US4001014A - Electrophotographic photosensitive plate having tellurium present in varying concentrations across its thickness - Google Patents

Electrophotographic photosensitive plate having tellurium present in varying concentrations across its thickness Download PDF

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US4001014A
US4001014A US05/505,497 US50549774A US4001014A US 4001014 A US4001014 A US 4001014A US 50549774 A US50549774 A US 50549774A US 4001014 A US4001014 A US 4001014A
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layer
selenium
plate according
layer part
tellurium
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US05/505,497
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English (en)
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Eiji Ando
Yoshiki Hayashi
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority claimed from JP10526973A external-priority patent/JPS537811B2/ja
Priority claimed from JP11820073A external-priority patent/JPS5416414B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0436—Photoconductive layers characterised by having two or more layers or characterised by their composite structure combining organic and inorganic layers

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  • This invention relates to an electrophotographic photosensitive plate, and more particularly to an improved multi-layered electrophotographic photosensitive plate comprising a photosensitizing layer of vitreous selenium and tellurium and a charge-retaining and charge-transporting top layer of an organic material.
  • This powder developing material will normally be attracted to those portions of the layer which retain a charge, thereby forming a powder image corresponding to the latent electrostatic image.
  • This powder image may be transferred to paper or other receiving surfaces. The paper then will bear the powder image which may subsequently be made permanent by heating or other suitable fixing means.
  • Carlson process is also described in U.S. Pat. Nos. 2,357,809, 2,891,011 and 3,079,342.
  • the electrophotographic photosensitive plate can be highly charge-retaining when subjected to the charging, that the charge retained on the plate can be quickly discharged to an electrically conductive substrate when the plate is exposed to a visible light be high with respect to a wide range of wavelengths of light (i.e. that it be is high with respect to wide wavelength range of the light (which panchromatic), and that the residual potential (charge) on the plate after the light exposure be low.
  • the plate For using the plate in a roll form or a bent form, it is desired that the plate be flexible.
  • French Pat. No. 72/36769 discloses an electrophotographic photosensitive plate comprising, in order from the bottom up, an electrically conducting substrate, a photosensitizing layer of vitreous selenium-tellurium alloy, an organic top layer comprising a member selected from the group consisting of polyvinyl carbazole and a derivative thereof.
  • This known electrophotographic plate is advantageously flexible, panchromatic and highly charge-retaining. Further, this known plate can be either highly sensitive to visible light (one advantage) or the plate can have low residual potential (one advantage). However, this known plate cannot have both of these advantages at the same time.
  • an object of this invention to provide an electrophotographic plate having all the advantages of the known electrophotographic plate, high sensitivity to visible light and low residual potential at the same time.
  • the photosensitizing layer comprising selenium and tellurium have a two-part structure composed of a first layer part 0.05 to 2 microns in thickness having 60 to 90 weight % of tellurium and a second layer part 0.05 to 1 micron in thickness having a higher concentration of selenium than that of the first layer part the second layer part being positioned between the first layer part of the photosensitizing layer and the top organic layer.
  • This second layer part of the photosensitizing layer can also be composed of selenium alone.
  • the single FIGURE is a schematic cross-sectional view of an electrophotographic photosensitive plate according to this invention.
  • an electrophotographic photosensitive plate comprises, in order from the bottom up, an electrically conducting substrate 1, a thin photosensitizing layer 2 composed of vitreous selenium and tellurium having a thickness preferably of 0.1 to 3 microns, and a layer 3 of an organic material including polyvinyl carbazole of a derivative thereof.
  • the photosensitizing layer 2 is composed of a first layer part 4 of vitreous selenium-tellurium alloy having a thickness preferably of 0.05 to 2 microns, and a second layer part 5 of vitreous selenium only or vitreous selenium-tellurium alloy having a concentration of selenium higher than that of the first layer and a thickness preferably of 0.05 to 1 micron.
  • the plate is made by vacuum-depositing the thin photosensitizing layer 2 on the electrically conducting substrate 1, and overcoating a solution of an organic material including polyvinyl carbazole or a derivative thereof on the layer 2, and then drying the solvent of the solution so as to form the top layer 3.
