US6605152B2 - Catch pan for melt leakage in apparatus for pulling single crystal - Google Patents

Catch pan for melt leakage in apparatus for pulling single crystal Download PDF

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Publication number
US6605152B2
US6605152B2 US09/959,593 US95959301A US6605152B2 US 6605152 B2 US6605152 B2 US 6605152B2 US 95959301 A US95959301 A US 95959301A US 6605152 B2 US6605152 B2 US 6605152B2
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Prior art keywords
catch pan
melt
single crystal
melt leakage
crystal pulling
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Expired - Lifetime
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US09/959,593
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US20020157602A1 (en
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Koji Mizuishi
Tomohiko Ohta
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Assigned to SHIN-ETSU HANDOTAI CO., LTD. reassignment SHIN-ETSU HANDOTAI CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MIZUISHI, KOJI, OHTA, TOMOHIKO
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B15/00—Drawing glass upwardly from the melt
    • C03B15/02—Drawing glass sheets
    • C03B15/10—Drawing glass sheets multi-layer glass sheets or glass sheets coated with coloured layers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Definitions

  • the present invention relates to a structure of an apparatus for pulling a single crystal by the Czochralski method (CZ method), which is for growing a single crystal ingot by the CZ method.
  • CZ method Czochralski method
  • this CZ method single crystal pulling apparatus 30 is provided with a chamber (pulling chamber) 31 , crucible 32 provided in the chamber 31 , heater 34 disposed around the crucible 32 , crucible holding shaft 33 for rotating the crucible 32 and rotation mechanism therefor (not shown), seed chuck 6 for holding a silicon seed crystal 5 , wire 7 for pulling the seed chuck 6 , and winding mechanism (not shown) for rotating and winding the wire 7 and constituted by them.
  • a quartz crucible for accommodating a silicon melt (molten metal) 2 is provided inside, and a graphite crucible is provided outside the quartz crucible. Further, heater insulating material 35 surrounds the outside of the heater 34 .
  • a silicon polycrystal raw material of high purity is melted in the crucible 32 by heating it to a temperature higher than the melting point (about 1420° C.). Then, a tip end of the seed crystal 5 is brought into contact with or immersed into the surface 3 of the silicon melt 2 at its approximate center portion by reeling out the wire 7 . Then, the crucible-holding shaft 33 is rotated in an optional direction, and the seed crystal 5 is simultaneously pulled upwardly by winding up the wire 7 with rotating the wire to a direction reverse to the rotation direction of the crucible 32 to start the growing of single crystal. Thereafter, a single crystal ingot 1 approximately in a cylindrical shape can be obtained by appropriately controlling the pulling rate of the wire 7 and the melt temperature.
  • both of the quartz crucible and the graphite crucible provided in the aforementioned single crystal pulling apparatus have high heat resistance, they have a drawback that they are rather brittle and thus shows poor shock resistance. For this reason, when polycrystal raw material is charged in a crucible and melted by heating in pulling of a single crystal, a lump of the polycrystal may collapse during the melting and the crucible may be broken by its impact to generate cracks, through which the melt may leak.
  • the multiple CZ method is widely used to attain efficient single crystal growth, in which multiple single crystal ingots are obtained from a single quarts crucible by not solidifying the melt after pulling of a single crystal and charging the polycrystal raw material again, it is expected that the silicon melt may flow out of the crucible during the operation because of breakage of the crucible, scattering of the melt and so forth upon the recharging of the polycrystal raw material.
  • the pulling apparatus is largely swung to right and left and thus the melt in the crucible may flow outside of the crucible.
  • the crucible may be broken and the substantially whole amount of the melt contained in the crucible may flow out.
  • the melt at a high temperature flows out or scatters to the outside of the crucible as described above, it reaches the bottom of the chamber from the circumference of the crucible and erode the bottom portion of the chamber, metal parts such as terminal area for heater and the crucible holding shaft, crucible driving apparatus, lower piping for cooling water provided for cooling the chamber and so forth.
  • metal parts such as terminal area for heater and the crucible holding shaft, crucible driving apparatus, lower piping for cooling water provided for cooling the chamber and so forth.
