US3842794A - Apparatus for high temperature semiconductor processing - Google Patents
Apparatus for high temperature semiconductor processing Download PDFInfo
- Publication number
- US3842794A US3842794A US00375190A US37519073A US3842794A US 3842794 A US3842794 A US 3842794A US 00375190 A US00375190 A US 00375190A US 37519073 A US37519073 A US 37519073A US 3842794 A US3842794 A US 3842794A
- Authority
- US
- United States
- Prior art keywords
- furnace
- tube
- range
- radiant heat
- walls
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000012545 processing Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 235000012431 wafers Nutrition 0.000 claims description 29
- 238000001816 cooling Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 238000012856 packing Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 5
- 230000004044 response Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000005360 phosphosilicate glass Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
- C30B31/103—Mechanisms for moving either the charge or heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/12—Heating of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/005—Oxydation
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D11/00—Arrangement of elements for electric heating in or on furnaces
- F27D11/02—Ohmic resistance heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S118/00—Coating apparatus
- Y10S118/90—Semiconductor vapor doping
Definitions
- ABSTRACT [52] U.S. 118/49 [51] Int. C23c 13/08 [58] Field of Search A low thermal mass furnace with minim la ized thermal g and maximum thermal response for high tempera- [56] References Cited UNITED STATES PATENTS ture processing of semiconductor substrates.
- FIG 3' is a diagrammatic representation of FIG.
- the invention comprehends a furnace structure of minimized thermal mass utilizing flat parallel radiant heat diffuser plates juxtaposed in close proximity on opposite sides of coextending semicons ductor wafers supported on radiant heat opaque and absorbing plate disposed within a chamber defined within a radiant heat transparent tube.
- the processing tube is of rectangular configuration with an optimized aspect ratio of height to width to enable an even flow of gasses across the wafers during processing cycles.
- the opaque'radiant heat absorbing support is radiantly heated by an adjacent heater plate means while concurrently an opposite heater plate means is similarly heating the support by transmission of the radiant heat through the wafer, whereby 30 to 70 percent of the heating thereof is by conduction from its support.
- a further object of this invention is a novel furnace characterized with flexibility to change temperaturesso as to adapt the furnace to in-situ multiprocessing capabilities which normally require a pluralityof conventional furnaces with attendant ambient temperature exposure on transfer of wafers between them.
- An additional object of this invention is to provide a novel furnace of simplified design characterized with low capital cost having provision for gas processing atmospheres and which is easy to maintain, replace and replicate.
- a still further object of this invention is a novel furnace adapted to process semiconductor wafers of various sizes.
- FIG. 1 is a perspective view, partly in section, of one embodiment of this invention.
- FIG. 1A is an explanatory drawing of details of the embodiment of FIG. 1.
- FIG. 2 is a perspective view, partly in section of a modifiedreactor tube employed in this invention.
- FIG. 3 is a static profile of the thermal characteristics of a furnace in accordance with this invention.
- FIG. 4 is a dynamic profile of dynamic thermal characteristics of a furnace in accordance with this invention.
- the furnace of the invention in the basic configuration comprises a cabinet I through which extends a radiant heat transparent processing tube 2 as for example, a quartz'tube havingwalls of Va inch thickness, and defining within it a high temperature processing chamber 3.
- the tube as shown is of rectangular cross-section having an internal width in the range of about 1.3 inches to 20 inches and an internal height in the range of about 3/ 16 inches to about 1 inch. In a typical application, the tube can have an internal width and height of 7.12 inches and 0.50 inches, respectively, and an overall length of 23 inches.
- One end 4 of tube 2 is open, and the other end 5 is tapered and provided with a gas inlet 6 connected through suitable valving to required processing gas sources.
- baffle 7 extending to within a range of about 30 mils to about one fourth inch from the inner surface 8 of the tube bottom wall 9.
- a second baffle 10 also projects upwardly from the bottom tube wall 9 to define a gap with the inner surface of tube top wall 11 in the range of about 30 mils to about 1/4 inch.
- the top wall 11 and bottom wall 9, of tube 2 extend in spaced parallel relationship to each other, with baffles 7 and 10 extending across the width of tube 2.
- each of baffles 7 and 10 defined gaps of about 55 mils with the tube walls toward which they project.
- the upwardly projecting baffle 10 can function if desired as a-stop of a wafer support or boat 12 which is inserted into the interior of tube 2 for positioning wafers 13 (of about 15 to 18 mils thickness) therein for processing.
- the support 12 is preferably opaque to and absorbing of radiant heat supplied by a plurality of radiant heat diffuser plates 14, normally comprised of four plates units 14 juxtaposed on top of tube 2, and four plate units juxtaposed at the bottom of tube 2 (see FIG. 3).
