US20170104190A1 - Electrical storage system including a sheet-like discrete element, sheet-like discrete element, method for producing same, and use thereof - Google Patents

Electrical storage system including a sheet-like discrete element, sheet-like discrete element, method for producing same, and use thereof Download PDF

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Publication number
US20170104190A1
US20170104190A1 US15/386,075 US201615386075A US2017104190A1 US 20170104190 A1 US20170104190 A1 US 20170104190A1 US 201615386075 A US201615386075 A US 201615386075A US 2017104190 A1 US2017104190 A1 US 2017104190A1
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Prior art keywords
sheet
discrete element
thickness
storage system
electrical storage
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US15/386,075
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English (en)
Inventor
Ulrich Peuchert
Rainer Liebald
Miriam Kunze
Thorsten Damm
Clemens Ottermann
Nikolaus Schultz
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Schott AG
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Schott AG
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Priority claimed from DE102014117632.4A external-priority patent/DE102014117632A1/de
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Assigned to SCHOTT AG reassignment SCHOTT AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OTTERMANN, CLEMENS, DR., PEUCHERT, ULRICH, DR., Schultz, Nikolaus, Dr., KUNZE, MIRIAM, DR., LIEBALD, RAINER, DAMM, THORSTEN
Publication of US20170104190A1 publication Critical patent/US20170104190A1/en
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    • C03—GLASS; MINERAL OR SLAG WOOL
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    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/225—Nitrides
    • C—CHEMISTRY; METALLURGY
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    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
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    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
    • C—CHEMISTRY; METALLURGY
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    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/42—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating of an organic material and at least one non-metal coating
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Definitions

  • TFB thin film batteries
  • thin film storage elements which find their use in particular in mobile applications, for example in smart cards, in medical technology and sensor technology as well as in smartphones and other applications which require smart, miniaturized and possibly even flexible power sources.
  • An exemplary lithium-based thin film storage element has been described in US 2008/0001577 and basically consists of a substrate on which the electronically conductive collectors for the two electrodes are deposited in a first coating step.
  • the cathode material is first deposited on the cathode collector, usually lithium cobalt oxide, LCO.
  • a solid electrolyte is deposited, which is usually an amorphous material including the substances lithium, oxygen, nitrogen, and phosphorus, and which is referred to as LiPON.
  • an anode material is deposited so as to be in contact with the substrate, the anode collector, and the solid electrolyte. In particular metallic lithium is used as the anode material.
  • lithium ions When the two collectors are connected in electrically conductive manner, lithium ions will migrate through the solid-state ion conductor from the anode to the cathode in the charged state, resulting in a current flow from the cathode to the anode through the electrically conductive connection of the two collectors.
  • migration of the ions from the cathode to the anode can be enforced by applying an external voltage, whereby the battery is charged.
  • the layers deposited for such a thin film storage element usually have a thickness of about 20 ⁇ m or less, typically less than 10 ⁇ m or even less than 5 ⁇ m; a total thickness of the layer structure can be assumed to be 100 ⁇ m or less.
  • a thin film storage element is generally manufactured using complex coating processes also including patterned deposition of the individual materials. Very complex patterning of the exact thin film storage elements is possible, as can be seen from U.S. Pat. No. 7,494,742 B2, for example.
  • metallic lithium has to be handled under preferably water-free conditions since otherwise it would react to form lithium hydroxide and the functionality as an anode would no longer be ensured. Accordingly, a lithium-based thin film storage element must also be protected against moisture by an encapsulation.
  • U.S. Pat. No. 7,494,742 B2 describes such an encapsulation for the protection of non-stable constituents of a thin film storage element, such as, e.g., lithium or certain lithium compounds.
  • the encapsulation function is here provided by a coating or a system of different coatings which may fulfill further functions as part of the overall design of the battery.
  • a further issue with thin film storage elements relates to the substrate materials employed.
  • the prior art describes a multiplicity of different substrate materials, such as, for example, silicon, mica, various metals, and ceramic materials.
  • the use of glass is also often mentioned, but essentially without further details on the particular composition or precise properties thereof.
  • US 2001/0032666 A1 describes a capacitor-type energy storage which may for instance be a lithium-ion battery.
  • semiconductors are mentioned as substrate materials, inter alia.
  • U.S. Pat. No. 6,906,436 B2 describes a solid state battery in which metal foils, semiconductor materials or plastic films can be used as substrate materials, for example.
  • U.S. Pat. No. 6,906,436 B2 describes a variety of possibilities for optional substrate materials, for example metals or metal coatings, semiconducting materials or insulators such as sapphire, ceramics, or plastics. Different geometries of the substrate are possible.
  • EP 2434567 A2 mentions, as substrates, electrically conductive materials such as metals, insulating materials such as ceramics or plastics, and semiconducting materials such as, e.g., silicon, and combinations of semiconductors and conductors or more complex structures for adapting the coefficient of thermal expansion. These or similar materials are also mentioned in documents US 2008/0032236 A1, US 8,228,023 B2, and US 2010/0104942 A1.
  • US 2010/0104942 A1 describes, as substrate materials that are relevant in practice, only substrates made of metals or metal alloys having a high melting point, and dielectric materials such as high quartz, silicon wafers, aluminum oxide, and the like. This is due to the fact that for producing a cathode from the usually employed lithium cobalt oxide (LCO), a temperature treatment at temperatures of more than 400° C. or even more than 500° C. is necessary in order to obtain a crystal structure that is particularly favorable for storing Li + ions in this material, so that materials such as polymers or inorganic materials with low softening points cannot be used.
  • LCO lithium cobalt oxide
  • metals or metal alloys as well as dielectric materials have several shortcomings.