  • the silicon melt heated to a high temperature shows strong erosion action against metals, it is also expected that the piping for cooling water may be eroded.
  • the melt overflowed outside of the chamber will harmfully affect operators and facilities.
  • the present invention is accomplished in view of such problems of the conventional techniques, and its major object is to provide a catch pan for melt leakage provided in a CZ method single crystal pulling apparatus, which can, even if a melt flows out of the crucible by a certain possible cause, prevent the melt flowed out from reaching the lower mechanisms including metal parts, piping and so forth, and thereby prevent bad influences on operators and peripheral equipments.
  • the catch pan for melt leakage in a single crystal pulling apparatus is a catch pan for melt leakage provided under a crucible at a bottom portion of a chamber in a single crystal pulling apparatus based on the Czochralski method, wherein the catch pan for melt leakage comprises at least a bottom portion and a barrel portion, and the bottom portion and a barrel portion are connected by screw-fitting or by using a tap bolt.
  • a catch pan for melt leakage is constituted as described above, even a large catch pan can be produced with parts made from smaller raw materials compared with integrally formed product, because it is assembled from at least two parts, the bottom portion and the barrel portion, by screw-fitting or by using a tap bolt. Therefore, material yield of graphite material is markedly improved, and thus the production cost can be reduced. Further, even if the melt flows out of the crucible and accumulates in the catch pan, the catch pan is not separated into each of its parts, for example, the barrel portion does not float, and thus leakage of the melt out of the catch pan can surely be obviated.
  • the catch pan for melt leakage can comprise a catch pan body made of graphite material and a heat insulating material adhered to an internal surface of the body.
  • the catch pan is constituted as described above, strength and configurational precision of the catch pan is secured by the catch pan body made of the graphite material, and heat transfer from the leaked and accumulated melt at a high temperature is suppressed by the heat insulating material adhered to the internal surface of the body. Thus, thermal load on the chamber can be reduced, and breakage of the chamber can be obviated.
  • the graphite material can comprise isotropic graphite
  • the heat insulating material can comprise a molding material made of carbon fibers.
  • the catch pan would have excellent strength and heat resistance as well as high configurational precision and excellent configurational stability. Therefore, it can be a catch pan for melt leakage that can be made also by screw-fitting. Further, if a molding material made of carbon fibers is used as the heat insulating material, the heat insulating material can be integrally formed in a shape fitted to the shape of the catch pan body made of graphite material, or it can be easily formed by separately molding each of its parts and jointing them.
  • the catch pan for melt leakage preferably has an internal volume that can accommodate at least the whole melted raw material.
  • a single crystal pulling apparatus provided with such a catch pan for melt leakage as described above, even if the melt flows out of the crucible, it can be prevented from reaching the lower mechanisms including metal parts, piping and so forth, and a single crystal can be pulled by a single crystal pulling method utilizing the single crystal pulling apparatus provided with the catch pan for melt leakage without giving bad influences on operators or peripheral equipments.
  • the catch pan for melt leakage which is preferably made of isotropic graphite and adhered with a heat insulating material, and it can be prevented from leaking to the outside. Therefore, there can be obtained an advantage that breakage of chamber can preliminarily be obviated by preventing the melt from reaching metal parts such as piping for cooling water.
  • the catch pan for melt leakage is assembled by connecting at least a bottom portion and a barrel portion, raw materials can be easily supplied at a low cost, and it can meet to production of a larger single crystal pulling apparatus. Moreover, since the catch pan has a simple structure and it can be easily produced, the cost can be reduced. Furthermore, since a heat insulating material is attached inside the catch pan, heat quantity effused from the catch pan is small even if melt leakage occurs. Therefore, thermal load on the chamber can be reduced and thus breakage of the chamber and so forth can be obviated.
  • FIG. 1 is an explanatory view showing a single crystal pulling apparatus according to an embodiment of the present invention: (a) schematic sectional view, and (b) partial plan view.
