US20190259648A1 - Patterned vacuum chuck for double-sided processing - Google Patents

Patterned vacuum chuck for double-sided processing Download PDF

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Publication number
US20190259648A1
US20190259648A1 US16/260,675 US201916260675A US2019259648A1 US 20190259648 A1 US20190259648 A1 US 20190259648A1 US 201916260675 A US201916260675 A US 201916260675A US 2019259648 A1 US2019259648 A1 US 2019259648A1
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United States
Prior art keywords
cavities
substrate
conduits
chucking
pair
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Abandoned
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US16/260,675
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English (en)
Inventor
Joseph Yudovsky
Visweswaren Sivaramakrishnan
Ludovic Godet
Rutger Meyer TIMMERMAN THIJSSEN
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Applied Materials Inc
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Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to US16/260,675 priority Critical patent/US20190259648A1/en
Publication of US20190259648A1 publication Critical patent/US20190259648A1/en
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: GODET, LUDOVIC, YUDOVSKY, JOSEPH, SIVARAMAKRISHNAN, VISWESWAREN, TIMMERMAN THIJSSEN, Rutger Meyer
Priority to US16/993,069 priority patent/US11222809B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details

Definitions

  • Embodiments of the present disclosure generally relate to a substrate chuck. More specifically, embodiments described herein relate to a patterned vacuum chuck.
  • Substrate chucking apparatus are commonly used in the semiconductor and display industries to support a substrate during transfer or processing of the substrate. Emerging technologies have lead to the development of various advanced processing techniques for device and structure fabrication on substrates. For example, fabrication of a waveguide apparatus for virtual reality and augmented reality applications has pushed the boundaries of conventional substrate processing techniques.
  • Waveguide apparatus incorporate microstructures formed on a glass or glass-like substrate. Often, microstructures are formed on a front side of the substrate and a backside of the substrate. However, handling and supporting a substrate with microstructures formed on the front and back of the substrate during processing is challenging. For example, conventional chucking apparatus may damage microstructures formed on a backside of the substrate while the front side is being processed, or vice versa.
  • a substrate chucking apparatus in another embodiment, includes a circular body having a chucking surface, a plurality of cavities formed in the chucking surface, a plurality of first conduits, each of the plurality of first conduits coupled to a surface port formed in the chucking surface, a second conduit coupled to a first pair of the plurality of cavities, a third conduit coupled to a second pair of the plurality of cavities, and a fourth conduit coupled to a third pair of the plurality of cavities, wherein a pressure in each of the pairs of the cavities is individually controlled
  • a method for processing a substrate includes forming a plurality of structures on a first major surface of the substrate, positioning the first major surface on a chuck, wherein each of the plurality of structures are positioned in a respective cavity formed in a chucking surface of the chuck, and applying a first pressure to the major surface through a plurality of surface ports while applying a second pressure in pairs of the cavities, the first pressure being different than the second pressure.
  • FIG. 1A illustrates a plan view of a substrate with dies having microstructures formed thereon according to an embodiment described herein.
  • FIG. 1B illustrates a cross-sectional view of the substrate of FIG. 1A taken along line 1 B- 1 B according to an embodiment described herein.
  • FIG. 2A illustrates a cross-section view of a vacuum chucking apparatus according to an embodiment described herein.
  • FIG. 2B is a plan view of the vacuum chucking apparatus of FIG. 2A .
  • FIG. 3A is a schematic sectional view of a portion of a transfer process of a patterned template onto a substrate.
  • FIGS. 3B and 3C are sectional view of portions of the vacuum chucking apparatus having a substrate thereon.
  • FIG. 4A illustrates a plan view of the vacuum chucking apparatus of FIG. 2 according to an embodiment described herein.
  • FIG. 4B illustrates a cross-sectional view of the vacuum chucking apparatus of FIG. 4A .
  • FIG. 5A illustrates a plan view of the vacuum chucking apparatus of FIG. 2 according to an embodiment described herein.
  • FIG. 5B is a schematic sectional view of the vacuum chucking apparatus along lines 5 B- 5 B of FIG. 5A .
  • FIG. 6 illustrates a sectional view of a portion of a vacuum chucking apparatus according to an embodiment described herein.
