US8747792B2 - Method for preparing high-purity elemental phosphorus and method for preparing high-purity phosphoric acid - Google Patents

Method for preparing high-purity elemental phosphorus and method for preparing high-purity phosphoric acid Download PDF

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US8747792B2
US8747792B2 US13/179,882 US201113179882A US8747792B2 US 8747792 B2 US8747792 B2 US 8747792B2 US 201113179882 A US201113179882 A US 201113179882A US 8747792 B2 US8747792 B2 US 8747792B2
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phosphorus
white phosphorus
acid
crude white
aqueous solution
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US20120009112A1 (en
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Yutaka Kinose
Toru Hata
Mari Aikawa
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Nippon Chemical Industrial Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/02Preparation of phosphorus
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/04Purification of phosphorus
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/16Oxyacids of phosphorus; Salts thereof
    • C01B25/18Phosphoric acid
    • C01B25/20Preparation from elemental phosphorus or phosphoric anhydride

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  • the present invention relates to a method for preparing high-purity elemental phosphorus, in particular, one suitable for use as a raw material for high-purity dry phosphoric acid for semiconductor applications and a method for preparing high-purity phosphoric acid using the same.
  • White phosphorus contains traces of metal impurities such as Fe, Sb, As and Zn. These metal impurities are derived from phosphate rock, as a raw material of white phosphorus, and are present as impurities in phosphoric acid when the phosphoric acid is prepared from white phosphorus. In recent years, phosphate rock, one white phosphorus raw material, has undergone deterioration in qualities in terms of a resource. Accordingly, the level of impurities, in particular, arsenic or antimony, present in white phosphorus has increased.
  • Arsenic in crude phosphoric acid is insolubilized as an arsenic sulfide by blowing hydrogen sulfide gas into crude phosphoric acid and can be removed to a level of 30 ppb or less by filtration.
  • the level of arsenic in crude phosphoric acid increases, it takes a long period of time to filter arsenic sulfide, and problems such as deterioration in the filtration rate caused by clogging of arsenic sulfide or a great deterioration in the operation efficiency of a phosphoric acid purification process due to a complicated exchange operation for furnaces occur.
  • Antimony in crude phosphoric acid is also insolubilized by blowing hydrogen sulfide gas into crude phosphoric acid and is removed by filtration.
  • High-purity phosphoric acid is used as an etching agent for SiN films used for silicon wafers for semiconductor applications. In some cases, it is difficult to reduce the amount of impurities present in high-purity phosphoric acid for semiconductor applications and it is thus required to reduce the amount of antimony to 200 ppb or less.
  • Washing with nitric acid is suggested as a method of removing arsenic from crude white phosphorus (for example, see Japanese Patent Application Laid-open No 49-95891).
  • This method has high arsenic removal efficiency, but disadvantageously entails a decrease of white phosphorus yield to about 50% after washing, since phosphorus is released in nitric acid, and production of a great amount of nitric acid waste containing phosphoric acid.
  • Another removal method includes mixing crude white phosphorus with an iodine compound such as iodine oxide or iodic acid, heating the mixture to convert arsenic in the phosphorous into arsenic oxide and heating the mixture to the boiling point or less of arsenic oxide to recover elemental phosphorus (for example, see Japanese Patent Application Laid-open No 06-40710).
  • an iodine compound such as iodine oxide or iodic acid
  • U.S. Pat. No. 5,989,509 discloses a method for purifying white phosphorus by stirring white phosphorus in an aqueous phase containing hydrogen peroxide for one hour or longer to reduce the amount of antimony in the white phosphorus to 200 ppb or less.
  • removal effects of arsenic are not considered.
  • PCT Japanese Translation Patent Publication No 2002-516809 discloses a method of removing both arsenic and antimony by bringing liquid crude white phosphorus into contact with an iodine compound such as iodine, iodic acid or iodate and an oxidizing agent such as hydrogen peroxide in the presence of water.
  • an iodine compound such as iodine, iodic acid or iodate
  • an oxidizing agent such as hydrogen peroxide
  • a method for preparing high-purity elemental phosphorus including: bringing liquid crude white phosphorus into contact with an iodic acid-containing compound selected from iodic acid and iodates in an aqueous solvent in the presence of a chelating agent.
