US7432475B2 - Vertical heat treatment device and method controlling the same - Google Patents

Vertical heat treatment device and method controlling the same Download PDF

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Publication number
US7432475B2
US7432475B2 US10/584,258 US58425804A US7432475B2 US 7432475 B2 US7432475 B2 US 7432475B2 US 58425804 A US58425804 A US 58425804A US 7432475 B2 US7432475 B2 US 7432475B2
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Prior art keywords
temperature
power feeding
process field
heater
blower
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US20070148606A1 (en
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Makoto Nakajima
Takanori Saito
Tsuyoshi Takizawa
Manabu Honma
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/04—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated adapted for treating the charge in vacuum or special atmosphere
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories or equipment specially adapted for furnaces of these types
    • F27B5/18—Arrangement of controlling, monitoring, alarm or like devices

Definitions

  • the present invention relates to a vertical heat processing apparatus and a control method for the same, and particularly to a semiconductor process technique.
  • semiconductor process includes various kinds of processes which are performed to manufacture a semiconductor device or a structure having wiring layers, electrodes, and the like to be connected to a semiconductor device, on a target substrate, such as a semiconductor wafer or a glass substrate used for an LCD (Liquid Crystal Display) or FPD (Flat Panel Display), by forming semiconductor layers, insulating layers, and conductive layers in predetermined patterns on the target substrate.
  • a target substrate such as a semiconductor wafer or a glass substrate used for an LCD (Liquid Crystal Display) or FPD (Flat Panel Display)
  • various processing apparatuses are used to subject a target substrate, such as a semiconductor wafer, to processes, such as CVD (Chemical Vapor Deposition), oxidation, diffusion, reformation, annealing, and etching.
  • CVD Chemical Vapor Deposition
  • oxidation diffusion
  • reformation oxidation
  • diffusion diffusion
  • reformation oxidation
  • annealing annealing
  • etching etching
  • vertical heat processing apparatuses that subject a number of wafers together to a heat process are known.
  • vertical heat processing apparatuses have a vertical airtight process chamber for accommodating wafers.
  • the process chamber has a load port formed at the bottom, which is selectively opened and closed by a lid moved up and down by an elevator.
  • the wafers are supported at intervals in the vertical direction on a holder called a wafer boat.
  • a heating furnace is disposed around the process chamber.
  • quartz process chambers are preferably used, because they are easy to clean or replace.
  • quartz process chambers have a large thermal capacity, and thus prolong the convergence time in attaining a target temperature in temperature increase recovery within a low temperature range.
  • An object of the present invention is to provide a vertical heat processing apparatus and a control method for the same, which can shorten the convergence time in attaining a target temperature in temperature increase recovery within a low temperature range, and thus can shorten the TAT and improve the throughput.
  • a vertical heat processing apparatus comprising:
  • a process chamber defining a process field configured to accommodate a plurality of target substrates supported at intervals in a vertical direction;
  • a heating furnace surrounding the process chamber, and including an electric heater configured to heat the process field from outside the process chamber;
  • an electric blower configured to send a cooling gas into the heating furnace, so as to cool the process field by the cooling gas from outside the process chamber;
  • a temperature sensor configured to detect a temperature inside the process field
  • control section configured to control the heater and the blower in accordance with detection data obtained by the temperature sensor
  • control section when the control section conducts temperature control to change a temperature of the process field from an initial temperature to a target temperature higher than the initial temperature but within a range of 100 to 500° C., the control section executes, in order to converge the process field to the target temperature,
  • a process chamber defining a process field configured to accommodate a plurality of target substrates supported at intervals in a vertical direction
  • a heating furnace surrounding the process chamber, and including an electric heater configured to heat the process field from outside the process chamber, and
  • the method comprising, in order to converge the process field to the target temperature:
  • FIG. 1 is a sectional side view schematically showing a vertical heat processing apparatus according to an embodiment of the present invention
  • FIG. 2 is a block diagram schematically showing the temperature control system of the apparatus shown in FIG. 1 where gas is circularly used;
  • FIG. 3 is a view showing an example of control of a heater
  • FIG. 4 is a view showing an example of control of a heater and a blower, using a common control variable
  • FIG. 5A is a view showing the time-temperature characteristic of an example of a control method for performing temperature increase recovery within a low temperature range.
  • FIG. 5B is a view showing the time-power feeding characteristic of the example shown in FIG. 5A .