  • Embodiments described herein relate to a substrate chucking apparatus having a plurality of cavities formed therein. A portion of the cavities are utilized to receive a microstructure previously formed on one major side of a substrate which is chucked to the cucking apparatus, and enabling formation of microstructures on another major side of the substrate.
  • the chucking apparatus may be particularly useful in lithography processes, for example, nanoimprint lithography (NIL) processes, such as substrate conformal imprint lithography (SCIL). While some embodiments are exemplarily described for use with an SCIL process, the disclosure is not limited to the SCIL process and may be utilized with other NIL processes. Other NIL processes include using a roller that contacts a flexible template for transferring a pattern to a substrate.
  • NIL nanoimprint lithography
  • SCIL substrate conformal imprint lithography
  • Other NIL processes include using a roller that contacts a flexible template for transferring a pattern to a substrate.
  • FIG. 1A illustrates a plan view of a substrate 100 with dies having microstructures 106 formed thereon according to a lithography process.
  • the substrate 100 is formed from a glass or glass-like material, such as quartz or sapphire.
  • the substrate is formed from a semiconducting material, such as a silicon material or the like.
  • the substrate 100 is illustrated as having a substantially circular shape, it is contemplated that the substrate 100 may be polygonal in shape, such as quadrilateral in shape, for example, rectangular or square shaped.
  • the substrate 100 is illustrated as having a plurality of dies 104 formed thereon.
  • the dies 104 correspond to areas of the substrate 100 which are patterned with desired structures for subsequent utilization in various devices, such as a computing device, an optical device, or the like.
  • the dies 104 include the microstructures 106 formed thereon.
  • the microstructures 106 are features formed on the dies 104 by various fabrication processes, such as lithography processes, for example, NIL processes. Alternatively, the microstructures 106 are features which are etched or deposited on the substrate 100 .
  • the microstructures 106 are grating structures and the die 104 is contemplated to be a waveguide or a portion of a waveguide apparatus.
  • the dies 104 are arranged on the substrate 100 with kerf areas 108 formed around or between adjacent dies 104 .
  • the kerf areas 108 are regions of the substrate surface which are not occupied by the dies 104 .
  • the kerf areas 108 substantially surround each individual die 104 and space individual dies 104 from one another.
  • the kerf areas 108 may also extend between individual dies 104 and a perimeter of the substrate 100 .
  • the kerf areas 108 have substantially no microstructures or features formed thereon.
  • the kerf areas 108 are regions which are subsequently removed during dicing operations to separate individual dies 104 during singulation.
  • FIG. 1B illustrates a cross-sectional view of the substrate 100 of FIG. 1A taken along line 1 B- 1 B according to an embodiment described herein.
  • the kerf areas 108 are regions which are disposed between adjacent dies 104 .
  • the substrate 100 is illustrated as having the microstructures 106 formed on a first side 102 of the substrate 100 .
  • the microstructures 106 extend a distance of between about 100 um and about 500 um from the first side 102 of the substrate 100 .
  • the first side 102 is the front side of the substrate 100 .
  • a second side 110 of the substrate 100 exists opposite and parallel to the first side 102 .
  • the second side 110 is unprocessed such that no features or microstructures are formed on the second side 110 .
  • FIG. 2A illustrates a cross-section view of a vacuum chucking apparatus 200 according to an embodiment described herein.
  • the substrate 100 is illustrated as having the first side contacting the vacuum chucking apparatus 200 such that the second side 110 is oriented away from the vacuum chucking apparatus 200 in a position suitable for processing the second side 110 .
  • the vacuum chucking apparatus 200 includes a body 201 having a chucking surface 202 and a bottom surface 204 oriented opposite to the chucking surface 202 .
  • the body 201 is formed from a metallic material, such as aluminum, stainless steel, or alloys, combinations, and mixtures thereof.
  • the body 201 is formed from a ceramic material, such as a silicon nitride material, an aluminum nitride material, an alumina material, or combinations and mixtures thereof.
  • a coating is disposed on the chucking surface 202 of the body 201 .
  • the coating is a polymeric material, such as one or more of a polyimide material, a polyamide material, or a polytetrafluoroethylene (PTFE) material.
  • PTFE polytetrafluoroethylene
  • a plurality of cavities 206 are formed in the body 201 .
  • the cavities 206 are disposed within the body 201 and extend into the body 201 from the chucking surface 202 .
