US8003995B2 - Semiconductor optical device with suppressed double injection phenomenon - Google Patents

Semiconductor optical device with suppressed double injection phenomenon Download PDF

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US8003995B2
US8003995B2 US12/230,170 US23017008A US8003995B2 US 8003995 B2 US8003995 B2 US 8003995B2 US 23017008 A US23017008 A US 23017008A US 8003995 B2 US8003995 B2 US 8003995B2
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tunnel junction
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cladding layer
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Michio Murata
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Sumitomo Electric Industries Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Definitions

  • the present invention relates to a semiconductor optical device, in particular, the invention relates to a device that suppresses, what is called, the double injection phenomenon.
  • FIG. 5 illustrates a typical light-emitting device applicable in the optical communication system.
  • the device 100 shown in FIG. 5 comprises, on an InP substrate 102 , an n-type InP cladding layer 104 , an InGaAsP active layer 106 , a p-type InP cladding layer 108 , and a p-type GaInAs contact layer 110 , where the layer configuration is called as the double hetero (DH) structure.
  • These semiconductor layers constitutes a mesa 112 extending along the primary surface of the substrate 102 , and a semi-insulating InP 114 doped with iron (Fe) buries the mesa 112 in both sides thereof.
  • On the InP 114 is formed with an insulating film 16 .
  • the electrode 118 comes in contact with the contact layer 110 within an opening 116 a of the insulating film 116 , while, the other electrode 120 is formed on the whole back surface of the InP substrate 102 .
  • Various prior arts such as Japanese Patent application published as H05-183229A, have disclosed such a light emitting device.
  • the burying region 114 generally dopes iron (Fe) or ruthenium (Ru), which causes deep acceptor levels, and region 114 shows the semi-insulating characteristic by trapping electrons in these deep acceptor.
  • Fe iron
  • Ru ruthenium
  • region 114 shows the semi-insulating characteristic by trapping electrons in these deep acceptor.
  • LD laser diode
  • this p-type InP cladding layer 108 has substantial thickness to confine the light generating in the active layer 106 , where the prior art mentioned above has a thickness of 1.5 ⁇ m for the p-type cladding layer, the contact area between the burying region 114 and the p-type cladding layer 108 becomes broader; accordingly, holes in the p-type cladding layer 108 easily diffuses into the burying region 114 . Holes in the burying region 114 may recombine with the electrons trapped in the deep acceptors, which makes the acceptor levels vacant; and the electrons in the n-type cladding layer 104 moves into the burying region 114 and be trapped by vacant deep acceptors.
  • the prior art mentioned above forms an n-type layer between the p-type cladding layer 108 and the semi-insulating burying region 114 to trap holes from the p-type cladding layer 108 .
  • this n-type layer comes in contact with the n-type cladding layer or the n-type substrate, electrons may flow in this n-type layer to the n-type cladding layer and the n-type substrate so as to bypass the active layer, which also increases the leak current and degrades the emission efficiency.
  • such an n-type layer must be restricted in just sides of the p-type cladding layer, but the process to form such an n-type layer becomes quite hard.
  • a semiconductor optical device of the present invention has a feature that the device comprises an n-type semiconductor substrate, a mesa formed on the n-type substrate and a burying region that is doped with impurities causing a deep acceptor levels to trap electrons.
  • the burying region is formed so as to bury the mesa.
  • the mesa includes, on the n-type substrate, the first cladding layer with the n-type conduction, the active layer, the tunnel junction layer and the second cladding layer with the n-type conduction.
  • the tunnel junction layer includes a p-type layer and an n-type layer stacked on the active layer in this order.
  • the n-type layer has a carrier concentration higher than a carrier concentration of the second cladding layer.
  • the semiconductor optical device of the invention comprises the first and second cladding layers putting the active layer therebetween and each having the n-type conduction. Between the second cladding layer and the active layer is provided with the tunnel junction layer including the n-type layer and the p-type layer. When the optical device is biased so as to be positive in the second cladding layer with respect to the n-type substrate, the tunnel junction layer may generate the holes that are injected into the active layer and are recombined with electrons injected from the first cladding layer. Thus, the optical device of the invention may generate light even the first and second cladding layers are both n-type conduction.
