US3898413A - Induction heat coil arrangement - Google Patents

Induction heat coil arrangement Download PDF

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Publication number
US3898413A
US3898413A US460538A US46053874A US3898413A US 3898413 A US3898413 A US 3898413A US 460538 A US460538 A US 460538A US 46053874 A US46053874 A US 46053874A US 3898413 A US3898413 A US 3898413A
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US
United States
Prior art keywords
coil
induction heating
heating coil
heat
insulating material
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US460538A
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English (en)
Inventor
Wolfgang Keller
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Siemens AG
Siemens Corp
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Siemens Corp
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Publication date
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/02Induction heating
    • H05B6/36Coil arrangements
    • H05B6/362Coil arrangements with flat coil conductors
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • C30B13/20Heating of the molten zone by induction, e.g. hot wire technique

Definitions

  • ABSTRACT An induction heat coil arrangement, in particular an apparatus for the crucible -free zone melt treatment of ..2l9/10.79; 219/1043 Int. Cl. H05b 5/08 a semiconductor rod, including at least two hollow turns with a conduit for guiding a heatexchange fluid contained therein.
  • the outer turn comprises a bent 2 7 .x O 3 ,2 92 7 v 2 m v 6 33 4 3 1 1 w m D .1 4 m0 l 7 ms 00 d/ l .w@ F2 00 5 References Cited metal tube which is provided with a heat-resistant in- UNITED STATES PATENTS sulator sleeve to avoid arcings which are detrimental to the induction heat coil arrangement itself as well as S d. m .e r m u C a n a O r. .m D m 2 e a s S e .m m m f O C y 5 uh m u o e h t O t 393 000 HUN 999 222 Stanton...........
  • the invention generally. relates to induction coil structures and, more particularly, to readily producible and easily adjustable induction coils which are used in a crucible-free floating melt zone treatment of semiconductor rods in a protective gas atmosphere.
  • a semiconductor rod is moved through a melting zone produced by an induction heat coil, in order to improve thedistribution of dopants therein or to transport impurities to one end of the rod.
  • this method can be used to grow monocrystals. It is carried out in a vacuum or in a protective gas atmosphere consisting of hydrogen, argon ,or another inert gas.
  • the turns of a coil asdescribed above usually consist of copper or silver tubes, whereby the conduits inside of the tubes are used as passage for a heat-exchange fluid.
  • Electrical energy usually of a high frequency, is supplied to the coil, to melt the part of the semiconductor-rod which is encompassed by the coil, while the coil and the rod are slowly moved relative to one another, so that the material within the rod is treated uniformly.
  • the current con ducting parts are not separated from the atmosphere of the melting chamber which usually consists of a protective gas.
  • the zone melting process must be carried out in a very pure protective gas atmosphere at a pressure higher than atmospheric pressure.
  • argon is used as protective gas, and relatively high frequencies are applied, starting approximately at 500V, electric arcings may easily occur between the turns of an induction heat coil, and these arcings have a damaging effect on the quality of the semiconductor crystal. The arcings also damage or destroy the voltage supply lines.
  • the coil comprises at least two turns, wherein the outer turn comprises a bent metal tube which is provided with a heat-resistant insulator sleeve coating and the inner turn comprises a flat coil, which may be grounded.
  • the outer turn forms a part of the high frequency current supply path, and the voltage-conducting members are insulated from one another in the area where the highest voltage exists. This is particularly important if semiconductor rods of relatively large diameters are to be produced or purified.
  • a quartz or glass tube which is bent in accordance with the-outer turn may be used as an insulator sleeve, and the outer turn is placed therein.
  • the insulator sleeve is formed of ceramic beads which are threaded onto the metal tube constituting, the outer coil turn whereby the spaces between the beads are filled with a temperature-resistant insulator material.
  • the insulator sleeve is a glass or quartz tissue or cloth soaked or saturated in an insulator material.
  • FIG. 1 is a partially sectional top view of a coil structure incorporating the principles of the invention, whereby the outer turn constitutes part of the high frequency current path;
  • FIG. 2 is a partially sectional top view of an embodiment whereby the'outer turn isconnected with the high frequencycurrent supply line via an intermediate metal piece.
  • FIG. 1 illustrates a safety induction heating coil for a crucible-free melt zone treatment of semiconductor rods in a protective gas atmosphere, in particular an argon atmosphere, consisting of an inner turn I, which is embodied as a flat coil, and a outer turn 2 consisting of an appropriately bent metal tube, such as composed of silver or copper and constituting a part of the high frequency current path 3.
  • a sleeve 4 made of temperature-resistant insulator material is placed over this silver or copper conductor tube, and extends into the high frequency supply path 3.
  • a screw 5A connects coil member l with coil member 2 via the intermediate metal piece 5.
  • Another intermediate metal piece 6 connects the coil member I with high frequency current supply path 3.
  • the coil arrangement is sealed by means of silicon rubber seals 7.
  • a protrusion 8 may be provided on the inner coil member I for grounding the coil arrangement.
  • FIG. 2 illustrates a similar embodiment as FIG. l, but here the outer turn 2 does not constitute a part of the high frequency current supply path but is connected with the current path 3 via an intermediate metal piece 9.
  • Identical reference numerals have been used in this Figure to denote parts which are similar or identical to those used in FIG. I.
  • the outer turn 2 is also provided with a sleeve 4 made of a heatresistant electrical insultor material which may be selected from the group consisting of silicon resin, silicon rubber and polybismaleic imide resin.
  • the coil arrangement as described above has a greater inductivity than a flat coil with a single winding, and thus the current consumption decreases while the voltage increases.
  • An essentially smaller tuning capacity is required in such an arrangement. As an example, only approximately 6000pF are required for a frequency of 4Ml-lz. Long high frequency current paths do not need to be interlaced any more, because the current is lower and, in addition, the tuning capacitors become essentially smaller, even if a low operational frequency is used.
  • the induction heating coil arrangement may be produced as an assembled structure which may be taken apart whereby the coil comprises of at least two components which are connected with one another by connections and sealings provided for cooling purposes.
  • thermoelectric heating coil as defined in claim 1 wherein said heat-resistant electrically insulating material comprises ceramic beads which are threaded over the bent metal tube of the outermost turn.
  • peripheral coating comprises a quartz cloth saturated with a material selected from the group consisting of silicon resin, silicon rubber and polybismaleic imide resin.
  • thermoplastic material is selected from the group consisting of silicon resin, silicon rubber and polybismaleic imide resin.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Induction Heating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
US460538A 1973-06-18 1974-04-12 Induction heat coil arrangement Expired - Lifetime US3898413A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2331004A DE2331004C3 (de) 1973-06-18 1973-06-18 Induktionsheizspule zum tiegelfreien Zonenschmelzen

