US7220481B2 - High dielectric constant composite material and multilayer wiring board using the same - Google Patents

High dielectric constant composite material and multilayer wiring board using the same Download PDF

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US7220481B2
US7220481B2 US10/062,562 US6256202A US7220481B2 US 7220481 B2 US7220481 B2 US 7220481B2 US 6256202 A US6256202 A US 6256202A US 7220481 B2 US7220481 B2 US 7220481B2
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composite material
dielectric constant
powder
high dielectric
metal
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US20020168510A1 (en
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Yuichi Satsu
Akio Takahashi
Tadashi Fujieda
Takumi Ueno
Haruo Akahoshi
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Hitachi Ltd
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Hitachi Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/145—Organic substrates, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0209—Inorganic, non-metallic particles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0215—Metallic fillers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0218—Composite particles, i.e. first metal coated with second metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/254—Polymeric or resinous material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/256—Heavy metal or aluminum or compound thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/269—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension including synthetic resin or polymer layer or component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2998—Coated including synthetic resin or polymer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31—Surface property or characteristic of web, sheet or block

Definitions

  • the present invention relates to a high dielectric constant material used for multilayer wiring boards having a built-in passive element capacitor, and a multilayer wiring board and a module substrate using the said material.
  • the method using ECR-CVD has problems in that a specific apparatus must be used, that it is impossible to form the dielectric films at low cost by a batch process, and that it is difficult to form a dielectric film having a complicate configuration.
  • An object of the present invention is to provide a high dielectric constant composite material having a volume resistivity of 10 9 ⁇ or higher and also maintaining a high dielectric constant of 15 or above and a low dielectric loss tangent of 0.1 or below even in the high frequency region of several tens GHz order, and a multilayer wiring board using such a composite material.
  • Another object of the present invention is to provide a high dielectric constant composite material compounded with an organic resin capable of forming a passive element directly on a surface or interior of a printed wiring board, and good in processability, and a multilayer printed wiring board using the same.
  • the present invention provides a high dielectric constant composite material having a dielectric constant of 15 or above, comprising an organic resin and, dispersed therein, an inorganic filler containing a metal powder as an essential component.
  • FIG. 1 is a sectional view of the particles of metal powder after the insulation treatment in the first and second embodiments of the present invention.
  • FIG. 2 is a sectional view of the particles of metal powder after the surface treatment in the first and second embodiments of the present invention.
  • FIG. 3 is a sectional view of the high dielectric constant composite material in the first and second embodiments of the present invention.
  • FIG. 4 is a cross-sectional view of the agglomerated metal powder after the insulation treatment in the fourth embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of the agglomerated metal powder after the surface treatment in the fourth embodiment of the present invention.
  • FIG. 6 is a cross-sectional view of the high dielectric constant composite material in the fourth embodiment of the present invention.
  • FIG. 7 is a cross-sectional view of the agglomerated metal powder after plating in the fifth embodiment of the present invention.
  • FIG. 8 is a cross-sectional view of the agglomerated metal powder after the insulation treatment in the fifth embodiment of the present invention.
  • FIG. 9 is a cross-sectional view of the agglomerated metal powder after the surface treatment in the fifth embodiment of the present invention.
  • FIG. 10 is a cross-sectional view of the high dielectric constant composite material in the fifth embodiment of the present invention.
  • FIG. 11 is a cross-sectional view of the agglomerated metal powder after the insulation treatment in the sixth embodiment of the present invention.
  • FIG. 12 is a cross-sectional view of the metal/inorganic matter composite powder after the surface treatment in the sixth embodiment of the present invention.
  • FIG. 13 is a cross-sectional view of the high dielectric constant composite material in the sixth embodiment of the present invention.
  • FIG. 14 is a sectional view of the metal/inorganic resin composite powder in the seventh and eighth embodiments of the present invention.
  • FIG. 15 is a sectional view of the metal/inorganic matter composite powder after the insulation treatment in the seventh and eighth embodiments of the present invention.
  • FIG. 16 is a sectional view of the metal/inorganic matter composite powder after the surface treatment in the seventh and eighth embodiments of the present invention.
  • FIG. 17 is a sectional view of the high dielectric composite material in the seventh and eighth embodiments of the present invention.
  • metal powder which suffers no energy loss due to skin effect even at a high frequency of several tens GHz order, and it is important therefor that the size of the metal powder is submicron, and that insulation is secured for every particle of metal powder.