- the thickness of wafer support or boat 12 will have a thickness which will position wafers 13 in parallel relationship to the tube top and bottom walls 9 and 11, respectively, and also substantially midway therebetween.
- the wafer boat 12 can be ofquartz which is rendered opaque to radiant heat by surface roughening and will have a thickness in the range of about one sixteenth inch to about one fourth inch. For a specific furnace design the boat 12 was provided with a thickness of about 0.125 inches.
- Boat or support 12 is also formed with a groove 40 for operative engagement with a lip 41 from a front portion 42 of a boat handler or pusher unit 43 employed for inserting and withdrawing support 12 into and from the processing tube 2.
- Front portion 42 is attached by tie rods 45 to a rear plug portion 44 which is received in the tube to restrict exit of processing gasses out of the processing tube 2.
- Handling of the pusher unit 43 is facilitated by means of a handle 46 formed on the exposed face of the plug unit 44.
- the plug unit 44 is dimensioned to provide about a 30 to 60 mil clearance with the inner surfaces of processing tube 2.
- all components of the pusher unit 43 can be fabricated of quartz.
- Critical for purposes of this invention is the resultant spacing (S) between the inner surface of tube top wall 11 and the top surface of wafers 13 at which they are positioned by support or boat 12.
- the ratio of such spacing to the inner width (W) of tube 2 defines a critical aspect ratio (W/S) which in conjunction with baffles 7 and 10 control gas in even flow in distribution through the processing length of tube 2 and across the top surfaces of wafer 13 without any dead or stagnant flow areas.
- W/S critical aspect ratio
- the height of or spacing between the inner surface of tube top wall 11 and the wafers will be in the general range of about one eighth inch to about three fourth inch, and it is necessary that this spacing (S) conform to aspect ratio W/S relative to the internal width (W)'of the tube 2.
- the aspect ratio W/S can be in the range of about 7 to about 30, and optimallyabout l8.
- a throttle baffle l6 projecting downwardly from the tube top wall 11 to restrict gas flows towardoutlet tubes 17 through which they are exhausted from tube 2 with assist from back pressure generated by injection of an inert gas through inlet ports 18 from a common manifold 19 fed from the gas inlet tube 20.
- the radiant heat diffuser plate means 14 is formed of electrically insulating material characterized with a relatively high thermal conductivity in the ranging about 0.3 to about 4 (Btu/Hr-Ft- F) typical of which is aluminum oxide (A1 0 of relatively high purity, mulite with approximately 25 percentup to 96 percent A1 0 and the like.
- the back sides of diffuser plate means 14, are formed with mounting grooves 25 through which are threaded a helical resistance element 26 for generating the primary heating energy for'radiant heat diffusion by the secondary heater plate means 14. Controlof heat generation is obtained by means of conventional thermocouples which extend into the furnace with the exposed sensing bead disposed between the heater plate means 14 and the reactor tube 2 opposite wafers 13, as shown.
- any suitable insulating material 28 Surrounding the heater units and reactor tube 2 is any suitable insulating material 28 having a mass of about to about 34 pounds and a thermal conductivity in the range of about 0.08 to about 0.1 l (Btu/Hr-Ft- F) enclosed within a casing 29 for packaging of the furnace.
- a particularly advantageous insulating material is fibrous aluminum silicate (available from the Eagle-Picker Co. of Cincinnati, Ohio) which is lightweight, dimensionally stable and very efficient and having one-half of the thermal conductivity of firebrick at l,00() C. Another advantage of this ceramic fibrous material is that itis available in blocks which can be suitably shaped about its enclosed contents.
- FIG. 2 illustrates another embodiment of the'invention utilizing a modified reactor tube 2A which can be employed with processing gasses compatible with ambient atmospheres (e.g., oxygen).
- the exhaust ports 17 are omitted as well as the backflow gas entry inlet 20 and ports 18.
- the gas is discharged into the atmosphere from the loading end of reactor tube 2A.
- reactor tube 2A has substantially the same configuration as reactor tube 2 required for purposes of this invention.
- Curves l and 2 are outputs from the control thermocouples embedded in the heater elements at the rpective zones shown in the drawing. (Alternatively, control thermocouple may be located between heater plate and process tube.)
- Curves 3 and 4 are outputs from thermocouples resting directly over the center of two wafer positions on the process boat, as for the static profile above. Curve 3 is taken in zone 1 and curve 4 taken in zone 2. As can be seen, in both zones, the heater elements and wafer position tracked substantially identically.
- silicon substrates 13 with gate openings are placed on boat 12 and inserted into the first" furnace heated to l,000 C for a process cycle time of about 72 minutes with dry oxygen flowing through the reactor tube 2A at a rate of 1,300 cc./mm.
