US3842794A - Apparatus for high temperature semiconductor processing - Google Patents

Apparatus for high temperature semiconductor processing Download PDF

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Publication number
US3842794A
US3842794A US00375190A US37519073A US3842794A US 3842794 A US3842794 A US 3842794A US 00375190 A US00375190 A US 00375190A US 37519073 A US37519073 A US 37519073A US 3842794 A US3842794 A US 3842794A
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United States
Prior art keywords
furnace
tube
range
radiant heat
walls
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Expired - Lifetime
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US00375190A
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English (en)
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P Ing
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International Business Machines Corp
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International Business Machines Corp
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Publication date
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Priority to US00375190A priority Critical patent/US3842794A/en
Priority to FR7415812A priority patent/FR2235487B1/fr
Priority to JP49063003A priority patent/JPS5024074A/ja
Priority to GB2640574A priority patent/GB1420550A/en
Priority to DE2430432A priority patent/DE2430432A1/de
Priority to US05/486,555 priority patent/US3943015A/en
Application granted granted Critical
Publication of US3842794A publication Critical patent/US3842794A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C30B31/103—Mechanisms for moving either the charge or heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D11/00—Arrangement of elements for electric heating in or on furnaces
    • F27D11/02—Ohmic resistance heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping

Definitions

  • ABSTRACT [52] U.S. 118/49 [51] Int. C23c 13/08 [58] Field of Search A low thermal mass furnace with minim la ized thermal g and maximum thermal response for high tempera- [56] References Cited UNITED STATES PATENTS ture processing of semiconductor substrates.
  • FIG 3' is a diagrammatic representation of FIG.
  • the invention comprehends a furnace structure of minimized thermal mass utilizing flat parallel radiant heat diffuser plates juxtaposed in close proximity on opposite sides of coextending semicons ductor wafers supported on radiant heat opaque and absorbing plate disposed within a chamber defined within a radiant heat transparent tube.
  • the processing tube is of rectangular configuration with an optimized aspect ratio of height to width to enable an even flow of gasses across the wafers during processing cycles.
  • the opaque'radiant heat absorbing support is radiantly heated by an adjacent heater plate means while concurrently an opposite heater plate means is similarly heating the support by transmission of the radiant heat through the wafer, whereby 30 to 70 percent of the heating thereof is by conduction from its support.
  • a further object of this invention is a novel furnace characterized with flexibility to change temperaturesso as to adapt the furnace to in-situ multiprocessing capabilities which normally require a pluralityof conventional furnaces with attendant ambient temperature exposure on transfer of wafers between them.
  • An additional object of this invention is to provide a novel furnace of simplified design characterized with low capital cost having provision for gas processing atmospheres and which is easy to maintain, replace and replicate.
  • a still further object of this invention is a novel furnace adapted to process semiconductor wafers of various sizes.
  • FIG. 1 is a perspective view, partly in section, of one embodiment of this invention.
  • FIG. 1A is an explanatory drawing of details of the embodiment of FIG. 1.
  • FIG. 2 is a perspective view, partly in section of a modifiedreactor tube employed in this invention.
  • FIG. 3 is a static profile of the thermal characteristics of a furnace in accordance with this invention.
  • FIG. 4 is a dynamic profile of dynamic thermal characteristics of a furnace in accordance with this invention.
  • the furnace of the invention in the basic configuration comprises a cabinet I through which extends a radiant heat transparent processing tube 2 as for example, a quartz'tube havingwalls of Va inch thickness, and defining within it a high temperature processing chamber 3.
  • the tube as shown is of rectangular cross-section having an internal width in the range of about 1.3 inches to 20 inches and an internal height in the range of about 3/ 16 inches to about 1 inch. In a typical application, the tube can have an internal width and height of 7.12 inches and 0.50 inches, respectively, and an overall length of 23 inches.