  • insulation treatment of the individual particles of metal powder but a chemical treatment with an inorganic salt such as phosphates or chromates is most effective. This is for the reason that an insulation layer of an inorganic salt is formed on the particle surfaces of metal powder by this treatment.
  • This insulating film has higher anti-heat and anti-moisture reliability than other types of insulating film.
  • the first feature of the present invention is that a high dielectric constant composite material having a dielectric constant of 15 or above, comprising an organic resin and, dispersed therein, an inorganic filler containing a metal powder as its essential component, is provided.
  • the second feature of the present invention is that this high dielectric constant material suffers a dielectric loss tangent of only 0.1 or less in the frequency region of from 100 MHz to 80 GHz.
  • every component in the inorganic filler containing a metal powder as essential component has an average particle size of 5 ⁇ m or less.
  • an inorganic filler comprising a metal oxide may be added for preventing sedimentation of the metal powder in the resin varnish. It is also effective to use a composite material in which the particle size of the metal powder was restricted to submicron by complexing of an inorganic filler comprising a metal powder and the one comprising a material other than metal powder.
  • the high dielectric composite material of the present invention has a volume resistivitiy of 10 9 ⁇ cm or above and is suited for use as substrates for electronic devices.
  • the inorganic filler containing a metal powder as its essential component may include agglomerates thereof having an average particle size of 5 ⁇ m or less.
  • the metals usable as metal powder in the present invention include the elements of Groups 1B, 2B, 3B, 4B, 5B, 6B, 7B, 8, 2A, 3A, 4A and 5A (excluding boron, carbon, nitrogen, phosphorus and arsenic) of the Periodic Table and their alloys, for instance, Al, Mn, Si, Mg, Cr, Ni, Nb, Mo, Cu, Fe, W, Zn, Sn, Pb, Ag, Ti, Zr, Ta, Pt, Sb, and their alloys.
  • the metal powder may have a metallic covering such as electric plated film the surface thereof with a thickness of 1000 to 1 nm using at least one metal selected from Cr, Cd, Zn, Mn and Fe.
  • the organic resins applicable in the present invention include thermosetting resins such as epoxy resins, phenol resins, bismaleimide resins and cyanate resins, thermoplastic resins such as polyimide resins, polyphenylene oxide and polyphenylene sulfide, and mixtures thereof. If desired, such an organic resin may be dispersed in a solvent such as methyl ethyl ketone, isopropyl alcohol or methyl Cellosolve to form a paste or a dispersion, which is subjected to screen printing or spin coating to form a high dielectric constant layer.
  • a solvent such as methyl ethyl ketone, isopropyl alcohol or methyl Cellosolve
  • a composite material comprising an organic resin and, dispersed therein, an inorganic filler having as essential component a metal powder which has been subjected to a surface insulation treatment and coupling treatment (or surface treatment) is used for the capacitor in a multilayer wiring board in which a capacitor having a dielectric layer interposed between the electrodes is formed in the circuit, to thereby provide a multilayer wiring board having a built-in condenser with a large electrical capacitance.
  • a composite material comprising an organic resin and, dispersed therein, an inorganic filler having as essential component a metal powder subjected to insulation and coupling treatments on the surface is used for the capacitor in a module substrate in which a capacitor having a dielectric layer interposed between the electrodes is formed in the circuit, to provide a module substrate having a built-in condenser with a large electrical capacitance.
  • the present inventors found that for obtaining a composite material containing an organic resin and having a dielectric constant of 25 or greater and a dielectric loss tangent of 0.1 or less even at a frequency of several tens GHz order, it is expedient to apply a chemical insulation treatment with an inorganic salt and to fill in the organic resin a metal powder of a submicron size which has been subjected to a coupling treatment.
  • a metal powder of a submicron size is intended to minimize the dielectric loss tangent due to skin effect at a frequency of the several tens GHz order. It is for the same reason that securing of insulating performance of the individual particles of metal powder by the chemical treatment using an inorganic salt is important.
  • the coupling treatment on the metal powder which has been subjected to an insulation treatment is conducted as it is imperative to improve compatibility with the resin used. This treatment is schemed not only to increase metal powder loading in the resin but also to improve workability of the mixture and inhibit sedimentation of the metal powder.