  • polyvinyl carbazole or derivative thereof (hereinafter for convenience called simply "polyvinyl carbazole") referred to herein is a polymer of vinyl carbazole and/or a derivative thereof, of a copolymer of N-vinyl carbazole or derivative thereof, and another vinyl compound, such as vinyl acetate or methyl methacrylate.
  • the derivative referred to herein has a substitutent, such as a halogen atom, nitro radical, alkyl radical, aryl radical, alkyl aryl radical, amino radical or alkylamino radical, in place of a hydrogen atom in the carbazole ring in the recurring unit of the above mentioned polymers, as shown in the following chemical formula: ##STR1## wherein X is the substituent.
  • the number and position of said substitutents in the carbazole ring and the degree of polymerization of the resultant polymer are determined by their method of preparation and are not limited to those expressly disclosed herein.
  • polyvinylcarbazole can be applied to a conductive substrate to form a film layer having a dry thickness of about 0.5-50 ⁇ , which is utilized as an electrophotographic photosensitive material. It is also known that such a layer of polyvinyl carbazole is inherently photosensitive to light in the near ultraviolet region (about 300-450 ⁇ ) and can be extended to be photosensitive in the visible ray region by adding an active additive such as Lewis acid and/or a sensitizing dye to a coating solution of polyvinyl carbazole, as described in the U.S. Pat. No. 3,037,861.
  • the addition of a sensitizer into the top layer 3 of the polyvinyl carbazole is not necessary, and, on the contrary, seems undesirable because charge retentivity and light decay speed are somewhat reduced by the sensitizer.
  • a sensitizer molecule dispersed in the layer 3 of polyvinyl carbazole acts as a filter which attenuates the intensity of actinic light which reaches the photosensitizing layer 2 of vitreous selenium and tellurium through the layer 3, and acts as a trap which traps the moving carrier in the layer 3 of polyvinyl carbazole.
  • plasticizers and binders may be selectively added to the polyvinyl carbazole.
  • plasticizers are, for example, chlorinated diphenyl, epoxy resin, dioctyl phthalate, tricresyl phosphate, etc.
  • binders are, for example, polycarbonate, cyanoethyl cellulose, etc.
  • the operable thickness of the polyvinyl carbazole layer 3 can be reduced to less than about 40 ⁇ .
  • the most preferable thickness for practical use is from 10 to 25 ⁇ .
  • the layer 3 thus prepared enhances the low charge-retentivity of the thin layer 2 of selenium and tellurium and provides a normal charge-retentivity.
  • an electrical barrier layer between the electrically conducting substrate 1 and the layer 2 such as is preferably used in a conventional xerographic tellurium-doped selenium plate, as described in U.S. Pat. No. 2,962,376.
  • any available and suitable conducting base may be used, for example, a flexible material such as a paper or a plastic sheet of polyester, cellulose acetate, etc., having a thin layer of aluminium, copper iodide, etc. thereon.
  • the flexible substrate may be in any form such as a sheet or web.
  • any rigid and suitable base may be used in any convenient thickness and in any desired form such as a plate, cylinder, drum, etc.
  • the layer 2 of selenium and tellurium is made as follows. First, the layer part 4 of the layer 2 is made by vacuum evaporating and depositing selenium-tellurium alloy on the conducting substrate 1 from one source (by a so-called alloy evaporation method) or by evaporating selenium and tellurium simultaneously from different sources (by a so-called co-evaporation method) followed by depositing. It is also possible to use a flash evaporation method. The selenium (or tellurium) concentration of this layer part 4 is substantially uniform.
  • the layer part 5 on the layer part 4 is made by vacuum evaporating and depositing on the layer part 4 (1) selenium-tellurium alloy having a selenium concentration higher than that used in making the layer part 4 or (2) selenium alone, in the same manner as that used in making the layer part 4.
  • the layer part 2 is made e.g. as follows.
  • the layer 1 is subjected to vacuum evaporation and depositing of selenium-tellurium alloy from a first source for a suitable time.
  • (1) selenium-tellurium alloy having a selenium concentration higher than that in the first source or (2) selenium alone is gradually heated up as a second source.
  • the heat for the first source is gradually stopped.
  • the heat (evaporation) of the second source is continued for a suitable time.