Publications (1)

Publication Number Publication Date
US3898413A true US3898413A (en) 1975-08-05

Family

ID=5884356

Family Applications (1)

Application Number Title Priority Date Filing Date
US460538A Expired - Lifetime US3898413A (en) 1973-06-18 1974-04-12 Induction heat coil arrangement

Country Status (5)

Country Link
US (1) US3898413A (enrdf_load_stackoverflow)
JP (2) JPS5037346A (enrdf_load_stackoverflow)
BE (1) BE816495A (enrdf_load_stackoverflow)
DE (1) DE2331004C3 (enrdf_load_stackoverflow)
IT (1) IT1014933B (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4184135A (en) * 1978-04-10 1980-01-15 Monsanto Company Breakapart single turn RF induction apparatus
US5792258A (en) * 1995-01-31 1998-08-11 Shin-Etsu Handotai Co., Ltd. High-frequency induction heater and method of producing semiconductor single crystal using the same
WO1998046990A1 (en) * 1997-04-15 1998-10-22 Varian Associates, Inc. Improved cooling device for cooling heatable gas chromatography analyte sample injector
US20100277004A1 (en) * 2007-12-25 2010-11-04 Masayuki Suzuki Planar coil and contactless electric power transmission device using the same
US20110073591A1 (en) * 2008-07-17 2011-03-31 Seiichi Sawatsubashi Guide Chip Structure for High-Frequency Induction Heating Coil