  • FIG. 2 is an explanatory view showing an example of the catch pan for melt leakage according to an embodiment of the present invention: (a) schematic sectional view of catch pan for melt leakage, (b) partial sectional view showing a connection scheme of a bottom portion and a barrel portion, (b′) partial sectional view showing another connection scheme of a bottom portion and a barrel portion, and (c) partial sectional view showing an example of shaft sleeve.
  • FIG. 3 is an explanatory view showing a single crystal pulling apparatus used in the conventional CZ method.
  • FIG. 4 is an explanatory view showing an experimental method for examining the effectiveness of the connection schemes of a bottom portion and a barrel portion in catch pans for melt leakage used in Example 1 and Comparative Example.
  • FIG. 1 ( a ) is a longitudinal sectional view of an essential part of a single crystal pulling apparatus provided with a catch pan for melt leakage according to the present invention
  • FIG. 1 ( b ) is a partial plan view of a bottom portion
  • FIG. 2 ( a ) is a longitudinal sectional view showing an essential part of an example of a catch pan for melt leakage according to the present invention
  • FIGS. 2 ( b ), ( b′ ) and ( c ) are detail views showing the connection schemes of a bottom portion and a barrel portion in catch pans for melt leakage.
  • constitutional members having the same functions as in the conventional example are given with the same signs.
  • a chamber 31 of the CZ method single crystal pulling apparatus 10 is of a sealed tank type, and cooling water is flown in piping or jacket (not shown) for cooling water at a peripheral wall.
  • a crucible 32 is provided in the chamber 31 , and the apparatus is further provided with a heater 34 disposed around the crucible 32 , a crucible holding shaft 33 for rotating the crucible 32 and a rotating mechanism therefor (not shown) and constituted by these members.
  • an atmospheric gas exhausting pipe 13 is provided at a lower position of the chamber 31 . Although this exhausting pipe is provided on the lateral side of the chamber, it may be provided in the bottom portion.
  • a quartz crucible 32 a is provided inside, i.e., on the side for accommodating the raw material silicon melt (molten metal) 2 , and a graphite crucible 32 b is provided outside the quartz crucible for protecting it.
  • Electrodes 14 for electrifying the heater are provided under the heater 34 , and connected to an electric power source provided outside the apparatus. Upper portions of these electrodes 14 may be made of carbon, so that metal portions should not be exposed inside the furnace at a high temperature.
  • a catch pan for melt leakage 15 is provided in contact with inner wall surface 31 b of the bottom portion 31 a of the chamber 31 .
  • This catch pan for melt leakage 15 comprises a bottom portion 15 a and a barrel portion 15 b as shown in FIG. 2 ( a ), and they are connected at a bolt connection portion 17 (refer to FIG. 2 ( b )) or a screw-fitting portion 18 (refer to FIG. 2 ( b′ )).
  • a bolt connection portion 17 (refer to FIG. 2 ( b ))
  • a screw-fitting portion 18 (refer to FIG. 2 ( b′ )).
  • shaft sleeves 15 c in which members penetrating the chamber bottom portion 31 a and the melt leakage catch pan bottom portion 15 a such as the crucible holding shaft 33 and the electrodes 14 for electrifying the heater are passed through, can be assembled with the bottom portion 15 a by screwing (refer to FIG. 2 ( c )) to secure sufficient strength and sealing. They preferably have the same height as the barrel portions 15 b , and the inner volume of the catch pan 15 for melt leakage, which is defined by the bottom portions 15 a and the barrel portion 15 b , is determined so that it should be larger than the volume of the total melted raw material 2 .
  • the inner volume of the catch pan defined by the height from the bottom to the upper ends of the shaft sleeves should be larger than the volume of the total melted raw material.
  • the inner volume of the catch pan for melt leakage is preferably larger than the volume of the total melt raw material observed when it is solidified.
  • graphite materials are suitable from the viewpoints of heat resistance, corrosion resistance and workability.
  • isotropic graphite is preferred. If isotropic graphite is used for the graphite material as described above, the catch pan would have, in particular, excellent strength and heat resistance. Thus, generation of cracks and so forth due to thermal shock given by leakage of melt and so forth can be prevented.
  • high configurational precision, excellent configurational stability and excellent workability can be obtained, and thus the catch pan can be assembled by screwing so that it should not suffer from leakage of the melt.