  • the produced high dielectric constant composite material incorporating an organic matter has a volume resistivity of 10 9 ⁇ cm or higher.
  • EP828 produced by Yuka Shell Epoxy Co., Ltd.
  • m-phenylenediamine produced by Wako Pure Chemical Industries, Ltd.
  • 2E4MZ-CN produced by Shikoku Chemicals Corp.
  • Iron powder having an average particle size of 0.5 ⁇ m was used as a starting material for the high dielectric constant composite material.
  • a phosphate-based chemical treating solution containing 0.4 mol/l of benzotriazole as rust inhibitor and 0.1% by weight of EF104 (produced by Tohchem Products Corp.) as surfactant was used.
  • S510 produced by Chisso Corp. was used as surface treating solution for the insulated iron powder.
  • the dielectric constant and dielectric loss tangent of the high dielectric constant composite material of this Example of the present invention are explained below.
  • test pieces obtained from the above high dielectric constant composite material worked into a toroidal shape measuring 7 –0.05 mm in external diameter, 3.04+0.06 mm in inner diameter and 2 mm or 4 mm in thickness.
  • a determination system comprising a network analyzer (HP 8720C) and coaxial air line
  • HP 8720C network analyzer
  • test pieces obtained from the high dielectric constant composite material worked into a square pillar of 1 mm ⁇ 1 mm ⁇ 100 mm, and for the measurement in the frequency region of 20 GHz to 40 GHz, there were used test pieces of film-form test pieces with 100 ⁇ m thick.
  • the measurement was carried out by a cavity resonance method using 8722 ES Network Analizzer manufactured by Agilent Technology Co.
  • the electrodes having a main electrode external diameter of 50 mm, a guard electrode inner diameter of 52 mm, its external diameter of 80 mm and an opposite electrode external diameter of 80 mm were formed on a resin plate made of the said high dielectric composite material, and volume resistivity was determined by an LIC meter (HP4248A) at a frequency of 100 kHz. The results are shown in Table 1.
  • Example 1 Comp. Zinc 0.5 Not Conducted 90–30 0.8–0.1 5 ⁇ 10 3
  • Example 2 Conducted Comp. Zinc 20 Conducted Conducted Conducted 20–13 0.5–0.2 1 ⁇ 10 13
  • Example 3 Comp. Zinc 0.1 Conducted Conducted 20–12 0.5–0.1 2 ⁇ 10 13
  • Example 4 (agglo- (50) merate) Comp. Copper 1 Not Conducted 80–30 0.8–0.1 1 ⁇ 10 4
  • Example 5 (Cr plating (0.01) Conducted thickness) Comp. Cr—A1 2 O 3 1, 0.1 Conducted Not — — —
  • Example 6 Conducted Comp.
  • EP1001 produced by Yuka Shell Epoxy Co., Ltd.
  • dicyandiamide produced by Wako Pure Chemical Industries, Ltd.
  • 2E4MZ-CN produced by Shikoku Chemicals Corp.
  • Zinc powder having as average particle size of 0.5 ⁇ m was used as high dielectric constant material.
  • a phosphate-based chemical treating solution comprising 0.4 mol/l of benzotriazole as rust inhibitor and 0.1% by weight of EF104 (produced by Tohchem Products Corp.) as surfactant was used.
  • S510 produced by Chisso Corp.
  • EP806 produced by Yuka Shell Epoxy Co., Ltd.
  • m-phenylenediamine produced by Wako Pure Chemical Industries, Ltd.
  • 2E4MZ-CN produced by Shikoku Chemicals Corp.
  • a zinc powder having an average particle size of 3 ⁇ m was used as a starting material for the high dielectric constant composite material.
  • a phosphate-based chemical treating solution containing 0.4 mol/l.
  • EP1001 produced by Yuka Shell Epoxy Co., Ltd.
  • dicyandiamide produced by Wako Pure Chemical Industries, Ltd.
  • 2E4MZ-CN produced by Shikoku Chemicals Corp.
  • a zinc powder having an average particle size of 0.1 ⁇ m ground by using a ball mill was used as a starting material for the high dielectric constant composite material.
  • the zinc powder was agglomerated, it was sieved with a sieve having an opening of 5 ⁇ m so as to pass the agglomerated zinc powder having a maximum particle size of 5 ⁇ m or less.