  • the vacuum evaporated layer part made by the first source by the time the heat-up of the second source is started is the layer part 4, and the layer part made on the layer part 4 thereafter is the layer part 5.
  • the layer part 4 has a substantially uniform concentration of selenium (or tellurium)
  • the layer part 5 has a concentration of selenium gradually increasing from the lowest concentration at the surface thereof facing the layer part 4 to the highest concentration at the surface thereof facing the top layer.
  • the thickness of the layer 2 is preferably less than 3 microns in order to promote flexibility and easy manufacturing.
  • the time required for evaporation deposition is less than one minute, and in practice is only a few seconds.
  • the resultant plate has a low manufacturing cost and has excellent flexibility.
  • the thickness of the layer part 4 is preferably more than 0.05 micron, more preferably more than 0.3 micron, and the thickness of the layer part 5 is preferably less than 1 micron, and more preferably less than 0.3 micron.
  • the thickness of the layer part 5 is preferably more than 0.5 micron, and more preferably more than 0.1 micron.
  • the tellurium concentration in the layer part 4 is preferably less than 40 weight %, and more preferably less than 25 weight %, to obtain good electrophotographic characteristics of the resultant plate such as a good charge-retaining property and ease of manufacturing of the electrophotographic plate. Further, it is preferably more than 10 weight %, and more preferably more than 15 weight %, to obtain a good sensitizing function of the layer 2. Therefore, the preferable weight % range of selenium in the layer part 4 is 90 to 60, and a more preferable one is 85 to 75.
  • the selenium concentration in the layer part 5 should be more than that in the layer part 4 and the tellurium concentration less for obtaining the effect of using the two-layer structure, i.e. layer parts 4 and 5, (i.e.
  • the difference between the concentration of selenium in weight % in the layer part 4 and that in the layer part 5 is more than 10.
  • the selenium concentration in the layer part 4 is less than 90 weight %, and the tellurium concentration is more than 10 wt.% the selenium concentration in the layer part 5 is preferably more than 90 weight % and the tellurium concentration is less than 10 wt.% to obtain good residual potential.
  • the layer part 5 can be composed of vitreous selenium only.
  • the plate of the invention easily forms a negatively charged latent image having a surface potential of about 1000 volts or more and holds it for a long time, it is possible to use the plate not only in the common xerographic process including a step of applying charged powder directly to the plate, but also in a method called TESI (transferring an electrostatic image) of transferring the electrostatic latent image to a dielectric coated paper.
  • TESI transferring an electrostatic image
  • the electrophotographic plate of the invention has an increasing rate of charge potential similar to that of a conventional xerographic plate of an Electrofax paper under the usual negative corona discharge atmosphere in the dark.
  • the electrophotographic plate of this invention has a layer 3 of organic material having a thickness of about 10 to 40 microns applied on photosensitizing layer 2. So this electrophotographic plate has high charge retentivity.
  • the electrophotographic plate of the invention does not require an electric barrier layer such as a thin layer of polypyromellitic imide, epoxy resin or porous aluminium oxide. Further, the electrophotographic plate of this invention is panchromatic over the wavelength of visible light of 4000 to 8000A.
  • Selenium-tellurium alloy was vacuum-evaporated at a vacuum of 5 ⁇ 10.sup. -5 Torr and deposited to form a thin selenium-tellurium layer having a thickness of 0.3 micron on an electrically conducting substrate comprising polyester film 75 microns in thickness and an aluminium layer 1 micron in thickness.
  • the amount of tellurium in the selenium-tellurium layer for six pairs of specimens was varied so as to be 10, 15, 20, 25, 30 and 40 weight %, respectively.
  • two groups each having six specimens (10, 15, 20, 25, 30 and 40 weight % tellurium, respectively) were made.
  • vitreous selenium only was vacuum-evaporated and deposited 5 ⁇ 10.sup.
  • the completed 12 plates No. 1 to No. 12 were then tested with an electrophotographic photosensitometer with a conventional dynamic decay tester. Further, the 12 plates were subjected to tests for measuring their spectral responses in the visible light region with the aid of an electrophotographic grating spectrograph.
  • All the Samples Nos. 1-12 could be charged with -1000 volts.
