GB827676A - Method and apparatus for heat treating semi-conductor material - Google Patents

Method and apparatus for heat treating semi-conductor material

Info

Publication number
GB827676A
GB827676A GB7540/57A GB754057A GB827676A GB 827676 A GB827676 A GB 827676A GB 7540/57 A GB7540/57 A GB 7540/57A GB 754057 A GB754057 A GB 754057A GB 827676 A GB827676 A GB 827676A
Authority
GB
United Kingdom
Prior art keywords
crucible
zone
induced
coil
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7540/57A
Inventor
Reginald Walter Warren
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US3172734D priority Critical patent/US3172734A/en
Priority to NL233434D priority patent/NL233434A/xx
Priority to NL225605D priority patent/NL225605A/xx
Priority to NL236919D priority patent/NL236919A/xx
Priority to NL113928D priority patent/NL113928C/xx
Priority to NL114078D priority patent/NL114078C/xx
Priority to NL239559D priority patent/NL239559A/xx
Priority to NL237042D priority patent/NL237042A/xx
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB7540/57A priority patent/GB827676A/en
Priority to GB37764/57A priority patent/GB889615A/en
Priority to CH5587358A priority patent/CH385794A/en
Priority to DEI14490A priority patent/DE1164982B/en
Priority to FR1192712D priority patent/FR1192712A/en
Priority to BE565404D priority patent/BE565404A/xx
Priority to CH6623558A priority patent/CH416572A/en
Priority to FR779514A priority patent/FR74804E/en
Priority to DEI15671A priority patent/DE1191970B/en
Priority to CH6663958A priority patent/CH435757A/en
Priority to FR780733A priority patent/FR75035E/en
Priority to FR789174A priority patent/FR75328E/en
Priority to DEI16140A priority patent/DE1293934B/en
Priority to FR790411A priority patent/FR75516E/en
Priority to FR797107A priority patent/FR75871E/en
Priority to DEI16553A priority patent/DE1226539B/en
Publication of GB827676A publication Critical patent/GB827676A/en
Priority to US92051A priority patent/US3140922A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/32—Arrangements for simultaneous levitation and heating
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B4/00—Electrothermal treatment of ores or metallurgical products for obtaining metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B60/00—Obtaining metals of atomic number 87 or higher, i.e. radioactive metals
    • C22B60/02—Obtaining thorium, uranium, or other actinides
    • C22B60/0204—Obtaining thorium, uranium, or other actinides obtaining uranium
    • C22B60/0286—Obtaining thorium, uranium, or other actinides obtaining uranium refining, melting, remelting, working up uranium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
    • C22B9/02—Refining by liquating, filtering, centrifuging, distilling, or supersonic wave action including acoustic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/14—Crucibles or vessels
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/18—Heating of the molten zone the heating element being in contact with, or immersed in, the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B3/00—Hearth-type furnaces, e.g. of reverberatory type; Tank furnaces
    • F27B3/08—Hearth-type furnaces, e.g. of reverberatory type; Tank furnaces heated electrically, with or without any other source of heat
    • F27B3/085—Arc furnaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/20—Recycling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/25—Process efficiency

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Acoustics & Sound (AREA)
  • General Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

<PICT:0827676/III/1> Semi-conductor material, such as silicon or germanium, is zone refined in an elongated hollow walled crucible C, shown in cross-section in Fig. 2, of metal of high electrical and thermal conductivity, by melting a limited zone of the material B by means of high - frequency heating coils A, and causing the molten zone to traverse the length of the material while circulating liquid F through the hollow walls of the crucible to cool the crucible. The crucible may be made of copper, silver or gold. When silicon is treated it may be heated initially by a susceptor to a temperature at which eddy currents are induced therein. The crucible may be arranged with the material below the centre of the coil so that the reaction between the electromagnetic field of the coil and the field due to the currents induced in the metal of the crucible with the field induced in the molten zone of the material, lifts the material out of contact with the crucible.
GB7540/57A 1957-03-07 1957-03-07 Method and apparatus for heat treating semi-conductor material Expired GB827676A (en)

Priority Applications (25)

Application Number Priority Date Filing Date Title
NL233434D NL233434A (en) 1957-03-07
NL225605D NL225605A (en) 1957-03-07
NL236919D NL236919A (en) 1957-03-07
NL113928D NL113928C (en) 1957-03-07
NL114078D NL114078C (en) 1957-03-07
US3172734D US3172734A (en) 1957-03-07 warren
NL239559D NL239559A (en) 1957-03-07
NL237042D NL237042A (en) 1957-03-07
GB7540/57A GB827676A (en) 1957-03-07 1957-03-07 Method and apparatus for heat treating semi-conductor material
GB37764/57A GB889615A (en) 1957-03-07 1957-12-04 Method and apparatus for processing metals
CH5587358A CH385794A (en) 1957-03-07 1958-02-15 Process for the treatment of fusible material
DEI14490A DE1164982B (en) 1957-03-07 1958-03-04 Device for cleaning semiconductor material
BE565404D BE565404A (en) 1957-03-07 1958-03-05
FR1192712D FR1192712A (en) 1957-03-07 1958-03-05 High purity silicon production method
CH6623558A CH416572A (en) 1957-03-07 1958-11-17 Process for the production of single crystals from semiconductor material
FR779514A FR74804E (en) 1957-03-07 1958-11-19 High purity silicon production method
DEI15671A DE1191970B (en) 1957-03-07 1958-11-24 Device for melting treatment of metals
CH6663958A CH435757A (en) 1957-03-07 1958-11-27 Process for the heat treatment of metals or metal alloys
FR780733A FR75035E (en) 1957-03-07 1958-12-03 High purity silicon production method
FR789174A FR75328E (en) 1957-03-07 1959-03-12 High purity silicon production method
DEI16140A DE1293934B (en) 1957-03-07 1959-03-12 Zone melting of difficult to melt material
FR790411A FR75516E (en) 1957-03-07 1959-03-24 High purity silicon production method
FR797107A FR75871E (en) 1957-03-07 1959-06-10 High purity silicon production method
DEI16553A DE1226539B (en) 1957-03-07 1959-06-10 Crucibles for melting and zone melting of semiconductor material
US92051A US3140922A (en) 1957-03-07 1961-02-27 Methods and apparatus for treating reactive materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7540/57A GB827676A (en) 1957-03-07 1957-03-07 Method and apparatus for heat treating semi-conductor material

Publications (1)

Publication Number Publication Date
GB827676A true GB827676A (en) 1960-02-10

Family

ID=9835068

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7540/57A Expired GB827676A (en) 1957-03-07 1957-03-07 Method and apparatus for heat treating semi-conductor material

Country Status (1)

Country Link
GB (1) GB827676A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1793007A1 (en) * 2005-12-05 2007-06-06 The Japan Steel Works, Ltd. Method for producing unidirectionally solidified hydrogen storage alloy

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1793007A1 (en) * 2005-12-05 2007-06-06 The Japan Steel Works, Ltd. Method for producing unidirectionally solidified hydrogen storage alloy

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