US20180016678A1 - Multi-layer coating with diffusion barrier layer and erosion resistant layer - Google Patents

Multi-layer coating with diffusion barrier layer and erosion resistant layer Download PDF

Info

Publication number
US20180016678A1
US20180016678A1 US15/646,602 US201715646602A US2018016678A1 US 20180016678 A1 US20180016678 A1 US 20180016678A1 US 201715646602 A US201715646602 A US 201715646602A US 2018016678 A1 US2018016678 A1 US 2018016678A1
Authority
US
United States
Prior art keywords
precursor
layer
erosion resistant
diffusion barrier
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US15/646,602
Other languages
English (en)
Inventor
David Fenwick
Xiaowei Wu
Jennifer Y. Sun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to US15/646,602 priority Critical patent/US20180016678A1/en
Priority to TW106123559A priority patent/TW201823487A/zh
Priority to TW107101620A priority patent/TW201827626A/zh
Priority to JP2018503240A priority patent/JP7053452B2/ja
Priority to PCT/US2017/042110 priority patent/WO2018013909A1/en
Priority to KR1020187004122A priority patent/KR102481924B1/ko
Priority to CN201780002518.0A priority patent/CN107849704A/zh
Priority to CN201810637499.5A priority patent/CN108531907A/zh
Priority to KR1020197005973A priority patent/KR102481950B1/ko
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FENWICK, DAVID, SUN, JENNIFER Y., WU, XIAOWEI
Priority to US15/844,335 priority patent/US11008653B2/en
Publication of US20180016678A1 publication Critical patent/US20180016678A1/en
Priority to JP2019135023A priority patent/JP7048544B2/ja
Abandoned legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/048—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material with layers graded in composition or physical properties

