US3172734A - warren - Google Patents

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Publication number
US3172734A
US3172734A US3172734DA US3172734A US 3172734 A US3172734 A US 3172734A US 3172734D A US3172734D A US 3172734DA US 3172734 A US3172734 A US 3172734A
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United States
Prior art keywords
crucible
coil
silicon
zone
hollow
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Priority claimed from GB7540/57A external-priority patent/GB827676A/en
Priority claimed from GB3627257A external-priority patent/GB871156A/en
Priority claimed from GB829558A external-priority patent/GB871157A/en
Priority claimed from GB949458A external-priority patent/GB875592A/en
Priority claimed from GB18772/58A external-priority patent/GB899287A/en
Application granted granted Critical
Publication of US3172734A publication Critical patent/US3172734A/en
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/32—Arrangements for simultaneous levitation and heating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J6/00—Heat treatments such as Calcining; Fusing ; Pyrolysis
    • B01J6/005—Fusing
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C01B35/023—Boron
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00—Obtaining refractory metals
    • C22B34/10—Obtaining titanium, zirconium or hafnium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B4/00—Electrothermal treatment of ores or metallurgical products for obtaining metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B60/00—Obtaining metals of atomic number 87 or higher, i.e. radioactive metals
    • C22B60/02—Obtaining thorium, uranium, or other actinides
    • C22B60/0204—Obtaining thorium, uranium, or other actinides obtaining uranium
    • C22B60/0286—Obtaining thorium, uranium, or other actinides obtaining uranium refining, melting, remelting, working up uranium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
    • C22B9/02—Refining by liquating, filtering, centrifuging, distilling, or supersonic wave action including acoustic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/14—Crucibles or vessels
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/18—Heating of the molten zone the heating element being in contact with, or immersed in, the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B3/00—Hearth-type furnaces, e.g. of reverberatory type; Electric arc furnaces ; Tank furnaces
    • F27B3/08—Hearth-type furnaces, e.g. of reverberatory type; Electric arc furnaces ; Tank furnaces heated electrically, with or without any other source of heat
    • F27B3/085—Arc furnaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/20—Recycling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/25—Process efficiency
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]

Definitions

  • a molten zone may be caused to traverse the length of the crucible.
  • silicon or germanium in the form of granules or powder may be consolidated into the form of a rod.
  • a rod of silicon or germanium may be refined in a similar way care being taken to observe the limitations in the width of the zone for impurities to be driven to the ends of the rod.
  • the invention has been found to be highly successful in the treatment of silicon. It has been found that, although silicon very readily absorbs impurities when in the molten condition, no contamination of silicon occurs in the practice of the present invention.
  • the metals copper, silver and gold are chosen for the material of the crucible because each of these metals has high electrical and thermal conductivity and does not react with the material being treated; silver is preferred because its electrical and also thermal conductivities are the highest of the three and because it can be most readily polished to reflect heat optically into the melt.
  • FIG. 1 is a side view of one embodiment of apparatus according to the invention.
  • FIG. 2 is a cross sectional view on the line 11 of FIG. 1, and in conjunction with the accompanying drawings in which:
  • FIG. 4 is a cross sectional view of the line AA of FIG. 3.
  • FIG. 5 is a diagrammatic view illustrating one manner of operation of the apparatus.
  • the crucible should be so located with respect to the heating coil that the silicon lies below the centre of the coil and the reaction between the electromagnetic field of coil A and the field clue to currents induced in the wall of the crucible immediately adjacent to the silicon with the field induced in the molten zone of silicon lifts that zone upwards in the drawing.
  • the crucible 1 It is convenient to place the crucible 1 within a tube 5 made of silica in order that the material in the crucible can be surrounded by a protective atmosphere, the induction heater 4 being exterior to the tube 5. The crucible 1 is then pushed or pulled, by means described later, so that the full length of the crucible 1 passes the coil 4.
  • a protective gas such as argon is circulated through the silca tube 5 by flexible hose 18.
  • the platform 10 carrying the crucible 1 within the protective gas atmosphere may be traversed past a stationary heating coil 4 to carry out the process of zone refining at any speed found necessary or desirable and by reversing the direction of rotation of the motor 16 passes of the silicon 7 may be given in alternate directions.
  • Apparatus for processing fusible material comprising an open elongated hollow walled vessel of a substantially pure metal of high electrical and thermal conductivity which is substantially non-reactive with the material being treated, means for circulating cooling fluid through the hollow walls of said crucible, a heating coil surrounding a portion of said vessel, means for passing through said coil alternating current of such value as to melt a limited zone of said fusible material and means for causing relative movement between said coil and said crucible to melt successive limited zones of said material.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Geology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Electromagnetism (AREA)
  • General Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Acoustics & Sound (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Silicon Compounds (AREA)
US3172734D 1957-03-07 warren Expired - Lifetime US3172734A (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
GB7540/57A GB827676A (en) 1957-03-07 1957-03-07 Method and apparatus for heat treating semi-conductor material
GB3627257A GB871156A (en) 1957-11-21 1957-11-21 Improvements in or relating to growing monocrystals of semiconductor material
GB37764/57A GB889615A (en) 1957-03-07 1957-12-04 Method and apparatus for processing metals
GB829558A GB871157A (en) 1958-03-14 1958-03-14 Improvements in or relating to apparatus for processing fusible materials
GB949458A GB875592A (en) 1958-03-25 1958-03-25 Improvements in or relating to methods and apparatus for melting materials
GB18772/58A GB899287A (en) 1958-06-12 1958-06-12 Method and apparatus for heat treating fusible material