- a dry gate silicon oxide is grown on the 5 66 minutes are feasible with temperature wafer 13, after which the boat 12 is transferred immediately to a second" furnace, at a temperature of 840 C where for a 2-5 minute stabilization period 1182 cc/min of nitrogen and 1 l8 cc/min of oxygen is passed through the reactor tube 2 (e.g., FIG. 1) by injection through feed nozzle 6 in conjunction with a back flow of 945 cc/min of nitrogen injection through back-flow ports 18.
- a dopant gas is then also added into reactor tube 2 (via inlet nozzle 6) which was comprised of cc/min of nitrogen containing 440 ppm of POCl for 5 to 7 minutes to deposit a phosphosilicate glass (PSG) on the substrate at the 840 C temperature.
- PSG phosphosilicate glass
- the oxygen and the POCI doped nitrogen gasses were valve-off, and the furnace temperature was ramped to l,050 C over a 15 minute anneal period to stabilize surface charges and distribute the phosphorous impurities through the silicon oxide coating on the substrate.
- the furnace was ramped down to 840 C. Meanwhile, the boat was withdrawn for cooling of wafers in the ambient.
- the resultant SiO and PSG combined thickness wassubstantially 675 Angstroms with a PSG thickness of l 10 Angstroms. 1
- a furnace for processing semiconductor wafers comprising:
- the internal width between the side walls of said tube being in the range of about 1 Va to about inches
- D. gas diffuser means for constraining an injected gas in even flow through and across said tube having at least one said wafer disposed therein on said support;
- first and second planar radiant heat diffuser means juxtaposed externally in parallel relationship on respective ones of said top and bottom walls;
- the furnace of claim 1 including means disposed externally of said tube for forced cooling of said furnace.
- the furnace of claim 2 including means disposed externally of said tube for forced cooling of said furnace.
- the furnace of claim 3 including means disposed externally of said tube for forced cooling of said furnace.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
Abstract
A low thermal mass furnace with minimized thermal lag and maximum thermal response for high temperature processing of semiconductor substrates.
Description
[ Oct. 22, 1974 United States Patent [191 Ing 1l8/49.5 X 13/22 ll8/49.5 118/48 X 118/48 1m MM-1"" a m w m r efl .m m m a Hh m m ml en e KrM- uc e .|.1 0O GNWWFC 467723 666677 999999 111111 WWHWWW 1 644 0 075 42 mnm 99 APPARATUS FOR HIGH TEMPERATURE SEMICONDUCTOR PROCESSING [75] Inventor: Paul W. Ing, Poughkeepsie, NY. [73] Assignee: International Business Machines Corporation, Armonk, NY.
June 29, 1973 [22] Filed:
Primary Examiner-Morris Kaplan Attorney, Agent, or Firm-Henry Powers 21 Appl. No.: 375,190
ABSTRACT [52] U.S. 118/49 [51] Int. C23c 13/08 [58] Field of Search A low thermal mass furnace with minim la ized thermal g and maximum thermal response for high tempera- [56] References Cited UNITED STATES PATENTS ture processing of semiconductor substrates.
8 Claims, 5 Drawing Figures 3,098,763 7/1963 Deal et al. 118/495 FIG.- 2
FIG 3'.
STATIC PROFILE APPARATUS FOR HIGH TEMPERATURE SEMICONDUCTOR PROCESSING FIELD OF THE INVENTION DESCRIPTION OF THE PRIOR ART 7 High temperature furnaces have found extensive use in the fabrication of semiconductor devices, as for example, in oxidation, diffusion, epitaxi operations and the like. Heretofore such furnaces have been compromised adaptations of those employed in other arts, and which are characterized with massive configurations, very high thermal mass and thermal inertia during heating and cooling cycles for purposes of maintaining flat thermal profiles during operations thereof. Typical furnace structures are described in US. Pat. Nos. 2661,385, 2,825,222, 3,264,148, 3,299,196, 3,296,354 and 3,343,518.
SUMMARY OF THE INVENTION Broadly speaking, the invention comprehends a furnace structure of minimized thermal mass utilizing flat parallel radiant heat diffuser plates juxtaposed in close proximity on opposite sides of coextending semicons ductor wafers supported on radiant heat opaque and absorbing plate disposed within a chamber defined within a radiant heat transparent tube. The processing tube is of rectangular configuration with an optimized aspect ratio of height to width to enable an even flow of gasses across the wafers during processing cycles. In operation, the opaque'radiant heat absorbing support is radiantly heated by an adjacent heater plate means while concurrently an opposite heater plate means is similarly heating the support by transmission of the radiant heat through the wafer, whereby 30 to 70 percent of the heating thereof is by conduction from its support.