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2357688C2 (de) * 1973-11-19 1982-11-18 Siemens AG, 1000 Berlin und 8000 München Induktionsheizspule zum tiegelfreien Zonenschmelzen
DE3229461A1 (de) * 1982-08-06 1984-02-09 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum tiegelfreien zonenschmelzen eines, insbesondere aus silicium bestehenden halbleiterstabes
DE4142245A1 (de) * 1991-12-17 1993-06-24 Tro Transformatoren Und Schalt Isolierung fuer induktoren von induktiven erhitzungsanlagen und verfahren zu ihrer herstellung
JP4581977B2 (ja) * 2005-11-24 2010-11-17 信越半導体株式会社 シリコン単結晶の製造方法
EP1968355B1 (de) 2007-03-08 2013-02-27 HÜTTINGER Elektronik GmbH + Co. KG Induktionsspule und Vorrichtung zum induktiven Erwärmen von Werkstücken
JP5505362B2 (ja) * 2011-04-21 2014-05-28 信越半導体株式会社 複巻誘導加熱コイル及びこれを有する単結晶製造装置並びにこれを用いた単結晶製造方法
JP5505365B2 (ja) * 2011-04-28 2014-05-28 信越半導体株式会社 誘導加熱コイルにおける放電防止用絶縁部材及びこれを用いた単結晶製造装置並びに単結晶製造方法
EP3995607A4 (en) 2019-07-05 2023-09-06 SUMCO Corporation INDUCTION HEATING COIL AND SINGLE CRYSTAL PRODUCTION DEVICE USING SAME

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2459971A (en) * 1945-08-30 1949-01-25 Induction Heating Corp Inductor for high-frequency induction heating apparatus
US3017485A (en) * 1957-11-19 1962-01-16 Asea Ab Means for electric vacuum furnaces
US3601569A (en) * 1968-10-11 1971-08-24 Siemens Ag Device for crucible-free or floating-zone melting a crystalline rod, especially a semiconductor rod
US3697716A (en) * 1971-11-19 1972-10-10 Gen Electric Induction cooking power converter with improved coil position
US3801769A (en) * 1971-11-24 1974-04-02 Siemens Ag Induction coil for zone melting of semiconductor rods
US3809846A (en) * 1972-04-11 1974-05-07 Siemens Ag Induction heating coil for a zone heating process

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1044768B (de) * 1954-03-02 1958-11-27 Siemens Ag Verfahren und Vorrichtung zum Ziehen eines stabfoermigen kristallinen Koerpers, vorzugsweise Halbleiterkoerpers
DE1205167C2 (de) * 1964-06-15 1973-05-03 Halbleiterwerk Frankfurt Oder Spulenkoerper zum induktiven Erhitzen eines elektrisch leitenden Koerpers im magnetischen Hochfrequenzfeld beim Zonenschmelzen
DE1615429C3 (de) * 1967-12-23 1974-08-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Induktionsheizspule zum tiegelfreien Zonenschmelzen von Stäben aus Halbleitermaterial

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2459971A (en) * 1945-08-30 1949-01-25 Induction Heating Corp Inductor for high-frequency induction heating apparatus
US3017485A (en) * 1957-11-19 1962-01-16 Asea Ab Means for electric vacuum furnaces
US3601569A (en) * 1968-10-11 1971-08-24 Siemens Ag Device for crucible-free or floating-zone melting a crystalline rod, especially a semiconductor rod
US3697716A (en) * 1971-11-19 1972-10-10 Gen Electric Induction cooking power converter with improved coil position
US3801769A (en) * 1971-11-24 1974-04-02 Siemens Ag Induction coil for zone melting of semiconductor rods
US3809846A (en) * 1972-04-11 1974-05-07 Siemens Ag Induction heating coil for a zone heating process

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4184135A (en) * 1978-04-10 1980-01-15 Monsanto Company Breakapart single turn RF induction apparatus
US5792258A (en) * 1995-01-31 1998-08-11 Shin-Etsu Handotai Co., Ltd. High-frequency induction heater and method of producing semiconductor single crystal using the same
WO1998046990A1 (en) * 1997-04-15 1998-10-22 Varian Associates, Inc. Improved cooling device for cooling heatable gas chromatography analyte sample injector
US20100277004A1 (en) * 2007-12-25 2010-11-04 Masayuki Suzuki Planar coil and contactless electric power transmission device using the same
US20110073591A1 (en) * 2008-07-17 2011-03-31 Seiichi Sawatsubashi Guide Chip Structure for High-Frequency Induction Heating Coil

Also Published As

Publication number Publication date
JPS5571170U (enrdf_load_stackoverflow) 1980-05-16
IT1014933B (it) 1977-04-30
DE2331004A1 (de) 1975-01-09
BE816495A (fr) 1974-10-16
DE2331004C3 (de) 1982-02-04
DE2331004B2 (de) 1981-05-21
JPS5755339Y2 (enrdf_load_stackoverflow) 1982-11-30
JPS5037346A (enrdf_load_stackoverflow) 1975-04-08

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