  • US 2010/0104942 A1 proposes a substrate made of different metals or silicon, wherein the redox potentials of the combined materials are adapted to each other so that controlled oxide formation occurs.
  • US 2012/0040211 A1 describes, as a substrate, a glass film having a thickness of at most 300 ⁇ m and a surface roughness of not more than 100 ⁇ . This low surface roughness is required because the layers of a thin film storage element generally have very low thicknesses. Even small unevenness of the surface may have a critical adverse effect on the functional layers of the thin film storage element and may thus result in failure of the battery as a whole.
  • WO 2014/062676 A1 describes thin film batteries comprising a glass or ceramic substrate having a coefficient of thermal expansion between 7 and 10 ppm/K in a range from 25 to 800° C., which is said to ensure a particularly crack-free structure especially of the cathode of such a battery even in case of increased thicknesses of the cathode layer. Information on the roughness of the substrate, its transmission properties and thickness variations are not given.
  • problems of conventional thin film storage elements are related to the corrosion susceptibility of the employed materials, in particular if metallic lithium is used, which implies complex layer structures and hence causes high costs, and also to the type of the substrate which should in particular be non-conductive but flexible, should exhibit high temperature resistance and should be inert to the most possible extent to the functional layers of the storage element used, and moreover should allow for deposition of layers preferably free of defects and with good layer adhesion on the substrate.
  • the method for avoiding high annealing temperatures proposed therein, namely by applying a bias voltage when creating the lithium cobalt oxide layer, however, is difficult to implement in the common in-line processes for producing thin film storage elements, as already described above, so that from a process engineering point of view it is more favorable to use a substrate having a correspondingly high temperature resistance.
  • the so-called carrier solution consists of temporarily fixing ultra-thin glass on a support prior to or during the coating process or the transfer process steps. This may optionally be achieved using electrostatic forces, or by using an organic, detachable adhesive compound. In particular in the latter case it has to be ensured, by suitable choice of the substrate or of the carrier which are usually made from the same material, that debonding, that means detachment of the substrate from the carrier is possible.
  • the debonding often provokes the occurrence of torsional stresses in the substrate, which stresses may furthermore be transferred to the layers deposited on the substrate, which also leads to cracks and detachment of the layers, so that as a result the layer defects caused by thickness variations of the substrate may further increase.
  • An object of the invention is to provide an electrical storage element which is improved in terms of durability and flexibility of design.
  • Another aspect of the invention is to provide a sheet-like discrete element for use in an electrical storage system.
  • an object of the present invention is to provide an electrical storage element, in particular a thin film storage element, which overcomes the shortcomings of the current prior art and provides for a cost-effective production of thin film storage elements.
  • a further object of the invention is to provide a sheet-like element for use in an electrical storage element, and a way for producing same and use thereof.
  • lithium cobalt oxide strongly absorbs in this range, and this energy is used for phase transition from a cubic close-packing of equal spheres into a hexagonal close-packing of equal spheres.
  • the high-temperature modification of LCO is known to be highly preferred since it introduces a higher specific capacity into the cell balance (130 to 140 mAh/g) than the cubic LT phase (80 mAh/g), see also Ensling, D., dissertation, Technical University of Darmstadt, 2006.
  • such exposure of the lithium cobalt oxide is preferably accomplished by passing the radiation through the substrate so that a substrate of increased transparency for high-energy electromagnetic radiation preferably in the wavelength range from 200 to 400 nm has to be employed.
  • such a substrate of increased transparency for high-energy electrical radiation is provided by a sheet-like discrete element.
  • a shaped body is considered as being sheet-like if the dimension of the element in one spatial direction is smaller by at least an order of magnitude than in the two other spatial directions.
  • a shaped body is considered as being discrete if it is separable as such from the electrical storage system under consideration, that is to say it may in particular as well be provided alone.
  • Such a sheet-like discrete element in the structure of an electrical storage system furthermore include: efficient bonding of the substrate on a carrier, because of the curing of the usually employed organic adhesive material by exposure to UV light; supports debonding, in particular if a temporarily bonding adhesive compound is employed, thereby avoiding layer defects by inappropriate handling during the detachment or during complex handling processes; and curing of polymers for providing an encapsulation to prevent contact of, e.g., oxygen and/or hydrogen with the highly reactive layers of an electrical storage element, such as described in DE 10 2012 206 273 A1, by way of example.
  • optical processing or processing using high-energy electromagnetic radiation of the electrical storage element is preferably accomplished using high-energy optical energy sources such as, for example, excimer lasers.
  • the sheet-like discrete element is preferably distinguished by an increased transparency at wavelengths that are characteristic for so-called excimer lasers.
  • excimer lasers with their characteristic wavelengths are listed below:
  • KrCl laser 222 nm KrF laser 248.35 nm XeBr laser 282 nm XeCl laser 308 nm XeF laser 351 nm
  • UV lamps may also be employed as further UV sources, such as, e.g., a mercury-vapor lamp.
  • the sheet-like discrete element is distinguished by a total thickness variation (ttv) in a range of ⁇ 25 ⁇ m, preferably of ⁇ 15 ⁇ m, more preferably of ⁇ 10 ⁇ m, and most preferably of ⁇ 5 ⁇ m based on the wafer or substrate size used, based on wafer or substrate sizes in a range of >100 mm in diameter, in particular with a lateral dimension of 100 mm ⁇ 100 mm, preferably based on wafer or substrate sizes in a range of >200 mm in diameter, in particular with a lateral dimension of 200 mm ⁇ 200 mm, and more preferably based on wafer or substrate sizes in a range of >400 mm in diameter, in particular with a lateral dimension of 400 mm ⁇ 400 mm.
  • ttv total thickness variation
  • the indication typically refers to wafer or substrate sizes in a range of >100 mm in diameter or a size of 100 mm ⁇ 100 mm, preferably >200 mm in diameter or a size of 200 mm ⁇ 200 mm, and more preferably >400 mm in diameter or a size of 400 mm ⁇ 400 mm.