Definitions

  • Embodiments of the present disclosure relate to multi-layer coatings acting as a diffusion barrier and as an erosion resistant coating, a method for forming a multi-layer coating, and a process chamber component coated with a multi-layer coating.
  • the multi-layer coating may comprise a diffusion barrier layer selected from a group consisting of TiN x , TaN x , Zr 3 N 4 , and TiZr x N y .
  • the multi-layer coating may further comprise an erosion resistant layer selected from a group consisting of YF 3 , Y 2 O 3 , Er 2 O 3 , A 1 2 O 3 , ZrO 2 , ErAl x O y , YO x F y , YAl x O y , YZr x O y and YZr x Al y O z .
  • the erosion resistant layer may cover the diffusion barrier layer.
  • a method for forming a multi-layer coating includes depositing a diffusion barrier layer onto a surface of an article.
  • the diffusion barrier layer may be deposited using a first deposition process selected from a group consisting of atomic layer deposition, physical vapor deposition, and chemical vapor deposition.
  • the diffusion barrier layer may be selected from a group consisting of TiN x , TaN x , Zr 3 N 4 , and TiZr x N y .
  • the method further includes depositing an erosion resistant layer onto the diffusion barrier layer.
  • the erosion resistant layer may be deposited using a second deposition process selected from the group consisting of atomic layer deposition, physical vapor deposition, and chemical vapor deposition.
  • the erosion resistant layer may be selected from a group consisting of YF 3 , Y 2 O 3 , Er 2 O 3 , A 1 2 O 3 , ZrO 2 , ErAl x O y , YO x F y , YAl x O y , YZr x O y and YZr x Al y O z .
  • the present invention covers a coated process chamber component.
  • the coated process chamber component may comprise a process chamber component having a surface and a multi-layer coating coated on the surface.
  • the multi-layer coating may comprise a diffusion barrier layer selected from a group consisting of TiN x , TaN x , Zr 3 N 4 , and TiZr x N y .
  • the multi-layer coating may further comprise an erosion resistant layer selected from a group consisting of YF 3 , Y 2 O 3 , Er 2 O 3 , Al 2 O 3 , ZrO 2 , ErAl x O y , YO x F y , YAl x O y , YZr x O y and YZr x Al y O z .
  • the erosion resistant layer may cover the diffusion barrier layer.
  • FIG. 1 depicts a sectional view of one embodiment of a processing chamber.
  • FIG. 2 depicts a deposition mechanism applicable to a variety of Atomic Layer Deposition (ALD) techniques, in accordance with embodiments of the present invention.
  • ALD Atomic Layer Deposition
  • FIG. 3 depicts a deposition mechanism applicable to a variety of Chemical Vapor Deposition (CVD) techniques, in accordance with embodiments of the present invention.
  • CVD Chemical Vapor Deposition
  • FIG. 4 depicts a deposition mechanism applicable to a variety of Physical Vapor Deposition (PVD) techniques, in accordance with embodiments of the present invention.
  • PVD Physical Vapor Deposition
  • FIG. 5 illustrates a method for forming a multi-layer coating on an article according to an embodiment.
  • FIG. 6A illustrates a coated chamber component having a diffusion barrier layer with intact component layers and an erosion resistant layer with intact component layers, in accordance with embodiments of the present invention.
  • FIG. 6B illustrates a coated chamber component having a diffusion barrier layer with intact component layers and an interdiffused erosion resistant layer, in accordance with embodiments of the present invention.
  • FIG. 6C illustrates a coated chamber component having an interdiffused diffusion barrier layer and an erosion resistant layer with intact component layers, in accordance with embodiments of the present invention.
  • FIG. 6D illustrates a coated chamber component having an interdiffused diffusion barrier layer and an interdiffused erosion resistant layer, in accordance with embodiments of the present invention.
  • Embodiments are described herein with reference to a multi-layer coating that includes a nitride layer acting as a diffusion barrier layer and a rare earth oxide or fluoride layer acting as a corrosion and/or erosion resistant layer.
  • the layers may be deposited through thin film deposition techniques such as ALD, CVD, and PVD.
  • the nitride layer may be formed from constituents such as TiN, TaN, and Zr 3 N 4 .
  • the diffusion barrier layer may prevent diffusion of elements within a chamber component to a surface of a substrate during the substrate processing.
  • the diffusion barrier layer may prevent diffusion of metals, such as copper, within a chamber component to a substrate's surface during substrate processing.
  • the diffusion barrier layer assists in preventing the chemical constituents of the chamber component from contaminating the substrate.
  • the erosion or corrosion resistant layer may be a multi-component layer formed from constituents such as Al 2 O 3 , Y 2 O 3 , ZrO 2 , YF 3 , and Er 2 O 3 .
  • the corrosion and/or erosion resistant layer may be deposited on the diffusion barrier layer to prevent erosion or corrosion of the diffusion barrier layer and the underlying chamber component in the corrosive gas or plasma environment present in the process chamber.
  • the thin film deposition techniques assist in obtaining conformal coating of substantially uniform thickness of chamber components having simple as well as complex geometric shapes (with holes and large aspect ratios).
  • the multi-layer stack having a bottom thin film diffusion barrier layer and a top thin film erosion or corrosion resistant layer may minimize both diffusion based contamination of processed wafers as well as shed particle based contamination of the processed wafers.
  • the diffusion barrier layer may seal the underlying article that is coated from diffusion of contaminants (for example, metal contaminant such as copper), while the erosion or corrosion resistant layer may protect both the article and the diffusion layer from erosion and/or corrosion by process gases and/or a plasma environment.
  • FIG. 1 is a sectional view of a semiconductor processing chamber 100 having one or more chamber components that are coated with a multi-layer coating in accordance with embodiments of the present invention.
  • the processing chamber 100 may be used for processes in which a corrosive plasma environment having plasma processing conditions is provided.
  • the processing chamber 100 may be a chamber for a plasma etcher or plasma etch reactor, a plasma cleaner, and so forth.
  • chamber components that may include a multi-layer coating include chamber components with complex shapes and holes having large aspect ratios.
  • Some exemplary chamber components include a substrate support assembly 148 , an electrostatic chuck (ESC) 150 , a ring (e.g., a process kit ring or single ring), a chamber wall, a base, a gas distribution plate, a showerhead, gas lines, a nozzle, a lid, a liner, a liner kit, a shield, a plasma screen, a flow equalizer, a cooling base, a chamber viewport, a chamber lid, and so on.
  • the multi-layer coating which is described in greater detail below, is applied using an ALD process, a CVD process, a PVD process, or combinations thereof.
  • ALD, CVD, and PVD which are described in greater detail with reference to FIGS. 2-4 , allow for the application of a conformal thin film coating of relatively uniform thickness on all types of components including components with complex shapes and holes with large aspect ratios.
  • the substrate support assembly 148 has a multi-layer coating 136 , in accordance with one embodiment.
  • any of the other chamber components such as showerheads, gas lines, electrostatic chucks, nozzles and others, may also be coated with a multi-layer coating.
  • the processing chamber 100 includes a chamber body 102 and a showerhead 130 that enclose an interior volume 106 .
  • the showerhead 130 may include a showerhead base and a showerhead gas distribution plate. Alternatively, the showerhead 130 may be replaced by a lid and a nozzle in some embodiments.
  • the chamber body 102 may be fabricated from aluminum, stainless steel or other suitable material.
  • the chamber body 102 generally includes sidewalls 108 and a bottom 110 . Any of the showerhead 130 (or lid and/or nozzle), sidewalls 108 and/or bottom 110 may include the multi-layer coating.
  • An outer liner 116 may be disposed adjacent the sidewalls 108 to protect the chamber body 102 .
  • the outer liner 116 may be fabricated and/or coated with a multi-layer coating.
  • An exhaust port 126 may be defined in the chamber body 102 , and may couple the interior volume 106 to a pump system 128 .
  • the pump system 128 may include one or more pumps and throttle valves utilized to evacuate and regulate the pressure of the interior volume 106 of the processing chamber 100 .
  • the showerhead 130 may be supported on the sidewall 108 of the chamber body 102 .
  • the showerhead 130 (or lid) may be opened to allow access to the interior volume 106 of the processing chamber 100 , and may provide a seal for the processing chamber 100 while closed.
  • a gas panel 158 may be coupled to the processing chamber 100 to provide process and/or cleaning gases to the interior volume 106 through the showerhead 130 or lid and nozzle.
  • showerhead 130 is used for processing chambers used for dielectric etch (etching of dielectric materials).
  • the showerhead 130 includes a gas distribution plate (GDP) 133 having multiple gas delivery holes 132 throughout the GDP 133 .
  • the showerhead 130 may include the GDP 133 bonded to an aluminum base or an anodized aluminum base.
  • the GDP 133 may be made from Si or SiC, or may be a ceramic such as Y 2 O 3 , Al 2 O 3 , YAG, and so forth.
  • a lid may be used rather than a showerhead.
  • the lid may include a center nozzle that fits into a center hole of the lid.
  • the lid may be a ceramic such as Al 2 O 3 , Y 2 O 3 , YAG, or a ceramic compound comprising Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 —ZrO 2 .
  • the nozzle may also be a ceramic, such as Y 2 O 3 , YAG, or the ceramic compound comprising Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 —ZrO 2 .
  • the lid, showerhead base 104 , GDP 133 and/or nozzle may all be coated with a multi-layer coating according to an embodiment.
  • processing gases that may be used to process substrates in the processing chamber 100 include halogen-containing gases, such as C 2 F 6 , SF 6 , SiCl 4 , HBr, NF 3 , CF 4 , CHF 3 , CH 2 F 3 , F, NF 3 , Cl 2 , CCl 4 , BCl 3 and SiF 4 , among others, and other gases such as O 2 , or N 2 O.
  • carrier gases include N 2 , He, Ar, and other gases inert to process gases (e.g., non-reactive gases).
  • the substrate support assembly 148 is disposed in the interior volume 106 of the processing chamber 100 below the showerhead 130 or lid.
  • the substrate support assembly 148 holds the substrate 144 during processing.
  • a ring 146 (e.g., a single ring) may cover a portion of the electrostatic chuck 150 , and may protect the covered portion from exposure to plasma during processing.
  • the ring 146 may be silicon or quartz in one embodiment.
  • An inner liner 118 may be coated on the periphery of the substrate support assembly 148 .
  • the inner liner 118 may be a halogen-containing gas resistant material such as those discussed with reference to the outer liner 116 .
  • the inner liner 118 may be fabricated from the same materials as those of outer liner 116 . Additionally, the inner liner 118 may also be coated with a multi-layer coating.
  • the substrate support assembly 148 includes a mounting plate 162 supporting a pedestal 152 , and an electrostatic chuck 150 .