  • a method for preparing high-purity phosphoric acid including: combusting the high-purity elemental phosphorus obtained according to the first aspect to produce phosphorus pentoxide gas and hydrating the gas.
  • the method for preparing high-purity elemental phosphorus of the invention it is possible to simultaneously remove both arsenic and antimony from crude white phosphorus containing a great amount of arsenic and antimony as impurities.
  • FIG. 1 is a schematic view illustrating the structure of an apparatus for preparing high-purity phosphoric acid from elemental phosphorus according to one embodiment of the present invention.
  • crude white phosphorus refers to crude white phosphorus which contains at least arsenic at 10 ppm or more, preferably 50 to 250 ppm, and antimony at 1 ppm or more, preferably 3 to 20 ppm.
  • the preparation process of crude white phosphorus is not limited, and crude white phosphorus, for example, is obtained by reduction-melting a mixture of phosphate rock, silica stone and carbon material such as coke in an electric furnace for producing phosphorus and collecting gasified white phosphorus, or by heating calcium phosphate, silicates and carbon in an electric furnace and solidifying the formed phosphorus vapor in water and is not limited to those obtained by these methods.
  • Any crude white phosphorus may be used for the present invention so long as it contains arsenic and antimony in amounts as defined above.
  • the crude white phosphorus is commonly a wax-like transparent lemon yellow solid, which melts and undergoes phase-transition to a liquid, when heated to a melting point (44.1° C.) or higher.
  • crude white phosphorus is heated to the melting point or higher and the resulting liquid crude white phosphorus comes into contact with an iodic acid compound selected from iodic acid and iodates in an aqueous solvent in the presence of a chelating agent.
  • Examples of an iodic acid-containing compound used for the preparation method of the present invention include, in addition to iodic acid, iodates such as sodium iodate, potassium iodate, magnesium iodate, barium iodate, calcium iodate, lithium iodate and ammonium iodate.
  • iodates such as sodium iodate, potassium iodate, magnesium iodate, barium iodate, calcium iodate, lithium iodate and ammonium iodate.
  • iodic acid and sodium iodate as the iodic acid-containing compound is particularly preferable, from the viewpoint that they are inexpensive and are easy to exhaust water.
  • the iodic acid-containing compound may be used alone or in a combination thereof of two or more types.
  • the amount of iodic acid-containing compound added is preferably 0.1 to 5 parts by weight, preferably 1 to 4 parts by weight, based on a conversion of HIO 3 , with respect to 100 parts by weight of crude white phosphorus, from the viewpoint that arsenic and antimony can be effectively removed from white phosphorus.
  • the amount of iodic acid-containing compound added is lower than 0.1 parts by weight, based on a conversion of HIO 3 , removal effects of arsenic and antimony from white phosphorus are reduced.
  • the amount of iodic acid-containing compound added is higher than 5 parts by weight, based on a conversion of HIO 3 , iodic acid reacts with white phosphorus, disadvantageously causing a decrease in white phosphorus yield.
  • Any chelating agent may be used for the preparation method of the present invention without particular limitation so long as it has chelating effects on antimony and arsenic.
  • preferred chelating agents include polyvalent carboxylic acids, polyvalent carboxylates, phosphonic acid and phosphonates from the viewpoint that they have superior chelating effects on antimony and arsenic.
  • polyvalent carboxylic acids and polyvalent carboxylates include amino carboxylic acids such as hydrazine, triethanolamine, glycine, alanine, asparagine, iminodiacetic acid, glutamic acid, ethylenediamine, ethylenediaminetetraacetic acid, or alkali metal salts thereof; and oxycarboxylic acids such as acetic acid, lactic acid, oxalic acid, malonic acid, maleic acid, tartaric acid, citric acid, salicylic acid and thioglycolic acid or alkali metal salts thereof.
