US3619288A - Process for precipitating a high melting metal contact layer at low temperatures - Google Patents

Process for precipitating a high melting metal contact layer at low temperatures Download PDF

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Publication number
US3619288A
US3619288A US886946A US3619288DA US3619288A US 3619288 A US3619288 A US 3619288A US 886946 A US886946 A US 886946A US 3619288D A US3619288D A US 3619288DA US 3619288 A US3619288 A US 3619288A
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United States
Prior art keywords
trifluorophosphine
thermal dissociation
carrier body
carrier
precipitating
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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US886946A
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English (en)
Inventor
Erhard Sirtl
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Siemens AG
Siemens Corp
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Siemens Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material

Definitions

  • reaction of a fluoride brings about difficulties, caused by hydrofluoric acid formation during dissociation.
  • Reduction of the chloride requires relatively high temperatures, for a substantial precipitation of the metal.
  • Oxygen and carbon are formed during the dissociation of carbonyl become installed into the metal lattice or interfere with a homogeneous precipitation in the form of a foreign phase.
  • FIGURE of the drawing schematically shows a device suitable for carrying out the invention.
  • the hydrogen which acts as a carrier gas thus becomes charged with the tungsten-trifluoride-phosphine (W(PF 12, contained in the vaporization vessel 11 maintained by a temperature bath 13, at 80 C.
  • W(PF 12 contained in the vaporization vessel 11 maintained by a temperature bath 13, at 80 C.
  • the compound, mixed with the carrier gas is then passed via a frit or screening plate 14, into the reaction chamber 1 and is dissociated at the gas-etched silicon carrier body 2 which is being maintained at 450 C. to precipitate tungsten. After about 30 minutes, an approximately 1000 A thick tungsten layer of high uniformity has formed on the silicon crystal wafer and is in tight contact with the silicon surface.
  • Valves 18 and 19 assure an exact adjustment of the flow rate of the carrier gas current. The residual gases and the volatile reaction products, leave the reaction chamber at the arrow 20.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
US886946A 1969-01-02 1969-12-22 Process for precipitating a high melting metal contact layer at low temperatures Expired - Lifetime US3619288A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691900119 DE1900119B2 (de) 1969-01-02 1969-01-02 Verfahren zum abscheiden hochschmelzender kontaktmetallschichten bei niedrigen temperaturen

Publications (1)

Publication Number Publication Date
US3619288A true US3619288A (en) 1971-11-09

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ID=5721667

Family Applications (1)

Application Number Title Priority Date Filing Date
US886946A Expired - Lifetime US3619288A (en) 1969-01-02 1969-12-22 Process for precipitating a high melting metal contact layer at low temperatures

Country Status (9)

Country Link
US (1) US3619288A (enrdf_load_stackoverflow)
JP (1) JPS4822886B1 (enrdf_load_stackoverflow)
AT (1) AT293813B (enrdf_load_stackoverflow)
CH (1) CH550862A (enrdf_load_stackoverflow)
DE (1) DE1900119B2 (enrdf_load_stackoverflow)
FR (1) FR2027649A1 (enrdf_load_stackoverflow)
GB (1) GB1251631A (enrdf_load_stackoverflow)
NL (1) NL6915312A (enrdf_load_stackoverflow)
SE (1) SE341864B (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4478890A (en) * 1983-09-12 1984-10-23 The United States Of America As Represented By The Secretary Of The Navy Low temperature deposition of nickel films
US4597167A (en) * 1983-08-30 1986-07-01 Kabushiki Kaisha Toshiba Method of forming a metal film on a selectively diffused layer
US4619840A (en) * 1983-05-23 1986-10-28 Thermco Systems, Inc. Process and apparatus for low pressure chemical vapor deposition of refractory metal
US4668528A (en) * 1986-04-09 1987-05-26 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US4748045A (en) * 1986-04-09 1988-05-31 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US4782034A (en) * 1987-06-04 1988-11-01 American Telephone And Telegraph Company, At&T Bell Laboratories Semi-insulating group III-V based compositions doped using bis arene titanium sources
US4817557A (en) * 1983-05-23 1989-04-04 Anicon, Inc. Process and apparatus for low pressure chemical vapor deposition of refractory metal
US4830982A (en) * 1986-12-16 1989-05-16 American Telephone And Telegraph Company Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
US4868005A (en) * 1986-04-09 1989-09-19 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US5073645A (en) * 1988-08-18 1991-12-17 Siemens Aktiengesellschaft Cvd-compatible tungsten halogen phosphine complex compounds and methods for the production thereof
US5320978A (en) * 1993-07-30 1994-06-14 The United States Of America As Represented By The Secretary Of The Navy Selective area platinum film deposition
US6087704A (en) * 1997-09-30 2000-07-11 National Science Council Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer
FR3108920A1 (fr) 2020-04-07 2021-10-08 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de depot d’un film metallique de tungstene ou de molybdene par ald