  • E 50 of each Sample was measured, wherein E 50 is the light exposure in lux.sec required for causing each Sample to have a surface potential of half of the initial surface potential thereof before the start of light exposure. Further, the surface potential of each Sample after a light exposure of 30 lux.sec was taken as the residual potential of each Sample.
  • E 50 of Samples Nos. 1-12 were 6, 3.3, 2.1, 1.9, 1.7, 1.1, 6, 3.1, 2.0, 1.8, 1.5 and 0.9 lux.sec, respectively. This indicates that there was substantially no difference in E 50 between the Samples including the same amount of tellurium in the selenium-tellurium layer.
  • the residual potentials of Samples Nos. 1-12 were 7, 7,7, 10, 20, 25, 30, 40, 50, 60, 75 and 100 volts, respectively. This indicates that there was a great difference in residual potential between the Samples including the same amount of tellurium in the selenium-tellurium layer.
  • Samples Nos. 3 and 9 both had a wavelength range of 4000 to 8000A to which they were sensitive. That is, they had the same panchromatic photosensitivity.
  • Samples Nos. 13-16 were made which were the same as Sample No. 3 except that the selenium-tellurium alloy layers of these Samples Nos. 13-16 were 0.01 micron, 0.05 micron, 0.5 micron and 2 microns thick, respectively. These Samples were charged with -1000 volts, and E 50 was measured for each. Sample No. 13 had E 50 of 8 lux.sec, Sample No. 14 had E 50 of 2.5 lux.sec, and Samples Nos. 15 and 16 had E 50 of 2 lux.sec. Sample No. 13 was therefore much less sensitive to light than the other samples.
  • Samples Nos. 17-22 were made which were the same as Sample No. 3 except that each of these Samples Nos. 17-22 had a selenium-tellurium alloy layer 0.2 micron thick instead of the layer of selenium only in Sample No. 3. That is, this selenium-tellurium alloy layer of each of Samples Nos. 17-22 was on the selenium-tellurium alloy layer of 0.3 micron thick firstly made on the electrically conducting substrate thereof. This selenium-tellurium alloy layer of 0.2 micron thick, instead of the layer of selenium only of Sample No. 3, was made by the same vacuum-evaporation technique described in EXAMPLE 1.
  • Samples Nos. 17-22 had tellurium concentrations of 3, 7, 10, 15, 20 and 30 weight %, respectively. These Samples were charged with -1000 volts, and E 50 and the residual potential of each were measured. Samples Nos. 17-21 had E 50 of 2 lux.sec, and Sample No. 22 had E 50 of 1.6 lux.sec. Samples Nos. 17-22 had residual potentials of 8, 10, 13, 35, 50 and 80 volts, respectively. This indicates that Sample No. 22 has a little better E 50 than the other Samples, but was very much inferior in its residual potential. Sample No. 21 was no different in residual potential from Sample No. 9. Sample No.
  • Samples Nos. 17-19 were very much superior in residual potential than Sample No. 21 or 9. This further indicates that it is desirable that the amount of tellurium in the selenium-tellurium layer of 0.2 micron be less than 10 weight % (and the amount of selenium be more than 90 weight %).
  • Samples Nos. 23-28 were made which were the same as Sample No. 2 except that the layers of selenium only of these Samples Nos. 23-28 were 0.01, 0.05, 0.1, 0.5, 1 and 2 microns thick, respectively. E 50 and residual potentials of these Samples Nos. 23-28 were measured. Samples Nos. 23-25 had E 50 of 3 lux.sec, Sample No. 26 had E 50 of 3.2 lux.sec, Sample No. 27 had E 50 of 4 lux.sec, and Sample No. 28 had E 50 of 8 lux.sec. Samples Nos. 23-25 had residual potentials of 45, 20 and 10 volts, respectively. And Samples Nos.
  • 26-28 had a residual potential of 7 volts. This indicates that Samples Nos. 23-27 had good E 50 , whereas Sample No. 28 had inferior E 50 . Further, Samples Nos. 24-28 had acceptable residual potentials, whereas Sample No. 23 had a high residual potential.