  • a phosphate-based chemical treating solution containing 0.4 mol/l. of benzotriazole as rust inhibitor and 0.1% by weight of EF104 (produced by Tohchem Products Corp.) as a surfactant was used.
  • S510 produced by Chisso Corp.
  • EP806 produced by Yuka Shell Epoxy Co., Ltd.
  • m-phenylenediamine produced by Wako Pure Chemical Industries, Ltd.
  • 2E4MZ-CN produced by Shikoku Chemicals Corp.
  • a copper powder having an average particle size of 1 ⁇ m was used as a starting material for the high dielectric constant composite material.
  • a phosphate-based chemical treating solution containing 0.4 mol/l.
  • EP806 produced by Yuka Shell Epoxy Co., Ltd.
  • m-phenylenediamine produced by Wako Pure Chemical Industries, Ltd.
  • 2E4MZ-CN produced by Shikoku Chemicals Corp.
  • a chromium powder having an average particle size of 1 ⁇ m and an Al 2 O 3 powder having an average particle size of 0.1 ⁇ m were used as a starting material for the high dielectric constant composite material.
  • a phosphate-based chemical treating solution containing 0.4 mol/l.
  • a process for producing the high dielectric constant composite material according to the seventh embodiment of the present invention is described.
  • ESCN190-2 (produced by Sumitomo Chemical Co., Ltd.) was used as epoxy resin
  • H900 produced by Tohto Kasei Co., Ltd.
  • TPP produced Hokko Chemical Co., Ltd.
  • a flat Fe/Al 2 O 3 composite powder mixed at the nanometer level was used as high dielectric constant material.
  • the average size of the minor axis of this composite powder was 0.2 ⁇ m, and the Fe to Al 2 O 3 volume ratio was 7:3.
  • a sectional view of the Fe/Al 2 O 3 composite powder used is shown in FIG. 14 . As is seen from FIG.
  • the metal/inorganic matter composite powder according to the instant Example of the present invention has a structure in which the metal powder particles 1 are integrated with the inorganic matter 5 .
  • a phosphate-based chemical treating solution comprising 0.4 mol/l of benzotriazole as rust inhibitor and 0.1% by weight of EF104 (produced by Tohchem Products Corp.) as surfactant was used for the insulation of the Fe/Al 2 O 3 composite powder.
  • S510 produced by Chisso Corp. was used as the surface treating solution for the iron powder after the insulation treatment.
  • a process for producing the high dielectric constant composite material according to the eighth embodiment of the present invention is explained.
  • Epikote 828 produced by Yuka Shell Epoxy Co., Ltd.
  • m-phenylenediamine produced by Wako Pure Chemical Industries, Ltd.
  • 2E4MZ-CN produced by Shikoku Chemicals Corp.
  • a flat Fe/BaTiO 3 composite powder mixed at the nanometer level was used as high dielectric constant material.
  • the average size of the minor axis of this composite powder was 0.2 ⁇ m, and the Fe to BaTiO 3 volume ratio was 7:3.
  • a sectional view of the Fe/BaTiO 3 composite powder used is shown in FIG.
  • a phosphate-based chemical treating solution comprising 0.4 mol/l of benzotriazole as rust inhibitor and 0.1% by weight of EF104 (produced by Tohchem Products Corp.) as surfactant was used for the insulation of the Fe/BaTiO 3 composite powder.
  • EF104 produced by Tohchem Products Corp.
  • S510 produced by Chisso Corp. was used as the surface treating solution for the insulated iron powder.
  • Examples 1 to 8 confirm that the substrates made by using the high dielectric constant composite material of the present invention characteristically have a high dielectric constant, a low dielectric loss tangent and a high volume resistivity, and thus are possessed of the advantageous properties as a substrate having a built-in filter, A/D converter, terminals, decoupling condenser, energy storing condenser or such.
  • a phosphate-based chemical treating solution containing 0.4 mol/l of benzotriazole as rust inhibitor and 0.1% by weight of EF104 (produced by Tohchem Products Corp.) as surfactant was used.
  • S510 produced by Chisso Corp. was used as surface treating solution for iron powder after the insulation treatment.
  • the dielectric constant, dielectric loss and volume resistivity of the obtained organic resin/metal composite material were determined in the same way as in Example 1. The results are shown in Table 1.
  • a process for producing the organic resin/metal composite material according to the second comparative example is explained.
  • EP1001 produced by Yuka Shell Epoxy Co., Ltd.
