JPS4822886B1 - - Google Patents

Info

Publication number
JPS4822886B1
JPS4822886B1 JP44104498A JP10449869A JPS4822886B1 JP S4822886 B1 JPS4822886 B1 JP S4822886B1 JP 44104498 A JP44104498 A JP 44104498A JP 10449869 A JP10449869 A JP 10449869A JP S4822886 B1 JPS4822886 B1 JP S4822886B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP44104498A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4822886B1 publication Critical patent/JPS4822886B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP44104498A 1969-01-02 1969-12-26 Pending JPS4822886B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691900119 DE1900119B2 (de) 1969-01-02 1969-01-02 Verfahren zum abscheiden hochschmelzender kontaktmetallschichten bei niedrigen temperaturen

Publications (1)

Publication Number Publication Date
JPS4822886B1 true JPS4822886B1 (enrdf_load_stackoverflow) 1973-07-10

Family

ID=5721667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP44104498A Pending JPS4822886B1 (enrdf_load_stackoverflow) 1969-01-02 1969-12-26

Country Status (9)

Country Link
US (1) US3619288A (enrdf_load_stackoverflow)
JP (1) JPS4822886B1 (enrdf_load_stackoverflow)
AT (1) AT293813B (enrdf_load_stackoverflow)
CH (1) CH550862A (enrdf_load_stackoverflow)
DE (1) DE1900119B2 (enrdf_load_stackoverflow)
FR (1) FR2027649A1 (enrdf_load_stackoverflow)
GB (1) GB1251631A (enrdf_load_stackoverflow)
NL (1) NL6915312A (enrdf_load_stackoverflow)
SE (1) SE341864B (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6164344U (enrdf_load_stackoverflow) * 1984-09-29 1986-05-01
JPS6265754A (ja) * 1985-09-18 1987-03-25 富士ゼロツクスオフイスサプライ株式会社 細断機
JP2006306682A (ja) * 2005-05-02 2006-11-09 Tri Chemical Laboratory Inc Ｎｉ（ＰＦ３）４の製造方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4250210A (en) 1977-12-27 1981-02-10 The International Nickel Co., Inc. Chemical vapor deposition
DE2929630C2 (de) * 1979-07-21 1983-12-15 Dornier System Gmbh, 7990 Friedrichshafen Verfahren zur Herstellung von Silberpulver
US4817557A (en) * 1983-05-23 1989-04-04 Anicon, Inc. Process and apparatus for low pressure chemical vapor deposition of refractory metal
US4619840A (en) * 1983-05-23 1986-10-28 Thermco Systems, Inc. Process and apparatus for low pressure chemical vapor deposition of refractory metal
JPS6050920A (ja) * 1983-08-30 1985-03-22 Toshiba Corp 半導体装置の製造方法
US4478890A (en) * 1983-09-12 1984-10-23 The United States Of America As Represented By The Secretary Of The Navy Low temperature deposition of nickel films
DE3762052D1 (de) * 1986-03-31 1990-05-03 Unisys Corp Abscheidung einer vanadin-unterlage fuer magnetische filme.
US4868005A (en) * 1986-04-09 1989-09-19 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US4748045A (en) * 1986-04-09 1988-05-31 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US4668528A (en) * 1986-04-09 1987-05-26 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
GB8620273D0 (en) * 1986-08-20 1986-10-01 Gen Electric Co Plc Deposition of thin films
US4830982A (en) * 1986-12-16 1989-05-16 American Telephone And Telegraph Company Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
US4782034A (en) * 1987-06-04 1988-11-01 American Telephone And Telegraph Company, At&T Bell Laboratories Semi-insulating group III-V based compositions doped using bis arene titanium sources
EP0338206A1 (de) * 1988-03-24 1989-10-25 Siemens Aktiengesellschaft Verfahren zum konformen Abscheiden von Wolfram auf Halbleitersubstrate bei der Herstellung von höchstintegrierten Schaltungen
EP0349696A1 (en) * 1988-07-08 1990-01-10 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of depositing metal on an aluminium substrate
EP0355296A3 (de) * 1988-08-18 1991-01-02 Siemens Aktiengesellschaft CVD-taugliche Wolframhalogenphosphankomplexverbindungen sowie Verfahren zu ihrer Herstellung
DE4023883A1 (de) * 1990-07-27 1992-01-30 Kali Chemie Ag Verfahren zur abscheidung von uebergangsmetall enthaltenden schichten
US5320978A (en) * 1993-07-30 1994-06-14 The United States Of America As Represented By The Secretary Of The Navy Selective area platinum film deposition
US6087704A (en) 1997-09-30 2000-07-11 National Science Council Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer
RU2406771C2 (ru) * 2009-02-12 2010-12-20 ООО "Институт Гипроникель" Способ синтеза тетракис-(трифторфосфина) палладия
FR3108920B1 (fr) 2020-04-07 2022-07-22 Commissariat Energie Atomique Procede de depot d’un film metallique de tungstene ou de molybdene par ald

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6164344U (enrdf_load_stackoverflow) * 1984-09-29 1986-05-01
JPS6265754A (ja) * 1985-09-18 1987-03-25 富士ゼロツクスオフイスサプライ株式会社 細断機
JP2006306682A (ja) * 2005-05-02 2006-11-09 Tri Chemical Laboratory Inc Ｎｉ（ＰＦ３）４の製造方法

Also Published As

Publication number Publication date
US3619288A (en) 1971-11-09
AT293813B (de) 1971-10-25
GB1251631A (enrdf_load_stackoverflow) 1971-10-27
DE1900119A1 (de) 1970-08-13
SE341864B (enrdf_load_stackoverflow) 1972-01-17
NL6915312A (enrdf_load_stackoverflow) 1970-07-06
CH550862A (de) 1974-06-28
DE1900119B2 (de) 1977-06-30
FR2027649A1 (enrdf_load_stackoverflow) 1970-10-02

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