  • One end 4 of tube 2 is open, and the other end 5 is tapered and provided with a gas inlet 6 connected through suitable valving to required processing gas sources.
  • baffle 7 extending to within a range of about 30 mils to about one fourth inch from the inner surface 8 of the tube bottom wall 9.
  • a second baffle 10 also projects upwardly from the bottom tube wall 9 to define a gap with the inner surface of tube top wall 11 in the range of about 30 mils to about 1/4 inch.
  • the top wall 11 and bottom wall 9, of tube 2 extend in spaced parallel relationship to each other, with baffles 7 and 10 extending across the width of tube 2.
  • each of baffles 7 and 10 defined gaps of about 55 mils with the tube walls toward which they project.
  • the upwardly projecting baffle 10 can function if desired as a-stop of a wafer support or boat 12 which is inserted into the interior of tube 2 for positioning wafers 13 (of about 15 to 18 mils thickness) therein for processing.
  • the support 12 is preferably opaque to and absorbing of radiant heat supplied by a plurality of radiant heat diffuser plates 14, normally comprised of four plates units 14 juxtaposed on top of tube 2, and four plate units juxtaposed at the bottom of tube 2 (see FIG. 3).
  • the thickness of wafer support or boat 12 will have a thickness which will position wafers 13 in parallel relationship to the tube top and bottom walls 9 and 11, respectively, and also substantially midway therebetween.
  • the wafer boat 12 can be ofquartz which is rendered opaque to radiant heat by surface roughening and will have a thickness in the range of about one sixteenth inch to about one fourth inch. For a specific furnace design the boat 12 was provided with a thickness of about 0.125 inches.
  • Boat or support 12 is also formed with a groove 40 for operative engagement with a lip 41 from a front portion 42 of a boat handler or pusher unit 43 employed for inserting and withdrawing support 12 into and from the processing tube 2.
  • Front portion 42 is attached by tie rods 45 to a rear plug portion 44 which is received in the tube to restrict exit of processing gasses out of the processing tube 2.
  • Handling of the pusher unit 43 is facilitated by means of a handle 46 formed on the exposed face of the plug unit 44.
  • the plug unit 44 is dimensioned to provide about a 30 to 60 mil clearance with the inner surfaces of processing tube 2.
  • all components of the pusher unit 43 can be fabricated of quartz.
  • Critical for purposes of this invention is the resultant spacing (S) between the inner surface of tube top wall 11 and the top surface of wafers 13 at which they are positioned by support or boat 12.
  • the ratio of such spacing to the inner width (W) of tube 2 defines a critical aspect ratio (W/S) which in conjunction with baffles 7 and 10 control gas in even flow in distribution through the processing length of tube 2 and across the top surfaces of wafer 13 without any dead or stagnant flow areas.
  • W/S critical aspect ratio
  • the height of or spacing between the inner surface of tube top wall 11 and the wafers will be in the general range of about one eighth inch to about three fourth inch, and it is necessary that this spacing (S) conform to aspect ratio W/S relative to the internal width (W)'of the tube 2.
  • the aspect ratio W/S can be in the range of about 7 to about 30, and optimallyabout l8.
  • a throttle baffle l6 projecting downwardly from the tube top wall 11 to restrict gas flows towardoutlet tubes 17 through which they are exhausted from tube 2 with assist from back pressure generated by injection of an inert gas through inlet ports 18 from a common manifold 19 fed from the gas inlet tube 20.
  • the radiant heat diffuser plate means 14 is formed of electrically insulating material characterized with a relatively high thermal conductivity in the ranging about 0.3 to about 4 (Btu/Hr-Ft- F) typical of which is aluminum oxide (A1 0 of relatively high purity, mulite with approximately 25 percentup to 96 percent A1 0 and the like.
  • the back sides of diffuser plate means 14, are formed with mounting grooves 25 through which are threaded a helical resistance element 26 for generating the primary heating energy for'radiant heat diffusion by the secondary heater plate means 14. Controlof heat generation is obtained by means of conventional thermocouples which extend into the furnace with the exposed sensing bead disposed between the heater plate means 14 and the reactor tube 2 opposite wafers 13, as shown.
  • any suitable insulating material 28 Surrounding the heater units and reactor tube 2 is any suitable insulating material 28 having a mass of about to about 34 pounds and a thermal conductivity in the range of about 0.08 to about 0.1 l (Btu/Hr-Ft- F) enclosed within a casing 29 for packaging of the furnace.