  • amino carboxylic acids such as hydrazine, triethanolamine, glycine, alanine, asparagine, iminodiacetic acid, glutamic acid, ethylenediamine, ethylenediaminetetraacetic acid, or alkali metal salts thereof
  • oxycarboxylic acids such as acetic acid, lactic acid, oxalic acid, malonic acid, male
  • Examples of phosphonic acid and phosphonates include nitrilotris(methylenephosphonic acid), hydroxyethane diphosphonic acid, or alkali metal salts thereof.
  • ethylenediaminetetraacetic acid and alkali metal salts thereof; citric acid and alkali metal salts thereof; and hydroxyethane diphosphonic acid and alkali metal salts thereof are preferably used from the viewpoint that they exhibit superior synergistic effects with the iodic acid-containing compound and can effectively remove antimony and arsenic.
  • the chelating agent may be used singly or in a combination of two or more types.
  • the amount of chelating agent added is 0.1 to 5 parts by weight, preferably 1 to 3 parts by weight, with respect to 100 parts by weight of the crude white phosphorus from the viewpoint that arsenic and antimony can be effectively removed from white phosphorus.
  • the amount of chelating agent added is lower than 0.1 parts by weight, removal effects of arsenic and antimony are reduced.
  • the amount of chelating agent added is higher than 5 parts by weight, it is not preferable in terms of increased treatment costs, although removal effects of arsenic and antimony are considered.
  • the iodic acid-containing compound and chelating agent are preferably used in a high-purity state in order to prevent incorporation of impurities derived from these reagents.
  • the aqueous solvent used for the preparation method is not particularly limited and should contain as few impurities as possible.
  • pure water obtained by allowing water to pass through at least a reverse osmosis membrane, an ultrafiltration membrane, an ion exchange membrane or the like to remove ionic impurities such as Na, K, Ca, Cl and SO 4 is particularly preferred in that incorporation of impurities derived from aqueous solvent can be prevented.
  • Examples of water which is passed through a reverse osmosis membrane, an ultrafiltration membrane or an ion exchange resin include water obtained by treating raw water such as industrial water, tap water and river water using an aggregation filter and a pre-treatment apparatus made of activated carbon to remove most suspended and organic substances in raw water, and water obtained by treating raw water with a pure water apparatus using an ion exchange resin.
  • a commercially available membrane module may be used as a reverse osmosis membrane.
  • operational conditions to prepare pure water using the module are in accordance with a common method without particular limitation.
  • the reverse osmosis membrane may generally have a fraction molecular weight of 400 to 100,000, preferably, 1000 to 10000, and specific examples of materials for membranes include cellulose acetate-based polymers, polyamide-based polymers, cross-linked polyamine-based polymers, cross-linked polyether-based polymers, polysulfone, sulfonated polysulfone, polyvinyl alcohol and the like. These polymers may be suitably selected.
  • the membrane may have any of flat, spiral, hollow fiber, tubular and pleat shapes.
  • a commercially available membrane module may be used as an ultrafiltration membrane.
  • operational conditions to prepare pure water using the module are in accordance with a common method without particular limitation.
  • the ultrafiltration membrane commonly has a fraction molecular weight of 400 to 100000, preferably 1000 to 10000 and specific examples of suitable materials for membrane include regenerated cellulose, polyether sulfone, polysulfone, polyacrylonitrile, polyvinyl alcohol, sintered metals, ceramics, carbon and the like.
  • the membrane may have any of flat, spiral, hollow fiber, tubular and pleats shapes.
  • the amount of aqueous solvent added in the present preparation method is not particularly limited, provided that a crude white phosphorus phase maintains water seal and the volume ratio of the crude white phosphorus phase and an aqueous phase (crude white phosphorus phase/aqueous phase) is 10/90 to 60/40, preferably 20/80 to 50/50.
  • aqueous solvent within the range defined above, crude white phosphorus can be efficiently brought into contact with the air without oxidation due to the contact.
  • the volume ratio of the crude white phosphorus phase and the aqueous phase is lower than 10/90, the amount of aqueous phase waste increases, thus being industrially disadvantageous.