  • dicyandiamide produced by Wako Pure Chemical Industries, Ltd.
  • 2E4MZ-CN produced by Shikoku Chemicals Corp.
  • Zinc powder having an average particle size of 0.5 ⁇ m was used as a starting material for the organic resin/metal composite material.
  • S510 (produced by Chisso Corp.) was used as surface treating solution for zinc powder.
  • a process for producing the organic resin/metal composite material according to the third comparative example is explained below.
  • EP806 produced by Yuka Shell Epoxy Co., Ltd.
  • m-phenylenediamine produced by Wako Pure Chemical Industries, Ltd.
  • 2E4MZ-CN produced by Shikoku Chemicals Corp.
  • a zinc powder having an average particle size of 20 ⁇ m was used as a starting material for the organic resin/metal composite material.
  • a phosphate-based chemical treating solution containing 0.4 mol/l.
  • this organic resin/metal composite material has good value as to the volume resistivity, but has a small dielectric constant and a large dielectric loss tangent. Thus, this composite material is not suitable as a high dielectric constant substrate material.
  • the zinc powder was agglomerated, it was sieved with a sieve having an opening of 5 ⁇ m so as to pass the agglomerated zinc powder having a maximum particle size of 5 ⁇ m or less.
  • a phosphate-based chemical treating solution containing 0.4 mol/l. of benzotriazole as rust inhibitor and 0.1% by weight of EF104 (produced by Tohchem Products Corp.) as a surfactant was used.
  • S510 produced by Chisso Corp.
  • this organic resin/metal composite material has good value as to the volume resistivity, but has a small dielectric constant and a large dielectric loss tangent. Thus, this composite material is not suitable as a high dielectric constant substrate material.
  • a process for producing the organic resin/metal composite material according to the fifth comparative example is explained below.
  • EP806 produced by Yuka Shell Epoxy Co., Ltd.
  • m-phenylenediamine produced by Wako Pure Chemical Industries, Ltd.
  • 2E4MZ-CN produced by Shikoku Chemicals Corp.
  • a copper powder having an average particle size of 1 ⁇ m was used as a starting material for the organic resin/metal composite material.
  • S510 (produced by Chisso Corp.) was used as a surface treating solution for the chromium plated copper powder.
  • this organic resin/metal composite material has good value as to the dielectric constant, but has a large dielectric loss tangent and a small volume resistivity. Thus, this composite material is not suitable as a substrate material.
  • a process for producing the organic resin/metal composite material according to the seventh comparative example of the present invention is described.
  • ESCN190-2 (produced by Sumitomo Chemical Co., Ltd.) was used as epoxy resin
  • H900 produced by Tohto Kasei Co., Ltd.
  • TPP produced Hokko Chemical Co., Ltd.
  • a spherical Fe/Al 2 O 3 composite powder was used as a starting material for the organic resin/metal composite material.
  • the average size of this composite powder was 10 ⁇ m, and the Fe to Al 2 O 3 volume ratio was 7:3.
  • a phosphate-based chemical treating solution comprising 0.4 mol/l of benzotriazole as rust inhibitor and 0.1% by weight of EF104 (produced by Tohchem Products Corp.) as surfactant was used for the insulation of the Fe/Al 2 O 3 composite powder.
  • EF104 produced by Tohchem Products Corp.
  • S510 produced by Chisso Corp. was used as the surface treating solution for the insulated iron powder.
  • a process for producing an organic resin/metal composite material according to the eighth comparative example is explained.
  • this comparative example there were used Epikote 828 (produced by Yuka Shell Epoxy Co., Ltd.) as epoxy resin, m-phenylenediamine (produced by Wako Pure Chemical Industries, Ltd.) as epoxy resin curing agent, and 2E4MZ-CN (produced by Shikoku Chemicals Corp.) as curing accelerator.
  • a flat Fe/BaTiO 3 composite powder mixed at the nanometer level was used as a starting material for the organic resin/metal composite material.
  • the average size of the minor axis of this composite powder was 0.2 ⁇ m, and the Fe to BaTiO 3 volume ratio was 7:3.
  • S510 produced by Chisso Corp. was used as the surface treating solution for the iron powder after insulation.
  • the high dielectric constant composite material according to the present invention comprises an organic resin having filled therein a metal powder of a submicron size which was subjected to a chemical insulating treatment with an inorganic salt and surface treatment in order to improve compatibility with the organic resin, so that it has a dielectric constant of 15 or above and suffers a dielectric loss tangent of only 0.1 or less even in the frequency range of the GHz order.
