SG71027A1 - Electrically floating shield in a plasma reactor - Google Patents

Electrically floating shield in a plasma reactor

Info

Publication number
SG71027A1
SG71027A1 SG1997002340A SG1997002340A SG71027A1 SG 71027 A1 SG71027 A1 SG 71027A1 SG 1997002340 A SG1997002340 A SG 1997002340A SG 1997002340 A SG1997002340 A SG 1997002340A SG 71027 A1 SG71027 A1 SG 71027A1
Authority
SG
Singapore
Prior art keywords
plasma reactor
electrically floating
floating shield
shield
electrically
Prior art date
Application number
SG1997002340A
Other languages
English (en)
Inventor
Peijun Ding
Zheng Xu
Jian Ming Fu
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG71027A1 publication Critical patent/SG71027A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32477Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32504Means for preventing sputtering of the vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32633Baffles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
SG1997002340A 1996-07-10 1997-07-01 Electrically floating shield in a plasma reactor SG71027A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/677,760 US5736021A (en) 1996-07-10 1996-07-10 Electrically floating shield in a plasma reactor

Publications (1)

Publication Number Publication Date
SG71027A1 true SG71027A1 (en) 2000-03-21

Family

ID=24720009

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997002340A SG71027A1 (en) 1996-07-10 1997-07-01 Electrically floating shield in a plasma reactor

Country Status (6)