  • Selenium-tellurium alloy (25 weight % Te) was vacuum-evaporated and deposited on an aluminum plate 1 mm thick at 5 ⁇ 10.sup. -5 Torr from a first source for 5 seconds. Then, vacuum-evaporation of selenium was started from a second source in the same vacuum chamber by gradually heating the second source. Two seconds after the start of the vacuum evaporation by the second source, the heat of the first source was started to be reduced. Four seconds after the start of the vacuum evaporation by the second source, the heat of the first source was reduced sufficiently to stop evaporation. Three seconds after the start of the vacuum evaporation by the second source, the heat of the second source was started to be reduced down.
  • a two-layer-structured photosensitizing layer was made, which was composed of a first layer part 0.5 micron thick, having a substantially uniform concentration of selenium and tellurium and a second layer part 0.5 micron thick coated on the first layer and having a concentration of selenium gradually increasing from the lowest concentration at the surface thereof facing the first layer part to the highest concentration at the opposite surface thereof.
  • An organic coating 15 microns thick the same as that applied in EXAMPLE 1 was applied on the thus made photosensitizing layer.
  • the thus made electrophotographic plate was designated as Sample No. 29. In the same way, Sample No.
  • Samples Nos. 29 and 30 were made, except that in making Sample No. 30 selenium-tellurium alloy (5 weight % Te) was used in the second source instead of selenium. Samples Nos. 29 and 30 were subjected to the measurements described in EXAMPLE 1. E 50 of Samples Nos. 29 and 30 were 1.9 and 1.8 lux.sec, respectively. The residual potentials of Samples Nos. 29 and 30 were 10 and 12 volts, respectively.
  • Example No. 3 Four Samples each the same as Sample No. 3 except for the organic coating were prepared.
  • a solution having a composition similar to that of Example 1 was prepared by replacing poly-N-vinylcarbazole with the same weights of brominated poly-N-vinylcarbazole (for Sample No. 31), iodide poly-N-vinylcarbazole (Sample No. 32), poly-N-vinyl-3-aminocarbazole (Sample No. 33), and poly-N-vinyl-3-nitrocarbazole (Sample No. 34), and was applied to the layer of selenium-tellurium alloy.
  • the thicknesses of the four dried coatings were all 20 microns.
  • Brominated poly-N-vinylcarbazole is disclosed in detail in Japanese Patent Publications 42-19751/1967, 42-21867/1967 and 42-25230/1967. Also, there are disclosed in detail in Japanese Patent Publication 42-82462/1967 iodide poly-N-vinylcarbazole; in 42-9639/1967 poly-N-vinyl-3-aminocarbazole, and in 41-14508/1966 poly-N-vinyl-3-nitrocarbazole, respectively.

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  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
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  • Photoreceptors In Electrophotography (AREA)
US05/505,497 1973-09-17 1974-09-12 Electrophotographic photosensitive plate having tellurium present in varying concentrations across its thickness Expired - Lifetime US4001014A (en)

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JA48-105269 1973-09-17
JP10526973A JPS537811B2 (de) 1973-09-17 1973-09-17
JP11820073A JPS5416414B2 (de) 1973-10-19 1973-10-19
JA48-118200 1973-10-19

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4121981A (en) * 1977-09-23 1978-10-24 Xerox Corporation Electrochemical method for forming a selenium-tellurium layer in a photoreceptor
US4315063A (en) * 1977-11-17 1982-02-09 Canon Kabushiki Kaisha Electrophotographic photosensitive member having a halogen containing charge injection layer
US4610942A (en) * 1984-02-16 1986-09-09 Canon Kabushiki Kaisha Electrophotographic member having corresponding thin end portions of charge generation and charge transport layers
US4983482A (en) * 1989-04-03 1991-01-08 Xerox Corporation Photoconductive imaging members with polyurethane hole transporting layers