  • the catch pan for melt leakage 15 of the present invention comprises the bottom portion 15 a and barrel portion 15 b and they are connected by screw-fitting or by using a tap bolt as described above, the catch pan shows advantages different from those of an integrally formed seamless product.
  • the bottom portion and the barrel portion are each designed to be constituted by a plurality of members and assembled by using tap bolts, it will be more effective.
  • the barrel portion is constituted by four members, and they are assembled at tap bolt connection portions 17 .
  • a further characteristic of the catch pan for melt leakage 15 of the present invention is that the heat insulating material 16 is adhered on the internal surface of the catch pan body, and the heat insulating material is constituted by a molding material made of carbon fibers.
  • a molding material made of carbon fibers is used for the heat insulating material, a molding material fitted to the shapes of the body of the catch pan for melt leakage made of graphite and the shaft sleeve can be easily produced. Further, the molded product made of carbon fibers can be formed as an integrally molded product or a product obtained by separately forming members and connecting them. Since the heat insulating material is adhered, heat loss from the melt at a high temperature, which has leaked from the crucible and accumulated, is reduced, and thus thermal load on the chamber can be reduced. Therefore, damages of the chamber can be prevented.
  • the silicon polycrystal raw material charged in the crucible 32 is melted by the heater 34 to form the melted raw material 2 .
  • a seed crystal attached to a seed holder suspended by a wire from above is immersed into the melted raw material 2 , and then while rotating the wire and the crucible 32 , the seed crystal is pulled at a predetermined rate. Thereby, a predetermined single crystal ingot 1 can be grown.
  • the melt 2 flows out of the crucible 32 through the cracks and the melt 2 flowed out runs downwardly on the outer surface of the crucible and falls to the bottom portion 31 a of the chamber 31 .
  • the catch pan for melt leakage 15 is disposed in contact with the internal wall surface 31 b of the bottom portion of the chamber, and therefore the melt 2 flowed out can be accommodated by the catch pan for melt leakage 15 .
  • the catch pan for melt leakage 15 is formed by assembling the bottom portion 15 a and the side portion 15 b by screw-fitting or by using tap bolts so as not to form any gap, the accommodated melt 2 does not flow out to another site.
  • the catch pan for melt leakage 15 has an inner volume that can accommodate the whole quantity of the melted raw material 2 , the accommodated melt 2 does not overflow from the catch pan for melt leakage 15 . Therefore, the melt 2 can surely be prevented from reaching the lower mechanisms of the crucible 32 , and the melt flowed out can surely be prevented from overflowing from the chamber of the pulling apparatus to badly affect operators.
  • miniatures of three kinds of catch pan for melt leakage were produced from isotropic graphite material for different connection schemes of the bottom portion and the barrel portion, and horizontally provided in a quartz crucible having a diameter of 24 inches in a single crystal pulling apparatus.
  • Granular polycrystal raw material was charged in each of the catch pans for melt leakage, heated by a heater and maintained at 1450° C. for 1 hour to investigate presence or absence of leakage of the melt.
  • Example 1 As for the connection scheme of the bottom portion and the barrel portion of the catch pans for melt leakage, the bottom portion was screwed into the barrel portion as Example 1 (1) (screw-fitting scheme), the bottom portion was connected to the barrel portion by using tap bolts as Example 1 (2), and the bottom portion was fitted into the barrel portion as comparative Example (3).
  • catch pan for melt leakage 15 adhered with a heat insulating material 16 as shown in FIG. 1 was produced and installed on a single crystal pulling apparatus to examine effectiveness of the catch pan for melt leakage.
  • the present invention was explained by exemplifying growing of a silicon single crystal, the present invention is not limited only to the production of a silicon single crystal.
  • the present invention can be applied to any of single crystal growing apparatuses, and it can of course be used for single crystal growing apparatuses for compound semiconductors using the LEC method and so forth.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
US09/959,593 2000-03-03 2001-02-23 Catch pan for melt leakage in apparatus for pulling single crystal Expired - Lifetime US6605152B2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-059400 2000-03-03
JP2000-59400 2000-03-03
JP2000059400 2000-03-03
PCT/JP2001/001371 WO2001064976A1 (fr) 2000-03-03 2001-02-23 Godet de recuperation de fuites de bain fondu pour appareil de tirage vertical de monocristaux