  • the electrostatic chuck 150 further includes a thermally conductive base 164 and an electrostatic puck 166 bonded to the thermally conductive base by a bond 138 , which may be a silicone bond in one embodiment.
  • An upper surface of the electrostatic puck 166 may be covered by the multi-layer coating 136 in the illustrated embodiment.
  • the multi-layer coating 136 may be disposed on the entire exposed surface of the electrostatic chuck 150 including the outer and side periphery of the thermally conductive base 164 and the electrostatic puck 166 as well as any other geometrically complex parts or holes having large aspect ratios in the electrostatic chuck.
  • the mounting plate 162 is coupled to the bottom 110 of the chamber body 102 and includes passages for routing utilities (e.g., fluids, power lines, sensor leads, etc.) to the thermally conductive base 164 and the electrostatic puck 166 .
  • the thermally conductive base 164 and/or electrostatic puck 166 may include one or more optional embedded heating elements 176 , embedded thermal isolators 174 and/or conduits 168 , 170 to control a lateral temperature profile of the substrate support assembly 148 .
  • the conduits 168 , 170 may be fluidly coupled to a fluid source 172 that circulates a temperature regulating fluid through the conduits 168 , 170 .
  • the embedded isolator 174 may be disposed between the conduits 168 , 170 in one embodiment.
  • the heater 176 is regulated by a heater power source 178 .
  • the conduits 168 , 170 and heater 176 may be utilized to control the temperature of the thermally conductive base 164 .
  • the conduits and heater heat and/or cool the electrostatic puck 166 and a substrate (e.g., a wafer) 144 being processed.
  • the temperature of the electrostatic puck 166 and the thermally conductive base 164 may be monitored using a plurality of temperature sensors 190 , 192 , which may be monitored using a controller 195 .
  • the electrostatic puck 166 may further include multiple gas passages such as grooves, mesas and other surface features that may be formed in an upper surface of the puck 166 . These surface features may all be coated with a multi-layer coating according to an embodiment.
  • the gas passages may be fluidly coupled to a source of a heat transfer (or backside) gas such as He via holes drilled in the puck 166 . In operation, the backside gas may be provided at controlled pressure into the gas passages to enhance the heat transfer between the electrostatic puck 166 and the substrate 144 .
  • the electrostatic puck 166 includes at least one clamping electrode 180 controlled by a chucking power source 182 .
  • the electrode 180 (or other electrode disposed in the puck 166 or base 164 ) may further be coupled to one or more RF power sources 184 , 186 through a matching circuit 188 for maintaining a plasma formed from process and/or other gases within the processing chamber 100 .
  • the sources 184 , 186 are generally capable of producing RF signal having a frequency from about 50 kHz to about 3 GHz and a power of up to about 10,000 Watts.
  • FIG. 2 depicts a deposition process in accordance with a variety of ALD techniques.
  • ALD processes exist and the specific type may be selected based on several factors such as the surface to be coated, the coating material, chemical interaction between the surface and the coating material, etc.
  • the general principle of an ALD process comprises growing or depositing a thin film layer by repeatedly exposing the surface to be coated to sequential alternating pulses of gaseous chemical precursors that chemically react with the surface one at a time in a self-limiting manner.
  • FIG. 2 illustrates an article 210 having a surface 205 .
  • Each individual chemical reaction between a precursor and the surface is known as a “half-reaction.”
  • a precursor is pulsed onto the surface for a period of time sufficient to allow the precursor to fully react with the surface.
  • the reaction is self-limiting as the precursor will react with a finite number of available reactive sites on the surface, forming a uniform continuous adsorption layer on the surface. Any sites that have already reacted with a precursor will become unavailable for further reaction with the same precursor unless and/or until the reacted sites are subjected to a treatment that will form new reactive sites on the uniform continuous coating.
  • Exemplary treatments may be plasma treatment, treatment by exposing the uniform continuous adsorption layer to radicals, or introduction of a different precursor able to react with the most recent uniform continuous film layer adsorbed to the surface.
  • article 210 having surface 205 may be introduced to a first precursor 260 for a first duration until a first half reaction of the first precursor 260 with surface 205 partially forms film layer 215 by forming an adsorption layer 214 . Subsequently, article 210 may be introduced to a second precursor 265 (also referred to as a reactant) that reacts with the adsorption layer 214 to fully form the layer 215 .
  • the first precursor 260 may be a precursor for yttrium or another metal, for example.
  • the second precursor 265 may be an oxygen precursor if the layer 215 is an oxide, a fluorine precursor if the layer 215 is a fluoride, or a nitrogen precursor if this layer is a nitride.
  • the article 210 may alternately be exposed to the first precursor 260 and second precursor 265 up to n number of times to achieve a target thickness for the layer 215 .
  • N may be an integer from 1 to 100, for example.
  • Film layer 215 may be uniform, continuous and conformal. The film layer 215 may also have a very low porosity of less than 1% in embodiments, less than 0.1% in some embodiments, or approximately 0% in further embodiments.
  • article 210 having surface 205 and film layer 215 may be introduced to a third precursor 270 that reacts with layer 215 to partially form a second film layer 220 by forming a second adsorption layer 218 .
  • article 210 may be introduced to another precursor 275 (also referred to as a reactant) that reacts with adsorption layer 218 leading to a second half reaction to fully form the layer 220 .
  • the article 210 may alternately be exposed to the third precursor 270 and fourth precursor 275 up to m number of times to achieve a target thickness for the layer 220 .
  • M may be an integer from 1 to 100, for example.
  • the second film layer 220 may be uniform, continuous and conformal.
  • the second film layer 220 may also have a very low porosity of less than 1% in some embodiments, less than 0.1% in some embodiments, or approximately 0% in further embodiments.
  • the sequence of introducing the article 210 to precursors 260 and 265 n number of times and then to precursors 270 and 275 m number of times may be repeated and performed x number of times.
  • X may be an integer from 1 to 100, for example.
  • a result of the sequence may be to grow additional layers 225 , 230 , 235 , and 245 .
  • the number and thickness of the various layers may be independently selected based on the targeted coating thickness and properties.
  • the various layers may remain intact (i.e. separate) or in some embodiments may be interdiffused.
  • the surface reactions are done sequentially.
  • the chamber in which the ALD process takes place may be purged with an inert carrier gas (such as nitrogen or air) to remove any unreacted precursors and/or surface-precursor reaction byproducts.
  • an inert carrier gas such as nitrogen or air
  • At least two precursors are used. In some embodiments, more than two precursors may be used to grow film layers having the same composition (e.g., to grow multiple layers of Y 2 O 3 on top of each other). In other embodiments, different precursors may be used to grow different film layers having different compositions.
  • ALD processes may be conducted at various temperatures.
  • the optimal temperature range for a particular ALD process is referred to as the “ALD temperature window.” Temperatures below the ALD temperature window may result in poor growth rates and non-ALD type deposition. Temperatures above the ALD temperature window may result in thermal decomposition of the article or rapid desorption of the precursor.
  • the ALD temperature window may range from about 200° C. to about 400° C. In some embodiments, the ALD temperature window is between about 150° C. to about 350° C.
  • the ALD process allows for conformal film layers having uniform film thickness on articles and surfaces having complex geometric shapes, holes with large aspect ratios, and three-dimensional structures. Sufficient exposure time of the precursors to the surface enables the precursors to disperse and fully react with the surface in its entirety, including all of its three-dimensional complex features.
  • the exposure time utilized to obtain conformal ALD in high aspect ratio structures is proportionate to the square of the aspect ratio and can be predicted using modeling techniques.
  • the ALD technique is advantageous over other commonly used coating techniques because it allows in-situ on demand material synthesis of a particular composition or formulation without the need for a lengthy and difficult fabrication of source materials (such as powder feedstock and sintered targets).
  • a first set of layers 215 , 220 , 225 , and 230 may together form a diffusion barrier layer selected from a group consisting of TiN x , TaN x , Zr 3 N 4 , and TiZr x N y in some embodiments.
  • the diffusion barrier layers may be deposited from one pair of ALD precursors or from alternating pairs of ALD precursors used for forming, for example, a TiN film, TaN film, and a Zr 3 N 4 film.
  • the films formed from alternating precursors may remain as intact layers.
  • the films formed from alternating precursors may be annealed to form an interdiffused diffusion barrier layer.
  • each of the layers 215 , 220 , 225 , and 230 is a nanolayer of the same material (e.g., of TiN x , TaN x or Zr 3 N 4 ) that together forms a single thicker diffusion barrier layer.
  • a second set of layers 235 and 245 may together form an erosion resistant layer selected from a group consisting of YF 3 , Y 2 O 3 , Er 2 O 3 , Al 2 O 3 , ZrO 2 , ErAl x O y , YO x F y , YAl x O y , YZr x O y and YZr x Al y O z .
  • the erosion resistant layer may be deposited from one pair of ALD precursors or from alternating pairs of ALD precursors used for forming, for example, an Al 2 O 3 film, Y 2 O 3 film, ZrO 2 film, YF 3 film, and/or an Er 2 O 3 film.
  • the films formed from alternating precursors may remain as intact layers. In other embodiments, the films formed from alternating precursors may be annealed to form an interdiffused erosion resistant layer.
  • each of the layers 235 and 245 is a nanolayer of the same material (e.g., of Al 2 O 3 , Y 2 O 3 , ZrO 2 , YF 3 , or Er 2 O 3 ) that together forms a single thicker erosion resistant layer.
  • the multi-layer coating may be deposited on a surface of an article via CVD.
  • An exemplary CVD system is illustrated in FIG. 3 .
  • the system comprises a chemical vapor precursor supply system 305 and a CVD reactor 310 .
  • the role of the vapor precursor supply system 305 is to generate vapor precursors 320 from a starting material 315 , which could be in a solid, liquid, or gas form.
  • the vapors are then transported into CVD reactor 310 and get deposited as thin film 325 on article 330 which is positioned on article holder 335 .
  • CVD reactor 310 heats article 330 to a deposition temperature using heater 340 .
  • the heater may heat the CVD reactor's wall (also known as “hot-wall reactor”) and the reactor's wall may transfer heat to the article.
  • the article alone may be heated while maintaining the CVD reactor's wall cold (also known as “cold-wall reactor”).