  • FIG. 1 is a sectional side view schematically showing a vertical heat processing apparatus according to an embodiment of the present invention.
  • this vertical heat processing apparatus 1 includes a cylindrical and vertical process chamber 5 opened at the bottom. Further, the process chamber 5 is further provided with a flange 9 at the bottom, which is supported by a base plate 10 through a support member (not shown).
  • the process chamber 5 is integrally formed from quartz, which has high heat resistance.
  • the process chamber 5 defines therein a process field A 1 to accommodate a plurality of semiconductor wafers W stacked at intervals in the vertical direction.
  • the process chamber 5 has a body portion 5 b corresponding to the process field A 1 , which is thinner than an upper portion 5 a and a lower portion 5 c present above and below the body portion 5 b , respectively.
  • body portion 5 b has a wall thickness “t” of 2 to 6 mm, and preferable of 2 to 4 mm, and the difference in wall thickness between the body portion 5 b and the upper and lower portions 5 a and 5 c is 4 mm or less.
  • the body portion 5 b has a wall thickness “t” of about 4 mm, and the upper and lower portions 5 a and 5 c have a wall thickness of about 6 mm.
  • t wall thickness
  • the upper and lower portions 5 a and 5 c have a wall thickness of about 6 mm.
  • An exhaust port 4 is formed at the top of the process chamber 5 .
  • the exhaust port 4 is connected to, e.g., an exhaust nozzle laterally bent at right angles.
  • the exhaust nozzle is connected to an exhaust section GE including a pressure control valve and a vacuum pump.
  • the interior of the process chamber 5 is vacuum-exhausted and set at a predetermined vacuum level by the exhaust section GE.
  • a plurality of gas nozzles 3 penetrate the flange 9 at the bottom of the process chamber 5 to supply gases into the process chamber 5 .
  • the gas nozzles 3 are connected to a gas supply section GS including gas sources of a process gas and an inactive gas (for example N 2 gas).
  • the process chamber 5 has a load port 2 formed at the bottom to be opened and closed by the lid 6 .
  • a wafer holder (wafer boat) is loaded and unloaded into and out of the process chamber 5 through the load port 2 .
  • the holder 7 is made of quartz, and functions as holding means for holding semiconductor wafers W at intervals in the vertical direction. In this embodiment, the holder 7 can support, e.g., 25 wafers W each having a diameter of 300 mm, essentially at regular intervals in the vertical direction.
  • the holder 7 has a leg portion 11 connected at the center of the bottom.
  • the leg portion 11 is connected at its lower end to a rotating mechanism 12 disposed at the center of the lid 6 .
  • the rotating mechanism 12 is used to rotate the holder 7 during a process of wafers W.
  • a planar heater 13 for the bottom side is disposed on the lid 6 to surround the leg portion 11 to prevent heat radiation through the load port 2 .
  • the lid 6 is attached to the distal end of an arm (not shown) supported by an elevating mechanism (not shown), such as a boat elevator.
  • the elevating mechanism is used to integratedly move the holder 7 and lid 6 between a position inside the process chamber 5 and a loading area (not shown) therebelow used as a work space.
  • the loading area is provided with a transfer mechanism (not shown) disposed therein to transfer wafers W to and from the holder 7 .
  • the process chamber 5 is surrounded and covered with a heating furnace 8 for heating the process chamber 5 .
  • the heating furnace 8 includes a cylindrical cover 14 and an electric heater 15 disposed therein.
  • the cover 14 originally has openings at the top and bottom in accordance with the shape of the process chamber 5 , but the openings are preferably essentially closed.
  • the heater 15 is formed of, e.g., resistance heating bodies, which expand in an annular direction along the inner surface of the cover 14 . Thus, the heater 15 heats the process field A 1 from outside the process chamber 5 .
  • the heater 15 comprises portions respectively disposed at the zones of the process field A 1 divided in the vertical direction, so as to individually control heating of the respective zones.
  • the heater 15 may be formed of a quartz pipe and a carbon wire inserted therein, for example.
  • the cover 14 is structured as a water-cooling jacket in which cooling water is circulated.
  • the cover 14 may be formed of a cylindrical heat-insulating cover.
  • a cover of the water-cooling jacket type is preferably used.
  • a blower (blower machine) 16 is connected to the heating furnace 8 , to send a cooling gas, such as air, into the heating furnace 8 .