Accordingly, it is an object of this invention to provide a low thermal mass furnace in conjunction with fast ramp times to facilitate rapid change of temperature levels for heating and cooling of wafers without need to expose them to shock in ambient temperatures.
A further object of this invention is a novel furnace characterized with flexibility to change temperaturesso as to adapt the furnace to in-situ multiprocessing capabilities which normally require a pluralityof conventional furnaces with attendant ambient temperature exposure on transfer of wafers between them. An additional object of this invention is to provide a novel furnace of simplified design characterized with low capital cost having provision for gas processing atmospheres and which is easy to maintain, replace and replicate. A still further object of this invention is a novel furnace adapted to process semiconductor wafers of various sizes.
The foregoing and other objects, features, and advantages of the invention will be apparent from the following more particular description of preferred embodiments of the invention as illustrated in the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS I FIG. 1 is a perspective view, partly in section, of one embodiment of this invention.
FIG. 1A is an explanatory drawing of details of the embodiment of FIG. 1.
FIG. 2 is a perspective view, partly in section of a modifiedreactor tube employed in this invention.
FIG. 3 is a static profile of the thermal characteristics of a furnace in accordance with this invention.
FIG. 4 is a dynamic profile of dynamic thermal characteristics of a furnace in accordance with this invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in the drawings, the furnace of the invention in the basic configuration comprises a cabinet I through which extends a radiant heat transparent processing tube 2 as for example, a quartz'tube havingwalls of Va inch thickness, and defining within it a high temperature processing chamber 3. The tube as shown, is of rectangular cross-section having an internal width in the range of about 1.3 inches to 20 inches and an internal height in the range of about 3/ 16 inches to about 1 inch. In a typical application, the tube can have an internal width and height of 7.12 inches and 0.50 inches, respectively, and an overall length of 23 inches. One end 4 of tube 2 is open, and the other end 5 is tapered and provided with a gas inlet 6 connected through suitable valving to required processing gas sources. Included within tube 2, adjacent its tapered end 5, is a downwardly projecting baffle 7 extending to within a range of about 30 mils to about one fourth inch from the inner surface 8 of the tube bottom wall 9. A second baffle 10 also projects upwardly from the bottom tube wall 9 to define a gap with the inner surface of tube top wall 11 in the range of about 30 mils to about 1/4 inch. In general the top wall 11 and bottom wall 9, of tube 2, extend in spaced parallel relationship to each other, with baffles 7 and 10 extending across the width of tube 2. For a specific processing application described below, each of baffles 7 and 10 defined gaps of about 55 mils with the tube walls toward which they project.
The upwardly projecting baffle 10 can function if desired as a-stop of a wafer support or boat 12 which is inserted into the interior of tube 2 for positioning wafers 13 (of about 15 to 18 mils thickness) therein for processing. For purposes of this invention, the support 12 is preferably opaque to and absorbing of radiant heat supplied by a plurality of radiant heat diffuser plates 14, normally comprised of four plates units 14 juxtaposed on top of tube 2, and four plate units juxtaposed at the bottom of tube 2 (see FIG. 3). Normally, the thickness of wafer support or boat 12 will have a thickness which will position wafers 13 in parallel relationship to the tube top and bottom walls 9 and 11, respectively, and also substantially midway therebetween. Typically, the wafer boat 12 can be ofquartz which is rendered opaque to radiant heat by surface roughening and will have a thickness in the range of about one sixteenth inch to about one fourth inch. For a specific furnace design the boat 12 was provided with a thickness of about 0.125 inches.
Boat or support 12 is also formed with a groove 40 for operative engagement with a lip 41 from a front portion 42 of a boat handler or pusher unit 43 employed for inserting and withdrawing support 12 into and from the processing tube 2. Front portion 42 is attached by tie rods 45 to a rear plug portion 44 which is received in the tube to restrict exit of processing gasses out of the processing tube 2. Handling of the pusher unit 43 is facilitated by means of a handle 46 formed on the exposed face of the plug unit 44. In general the plug unit 44 is dimensioned to provide about a 30 to 60 mil clearance with the inner surfaces of processing tube 2. Also, all components of the pusher unit 43 can be fabricated of quartz.
Critical for purposes of this invention, is the resultant spacing (S) between the inner surface of tube top wall 11 and the top surface of wafers 13 at which they are positioned by support or boat 12. The ratio of such spacing to the inner width (W) of tube 2 defines a critical aspect ratio (W/S) which in conjunction with baffles 7 and 10 control gas in even flow in distribution through the processing length of tube 2 and across the top surfaces of wafer 13 without any dead or stagnant flow areas. In general, the height of or spacing between the inner surface of tube top wall 11 and the wafers will be in the general range of about one eighth inch to about three fourth inch, and it is necessary that this spacing (S) conform to aspect ratio W/S relative to the internal width (W)'of the tube 2. In general, the aspect ratio W/S can be in the range of about 7 to about 30, and optimallyabout l8.