  • the CVD system configuration should not be construed as limiting. A variety of equipment could be utilized for a CVD system and the equipment is chosen to obtain optimum processing conditions that may give a coating with uniform thickness, surface morphology, structure, and composition.
  • the various CVD processes comprise of the following process: (1) generate active gaseous reactant species (also known as “precursors”) from the starting material; (2) transport the precursors into the reaction chamber (also referred to as “reactor”); (3) absorb the precursors onto the heated article; (4) participate in a chemical reaction between the precursor and the article at the gas-solid interface to form a deposit and a gaseous by-product; and (5) remove the gaseous by-product and unreacted gaseous precursors from the reaction chamber.
  • active gaseous reactant species also known as “precursors”
  • Suitable CVD precursors may be stable at room temperature, may have low vaporization temperature, can generate vapor that is stable at low temperature, have suitable deposition rate (low deposition rate for thin film coatings and high deposition rate for thick film coatings), relatively low toxicity, be cost effective, and relatively pure.
  • suitable deposition rate low deposition rate for thin film coatings and high deposition rate for thick film coatings
  • a chemical precursor alone may suffice to complete the deposition.
  • other agents listed in addition to a chemical precursor may be utilized to complete the deposition.
  • CVD has many advantages including its capability to deposit highly dense and pure coatings and its ability to produce uniform films with good reproducibility and adhesion at reasonably high deposition rates.
  • Layers deposited using CVD in embodiments may have a porosity of below 1%, and a porosity of below 0.1% (e.g., around 0%). Therefore, it can be used to uniformly coat complex shaped components and deposit conformal films with good conformal coverage (e.g., with substantially uniform thickness).
  • CVD may also be utilized to deposit a film made of a plurality of components, for example, by feeding a plurality of chemical precursors at a predetermined ratio into a mixing chamber and then supplying the mixture to the CVD reactor system.
  • the CVD reactor 310 may be used to form a diffusion barrier layer and/or an erosion resistant layer that is resistant to erosion and/or corrosion by plasma environments in embodiments.
  • Layer 325 may form a diffusion barrier layer selected from a group consisting of TiN x , TaN x , Zr 3 N 4 , and TiZr x N y in embodiments.
  • Layer 345 covering diffusion barrier layer 325 may be an erosion resistant layer selected from a group consisting of YF 3 , Y 2 O 3 , Er 2 O 3 , Al 2 O 3 , ZrO 2 , ErAl x O y , YO x F y , YAl x O y , YZr x O y and YZr x Al y O z , in some embodiments.
  • the multi-layer coating may be deposited on a surface of an article via PVD.
  • PVD processes may be used to deposit thin films with thicknesses ranging from a few nanometers to several micrometers.
  • the various PVD processes share three fundamental features in common: (1) evaporating the material from a solid source with the assistance of high temperature or gaseous plasma; (2) transporting the vaporized material in vacuum to the article's surface; and (3) condensing the vaporized material onto the article to generate a thin film layer.
  • An illustrative PVD reactor is depicted in FIG. 4 and discussed in more detail below.
  • FIG. 4 depicts a deposition mechanism applicable to a variety of PVD techniques and reactors.
  • PVD reactor chamber 400 may comprise a plate 410 adjacent to the article 420 and a plate 415 adjacent to the target 430 . Air may be removed from reactor chamber 400 , creating a vacuum. Then argon gas may be introduced into the reactor chamber, voltage may be applied to the plates, and a plasma comprising electrons and positive argon ions 440 may be generated. Positive argon ions 440 may be attracted to negative plate 415 where they may hit target 430 and release atoms 435 from the target. Released atoms 435 may get transported and deposited as a thin film 425 onto article 420 .
  • the PVD reactor chamber 400 may be used to form a diffusion barrier layer and/or an erosion resistant layer in embodiments.
  • Layer 425 may form a diffusion barrier layer selected from a group consisting of TiN x , TaN x , Zr 3 N 4 , and TiZr x N y in embodiments.
  • Layer 445 covering diffusion barrier layer 425 may be an erosion resistant layer selected from a group consisting of YF 3 , Y 2 O 3 , Er 2 O 3 , Al 2 O 3 , ZrO 2 , ErAl x O y , YO x F y , YAl x O y , YZr x O y and YZr x Al y O z , in some embodiments.
  • Article 210 in FIG. 2 , article 330 in FIG. 3 , and article 420 in FIG. 4 may represent various semiconductor process chamber components including but not limited to substrate support assembly, an electrostatic chuck (ESC), a ring (e.g., a process kit ring or single ring), a chamber wall, a base, a gas distribution plate, gas lines, a showerhead, a nozzle, a lid, a liner, a liner kit, a shield, a plasma screen, a flow equalizer, a cooling base, a chamber viewport, a chamber lid, and so on.
  • ESC electrostatic chuck
  • a ring e.g., a process kit ring or single ring
  • a chamber wall e.g., a process kit ring or single ring
  • a base e.g., a process kit ring or single ring
  • gas distribution plate gas lines
  • gas lines gas lines
  • showerhead a showerhead
  • nozzle nozzle
  • lid a
  • the articles and their surfaces may be made from a metal (such as aluminum, stainless steel), a ceramic, a metal-ceramic composite, a polymer, a polymer ceramic composite, or other suitable materials, and may further comprise materials such as AN, Si, SiC, Al 2 O 3 , SiO 2 , and so on.
  • diffusion barrier films such as TiN x , TaN x , Zr 3 N 4 , and TiZr x N y
  • erosion resistant films such as YF 3 , Y 2 O 3 , Er 2 O 3 , Al 2 O 3 , ZrO 2 , ErAl x O y , YO x F y , YAl x O y , YZr x O y and YZr x Al y O z
  • the diffusion barrier layer and the erosion resistant layer may both be deposited using the same technique, i.e.
  • both may deposited via ALD, both may be deposited via CVD, or both may be deposited via PVD.
  • the diffusion barrier layer may be deposited by one technique and the erosion resistant layer may be deposited by another technique. If both layers are deposited via ALD, for example, the diffusion barrier layer may be adsorbed and deposited by proper sequencing of the precursors used to adsorb and deposit TiN, TaN, and Zr 3 N 4 , and the erosion resistant films may be adsorbed and deposited by proper sequencing of the precursors used to adsorb and deposit Y 2 O 3 , Al 2 O 3 , YF 3 , ZrO 2 , and Er 2 O 3 , as discussed in more detail below.
  • FIG. 5 illustrates a method 500 for forming a multi-layer coating on an article according to an embodiment.
  • the method may optionally begin by selecting a composition for the multi-layer coating (not illustrated in FIG. 5 ).
  • the composition selection and method of forming may be performed by the same entity or by multiple entities.
  • the method comprises depositing a diffusion barrier layer onto a surface of an article using a first deposition process selected from a group consisting of ALD, CVD, and PVD.
  • the diffusion barrier layer may comprise a plurality of intact layers.
  • the plurality of intact layers may be made out of a plurality of precursors, forming a diffusion barrier layer.
  • the diffusion barrier layer may have a thickness ranging from about 10 nm to about 100 nm and may be selected from a group consisting of TiN x , TaN x , Zr 3 N 4 , and TiZr x N y .
  • the method optionally further comprise annealing the diffusion barrier layer.
  • the annealing may result in a diffusion barrier layer comprising an interdiffused solid state phase of the plurality of components present in the plurality of intact layers.
  • Annealing may be performed at a temperature ranging from about 800° C. to about 1800° C., from about 800° C. to about 1500° C., or from about 800° C. to about 1000° C.
  • the annealing temperature may be selected based on the material of construction of the article, surface, and film layers so as to maintain their integrity and refrain from deforming, decomposing, or melting any or all of these components.
  • the method further comprises depositing an erosion resistant layer onto the diffusion barrier layer using a second deposition process selected from a group consisting of ALD, CVD, and PVD.
  • the erosion resistant layer may comprise a plurality of intact layers.
  • the plurality of intact layers may be made out of a plurality of precursors, forming an erosion resistant layer.
  • the erosion resistant layer may have a thickness of up to about 1 micrometer, e.g.
  • the method may optionally further comprise annealing the erosion resistant layer, pursuant to block 520 .
  • the annealing may result in an erosion resistant layer comprising an interdiffused solid state phase of the plurality of components present in the plurality of intact layers.
  • the annealing temperature may be similar to the annealing temperature of the diffusion barrier layer listed above.
  • the barrier layer and the erosion resistant layer may both be annealed and interdiffused ( FIG. 6D ).
  • a single annealing process is performed after deposition of the erosion resistant layer to anneal and interdiffuse nanolayers of the diffusion barrier layer and nanolayers of the erosion resistant layer.
  • one of the barrier layer and the erosion resistant layer are annealed and interdiffused, while the other layer is not annealed. (See FIG. 6B and FIG. 6C ).
  • neither of the barrier layer or the erosion resistant layer is annealed or interdiffused ( FIG. 6A ). The various embodiments are illustrated in FIGS. 6A-6D and discussed in further detail below.
  • the first deposition process of the diffusion barrier layer and the second deposition process of the erosion resistant layer may be identical, for example, both processes may be ALD, both process may be CVD, or both processes may be PVD. In other embodiments, the first deposition process of the diffusion barrier layer and the second deposition process of the erosion resistant layer may vary. Regardless of the deposition method, the final multi-layer coating may be able to withstand temperature cycling from about 20° C. to about 450° C. without cracking.
  • a proper precursor or a plurality of precursors may be selected to ultimately form the diffusion barrier layer(s), erosion resistant layer(s), and multi-layer coating.
  • a TiN x diffusion barrier layer may be deposited via ALD or CVD from at least one Ti-containing precursor selected from the group consisting of bis(diethylamido)bis(dimethylamido)titanium(IV), tetrakis(diethylamido)titanium(IV), tetrakis(dimethylamido)titanium(IV), tetrakis(ethylmethylamido)titanium(IV), titanium(IV) bromide, titanium(IV) chloride, and titanium(IV) tert-butoxide.
  • Ti-containing precursor selected from the group consisting of bis(diethylamido)bis(dimethylamido)titanium(IV), tetrakis(diethylamido)titanium(IV), tetrakis(dimethylamido)titanium(IV), tetrakis(ethylmethylamido)titanium(IV
  • a TaN x diffusion barrier layer may be deposited via ALD or CVD from at least one Ta precursor selected from the group consisting of pentakis(dimethylamido)tantalum(V), tantalum(V) chloride, tantalum(V) ethoxide, and tris(diethylamino)(tert-butylimido)tantalum(V).
  • a TiZr x N y diffusion barrier layer may be deposited via ALD or CVD from at least one Ti precursor and from at least one Zr precursor.
  • Ti precursors may be selected from the group consisting of bis(diethylamido)bis(dimethylamido)titanium(IV), tetrakis(diethylamido)titanium(IV), tetrakis(dimethylamido)titanium(IV), tetrakis(ethylmethylamido)titanium(IV), titanium(IV) bromide, titanium(IV) chloride, and titanium(IV) tert-butoxide.