  • a cooling gas such as air
  • the cooling gas cools the process field A 1 from outside the process chamber 5 .
  • a gas supply duct 17 from the blower 16 is connected to a lower portion of the heating furnace 8 .
  • An exhaust duct 18 for exhausting gas from the heating furnace 8 is connected to an upper portion of the heating furnace 8 .
  • Gas in the heating furnace 8 can be exhausted from the exhaust duct 18 through a heat exchanger 19 to a factory exhaust section.
  • gas in the heating furnace 8 may be circularly used, without being exhausted to the factory exhaust section.
  • FIG. 2 is a block diagram schematically showing the temperature control system of the apparatus shown in FIG. 1 where gas is circularly used.
  • gas from the heating furnace 8 performs heat-exchange at the heat exchanger 19 , and then returned to the suction side of the blower 16 , thereby being circularly used.
  • gas is preferably circulated through an air filter 20 .
  • the air filter 20 is preferably disposed on the delivery side of the blower 16 , but it may be disposed only on the suction side of the blower 16 .
  • the heat exchanger 19 is disposed to utilize waste heat of the heating furnace 8 .
  • a temperature sensor 21 is disposed in the process field A 1 within the process chamber 5 , to detect the process temperature.
  • the detection signal or detection data obtained by the temperature sensor 21 is fed back to a temperature controller 22 .
  • the temperature controller 22 contains a program (sequence) for controlling the heater 15 and blower 16 , so as to efficiently perform temperature increase recovery within a low temperature range, in accordance with a preset temperature (target temperature).
  • the electric heater 15 is controlled by a power controller, such as a thyristor 23 , in accordance with signals from the temperature controller 22 .
  • the electric blower 16 is controlled by a power controller, such as an inverter 24 , in accordance with signals from the temperature controller 22 .
  • temperature control of the process field A 1 within the process chamber 5 will be assumed such that the temperature thereof is changed from an initial temperature to a target temperature higher than the initial temperature but within a low temperature range (a range of 100 to 500° C.).
  • the temperature controller 22 controls the heater 15 and blower 16 , based on detection data obtained by the temperature sensor 21 , so as to converge the temperature of the process field A 1 to a target temperature in a short time. With this arrangement, it is possible to shorten the convergence time in attaining a target temperature in temperature increase recovery within a low temperature range, and to improve the controllability thereof.
  • the temperature controller 22 may perform the following steps. At first, the power feeding to the heater 15 is set at a first supply rate or more to heat the process field A 1 to a predetermined temperature immediately below a target temperature. Then, at a time point when it reaches this predetermined temperature, the power feeding to the heater 15 is decreased to a rate lower than the first supply rate. Then, while the power feeding to the heater 15 is set at a rate lower than the first supply rate, a cooling gas is supplied by the blower 16 to forcibly cool the process field A 1 . Then, the power feeding to the heater 15 is increased to maintain the process field A 1 at the target temperature. At this time, the power feeding to the blower 16 is decreased, as needed.
  • the temperature controller 22 may keep the power feeding to the blower 16 constant from the step of heating the process field A 1 to a predetermined temperature to the step of forcibly cooling the process field A 1 . In this case, the temperature controller 22 only performs adjustment to increase/decrease the power feeding to the heater 15 .
  • FIG. 3 is a view showing an example of control of the heater according to this first control method.
  • the power feeding to the heater 15 is controlled in accordance with a control variable output from the temperature controller 22 , independently of the power feeding to the blower 16 .
  • the blower 16 in order to perform temperature increase recovery within a low temperature range, while the blower 16 is maintained at a constant blowing rate (for example, 1 m 3 /min), the power feeding to the heater 15 is performed until a time point immediately before a target temperature (until a time point when the process field A 1 reaches a predetermined temperature immediately below the target temperature), and then the power feeding to the heater 15 is decreased to converge the temperature of the wafers W to the target temperature.
  • the predetermined temperature is preferably preset to be 20 to 80° C. lower than the target temperature.
  • the blower 16 can be set at a blowing rate of, e.g., 7 m 3 /min.
  • the temperature controller 22 may use a higher rate of the power feeding to the blower 16 in the step of forcibly cooling the process field A 1 than in the step of heating the process field A 1 to a predetermined temperature. In this case, the temperature controller 22 performs adjustment to increase/decrease the power feeding to the heater 15 and the power feeding to the blower 16 .