Publications (1)

Publication Number Publication Date
US3172734A true US3172734A (en) 1965-03-09

Family

ID=27546551

Family Applications (1)

Application Number Title Priority Date Filing Date
US3172734D Expired - Lifetime US3172734A (en) 1957-03-07 warren

Country Status (7)

Country Link
US (1) US3172734A (en))
BE (1) BE565404A (en))
CH (3) CH385794A (en))
DE (4) DE1164982B (en))
FR (1) FR1192712A (en))
GB (1) GB889615A (en))
NL (7) NL237042A (en))

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3796548A (en) * 1971-09-13 1974-03-12 Ibm Boat structure in an apparatus for making semiconductor compound single crystals

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2512066B1 (fr) * 1981-09-03 1986-05-16 Cogema Procede de separation physique d'une phase metallique et de scories dans un four a induction

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2686865A (en) * 1951-10-20 1954-08-17 Westinghouse Electric Corp Stabilizing molten material during magnetic levitation and heating thereof
US2719799A (en) * 1952-11-13 1955-10-04 Rca Corp Zone melting furnace and method of zone melting
US2768074A (en) * 1949-09-24 1956-10-23 Nat Res Corp Method of producing metals by decomposition of halides
US2785058A (en) * 1952-04-28 1957-03-12 Bell Telephone Labor Inc Method of growing quartz crystals
US2836412A (en) * 1955-08-22 1958-05-27 Titanium Metals Corp Arc melting crucible
US2870309A (en) * 1957-06-11 1959-01-20 Emil R Capita Zone purification device
US2872299A (en) * 1954-11-30 1959-02-03 Rca Corp Preparation of reactive materials in a molten non-reactive lined crucible
US2880117A (en) * 1956-01-20 1959-03-31 Electronique & Automatisme Sa Method of manufacturing semiconducting materials
US2897329A (en) * 1957-09-23 1959-07-28 Sylvania Electric Prod Zone melting apparatus

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE518499C (de) * 1926-11-02 1931-02-16 Siemens & Halske Akt Ges Verfahren zum Schmelzen schwerschmelzbarer Metalle, insbesondere von Tantal, Wolfram, Thorium oder Legierungen dieser Metalle in einem wassergekuehlten Behaelter
DE536300C (de) * 1929-09-04 1931-10-22 Hirsch Kupfer Und Messingwerke Verfahren und Vorrichtung zum Betriebe elektrischer Induktionsoefen
DE903266C (de) * 1941-04-05 1954-02-04 Aeg Elektrischer Induktionsofen zum Schmelzen von Magnesium und seinen Legierungen
US2541764A (en) * 1948-04-15 1951-02-13 Battelle Development Corp Electric apparatus for melting refractory metals
BE510303A (en)) * 1951-11-16
DE968582C (de) * 1952-08-07 1958-03-06 Telefunken Gmbh Verfahren zur Bereitung einer Schmelze eines bei gewoehnlicher Temperatur halbleitenden Materials
GB734973A (en) * 1953-04-30 1955-08-10 Gen Electric Co Ltd Improvements in or relating to fractional fusion methods
NL107897C (en)) * 1953-05-18
DE975708C (de) * 1953-08-12 1962-06-14 Standard Elek K Lorenz Ag Verdampfer zur Verdampfung von Metallen, insbesondere im Hochvakuum
DE1007885B (de) * 1955-07-28 1957-05-09 Siemens Ag Heizanordnung fuer Halbleiterkristall-Zieheinrichtungen, welche vorzugsweise nach dem Schmelzzonenverfahren arbeiten

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2768074A (en) * 1949-09-24 1956-10-23 Nat Res Corp Method of producing metals by decomposition of halides
US2686865A (en) * 1951-10-20 1954-08-17 Westinghouse Electric Corp Stabilizing molten material during magnetic levitation and heating thereof
US2785058A (en) * 1952-04-28 1957-03-12 Bell Telephone Labor Inc Method of growing quartz crystals
US2719799A (en) * 1952-11-13 1955-10-04 Rca Corp Zone melting furnace and method of zone melting
US2872299A (en) * 1954-11-30 1959-02-03 Rca Corp Preparation of reactive materials in a molten non-reactive lined crucible
US2836412A (en) * 1955-08-22 1958-05-27 Titanium Metals Corp Arc melting crucible
US2880117A (en) * 1956-01-20 1959-03-31 Electronique & Automatisme Sa Method of manufacturing semiconducting materials
US2870309A (en) * 1957-06-11 1959-01-20 Emil R Capita Zone purification device
US2897329A (en) * 1957-09-23 1959-07-28 Sylvania Electric Prod Zone melting apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3796548A (en) * 1971-09-13 1974-03-12 Ibm Boat structure in an apparatus for making semiconductor compound single crystals

Also Published As

Publication number Publication date
DE1164982B (de) 1964-03-12
DE1293934B (de) 1969-04-30
NL225605A (en)) 1900-01-01
NL233434A (en)) 1900-01-01
DE1191970B (de) 1965-04-29
DE1226539B (de) 1966-10-13
GB889615A (en) 1962-02-21
BE565404A (en)) 1958-09-05
FR1192712A (fr) 1959-10-28
CH416572A (de) 1966-07-15
NL236919A (en)) 1900-01-01
CH435757A (de) 1967-05-15
CH385794A (de) 1964-12-31
NL239559A (en)) 1900-01-01
NL113928C (en)) 1900-01-01
NL237042A (en)) 1900-01-01
NL114078C (en)) 1900-01-01

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