US7675098B2 - Reflection type CMOS image sensor and method of manufacturing the same - Google Patents

Reflection type CMOS image sensor and method of manufacturing the same Download PDF

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Publication number
US7675098B2
US7675098B2 US11/849,732 US84973207A US7675098B2 US 7675098 B2 US7675098 B2 US 7675098B2 US 84973207 A US84973207 A US 84973207A US 7675098 B2 US7675098 B2 US 7675098B2
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photodiode
semiconductor substrate
substrate
light reception
photodiodes
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US20080061329A1 (en
Inventor
Jeong Su Park
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DB HiTek Co Ltd
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Dongbu HitekCo Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/1013—Devices sensitive to infrared, visible or ultraviolet radiation devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices

Definitions

  • An image sensor is a semiconductor device used to convert optical images detected by the image sensor to electric signals.
  • Image sensors may be classified as a charge coupled device (CCD) and a complementary metal oxide semiconductor (CMOS).
  • CCD charge coupled device
  • CMOS complementary metal oxide semiconductor
  • a CMOS image sensor is provided with a plurality of MOS transistors corresponding to pixels of a semiconductor device having a control circuit and a signal processing circuit as peripheral circuits.
  • the control circuit and the signal processing unit may be integrated together to employ a switching method that detects output through the MOS transistors.
  • a CMOS image sensor may be provided with a plurality of unit pixels whereby each unit pixel includes one light sensing device such as a photodiode and a plurality of MOS transistors.
  • a CMOS image sensor includes a plurality of photodiodes 22 , 24 and 26 formed on and/or over silicon substrate 10 by repeatedly performing ion implantation and a silicon epitaxial growth process.
  • Photodiodes 22 , 24 and 26 are configured to detect red light, green light and blue light.
  • An ion implantation layer for red photodiode 22 can be formed in substrate 10 and first silicon epitaxial layer 12 can be formed thereon and/or thereover.
  • Green photodiode 24 can be formed in first epitaxial layer 12 using an ion implantation process.
  • Plug 42 for contacting red photodiode 22 can be formed in a portion of first epitaxial layer 12 .
  • second silicon epitaxial layer 14 is formed and blue photodiode 26 is formed in second silicon epitaxial layer 14 .
  • Plug 46 for contacting green photodiode 24 and plug 44 for contacting red photodiode 22 can be formed.
  • the plurality of MOS transistors for transferring optical charges detected by photodiodes 22 , 24 and 26 can be formed on and/or over second silicon epitaxial layer 14 .
  • Each of the plurality of MOS transistors may include gate 30 , gate insulating film 32 , and spacer 34 .
  • red photodiode 22 and green photodiode 24 are larger than blue photodiode 26 , and the transistors for delivering signals are arranged on an uppermost layer, only the size of blue photodiode 26 becomes a substantial light reception area. Consequently, the substantial light reception area can be smaller than that of the photodiodes.
  • Plugs 42 , 44 and 46 for processing the signal of red photodiode 22 or green photodiode 24 can be formed by the ion implantation process. However, if light is irradiated, noise may be generated in the signal due to the plugs.
  • Photodiodes 22 , 24 and 26 may be separately formed in order to prevent interference between them.
  • An additional ion implantation layer for isolating photodiodes 22 , 24 and 26 can be formed in each epitaxial layer 12 and 14 .
  • Embodiments relate to a reflective-type CMOS image sensor having a structure having enhanced light reflectivity.
  • Embodiments relate to a CMOS image sensor which may include a semiconductor substrate having a groove portion with an inclined surface and a light reception surface substantially perpendicular to the semiconductor substrate, and a transistor forming area defined at one side of the light reception surface of the inclined groove portion; a reflection film that can be selectively formed on the inclined surface of the inclined groove portion; a plurality of photodiodes substantially perpendicular to the surface of the substrate and spaced apart from each other in the transistor forming area; and at least one MOS transistor formed on and/or over the surface of the transistor forming area.
  • Example FIG. 1 illustrates a CMOS image sensor.
  • FIGS. 2A to 2D illustrate a method of manufacturing the CMOS image sensor, in accordance with embodiments.
  • a CMOS image sensor includes silicon semiconductor substrate 100 having at least one groove A.
  • Groove A may be formed of two separate surface areas: inclined surface 220 and light reception surface 240 .
  • Device forming area B defined at an upper surface of substrate 100 and adjacent to light reception surface 240 of inclined groove A.