  • the substrates using the high dielectric constant composite material of the present invention typically have a high dielectric constant and demonstrate a low dielectric loss tangent and a high volume resistivity, so that they are possessed of the advantageous properties in use as a substrate having a built-in filter, A/D converter, decoupling condenser, energy storing condenser or such.

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  • Condensed Matter Physics & Semiconductors (AREA)
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US20070063519A1 (en) * 2001-04-20 2007-03-22 Aloys Wobben Method for operating a wind turbine
US20070116976A1 (en) * 2005-11-23 2007-05-24 Qi Tan Nanoparticle enhanced thermoplastic dielectrics, methods of manufacture thereof, and articles comprising the same
US20100044069A1 (en) * 2008-08-22 2010-02-25 Usa As Represented By The Administrator Of The National Aeronautics And Space Administration Asymmetric Dielectric Elastomer Composite Material
CN104985896A (zh) * 2015-06-26 2015-10-21 广东工业大学 高介电常数的陶瓷-聚合物复合材料及其制备方法
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US20040070945A1 (en) * 2002-06-05 2004-04-15 Wayne Rowland Heat dissipation structures and method of making
US6842140B2 (en) * 2002-12-03 2005-01-11 Harris Corporation High efficiency slot fed microstrip patch antenna
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KR100586963B1 (ko) 2004-05-04 2006-06-08 삼성전기주식회사 유전체 형성용 조성물, 이로 제조된 캐패시터층 및 이를포함하는 인쇄회로기판
EP1788040B1 (fr) * 2004-08-06 2012-06-06 Mitsubishi Gas Chemical Company, Inc. Poudre ultrafine isolée et matériau composite de résine à constante diélectrique élevée
KR100674848B1 (ko) * 2005-04-01 2007-01-26 삼성전기주식회사 고유전율 금속-세라믹-폴리머 복합 유전체 및 이를 이용한임베디드 커패시터의 제조 방법
US20060258327A1 (en) * 2005-05-11 2006-11-16 Baik-Woo Lee Organic based dielectric materials and methods for minaturized RF components, and low temperature coefficient of permittivity composite devices having tailored filler materials
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JP4873160B2 (ja) * 2007-02-08 2012-02-08 トヨタ自動車株式会社 接合方法
JP4510116B2 (ja) * 2008-06-20 2010-07-21 富士通株式会社 キャパシタの製造方法、構造体、及びキャパシタ
TWI394189B (zh) * 2009-06-04 2013-04-21 Ind Tech Res Inst 電容基板結構
JP5644130B2 (ja) 2009-07-28 2014-12-24 三菱瓦斯化学株式会社 絶縁化超微粉末およびその製造方法、並びに高誘電率樹脂複合材料
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JP2013545291A (ja) * 2010-10-12 2013-12-19 アプリコット マテリアルズ テクノロジーズ，エル．エル．シー． セラミックコンデンサー及び製造方法
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US20070060672A1 (en) * 2003-05-19 2007-03-15 Yasushi Kumashiro Insulation material, film, circuit board and method of producing them
US7700185B2 (en) * 2003-05-19 2010-04-20 Hitachi Chemical Company, Ltd. Insulation material, film, circuit board and method of producing them
US20070116976A1 (en) * 2005-11-23 2007-05-24 Qi Tan Nanoparticle enhanced thermoplastic dielectrics, methods of manufacture thereof, and articles comprising the same
US20100044069A1 (en) * 2008-08-22 2010-02-25 Usa As Represented By The Administrator Of The National Aeronautics And Space Administration Asymmetric Dielectric Elastomer Composite Material
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CN104985896A (zh) * 2015-06-26 2015-10-21 广东工业大学 高介电常数的陶瓷-聚合物复合材料及其制备方法
US11198263B2 (en) 2018-03-22 2021-12-14 Rogers Corporation Melt processable thermoplastic composite comprising a multimodal dielectric filler

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US20020168510A1 (en) 2002-11-14
JP4019725B2 (ja) 2007-12-12
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US20030030999A1 (en) 2003-02-13
TWI237374B (en) 2005-08-01
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JP2002334612A (ja) 2002-11-22
US6924971B2 (en) 2005-08-02

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