Country Link
US (1) US5736021A (fr)
EP (1) EP0818803A3 (fr)
JP (1) JP4233618B2 (fr)
KR (1) KR100517474B1 (fr)
SG (1) SG71027A1 (fr)
TW (1) TW346639B (fr)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6073830A (en) * 1995-04-21 2000-06-13 Praxair S.T. Technology, Inc. Sputter target/backing plate assembly and method of making same
US5879523A (en) * 1997-09-29 1999-03-09 Applied Materials, Inc. Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
US6030509A (en) * 1998-04-06 2000-02-29 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for shielding a wafer holder
EP1141997A2 (fr) * 1998-12-21 2001-10-10 Applied Materials, Inc. Depot physique en phase vapeur de matieres semi-conductrices et isolantes
US6122921A (en) * 1999-01-19 2000-09-26 Applied Materials, Inc. Shield to prevent cryopump charcoal array from shedding during cryo-regeneration
US6569294B1 (en) 1999-07-15 2003-05-27 Seagate Technology Llc Sputtering target assembly and method for depositing a thickness gradient layer with narrow transition zone
US6468405B1 (en) 1999-07-15 2002-10-22 Seagate Technology Llc Sputtering target assembly and method for depositing a thickness gradient layer with narrow transition zone
US6398929B1 (en) 1999-10-08 2002-06-04 Applied Materials, Inc. Plasma reactor and shields generating self-ionized plasma for sputtering
US20030116427A1 (en) * 2001-08-30 2003-06-26 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6149784A (en) * 1999-10-22 2000-11-21 Applied Materials, Inc. Sputtering chamber shield promoting reliable plasma ignition
JP3972558B2 (ja) * 2000-06-23 2007-09-05 松下電器産業株式会社 スパッタリング装置
US6358376B1 (en) 2000-07-10 2002-03-19 Applied Materials, Inc. Biased shield in a magnetron sputter reactor
JP4717186B2 (ja) * 2000-07-25 2011-07-06 株式会社アルバック スパッタリング装置
DE10122070B4 (de) * 2001-05-07 2005-07-07 Texas Instruments Deutschland Gmbh Kathodenzerstäubungskammer zum Aufbringen von Material auf der Oberfläche einer in der Kammer befindlichen Halbleiterscheibe
WO2003030224A2 (fr) * 2001-07-25 2003-04-10 Applied Materials, Inc. Formation de barriere au moyen d'un procede de depot par pulverisation
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US6730174B2 (en) 2002-03-06 2004-05-04 Applied Materials, Inc. Unitary removable shield assembly
JP2005525471A (ja) * 2002-05-14 2005-08-25 東京エレクトロン株式会社 スパッタリングカソードアダプタアセンブリおよび方法
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US7001491B2 (en) * 2003-06-26 2006-02-21 Tokyo Electron Limited Vacuum-processing chamber-shield and multi-chamber pumping method
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
JP5179175B2 (ja) * 2004-07-09 2013-04-10 エナジェティック・テクノロジー・インコーポレーテッド 誘導駆動プラズマ光源
US20060049041A1 (en) * 2004-08-20 2006-03-09 Jds Uniphase Corporation Anode for sputter coating
US8500973B2 (en) * 2004-08-20 2013-08-06 Jds Uniphase Corporation Anode for sputter coating
US7879209B2 (en) * 2004-08-20 2011-02-01 Jds Uniphase Corporation Cathode for sputter coating
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
KR100591433B1 (ko) * 2004-12-29 2006-06-22 동부일렉트로닉스 주식회사 질화 티타늄(TiN) 스퍼터링 공정용 실드 및 코팅방법
US7922881B2 (en) * 2005-02-28 2011-04-12 Tosoh Smd, Inc. Sputtering target with an insulating ring and a gap between the ring and the target
US7799190B2 (en) * 2005-04-14 2010-09-21 Tango Systems, Inc. Target backing plate for sputtering system
US7550055B2 (en) * 2005-05-31 2009-06-23 Applied Materials, Inc. Elastomer bonding of large area sputtering target
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) * 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US8454804B2 (en) * 2005-10-28 2013-06-04 Applied Materials Inc. Protective offset sputtering
US7884032B2 (en) * 2005-10-28 2011-02-08 Applied Materials, Inc. Thin film deposition
US8460519B2 (en) * 2005-10-28 2013-06-11 Applied Materials Inc. Protective offset sputtering
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US20070113783A1 (en) * 2005-11-19 2007-05-24 Applied Materials, Inc. Band shield for substrate processing chamber
US8790499B2 (en) 2005-11-25 2014-07-29 Applied Materials, Inc. Process kit components for titanium sputtering chamber
JP4936129B2 (ja) * 2006-07-12 2012-05-23 富士電機株式会社 プラズマ処理装置
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
DE112008000702T5 (de) * 2007-03-16 2010-03-11 National University Corporation Tohoku University Magnetron-Sputter-Vorrichtung
JP5547366B2 (ja) * 2007-03-29 2014-07-09 東京エレクトロン株式会社 プラズマ処理装置
US20080257263A1 (en) * 2007-04-23 2008-10-23 Applied Materials, Inc. Cooling shield for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
JP5264231B2 (ja) 2008-03-21 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
US9123511B2 (en) 2008-05-02 2015-09-01 Applied Materials, Inc. Process kit for RF physical vapor deposition
KR200455669Y1 (ko) * 2008-05-19 2011-09-19 노벨러스 시스템즈, 인코포레이티드 프로세스 챔버 실드용 에지 프로파일링
US8066857B2 (en) * 2008-12-12 2011-11-29 Fujifilm Corporation Shaped anode and anode-shield connection for vacuum physical vapor deposition
EP2209132A1 (fr) * 2009-01-16 2010-07-21 Applied Materials, Inc. Dispositif PVD à faisceau de particules chargées, dispositif de blindage, chambre de revêtement pour substrats et procédé de revêtement
US20110036709A1 (en) * 2009-08-11 2011-02-17 Applied Materials, Inc. Process kit for rf physical vapor deposition
US9181619B2 (en) * 2010-02-26 2015-11-10 Fujifilm Corporation Physical vapor deposition with heat diffuser
US8133362B2 (en) * 2010-02-26 2012-03-13 Fujifilm Corporation Physical vapor deposition with multi-point clamp
JP4918147B2 (ja) * 2010-03-04 2012-04-18 キヤノンアネルバ株式会社 エッチング方法
CN108359957A (zh) * 2010-10-29 2018-08-03 应用材料公司 用于物理气相沉积腔室的沉积环及静电夹盘
US8702918B2 (en) * 2011-12-15 2014-04-22 Applied Materials, Inc. Apparatus for enabling concentricity of plasma dark space
US9404174B2 (en) 2011-12-15 2016-08-02 Applied Materials, Inc. Pinned target design for RF capacitive coupled plasma
US9960021B2 (en) * 2013-12-18 2018-05-01 Applied Materials, Inc. Physical vapor deposition (PVD) target having low friction pads
CN104099575B (zh) * 2014-07-11 2016-08-03 京东方科技集团股份有限公司 一种磁控溅射装置
JP2014241417A (ja) * 2014-07-15 2014-12-25 シャープ株式会社 アルミニウム含有窒化物中間層の製造方法、窒化物層の製造方法および窒化物半導体素子の製造方法
WO2017218919A1 (fr) 2016-06-18 2017-12-21 Molex, Llc Canal de connecteur blindé sélectivement
WO2020004619A1 (fr) * 2018-06-28 2020-01-02 株式会社アルバック Dispositif de dépôt par pulvérisation
JP7240958B2 (ja) * 2018-09-06 2023-03-16 東京エレクトロン株式会社 プラズマ処理装置
JP7274347B2 (ja) * 2019-05-21 2023-05-16 東京エレクトロン株式会社 プラズマ処理装置
KR20210148458A (ko) * 2020-05-28 2021-12-08 삼성디스플레이 주식회사 증착 장치, 및 증착 장치를 이용한 증착 방법
CN114809888B (zh) * 2022-04-06 2023-08-29 常州雷宁电磁屏蔽设备有限公司 等离子电磁屏蔽门