  • the second cladding layer with the n-type conduction may effectively suppress the hole injection into the burying region, which drastically reduces the double injection phenomenon. Because the thickness of the p-type layer in the tunnel junction layer is far less than a thickness of the second cladding layer with the p-type conduction in the conventional device, the lead current due to the double injection from this p-type layer into the burying region may become extremely small.
  • the optical device of the invention has no structures to protect or cover the sides of the mesa, which is often provided in conventional devices to prevent the double injection phenomenon; accordingly, the optical device may be obtained by a quite simplified process.
  • the p-type layer in the tunnel junction layer may be AlGaInAs or AlAs each doped with carbon (C) whose band gap wavelength less than a band gap wavelength of the second cladding layer and have a thickness of 10 to 20 nm.
  • the p-type layer may further have a doping concentration higher than the doping concentration of the second cladding layer.
  • FIG. 1 is a perspective view of a semiconductor laser diode as an example of the present invention
  • FIG. 2 is a cross section of the laser diode taken along the line II-II shown in FIG. 1 ;
  • FIG. 3A illustrates the first process to form the laser diode
  • FIG. 3B shows the second process subsequent to that shown in FIG. 3A ;
  • FIGS. 4A to 4C each illustrates the process of the laser diode subsequent to that shown in FIG. 3B ;
  • FIG. 5 is a cross section of a conventional optical device.
  • FIG. 1 is a perspective view of a semiconductor laser diode (LD) 10 according to one embodiment of the present invention
  • FIG. 2 is a cross section of the LD 10 taken along the lint II-II shown in FIG. 1 .
  • the cross section shown in FIG. 2 is orthogonal to the direction of the light transmission.
  • the LD 10 includes a substrate 12 , a mesa 14 , and a burying region 16 .
  • the substrate 12 is made of n-type InP.
  • the mesa 14 formed on the primary surface 12 a of the substrate 12 , extends along the light transmitting direction.
  • the mesa 14 includes a portion 18 b of a first cladding layer 18 , an active layer 20 , a tunnel junction layer 22 , a second cladding layer 24 , and an n-type contact layer 26 .
  • the mesa 14 has a width W of about 1.5 ⁇ m.
  • the first cladding layer 18 is made of n-type semiconductor material, for instance, the n-type InP doped with n-type impurities, such as silicon (Si), by a concentration of about 1 ⁇ 10 18 cm ⁇ 3 and has a thickness of about 0.5 ⁇ m.
  • the first cladding layer 18 comprises a first portion 18 a formed on a whole primary surface 12 a of the InP substrate 12 and a second portion 18 b formed on the first portion 18 a and is involved within the mesa 14 .
  • the second cladding layer 24 which is also made of n-type semiconductor material, puts the active layer 20 and the tunnel junction layer 22 between the first cladding layer 18 .
  • the second cladding layer 24 may be an n-type InP doped with Si by a concentration of about 1 ⁇ 10 18 cm ⁇ 3 and has a thickness of about 2.0 ⁇ m.
  • the active layer 20 may be also made of semiconductor material involved in the InP system.
  • the InP system means that the compound semiconductor material has a lattice constant matched with or substantially matched with that of InP.
  • the active layer 20 may be a bulk layer, the single quantum well layer (SQW) or the multiple quantum well layers (MQW), in particular, the active layer 20 is preferable to be the stress induced MQW.
  • the active layer 20 includes a plurality of well layers made of GaInAsP and a plurality of barrier layers made of GaInAsP with a composition different from that of the well layer. The barrier layers and the well layers are alternately stacked to each other.
  • the emission wavelength of the active layer 20 which corresponds to the band gap wavelength of the active layer, comes between 1.3 to 1.5 ⁇ m. Because the refractive index of the active layer 20 is greater than that of the first and second cladding layers, 18 and 24 , these three layers, 18 , 20 and 24 , forms an optical waveguide.
  • the tunnel junction layer 22 is made of material involved in the InP system and has an n-type layer 22 a and a p-type layer 22 b.
  • the n-type layer 22 a comes in contact with the second cladding layer 24 .