  • the sheet-like discrete element of the invention has a thickness of not more than 2 mm, preferably less than 1 mm, more preferably less than 500 ⁇ m, and yet more preferably of less than or equal to 200 ⁇ m. Most preferred is a thickness of the substrate of less than or equal to 100 ⁇ m.
  • the sheet-like discrete element exhibits a water vapor transmission rate (WVTR) of ⁇ 10 ⁇ 3 g/(m 2 ⁇ d), preferably of ⁇ 10 ⁇ 5 g/(m 2 ⁇ d), and most preferably of ⁇ 10 ⁇ 6 g/(m 2 ⁇ d).
  • WVTR water vapor transmission rate
  • the specific electrical resistance at a temperature of 350° C. and at an alternating current with a frequency of 50 Hz is greater than 1.0*10 6 Ohm ⁇ cm.
  • the sheet-like discrete element is furthermore characterized by a maximum temperature resistance of at least 300° C., preferably at least 400° C., most preferably at least 500° C., and by a coefficient of linear thermal expansion a in a range from 2.0*10 ⁇ 6 /K to 10*10 ⁇ 6 /K, preferably from 2.5*10 ⁇ 6 /K to 9.5*10 ⁇ 6 /K, and most preferably from 3.0*10 ⁇ 6 /K to 9.5*10 ⁇ 6 /K.
  • linear coefficient of thermal expansion a is given for a range from 20 to 300° C.
  • the notations ⁇ and ⁇ (20-300) are used synonymously in the context of the present application.
  • the given value is the nominal coefficient of mean linear thermal expansion according to ISO 7991, which is determined in static measurement.
  • the maximum load temperature ⁇ Max is considered as a temperature at which the functional integrity of the material is still fully ensured and at which decomposition and/or degradation reactions of the material have not yet started. Naturally this temperature is defined differently depending on the material used.
  • the maximum load temperature is usually given by the melting point; for glasses usually the glass transition temperature T g is assumed, however, for organic glasses the decomposition temperature may even be below T g ; and for metals or metal alloys the maximum load temperature can be approximately indicated by the melting point, unless the metal or the metal alloy reacts in a degradation reaction below the melting point.
  • the transformation temperature T g is defined by the point of intersection of the tangents to the two branches of the expansion curve when measuring with a heating rate of 5 K/min. This corresponds to a measurement according to ISO 7884-8 or DIN 52324, respectively.
  • the sheet-like element of the invention consists of at least one oxide or a mixture or compound of oxides.
  • this at least one oxide is SiO 2 .
  • the sheet-like element is made of glass.
  • glass refers to a material which is essentially inorganic in nature and predominantly consists of compounds of metals and/or semimetals with elements of groups VA, VIA, and VIIA of the periodic table of elements, but preferably with oxygen, and which is distinguished by an amorphous state, i.e. a three-dimensional state without periodical order, and by a specific electrical resistance of greater than 1.0*10 6 Ohm ⁇ cm.
  • the amorphous material LiPON which is used as a solid-state ion conductor is not considered to be a glass in the sense of the present application.
  • the sheet-like element of the invention is obtained by a melting process.
  • the sheet-like element is formed into a sheet-like shape in a shaping process following the melting process.
  • This shaping may be performed directly following the melting (known as hot forming).
  • hot forming it is as well possible that first a solid, essentially non-shaped body is obtained which is transformed into a sheet-like state in a further step, by reheating and mechanical reshaping.
  • shaping of the sheet-like element is accomplished by a hot forming process
  • this will, according to one embodiment of the invention, involve drawing processes, for example down-draw, up-draw, or overflow fusion processes.
  • drawing processes for example down-draw, up-draw, or overflow fusion processes.
  • other hot forming processes are also possible, for example shaping in a float process.
  • composition of the sheet-like discrete element is given, by way of example, by the following composition, in wt %:
  • composition of the sheet-like discrete element is furthermore given, by way of example, by the following composition, in wt %:
  • a total of the amounts of MgO, CaO, and BaO is in a range from 8 to 18 wt %.
  • composition of the sheet-like discrete element is furthermore given, by way of example, by the following composition, in wt %:
  • a possible sheet-like discrete element is furthermore given, by way of example, by the following composition, in wt %:
  • Another sheet-like discrete element is given, by way of example, by the following composition, in wt %:
  • Another sheet-like discrete element is given, by way of example, by the following composition, in wt %:
  • SiO 2 62 2. Al 2 O 3 17 3. Na 2 O 13 4. K 2 O 3.5 5. MgO 3.5 6. CaO 0.3 7. SnO 2 0.1 8. TiO 2 0.6.
  • the glass may include: from 0 to 1 wt %: P 2 O 5 , SrO, BaO; and from 0 to 1 wt % of refining agents: SnO 2 , CeO 2 , or As 2 O 3 , or other refining agents.
  • all the exemplary embodiments mentioned above may optionally contain refining agents from 0 to 1 wt %, for example SnO 2 , CeO 2 , As 2 O 3 , Cl ⁇ , F ⁇ , sulfates.
  • FIG. 1 schematically shows an electrical storage system according to the present invention
  • FIG. 2 schematically illustrates a sheet-like discrete element according to the present invention
  • FIG. 3 shows transmittance profiles of a sheet-like discrete element according to the invention at three different thicknesses
  • FIG. 4 shows transmittance profiles for three different thicknesses for the glass BOROFLOAT®33 from Schott AG
  • FIG. 5 shows transmittance data for another sheet-like discrete element of the invention with three different thicknesses
  • FIG. 6 shows transmittance data for another sheet-like discrete element of the invention with two different thicknesses
  • FIG. 7 shows transmittance data for a further sheet-like discrete element of the invention with two different thicknesses
  • FIG. 8 shows transmittance data for a further sheet-like discrete element of the invention with two different thicknesses.