  • a particularly advantageous insulating material is fibrous aluminum silicate (available from the Eagle-Picker Co. of Cincinnati, Ohio) which is lightweight, dimensionally stable and very efficient and having one-half of the thermal conductivity of firebrick at l,00() C. Another advantage of this ceramic fibrous material is that itis available in blocks which can be suitably shaped about its enclosed contents.
  • FIG. 2 illustrates another embodiment of the'invention utilizing a modified reactor tube 2A which can be employed with processing gasses compatible with ambient atmospheres (e.g., oxygen).
  • the exhaust ports 17 are omitted as well as the backflow gas entry inlet 20 and ports 18.
  • the gas is discharged into the atmosphere from the loading end of reactor tube 2A.
  • reactor tube 2A has substantially the same configuration as reactor tube 2 required for purposes of this invention.
  • Curves l and 2 are outputs from the control thermocouples embedded in the heater elements at the rpective zones shown in the drawing. (Alternatively, control thermocouple may be located between heater plate and process tube.)
  • Curves 3 and 4 are outputs from thermocouples resting directly over the center of two wafer positions on the process boat, as for the static profile above. Curve 3 is taken in zone 1 and curve 4 taken in zone 2. As can be seen, in both zones, the heater elements and wafer position tracked substantially identically.
  • silicon substrates 13 with gate openings are placed on boat 12 and inserted into the first" furnace heated to l,000 C for a process cycle time of about 72 minutes with dry oxygen flowing through the reactor tube 2A at a rate of 1,300 cc./mm.
  • a dry gate silicon oxide is grown on the 5 66 minutes are feasible with temperature wafer 13, after which the boat 12 is transferred immediately to a second" furnace, at a temperature of 840 C where for a 2-5 minute stabilization period 1182 cc/min of nitrogen and 1 l8 cc/min of oxygen is passed through the reactor tube 2 (e.g., FIG. 1) by injection through feed nozzle 6 in conjunction with a back flow of 945 cc/min of nitrogen injection through back-flow ports 18.
  • a dopant gas is then also added into reactor tube 2 (via inlet nozzle 6) which was comprised of cc/min of nitrogen containing 440 ppm of POCl for 5 to 7 minutes to deposit a phosphosilicate glass (PSG) on the substrate at the 840 C temperature.
  • PSG phosphosilicate glass
  • the oxygen and the POCI doped nitrogen gasses were valve-off, and the furnace temperature was ramped to l,050 C over a 15 minute anneal period to stabilize surface charges and distribute the phosphorous impurities through the silicon oxide coating on the substrate.
  • the furnace was ramped down to 840 C. Meanwhile, the boat was withdrawn for cooling of wafers in the ambient.
  • the resultant SiO and PSG combined thickness wassubstantially 675 Angstroms with a PSG thickness of l 10 Angstroms. 1
  • a furnace for processing semiconductor wafers comprising:
  • the internal width between the side walls of said tube being in the range of about 1 Va to about inches
  • D. gas diffuser means for constraining an injected gas in even flow through and across said tube having at least one said wafer disposed therein on said support;
  • first and second planar radiant heat diffuser means juxtaposed externally in parallel relationship on respective ones of said top and bottom walls;
  • the furnace of claim 1 including means disposed externally of said tube for forced cooling of said furnace.
  • the furnace of claim 2 including means disposed externally of said tube for forced cooling of said furnace.
  • the furnace of claim 3 including means disposed externally of said tube for forced cooling of said furnace.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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US00375190A 1973-06-29 1973-06-29 Apparatus for high temperature semiconductor processing Expired - Lifetime US3842794A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US00375190A US3842794A (en) 1973-06-29 1973-06-29 Apparatus for high temperature semiconductor processing
FR7415812A FR2235487B1 (OSRAM) 1973-06-29 1974-04-29
JP49063003A JPS5024074A (OSRAM) 1973-06-29 1974-06-05
GB2640574A GB1420550A (en) 1973-06-29 1974-06-14 Semiconductor processing furnaces
DE2430432A DE2430432A1 (de) 1973-06-29 1974-06-25 Rohrofen mit einem gasdurchstroemten reaktionsrohr
US05/486,555 US3943015A (en) 1973-06-29 1974-07-08 Method for high temperature semiconductor processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00375190A US3842794A (en) 1973-06-29 1973-06-29 Apparatus for high temperature semiconductor processing

