US5736021A - Electrically floating shield in a plasma reactor - Google Patents

Electrically floating shield in a plasma reactor Download PDF

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Publication number
US5736021A
US5736021A US08/677,760 US67776096A US5736021A US 5736021 A US5736021 A US 5736021A US 67776096 A US67776096 A US 67776096A US 5736021 A US5736021 A US 5736021A
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US
United States
Prior art keywords
shield
reactor
target
chamber
electrically floating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US08/677,760
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English (en)
Inventor
Peijun Ding
Zheng Xu
Jianming Fu
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to US08/677,760 priority Critical patent/US5736021A/en
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FU, JIANMING, DING, PEIJUN, XU, ZHENG
Priority to TW086108576A priority patent/TW346639B/zh
Priority to JP17190997A priority patent/JP4233618B2/ja
Priority to SG1997002340A priority patent/SG71027A1/en
Priority to EP97304912A priority patent/EP0818803A3/fr
Priority to KR1019970031428A priority patent/KR100517474B1/ko
Application granted granted Critical
Publication of US5736021A publication Critical patent/US5736021A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32504—Means for preventing sputtering of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles

Definitions

  • the invention generally plasma reactors.
  • the invention relates to a shield for protecting the walls of the reactor chamber.
  • PVD physical vapor deposition
  • This deposition process is performed in a plasma reactor 10 illustrated in schematic cross section in FIG. 1.
  • This reactor 10 is similar to that disclosed by Somekh et al. in U.S. Pat. No. 5,294,320. It includes a PVD target 12, which in conjunction with a chamber wall 14 and other sealing members, forms a vacuum chamber.
  • the PVD target 12 is composed, for at least the portion facing the central portion of the vacuum chamber, of the material to be sputtered, for example, aluminum.
  • a substrate 16 whose surface is to be sputter deposited is supported on a pedestal 18 positioned in opposition to the target 12.
  • a gas supply system 20 supplies a controlled flow of various gases into the vacuum chamber while a vacuum pump 21 maintains a vacuum level at a fixed gas flow.
  • the vacuum chamber is filled with non-reactive argon to a reduced pressure. Note however that in some applications a reactive gas is additionally filled into the chamber to effect reactive sputtering.
  • the conductive chamber wall 14, usually made of aluminum or stainless steel, is generally grounded while a DC power supply 24 applies a negative voltage of about -500V to the target 12.
  • An insulating ring 26 between the target 12 and the chamber wall 14 allow their differential biasing. The electrical bias causes the argon to discharge and form a plasma of positively charged argon ions and negatively charged electrons in the space between the target 12 and the substrate 16.
  • the argon ions are electrically attracted to the negatively charged target 12 and, strike it at high enough energy to sputter target particles from the target 12.
  • the sputtered material travels ballistically, generally omni-directionally, and some fraction hit the substrate 16 to be deposited thereon as a thin film.
  • the pedestal 18 and thus the substrate 16 is usually left electrically electrically floating, although in some situations it is RF biased.
  • a sizable fraction also would hit the chamber walls 14 to deposit a thin film thereon.
  • the film thickness progressively increases as more substrates 16 are processed until it becomes thick enough that it tends to flake off, creating particles in a chamber that needs to be ultra-clean.
  • the chamber wall 14 can be periodically cleaned, the cleaning is time consuming, thus costing both system downtime and operator time.
  • the favored solution places a generally cylindrical shield 22 within the plasma reactor 10 to intersect any direct path between the target 12 and the chamber wall 14.
  • the shield 22 is generally electrically grounded, usually by physical attachment to the chamber wall 14. Thereby, sputter particles travelling toward the chamber wall 14 are intercepted by the shield 22 and deposit thereupon.
  • the shield 22 eventually builds up a thick layer of the sputtered material.
  • the shield 22 is not cleaned in situ but instead is designed to be easily and quickly removed and replaced by a fresh shield 22.
  • the shields may be discarded, or they may be cleaned off line, perhaps by immersion in a cleaning solution, and thereafter reused. In any case, the use of shields significantly reduces the expense of reconditioning the reactor 10 to reduce the particle count.
  • One of the more challenging applications of PVD is to fill narrow holes formed in the substrate, for example, an inter-level via or a contact through a dielectric layer to the underlying silicon.
  • the width of these apertures is being pushed below 0.25 ⁇ m, and their aspect ratio, that is, the ratio of their depth to their height, is being pushed to above 5.
  • the pressure within the sputtering reactor 10 should be reduced to reduce the gas collisions.
  • the conventional design shown in FIG. 1 limits the pressure to be above approximately 1.5 milliTorr. Below this pressure, the plasma collapses. We believe that the effect is due to the conventional shield 22 readily collecting electrons from the vicinity of the target 12.