  • Inclined surface 220 may be configured such that it extends substantially at an incline relative to the surface of substrate 100 .
  • Reflection film 260 can be selectively formed on and/or over inclined surface 220 .
  • Reflection film 260 can be formed of a metal film which reflects visible light.
  • inclined surface 220 may have an angle of approximately 45 degrees with respect to the surface of the substrate such that the light reflected from reflection film 260 is directed towards light reception surface 240 .
  • Light reception surface 240 may be configured such that it extends substantially perpendicular to the surface of substrate 100 .
  • a plurality of photodiodes 320 , 340 and 360 may be provided on and/or over device forming area B. Photodiodes 320 , 340 and 360 may be provided spaced apart from each other and substantially perpendicular to the uppermost surface of substrate 100 .
  • the plurality of photodiodes may include blue photodiode 320 , green photodiode 340 and red photodiode 360 . Blue photodiode 320 , green photodiode 340 and red photodiode 360 can be sequentially formed adjacent light reception surface 240 .
  • blue photodiode 320 may be formed at a position closest to light reception surface 240 and red photodiode 360 formed at a position farthest from light reception surface 240 .
  • At least one MOS transistor including gate electrode 400 , spacer 420 and gate insulating film 440 can be formed on and/or over the surface of substrate 100 in device forming area B.
  • silicon semiconductor substrate 100 can be prepared and certain areas of substrate 100 may be etched to form groove A.
  • Photodiodes 320 , 340 and 360 and a plurality of MOS transistors may be formed at device forming area B.
  • Inclined groove A may include two surfaces: inclined surface 220 and light reception surface 240 .
  • Inclined surface 220 may have an angle of approximately 45 degrees relative to the uppermost surface of substrate 100 and light reception surface 240 may be substantially perpendicular to the uppermost surface of substrate 100 .
  • reflection film 260 can be selectively formed on and/or over inclined surface 220 by depositing a metal film exhibiting excellent reflectivity against visible light on and/or over the entire surface of substrate 100 and polishing the surface of substrate 100 to remove the metal film.
  • the surface of substrate 100 may be polished using a chemical-mechanical polishing method.
  • reflection film 220 may alternatively be formed by forming a photoresist film pattern on and/or over device forming area B using a photolithography process, depositing a metal film on and/or over the photoresist film pattern, and removing the photoresist film pattern.
  • an ion implantation process can be repeatedly performed on and/or over device forming area B to form photodiodes 320 , 340 and 360 .
  • the ion implantation process may be performed using ion implantation energy that is adjusted such that ion implantation layers for photodiodes 320 , 340 , 360 are formed substantially perpendicular to the uppermost surface of substrate 100 , i.e., substantially parallel to light reception surface 240 .
  • Blue photodiode 320 , green photodiode 340 and red photodiode 360 can be sequentially formed spaced apart from each other in device forming area B adjacent light reception surface 240 .
  • At least one MOS transistor including gate electrode 400 , spacer 420 and gate insulating film 440 can be formed on the uppermost surface of device forming area B of substrate 100 .
  • a predetermined plug can be electrically connected to photodiodes 320 , 340 and 360 and the at least one MOS transistor may be formed to transmit signals generated by photodiodes 320 , 340 and 360 .
  • light which is vertically input to substrate 100 can be reflected from reflection film 260 by approximately 90 degrees, and the reflected light is received by light reception surface 240 and focused to photodiodes 320 , 340 , 360 where it is then converted into an electrical signal.
  • a CMOS image sensor which reflects incident light by approximately 90 degrees and inputs the light to a plurality of photodiodes whereby an obstacle for blocking the light may be formed on the photodiodes. Accordingly, it is possible to facilitate the formation of a device having a laminate structure that can increase the overall area for receiving incident light. Since the photodiodes and the MOS transistors can be connected at a shortest distance, plugs may not be necessary. Accordingly, since the generation of noise in a signal due to multistage plugs can be prevented, it can be possible to enhance the capability of the device.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
US11/849,732 2006-09-08 2007-09-04 Reflection type CMOS image sensor and method of manufacturing the same Expired - Fee Related US7675098B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020060086635A KR100778870B1 (ko) 2006-09-08 2006-09-08 반사 방식의 씨모스 이미지 센서 및 그의 제조 방법
KR10-2006-0086635 2006-09-08
KR10-2005-0086635 2006-09-08