' "Also included within tubes 2 is a throttle baffle l6 projecting downwardly from the tube top wall 11 to restrict gas flows towardoutlet tubes 17 through which they are exhausted from tube 2 with assist from back pressure generated by injection of an inert gas through inlet ports 18 from a common manifold 19 fed from the gas inlet tube 20.
The radiant heat diffuser plate means 14 is formed of electrically insulating material characterized with a relatively high thermal conductivity in the ranging about 0.3 to about 4 (Btu/Hr-Ft- F) typical of which is aluminum oxide (A1 0 of relatively high purity, mulite with approximately 25 percentup to 96 percent A1 0 and the like. The back sides of diffuser plate means 14, are formed with mounting grooves 25 through which are threaded a helical resistance element 26 for generating the primary heating energy for'radiant heat diffusion by the secondary heater plate means 14. Controlof heat generation is obtained by means of conventional thermocouples which extend into the furnace with the exposed sensing bead disposed between the heater plate means 14 and the reactor tube 2 opposite wafers 13, as shown.
Surrounding the heater units and reactor tube 2 is any suitable insulating material 28 having a mass of about to about 34 pounds and a thermal conductivity in the range of about 0.08 to about 0.1 l (Btu/Hr-Ft- F) enclosed within a casing 29 for packaging of the furnace. A particularly advantageous insulating material is fibrous aluminum silicate (available from the Eagle-Picker Co. of Cincinnati, Ohio) which is lightweight, dimensionally stable and very efficient and having one-half of the thermal conductivity of firebrick at l,00() C. Another advantage of this ceramic fibrous material is that itis available in blocks which can be suitably shaped about its enclosed contents.
FIG. 2 illustrates another embodiment of the'invention utilizing a modified reactor tube 2A which can be employed with processing gasses compatible with ambient atmospheres (e.g., oxygen). In the modification, the exhaust ports 17 are omitted as well as the backflow gas entry inlet 20 and ports 18. In use the gas is discharged into the atmosphere from the loading end of reactor tube 2A. In all other aspects, reactor tube 2A has substantially the same configuration as reactor tube 2 required for purposes of this invention.
FIG. 3 is a static profile map of the thermal characteristics of a furnace in accordance with this invention (e.g., FIG. 1) with gas flowing through the reactor tube 2 at rates noted below in one example of processing silicon semiconductor wafers. The thermocouples employed had exposed beads directly over the wafer boat 12 about one sixteenth inch from contact, and with at least two minute stabilization times used between readings. Also thermal mapping is in terms of temperature at points in contrast to large areas as conventionally employed with N enclosed thermocouple probes. The readings in the table below are called out in millivolts after the unit number which is nine, so that a number x (e.g., on the map is actually 9.x (e.g., 9.55) milli volts (e.g., 9.55 99.7 C).
TABLE I MV 9c r 1,050? c 840 c)! Curves l and 2 are outputs from the control thermocouples embedded in the heater elements at the rpective zones shown in the drawing. (Alternatively, control thermocouple may be located between heater plate and process tube.) Curves 3 and 4 are outputs from thermocouples resting directly over the center of two wafer positions on the process boat, as for the static profile above. Curve 3 is taken in zone 1 and curve 4 taken in zone 2. As can be seen, in both zones, the heater elements and wafer position tracked substantially identically.
The following illustrates the application of the furnaces of this invention to the formation of gate oxides for FETs having source and drain regions previously formed therein by earlier operations. For this operation two furnaces of this invention are employed; the first utilizing a reactor tube 2A of FIG. 2, and the second utilizing the reactor tube 2 described in reference to FIG. 1. 1
In operation silicon substrates 13 with gate openings (defined in a base silicon oxide layer by photolithographic techniques) are placed on boat 12 and inserted into the first" furnace heated to l,000 C for a process cycle time of about 72 minutes with dry oxygen flowing through the reactor tube 2A at a rate of 1,300 cc./mm. In this step, a dry gate silicon oxide is grown on the 5 66 minutes are feasible with temperature wafer 13, after which the boat 12 is transferred immediately to a second" furnace, at a temperature of 840 C where for a 2-5 minute stabilization period 1182 cc/min of nitrogen and 1 l8 cc/min of oxygen is passed through the reactor tube 2 (e.g., FIG. 1) by injection through feed nozzle 6 in conjunction with a back flow of 945 cc/min of nitrogen injection through back-flow ports 18.