  • a plasma discharge is maintained by a chain reaction between electrons and neutral argon of the form
  • the positively charged argon is attracted to the target, but the additionally generated electron is enough to sustain the discharge if the electron loss via several mechanisms is not too large.
  • the electrons are more likely to diffuse or be attracted to the shield 22 or other chamber components before they strike another neutral argon to sustain the reaction.
  • the reaction is not self-sustaining, and the plasma collapses.
  • a dark-space shield is disposed generally even with and in back of the target to prevent components other than the target from being sputtered by the ionized argon atoms. It does not act as a protective shield interposed between the front of the target and the chamber walls.
  • the invention can be summarized as a protective shield in a plasma reactor that is electrically floating.
  • the shield collects some electrons from the plasma, but eventually charges sufficiently negative that it begins to repel any additional electrons.
  • the shield can be formed in two parts, the part closer to the target being electrically floating while the part more distant from the target is grounded.
  • FIG. 1 is a schematical cross sectional view of a plasma reactor including a conventional shield.
  • FIG. 2 is a schematical cross sectional view of a plasma reactor including a shield of the invention.
  • FIG. 3 is a detailed cross sectional view of a portion of a plasma reactor and an embodiment of the inventive shield.
  • FIG. 4 is a graph showing minimum gas flows at which a plasma could be maintained with the shield grounded or floating.
  • a PVD plasma reactor 10, illustrated in FIG. 2 incorporates one embodiment of the protective shield of the invention.
  • a shield 30 adjacent to the target 12 is left electrically floating.
  • a second shield 32 closer to the substrate 16 is electrically grounded in the conventional fashion.
  • the floating shield 30 either alone or in conjunction with the grounded shield 32 is interposed between the target 12 and most if not all of the chamber wall 14 so as to protect it from being sputter deposited.
  • the lower, grounded shield 32 has a larger diameter than the upper, floating shield 30, and the two shields 30, 32 axially overlap so as to produce a baffle structure.
  • the floating shield 30 is initially at zero potential and thus collects some electrons from the plasma. These electrons have no current path to flow away from the floating shield 30. As a result, the electrons collect on the floating shield 30, and it begins to develop a negative potential. As the negative potential increases in magnitude, the floating shield 30 begins to progressively more repel the electrons. At some point, equilibrium is reached, and no more electrons are extracted from the plasma to the floating shield 30. We have found that the floating shield 30 attains a steady state voltage of between about -20V to -120V dependent upon gas flow and target voltage.
  • the floating shield serves the same purpose as the conventional grounded shield in protecting the chamber walls from deposition. Once the floating shield has become coated with a dangerously thick layer of sputtered material, it can be removed and replaced by a fresh floating shield. The replacement is facilitated by the lack of electrical connections. Like the grounded shield, the floating shield can be cleaned and reused, or it can be considered to be a consumable.
  • FIG. 3 A detailed cross sectional view of a portion of the PVD reactor 10 incorporating the inventive floating shield 30 is shown in FIG. 3.
  • the PVD target 12 is fixed to a target backing plate 40, behind which are located unillustrated scanning magnets and the chamber cover.
  • a first O-ring 42 establishes a vacuum seal between the target backing plate 40 and an insulator 26 while a second O-ring 48 maintains the vacuum seal between the insulator 26 and an adapter 50 forming part of the chamber wall 14.
  • An annular ledge 52 extends radially inwardly into the vacuum chamber.
  • the grounded shield 32 is usually formed of a metal such as aluminum or stainless steel and at its upper end has an outwardly extending rim 56 and a downwardly extending skirt 54.
  • the rim 56 is supported on the ledge 52 of the wall adapter 50 and is electrically connected to it by unillustrated screws so as to be electrically grounded.
  • the grounded shield 32 thus protects the wall adapter 50 and other parts of the lower chamber wall 14 from the PVD flux.
  • An annular insulating ceramic spacer 60 rests on top of the rim 56 of the grounded shield 32 and in turn supports the annular floating shield 30 formed of stainless steel.
  • the floating shield 30 is sized so that no contact with the chamber insulator 26 is intended.
  • the floating shield 30 has both an upper end 62 and a lower knob 64 resting on the ceramic spacer 60 which are sized so that, even if the upper end 62 comes into contact with the chamber insulator 26, the knob 64 still does not contact the wall adapter 50.
  • the floating shield 30 and the ceramic spacer 60 do not establish a current path so that they can be gravitationally held rather than rigidly attached, but insulating affixing means can be used to rigidly establish the position of the floating shield 30.