  • FIG. 4 is a view showing an example of control of the heater and blower, using a common control variable, according to this second control method.
  • the temperature controller 22 uses one control variable to control the power feeding to the heater 15 and the power feeding to the blower 16 .
  • This control variable is arranged to increase the power feeding to the heater 15 as the absolute value of the variable increases in the positive direction, and to increase the power feeding to the blower 16 as the absolute value of the variable increases in the negative direction.
  • FIG. 5A is a view showing the time-temperature characteristic of an example of a control method for performing temperature increase recovery within a low temperature range.
  • FIG. 5B is a view showing the time-power feeding characteristic of the example shown in FIG. 5A .
  • the power feeding to the heater 15 is performed until a time point immediately before a target temperature (until a time point when the process field A 1 reaches a predetermined temperature immediately below the target temperature), and then the power feeding to the heater 15 is decreased and the power feeding to the blower 16 is increased to forcibly cool the process chamber 5 , so as to converge the temperature of the wafers W to the target temperature.
  • the predetermined temperature is preferably preset to be 20 to 80° C. lower than the target temperature.
  • the power feeding to the heater 15 is performed while the power feeding to the blower 16 is set at 0 (stopped) in the step of heating the process field A 1 to a predetermined temperature immediately below a preset temperature (target temperature).
  • the power feeding to the heater 15 is set at 0 (stopped) and the power feeding to the blower 16 is started to forcibly air-cool the interior of the heating furnace 8 and the process chamber 5 , so as to put a brake on the temperature increase.
  • the power feeding to the blower 16 is set at 0 (stopped) and the power feeding to the heater 15 is restarted, so as to maintain the process field A 1 at the target temperature.
  • the vertical heat processing apparatus 1 can shorten the convergence time in temperature increase recovery within a low temperature range, and thus can shorten the TAT and improve the throughput. Further, since the body portion 5 b of the process chamber 5 has a wall thickness smaller than that of the other portions, the process chamber 5 has a decreased thermal capacity while maintaining the size of the process chamber 5 , which allows the convergence time to be much shorter. Furthermore, since the body portion 5 b of the process chamber 5 has a smaller wall thickness, the temperature decrease performance can be improved due to natural cooling and forcible air-cooling, which is also effective to improve the TAT and throughput.
  • the first and second control methods for realizing temperature increase recovery within a low temperature range can shorten the convergence time in the temperature increase recovery within a low temperature range, and thus can shorten the TAT and improve the throughput.
  • the temperature controller 22 uses a higher rate of the power feeding to the blower 16 in the step of forcibly cooling the process field A 1 than in the step of heating the process field A 1 to a predetermined temperature. This arrangement can further improve controllability of the temperature increase recovery, as compared to the first control method. Consequently, as show in FIG. 5A , the second control method can further shorten the convergence time in temperature increase recovery within a low temperature range, and thus can shorten the TAT and improve the throughput.
  • the temperature of the process field A 1 was changed from 200° C. to 400° C. at a heat-up rate of 30° C./min.
  • the present example 2 shortened the convergence time by 23.6% (1.5 minutes), as compared to the comparative example 2.