  • Zr precursors may be selected from the group consisting of zirconium (IV) bromide, zirconium (IV) chloride, zirconium (IV) tert-butoxide, tetrakis(diethylamido)zirconium (IV), tetrakis(dimethylamido)zirconium (IV), and tetrakis(ethylmethylamido)zirconium (IV).
  • the stoichiometric ratios of the various components may form a Ti 0.2 Zr 0.2 N 0.6 diffusion barrier layer.
  • a Zr 3 N 4 diffusion barrier layer may be deposited via ALD or CVD from at least one Zr precursor selected from the group consisting of zirconium (IV) bromide, zirconium (IV) chloride, zirconium (IV) tert-butoxide, tetrakis(diethylamido)zirconium (IV), tetrakis(dimethylamido)zirconium (IV), and tetrakis(ethylmethylamido)zirconium (IV).
  • Zr precursor selected from the group consisting of zirconium (IV) bromide, zirconium (IV) chloride, zirconium (IV) tert-butoxide, tetrakis(diethylamido)zirconium (IV), tetrakis(dimethylamido)zirconium (IV), and tetrakis(ethylmethylamido)zirconium (IV).
  • a ErAl x O y erosion resistant layer may be deposited via ALD or CVD from at least one Er precursor and from at least one Al precursor.
  • Er precursors may be selected from a group consisting of tris-methylcyclopentadienyl erbium (III) (Er(MeCp) 3 ), erbium boranamide (Er(BA) 3 ), Er(TMHD) 3 , erbium(III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate), and tris(butylcyclopentadienyl)erbium(III).
  • Al precursors may be selected from the group consisting of diethylaluminum ethoxide, tris(ethylmethylamido)aluminum, aluminum sec-butoxide, aluminum tribromide, aluminum trichloride, triethylaluminum, triisobutylaluminum, trimethylaluminum, and tris(diethylamido)aluminum.
  • a YAl x O y erosion resistant layer may be deposited via ALD or CVD from at least one Y precursor and from at least one Al precursor.
  • a YZr x O y erosion resistant layer may be deposited via ALD or CVD from at least one Y precursor and from at least one Zr precursor.
  • Zr precursors may be selected from the group consisting of zirconium (IV) bromide, zirconium (IV) chloride, zirconium (IV) tert-butoxide, tetrakis(diethylamido)zirconium (IV), tetrakis(dimethylamido)zirconium (IV), and tetrakis(ethylmethylamido)zirconium (IV).
  • a YZr x Al y O z erosion resistant layer may be deposited via ALD or CVD from at least one Y precursor, from at least one Zr precursor and from at least one Al precursor.
  • An Er 2 O 3 erosion resistant layer may be deposited via ALD or CVD from at least one Er precursor selected from a group consisting of tris-methylcyclopentadienyl erbium (III) (Er(MeCp) 3 ), erbium boranamide (Er(BA) 3 ), Er(TMHD) 3 , erbium(III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate), and tris(butylcyclopentadienyl)erbium(III).
  • Er precursor selected from a group consisting of tris-methylcyclopentadienyl erbium (III) (Er(MeCp) 3 ), erbium boranamide (Er(BA) 3 ), Er(TMHD) 3 , erbium(III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate), and tris(butylcyclopentadienyl)erbium(
  • An Al 2 O 3 erosion resistant layer may be deposited via ALD or CVD from at least one Al precursor selected from the group consisting of diethylaluminum ethoxide, tris(ethylmethylamido)aluminum, aluminum sec-butoxide, aluminum tribromide, aluminum trichloride, triethylaluminum, triisobutylaluminum, trimethylaluminum, and tris(diethylamido)aluminum.
  • Al precursor selected from the group consisting of diethylaluminum ethoxide, tris(ethylmethylamido)aluminum, aluminum sec-butoxide, aluminum tribromide, aluminum trichloride, triethylaluminum, triisobutylaluminum, trimethylaluminum, and tris(diethylamido)aluminum.
  • a YF 3 erosion resistant layer may be deposited via ALD or CVD from at least one Y precursor.
  • a ZrO 2 erosion resistant layer may be deposited via ALD or CVD from at least one Zr precursor selected from the group consisting of zirconium (IV) bromide, zirconium (IV) chloride, zirconium (IV) tert-butoxide, tetrakis(diethylamido)zirconium (IV), tetrakis(dimethylamido)zirconium (IV), and tetrakis(ethylmethylamido)zirconium (IV).
  • Zr precursor selected from the group consisting of zirconium (IV) bromide, zirconium (IV) chloride, zirconium (IV) tert-butoxide, tetrakis(diethylamido)zirconium (IV), tetrakis(dimethylamido)zirconium (IV), and tetrakis(ethylmethylamido)zirconium (IV).
  • precursor gases providing an oxygen source such as ozone, water vapor, and oxygen radicals from plasma may be used in conjunction with any of the precursors listed herein above.
  • precursor gases providing a nitrogen source such as ammonia, nitrogen, and radicals from nitrogen plasma may be used in conjunction with any of the precursors listed herein above.
  • precursor gases providing a fluorine source such as fluorine, HF, and fluorine radicals from a fluorine plasma may be used in conjunction with any of the precursors listed herein above. It is to be understood that the precursors listed herein above are merely illustrative and should not be construed as limiting.
  • FIGS. 6A-6D depict variations of a multi-layer coating according to different embodiments.
  • FIG. 6A illustrates a multi-layer coating for an article 610 having a surface 605 .
  • article 610 may include various semiconductor process chamber components including but not limited to substrate support assembly, an electrostatic chuck (ESC), a ring (e.g., a process kit ring or single ring), a chamber wall, a base, a gas distribution plate, gas lines, a showerhead, a nozzle, a lid, a liner, a liner kit, a shield, a plasma screen, a flow equalizer, a cooling base, a chamber viewport, a chamber lid, and so on.
  • ESC electrostatic chuck
  • a ring e.g., a process kit ring or single ring
  • a chamber wall e.g., a process kit ring or single ring
  • base e.g., a process kit ring or single ring
  • gas distribution plate gas
  • the semiconductor process chamber component may be made from a metal (such as aluminum, stainless steel), a ceramic, a metal-ceramic composite, a polymer, a polymer ceramic composite, or other suitable materials, and may further comprise materials such as AN, Si, SiC, Al 2 O 3 , SiO 2 , and so on.
  • the multi-layer coating deposited on surface 605 comprises a diffusion barrier layer 615 or 645 selected from a group consisting of TiN x , TaN x , Zr 3 N 4 , and TiZr x N y and an erosion resistant layer 625 or 635 selected from a group consisting of YF 3 , Y 2 O 3 , Er 2 O 3 , Al 2 O 3 , ZrO 2 , ErAl x O y , YO x F y , YAl x O y , YZr x O y and YZr x Al y O z .
  • the erosion resistant layer covers the diffusion barrier layer.
  • both diffusion barrier layer 615 and erosion resistant layer 625 comprise a plurality of intact layers 650 and 630 , respectively.
  • diffusion barrier layer 615 comprises a plurality of intact layers 650
  • erosion resistant layer 635 may be in an interdiffused solid state phase of the plurality of components composing the erosion resistant layer.
  • diffusion barrier layer 645 may be in an interdiffused solid state phase of the plurality of components composing the diffusion barrier layer
  • erosion resistant layer 625 may comprise a plurality of intact layers.
  • both diffusion barrier layer 645 and erosion resistant layer 635 may be in an inter-diffused solid state phase of the plurality of components composing each of the layers.
  • the components of the diffusion barrier layer 645 may interdiffuse to form multiple different phases and/or the components of the erosion resistant layer 635 may interdiffuse to form multiple different phases.
  • the diffusion barrier layer and the erosion resistant layer illustrated in FIGS. 6A-6D may seem as having a similar thickness, these figures should not be construed as limiting.
  • the diffusion barrier layer may have a lesser thickness than the erosion resistant layer.
  • the diffusion barrier layer may have a greater thickness than the erosion resistant layer.
  • the thickness of the diffusion barrier layer and of the erosion resistant layer may be the same.
  • the diffusion barrier layer may have a thickness ranging from about 10 nm to about 100 nm.
  • the erosion resistant layer may have a thickness of up to about 1 micrometer, e.g., from about 20 nm to about 1 micrometer.
  • the surface roughness of the multi-layer coating may be similar to the roughness of the semiconductor process chamber component. In some embodiments, the surface roughness of the multi-layer coating may range from about 20 to about 45 microinches.
  • An aluminum oxide erosion resistant layer deposited by ALD may have the following properties: a breakdown voltage of about 360 volts at a thickness of about 1 micrometer, a scratch adhesion failure force based on a 10 micron diamond stylus scratch adhesion test of about 140 mN at a thickness of about 1 micrometer, a Vickers hardness of about 12.9-13.5 GPa, and a time to failure of about 1-28 hours for a one micron thick film based on a bubble test.
  • a yttrium oxide erosion resistant layer deposited by ALD may have the following properties: a breakdown voltage of about 475 volts at a thickness of about 1 micrometer, a scratch adhesion failure force based on a 10 micrometer diamond stylus scratch adhesion test of 34 mN at a thickness of about 100 nm, a Vickers hardness of about 11.5 GPa to about 12.9 GPa, and about 14 minutes time to failure for a one micrometer film based on a bubble test.
  • porosity When the term “porosity” is used herein, it is intended to describe the amount of empty space within the coating. For example, a 5% porosity would mean that 5% of the total volume of the coating is actually empty space.
  • surface roughness When the term “surface roughness” is used herein, it described a measure of the roughness of a surface using a profilometer (a needle dragged across the surface).
  • break down voltage or “BDV”
  • BDV break down voltage
  • adheresion refers to the strength of the coating to adhere to an underlying article or underlying coating.
  • hardness refers to the amount of compression that a film can withstand without damage.
  • bubble test refers to a test in which the coated article is placed in hydrochloric acid solution, and the time until the formation of a bubble on the liquid is measured. The formation of the bubble indicates that the article itself has reacted and the coating has been penetrated.
  • the ability to withstand the temperature cycling means that the multi-layer coating can be processed through temperature cycles without experiencing cracking.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
US15/646,602 2016-07-15 2017-07-11 Multi-layer coating with diffusion barrier layer and erosion resistant layer Abandoned US20180016678A1 (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
US15/646,602 US20180016678A1 (en) 2016-07-15 2017-07-11 Multi-layer coating with diffusion barrier layer and erosion resistant layer
KR1020187004122A KR102481924B1 (ko) 2016-07-15 2017-07-14 확산 장벽 층 및 내침식성 층을 갖는 다층 코팅
TW107101620A TW201827626A (zh) 2016-07-15 2017-07-14 具擴散阻障層及抗侵蝕層的多層塗層
JP2018503240A JP7053452B2 (ja) 2016-07-15 2017-07-14 拡散障壁層及び浸食防止層を有する多層コーティング
PCT/US2017/042110 WO2018013909A1 (en) 2016-07-15 2017-07-14 Multi-layer coating with diffusion barrier layer and erosion resistant layer
TW106123559A TW201823487A (zh) 2016-07-15 2017-07-14 具擴散阻障層及抗侵蝕層的多層塗層
CN201780002518.0A CN107849704A (zh) 2016-07-15 2017-07-14 具扩散阻障层及抗侵蚀层的多层涂层
CN201810637499.5A CN108531907A (zh) 2016-07-15 2017-07-14 具扩散阻障层及抗侵蚀层的多层涂层
KR1020197005973A KR102481950B1 (ko) 2016-07-15 2017-07-14 확산 장벽 층 및 내침식성 층을 갖는 다층 코팅
US15/844,335 US11008653B2 (en) 2016-07-15 2017-12-15 Multi-layer coating with diffusion barrier layer and erosion resistant layer
JP2019135023A JP7048544B2 (ja) 2016-07-15 2019-07-23 拡散障壁層及び浸食防止層を有する多層コーティング