  • FIG. 1 schematically shows an electrical storage system 1 according to the present invention. It comprises a sheet-like discrete element 2 which is used as a substrate. A sequence of different layers is applied on the substrate. By way of example and without being limited to the present example, first the two collector layers are applied on the sheet-like discrete element 2 , cathode collector layer 3 , and anode collector layer 4 . Such collector layers usually have a thickness of a few micrometers and are made of a metal, for example of copper, aluminum, or titanium. Superimposed on collector layer 3 is cathode layer 5 .
  • the cathode is made of a lithium/transition metal compound, preferably an oxide, for example of LiCoO 2 , of LiMnO 2 , or else of LiFePO 4 .
  • the electrolyte 6 is applied on the substrate and is at least partially overlapping cathode layer 5 .
  • this electrolyte is mostly LiPON, a compound of lithium with oxygen, phosphorus, and nitrogen.
  • the electrical storage system 1 comprises an anode 7 which may for instance be made of lithium titanium oxide or else of metallic lithium.
  • Anode layer 7 is at least partially overlapping electrolyte layer 6 and collector layer 4 .
  • the electrical storage system 1 comprises an encapsulation layer 8 .
  • any material which prevents or greatly reduces the attack of fluids or other corrosive materials on the electrical storage system 1 is considered as an encapsulation or sealing of the electrical storage system 1 .
  • FIG. 2 schematically illustrates a sheet-like discrete element according to the present invention, here in the form of a sheet-like shaped body 10 .
  • a shaped body is referred to as being sheet-like or a sheet if its dimension in one spatial direction is not more than half of that in the two other spatial directions.
  • a shaped body is referred to as a ribbon in the present invention if it has a length, width, and thickness for which the following relationship applies: the length is at least ten times larger than the width which in turn is at least twice as large as the thickness.
  • FIG. 3 shows, by way of example, transmittance profiles of a sheet-like discrete element according to the invention which has a composition according to exemplary embodiment 4, with three different thicknesses. At rather large wavelengths, clearly perceptible interference effects occur, which are caused by measurement technology and thus do not represent a characteristic of the discrete sheet-like element.
  • FIG. 4 shows transmittance profiles for three different thicknesses for the glass BOROFLOAT®33 from Schott AG.
  • the composition of the glass corresponds to exemplary embodiment 7.
  • FIG. 5 shows transmittance data for another sheet-like discrete element of the invention, which has a composition according to exemplary embodiment 5, with three different thicknesses. At rather large wavelengths, clearly perceptible interference effects occur, which are caused by measurement technology and thus do not represent a characteristic of the discrete sheet-like element.
  • FIG. 6 shows transmittance data for another sheet-like discrete element of the invention, which has a composition according to exemplary embodiment 6, with two different thicknesses.
  • clearly perceptible interference effects occur, which are caused by measurement technology and thus do not represent a characteristic of the discrete sheet-like element.
  • preparation-related surface defects were obtained, which in the measurement cause an increase in the scattered fraction and hence a reduction of the transmittance of the sheet-like discrete element illustrated herein, which takes effect starting at wavelengths of about 250 nm and above. These preparation-related defects thus do not represent a characteristic of the sheet-like discrete element.
  • FIG. 7 shows transmittance data for a further sheet-like discrete element of the invention, which has a composition according to exemplary embodiment 10, with two different thicknesses.
  • the transmittance profile shows effects which are presumably caused by fluorescence due to the cerium contained in the composition of the sheet-like discrete element.
  • FIG. 8 shows transmittance data for a further sheet-like discrete element of the invention, which has a composition according to exemplary embodiment 12, with two different thicknesses.
  • an electrical storage system comprising at least one sheet-like discrete element which in particular in case of a thickness of 30 ⁇ m has a transmittance in a range from 200 nm to 270 nm of 0.1% or more, and/or a transmittance of more than 0.5% in particular preferably at 222 nm, of more than 0.3% in particular preferably at 248 nm, of more than 3% in particular preferably at 282 nm, of more than 50% in particular preferably at 308 nm, and of more than 88% in particular preferably at 351 nm, and in particular in case of a thickness of 100 ⁇ m has a transmittance in the range from 200 nm to 270 nm of 0.1% or more, and/or of more than 0.5% in particular preferably at 222 nm, of more than 0.3% in particular preferably at 248 nm, of more than 0.1% in particular preferably at 282 nm, of more than 30% in particular preferably at 30
  • an electrical storage system comprising at least one sheet-like discrete element which in particular in case of a thickness of 30 ⁇ m has a transmittance in the range from 200 nm to 270 nm of 15% or more and/or a transmittance of more than 0.5% in particular preferably at 222 nm, of more than 0.3% in particular preferably at 248 nm, of more than 3% in particular preferably at 282 nm, of more than 50% in particular preferably at 308 nm, and of more than 88% in particular preferably at 351 nm.
  • an electrical storage system comprising at least one sheet-like discrete element, wherein the sheet-like discrete element exhibits a thickness variation of not more than 25 ⁇ m, preferably of not more than 15 ⁇ m, more preferably of not more than 10 ⁇ m, and most preferably of not more than 5 ⁇ m, based on wafer or substrate sizes in a range of >100 mm in diameter, in particular with a lateral dimension of 100 mm ⁇ 100 mm, preferably based on wafer or substrate sizes in a range of >200 mm in diameter, in particular with a lateral dimension of 200 mm ⁇ 200 mm, and more preferably based on wafer or substrate sizes in a range of >400 mm in diameter, in particular with a lateral dimension of 400 mm ⁇ 400 mm.
