US8710547B2 - Avalanche photo diode and method of manufacturing the same - Google Patents

Avalanche photo diode and method of manufacturing the same Download PDF

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Publication number
US8710547B2
US8710547B2 US13/605,135 US201213605135A US8710547B2 US 8710547 B2 US8710547 B2 US 8710547B2 US 201213605135 A US201213605135 A US 201213605135A US 8710547 B2 US8710547 B2 US 8710547B2
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layer
region
photo diode
active region
avalanche photo
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US20130153962A1 (en
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Jae-Sik SIM
Kisoo Kim
Bongki Mheen
MyoungSook Oh
Yong-hwan Kwon
Eun Soo Nam
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Electronics and Telecommunications Research Institute ETRI
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Definitions

  • the inventive concept relates to photo diodes and methods of manufacturing the same and, more particularly, to avalanche photo diodes and methods of manufacturing the same
  • the photo detectors may detect light reflected or scattered from an object after the light is irradiated to the object.
  • the reflected or scattered light may be condensed by a spherical lens and then be detected in the photo detectors.
  • the light incident on the photo detector may be converted into an electric signal by a photo diode and then be transmitted to a photo receiver through an amplifier.
  • the photo diodes may be categorized into one of a PIN (p-type intrinsic n-type) photo diode and an avalanche photo diode (APD).
  • the PIN photo diode may have no internal gain, such that sensitivity of the PIN photo diode may be poor.
  • the avalanche photo diode may have more receiving sensitivity than the PIN photo diode.
  • the avalanche photo diode may have a complex structure.
  • the avalanche photo diode may have to be designed in planar type for securing reliability thereof. Limitation of the planar structure may cause badness of the avalanche photo diode. For example, edge breakdown may be caused by curvature of an active region in the avalanche photo diode. The edge breakdown may be partially suppressed by a guard ring region surrounding the active region.
  • the edge breakdown may not decrease by a dark current caused along a surface of a clad layer between the guard ring region and the active region.
  • Embodiments of the inventive concept may provide avalanche photo diodes capable of reducing or minimizing a dark current and methods of manufacturing the same.
  • Embodiments of the inventive concept may also provide avalanche photo diodes capable of increasing or maximizing receiving sensitivity by suppressing edge breakdown and methods of manufacturing the same.
  • an avalanche photo diode may include: a substrate; a light absorption layer formed on the substrate; a clad layer formed on the light absorption layer; an active region formed in the clad layer; a guard ring region formed around the active region; and an insulating region formed between the guard ring region and the active region.
  • the insulating region may include a gapfill layer filling a trench formed in the clad layer between the guard ring region and the active region.
  • the gapfill layer may have a depth substantially equal to a depth of the guard ring region in the clad layer.
  • the gapfill layer may include a silicon nitride layer.
  • the avalanche photo diode may further include: a passivation layer covering the gapfill layer and the guard ring region.
  • the passivation layer may include the same silicon nitride layer as the gapfill layer.
  • the active region and the guard ring region may be doped impurities of the same conductivity type.
  • the avalanche photo diode may further include: a top electrode formed on the active region; and a bottom electrode disposed on a back side of the substrate to expose a portion of the back side opposite to the top electrode.
  • the avalanche photo diode may further include: a grading layer formed between the light absorption layer and the clad layer; and a buffer layer formed between the grading layer and the clad layer.
  • the substrate, the buffer layer, and the clad layer may include indium-phosphorus; and the grading layer and the light absorption layer may include indium-gallium-arsenic-phosphorus.
  • the substrate, the light absorption layer, and the clad layer may be doped with impurities of a first conductivity type; and the active region and the guard ring region may be doped with impurities of a second conductivity type.
  • a center portion of the active region may have a thickness greater than that of an edge portion of the active region adjacent to the insulating region.
  • a method of manufacturing an avalanche photo diode may include: forming a light absorption layer and a clad layer on a substrate; forming an active region and a guard ring region in the clad layer; and forming an insulating region in the clad layer between the active region and the guard ring region.
  • forming the insulating region may include: forming a trench in the clad layer between the active region and the guard ring region; and filling an insulating layer in the trench.
  • filling the insulating layer may include: forming a passivation layer on the active region and the guard ring region.
  • forming the active region and the guard ring region may include: sequentially stacking a diffusion control layer and a dummy protection layer on the clad layer; removing portions of the dummy protection layer, the diffusion control layer, and the clad layer to form a recess; forming diffusion patterns in the recess and on the dummy protection layer spaced apart from the recess; and forming the active region and the guard ring region in the clad layer under the diffusion patterns.