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662362936P 2016-07-15 2016-07-15
US15/646,602 US20180016678A1 (en) 2016-07-15 2017-07-11 Multi-layer coating with diffusion barrier layer and erosion resistant layer

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US15/844,335 Continuation US11008653B2 (en) 2016-07-15 2017-12-15 Multi-layer coating with diffusion barrier layer and erosion resistant layer

Publications (1)

Publication Number Publication Date
US20180016678A1 true US20180016678A1 (en) 2018-01-18

Family

ID=60941682

Family Applications (2)

Application Number Title Priority Date Filing Date
US15/646,602 Abandoned US20180016678A1 (en) 2016-07-15 2017-07-11 Multi-layer coating with diffusion barrier layer and erosion resistant layer
US15/844,335 Active 2038-09-02 US11008653B2 (en) 2016-07-15 2017-12-15 Multi-layer coating with diffusion barrier layer and erosion resistant layer

Family Applications After (1)

Application Number Title Priority Date Filing Date
US15/844,335 Active 2038-09-02 US11008653B2 (en) 2016-07-15 2017-12-15 Multi-layer coating with diffusion barrier layer and erosion resistant layer

Country Status (6)

Country Link
US (2) US20180016678A1 (enExample)
JP (2) JP7053452B2 (enExample)
KR (2) KR102481924B1 (enExample)
CN (2) CN107849704A (enExample)
TW (2) TW201827626A (enExample)
WO (1) WO2018013909A1 (enExample)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180094348A1 (en) * 2016-06-23 2018-04-05 Applied Materials, Inc. Non-Line of Sight Deposition of Erbium Based Plasma Resistant Ceramic Coating
US20190067012A1 (en) * 2017-08-31 2019-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
US20190185999A1 (en) * 2017-12-15 2019-06-20 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
CN112053929A (zh) * 2019-06-06 2020-12-08 中微半导体设备(上海)股份有限公司 用于等离子体腔室内部的部件及其制作方法
US10858741B2 (en) 2019-03-11 2020-12-08 Applied Materials, Inc. Plasma resistant multi-layer architecture for high aspect ratio parts
KR20210097211A (ko) * 2019-03-04 2021-08-06 어플라이드 머티어리얼스, 인코포레이티드 챔버 부품 보호용 옥시-플루오라이드 화합물들
US11118263B2 (en) * 2019-05-10 2021-09-14 Applied Materials, Inc. Method for forming a protective coating film for halide plasma resistance
US20220130705A1 (en) * 2019-02-22 2022-04-28 Lam Research Corporation Electrostatic chuck with powder coating
US11332408B2 (en) * 2019-04-01 2022-05-17 China Nonferrous Metals (Guinlin) Geology And Mining Co., Ltd. Al2O3—ZrO2—Y2O3—TiN nanocomposite ceramic powder and preparation method thereof
US11402245B2 (en) 2019-08-13 2022-08-02 Rosemount Aerospace Inc. Air data probe corrosion protection
US11430918B2 (en) * 2017-11-13 2022-08-30 Xiamen San'an Optoelectronics Co., Ltd. Semiconductor device and light-emitting system
US20220277936A1 (en) * 2019-08-09 2022-09-01 Applied Materials, Inc. Protective multilayer coating for processing chamber components
US11562890B2 (en) 2018-12-06 2023-01-24 Applied Materials, Inc. Corrosion resistant ground shield of processing chamber
US11761079B2 (en) 2017-12-07 2023-09-19 Lam Research Corporation Oxidation resistant protective layer in chamber conditioning
EP4073831A4 (en) * 2019-12-09 2024-01-10 Entegris, Inc. DIFFUSION BARRIERS MADE OF MULTIPLE BARRIER MATERIALS, AND ASSOCIATED ARTICLES AND METHODS
US11920239B2 (en) 2015-03-26 2024-03-05 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
US12270104B2 (en) 2021-03-19 2025-04-08 Entegris, Inc. Substrate with fluorinated yttrium coatings, and methods of preparing and using the substrates
US12371781B2 (en) 2018-10-19 2025-07-29 Lam Research Corporation In situ protective coating of chamber components for semiconductor processing

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US11469084B2 (en) 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
KR102905674B1 (ko) 2018-01-31 2025-12-29 램 리써치 코포레이션 정전 척 (electrostatic chuck, ESC) 페데스탈 전압 분리
US11086233B2 (en) * 2018-03-20 2021-08-10 Lam Research Corporation Protective coating for electrostatic chucks
KR102828235B1 (ko) 2018-06-14 2025-07-03 어플라이드 머티어리얼스, 인코포레이티드 보호 코팅을 갖는 프로세스 챔버 프로세스 키트
US11401599B2 (en) * 2018-06-18 2022-08-02 Applied Materials, Inc. Erosion resistant metal silicate coatings
US20200024735A1 (en) * 2018-07-18 2020-01-23 Applied Materials, Inc. Erosion resistant metal fluoride coatings deposited by atomic layer deposition
TWI902284B (zh) * 2018-07-18 2025-10-21 美商應用材料股份有限公司 原子層沉積所沉積的抗侵蝕金屬氟化物塗層
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
CN109107862A (zh) * 2018-09-29 2019-01-01 苏州三星电子电脑有限公司 金属材料加工方法
US11540432B2 (en) * 2019-09-26 2022-12-27 Applied Materials, Inc. Ultrathin conformal coatings for electrostatic dissipation in semiconductor process tools
EP4041933A4 (en) * 2019-10-08 2023-11-01 Applied Materials, Inc. Methods for depositing anti-coking protective coatings on aerospace components
CN112981323A (zh) * 2019-12-12 2021-06-18 有研工程技术研究院有限公司 一种氧化铝/氧化铒陶瓷涂层复合体系及其制备方法
US11658014B2 (en) * 2020-04-11 2023-05-23 Applied Materials, Inc. Apparatuses and methods of protecting nickel and nickel containing components with thin films
JP7562824B2 (ja) * 2020-07-09 2024-10-07 インテグリス・インコーポレーテッド フッ化酸化イットリウムおよび金属酸化物を含有するコーティング、ならびにコーティングを調製および使用する方法
US20230317634A1 (en) * 2022-04-05 2023-10-05 Applied Materials, Inc. Coatings with diffusion barriers for corrosion and contamination protection
WO2024225362A1 (ja) * 2023-04-27 2024-10-31 Ａｇｃ株式会社 酸化アルミニウム質膜およびその製造方法ならびに積層体

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080016684A1 (en) * 2006-07-06 2008-01-24 General Electric Company Corrosion resistant wafer processing apparatus and method for making thereof
US20090214824A1 (en) * 2004-06-29 2009-08-27 Mtu Aero Engines Gmbh Apparatus and method for coating a compressor housing
US20120183790A1 (en) * 2010-07-14 2012-07-19 Christopher Petorak Thermal spray composite coatings for semiconductor applications
US20140272341A1 (en) * 2013-03-14 2014-09-18 Applied Materials, Inc. Thermal treated sandwich structure layer to improve adhesive strength
US20160375515A1 (en) * 2015-06-29 2016-12-29 Lam Research Corporation Use of atomic layer deposition coatings to protect brazing line against corrosion, erosion, and arcing