  • This n-type layer 22 a dopes the n-type impurities such as Si by a concentration higher than that of the first cladding layer 18 and the second cladding layer 24 .
  • the n-type layer 22 a is GaInAsP doped with Si by a concentration of about 1 ⁇ 10 19 cm ⁇ 3 and has a thickness of 10 to 20 nm.
  • the band gap wavelength of the n-type layer 22 a may be larger than that of the second cladding layer 24 , but preferably less than that of the emission wavelength of the LD 10 , which is substantially equal to the band gap wavelength of the active layer 20 , which effectively suppress the absorption of the light generated in the active layer 20 by this n-type layer 22 a .
  • the band gap wavelength of the n-type layer 22 a is 1.25 ⁇ m.
  • the p-type layer 22 b which is put between the active layer 20 and the n-type layer 22 a , is doped with p-type impurities such as carbon (C) by a concentration higher than the doping concentration of the n-type impurities in the first cladding layer 18 and in the second cladding layer 24 .
  • the p-type layer 22 b may be carbon doped AlGaInAs or carbon doped AlAs by a concentration of, for instance, 1 ⁇ 10 19 cm ⁇ 3 and having the band gap wavelength less than that of the second cladding layer 24 , which may be made of InP.
  • the thickness of the p-type layer 22 b may be 10 to 20 nm and the band gap wavelength thereof may be, for instance, 0.8 ⁇ m.
  • the p-type impurities doped in the p-type layer 22 b is not restricted to carbon (C).
  • Zinc (Zn) or other impurities showing the p-type conduction may be applicable.
  • the Zn atoms tend to inter-diffuse with impurities, for instance irons (Fe), doped in the burying region 16 .
  • This inter-diffusion may be suppressed by selecting the carbon as the p-type dopant in the p-type layer 22 b .
  • the carbon (C) effectively becomes the p-type dopant in semiconductor materials containing arsenic (As) such as AlGaInAs and AlAs.
  • the contact layer 26 may be made of materials involved in the InP system and doped with n-type dopants such as Si.
  • the contact layer 26 may be GaInAs doped with Si by a concentration of about 1 ⁇ 10 19 cm ⁇ 3 , and has a thickness of about 0.5 ⁇ m.
  • the contact layer 26 shows the non-rectifier contact with respect to the electrode 30 .
  • the burying region 16 which is the insulating region arranged on the primary surface 12 a of the InP substrate 12 so as to bury the mesa 14 , comes in contact with respective layers in the mesa 14 .
  • the burying region 16 may be made of InP doped with iron (Fe) or ruthenium (Ru), which causes the deep acceptor levels to trap electrons.
  • Fe iron
  • Ru ruthenium
  • the burying region 16 shows the semi-insulating characteristic to concentrate carriers provided in the LD 10 from the electrodes, 30 and 34 , within the mesa 14 effectively.
  • the dopant in the burying region 16 is not restricted to Fe or Ru, any impurities causing the deep traps may be applicable as the dopant in the burying region 16 .
  • the insulating film 28 that may be made of inorganic material containing Si, such as silicon die-oxide (SiO 2 ).
  • This insulating film 28 provides an opening 28 a aligned with the mesa 14 .
  • the LD 10 further provides the electrode 30 whose position is aligned with the mesa 14 .
  • the electrode 30 may be, for instance, a stacked metal of titanium (Ti), platinum (Pt) and gold (Au), and may be electrically coupled with the mesa 14 by coming in non-rectified contact with the contact layer 26 .
  • the electrode 30 is also connected with the pad 32 on the insulating film 28 , which is shown in FIG. 1 .
  • An interconnection such as bonding wire is attached to the pad 32 to secure the electrical connection with the external circuit.
  • the LD 10 provides another electrode 34 in the whole back surface 12 b of the substrate 12 .
  • This electrode 34 may be made of eutectic metal of AuGe covered with gold (Au) to make the non-rectified contact with the InP substrate 12 .
  • FIGS. 3 and 4 are the cross section to show the process and corresponds to FIG. 2 .