CN108457669A (zh) * 2018-04-25 2018-08-28 南京大学 一种螺线形走向盾构隧道衬砌管片及其施工方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2621854A1 (de) * 1975-07-01 1977-01-27 Xerox Corp Abbildungselement
US4292385A (en) * 1979-09-04 1981-09-29 A. B. Dick Company Bi-modal photoreceptor and method
DE2938113C2 (de) * 1979-09-20 1982-10-28 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines elektrophotographischen Aufzeichnungsmaterials

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US2803541A (en) * 1953-05-29 1957-08-20 Haloid Co Xerographic plate
US3041166A (en) * 1958-02-12 1962-06-26 Xerox Corp Xerographic plate and method
US3350595A (en) * 1965-11-15 1967-10-31 Rca Corp Low dark current photoconductive device
US3355289A (en) * 1962-05-02 1967-11-28 Xerox Corp Cyclical xerographic process utilizing a selenium-tellurium xerographic plate
US3708291A (en) * 1968-06-27 1973-01-02 Katsuragawa Denki Kk Photosensitive elements for use in electrophotography and method of manufacturing same
US3723105A (en) * 1970-09-19 1973-03-27 Canon Kk Process for preparing selenium tellurium alloys
US3725058A (en) * 1969-12-30 1973-04-03 Matsushita Electric Ind Co Ltd Dual layered photoreceptor employing selenium sensitizer
US3771866A (en) * 1970-12-30 1973-11-13 Minolta Camera Kk Transfer type electrophotographic duplicating apparatus
US3787207A (en) * 1971-12-16 1974-01-22 Matsushita Electric Ind Co Ltd Electrophotographic photosensitive plate having a polyimide intermediate layer
US3861913A (en) * 1972-03-31 1975-01-21 Ibm Electrophotographic charge generation layer
US3881923A (en) * 1970-06-15 1975-05-06 Minolta Camera Kk Electrophotographic sensitive plate
US3904408A (en) * 1969-11-14 1975-09-09 Canon Kk Electrophotographic member with graded tellurium content

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2803541A (en) * 1953-05-29 1957-08-20 Haloid Co Xerographic plate
US3041166A (en) * 1958-02-12 1962-06-26 Xerox Corp Xerographic plate and method
US3355289A (en) * 1962-05-02 1967-11-28 Xerox Corp Cyclical xerographic process utilizing a selenium-tellurium xerographic plate
US3350595A (en) * 1965-11-15 1967-10-31 Rca Corp Low dark current photoconductive device
US3708291A (en) * 1968-06-27 1973-01-02 Katsuragawa Denki Kk Photosensitive elements for use in electrophotography and method of manufacturing same
US3904408A (en) * 1969-11-14 1975-09-09 Canon Kk Electrophotographic member with graded tellurium content
US3725058A (en) * 1969-12-30 1973-04-03 Matsushita Electric Ind Co Ltd Dual layered photoreceptor employing selenium sensitizer
US3881923A (en) * 1970-06-15 1975-05-06 Minolta Camera Kk Electrophotographic sensitive plate
US3723105A (en) * 1970-09-19 1973-03-27 Canon Kk Process for preparing selenium tellurium alloys
US3771866A (en) * 1970-12-30 1973-11-13 Minolta Camera Kk Transfer type electrophotographic duplicating apparatus
US3787207A (en) * 1971-12-16 1974-01-22 Matsushita Electric Ind Co Ltd Electrophotographic photosensitive plate having a polyimide intermediate layer
US3861913A (en) * 1972-03-31 1975-01-21 Ibm Electrophotographic charge generation layer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4121981A (en) * 1977-09-23 1978-10-24 Xerox Corporation Electrochemical method for forming a selenium-tellurium layer in a photoreceptor
US4315063A (en) * 1977-11-17 1982-02-09 Canon Kabushiki Kaisha Electrophotographic photosensitive member having a halogen containing charge injection layer
US4610942A (en) * 1984-02-16 1986-09-09 Canon Kabushiki Kaisha Electrophotographic member having corresponding thin end portions of charge generation and charge transport layers
US4983482A (en) * 1989-04-03 1991-01-08 Xerox Corporation Photoconductive imaging members with polyurethane hole transporting layers
CN108457669A (zh) * 2018-04-25 2018-08-28 南京大学 一种螺线形走向盾构隧道衬砌管片及其施工方法
CN108457669B (zh) * 2018-04-25 2024-04-12 南京大学 一种螺线形走向盾构隧道衬砌管片及其施工方法

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GB1450344A (en) 1976-09-22
CA1036860A (en) 1978-08-22
DE2444620B2 (de) 1976-09-02
DE2444620A1 (de) 1975-03-20

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