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US20080061329A1 US20080061329A1 (en) 2008-03-13
US7675098B2 true US7675098B2 (en) 2010-03-09

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US (1) US7675098B2 (de)
JP (1) JP2008066732A (de)
KR (1) KR100778870B1 (de)
CN (1) CN100521153C (de)
DE (1) DE102007042359B4 (de)
TW (1) TWI349365B (de)

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KR100767588B1 (ko) * 2006-12-15 2007-10-17 동부일렉트로닉스 주식회사 수직형 이미지 센서의 제조 방법
KR100913325B1 (ko) * 2007-11-05 2009-08-20 주식회사 동부하이텍 듀얼 이미지 센서 및 그 제조 방법
KR100949257B1 (ko) * 2007-12-26 2010-03-25 주식회사 동부하이텍 이미지센서의 제조방법
JP5793688B2 (ja) * 2008-07-11 2015-10-14 パナソニックＩｐマネジメント株式会社 固体撮像装置
KR101009394B1 (ko) 2008-07-30 2011-01-19 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
KR20100075060A (ko) * 2008-12-24 2010-07-02 주식회사 동부하이텍 이미지 센서 및 이미지 센서의 제조 방법
CN102569320A (zh) * 2011-12-30 2012-07-11 上海中科高等研究院 图像传感器的感光区域以及制造方法、图像传感器
CN103199099B (zh) * 2013-04-11 2018-02-27 上海集成电路研发中心有限公司 具有高动态范围的图像传感器像素阵列
JP2015146364A (ja) 2014-02-03 2015-08-13 ソニー株式会社 固体撮像素子、固体撮像素子の駆動方法、固体撮像素子の製造方法および電子機器
CN104393008B (zh) * 2014-11-12 2019-03-19 上海集成电路研发中心有限公司 具有斜面pn结结构的像元单元及其制造方法
US9686457B2 (en) 2015-09-11 2017-06-20 Semiconductor Components Industries, Llc High efficiency image sensor pixels with deep trench isolation structures and embedded reflectors
US11552205B2 (en) 2020-11-13 2023-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Optical sensing device having inclined reflective surface

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US20060231898A1 (en) * 2005-04-13 2006-10-19 Samsung Electronics Co., Ltd. CMOS image sensor and method of manufacturing the same
US20070138590A1 (en) * 2005-12-15 2007-06-21 Micron Technology, Inc. Light sensor having undulating features for CMOS imager

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US20060081890A1 (en) * 2004-10-18 2006-04-20 Samsung Electronics Co.; Ltd CMOS image sensor and method of manufacturing the same
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US20070138590A1 (en) * 2005-12-15 2007-06-21 Micron Technology, Inc. Light sensor having undulating features for CMOS imager

Also Published As

Publication number Publication date
JP2008066732A (ja) 2008-03-21
TW200814310A (en) 2008-03-16
CN100521153C (zh) 2009-07-29
DE102007042359A1 (de) 2008-04-17
US20080061329A1 (en) 2008-03-13
TWI349365B (en) 2011-09-21
DE102007042359B4 (de) 2013-06-06
KR100778870B1 (ko) 2007-11-22
CN101140904A (zh) 2008-03-12

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