  • the n-type InP substrate is firstly prepared. On the primary surface 12 a of the substrate 12 is grown with an n-type InP film 40 for the first cladding layer 18 , a multiple stacked films 42 for the active layer 20 including GaInAsP film for the well layers and another GaInAsP film with a different composition for the barrier layers, a p-type AlGaInAs film 44 for the p-type layer 22 b of the tunnel junction layer 22 , an n-type GaInAsP film 46 for the n-type layer 22 a of the tunnel junction layer 22 , an n-type InP film 48 for the second cladding layer 24 , and an n-type GaInAs film 50 for the contact layer 26 , as illustrated in FIG.
  • the metal organic chemical vapor deposition (MOCVD) technique may epitaxially grow these films, 40 to 50 .
  • the n-type films, 40 , 46 , 48 and 50 may be doped with silicon (Si) by using silane (SiH 4 ) as a source gas, while, the p-type film 44 may be doped with carbon (C) by using carbon bromide (CBr 4 ) as a source gas.
  • the mask M may be made of inorganic material such as silicon die-oxide (SiO 2 ) and has a width of, orthogonal to the transmitting direction, about 1.5 ⁇ m.
  • the dry etching technique such as the reactive ion etching (RIE), may remove a portion of the films, 40 to 50 , not covered with the mask M, as shown in FIG. 3B .
  • the etching may be stopped before the n-type InP substrate 12 exposes, that is, the etching is stopped in the halfway of the n-type InP film 40 , which forms the first cladding layer 18 including the first portion 18 a and the second portion 18 b , and the mesa 14 including the second portion 18 b , the active layer 20 , the tunnel junction layer 22 , which includes the n-type 22 a and p-type 22 b layers, the second cladding layer 24 and the contact layer 26 .
  • An iron-doped InP or a ruthenium-doped InP may be epitaxially grown by the MOCVD technique to form the burying region 16 ( FIG. 4A ).
  • the iron-doped InP may be grown by using ferrocene (C 10 H 10 Fe) as a dopant gas.
  • the process forms the insulating film 28 with the opening 28 a as illustrated in FIG. 4B . That is, removing the mask M shown in FIG. 4A , the insulating film 28 made of inorganic material of silicon die-oxide (SiO 2 ) is formed on the mesa 14 and on the burying region 16 . Etching a portion of the insulating film 28 to form the opening 28 a on the mesa 14 , the contact layer 26 is exposed within the opening 28 a .
  • the stacked meal 30 made of Ti/Pt/Au and another metal 34 made of AuGe/Ni are formed on top and back surfaces of the device, respectively, as illustrate in FIG. 4C . Finally, cleaving thus processed device at a surface orthogonal to the longitudinal direction of the mesa 14 , the LD 10 shown in FIGS. 1 and 2 may be completed.
  • the active layer 20 may effectively bring the ability to generate light even the first and the second cladding layers, 18 and 24 , are both n-type conduction.
  • the second cladding layer 24 is then-type conduction, which is a feature of the present device and may be explicitly distinguished from the conventional configuration shown in FIG. 5 , the hole injection cannot occur from the second cladding layer 24 to the burying region 16 .
  • the thickness of the p-type layer 22 b in the tunnel junction layer 22 may be thin enough, which is 10 to 20 nm in the embodiment explained above, compared with the conventional second cladding layer 24 whose thickness is typically around 2.0 ⁇ m; accordingly, the leak current due to the double injection between the p-type layer 22 b and the burying region 16 may become far small compared with the conventional device providing the p-type cladding layer.
  • the LD 10 of the present embodiment may be processed such that a stack of films, 40 to 50 , are firstly grown, a mesa 14 is formed by the etching, and the burying region 16 is finally formed so as to bury the mesa 14 . Accordingly, the LD 10 may be easily processed compared to the conventional device that provides the additional structure in both sides of the mesa to prevent the hole injection from the p-type cladding layer into the burying region.
  • the invention may be applicable to the semiconductor modulator, the semiconductor device integrating the laser diode with the modulator, or the semiconductor multiplexer/de-multiplexer.
  • the invention may further provide another p-type layer between the active layer and the tunnel junction layer.
  • the additional p-type layer may have a thickness enough thinner than that of the conventional p-type cladding layer to reduce the leak current by the double injection phenomenon.