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US6605152B2 true US6605152B2 (en) 2003-08-12

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US (1) US6605152B2 (fr)
EP (1) EP1191130B1 (fr)
JP (1) JP3741043B2 (fr)
KR (1) KR100725672B1 (fr)
DE (1) DE60140507D1 (fr)
TW (1) TW527449B (fr)
WO (1) WO2001064976A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110211995A1 (en) * 2007-07-26 2011-09-01 Calisolar, Inc. Method and system for forming a silicon ingot using a low-grade silicon feedstock
CN102400231A (zh) * 2011-11-15 2012-04-04 宁夏日晶新能源装备股份有限公司 单晶炉热场中轴挡料罩结构
US20160258684A1 (en) * 2011-08-26 2016-09-08 Consarc Corporation Purification of a metalloid by consumable electrode vacuum arc remelt process

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Publication number Priority date Publication date Assignee Title
TW200930851A (en) * 2008-01-03 2009-07-16 Green Energy Technology Inc Crystal growth furnace having guiding structure for overflow slurry
KR101327991B1 (ko) * 2011-08-31 2013-11-13 한국화학연구원 실리콘 누출방지 시스템을 갖춘 실리콘 잉곳 제조 장치
JP5891959B2 (ja) 2012-06-04 2016-03-23 信越半導体株式会社 単結晶製造装置
JP2014091656A (ja) * 2012-11-05 2014-05-19 Shin Etsu Handotai Co Ltd 単結晶製造装置の湯漏れ検出器
JP6610226B2 (ja) * 2015-12-08 2019-11-27 信越半導体株式会社 半導体単結晶棒の製造装置

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US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
JP3012299U (ja) 1994-12-09 1995-06-13 東洋炭素株式会社 シリコン単結晶引上げ用黒鉛ルツボ
JPH08259378A (ja) 1995-03-27 1996-10-08 Ibiden Co Ltd 単結晶引上装置用ヒーター
JPH09221385A (ja) 1996-02-13 1997-08-26 Sumitomo Sitix Corp 単結晶引き上げ装置
JP2551383Y2 (ja) 1990-09-18 1997-10-22 日本カーボン株式会社 メルトレシーブ容器
JPH10182288A (ja) 1996-12-26 1998-07-07 Ibiden Co Ltd シリコン単結晶引き上げ装置用の炭素製受皿
US6308767B1 (en) * 1999-12-21 2001-10-30 General Electric Company Liquid metal bath furnace and casting method

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TW531573B (en) * 1996-06-27 2003-05-11 Toyo Tanso Co Single crystal pulling crucible and production method thereof

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JP2551383Y2 (ja) 1990-09-18 1997-10-22 日本カーボン株式会社 メルトレシーブ容器
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
JP3012299U (ja) 1994-12-09 1995-06-13 東洋炭素株式会社 シリコン単結晶引上げ用黒鉛ルツボ
JPH08259378A (ja) 1995-03-27 1996-10-08 Ibiden Co Ltd 単結晶引上装置用ヒーター
JPH09221385A (ja) 1996-02-13 1997-08-26 Sumitomo Sitix Corp 単結晶引き上げ装置
JPH10182288A (ja) 1996-12-26 1998-07-07 Ibiden Co Ltd シリコン単結晶引き上げ装置用の炭素製受皿
US6308767B1 (en) * 1999-12-21 2001-10-30 General Electric Company Liquid metal bath furnace and casting method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110211995A1 (en) * 2007-07-26 2011-09-01 Calisolar, Inc. Method and system for forming a silicon ingot using a low-grade silicon feedstock
US8882912B2 (en) * 2007-07-26 2014-11-11 Silicor Materials Inc. Method and system for forming a silicon ingot using a low-grade silicon feedstock
US20160258684A1 (en) * 2011-08-26 2016-09-08 Consarc Corporation Purification of a metalloid by consumable electrode vacuum arc remelt process
CN102400231A (zh) * 2011-11-15 2012-04-04 宁夏日晶新能源装备股份有限公司 单晶炉热场中轴挡料罩结构

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US20020157602A1 (en) 2002-10-31
EP1191130B1 (fr) 2009-11-18
KR20020008171A (ko) 2002-01-29
TW527449B (en) 2003-04-11
EP1191130A4 (fr) 2008-02-27
KR100725672B1 (ko) 2007-06-08
EP1191130A1 (fr) 2002-03-27
JP3741043B2 (ja) 2006-02-01
WO2001064976A1 (fr) 2001-09-07
DE60140507D1 (de) 2009-12-31

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