  • the cavities 206 are defined by a bottom surface 203 and sidewalls 205 .
  • a depth of the cavities 206 is between about 100 um and about 1000 um, for example between about 300 um and about 700 um. It is contemplated that the depth of the cavities 206 is sufficient to accommodate the microstructures 106 formed on the substrate 100 such that the microstructures 106 remain out of contact with the body 201 when the substrate 100 is positioned on the vacuum chucking apparatus 200 .
  • the plurality of cavities 206 are formed in a material layer disposed on the body 201 .
  • a shape of the cavities 206 corresponds to a shape of the dies 104 .
  • the shape of the cavities 206 would similarly be square or rectangular in shape.
  • the size of the cavities 206 may be larger or smaller than an area corresponding to the dies 104 .
  • a plurality of first ports 208 are formed in the body 201 and a plurality of second ports (surface ports) 210 are formed in the chucking surface 202 of the body 201 .
  • Each of the plurality of first ports 208 are in fluid communication with a respective one of the cavities 206 .
  • the plurality of second ports 210 positioned between the cavities 206 .
  • the plurality of second ports 210 are also formed in the chucking surface 202 of the body radially outward of the plurality of cavities 206 .
  • a plurality of first conduits 212 extend from the plurality of first ports 208 and the plurality of second ports 210 through the body 201 to the bottom surface 204 .
  • Each of the first plurality of conduits 212 are coupled to a first vacuum source 214 .
  • the first vacuum source 214 is in fluid communication with the cavities 206 as well as the chucking surface 202 of the body 201 via the first plurality of conduits 212 .
  • FIG. 2B is a plan view of the vacuum chucking apparatus 200 of FIG. 2A .
  • the plurality of first ports 208 in the cavities 206 as well as the plurality of second ports 210 at the chucking surface 202 are substantially circular in shape. While circular ports may improve the ease of fabrication of the vacuum chucking apparatus 200 , it is contemplated that any port shape may be utilized.
  • several second ports 210 are shown distributed across the chucking surface 202 of the body 201 , any number, arrangement, or distribution of second ports 210 suitable to enable substantially flat chucking of the substrate 100 are contemplated to be within the scope of this disclosure.
  • vacuum pressure is generated by the first vacuum source 214 to chuck the substrate 100 to the body 201 at regions remote from the cavities 206 .
  • the vacuum pressure from the first vacuum source 214 is utilized to stabilize the substrate 100 during processing, particularly at areas corresponding to positions of the microstructures 106 on the substrate 100 .
  • a patterned template (patterned from a master pattern) is effectively pressed against a resin layer disposed on the second side 110 of the substrate.
  • the patterned template is provided onto a flexible optically transparent substrate that is pressed at certain intervals and/or pressures against the resin layer on the substrate 100 . It is contemplated that vacuum chucking the substrate 100 to the body 201 is sufficient to achieve desirable substrate flatness for applying the patterned template to the second side 110 of the substrate.
  • the resin is cured without removing the patterned template and the flexible optically transparent substrate from the second side 110 of the substrate.
  • the patterned template and the flexible optically transparent substrate are removed from the second side 110 of the substrate.
  • the patterned template and the flexible optically transparent substrate are effectively peeled off of the cured resin layer on the second side 110 of the substrate, which creates bending moments and/or stresses in the substrate 100 .
  • the removal process is described in more detail in FIGS. 3A-3C .
  • FIG. 3A is a schematic sectional view of a portion of a transfer process of a patterned template 300 onto the resin layer 315 of the substrate 100 .
  • the substrate 100 is chucked to a vacuum chucking apparatus 200 as described herein.
  • the patterned template 300 includes a plurality of features 305 coupled to a flexible optically transparent substrate 310 .
  • Each of the plurality of features 305 may be protrusions, depressions, or a combination thereof, which is pressed against a resin layer 315 disposed on the second side 110 of the substrate 100 .
  • the patterned template 300 is applied to the resin layer 315 by a plate 318 having a plurality of variable pressure grooves 320 that incrementally applies positive pressure to the patterned template 300 in order to transfer a pattern of structures 325 in or on the resin layer 315 .
  • the patterned template 300 is incrementally pressured against the resin layer 315 from a first side 327 A of the substrate 100 to an opposing second side 327 B of the substrate 100 by selectively applying pressure from the variable pressure grooves 320 of the plate 318 .