  • a vertical heat processing apparatus and a control method for the same which can shorten the convergence time in attaining a target temperature in temperature increase recovery within a low temperature range, and thus can shorten the TAT and improve the throughput.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
US10/584,258 2003-12-26 2004-12-22 Vertical heat treatment device and method controlling the same Expired - Lifetime US7432475B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003432596A JP4642349B2 (ja) 2003-12-26 2003-12-26 縦型熱処理装置及びその低温域温度収束方法
JP2003-432596 2003-12-26
PCT/JP2004/019251 WO2005064254A1 (ja) 2003-12-26 2004-12-22 縦型熱処理装置及びその制御方法

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JP (1) JP4642349B2 (enrdf_load_stackoverflow)
KR (1) KR100907598B1 (enrdf_load_stackoverflow)
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US20060196418A1 (en) * 2005-03-04 2006-09-07 Picosun Oy Apparatuses and methods for deposition of material on surfaces
US20080236477A1 (en) * 2007-03-29 2008-10-02 Hideki Ito Vapor phase growth apparatus and vapor phase growth method
US20110076632A1 (en) * 2009-09-26 2011-03-31 Tokyo Electron Limited Thermal processing apparatus and cooling method
US20120037096A1 (en) * 2010-08-16 2012-02-16 Takagi Industrial Co., Ltd. Combustion apparatus, method for combustion control, combustion control board, combustion control system and water heater
US20120064469A1 (en) * 2010-09-07 2012-03-15 Tokyo Electron Limited Vertical-type heat treatment apparatus, and control method for same
CN102403195A (zh) * 2010-09-07 2012-04-04 东京毅力科创株式会社 纵型热处理装置及其控制方法
US8835811B2 (en) 2011-03-01 2014-09-16 Tokyo Electron Limited Thermal processing apparatus and method of controlling the same
US9255736B2 (en) 2010-09-09 2016-02-09 Tokyo Electron Limited Vertical-type heat treatment apparatus
US10431479B2 (en) * 2017-01-12 2019-10-01 Tokyo Electron Limited Heat treatment apparatus and temperature control method
US11211265B2 (en) * 2018-04-12 2021-12-28 Tokyo Electron Limited Heat treatment apparatus and heat treatment method
US20230060692A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company Ltd. Annealing apparatus and method of operating the same

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JP2009010009A (ja) * 2007-06-26 2009-01-15 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
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JP2012172871A (ja) 2011-02-18 2012-09-10 Tokyo Electron Ltd 熱処理装置および熱処理装置の温度測定方法
US20150370245A1 (en) * 2012-12-07 2015-12-24 Hitachi Kokusai Electric Inc. Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, and control program
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US20170207078A1 (en) * 2016-01-15 2017-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition apparatus and semiconductor process
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WO2019163295A1 (ja) * 2018-02-23 2019-08-29 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クリーニング方法、半導体装置の製造方法、基板処理装置、及びプログラム
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US8211235B2 (en) * 2005-03-04 2012-07-03 Picosun Oy Apparatuses and methods for deposition of material on surfaces
US20060196418A1 (en) * 2005-03-04 2006-09-07 Picosun Oy Apparatuses and methods for deposition of material on surfaces
US20080236477A1 (en) * 2007-03-29 2008-10-02 Hideki Ito Vapor phase growth apparatus and vapor phase growth method
US7837794B2 (en) * 2007-03-29 2010-11-23 Nuflare Technology, Inc. Vapor phase growth apparatus and vapor phase growth method
US20110076632A1 (en) * 2009-09-26 2011-03-31 Tokyo Electron Limited Thermal processing apparatus and cooling method
US9099505B2 (en) * 2009-09-26 2015-08-04 Tokyo Electron Limited Thermal processing apparatus and cooling method
US9513003B2 (en) * 2010-08-16 2016-12-06 Purpose Company Limited Combustion apparatus, method for combustion control, board, combustion control system and water heater
US20120037096A1 (en) * 2010-08-16 2012-02-16 Takagi Industrial Co., Ltd. Combustion apparatus, method for combustion control, combustion control board, combustion control system and water heater
US20120064469A1 (en) * 2010-09-07 2012-03-15 Tokyo Electron Limited Vertical-type heat treatment apparatus, and control method for same
CN102403195A (zh) * 2010-09-07 2012-04-04 东京毅力科创株式会社 纵型热处理装置及其控制方法
US9255736B2 (en) 2010-09-09 2016-02-09 Tokyo Electron Limited Vertical-type heat treatment apparatus
US8835811B2 (en) 2011-03-01 2014-09-16 Tokyo Electron Limited Thermal processing apparatus and method of controlling the same
US9748122B2 (en) 2011-03-01 2017-08-29 Tokyo Electron Limited Thermal processing apparatus and method of controlling the same
US10431479B2 (en) * 2017-01-12 2019-10-01 Tokyo Electron Limited Heat treatment apparatus and temperature control method
US11211265B2 (en) * 2018-04-12 2021-12-28 Tokyo Electron Limited Heat treatment apparatus and heat treatment method
US20230060692A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company Ltd. Annealing apparatus and method of operating the same

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US20070148606A1 (en) 2007-06-28
JP2005188869A (ja) 2005-07-14
KR20060107740A (ko) 2006-10-16
JP4642349B2 (ja) 2011-03-02
KR100907598B1 (ko) 2009-07-14
TWI364786B (enrdf_load_stackoverflow) 2012-05-21
WO2005064254A1 (ja) 2005-07-14

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