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4250210A (en) 1977-12-27 1981-02-10 The International Nickel Co., Inc. Chemical vapor deposition
DE2929630C2 (de) * 1979-07-21 1983-12-15 Dornier System Gmbh, 7990 Friedrichshafen Verfahren zur Herstellung von Silberpulver
JPS6164344U (enrdf_load_stackoverflow) * 1984-09-29 1986-05-01
JPS6265754A (ja) * 1985-09-18 1987-03-25 富士ゼロツクスオフイスサプライ株式会社 細断機
DE3762052D1 (de) * 1986-03-31 1990-05-03 Unisys Corp Abscheidung einer vanadin-unterlage fuer magnetische filme.
GB8620273D0 (en) * 1986-08-20 1986-10-01 Gen Electric Co Plc Deposition of thin films
EP0338206A1 (de) * 1988-03-24 1989-10-25 Siemens Aktiengesellschaft Verfahren zum konformen Abscheiden von Wolfram auf Halbleitersubstrate bei der Herstellung von höchstintegrierten Schaltungen
EP0349696A1 (en) * 1988-07-08 1990-01-10 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of depositing metal on an aluminium substrate
DE4023883A1 (de) * 1990-07-27 1992-01-30 Kali Chemie Ag Verfahren zur abscheidung von uebergangsmetall enthaltenden schichten
JP4860176B2 (ja) * 2005-05-02 2012-01-25 株式会社トリケミカル研究所 Ｎｉ（ＰＦ３）４の製造方法
RU2406771C2 (ru) * 2009-02-12 2010-12-20 ООО "Институт Гипроникель" Способ синтеза тетракис-(трифторфосфина) палладия

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Zeitschrift fur angewandte Chemie Vol. 79, No. 1 pages 27 43, 1967 *

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4817557A (en) * 1983-05-23 1989-04-04 Anicon, Inc. Process and apparatus for low pressure chemical vapor deposition of refractory metal
US4619840A (en) * 1983-05-23 1986-10-28 Thermco Systems, Inc. Process and apparatus for low pressure chemical vapor deposition of refractory metal
US4597167A (en) * 1983-08-30 1986-07-01 Kabushiki Kaisha Toshiba Method of forming a metal film on a selectively diffused layer
US4478890A (en) * 1983-09-12 1984-10-23 The United States Of America As Represented By The Secretary Of The Navy Low temperature deposition of nickel films
US4668528A (en) * 1986-04-09 1987-05-26 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US4748045A (en) * 1986-04-09 1988-05-31 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US4868005A (en) * 1986-04-09 1989-09-19 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US4830982A (en) * 1986-12-16 1989-05-16 American Telephone And Telegraph Company Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
US4782034A (en) * 1987-06-04 1988-11-01 American Telephone And Telegraph Company, At&T Bell Laboratories Semi-insulating group III-V based compositions doped using bis arene titanium sources
US5073645A (en) * 1988-08-18 1991-12-17 Siemens Aktiengesellschaft Cvd-compatible tungsten halogen phosphine complex compounds and methods for the production thereof
US5320978A (en) * 1993-07-30 1994-06-14 The United States Of America As Represented By The Secretary Of The Navy Selective area platinum film deposition
US6087704A (en) * 1997-09-30 2000-07-11 National Science Council Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer
US6197667B1 (en) 1997-09-30 2001-03-06 National Science Council Structure and method for manufacturing Group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer
FR3108920A1 (fr) 2020-04-07 2021-10-08 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de depot d’un film metallique de tungstene ou de molybdene par ald
EP3892755A1 (fr) 2020-04-07 2021-10-13 Commissariat à l'énergie atomique et aux énergies alternatives Procede de depot d'un film metallique de molybdene par ald

Also Published As

Publication number Publication date
AT293813B (de) 1971-10-25
GB1251631A (enrdf_load_stackoverflow) 1971-10-27
DE1900119A1 (de) 1970-08-13
SE341864B (enrdf_load_stackoverflow) 1972-01-17
NL6915312A (enrdf_load_stackoverflow) 1970-07-06
CH550862A (de) 1974-06-28
DE1900119B2 (de) 1977-06-30
FR2027649A1 (enrdf_load_stackoverflow) 1970-10-02
JPS4822886B1 (enrdf_load_stackoverflow) 1973-07-10

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