At the end of the 2 to 5 minute stabilization period, a dopant gas is then also added into reactor tube 2 (via inlet nozzle 6) which was comprised of cc/min of nitrogen containing 440 ppm of POCl for 5 to 7 minutes to deposit a phosphosilicate glass (PSG) on the substrate at the 840 C temperature. At the end of the PSG deposition the oxygen and the POCI doped nitrogen gasses were valve-off, and the furnace temperature was ramped to l,050 C over a 15 minute anneal period to stabilize surface charges and distribute the phosphorous impurities through the silicon oxide coating on the substrate. At the end of the anneal cycle, the furnace was ramped down to 840 C. Meanwhile, the boat was withdrawn for cooling of wafers in the ambient. The resultant SiO and PSG combined thickness wassubstantially 675 Angstroms with a PSG thickness of l 10 Angstroms. 1
It is noted that although the cool-down of the furnace was obtained solely by control of energy input and heat loss of the furnace, such cool-down may be assisted by blowing of cooling gasses through the furnace by injection of such gasses between the reactor tube (externally) and the heater plate means. 1
While the invention has been particularly shown and described with reference to particular embodiments thereof, it will be understood by those skilled in the art that the foregoing and other changes in form and details may be made therein without departing from the spirit and scope of the invention.
What is claimed is:
l. A furnace for processing semiconductor wafers comprising:
A. a rectangular quartz tube having opposed top and bottom horizontally planar walls transparent to radiant heat with a. the internal height between said walls being in the range of about 3/16 to about 1 inch,
b. the internal width between the side walls of said tube being in the range of about 1 Va to about inches, with B. a support plate opaque to radiant heat slidably insertable and removeable into and from said tube in parallel relationship to said top and bottom walls and having a vertical thickness in the range from about one sixteenth to about one fourth inches for supporting said wafers planarly equidistant from said top and bottom with a. the top surface of said wafers disposed in parallel relationship to said top and bottom walls and at a distance in the range of about one eighth from said top wall to about three fourth inch;
b. the ratio of said distance to said width being in the range of about 1:1 to about 1:25;
C. gas inl et means for injecting a processing gas in said tube;
D. gas diffuser means for constraining an injected gas in even flow through and across said tube having at least one said wafer disposed therein on said support;
E. first and second planar radiant heat diffuser means juxtaposed externally in parallel relationship on respective ones of said top and bottom walls;
F. means for heating said first and second diffuser means to radiant heat;
G. an insulating mass of about 15 to about 34 pounds surrounding said tube and said elements E and F with said mass having a thermal conductivity of in the range of about 0.08 to about 0.1 l Btu/Hr-Ft- F. I 2. The furnace of claim 1 wherein said mass in densified fibrous alumina silicate having a packing density in the range of about 13 to about l7 lbs/ft and said thermal conductivity in the range of about 0.08 to about 3. The furnace of claim 1 wherein said support plate is quartz.
4. The furnace of claim 2 wherein said support plate is quartz.
5. The furnace of claim 1 including means disposed externally of said tube for forced cooling of said furnace.
6. The furnace of claim 2 including means disposed externally of said tube for forced cooling of said furnace.
7. The furnace of claim 3 including means disposed externally of said tube for forced cooling of said furnace.
8. The furnace of claim 4 including means disposed externally of said tube for forced cooling of said furnace.
Claims (8)
1. A furnace for processing semiconductor wafers comprising: A. a rectangular quartz tube having opposed top and bottom horizontally planar walls transparent to radiant heat with a. the internal height between said walls being in the range of about 3/16 to about 1 inch, b. the internal width between the side walls of said tube being in the range of about 1 1/3 to about 20 inches, with B. a support plate opaque to radiant heat slidably insertable and removeable into and from said tube in parallel relationship to said top and bottom walls and having a vertical thickness in the range from about one sixteenth to about one fourth inches for supporting said wafers planarly equidistant from said top and bottom with a. the top surface of said wafers disposed in parallel relationship to said top and bottom walls and at a distance in the range of about one eighth from said top wall to about three fourth inch; b. the ratio of said distance to said width being in the range of about 1:1 to about 1:25; c. gas inlet means for injecting a processing gas in said tube; D. gas diffuser means for constraining an injected gas in even flow through and across said tube having at least one said wafer disposed therein on said support; E. first and second planar radiant heat diffuser means juxtaposed externally in parallel relationship on respective ones of said top and bottom walls; F. means for heating said first and second diffuser means to radiant heat; G. an insulating mass of about 15 to about 34 pounds surrounding said tube and said elements E and F with said mass having a thermal conductivity of in the range of about 0.08 to about 0.11 Btu/Hr-Ft-* F.