  • an electrical storage system comprising at least one sheet-like discrete element, the at least one sheet-like discrete element exhibiting a water vapor transmission rate (WVTR) of ⁇ 10 ⁇ 3 g/(m 2 ⁇ d), preferably of ⁇ 10 ⁇ 5 g/(m 2 ⁇ d), and more preferably of ⁇ 10 ⁇ 6 g/(m 2 ⁇ d).
  • WVTR water vapor transmission rate
  • the sheet-like discrete element has a thickness of less than 2 mm, preferably less than 1 mm, more preferably less than 500 ⁇ m, yet more preferably of less than or equal to 200 ⁇ m, and most preferably of less than or equal to 100 ⁇ m.
  • an electrical storage system comprising at least one sheet-like discrete element, wherein the at least one sheet-like discrete element has a specific electrical resistance at a temperature of 350° C. and at alternating current with a frequency of 50 Hz of greater than 1.0*10 6 Ohm ⁇ cm.
  • an electrical storage system comprising at least one sheet-like discrete element, wherein the at least one sheet-like discrete element exhibits a maximum load temperature ⁇ Max of at least 300° C., preferably at least 400° C., most preferably at least 500 ° C.
  • an electrical storage system comprising at least one sheet-like discrete element, wherein the at least one sheet-like discrete element has a coefficient of linear thermal expansion a in a range from 2.0*10 ⁇ 6 /K to 10*10 ⁇ 6 /K, preferably from 2.5*10 ⁇ 6 /K to 9.5*10 ⁇ 6 /K, and most preferably from 3.0*10 ⁇ 6 /K to 9.5*10 ⁇ 6 /K.
  • an electrical storage system comprising at least one sheet-like discrete element, wherein the following relationship applies to a product of maximum load temperature ⁇ Max , in ° C., and coefficient of linear thermal expansion a of the at least one sheet-like discrete element: 600 ⁇ 10 ⁇ 6 ⁇ Max ⁇ 8000 ⁇ 10 ⁇ 6 , particularly preferably 800 ⁇ 10 ⁇ 6 ⁇ Max ⁇ 5000 ⁇ 10 ⁇ 6 .
  • the at least one sheet-like discrete element comprises at least one oxide or a mixture or compound of a plurality of oxides.
  • an electrical storage system in which the at least one sheet-like discrete element contains SiO 2 as an oxide.
  • an electrical storage system in which the at least one sheet-like discrete element is a glass.
  • an electrical storage system in which the at least one sheet-like discrete element was formed into a sheet-like shape by a melting process with a subsequent shaping process.
  • an electrical storage system in which at least one region of the storage system was processed using high-energy electromagnetic radiation, preferably in a range of wavelengths from 200 to 400 nm.
  • an electrical storage system in which the at least one region of the storage system that was processed using high-energy electromagnetic radiation preferably in a range of wavelengths from 200 to 400 nm was supplied with the high-energy electromagnetic radiation passing through the sheet-like discrete element.
  • an electrical storage system in which the at least one region of the storage system that was processed using high-energy electromagnetic radiation comprises a lithium cobalt oxide (LCO).
  • LCO lithium cobalt oxide
  • an electrical storage system in which in the at least one region of the storage system that was processed using high-energy electromagnetic radiation, the lithium cobalt oxide (LCO) was influenced in its structural properties.
  • LCO lithium cobalt oxide
  • an electrical storage system in which in the at least one region of the storage system that was processed using high-energy electromagnetic radiation, a phase transition of the lithium cobalt oxide (LCO) has been caused at least in sections thereof.
  • LCO lithium cobalt oxide
  • phase transition of the lithium cobalt oxide (LCO) at least in sections thereof comprises a phase transition from a cubic close-packing of equal spheres into a hexagonal close-packing of equal spheres.
  • a sheet-like discrete element for use in an electrical storage system which in particular in case of a thickness of 30 ⁇ m has a transmittance in a range from 200 nm to 270 nm of 0.1% or more, and/or of more than 0.5% in particular preferably at 222 nm, of more than 0.3% in particular preferably at 248 nm, of more than 3% in particular preferably at 282 nm, of more than 50% in particular preferably at 308 nm, and of more than 88% in particular preferably at 351 nm, and in particular in case of a thickness of 100 ⁇ m has a transmittance in the range from 200 nm to 270 nm of 0.1% or more, and/or of more than 0.5% in particular preferably at 222 nm, of more than 0.3% in particular preferably at 248 nm, of more than 0.1% in particular preferably at 282 nm, of more than 30% in particular preferably at 308 nm, and of more than 88%
  • a sheet-like discrete element for use in an electrical storage system which in particular in case of a thickness of 30 ⁇ m has a transmittance in the range from 200 nm to 270 nm of 15% or more and/or a transmittance of more than 0.5% in particular preferably at 222 nm, of more than 0.3% in particular preferably at 248 nm, of more than 3% in particular preferably at 282 nm, of more than 50% in particular preferably at 308 nm, and of more than 88% in particular preferably at 351 nm.
  • a sheet-like discrete element for use in an electrical storage system, the sheet-like discrete element exhibiting a thickness variation of not more than 25 ⁇ m, preferably of not more than 15 ⁇ m, more preferably of not more than 10 ⁇ m, and most preferably of not more than 5 ⁇ m, based on wafer or substrate sizes in a range of >100 mm in diameter, in particular with a lateral dimension of 100 mm ⁇ 100 mm, preferably based on wafer or substrate sizes in a range of >200 mm in diameter, in particular with a lateral dimension of 200 mm ⁇ 200 mm, and more preferably based on wafer or substrate sizes in a range of >400 mm in diameter, in particular with a lateral dimension of 400 mm ⁇ 400 mm.