  • the upper end 62 of the floating shield extends upwardly to behind the front of the target 12 so as to protect the chamber insulator 26 from being sputter coated.
  • a gap 66 is maintained between the floating shield 30 and the target 12 and its backing plate 40, and another gap 68 is maintained between the floating and grounded shields 30, 30. Thereby, the floating shield 30 is left electrically floating with no electrical conduction path to ground.
  • the floating shield 30 is shaped as a solid body with chamfered corners 70 in areas potentially exposed to the plasma so as to reduce the chance of arcing. It also includes a downwardly extending lip 72 that slightly axially overlaps the skirt 58 of the grounded shield 30 so as to protect the ceramic insulator 60.
  • a metal spacer was substituted for the insulating ceramic spacer 60 so that the metal floating shield 30 of FIG. 3 was instead grounded to the adapter wall 50.
  • the argon plasma was maintained at an argon flow of 17 sccm but was extinguished at 16 sccm.
  • the measured chamber pressure was between 0.5 and 0.6 milliTorr.
  • the floating of the shield allowed the minimum chamber pressure supporting a plasma to be reduced by about 27% as measured by the insensitive pressure gauge or by 35% as measured indirectly by the more sensitive mass flow controller.
  • FIG. 4 A wider characterization is presented in FIG. 4. With the metal floating shield 30 either grounded or left electrically floating, the minimum gas flow was determined for which a plasma was maintained at a number of values of the sputtering power. Trace 80 shows the minimum gas flow for a grounded shield, and trace 82 shows it for an electrically floating shield. For all sputtering powers, a plasma could be maintained at a lower gas flow with a floating shield than with a grounded shield. It is assumed that the chamber pressures varied proportionately with the gas flow.
  • the invention is effective at reducing the minimum pressure in a plasma reactor at which a plasma is maintained. As a result, the bottom coverage can be improved.
  • a floating shield can be advantageously applied to other types of plasma reactors, including those used for etching and for chemical vapor deposition (CVD).
  • the generation of the plasma can occur somewhat differently, for example, the bias of the electrodes may be reversed.
  • the RF energy is inductively coupled into the plasma, or microwave energy is supplied from a remote microwave source, or the plasma is supplied from a remote plasma source.
  • the physical structure of the floating shield can be modified in several ways varying from that presented. Its lip can be extended into a skirt extending downwardly to the pedestal. That is, the grounded shield can be replaced by an extended floating shield.
  • the floating shield can be made of other metals than stainless steel or of a ceramic having a metal coating on the surface facing the plasma. Indeed, the floating shield could be made entirely of an insulating ceramic since no conduction path to ground is required. However, a fully ceramic shield will collect different amounts of negative charge on its different portions so that a voltage distribution will develop.
  • a floating shield thus is an inexpensive expedient in reducing the allowed chamber pressure, and thus in the case of PVD to provide better bottom coverage for high aspect ratio holes.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
US08/677,760 1996-07-10 1996-07-10 Electrically floating shield in a plasma reactor Expired - Lifetime US5736021A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US08/677,760 US5736021A (en) 1996-07-10 1996-07-10 Electrically floating shield in a plasma reactor
TW086108576A TW346639B (en) 1996-07-10 1997-06-19 Electrically floating shield in a plasma reactor
JP17190997A JP4233618B2 (ja) 1996-07-10 1997-06-27 プラズマ反応装置における電気的に浮遊したシールド
SG1997002340A SG71027A1 (en) 1996-07-10 1997-07-01 Electrically floating shield in a plasma reactor
EP97304912A EP0818803A3 (fr) 1996-07-10 1997-07-04 Ecran électriquement flottant dans un réacteur à plasma
KR1019970031428A KR100517474B1 (ko) 1996-07-10 1997-07-08 플라즈마리액터에서의전기적플로팅실드

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US08/677,760 US5736021A (en) 1996-07-10 1996-07-10 Electrically floating shield in a plasma reactor

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US5736021A true US5736021A (en) 1998-04-07

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US (1) US5736021A (fr)
EP (1) EP0818803A3 (fr)
JP (1) JP4233618B2 (fr)
KR (1) KR100517474B1 (fr)
SG (1) SG71027A1 (fr)
TW (1) TW346639B (fr)

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US6358376B1 (en) 2000-07-10 2002-03-19 Applied Materials, Inc. Biased shield in a magnetron sputter reactor
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US6468405B1 (en) 1999-07-15 2002-10-22 Seagate Technology Llc Sputtering target assembly and method for depositing a thickness gradient layer with narrow transition zone
DE10122070A1 (de) * 2001-05-07 2002-11-21 Texas Instruments Deutschland Kathodenzerstäubungskammer zum Aufbringen von Material auf der Oberfläche einer in der Kammer befindlichen Halbleiterscheibe
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JP4233618B2 (ja) 2009-03-04
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SG71027A1 (en) 2000-03-21
KR980011765A (ko) 1998-04-30
EP0818803A2 (fr) 1998-01-14
TW346639B (en) 1998-12-01

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