2. The furnace of claim 1 wherein said mass in densified fibrous alumina silicate having a packing density in the range of about 13 to about 17 lbs/ft3 and said thermal conductivity in the range of about 0.08 to about 0.11 Btu/Hr-Ft-* F.
3. The furnace of claim 1 wherein said support plate is quartz.
4. The furnace of claim 2 wherein said support plate is quartz.
5. The furnace of claim 1 including means disposed externally of said tube for forced cooling of said furnace.
6. The furnace of claim 2 including means disposed externally of said tube for forced cooling of said furnace.
7. The furnace of claim 3 including means disposed externally of said tube for forced cooling of said furnace.
8. The furnace of claim 4 including means disposed externally of said tube for forced cooling of said furnace.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US00375190A US3842794A (en) | 1973-06-29 | 1973-06-29 | Apparatus for high temperature semiconductor processing |
FR7415812A FR2235487B1 (en) | 1973-06-29 | 1974-04-29 | |
JP49063003A JPS5024074A (en) | 1973-06-29 | 1974-06-05 | |
GB2640574A GB1420550A (en) | 1973-06-29 | 1974-06-14 | Semiconductor processing furnaces |
DE2430432A DE2430432A1 (en) | 1973-06-29 | 1974-06-25 | TUBE FURNACE WITH A GAS FLOWRED REACTION TUBE |
US05/486,555 US3943015A (en) | 1973-06-29 | 1974-07-08 | Method for high temperature semiconductor processing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US00375190A US3842794A (en) | 1973-06-29 | 1973-06-29 | Apparatus for high temperature semiconductor processing |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US05/486,555 Division US3943015A (en) | 1973-06-29 | 1974-07-08 | Method for high temperature semiconductor processing |
Publications (1)
Publication Number | Publication Date |
---|---|
US3842794A true US3842794A (en) | 1974-10-22 |
Family
ID=23479866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US00375190A Expired - Lifetime US3842794A (en) | 1973-06-29 | 1973-06-29 | Apparatus for high temperature semiconductor processing |
Country Status (5)
Country | Link |
---|---|
US (1) | US3842794A (en) |
JP (1) | JPS5024074A (en) |
DE (1) | DE2430432A1 (en) |
FR (1) | FR2235487B1 (en) |
GB (1) | GB1420550A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4239560A (en) * | 1979-05-21 | 1980-12-16 | General Electric Company | Open tube aluminum oxide disc diffusion |
FR2526224A1 (en) * | 1982-05-03 | 1983-11-04 | Gca Corp | APPARATUS FOR THERMALLY TREATING SEMICONDUCTOR PELLETS |
US4492852A (en) * | 1983-02-11 | 1985-01-08 | At&T Bell Laboratories | Growth substrate heating arrangement for UHV silicon MBE |
EP0134716A1 (en) * | 1983-08-29 | 1985-03-20 | Varian Associates, Inc. | Process for high temperature drive-in diffusion of dopants into semiconductor wafers |
US4554437A (en) * | 1984-05-17 | 1985-11-19 | Pet Incorporated | Tunnel oven |
US5059770A (en) * | 1989-09-19 | 1991-10-22 | Watkins-Johnson Company | Multi-zone planar heater assembly and method of operation |
US5892203A (en) * | 1996-05-29 | 1999-04-06 | International Business Machines Corporation | Apparatus for making laminated integrated circuit devices |
US20050133159A1 (en) * | 2001-04-12 | 2005-06-23 | Johnsgard Kristian E. | Systems and methods for epitaxially depositing films on a semiconductor substrate |
US20120236067A1 (en) * | 2011-03-15 | 2012-09-20 | Ricoh Company, Ltd. | Droplet-discharging-head manufacturing apparatus, droplet-discharging-head manufacutring method, droplet discharging head, droplet discharging device, and printing apparatus |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2492960A1 (en) * | 1980-10-23 | 1982-04-30 | Efcis | Refractory lance for furnaces - carrying lug for driving sample carriages and bulge to prevent air ingress |
JPS57176717A (en) * | 1981-04-24 | 1982-10-30 | Hitachi Ltd | Vapor phase growing device |
FR2522534A1 (en) * | 1982-03-05 | 1983-09-09 | Atelier Electro Thermie Const | Cooling process for use in substrate treatments - giving rapid cooling at controlled rate |
JPS58130520A (en) * | 1982-12-24 | 1983-08-04 | Hitachi Ltd | Operating part for heat treating furnace |
DE19547601A1 (en) * | 1995-12-20 | 1997-06-26 | Sel Alcatel Ag | Temperature gradient sintering furnace |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE760041A (en) * | 1970-01-02 | 1971-05-17 | Ibm | GAS MASS TRANSFER METHOD AND APPARATUS |