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4116793A (en) * 1974-12-23 1978-09-26 Telic Corporation Glow discharge method and apparatus
US4169031A (en) * 1978-01-13 1979-09-25 Polyohm, Inc. Magnetron sputter cathode assembly
US4362611A (en) * 1981-07-27 1982-12-07 International Business Machines Corporation Quadrupole R.F. sputtering system having an anode/cathode shield and a floating target shield
JPS5848422A (ja) * 1981-09-17 1983-03-22 Nec Corp 複合ドライエツチング装置
JPS639117A (ja) * 1986-06-30 1988-01-14 Matsushita Electric Ind Co Ltd 半導体薄膜形成装置
JPS6454733A (en) * 1987-08-26 1989-03-02 Toshiba Corp Production device for semiconductor
JPH0245917A (ja) * 1988-08-08 1990-02-15 Matsushita Electron Corp 薄膜形成装置
US5294320A (en) * 1990-02-09 1994-03-15 Applied Materials, Inc. Apparatus for cleaning a shield in a physical vapor deposition chamber
US5135634A (en) * 1991-02-14 1992-08-04 Sputtered Films, Inc. Apparatus for depositing a thin layer of sputtered atoms on a member
DE4126236C2 (de) * 1991-08-08 2000-01-05 Leybold Ag Rotierende Magnetron-Kathode und Verwendung einer rotierenden Magnetron-Kathode
DE4140862A1 (de) * 1991-12-11 1993-06-17 Leybold Ag Kathodenzerstaeubungsanlage
DE4201551C2 (de) * 1992-01-22 1996-04-25 Leybold Ag Zerstäubungskathode
DE69403386T2 (de) * 1993-05-19 1997-09-18 Applied Materials Inc Vorrichtung und Verfahren zur Erhöhung der Zerstäubungsrate in einem Zerstäubungsgerät
JPH06346234A (ja) * 1993-06-08 1994-12-20 Anelva Corp スパッタリング装置
US5419029A (en) * 1994-02-18 1995-05-30 Applied Materials, Inc. Temperature clamping method for anti-contamination and collimating devices for thin film processes
US5527439A (en) * 1995-01-23 1996-06-18 The Boc Group, Inc. Cylindrical magnetron shield structure
US5763851A (en) * 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system

Also Published As

Publication number Publication date
US5736021A (en) 1998-04-07
KR980011765A (ko) 1998-04-30
KR100517474B1 (ko) 2005-12-07
TW346639B (en) 1998-12-01
EP0818803A2 (fr) 1998-01-14
EP0818803A3 (fr) 1999-03-31
JP4233618B2 (ja) 2009-03-04
JPH1072665A (ja) 1998-03-17

Similar Documents

Publication Publication Date Title
SG71027A1 (en) Electrically floating shield in a plasma reactor
SG49031A1 (en) Shield flat cable
EP0846407A4 (fr) Blindage anti-rayonnement pour telephone
HK1060292A1 (en) Face shield
TW383938U (en) Electrical grounding shroud
EP0747733A3 (fr) Dispositif de détection pour des pièces conductives métalliques
GB2319899B (en) Shielding case
PT785569E (pt) Reactor de plasma
GB9324064D0 (en) Grounding electrical leads
EP1119030A4 (fr) Reacteur au plasma
PL334476A1 (en) Reactor
GB2319898B (en) Shielding case
GB9304432D0 (en) Secondary electric generation
GB2301944B (en) Shield case
GB9520587D0 (en) Grounding electrode
TW392960U (en) Shield type connector
GB9501954D0 (en) Retractable shield
SG64849A1 (en) Shielded electrical connector and shield case therefor
TW356295U (en) Electric connector with shielding shell
PL319532A1 (en) Voltaic cell
GB2277015B (en) A protective shield
ZA9810861B (en) A reactor
ZA953917B (en) A floating cover
HUT67822A (en) Electrical shell separator
AU7684994A (en) A conductive shield