  • a sheet-like discrete element for use in an electrical storage system, the sheet-like discrete element exhibiting a water vapor transmission rate (WVTR) of ⁇ 10 ⁇ 3 g/(m 2 ⁇ d), preferably of ⁇ 10 ⁇ 6 g/(m 2 ⁇ d), and more preferably of ⁇ 10 ⁇ 6 g/(m 2 ⁇ d).
  • WVTR water vapor transmission rate
  • a sheet-like discrete element for use in an electrical storage system, wherein the sheet-like discrete element has a thickness of less than 2 mm, preferably less than 1 mm, more preferably less than 500 ⁇ m, yet more preferably of less than or equal to 200 ⁇ m, and most preferably of smaller than or equal to 100 ⁇ m.
  • a sheet-like discrete element for use in an electrical storage system, wherein the sheet-like discrete element has a specific electrical resistance at a temperature of 350° C. and at alternating current with a frequency of 50 Hz of greater than 1.0*10 6 Ohm ⁇ cm.
  • a sheet-like discrete element for use in an electrical storage system, the sheet-like discrete element exhibiting a maximum load temperature ⁇ Max of at least 300° C., preferably at least 400° C., most preferably at least 500° C.
  • a sheet-like discrete element for use in an electrical storage system, wherein the sheet-like discrete element has a coefficient of linear thermal expansion a in a range from 2.0*10 ⁇ 6 /K to 10*10 ⁇ 6 /K, preferably from 2.5*10 ⁇ 6 /K to 9.5*10 ⁇ 6 /K, and most preferably from 3.0*10 ⁇ 6 /K to 9.5*10 ⁇ 6 /K.
  • a sheet-like discrete element for use in an electrical storage system, wherein the following relationship applies to a product of maximum load temperature ⁇ Max , in ° C., and coefficient of linear thermal expansion a of the at least one sheet-like discrete element: 600 ⁇ 10 ⁇ 6 ⁇ Max ⁇ 8000 ⁇ 10 ⁇ 6 , particularly preferably 800 ⁇ 10 ⁇ 6 ⁇ Max ⁇ 5000 ⁇ 10 ⁇ 6 .
  • a sheet-like discrete element for use in an electrical storage system, in which the sheet-like discrete element comprises at least one oxide or a mixture or compound of a plurality of oxides.
  • a sheet-like discrete element for use in an electrical storage system, in which the at least one oxide is SiO 2 .
  • a sheet-like discrete element for use in an electrical storage system, in which the element is made of glass.
  • a sheet-like discrete element for use in an electrical storage system, in which the element is formed into a sheet-like shape by a melting process with a subsequent shaping process.
  • a sheet-like discrete element for use in an electrical storage system, in which the subsequent shaping process comprises a drawing process.
  • discrete sheet-like elements of greater or smaller thickness if these thicker or thinner discrete sheet-like elements meet the values of the recited herein when converted into a thickness of 30 ⁇ m.
  • Thicker substrates may be thinned to a thickness of 30 ⁇ m in order to determine whether they fall into the scope of protection.
  • Thinner discrete elements may also be brought to a thickness of 30 ⁇ m by being stacked and optionally thinned, if necessary, so that instead of the converting a physical measurement of transmittance can be performed in order to determine whether these thinner substrates fall into the scope of protection.
US15/386,075 2014-06-23 2016-12-21 Electrical storage system including a sheet-like discrete element, sheet-like discrete element, method for producing same, and use thereof Abandoned US20170104190A1 (en)

Applications Claiming Priority (15)

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DE102014008936 2014-06-23
DE102014008934 2014-06-23
DE102014008936.3 2014-06-23
DE102014008934.7 2014-06-23
DE102014010734 2014-07-23
DE102014010734.5 2014-07-23
DE102014010735.3 2014-07-23
DE102014010735 2014-07-23
DE102014111666.6 2014-08-14
DE102014111666 2014-08-14
DE102014013625.6 2014-09-19
DE102014013625 2014-09-19
DE102014117632.4A DE102014117632A1 (de) 2014-06-23 2014-12-01 Elektrisches Speichersystem enthaltend ein scheibenförmiges diskretes Element, scheibenförmiges diskretes Element sowie Verfahren zu dessen Herstellung und dessn Verwendung
DE102014117632.4 2014-12-01
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10418658B2 (en) 2014-12-01 2019-09-17 Schott Ag Electrical storage system comprising a disc-shaped discrete element, discrete element, method for the production thereof, and use thereof
CN111684639A (zh) * 2018-01-16 2020-09-18 印制能源技术有限公司 薄膜式能量存储装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016011412A1 (en) 2014-07-17 2016-01-21 Ada Technologies, Inc. Extreme long life, high energy density batteries and method of making and using the same
WO2016209460A2 (en) 2015-05-21 2016-12-29 Ada Technologies, Inc. High energy density hybrid pseudocapacitors and method of making and using the same