  • Such an additional p-type layer may have a refractive index so as to compensate the asymmetry of the distribution of the refractive index due to the existing of the tunnel junction layer.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140355637A1 (en) * 2013-05-31 2014-12-04 Sumitomo Electric Industries, Ltd. Quantum cascade laser
US20140355634A1 (en) * 2013-05-31 2014-12-04 Sumitomo Electric Industries, Ltd. Quantum cascade laser
CN104466677A (zh) * 2013-09-20 2015-03-25 瑞萨电子株式会社 制造半导体器件的方法及半导体器件
US20200243709A1 (en) * 2017-10-10 2020-07-30 Osram Oled Gmbh Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5093063B2 (ja) * 2008-11-11 2012-12-05 住友電気工業株式会社 集積化半導体光素子及び半導体光装置
JP5310271B2 (ja) * 2009-05-29 2013-10-09 住友電気工業株式会社 半導体レーザ素子
US10811845B2 (en) * 2012-02-28 2020-10-20 Thorlabs Quantum Electronics, Inc. Surface emitting multiwavelength distributed-feedback concentric ring lasers
JP2016092175A (ja) * 2014-11-04 2016-05-23 三菱電機株式会社 半導体光素子
JP7306779B2 (ja) 2019-09-13 2023-07-11 住友電工デバイス・イノベーション株式会社 光半導体素子およびその製造方法
JP7309920B2 (ja) * 2020-02-19 2023-07-18 天津三安光電有限公司 多接合ｌｅｄのトンネル接合、多接合ｌｅｄ、及びその製作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183229A (ja) 1991-12-27 1993-07-23 Fujitsu Ltd 半導体発光装置及びその製造方法
US20050083979A1 (en) * 2003-10-17 2005-04-21 Leary Michael H. Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant
US20050253164A1 (en) * 2004-05-17 2005-11-17 Rajaram Bhat Tunnel junctions for long-wavelength vcsels

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168842A (ja) * 2001-11-30 2003-06-13 Furukawa Electric Co Ltd:The 波長可変分布帰還型レーザ素子及び波長可変分布帰還型レーザ集積装置
US6724013B2 (en) * 2001-12-21 2004-04-20 Xerox Corporation Edge-emitting nitride-based laser diode with p-n tunnel junction current injection
US7638792B2 (en) * 2005-03-23 2009-12-29 Nec Corporation Tunnel junction light emitting device
JP2007189080A (ja) * 2006-01-13 2007-07-26 Fujitsu Ltd 光半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183229A (ja) 1991-12-27 1993-07-23 Fujitsu Ltd 半導体発光装置及びその製造方法
US20050083979A1 (en) * 2003-10-17 2005-04-21 Leary Michael H. Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant
US20050253164A1 (en) * 2004-05-17 2005-11-17 Rajaram Bhat Tunnel junctions for long-wavelength vcsels

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
N. Nishiyama et al, "High efficiency long wavelength VCSEL on InP grown by MOCVD", Electronics Letters, Mar. 6, 2003, vol. 39, No. 5.
Ortsiefer et al. "Low-resistance InGa(AI)As Tunnel Junctions for . . . Lasers", Jpn. J. Appl. Phys., vol. 39, 2000, pp. 1727-1729.
Sekiguchi et al., "Long wavelength GaInAsP/InP Laser . . . Junction", Jpn. J. Appl. Phys., vol. 38, 1999, pp. L443-445.

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140355637A1 (en) * 2013-05-31 2014-12-04 Sumitomo Electric Industries, Ltd. Quantum cascade laser
US20140355634A1 (en) * 2013-05-31 2014-12-04 Sumitomo Electric Industries, Ltd. Quantum cascade laser
US9240675B2 (en) * 2013-05-31 2016-01-19 Sumitomo Electric Industries, Ltd. Quantum cascade laser
US9246308B2 (en) * 2013-05-31 2016-01-26 Sumitomo Electric Industries, Ltd. Quantum cascade laser
CN104466677A (zh) * 2013-09-20 2015-03-25 瑞萨电子株式会社 制造半导体器件的方法及半导体器件
US20200243709A1 (en) * 2017-10-10 2020-07-30 Osram Oled Gmbh Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip

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