  • a contact operation is carried out by a method such as 1) heating a crude solution containing crude white phosphorus, an aqueous solvent, an iodic acid-containing compound and a chelating agent to a crude white phosphorus liquefaction temperature or higher to form a liquid white phosphorus phase composed of crude white phosphorus and an aqueous phase composed of the iodic acid-containing compound and the chelating agent, and bringing these phases into contact under stirring, 2) heating a crude solution containing crude white phosphorus and an aqueous solvent to a crude white phosphorus liquefaction temperature or higher to form a liquid white phosphorus phase composed of crude white phosphorus and an aqueous phase, adding an iodic acid-containing compound and a chelating agent thereto, and bringing these ingredients into contact under stirring, 3) heating a crude solution containing crude white phosphorus, an aqueous solvent and an iodine-containing compound to a crude white phosphorus liquefaction temperature or
  • the temperature at which liquid crude white phosphorus comes into contact with the iodic acid-containing compound and the chelating agent is not particularly limited, provided that it allows crude white phosphorus to be present in a liquid state.
  • contact is generally carried out at a temperature of 50 to 90° C., preferably 50 to 60° C., arsenic and antimony can be more efficiently removed from liquid crude white phosphorus.
  • the pH of the aqueous phase at which contact treatment is operated is preferably within an acidic or neutral range. It is considered that arsenic contained in the crude white phosphorus phase is extracted as arsenious acid in an aqueous phase by the iodic acid-containing compound, and antimony is extracted as antimonious acid. These arsenious and antimonious acids may be stably present as an aqueous phase in an acidic or neutral range.
  • the aqueous phase is alkaline, since arsenious acid and antimonious acid are precipitated as hydrates and are incorporated into the white phosphorus phase again, and at the same time, a small amount of phosphine is disadvantageously produced when white phosphorus is heated in an alkaline range. Accordingly, it is preferred that the contact operation be carried out while maintaining the pH of the aqueous phase at 1 to 7. In addition, in accordance with the method, contact operation may be carried out while controlling the pH via addition of an acid such as phosphoric acid, if necessary.
  • the contact period of time is not critical in the present preparation method.
  • the contact operation is performed for generally 0.1 hours or more, particularly, 0.3 to 3 hours, satisfactory high-purity elemental phosphorus can be obtained.
  • a container used for such a contact operation is an airtight container and the atmosphere present therein is replaced with an inert gas, if necessary.
  • the white phosphorus phase and the aqueous phase are separated from each other by a common method, to recover the white phosphorus phase high-purity elemental phosphorus in which the amount of arsenic present therein is reduced to 100 ppm or less, preferably 50 ppm or less, particularly preferably, 30 ppm or less, and the amount of antimony present therein is reduced to 200 ppb or less, preferably 100 ppb or less, particularly preferably 20 ppb or less.
  • the high-purity white phosphorus obtained by the present preparation method may be used as a material for products requiring high purity such as phosphorus trichloride, phosphorus oxychloride or anhydrous phosphoric acid and is particularly suitable for use as a material for high-purity phosphoric acid used for silicon wafer etching for semiconductor applications.
  • the preparation method of high-purity phosphoric acid according to the present invention includes combusting the high-purity elemental phosphorus obtained above to produce phosphorus pentoxide gas and hydrating the gas.
  • High-purity elemental phosphorus and sufficient air to perfectly combust the elemental phosphorus are supplied to a flare tower 1 .
  • the combustion temperature is 800 to 2,000° C., preferably 900 to 2,000° C.
  • the phosphorus pentoxide obtained by combusting high-purity elemental phosphorus is discharged from the flare tower 1 together with exhaust gas and is supplied to a cooling tower 2 .
  • the exhaust gas comes into contact with water and is thus cooled, and at the same time, phosphorus pentoxide in the exhaust gas is dissolved in water, to obtain phosphoric acid.
  • the obtained phosphoric acid is cyclically used, instead of water, and make-water is supplied to the cooling tower 2 to adjust the concentration of phosphoric acid, since water is evaporated when contacting hot exhaust gas.
  • the phosphoric acid thus obtained is accumulated on the bottom of the cooling tower 2 , and is thus separated from exhaust gas and collected in an intermediate bath 3 .
  • Phosphoric acid collected in the intermediate bath 3 is extracted in an amount corresponding to the amount of phosphorus incorporated in the burning tower 1 .