WO2017023797A1 (en) 2015-07-31 2017-02-09 Ada Technologies, Inc. High energy and power electrochemical device and method of making and using same
US11024846B2 (en) 2017-03-23 2021-06-01 Ada Technologies, Inc. High energy/power density, long cycle life, safe lithium-ion battery capable of long-term deep discharge/storage near zero volt and method of making and using the same
KR102459678B1 (ko) * 2018-10-31 2022-10-28 주식회사 엘지에너지솔루션 리튬 이차 전지용 음극, 이를 포함하는 리튬 이차 전지 및 이의 제조방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020015887A1 (en) * 1998-11-13 2002-02-07 Fmc Corporation Method of producing layered lithium metal oxides free of localized cubic spinel-like structural phases

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2247331A (en) 1938-01-22 1941-06-24 Ferguson John Glassmaking batch
JPS5266512A (en) 1975-11-28 1977-06-02 Toshiba Kasei Kougiyou Kk Photochromic glass for cutting off ultraviolet rays
US4168351A (en) * 1978-02-10 1979-09-18 P. R. Mallory & Co., Inc. Stabilized glass-to-metal seals in lithium cell environments
JPS54113618A (en) 1978-02-24 1979-09-05 Toshiba Kasei Kougiyou Kk Ultraviolet absorbing glass for medical bottle
DE3128863A1 (de) * 1981-07-22 1983-02-10 Varta Batterie Ag, 3000 Hannover Lithium-zelle mit glasdurchfuehrung
US5338625A (en) 1992-07-29 1994-08-16 Martin Marietta Energy Systems, Inc. Thin film battery and method for making same
CA2293642C (en) 1997-07-22 2006-11-07 Blacklight Power, Inc. Inorganic hydrogen compounds, separation methods, and fuel applications
US6982132B1 (en) * 1997-10-15 2006-01-03 Trustees Of Tufts College Rechargeable thin film battery and method for making the same
DE19810325A1 (de) 1998-03-11 1999-09-16 Karl Otto Platz Verfahren zur Erhöhung der Kantenfestigkeit der Glaskanten einer Dünnglasscheibe
US6214061B1 (en) 1998-05-01 2001-04-10 Polyplus Battery Company, Inc. Method for forming encapsulated lithium electrodes having glass protective layers
US7131189B2 (en) 2000-03-24 2006-11-07 Cymbet Corporation Continuous processing of thin-film batteries and like devices
US6387563B1 (en) 2000-03-28 2002-05-14 Johnson Research & Development, Inc. Method of producing a thin film battery having a protective packaging
US6835493B2 (en) 2002-07-26 2004-12-28 Excellatron Solid State, Llc Thin film battery
US6916679B2 (en) 2002-08-09 2005-07-12 Infinite Power Solutions, Inc. Methods of and device for encapsulation and termination of electronic devices
US6906436B2 (en) 2003-01-02 2005-06-14 Cymbet Corporation Solid state activity-activated battery device and method
JP4245933B2 (ja) 2003-02-13 2009-04-02 セイコーインスツル株式会社 リフローハンダ付け用非水電解質二次電池
JP2004269347A (ja) 2003-02-18 2004-09-30 Nippon Electric Glass Co Ltd ガラス組成物
DE102004027119A1 (de) 2003-06-06 2004-12-30 Schott Ag UV-Strahlung absorbierendes Glas mit geringer Absorption im sichtbaren Bereich, ein Verfahren zu seiner Herstellung sowie dessen Verwendung
US7211351B2 (en) 2003-10-16 2007-05-01 Cymbet Corporation Lithium/air batteries with LiPON as separator and protective barrier and method
WO2005067645A2 (en) 2004-01-06 2005-07-28 Cymbet Corporation Layered barrier structure having one or more definable layers and method
DE102004033653B4 (de) 2004-07-12 2013-09-19 Schott Ag Verwendung eines Glases für EEFL Fluoreszenzlampen
WO2006086002A2 (en) * 2004-07-23 2006-08-17 California Institute Of Technology Long cycle life elevated temperature thin film batteries
US7846579B2 (en) 2005-03-25 2010-12-07 Victor Krasnov Thin film battery with protective packaging
DE102005019958B4 (de) 2005-04-29 2010-02-18 Schott Ag Blitzlicht-Leuchtquelle mit Hüllenglas
US7776478B2 (en) 2005-07-15 2010-08-17 Cymbet Corporation Thin-film batteries with polymer and LiPON electrolyte layers and method
US7524577B2 (en) 2005-09-06 2009-04-28 Oak Ridge Micro-Energy, Inc. Long life thin film battery and method therefor
US7553582B2 (en) 2005-09-06 2009-06-30 Oak Ridge Micro-Energy, Inc. Getters for thin film battery hermetic package
JP4873925B2 (ja) * 2005-10-28 2012-02-08 株式会社オハラ リチウムイオン二次電池およびその製造方法
KR20090033451A (ko) 2006-06-30 2009-04-03 사임베트 코퍼레이션 박막 밧데리 재충전 시스템 및 방법
WO2008011061A1 (en) 2006-07-18 2008-01-24 Cymbet Corporation Method and apparatus for solid-state microbattery photolithographic manufacture, singulation and passivation
EP2111657A2 (en) 2007-02-09 2009-10-28 Cymbet Corporation Charging systems and methods
US7862927B2 (en) 2007-03-02 2011-01-04 Front Edge Technology Thin film battery and manufacturing method
JP5518696B2 (ja) 2007-03-26 2014-06-11 シンベット・コーポレイション 薄膜リチウム電池用基板
US7862627B2 (en) 2007-04-27 2011-01-04 Front Edge Technology, Inc. Thin film battery substrate cutting and fabrication process
