technology, Inc. Semiconductor device and manufacturing method thereof
IT201600121003A1 (it) * 2016-11-29 2018-05-29 St Microelectronics Srl Dispositivo integrato a semiconduttore con contatti elettrici tra piastrine impilate e relativo procedimento di realizzazione
US10179730B2 (en) * 2016-12-08 2019-01-15 Texas Instruments Incorporated Electronic sensors with sensor die in package structure cavity
US10501312B2 (en) * 2017-07-18 2019-12-10 Infineon Technologies Ag Over-under sensor packaging with sensor spaced apart from control chip
US10517184B2 (en) * 2018-02-09 2019-12-24 Eaton Intelligent Power Limited Configurable electronics packages
US10672715B2 (en) 2018-04-16 2020-06-02 Amkor Technology, Inc. Semiconductor package using cavity substrate and manufacturing methods
EP3654053A1 (en) * 2018-11-14 2020-05-20 Infineon Technologies AG Package with acoustic sensing device(s) and millimeter wave sensing elements
EP3680211B1 (en) * 2019-01-10 2024-03-06 TE Connectivity Solutions GmbH Sensor unit and method of interconnecting a substrate and a carrier
CN110054144A (zh) * 2019-04-22 2019-07-26 武汉耐普登科技有限公司 微机电传感器封装结构及制造方法
CN212324360U (zh) * 2020-06-30 2021-01-08 瑞声声学科技(深圳)有限公司 麦克风
CN117712057A (zh) * 2024-02-06 2024-03-15 成都汉芯国科集成技术有限公司 一种多级金刚石抗辐射过载的芯片封装结构及封装方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070071268A1 (en) 2005-08-16 2007-03-29 Analog Devices, Inc. Packaged microphone with electrically coupled lid
US20080279407A1 (en) 2005-11-10 2008-11-13 Epcos Ag Mems Microphone, Production Method and Method for Installing
US20080283988A1 (en) 2007-05-15 2008-11-20 Industrial Technology Research Institute Package and packaging assembly of microelectromechanical sysyem microphone
US20100183174A1 (en) * 2009-01-21 2010-07-22 Nokia Corporation Microphone package

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001019134A2 (en) * 1999-09-06 2001-03-15 Microtronic A/S Silicon-based sensor system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070071268A1 (en) 2005-08-16 2007-03-29 Analog Devices, Inc. Packaged microphone with electrically coupled lid
US20080279407A1 (en) 2005-11-10 2008-11-13 Epcos Ag Mems Microphone, Production Method and Method for Installing
US20080283988A1 (en) 2007-05-15 2008-11-20 Industrial Technology Research Institute Package and packaging assembly of microelectromechanical sysyem microphone
US20100183174A1 (en) * 2009-01-21 2010-07-22 Nokia Corporation Microphone package

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Cheah, L.K. et al., "Gold to Gold Thermosonic Flip-Chip Bonding," Proceedings HDI 2001, pp. 165-175, Apr. 2001.

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10327076B1 (en) * 2010-07-12 2019-06-18 Amkor Technology, Inc. Top port MEMS package and method
US20140161289A1 (en) * 2012-12-12 2014-06-12 Aac Acoustic Technologies (Changzhou) Co., Ltd. Silicon Condenser Microphone
US9107009B2 (en) * 2012-12-12 2015-08-11 Aac Acoustic Technologies (Shenzhen) Co., Ltd. Silicon condenser microphone
WO2016068710A1 (en) 2014-10-29 2016-05-06 Technische Universiteit Delft Mircroreactor for use in electron microscopy
NL2013706B1 (en) * 2014-10-29 2016-10-04 Univ Delft Tech Improved microreactor for use in microscopy.
US9922797B2 (en) 2014-10-29 2018-03-20 Technische Universiteit Delft Microreactor for use in microscopy

Also Published As

Publication number Publication date
CN102742301A (zh) 2012-10-17
CN102742301B (zh) 2015-09-02
US20120153771A1 (en) 2012-06-21
EP2517480B1 (en) 2015-08-19
IT1397976B1 (it) 2013-02-04
EP2517480A1 (en) 2012-10-31
ITTO20091036A1 (it) 2011-06-24
WO2011076910A1 (en) 2011-06-30

Similar Documents

Publication Publication Date Title
US8837754B2 (en) Microelectromechanical transducer and corresponding assembly process
US10329143B2 (en) Package with chambers for dies and manufacturing process thereof
US8836111B2 (en) Semiconductor integrated device assembly and related manufacturing process
KR101686707B1 (ko) 표면 장착 가능 마이크 패키지, 마이크 장치, 모바일 폰 및 마이크 신호를 녹음하기 위한 방법
US9769554B2 (en) Semiconductor integrated device for acoustic applications with contamination protection element, and manufacturing method thereof
US10597287B2 (en) Multi-chamber transducer module, apparatus including the multi-chamber transducer module and method of manufacturing the multi-chamber transducer module
US8759149B2 (en) Encapsulated micro-electro-mechanical device, in particular a MEMS acoustic transducer
US9337354B2 (en) Top port MEMS cavity package and method of manufacture thereof
CN106331966B (zh) 微机电麦克风和用于制造微机电麦克风的方法
US9628919B2 (en) Wafer level assembly of a MEMS sensor device and related MEMS sensor device
EP3330688B1 (en) Multi-transducer modulus, electronic apparatus including the multi-transducer modulus and method for manufacturing the multi-transducer modulus
US8999757B2 (en) Top port MEMS cavity package and method of manufacture thereof
WO2013156539A1 (en) Assembly of a semiconductor integrated device including a mems acoustic transducer
CN109644307B (zh) 麦克风和压力传感器封装件以及制造麦克风和压力传感器封装件的方法
JP2017517938A (ja) 拡大されたバックチャンバを備えたマイクロホンおよび製造方法
KR101953089B1 (ko) Mems 트랜스듀서 패키지들의 제조시 사용된 리드 프레임 기반 칩 캐리어

Legal Events

Date Code Title Description
AS Assignment

Owner name: STMICROELECTRONICS S.R.L., ITALY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FORMOSA, KEVIN;AZZOPARDI, MARK ANTHONY;CORTESE, MARIO FRANCESCO;AND OTHERS;SIGNING DATES FROM 20120206 TO 20120210;REEL/FRAME:027766/0553

Owner name: STMICROELECTRONICS (MALTA) LTD., MALTA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FORMOSA, KEVIN;AZZOPARDI, MARK ANTHONY;CORTESE, MARIO FRANCESCO;AND OTHERS;SIGNING DATES FROM 20120206 TO 20120210;REEL/FRAME:027766/0553

STCF Information on status: patent grant

Free format text: PATENTED CASE

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551)

Year of fee payment: 4

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8