GB899287A - Method and apparatus for heat treating fusible material - Google Patents
Method and apparatus for heat treating fusible materialInfo
- Publication number
- GB899287A GB899287A GB18772/58A GB1877258A GB899287A GB 899287 A GB899287 A GB 899287A GB 18772/58 A GB18772/58 A GB 18772/58A GB 1877258 A GB1877258 A GB 1877258A GB 899287 A GB899287 A GB 899287A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crucibles
- electrode
- fusible material
- silicon
- cooled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/22—Furnaces without an endless core
- H05B6/32—Arrangements for simultaneous levitation and heating
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B4/00—Electrothermal treatment of ores or metallurgical products for obtaining metals or alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B60/00—Obtaining metals of atomic number 87 or higher, i.e. radioactive metals
- C22B60/02—Obtaining thorium, uranium, or other actinides
- C22B60/0204—Obtaining thorium, uranium, or other actinides obtaining uranium
- C22B60/0286—Obtaining thorium, uranium, or other actinides obtaining uranium refining, melting, remelting, working up uranium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
- C22B9/02—Refining by liquating, filtering, centrifuging, distilling, or supersonic wave action including acoustic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/14—Crucibles or vessels
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/18—Heating of the molten zone the heating element being in contact with, or immersed in, the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B3/00—Hearth-type furnaces, e.g. of reverberatory type; Tank furnaces
- F27B3/08—Hearth-type furnaces, e.g. of reverberatory type; Tank furnaces heated electrically, with or without any other source of heat
- F27B3/085—Arc furnaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- Physics & Mathematics (AREA)
- Geology (AREA)
- General Engineering & Computer Science (AREA)
- Geochemistry & Mineralogy (AREA)
- Acoustics & Sound (AREA)
- Electromagnetism (AREA)
- Silicon Compounds (AREA)
Abstract
<PICT:0899287/III/1> In a method of heat-treating, e.g. zonerefining, a fusible material, e.g. silicon, germanium, titanium or nickel, the material is placed in one or more crucibles cooled by circulating fluid, and a direct or low-frequency alternating current is passed through the material between two crucibles, or between a crucible and an auxiliary electrode, each of which is in contact with the fusible material. The crucibles and electrode are of material having thermal and electrical conductivities not less than those of aluminium. As shown, a silver electrode 15, cooled by circulating fluid, is movably mounted above a hollow, silver crucible 10 containing silicon 13. In a further arrangement, a series of U-shaped crucibles are separated by gaps wide enough to prevent arcing but narrow enough for surface tension to prevent spillage of molten material. These crucibles may be used in conjunction with one or more electrodes 15 or alternate crucibles may be arranged to be connected to one terminal of the supply voltage and the remainder to the other terminal, so that a silicon rod may be zone-melted by connecting up adjacent crucibles in turn. Specification 827,676 is referred to.
Priority Applications (26)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL225605D NL225605A (en) | 1957-03-07 | ||
US3172734D US3172734A (en) | 1957-03-07 | warren | |
NL237042D NL237042A (en) | 1957-03-07 | ||
NL233434D NL233434A (en) | 1957-03-07 | ||
NL113928D NL113928C (en) | 1957-03-07 | ||
NL114078D NL114078C (en) | 1957-03-07 | ||
NL236919D NL236919A (en) | 1957-03-07 | ||
NL239559D NL239559A (en) | 1957-03-07 | ||
GB37764/57A GB889615A (en) | 1957-03-07 | 1957-12-04 | Method and apparatus for processing metals |
CH5587358A CH385794A (en) | 1957-03-07 | 1958-02-15 | Process for the treatment of fusible material |
DEI14490A DE1164982B (en) | 1957-03-07 | 1958-03-04 | Device for cleaning semiconductor material |
FR1192712D FR1192712A (en) | 1957-03-07 | 1958-03-05 | High purity silicon production method |
BE565404D BE565404A (en) | 1957-03-07 | 1958-03-05 | |
GB18772/58A GB899287A (en) | 1958-06-12 | 1958-06-12 | Method and apparatus for heat treating fusible material |
CH6623558A CH416572A (en) | 1957-03-07 | 1958-11-17 | Process for the production of single crystals from semiconductor material |
FR779514A FR74804E (en) | 1957-03-07 | 1958-11-19 | High purity silicon production method |
DEI15671A DE1191970B (en) | 1957-03-07 | 1958-11-24 | Device for melting treatment of metals |
CH6663958A CH435757A (en) | 1957-03-07 | 1958-11-27 | Process for the heat treatment of metals or metal alloys |
FR780733A FR75035E (en) | 1957-03-07 | 1958-12-03 | High purity silicon production method |
DEI16140A DE1293934B (en) | 1957-03-07 | 1959-03-12 | Zone melting of difficult to melt material |
FR789174A FR75328E (en) | 1957-03-07 | 1959-03-12 | High purity silicon production method |
FR790411A FR75516E (en) | 1957-03-07 | 1959-03-24 | High purity silicon production method |
DEI16553A DE1226539B (en) | 1957-03-07 | 1959-06-10 | Crucibles for melting and zone melting of semiconductor material |
FR797107A FR75871E (en) | 1957-03-07 | 1959-06-10 | High purity silicon production method |
BE579507A BE579507R (en) | 1958-06-12 | 1959-06-10 | Method and apparatus for the heat treatment of semiconductor products. |
US92051A US3140922A (en) | 1957-03-07 | 1961-02-27 | Methods and apparatus for treating reactive materials |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB18772/58A GB899287A (en) | 1958-06-12 | 1958-06-12 | Method and apparatus for heat treating fusible material |
Publications (1)
Publication Number | Publication Date |
---|---|
GB899287A true GB899287A (en) | 1962-06-20 |
Family
ID=10118157
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB18772/58A Expired GB899287A (en) | 1957-03-07 | 1958-06-12 | Method and apparatus for heat treating fusible material |
Country Status (2)
Country | Link |
---|---|
BE (1) | BE579507R (en) |
GB (1) | GB899287A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2565604A1 (en) * | 1984-06-07 | 1985-12-13 | Wedtech Corp | METHOD AND DEVICE FOR DRAWING SINGLE CRYSTALLINE SILICON BARS |
CN113814522A (en) * | 2021-08-11 | 2021-12-21 | 西北工业大学 | Electric arc melting system |
-
1958
- 1958-06-12 GB GB18772/58A patent/GB899287A/en not_active Expired
-
1959
- 1959-06-10 BE BE579507A patent/BE579507R/en active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2565604A1 (en) * | 1984-06-07 | 1985-12-13 | Wedtech Corp | METHOD AND DEVICE FOR DRAWING SINGLE CRYSTALLINE SILICON BARS |
CN113814522A (en) * | 2021-08-11 | 2021-12-21 | 西北工业大学 | Electric arc melting system |
Also Published As
Publication number | Publication date |
---|---|
BE579507R (en) | 1959-12-10 |
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