US8628645B2 (en) 2007-09-04 2014-01-14 Front Edge Technology, Inc. Manufacturing method for thin film battery
KR100962032B1 (ko) 2007-12-11 2010-06-08 지에스나노텍 주식회사 전극의 표면적 및 전극과 전해질의 접촉면적을 증가시킨박막형 전지 및 그의 제조방법
JP4766057B2 (ja) 2008-01-23 2011-09-07 ソニー株式会社 非水電解質電池および非水電解質電池の製造方法
JP5144845B2 (ja) 2008-01-31 2013-02-13 株式会社オハラ 固体電池
US8420252B2 (en) 2008-02-27 2013-04-16 Cymbet Corporation Battery layout incorporating full metal edge seal
EP2252555A2 (fr) 2008-03-03 2010-11-24 Saint-Gobain Glass France Procede d'elaboration de verre
KR100986299B1 (ko) * 2008-03-25 2010-10-08 국방과학연구소 발열체, 열 스위치, 전지 모듈 및 핀 구조물을 구비하는 전지
US20110094584A1 (en) * 2008-06-17 2011-04-28 Nippon Electric Glass Co., Ltd. Solar cell substrate and oxide semiconductor electrode for dye-sensitized solar cell
JP2010073551A (ja) 2008-09-19 2010-04-02 Nippon Electric Glass Co Ltd 色素増感型太陽電池用基板および色素増感型太陽電池用酸化物半導体電極
CN102210023B (zh) 2008-11-07 2015-09-30 Sakti3有限公司 一体式结构中的多个电化学和聚能组件的制造方法和结构
US8043986B2 (en) * 2008-11-13 2011-10-25 General Electric Company Sealing glass composition, method and article
US9799914B2 (en) 2009-01-29 2017-10-24 Corning Incorporated Barrier layer for thin film battery
JP5515308B2 (ja) 2009-02-03 2014-06-11 ソニー株式会社 薄膜固体リチウムイオン二次電池及びその製造方法
CN102301517A (zh) * 2009-02-23 2011-12-28 日本电气硝子株式会社 锂离子电池用玻璃膜
JP5481900B2 (ja) 2009-03-26 2014-04-23 セイコーエプソン株式会社 固体二次電池、固体二次電池の製造方法
EP2234188A1 (en) * 2009-03-27 2010-09-29 Koninklijke Philips Electronics N.V. Battery apparatus
TW201105363A (en) 2009-07-14 2011-02-16 Univ Yamagata Eye drop for macular edema treatment
JP5504765B2 (ja) 2009-09-02 2014-05-28 株式会社豊田中央研究所 全固体型リチウム二次電池
JP2011098852A (ja) 2009-11-05 2011-05-19 Nippon Electric Glass Co Ltd フラッシュランプ用外套容器
KR101313156B1 (ko) * 2009-12-04 2013-09-30 주식회사 아모그린텍 다성분계 나노 복합산화물 분말과 그 제조방법, 이를 이용한 전극의 제조방법과 이를 이용한 박막 전지 및 그 제조방법
DE102010023176B4 (de) 2010-06-09 2013-02-21 Schott Ag Verfahren zur Herstellung von Klarglas oder klarem Ziehglas unter Verwendung eines speziellen Läuterverfahrens
KR101138570B1 (ko) 2010-08-27 2012-05-10 삼성전기주식회사 전기 화학 커패시터
GB201102724D0 (en) * 2011-02-17 2011-03-30 Pilkington Group Ltd Heat treatable coated glass pane
JP2013026187A (ja) 2011-07-26 2013-02-04 Nippon Electric Glass Co Ltd 蓄電デバイス用負極材料とその製造方法
JPWO2013035519A1 (ja) 2011-09-09 2015-03-23 株式会社村田製作所 全固体電池およびその製造方法
DE102011084128A1 (de) 2011-10-07 2013-04-11 Schott Ag Verfahren zum Schneiden eines Dünnglases mit spezieller Ausbildung der Kante
US8865340B2 (en) 2011-10-20 2014-10-21 Front Edge Technology Inc. Thin film battery packaging formed by localized heating
WO2013073594A1 (ja) 2011-11-15 2013-05-23 日立化成株式会社 リチウムイオン二次電池用材料及びその使用
KR101368323B1 (ko) * 2011-12-16 2014-02-28 지에스에너지 주식회사 기판 표면처리를 통하여 전지 성능이 향상된 박막전지 및 그 제조 방법
KR101355007B1 (ko) 2012-03-21 2014-01-24 지에스칼텍스 주식회사 고온 열처리가 가능한 플렉시블 박막전지 및 이의 제조방법
US9257695B2 (en) 2012-03-29 2016-02-09 Front Edge Technology, Inc. Localized heat treatment of battery component films
DE102012206273A1 (de) 2012-04-17 2013-10-17 Tesa Se Vernetzbare Klebmasse mit Hart- und Weichblöcken als Permeantenbarriere
EP2848594A4 (en) 2012-05-11 2016-01-27 Asahi Glass Co Ltd FRONT GLASS PLATE FOR LAMINATED BODY, AND LAMINATED BODY
DE102012211335A1 (de) 2012-06-29 2014-01-02 Tesa Se Klebeband für die Kapselung einer organischen elektronischen Anordnung
JP2015529748A (ja) 2012-07-26 2015-10-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 低温アニールを用いる電気化学デバイス製造プロセス
DE102012215824A1 (de) 2012-07-26 2014-11-13 Schott Ag Zusatzstoff für elektrochemische Energiespeicher und elektrochemischer Energiespeicher
WO2014062676A1 (en) 2012-10-15 2014-04-24 Cymbet Corporation Thin film batteries comprising a glass or ceramic substrate
US20140261662A1 (en) * 2013-03-18 2014-09-18 E I Du Pont De Nemours And Company Method of manufacturing a solar cell electrode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020015887A1 (en) * 1998-11-13 2002-02-07 Fmc Corporation Method of producing layered lithium metal oxides free of localized cubic spinel-like structural phases

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10418658B2 (en) 2014-12-01 2019-09-17 Schott Ag Electrical storage system comprising a disc-shaped discrete element, discrete element, method for the production thereof, and use thereof
CN111684639A (zh) * 2018-01-16 2020-09-18 印制能源技术有限公司 薄膜式能量存储装置
EP3740995A4 (en) * 2018-01-16 2021-10-20 Printed Energy Pty Ltd THIN FILM-BASED ENERGY STORAGE DEVICES
TWI806957B (zh) * 2018-01-16 2023-07-01 澳大利亞商印製能源技術有限公司 薄膜式能量儲存裝置

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JP2017528865A (ja) 2017-09-28
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