  • the patterned template 300 is peeled away from the resin layer 315 from the second side 327 B of the substrate 100 to the first side 327 A of the substrate 100 by selectively applying vacuum from the variable pressure grooves 320 of the plate 318 .
  • This incremental vacuum application by the plate 318 forms a separation line 330 that moves from the second side 327 B of the substrate 100 to the first side 327 A of the substrate 100 based on the application of vacuum pressure from the variable pressure grooves 320 .
  • the force provided by the variable pressure grooves 320 in pulling the patterned template 300 away from the substrate 100 may dislodge the substrate from the vacuum chucking apparatus 200 .
  • the force provided by the variable pressure grooves 320 in pulling the patterned template 300 away from the substrate 100 may deform the substrate 100 at the separation line 330 . If deformation of the substrate 100 exceeds a specified value, the microstructures 106 on the first side 102 of the substrate 100 may be damaged.
  • the vacuum chucking apparatus 200 as described herein is utilized to prevent or minimize deformation of the substrate 100 particularly at positions corresponding to the cavities 206
  • FIGS. 3B and 3C are sectional view of portions of the vacuum chucking apparatus 200 having the substrate 100 thereon.
  • FIGS. 3B and 3C show a slight deformation in the substrate 100 during removal of the patterned template 300 of FIG. 3A based on different positions of the separation line 330 shown in FIG. 3A .
  • FIG. 3B shows an active cavity 335 A depicting the substrate 100 in a convex orientation corresponding to pulling of the substrate 100 at the separation line 330 .
  • FIG. 3C shows an idle cavity 335 B depicting the substrate 100 in a concave orientation due to vacuum application from the first vacuum source 214 through one of the first ports 208 either before or after the separation line 330 has passed thereacross.
  • the active cavity 335 A and the idle cavity 335 B are each one of the cavities 206 shown in FIGS. 2A and 2B .
  • the pressure within each of the active cavity 335 A and the idle cavity 335 B is the same.
  • the force of the variable pressure grooves 320 of the plate 318 overcomes the pressure within the active cavity 335 A.
  • the degree of deformation depicted as reference numeral 340 , is kept within specifications utilizing the vacuum chucking apparatus as disclosed herein.
  • FIG. 4A illustrates a plan view of the vacuum chucking apparatus 200 of FIG. 2 according to an embodiment described herein.
  • the illustrated second (surface) ports 210 are in an irregularly shaped groove pattern to increase the surface area of the substrate exposed to vacuum relative to the embodiment shown in FIGS. 2A and 2B .
  • FIG. 4B illustrates a cross-sectional view of the vacuum chucking apparatus 200 of FIG. 4A .
  • the vacuum chucking apparatus 200 includes a second plurality of ports 404 , a second plurality of conduits 402 , and a second vacuum source 406 .
  • the second plurality of ports 404 are formed in the bottom surface 203 of the cavities 206 and the second plurality of conduits 402 extend from each of the second plurality of ports 404 through the body 201 to the bottom surface 204 .
  • the second plurality of conduits 402 are coupled to the second vacuum source 406 accordingly.
  • the vacuum chucking apparatus 200 of FIGS. 4A and 4B enables differential pressure chucking of the substrate 100 .
  • the first vacuum source 214 which is in fluid communication with the substrate 100 via the first plurality of conduits 212 and the first plurality of ports 210 , generates a first vacuum pressure to chuck the substrate to the chucking surface 202 of the body 201 .
  • the second vacuum source 406 which is in fluid communication with the cavities 206 via the second plurality of conduits 402 and the second plurality of ports 404 , generates a second vacuum pressure to further reduce a pressure with the cavities 206 and reduce or eliminate the degree of deformation of the substrate 100 .
  • the first vacuum pressure may be greater than, less than, or equal to the second vacuum pressure, depending upon desired chucking characteristics.
  • the first vacuum pressure and the second vacuum pressure may be below ambient pressure where the vacuum chucking apparatus 200 is in operation.
  • the ambient pressure may be atmospheric pressure (e.g., at or about 760 millimeters mercury (mmHg)).
  • FIG. 5A illustrates a plan view of the vacuum chucking apparatus 200 of FIG. 2 according to an embodiment described herein.
  • FIG. 5B is a schematic sectional view of the vacuum chucking apparatus 200 along lines 5 B- 5 B of FIG. 5A .
  • the vacuum chucking apparatus 200 is provided with multiple pressure zones which includes a first pressure zone 500 A, a second pressure zone 500 B, a third pressure zone 500 C and a fourth pressure zone 500 D.
  • the fourth pressure zone 500 D is defined by a groove pattern 505 that is utilized to chuck portions of a substrate 100 not having microstructures 106 formed thereon.
  • the cavities 206 shown as cavities 510 A- 510 C, are utilized to chuck portions of the substrate having the microstructures 106 as described above.
  • Each of the cavities 510 A- 510 C are in fluid communication with a first vacuum source 515 A, a second vacuum source 515 B and a third vacuum source 515 C, and the groove pattern 505 is in fluid communication with a fourth vacuum source 515 D.
  • Each of the vacuum sources 515 A- 515 D are independently controlled.
  • a plurality of first conduits 520 are coupled to the fourth vacuum source 515 D.
  • a surface opening 525 of each of the plurality of first conduits 520 is in fluid communication with the groove pattern 505 of FIG. 5A , which is utilized to chuck portions of the substrate 100 that are not disposed over the cavities 510 A- 510 C.
  • a plurality of second conduits 530 are coupled to the cavities 510 A (not shown in the side view of FIG. 5B ) and the first vacuum source 515 A.
  • a plurality of third conduits 535 are coupled to the cavities 510 B and the second vacuum source 515 B.
  • An opening 540 of each of the plurality of third conduits 535 provide negative pressure application to the exposed portions of the substrate 100 in the cavities 510 B.
  • a plurality of fourth conduits 545 are coupled to the cavities 510 C (not shown in the side view of FIG. 5B ) and the third vacuum source 515 C. While not shown in the side view of FIG. 5B , the plurality of second conduits 530 and the plurality of fourth conduits 545 include openings, similar to the openings 540 , which provide negative pressure application to the exposed portions of the substrate 100 in the cavities 510 A and 510 C, respectively.
  • Pressure in the fourth pressure zone 500 D may remain constant while the pressure in the first pressure zone 500 A, the second pressure zone 500 B and the third pressure zone 500 C is individually controlled.
  • the pressures in the first pressure zone 500 A, the second pressure zone 500 B and the third pressure zone 500 C may be varied based on the position of the separation line 330 . For example, when the separation line 330 is positioned over the substrate at the locations of the cavities 510 A as shown in the first pressure zone 500 A, pressure is lower in the cavities 510 A as compared to a pressure of the cavities 510 B and 510 C.
  • the separation line 330 moves across the substrate, such as above the cavities 510 B in the second pressure zone 500 B, the pressure of the cavities 510 A and 510 C is higher than a pressure of the cavities 510 B. Similarly, when the separation line 330 is above the cavities 510 C, the pressure is lower in the cavities 510 C as compared to a pressure of the cavities 510 A and 5106 .
  • FIG. 6 illustrates a sectional view of a portion of a vacuum chucking apparatus 200 according to an embodiment described herein.
  • a cavity 206 is provided with a support member 600 .
  • the support member 600 is utilized to enable use of lower pressure within the cavity 206 while reducing or eliminating the degree of deformation 340 of the substrate 100 .
  • the support member 600 may be a removable feature or may be formed as a portion of the vacuum chucking apparatus 200 .
  • the support member 600 may be used with certain types of microstructures 106 where contact of the substrate 100 with the support member 600 does not damage the microstructures 106 .
  • a substrate chucking apparatus having cavities formed therein enables chucking of substrates with surfaces having microstructures formed thereon for dual sided substrate processing.
  • the chucking apparatus include various vacuum chucking elements as described above that are utilized to reduce or eliminate the degree of deformation 340 of the substrate 100 during processing.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
US16/260,675 2018-02-20 2019-01-29 Patterned vacuum chuck for double-sided processing Abandoned US20190259648A1 (en)

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US16/260,675 US20190259648A1 (en) 2018-02-20 2019-01-29 Patterned vacuum chuck for double-sided processing
US16/993,069 US11222809B2 (en) 2018-02-20 2020-08-13 Patterned vacuum chuck for double-sided processing

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US16/260,675 US20190259648A1 (en) 2018-02-20 2019-01-29 Patterned vacuum chuck for double-sided processing

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US20240027896A1 (en) * 2022-07-25 2024-01-25 Applied Materials, Inc. Advanced-packaging high-volume-mode digital-lithography-tool
US20240084454A1 (en) * 2021-04-16 2024-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool

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Publication number Priority date Publication date Assignee Title
KR20220077174A (ko) * 2020-11-30 2022-06-09 삼성전자주식회사 기판 이송 장치
US20220319903A1 (en) * 2021-03-31 2022-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for substrate handling

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