  • the extracted phosphoric acid is filtered, as necessary, and stored in a phosphoric acid bath 4 .
  • the cooling tower 2 is for example a venturi-type cooling tower, a spray-type cooling tower or the like.
  • high-purity phosphoric acid wherein the content of arsenic is 100 ppm or less, preferably 50 ppm or less, particularly preferably 25 ppm or less, and the content of antimony is 200 ppb or less, preferably 50 ppb or less, particularly preferably 20 ppb or less, wherein the contents of arsenic and antimony are impurity amounts based on a conversion with respect to 85 wt % H 3 PO 4 .
  • excess hydrogen sulfide gas is blown into the obtained high-purity phosphoric acid, impurity metals contained in the high-purity phosphoric acid are precipitated as a sulfide, phosphoric acid is filtered, and the resulting phosphoric acid comes into contact with air in a removal tower, to remove hydrogen sulfide gas present in phosphoric acid (see Japanese Patent Publication No. 2009-114064).
  • high-purity phosphoric acid in which the content of arsenic and antimony is further reduced can be obtained.
  • the level of Sb in white phosphorus was assayed as follows. 0.5 to 1.5 g of cooled and solidified white phosphorus was decomposed by oxidation in 50 ml of concentrated nitric acid. After the decomposition, the resulting solution was massed up in a 250 ml measuring flask to obtain an analytical sample solution. The sample solution was suitably diluted and Sb contained therein was assayed by ICP-MS.
  • Example 2 Contact treatment was performed in the same manner as in Example 1, and an aqueous phase and a white phosphorus phase were separated from each other by a common method to recover the white phosphorus phase.
  • the recovered white phosphorus was combusted in a combustion furnace at 2,000° C. and the produced phosphorus pentoxide gas was hydrated in a cooling tower to obtain high-purity phosphoric acid containing 86 wt % H 3 PO 4 .
  • the present invention provides a method for preparing high-purity elemental phosphorus, capable of simultaneously removing both arsenic and antimony from crude white phosphorus containing a great amount of arsenic and antimony as impurities.
  • the present invention provides a method for industrially advantageously preparing high-purity phosphoric acid containing an extremely small amount of arsenic and antimony using high-purity elemental phosphorus as a raw material.

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CN103771364B (zh) * 2013-12-30 2015-10-28 广西利达磷化工有限公司 一种黄磷脱锑装置
CN103771366B (zh) * 2013-12-30 2016-06-08 广西利达磷化工有限公司 一种黄磷氧化除砷的方法
CN103771365B (zh) * 2013-12-30 2015-09-16 广西利达磷化工有限公司 一种黄磷脱锑的方法
KR101664625B1 (ko) 2014-12-24 2016-10-11 오씨아이 주식회사 황인의 정제방법
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CN112279230A (zh) * 2019-07-23 2021-01-29 东泰高科装备科技有限公司 磷酸的制备方法
KR20200067078A (ko) 2019-08-07 2020-06-11 정재억 마이크로버블을 이용한 인산 제조 설비
MY197864A (en) * 2020-01-29 2023-07-21 Rin Kagaku Kogyo Co Ltd Method for purifying yellow phosphorus and method for producing high-purity phosphoric acid
CN111517299A (zh) * 2020-06-23 2020-08-11 瓮福(集团)有限责任公司 一种工业磷酸深度净化脱砷的方法
CN113336207A (zh) * 2021-06-30 2021-09-03 昆明理工大学 黄磷与合成气的联合生产系统
CN113322101A (zh) * 2021-06-30 2021-08-31 昆明理工大学 黄磷与合成气联产的磷煤气化反应装置
KR20230114888A (ko) * 2022-01-26 2023-08-02 고미경 유골에서의 인 환원을 통해 얻은 촉매제를 활용한 유골분 결정체의 제조방법

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CN102336398A (zh) 2012-02-01
TWI487660B (zh) 2015-06-11
JP2012017230A (ja) 2012-01-26
US20120009112A1 (en) 2012-01-12
TW201202126A (en) 2012-01-16
KR20120005960A (ko) 2012-01-17
JP5554165B2 (ja) 2014-07-23
KR101795042B1 (ko) 2017-11-07

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