SG71027A1 - Electrically floating shield in a plasma reactor - Google Patents

Electrically floating shield in a plasma reactor

Info

Publication number
SG71027A1
SG71027A1 SG1997002340A SG1997002340A SG71027A1 SG 71027 A1 SG71027 A1 SG 71027A1 SG 1997002340 A SG1997002340 A SG 1997002340A SG 1997002340 A SG1997002340 A SG 1997002340A SG 71027 A1 SG71027 A1 SG 71027A1
Authority
SG
Singapore
Prior art keywords
plasma reactor
electrically floating
floating shield
shield
electrically
Prior art date
Application number
SG1997002340A
Other languages
English (en)
Inventor
Peijun Ding
Zheng Xu
Jian Ming Fu
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG71027A1 publication Critical patent/SG71027A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32504—Means for preventing sputtering of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
SG1997002340A 1996-07-10 1997-07-01 Electrically floating shield in a plasma reactor SG71027A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/677,760 US5736021A (en) 1996-07-10 1996-07-10 Electrically floating shield in a plasma reactor

Publications (1)

Publication Number Publication Date
SG71027A1 true SG71027A1 (en) 2000-03-21

Family

ID=24720009

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997002340A SG71027A1 (en) 1996-07-10 1997-07-01 Electrically floating shield in a plasma reactor

Country Status (6)

Country Link
US (1) US5736021A (fr)
EP (1) EP0818803A3 (fr)
JP (1) JP4233618B2 (fr)
KR (1) KR100517474B1 (fr)
SG (1) SG71027A1 (fr)
TW (1) TW346639B (fr)

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JP5547366B2 (ja) * 2007-03-29 2014-07-09 東京エレクトロン株式会社 プラズマ処理装置
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JP4918147B2 (ja) * 2010-03-04 2012-04-18 キヤノンアネルバ株式会社 エッチング方法
CN105177519B (zh) * 2010-10-29 2018-03-27 应用材料公司 用于物理气相沉积腔室的沉积环及静电夹盘
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CN104099575B (zh) * 2014-07-11 2016-08-03 京东方科技集团股份有限公司 一种磁控溅射装置
JP2014241417A (ja) * 2014-07-15 2014-12-25 シャープ株式会社 アルミニウム含有窒化物中間層の製造方法、窒化物層の製造方法および窒化物半導体素子の製造方法
US10879651B2 (en) 2016-06-18 2020-12-29 Molex, Llc Selectively shielded connector channel
KR102351170B1 (ko) * 2018-06-28 2022-01-14 가부시키가이샤 알박 스퍼터 성막 장치
JP7240958B2 (ja) * 2018-09-06 2023-03-16 東京エレクトロン株式会社 プラズマ処理装置
JP7274347B2 (ja) * 2019-05-21 2023-05-16 東京エレクトロン株式会社 プラズマ処理装置
KR20210148458A (ko) 2020-05-28 2021-12-08 삼성디스플레이 주식회사 증착 장치, 및 증착 장치를 이용한 증착 방법
CN114809888B (zh) * 2022-04-06 2023-08-29 常州雷宁电磁屏蔽设备有限公司 等离子电磁屏蔽门

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Also Published As

Publication number Publication date
EP0818803A3 (fr) 1999-03-31
JP4233618B2 (ja) 2009-03-04
JPH1072665A (ja) 1998-03-17
KR100517474B1 (ko) 2005-12-07
KR980011765A (ko) 1998-04-30
US5736021A (en) 1998-04-07
EP0818803A2 (fr) 1998-01-14
TW346639B (en) 1998-12-01

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