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Application Number Title Priority Date Filing Date
US05/486,555 Division US3943015A (en) 1973-06-29 1974-07-08 Method for high temperature semiconductor processing

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US3842794A true US3842794A (en) 1974-10-22

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US00375190A Expired - Lifetime US3842794A (en) 1973-06-29 1973-06-29 Apparatus for high temperature semiconductor processing

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US (1) US3842794A (OSRAM)
JP (1) JPS5024074A (OSRAM)
DE (1) DE2430432A1 (OSRAM)
FR (1) FR2235487B1 (OSRAM)
GB (1) GB1420550A (OSRAM)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239560A (en) * 1979-05-21 1980-12-16 General Electric Company Open tube aluminum oxide disc diffusion
FR2526224A1 (fr) * 1982-05-03 1983-11-04 Gca Corp Appareil de traitement thermique de pastilles semi-conductrices
US4492852A (en) * 1983-02-11 1985-01-08 At&T Bell Laboratories Growth substrate heating arrangement for UHV silicon MBE
EP0134716A1 (en) * 1983-08-29 1985-03-20 Varian Associates, Inc. Process for high temperature drive-in diffusion of dopants into semiconductor wafers
US4554437A (en) * 1984-05-17 1985-11-19 Pet Incorporated Tunnel oven
US5059770A (en) * 1989-09-19 1991-10-22 Watkins-Johnson Company Multi-zone planar heater assembly and method of operation
US5892203A (en) * 1996-05-29 1999-04-06 International Business Machines Corporation Apparatus for making laminated integrated circuit devices
US20050133159A1 (en) * 2001-04-12 2005-06-23 Johnsgard Kristian E. Systems and methods for epitaxially depositing films on a semiconductor substrate
US20120236067A1 (en) * 2011-03-15 2012-09-20 Ricoh Company, Ltd. Droplet-discharging-head manufacturing apparatus, droplet-discharging-head manufacutring method, droplet discharging head, droplet discharging device, and printing apparatus

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2492960A1 (fr) * 1980-10-23 1982-04-30 Efcis Canne refractaire pour l'introduction et le retrait d'une nacelle dans un four de traitement chimique sous flux gazeux, et four utilisant une telle canne
JPS57176717A (en) * 1981-04-24 1982-10-30 Hitachi Ltd Vapor phase growing device
FR2522534A1 (fr) * 1982-03-05 1983-09-09 Atelier Electro Thermie Const Procede de refroidissement et dispositif de traitement d'une charge telle que des substrats mettant en oeuvre ce procede de refroidissement
JPS58130520A (ja) * 1982-12-24 1983-08-04 Hitachi Ltd 熱処理炉用操作部
DE19547601A1 (de) * 1995-12-20 1997-06-26 Sel Alcatel Ag Vorrichtung zum Sintern von porösen Schichten

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE760041A (fr) * 1970-01-02 1971-05-17 Ibm Procede et appareil de transfert de masse gazeuse
FR2114105A5 (en) * 1970-11-16 1972-06-30 Applied Materials Techno Epitaxial radiation heated reactor - including a quartz reaction chamber
US3737282A (en) * 1971-10-01 1973-06-05 Ibm Method for reducing crystallographic defects in semiconductor structures

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239560A (en) * 1979-05-21 1980-12-16 General Electric Company Open tube aluminum oxide disc diffusion
FR2526224A1 (fr) * 1982-05-03 1983-11-04 Gca Corp Appareil de traitement thermique de pastilles semi-conductrices
US4492852A (en) * 1983-02-11 1985-01-08 At&T Bell Laboratories Growth substrate heating arrangement for UHV silicon MBE
EP0134716A1 (en) * 1983-08-29 1985-03-20 Varian Associates, Inc. Process for high temperature drive-in diffusion of dopants into semiconductor wafers
US4554437A (en) * 1984-05-17 1985-11-19 Pet Incorporated Tunnel oven
US5059770A (en) * 1989-09-19 1991-10-22 Watkins-Johnson Company Multi-zone planar heater assembly and method of operation
US5892203A (en) * 1996-05-29 1999-04-06 International Business Machines Corporation Apparatus for making laminated integrated circuit devices
US20050133159A1 (en) * 2001-04-12 2005-06-23 Johnsgard Kristian E. Systems and methods for epitaxially depositing films on a semiconductor substrate
US20120236067A1 (en) * 2011-03-15 2012-09-20 Ricoh Company, Ltd. Droplet-discharging-head manufacturing apparatus, droplet-discharging-head manufacutring method, droplet discharging head, droplet discharging device, and printing apparatus
US8684493B2 (en) * 2011-03-15 2014-04-01 Ricoh Company, Ltd. Droplet-discharging-head manufacturing apparatus, droplet-discharging-head manufacturing method, droplet discharging head, droplet discharging device, and printing apparatus

Also Published As

Publication number Publication date
GB1420550A (en) 1976-01-07
JPS5024074A (OSRAM) 1975-03-14
FR2235487A1 (OSRAM) 1975-01-24
DE2430432A1 (de) 1975-01-16
FR2235487B1 (OSRAM) 1976-06-25

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