FR2114105A5 (en) * | 1970-11-16 | 1972-06-30 | Applied Materials Techno | Epitaxial radiation heated reactor - including a quartz reaction chamber |
US3737282A (en) * | 1971-10-01 | 1973-06-05 | Ibm | Method for reducing crystallographic defects in semiconductor structures |
-
1973
- 1973-06-29 US US00375190A patent/US3842794A/en not_active Expired - Lifetime
-
1974
- 1974-04-29 FR FR7415812A patent/FR2235487B1/fr not_active Expired
- 1974-06-05 JP JP49063003A patent/JPS5024074A/ja active Pending
- 1974-06-14 GB GB2640574A patent/GB1420550A/en not_active Expired
- 1974-06-25 DE DE2430432A patent/DE2430432A1/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4239560A (en) * | 1979-05-21 | 1980-12-16 | General Electric Company | Open tube aluminum oxide disc diffusion |
FR2526224A1 (en) * | 1982-05-03 | 1983-11-04 | Gca Corp | APPARATUS FOR THERMALLY TREATING SEMICONDUCTOR PELLETS |
US4492852A (en) * | 1983-02-11 | 1985-01-08 | At&T Bell Laboratories | Growth substrate heating arrangement for UHV silicon MBE |
EP0134716A1 (en) * | 1983-08-29 | 1985-03-20 | Varian Associates, Inc. | Process for high temperature drive-in diffusion of dopants into semiconductor wafers |
US4554437A (en) * | 1984-05-17 | 1985-11-19 | Pet Incorporated | Tunnel oven |
US5059770A (en) * | 1989-09-19 | 1991-10-22 | Watkins-Johnson Company | Multi-zone planar heater assembly and method of operation |
US5892203A (en) * | 1996-05-29 | 1999-04-06 | International Business Machines Corporation | Apparatus for making laminated integrated circuit devices |
US20050133159A1 (en) * | 2001-04-12 | 2005-06-23 | Johnsgard Kristian E. | Systems and methods for epitaxially depositing films on a semiconductor substrate |
US20120236067A1 (en) * | 2011-03-15 | 2012-09-20 | Ricoh Company, Ltd. | Droplet-discharging-head manufacturing apparatus, droplet-discharging-head manufacutring method, droplet discharging head, droplet discharging device, and printing apparatus |
US8684493B2 (en) * | 2011-03-15 | 2014-04-01 | Ricoh Company, Ltd. | Droplet-discharging-head manufacturing apparatus, droplet-discharging-head manufacturing method, droplet discharging head, droplet discharging device, and printing apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPS5024074A (en) | 1975-03-14 |
FR2235487B1 (en) | 1976-06-25 |
GB1420550A (en) | 1976-01-07 |
FR2235487A1 (en) | 1975-01-24 |
DE2430432A1 (en) | 1975-01-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3842794A (en) | Apparatus for high temperature semiconductor processing | |
US5001327A (en) | Apparatus and method for performing heat treatment on semiconductor wafers | |
US6342691B1 (en) | Apparatus and method for thermal processing of semiconductor substrates | |
US3805736A (en) | Apparatus for diffusion limited mass transport | |
US4694779A (en) | Reactor apparatus for semiconductor wafer processing | |
KR960035866A (en) | Method for manufacturing semiconductor device and apparatus for manufacturing semiconductor device | |
JPH0758696B2 (en) | Semiconductor wafer heating device | |
US3943015A (en) | Method for high temperature semiconductor processing | |
JP2002530847A (en) | Heat treatment apparatus, system and method for treating semiconductor substrate | |
JPH088220B2 (en) | Semiconductor wafer heat treatment apparatus and heat treatment method | |
JPH0744159B2 (en) | Semiconductor wafer heat treatment apparatus and heat treatment method | |
US3673983A (en) | High capacity deposition reactor | |
JPH02216820A (en) | Heat-treatment device of semiconductor wafer | |
JP2000012478A (en) | Heat treatment system for substrate | |
KR920004911B1 (en) | Thermally processing apparatus and method of semiconductor wafer | |
US5279671A (en) | Thermal vapor deposition apparatus | |
JPH06310454A (en) | Hot-wall type heat treatment device | |
US20020043526A1 (en) | System and method for efficiently implementing a thermal processing chamber | |
KR200365533Y1 (en) | Furnace of low temperature chemical vaper deposition equipment | |
JPH0468522A (en) | Vertical heat treatment device | |
JP2670513B2 (en) | Heating equipment | |
JPH10214772A (en) | Substrate heat-treating device | |
JPH09306860A (en) | Heat treating furnace | |
TW202343622A (en) | Gas supply system, substrate processing apparatus and method of manufacturing semiconductor device | |
JPS5824437Y2 (en) | Semiconductor heat treatment container |