Family Cites Families (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4935073A (en) 1981-11-27 1990-06-19 Sri International Process for applying coatings of zirconium and/or titantuim and a less noble metal to metal substrates and for converting the zirconium and/or titanium to an oxide, nitride, carbide, boride or silicide
US4724169A (en) 1984-10-09 1988-02-09 Ovonic Synthetic Materials Company, Inc. Method of producing multilayer coatings on a substrate
US5805973A (en) 1991-03-25 1998-09-08 General Electric Company Coated articles and method for the prevention of fuel thermal degradation deposits
US5630314A (en) 1992-09-10 1997-05-20 Hitachi, Ltd. Thermal stress relaxation type ceramic coated heat-resistant element
FI96138C (fi) 1992-12-23 1996-05-10 Noptel Oy Laitteisto ja menetelmä raiteen mittaukseen ja oikaisuun
JPH07126827A (ja) 1993-10-28 1995-05-16 Nippon Alum Co Ltd 金属表面の複合皮膜及びその形成方法
JP3362113B2 (ja) 1997-07-15 2003-01-07 日本碍子株式会社 耐蝕性部材、ウエハー設置部材および耐蝕性部材の製造方法
JP2000313656A (ja) 1999-04-28 2000-11-14 Taiheiyo Cement Corp 耐蝕性セラミックス材料および耐蝕性部材
US6352620B2 (en) 1999-06-28 2002-03-05 Applied Materials, Inc. Staged aluminum deposition process for filling vias
JP3510993B2 (ja) 1999-12-10 2004-03-29 トーカロ株式会社 プラズマ処理容器内部材およびその製造方法
KR20010062209A (ko) 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
FI117979B (fi) 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
US6685991B2 (en) 2000-07-31 2004-02-03 Shin-Etsu Chemical Co., Ltd. Method for formation of thermal-spray coating layer of rare earth fluoride
US6613442B2 (en) 2000-12-29 2003-09-02 Lam Research Corporation Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
US6916534B2 (en) 2001-03-08 2005-07-12 Shin-Etsu Chemical Co., Ltd. Thermal spray spherical particles, and sprayed components
US6830622B2 (en) 2001-03-30 2004-12-14 Lam Research Corporation Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof
JP2002356387A (ja) 2001-03-30 2002-12-13 Toshiba Ceramics Co Ltd 耐プラズマ性部材
JP4277973B2 (ja) 2001-07-19 2009-06-10 日本碍子株式会社 イットリア−アルミナ複合酸化物膜の製造方法、イットリア−アルミナ複合酸化物膜および耐蝕性部材
JP4921652B2 (ja) 2001-08-03 2012-04-25 エイエスエム インターナショナル エヌ．ヴェー． イットリウム酸化物およびランタン酸化物薄膜を堆積する方法
US20030029563A1 (en) 2001-08-10 2003-02-13 Applied Materials, Inc. Corrosion resistant coating for semiconductor processing chamber
US7371467B2 (en) 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
US20080213496A1 (en) 2002-02-14 2008-09-04 Applied Materials, Inc. Method of coating semiconductor processing apparatus with protective yttrium-containing coatings
JP2003277051A (ja) 2002-03-22 2003-10-02 Ngk Insulators Ltd イットリア−アルミナ複合酸化物膜を有する積層体、イットリア−アルミナ複合酸化物膜、耐蝕性部材、耐蝕性膜およびイットリア−アルミナ複合酸化物膜の製造方法
EP1386979B1 (en) * 2002-08-02 2008-03-05 Fujikura Ltd. Method of producing polycrystalline thin film and method of producing an oxide superconducting element
TW200423195A (en) 2002-11-28 2004-11-01 Tokyo Electron Ltd Internal member of a plasma processing vessel
WO2004095530A2 (en) 2003-03-31 2004-11-04 Tokyo Electron Limited Adjoining adjacent coatings on an element
CN1288108C (zh) 2003-10-24 2006-12-06 东芝陶瓷股份有限会社 耐等离子体构件、其制造方法及形成热喷涂涂层的方法
ITRM20030602A1 (it) * 2003-12-24 2005-06-25 Ct Sviluppo Materiali Spa Procedimento di produzione di rivestimento multistrato
JP4606121B2 (ja) 2004-01-29 2011-01-05 京セラ株式会社 耐食膜積層耐食性部材およびその製造方法
US7282254B1 (en) * 2004-02-23 2007-10-16 The Research Foundation Of State University Of New York Surface coating for electronic systems
JP2006186306A (ja) 2004-09-30 2006-07-13 Toshiba Ceramics Co Ltd ガス拡散プレートおよびその製造方法
KR101226120B1 (ko) 2004-10-26 2013-01-24 쿄세라 코포레이션 내식성 부재 및 그 제조방법
US7449409B2 (en) * 2005-03-14 2008-11-11 Infineon Technologies Ag Barrier layer for conductive features
WO2006137541A1 (ja) 2005-06-23 2006-12-28 Tokyo Electron Limited 半導体処理装置用の構成部材及びその製造方法
US7968205B2 (en) 2005-10-21 2011-06-28 Shin-Etsu Chemical Co., Ltd. Corrosion resistant multilayer member
CN101101887A (zh) * 2006-07-06 2008-01-09 通用电气公司 抗腐蚀的晶片处理设备及其制造方法
US20080029032A1 (en) 2006-08-01 2008-02-07 Sun Jennifer Y Substrate support with protective layer for plasma resistance
JP5252613B2 (ja) 2006-12-25 2013-07-31 国立大学法人東北大学 イオン注入装置およびイオン注入方法
KR101119075B1 (ko) 2007-03-12 2012-03-15 주식회사 코미코 웨이퍼 이송 장치
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
US7696117B2 (en) 2007-04-27 2010-04-13 Applied Materials, Inc. Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas
KR100863932B1 (ko) 2007-07-10 2008-11-18 주식회사 코미코 세라믹 용사 코팅층의 수화 처리 방법과, 이를 이용한정전척 제조 방법 그리고 상기 수화 처리 방법에 형성된세라믹 용사 코팅층을 갖는 기판 구조물 및 정전척
US20090046825A1 (en) * 2007-08-16 2009-02-19 Ge-Hitachi Nuclear Energy Americas Llc Protective coating applied to metallic reactor components to reduce corrosion products into the nuclear reactor environment
KR100982649B1 (ko) 2007-08-22 2010-09-16 주식회사 코미코 용사 코팅 방법, 이를 이용한 정전척 제조 방법 및 정전척
KR100859672B1 (ko) 2007-12-31 2008-09-23 주식회사 코미코 용사 코팅 방법
US20090214825A1 (en) 2008-02-26 2009-08-27 Applied Materials, Inc. Ceramic coating comprising yttrium which is resistant to a reducing plasma
EP2143819A1 (de) 2008-07-11 2010-01-13 Siemens Aktiengesellschaft Beschichtungsverfahren und Korrosionsschutzbeschichtung für Turbinen-Komponenten
US8206829B2 (en) 2008-11-10 2012-06-26 Applied Materials, Inc. Plasma resistant coatings for plasma chamber components
US8858745B2 (en) 2008-11-12 2014-10-14 Applied Materials, Inc. Corrosion-resistant bonding agents for bonding ceramic components which are exposed to plasmas
US9017765B2 (en) 2008-11-12 2015-04-28 Applied Materials, Inc. Protective coatings resistant to reactive plasma processing
TW201100578A (en) 2009-06-19 2011-01-01 Saint Gobain Ceramics & Plastics Inc Sealed plasma coatings
WO2011049938A2 (en) 2009-10-20 2011-04-28 Saint-Gobain Ceramics & Plastics, Inc. Microelectronic processing component having a corrosion-resistant layer, microelectronic workpiece processing apparatus incorporating same, and method of forming an article having the corrosion-resistant layer
US8619406B2 (en) 2010-05-28 2013-12-31 Fm Industries, Inc. Substrate supports for semiconductor applications
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
US8916021B2 (en) 2010-10-27 2014-12-23 Applied Materials, Inc. Electrostatic chuck and showerhead with enhanced thermal properties and methods of making thereof
US9166364B2 (en) * 2011-02-14 2015-10-20 Spectrasensors, Inc. Semiconductor laser mounting with intact diffusion barrier layer
US8623468B2 (en) 2012-01-05 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of fabricating metal hard masks
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9090046B2 (en) 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
US20130288037A1 (en) 2012-04-27 2013-10-31 Applied Materials, Inc. Plasma spray coating process enhancement for critical chamber components
US9394615B2 (en) 2012-04-27 2016-07-19 Applied Materials, Inc. Plasma resistant ceramic coated conductive article
WO2013176168A1 (ja) 2012-05-22 2013-11-28 株式会社東芝 プラズマ処理装置用部品およびプラズマ処理装置用部品の製造方法
TW201408679A (zh) 2012-05-25 2014-03-01 Air Liquide 用於蒸氣沈積之含鈦前驅物
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
KR101249951B1 (ko) 2012-10-24 2013-04-03 아이원스 주식회사 공정 장비의 코팅 방법 및 이를 이용한 코팅 구조
CN103794445B (zh) 2012-10-29 2016-03-16 中微半导体设备(上海)有限公司 用于等离子体处理腔室的静电夹盘组件及制造方法
CN103794458B (zh) 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于等离子体处理腔室内部的部件及制造方法
CN103794460B (zh) 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于半导体装置性能改善的涂层
US9666466B2 (en) 2013-05-07 2017-05-30 Applied Materials, Inc. Electrostatic chuck having thermally isolated zones with minimal crosstalk
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
US9711334B2 (en) 2013-07-19 2017-07-18 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based thin film coatings on process rings
US9583369B2 (en) 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US9624593B2 (en) 2013-08-29 2017-04-18 Applied Materials, Inc. Anodization architecture for electro-plate adhesion
US10468235B2 (en) * 2013-09-18 2019-11-05 Applied Materials, Inc. Plasma spray coating enhancement using plasma flame heat treatment
JP6394171B2 (ja) 2013-10-30 2018-09-26 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
US9440886B2 (en) 2013-11-12 2016-09-13 Applied Materials, Inc. Rare-earth oxide based monolithic chamber material
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
JP6058822B2 (ja) 2014-01-17 2017-01-11 イオンズ カンパニー リミテッド プラズマ抵抗性が向上したセラミック被膜の形成方法およびこれによるセラミック被膜
US10497598B2 (en) 2014-02-07 2019-12-03 Entegris, Inc. Electrostatic chuck and method of making same
WO2015151857A1 (ja) 2014-03-31 2015-10-08 株式会社東芝 耐プラズマ部品及び耐プラズマ部品の製造方法及び耐プラズマ部品の製造に用いる膜堆積装置
US9976211B2 (en) 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
US9869013B2 (en) * 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
US20150311043A1 (en) 2014-04-25 2015-10-29 Applied Materials, Inc. Chamber component with fluorinated thin film coating
US10730798B2 (en) 2014-05-07 2020-08-04 Applied Materials, Inc. Slurry plasma spray of plasma resistant ceramic coating
US10196728B2 (en) 2014-05-16 2019-02-05 Applied Materials, Inc. Plasma spray coating design using phase and stress control
US10385459B2 (en) 2014-05-16 2019-08-20 Applied Materials, Inc. Advanced layered bulk ceramics via field assisted sintering technology
CN105088141A (zh) * 2014-05-23 2015-11-25 中微半导体设备(上海)有限公司 电感耦合型等离子体处理腔室及其抗腐蚀绝缘窗口及制造方法
US9551070B2 (en) 2014-05-30 2017-01-24 Applied Materials, Inc. In-situ corrosion resistant substrate support coating
US9790581B2 (en) 2014-06-25 2017-10-17 Fm Industries, Inc. Emissivity controlled coatings for semiconductor chamber components
US9460898B2 (en) 2014-08-08 2016-10-04 Applied Materials, Inc. Plasma generation chamber with smooth plasma resistant coating
KR101465640B1 (ko) * 2014-08-08 2014-11-28 주식회사 펨빅스 불화알루미늄 생성방지막이 형성된 ｃｖｄ 공정챔버 부품
KR20160030812A (ko) 2014-09-11 2016-03-21 삼성전자주식회사 플라즈마 처리 장치
US10141582B2 (en) 2014-12-22 2018-11-27 Sonata Scientific LLC SOFC interconnect barriers and methods of making same
CN113930746A (zh) 2015-02-13 2022-01-14 恩特格里斯公司 用于增强衬底制品及装置的性质及性能的涂层
CN105986245A (zh) 2015-02-16 2016-10-05 中微半导体设备(上海)有限公司 改善mocvd反应工艺的部件及改善方法
SG11201707660VA (en) 2015-03-18 2017-10-30 Entegris Inc Articles coated with fluoro-annealed films
KR101661640B1 (ko) 2015-03-19 2016-09-30 아이원스 주식회사 정전척
US9790582B2 (en) 2015-04-27 2017-10-17 Lam Research Corporation Long lifetime thermal spray coating for etching or deposition chamber application
US20160358749A1 (en) 2015-06-04 2016-12-08 Lam Research Corporation Plasma etching device with plasma etch resistant coating
US20160379806A1 (en) 2015-06-25 2016-12-29 Lam Research Corporation Use of plasma-resistant atomic layer deposition coatings to extend the lifetime of polymer components in etch chambers
JP2017092156A (ja) 2015-11-03 2017-05-25 ナショナル チュン−シャン インスティテュート オブ サイエンス アンド テクノロジー 高密度のプラズマ及び高温の半導体製造プロセスに用いられる窒化アルミニウムの静電チャンク
CN106544622A (zh) 2016-11-18 2017-03-29 无锡明盛纺织机械有限公司 一种梯度复合耐磨涂层的制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090214824A1 (en) * 2004-06-29 2009-08-27 Mtu Aero Engines Gmbh Apparatus and method for coating a compressor housing
US20080016684A1 (en) * 2006-07-06 2008-01-24 General Electric Company Corrosion resistant wafer processing apparatus and method for making thereof
US20120183790A1 (en) * 2010-07-14 2012-07-19 Christopher Petorak Thermal spray composite coatings for semiconductor applications
US20140272341A1 (en) * 2013-03-14 2014-09-18 Applied Materials, Inc. Thermal treated sandwich structure layer to improve adhesive strength
US20160375515A1 (en) * 2015-06-29 2016-12-29 Lam Research Corporation Use of atomic layer deposition coatings to protect brazing line against corrosion, erosion, and arcing

