NL6915312A - - Google Patents

Info

Publication number
NL6915312A
NL6915312A NL6915312A NL6915312A NL6915312A NL 6915312 A NL6915312 A NL 6915312A NL 6915312 A NL6915312 A NL 6915312A NL 6915312 A NL6915312 A NL 6915312A NL 6915312 A NL6915312 A NL 6915312A
Authority
NL
Netherlands
Application number
NL6915312A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6915312A publication Critical patent/NL6915312A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
NL6915312A 1969-01-02 1969-10-09 NL6915312A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691900119 DE1900119B2 (de) 1969-01-02 1969-01-02 Verfahren zum abscheiden hochschmelzender kontaktmetallschichten bei niedrigen temperaturen

Publications (1)

Publication Number Publication Date
NL6915312A true NL6915312A (enrdf_load_stackoverflow) 1970-07-06

Family

ID=5721667

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6915312A NL6915312A (enrdf_load_stackoverflow) 1969-01-02 1969-10-09

Country Status (9)

Country Link
US (1) US3619288A (enrdf_load_stackoverflow)
JP (1) JPS4822886B1 (enrdf_load_stackoverflow)
AT (1) AT293813B (enrdf_load_stackoverflow)
CH (1) CH550862A (enrdf_load_stackoverflow)
DE (1) DE1900119B2 (enrdf_load_stackoverflow)
FR (1) FR2027649A1 (enrdf_load_stackoverflow)
GB (1) GB1251631A (enrdf_load_stackoverflow)
NL (1) NL6915312A (enrdf_load_stackoverflow)
SE (1) SE341864B (enrdf_load_stackoverflow)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4250210A (en) 1977-12-27 1981-02-10 The International Nickel Co., Inc. Chemical vapor deposition
DE2929630C2 (de) * 1979-07-21 1983-12-15 Dornier System Gmbh, 7990 Friedrichshafen Verfahren zur Herstellung von Silberpulver
US4817557A (en) * 1983-05-23 1989-04-04 Anicon, Inc. Process and apparatus for low pressure chemical vapor deposition of refractory metal
US4619840A (en) * 1983-05-23 1986-10-28 Thermco Systems, Inc. Process and apparatus for low pressure chemical vapor deposition of refractory metal
JPS6050920A (ja) * 1983-08-30 1985-03-22 Toshiba Corp 半導体装置の製造方法
US4478890A (en) * 1983-09-12 1984-10-23 The United States Of America As Represented By The Secretary Of The Navy Low temperature deposition of nickel films
JPS6164344U (enrdf_load_stackoverflow) * 1984-09-29 1986-05-01
JPS6265754A (ja) * 1985-09-18 1987-03-25 富士ゼロツクスオフイスサプライ株式会社 細断機
DE3762052D1 (de) * 1986-03-31 1990-05-03 Unisys Corp Abscheidung einer vanadin-unterlage fuer magnetische filme.
US4868005A (en) * 1986-04-09 1989-09-19 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US4748045A (en) * 1986-04-09 1988-05-31 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US4668528A (en) * 1986-04-09 1987-05-26 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
GB8620273D0 (en) * 1986-08-20 1986-10-01 Gen Electric Co Plc Deposition of thin films
US4830982A (en) * 1986-12-16 1989-05-16 American Telephone And Telegraph Company Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
US4782034A (en) * 1987-06-04 1988-11-01 American Telephone And Telegraph Company, At&T Bell Laboratories Semi-insulating group III-V based compositions doped using bis arene titanium sources
EP0338206A1 (de) * 1988-03-24 1989-10-25 Siemens Aktiengesellschaft Verfahren zum konformen Abscheiden von Wolfram auf Halbleitersubstrate bei der Herstellung von höchstintegrierten Schaltungen
EP0349696A1 (en) * 1988-07-08 1990-01-10 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of depositing metal on an aluminium substrate
EP0355296A3 (de) * 1988-08-18 1991-01-02 Siemens Aktiengesellschaft CVD-taugliche Wolframhalogenphosphankomplexverbindungen sowie Verfahren zu ihrer Herstellung
DE4023883A1 (de) * 1990-07-27 1992-01-30 Kali Chemie Ag Verfahren zur abscheidung von uebergangsmetall enthaltenden schichten
US5320978A (en) * 1993-07-30 1994-06-14 The United States Of America As Represented By The Secretary Of The Navy Selective area platinum film deposition
US6087704A (en) 1997-09-30 2000-07-11 National Science Council Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer
JP4860176B2 (ja) * 2005-05-02 2012-01-25 株式会社トリケミカル研究所 Ｎｉ（ＰＦ３）４の製造方法
RU2406771C2 (ru) * 2009-02-12 2010-12-20 ООО "Институт Гипроникель" Способ синтеза тетракис-(трифторфосфина) палладия
FR3108920B1 (fr) 2020-04-07 2022-07-22 Commissariat Energie Atomique Procede de depot d’un film metallique de tungstene ou de molybdene par ald

Also Published As

Publication number Publication date
US3619288A (en) 1971-11-09
AT293813B (de) 1971-10-25
GB1251631A (enrdf_load_stackoverflow) 1971-10-27
DE1900119A1 (de) 1970-08-13
SE341864B (enrdf_load_stackoverflow) 1972-01-17
CH550862A (de) 1974-06-28
DE1900119B2 (de) 1977-06-30
FR2027649A1 (enrdf_load_stackoverflow) 1970-10-02
JPS4822886B1 (enrdf_load_stackoverflow) 1973-07-10

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