  • the active region and the guard ring region may be formed by performing a thermal treatment process on the diffusion patterns.
  • the method may further include: forming a dummy capping layer on the diffusion patterns.
  • the method may further include: forming a grading layer and a buffer layer between the light absorption layer and the clad layer.
  • each of the grading layer, the buffer layer, and the clad layer may be formed by a metal-organic chemical vapor deposition (MOCVD) process or a molecular beam epitaxy (MBE) process.
  • MOCVD metal-organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • FIG. 1 is a plan view illustrating an avalanche photo diode according to embodiments of the inventive concept
  • FIG. 2 is a cross-sectional view taken along a line I-I′ of FIG. 1 ;
  • FIGS. 3 to 12 are cross-sectional views taken along a line I-I′ of FIG. 1 to explain a method of manufacturing an avalanche photo diode according to embodiments of the inventive concept.
  • inventive concept will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the inventive concept are shown.
  • inventive concept is not limited to the following exemplary embodiments, and may be implemented in various forms. Accordingly, the exemplary embodiments are provided only to disclose the inventive concept and let those skilled in the art know the category of the inventive concept.
  • embodiments of the inventive concept are not limited to the specific examples provided herein and are exaggerated for clarity.
  • exemplary embodiments are described herein with reference to cross-sectional illustrations and/or plane illustrations that are idealized exemplary illustrations. Accordingly, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, exemplary embodiments should not be construed as limited to the shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an etching region illustrated as a rectangle will, typically, have rounded or curved features. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of example embodiments.
  • FIG. 1 is a plan view illustrating an avalanche photo diode according to embodiments of the inventive concept.
  • FIG. 2 is a cross-sectional view taken along a line I-I′ of FIG. 1 .
  • an avalanche photo diode may include an insulating region 36 between an active region 30 and a guard ring region 32 .
  • the insulating region 36 may reduce or minimize a dark current induced along a top surface of a clad layer 18 between the active region 30 and the guard ring region 32 .
  • the insulating region 36 may increase gain in the active region 30 , so that edge breakdown may be suppressed.
  • the avalanche photo diode may increase or maximize receiving sensitivity by suppression of the edge breakdown.
  • Visible light may be incident into a light absorption layer 12 through a light receiving region 46 between bottom electrodes 44 disposed on a back side of a substrate 10 . Even though not shown in the drawings, the light may transmit a top electrode on a front side of the substrate 10 and then be incident into the light absorption layer 12 .
  • the substrate 10 may include single-crystalline n + -InP (n + -type indium-phosphorus).
  • a bottom buffer layer (not shown), the light absorption layer 12 , a grading layer 14 , a buffer layer 16 , the clad layer 18 , and a passivation layer 38 may be sequentially stacked on the substrate 10 .
  • the light absorption layer 12 and the grading layer 14 may include n-InGaAsP (n-type indium-gallium-arsenic-phosphorus).
  • the grading layer 14 may consist of a plurality of n-InGaAsP layers of which energy band gaps are different from each other.
  • the substrate 10 , the buffer layer 16 , and the clad layer 18 may include n-InP.
  • n-type may be defined as a first conductivity type and p-type may be defined as a second conductivity type.
  • the p + -InP active region 30 , the insulating region 36 , and the guard ring region 32 may be disposed in the clad layer 18 and be arranged in concentric circles.
  • the top electrode 42 may be in contact with the active region 30 and the bottom electrode 44 may be disposed under the substrate 10 .
  • the grading layer 14 may have at least one energy band gap between an energy band gap of the substrate 10 and an energy band gap of the light absorption layer 12 .
  • the n-InP buffer layer 16 may buffer an electric field.
  • the n-InP buffer layer 16 may have an impurity concentration within a range of about 2.0 ⁇ 10 17 /cm 3 to about 4.5 ⁇ 10 17 /cm 3 .
  • the n-InP clad layer 18 may have a thickness within a range of about 3.0 ⁇ m to 4.5 ⁇ m.
  • the light absorption layer 12 may generate electron-hole pairs (EHP) by the visible light. Electrons and the holes of the EHPs generated from the light absorption layer 12 may be separated by a great electric field. The separated holes may be rapidly injected into the clad layer 18 through the grading layer 14 , and the separated electrons may be outputted through the lower electrode 44 . The holes inputted into the clad layer 18 may be accelerated by a great electric field in the clad layer 18 . The accelerated holes may impact lattices to ionize atoms in the clad layer 18 . Thus, additional holes are generated. In other words, the holes may be additionally generated by the great electric field of the clad layer 18 , such that a light current may be amplified. Thus, the avalanche photo diode according to embodiments of the inventive concept may internally amplify the electric signal converted by the incident light. Thus, it is possible to output the electric signal of which a signal to noise ratio (SNR) is high.
  • SNR
  • the guard ring region 32 having the same conductivity type as the active region 30 may be disposed in the clad layer 18 .
  • the guard ring region 32 may have a ring-shape surrounding the active region 30 and spaced apart from the active region 30 in a plan view.
  • the guard ring region 32 may be electrically separated from the active region 30 .
  • the guard ring region 32 may prevent avalanche breakdown phenomenon from first occurring at an edge portion of a PN junction by a focused electric field as compared with a center portion of the PN junction.
  • the avalanche breakdown phenomenon at the edge portion may be defined as an edge breakdown.
  • a center portion of the active region 30 may be deeper than an edge portion of the active region 30 in the clad layer 18 . In other words, a thickness of the center portion of the active region 30 may be greater than a thickness of the edge portion of the active region 30 .
  • the insulating region 36 may reduce or minimize a dark current induced along the top surface of the clad layer 18 between the active region 30 and the guard ring region 32 .
  • the insulating region 36 may include the same silicon nitride layer as the passivation layer 38 .
  • a portion of the top surface of the clad layer 18 between the active region 30 and the guard ring region 32 may be depressed by a trench ( 34 of FIG. 9 ) of the insulating region 36 .
  • the insulating region 36 may increase an effective distance of the top surface of the clad layer 18 . In other words, the insulating region 36 may increase the effective distance of the clad layer 18 between the active region 30 and the guard ring region 32 , such that the edge breakdown may be suppressed.
  • the avalanche photo diode may increase or maximize receiving sensitivity by suppressing the edge breakdown.
  • FIGS. 3 to 12 are cross-sectional views taken along a line I-I′ of FIG. 1 to explain a method of manufacturing an avalanche photo diode according to embodiments of the inventive concept.
  • a bottom buffer layer (not shown), a light absorption layer 12 , a grading layer 14 , a buffer layer 16 , a clad layer 18 , and a diffusion control layer 20 may be sequentially formed on a substrate 10 .
  • Each of the layers 12 , 14 , 16 , 18 , and 20 may be formed by a metal-organic chemical vapor deposition (MOCVD) process or a molecular beam epitaxy (MBE) process.
  • the light absorption layer 12 may include n-InP.
  • the grading layer 14 may include a plurality of n-InP layers having energy band gaps between the energy band gap of the grading layer 14 and the energy band gap of the light absorption layer 12 .
  • the buffer layer 16 may have an impurity concentration within a range of about 2.0 ⁇ 10 17 /cm 3 to about 4.5 ⁇ 10 17 /cm 3 .
  • the clad layer 18 may have a thickness within a range of about 3.0 ⁇ m to 4.5 ⁇ m.
  • a dummy protection layer 22 may be formed on the diffusion control layer 20 .
  • the dummy protection layer 22 may include an insulating layer such as a silicon nitride (SiN x ) layer formed by a chemical vapor deposition (CVD) method.
  • SiN x silicon nitride
  • CVD chemical vapor deposition
  • the dummy protection layer 22 , the diffusion control layer 20 , and the clad layer 18 may be patterned to form a first recess 24 .
  • a bottom and sidewalls of the first recess 24 may expose the clad layer 18 .
  • the first recess 24 may have an etch depth within a range of about 100 nm to 500 nm from a top surface of the clad layer 18 .
  • a depth of a PN junction surface may be controlled by the depth of the first recess 24 .
  • diffusion patterns 26 are formed in the first recess 24 and around the first recess 24 and then a dummy capping layer 28 is formed on the diffusion patterns 26 .
  • the diffusion patterns 26 may include at least one metal of zinc (Zn) and cadmium (Cd).
  • the diffusion patterns 26 may be formed by a metal deposition process, a photolithography process, and an etching process.
  • a first diffusion pattern 25 may be formed on the bottom and sidewalls of the first recess 24 .
  • a second diffusion pattern 27 may be formed on the dummy protection layer 22 around the first diffusion pattern 25 .
  • the second diffusion pattern 27 may penetrate the dummy protection layer 22 and then be in contact with the diffusion control layer 20 .
  • the dummy capping layer 28 may include a silicon oxide layer formed by a CVD method.
  • metal atoms of the diffusion patterns 26 may be diffused into the clad layer 18 by a first thermal treatment process, thereby forming an active region 30 and a guard ring region 32 .
  • the first thermal treating process may be performed at a temperature within a range of about 400 degrees Celsius to about 550 degrees Celsius for a process time within a range of about 10 minutes to about 30 minutes.
  • the metal atoms of the diffusion patterns 26 are p-type impurities and are diffused into the n-InP clad layer 18 .
  • the active region 30 may include p + -InP formed by metal atoms of the first diffusion pattern 25 diffused through the bottom and sidewalls of the first recess 24 .
  • the guard ring region 22 may be formed by diffused metal atoms of the second diffusion pattern 27 .
  • the guard ring region 22 may include p-InP. Sizes and depths of a center portion and an edge portion of the active region may be variously controlled according to a size, a thickness, a position of an impurity diffusion region for the formation of the active region 30 . In some embodiments, depths of a center portion and an edge portion of the first recess 24 may be different from each other. Thus, diffusion depths of the metal atoms may be different from each other when the active region 30 is formed.
  • the center portion of the active region 30 may be closer to the buffer layer 16 than the edge portion of the active region 30 .
  • the guard ring region 32 may be formed to have a depth substantially equal to the depth of the edge portion of the active region 30 .
  • the dummy capping layer 28 , the diffusion patterns 26 , the dummy protection layer 22 , and the diffusion control layer 20 may be removed.
  • the dummy capping layer 28 , the diffusion patterns 26 , the dummy protection layer 22 , and the diffusion control layer 20 may be removed by a wet etching process using an acidic solution.
  • a second thermal treatment process may be performed to stabilize the metal atoms in the active region 30 and the guard ring region 32 .
  • the second thermal treatment process may be performed at a temperature within a range of about 400 degrees Celsius to about 550 degrees Celsius for a process time within a range of about 10 minutes to about 30 minutes.
  • a portion of the clad layer 18 between the active region 30 and the guard ring region 32 may be removed to form a trench 34 .
  • the trench 34 may be formed by a photolithography process and an etching process.
  • the trench 34 may be formed in the clad layer 18 to have a depth substantially equal to the depth of the guard ring region 32 .
  • a bottom of the trench 34 may be formed to be rounded toward a bottom of the clad layer 18 .
  • a gapfill layer 36 is formed in the trench 34 and a passivation layer 38 is formed on the clad layer 18 .
  • the gapfill layer 36 and the passivation layer 38 may include a silicon nitride (SiN x ) layer formed by a CVD method.
  • the passivation layer 38 may be planarized by a chemical mechanical polishing (CMP) method.
  • the gapfill layer 36 and the passivation layer 38 may include a silicon oxide layer and a silicon nitride layer, respectively.
  • a silicon oxide layer may be formed on the substrate 10 and then the silicon oxide layer may be planarized until the clad layer 18 is exposed.
  • the gapfill layer 36 may confinedly formed in the trench 34 .
  • the passivation layer 38 may be flat formed on the clad layer 18 and the gapfill layer 36 .
  • the passivation layer 38 may function as a reflection preventing layer which prevents the reflection of the light inputted from the outside of the avalanche photo diode.
  • the passivation layer 38 on the active region 30 is removed to form a second recess 40 .
  • the second recess 40 may be a contact region exposing the active region 30 from the passivation layer 38 .
  • a top electrode 42 is formed to be connected to the active region 30 through the second recess 40 .
  • Bottom electrodes 44 are formed to be connected to the substrate 10 .
  • the top electrode 42 and the bottom electrodes 44 may include metal such as Zn—Au alloy, Au, or Ti/Pt/Au alloy.
  • the top electrode 42 may be formed on the active region 30 by a metal deposition process, a photolithography process, and an etching process.
  • the bottom electrodes 44 may expose a light receiving region 46 under the active region 30 and the substrate 10 .
  • the insulating region 36 filled with the insulating layer may be formed in the clad layer 18 between the active region 30 and the guard ring region 32 by the method of manufacturing the avalanche photo diode according to embodiments of the inventive concept.
  • the insulating region may be disposed in the clad layer between the active region and the guard ring region.
  • the insulating region may reduce or minimize the dark current induced along the top surface of the clad layer between the active region and the guard ring region. Additionally, the insulating region may suppress the edge breakdown.
  • the avalanche photo diode may increase or maximize the receiving sensitivity.

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KR20180119203A (ko) * 2017-04-24 2018-11-02 한국전자통신연구원 광 검출 소자
KR102443215B1 (ko) * 2020-01-02 2022-09-14 주식회사 피앤엘세미 포토 다이오드 및 이를 포함하는 표면 실장 부품 패키지
US11251219B2 (en) * 2020-03-10 2022-02-15 Sensors Unlimited, Inc. Low capacitance photo detectors
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KR102653478B1 (ko) * 2022-10-06 2024-04-01 주식회사 트루픽셀 단일 광자 검출 소자, 전자 장치, 및 라이다 장치
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