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11920239B2 (en) 2015-03-26 2024-03-05 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
US10676819B2 (en) * 2016-06-23 2020-06-09 Applied Materials, Inc. Non-line of sight deposition of erbium based plasma resistant ceramic coating
US20180094348A1 (en) * 2016-06-23 2018-04-05 Applied Materials, Inc. Non-Line of Sight Deposition of Erbium Based Plasma Resistant Ceramic Coating
US20190067012A1 (en) * 2017-08-31 2019-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
US10535525B2 (en) * 2017-08-31 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
US11430918B2 (en) * 2017-11-13 2022-08-30 Xiamen San'an Optoelectronics Co., Ltd. Semiconductor device and light-emitting system
US12125948B2 (en) 2017-11-13 2024-10-22 Xiamen San'an Optoelectronics Co., Ltd. Semiconductor device and light-emitting system
US11761079B2 (en) 2017-12-07 2023-09-19 Lam Research Corporation Oxidation resistant protective layer in chamber conditioning
US12227837B2 (en) 2017-12-15 2025-02-18 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US11365479B2 (en) * 2017-12-15 2022-06-21 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US10760158B2 (en) * 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US12163219B2 (en) 2017-12-15 2024-12-10 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US20190185999A1 (en) * 2017-12-15 2019-06-20 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US12371781B2 (en) 2018-10-19 2025-07-29 Lam Research Corporation In situ protective coating of chamber components for semiconductor processing
US11562890B2 (en) 2018-12-06 2023-01-24 Applied Materials, Inc. Corrosion resistant ground shield of processing chamber
US20220130705A1 (en) * 2019-02-22 2022-04-28 Lam Research Corporation Electrostatic chuck with powder coating
KR20210097211A (ko) * 2019-03-04 2021-08-06 어플라이드 머티어리얼스, 인코포레이티드 챔버 부품 보호용 옥시-플루오라이드 화합물들
KR102701674B1 (ko) 2019-03-04 2024-08-30 어플라이드 머티어리얼스, 인코포레이티드 챔버 부품 보호용 옥시-플루오라이드 화합물들
US10858741B2 (en) 2019-03-11 2020-12-08 Applied Materials, Inc. Plasma resistant multi-layer architecture for high aspect ratio parts
US11332408B2 (en) * 2019-04-01 2022-05-17 China Nonferrous Metals (Guinlin) Geology And Mining Co., Ltd. Al2O3—ZrO2—Y2O3—TiN nanocomposite ceramic powder and preparation method thereof
US11118263B2 (en) * 2019-05-10 2021-09-14 Applied Materials, Inc. Method for forming a protective coating film for halide plasma resistance
CN112053929A (zh) * 2019-06-06 2020-12-08 中微半导体设备(上海)股份有限公司 用于等离子体腔室内部的部件及其制作方法
US20220277936A1 (en) * 2019-08-09 2022-09-01 Applied Materials, Inc. Protective multilayer coating for processing chamber components
US11402245B2 (en) 2019-08-13 2022-08-02 Rosemount Aerospace Inc. Air data probe corrosion protection
EP4073831A4 (en) * 2019-12-09 2024-01-10 Entegris, Inc. DIFFUSION BARRIERS MADE OF MULTIPLE BARRIER MATERIALS, AND ASSOCIATED ARTICLES AND METHODS
US12270104B2 (en) 2021-03-19 2025-04-08 Entegris, Inc. Substrate with fluorinated yttrium coatings, and methods of preparing and using the substrates

Also Published As

Publication number Publication date
TW201823487A (zh) 2018-07-01
WO2018013909A1 (en) 2018-01-18
TW201827626A (zh) 2018-08-01
US20180112311A1 (en) 2018-04-26
US11008653B2 (en) 2021-05-18
KR20190022944A (ko) 2019-03-06
JP2019214790A (ja) 2019-12-19
KR20190019887A (ko) 2019-02-27
JP7048544B2 (ja) 2022-04-05
JP7053452B2 (ja) 2022-04-12
CN107849704A (zh) 2018-03-27
KR102481924B1 (ko) 2022-12-26
CN108531907A (zh) 2018-09-14
JP2019522104A (ja) 2019-08-08
KR102481950B1 (ko) 2022-12-26

Similar Documents

Publication Publication Date Title
US11008653B2 (en) Multi-layer coating with diffusion barrier layer and erosion resistant layer
US20260024730A1 (en) Multi-layer plasma resistant coating by atomic layer deposition
US12104246B2 (en) Atomic layer deposition of protective coatings for semiconductor process chamber components
US10676819B2 (en) Non-line of sight deposition of erbium based plasma resistant ceramic coating
KR200498710Y1 (ko) 원자 층 증착에 의해 증착되는 내부식성 금속 플루오르화물 코팅들
TWI875703B (zh) 通過原子層沉積來沉積的抗侵蝕金屬氧化物塗層
US20220349041A1 (en) Erosion resistant metal silicate coatings
US20240401197A1 (en) Erosion resistant metal fluoride coatings deposited by atomic layer deposition

Legal Events

Date Code Title Description
AS Assignment

Owner name: APPLIED MATERIALS, INC., CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SUN, JENNIFER Y.;WU, XIAOWEI;FENWICK, DAVID;REEL/FRAME:044012/0144

Effective date: 20170207

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: FINAL REJECTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION

STPP Information on status: patent application and granting procedure in general

Free format text: FINAL REJECTION MAILED

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION