US20150340252A1 - Resist removing apparatus and method for removing resist - Google Patents

Resist removing apparatus and method for removing resist Download PDF

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Publication number
US20150340252A1
US20150340252A1 US14/614,990 US201514614990A US2015340252A1 US 20150340252 A1 US20150340252 A1 US 20150340252A1 US 201514614990 A US201514614990 A US 201514614990A US 2015340252 A1 US2015340252 A1 US 2015340252A1
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United States
Prior art keywords
main portion
wafer
supply
resist
nozzle
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Abandoned
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US14/614,990
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English (en)
Inventor
Hisayuki Saeki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Assigned to MITSUBISHI ELECTRIC CORPORATION reassignment MITSUBISHI ELECTRIC CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SAEKI, HISAYUKI
Publication of US20150340252A1 publication Critical patent/US20150340252A1/en
Priority to US15/895,164 priority Critical patent/US10388542B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Definitions

  • the present invention relates to an apparatus for removing a resist of a semiconductor wafer and a method for removing the resist.
  • the nozzle is structured to have a supply surface having a shape wider than the surface of the semiconductor wafer to reliably cover the entire surface of the semiconductor wafer, and a distance between the supply surface of the nozzle and the surface of the semiconductor wafer can be adjusted within a range of 1.0 mm or less.
  • the nozzle in the conventional resist removing apparatus has the above-mentioned structure to improve a removal rate and uniformity upon removal of a resist, to thereby sufficiently remove the resist.
  • a semiconductor wafer (hereinafter abbreviated as a “sectional recession wafer”) having a sectional recession structure in which the semiconductor wafer is hollowed out to leave a few millimeters of a peripheral portion and only the inside thereof is polished has been recently developed.
  • the sectional recession wafer has a structure having a main portion that is a recessed portion being polished and a protruding peripheral portion that protrudes along the periphery of the main portion at a position higher than the surface of the main portion.
  • the sectional recession wafer having such structure is disclosed as a “wafer manufactured in a TAIKO (trademark) process” in Japanese Patent Application Laid-Open No. 2007-335659.
  • the main portion of such sectional recession wafer is substantially the wafer portion, so that a resist is formed on the surface of the main portion. Therefore, in a case where the conventional resist removing apparatus is used to remove the resist formed on the surface of the main portion of the sectional recession wafer inside the protruding peripheral portion, the protruding peripheral portion (height of approximately 0.725 mm) makes it substantially impossible to adjust the distance between the surface of the main portion and the supply surface of the nozzle within the range of 1.0 mm or less.
  • the distance between the surface of the main portion and the supply surface inevitably exceeds 1.0 mm because the supply surface of the nozzle is needed to be disposed above the protruding peripheral portion (approximately 0.5 mm above) of the sectional recession wafer without reliably coming in contact with the protruding peripheral portion.
  • the distance between the surface of the main portion of the sectional recession wafer and the supply surface of the nozzle inevitably exceeds 1.0 mm in the conventional resist removing apparatus, resulting in a decrease in the removal rate and in-plane uniformity upon the removal of the resist formed on the surface of the main portion of the sectional recession wafer. This leads to the problem that the resist cannot be sufficiently removed.
  • a resist removing apparatus of the present invention is a resist removing apparatus for a wafer having a main portion and a protruding peripheral portion that is formed along a periphery of the main portion and protrudes at a position higher than a surface of the main portion, in which a resist is formed on the surface of the main portion.
  • the resist removing apparatus includes a nozzle having, as a bottom, a supply surface provided with a supply opening for an ozone solution in the center of the supply surface, and the nozzle has a supply portion structure including the supply surface formed to face the surface of the main portion in a non-contact state without coming in contact with the protruding peripheral portion in a wafer inner space formed between the protruding peripheral portion and the surface of the main portion.
  • the resist removing apparatus of the present invention has the characteristic above, so that the supply surface can be disposed in the close distance of less than or equal to 1.0 mm, for example, to face the surface of the main portion of the wafer having the protruding peripheral portion.
  • the ozone solution is supplied from the supply opening to remove the resist from the surface of the main portion, the removal rate and the uniformity upon the removal of the resist can be improved.
  • a method for removing a resist of the present invention is a method for removing a resist from a wafer having a main portion and a protruding peripheral portion that is formed along a periphery of the main portion and protrudes at a position higher than a surface of the main portion, in which a resist is formed on the surface of the main portion.
  • the method for removing a resist includes steps (a) to (c) below.
  • the step (a) prepares a nozzle having a supply surface provided with a supply opening for an ozone solution in the center of the supply surface.
  • the nozzle has a supply portion structure including the supply surface formed to face the surface of the main portion in a non-contact state without coming in contact with the protruding peripheral portion in a wafer inner space formed between the protruding peripheral portion and the surface of the main portion.
  • the step (b) disposes the supply portion structure over the surface of the main portion such that a distance between the supply surface and the surface of the main portion is less than or equal to 1.0 mm in the wafer inner space.
  • the step (c) supplies the ozone solution from the supply opening to remove the resist from the surface of the main portion.
  • the method for removing a resist of the present invention includes the step (b) of disposing the supply surface in the close distance of less than or equal to 1.0 mm from the surface of the main portion of the wafer having the protruding peripheral portion and the step (c) of removing the resist from the surface of the main portion, so that the removal rate and the uniformity of the resist can be improved at the time of performing the step (c).
  • FIG. 1 is a cross-sectional view showing a structure of a nozzle of a resist removing apparatus according to a first preferred embodiment of the present invention
  • FIG. 2 is a cross-sectional view showing a structure of a nozzle of a resist removing apparatus according to a second preferred embodiment of the present invention.
  • FIG. 3 is a cross-sectional view showing a structure of a conventional resist removing apparatus.
  • FIG. 3 is a cross-sectional view showing a structure of a conventional resist removing apparatus that removes a resist formed on a surface of a semiconductor wafer with a nozzle for supplying ozone water.
  • the conventional resist removing apparatus includes a nozzle 50 that supplies the ozone water being one of ozone solutions from a supply opening 61 provided in the center of the nozzle 50 .
  • a sectional recession wafer 1 that is a semiconductor wafer having the resist to be removed is formed of a wafer main portion 1 a and a wafer peripheral portion 1 b (protruding peripheral portion), the wafer main portion 1 a being a recessed portion inside, the wafer peripheral portion 1 b being formed along a periphery of the wafer main portion 1 a and provided to protrude at a position higher than a surface of the wafer main portion 1 a .
  • the sectional recession wafer 1 is disposed on an adsorption stage 4 .
  • the entire sectional recession wafer 1 (wafer main portion 1 a +wafer peripheral portion 1 b ) is formed to be circular having a diameter of 200 mm in plan view.
  • the wafer main portion 1 a is formed to be circular having a diameter of 194 to 195 mm in plan view.
  • the wafer main portion la is set to have a thickness of 0.04 to 0.05 mm
  • the wafer peripheral portion lb is set to have a formation height of 0.725 mm
  • the nozzle 50 in the conventional resist removing apparatus has a structure including a supply surface 60 having a shape greater than the surface of the sectional recession wafer 1 (wafer main portion 1 a +wafer peripheral portion 1 b ) to reliably cover the entire surface of the sectional recession wafer 1 similarly to the case of the general semiconductor wafer.
  • the wafer main portion 1 a of the sectional recession wafer 1 is substantially the wafer portion, so that a resist 2 is selectively formed on the surface of the wafer main portion 1 a .
  • the wafer peripheral portion 1 b is formed to protrude at the position higher than the surface of the wafer main portion 1 a , so that a wafer inner space 10 is provided between the wafer peripheral portion 1 b and the surface of the wafer main portion 1 a.
  • the wafer peripheral portion 1 b makes it substantially impossible to adjust the distance between the surface of the wafer main portion 1 a and the supply surface 60 of the nozzle 50 within the range of 1.0 mm or less.
  • the supply surface 60 cannot be disposed in the wafer inner space 10 and thus the distance between the surface of the wafer main portion 1 a and the supply surface 60 inevitably exceeds 1.0 mm because the supply surface 60 of the nozzle 50 is needed to be disposed above the wafer peripheral portion 1 b (approximately 0.5 mm above) of the sectional recession wafer 1 without coming in contact with the wafer peripheral portion 1 b as described above.
  • FIG. 1 is a cross-sectional view showing a structure of a nozzle of a resist removing apparatus according to a first preferred embodiment of the present invention.
  • the resist removing apparatus of the first preferred embodiment includes a nozzle 3 A having an optimal structure for removing the resist 2 formed on the surface of the wafer main portion 1 a of the sectional recession wafer 1 .
  • the nozzle 3 A has a tapered structure in cross section in the center thereof that expands outwardly from the center down from the middle, and the nozzle 3 A also has, as the bottom, a supply surface 30 provided with a supply opening 31 that is circular in plan view.
  • the nozzle 3 A as a whole is formed into the substantially cylindrical structure having the supply surface 30 with the supply opening 31 as the bottom surface.
  • the supply surface 30 is slightly narrower than the surface of the wafer main portion 1 a and also has a shape that fits in the surface of the wafer main portion 1 a .
  • the wafer main portion 1 a of the sectional recession wafer 1 is formed into a circular shape with a surface shape having a diameter of 194 to 195 mm while a surface shape of the supply surface 30 with the supply opening 31 is formed into a circular shape having a diameter of approximately 190 mm.
  • the nozzle 3 A is brought close to the surface (region for forming the resist 2 ) of the wafer main portion 1 a , whereby the supply surface 30 can be disposed in the wafer inner space 10 .
  • the supply surface 30 of the nozzle 3 A can be disposed in a close distance of less than or equal to 1.0 mm from the surface of the wafer main portion 1 a in the wafer inner space 10 .
  • the nozzle 3 A in the resist removing apparatus of the first preferred embodiment is characterized to have, as an overall structure, a supply portion structure including the supply surface 30 that is formed to face the surface of the wafer main portion la in the close distance in a non-contact state.
  • a description is given next of a method for removing a resist that is a method for removing the resist 2 formed on the surface of the wafer main portion 1 a of the sectional recession wafer 1 with the resist removing apparatus of the first preferred embodiment shown in FIG. 1 .
  • the resist 2 is a thin film at a negligible level ( ⁇ m order) compared to 1.0 mm, and thus the description is given while neglecting the thickness of the resist 2 for the sake of description.
  • the nozzle 3 A having the supply surface 30 provided with the supply opening 31 for ozone water in the center of the supply surface 30 is prepared.
  • the nozzle 3 A has the supply portion structure in which the supply surface 30 is formed in the wafer inner space 10 to face the surface of the wafer main portion 1 a in the close distance in the non-contact state without coming in contact with the wafer peripheral portion 1 b.
  • a step (b) while the center of the supply surface 30 and the center of the wafer main portion 1 a coincide with each other in plan view, the supply surface 30 is closely disposed over the surface of the wafer main portion 1 a (see FIG. 1 ) such that the distance between the supply surface 30 and the surface of the wafer main portion 1 a is less than or equal to 1.0 mm in the wafer inner space 10 (see FIG. 3 ).
  • the gap of approximately 2.0 mm between the (side) inner surface of the wafer peripheral portion 1 b and the (side) outer surface of the nozzle 3 A can be secured, so that the non-contact state between the nozzle 3 A and the wafer peripheral portion 1 b can be maintained with stability.
  • the gap between the inner surface of the wafer peripheral portion 1 b and the outer surface of the nozzle 3 A is at least approximately 1.0 mm.
  • the ozone water is supplied from the supply opening 31 to remove the resist 2 from the surface of the wafer main portion 1 a .
  • the supply surface 30 of the nozzle 3 A can be disposed over the substantially entire surface of the wafer main portion 1 a .
  • the supply surface 30 can be disposed to face the region of approximately 96% of the surface of the wafer main portion 1 a.
  • the method for removing the resist from the sectional recession wafer 1 with the resist removing apparatus of the first preferred embodiment includes the step (b) of disposing the supply surface 30 in the close distance of less than or equal to 1.0 mm from the surface of the wafer main portion 1 a and the step (c) of removing the resist 2 from the surface of the wafer main portion 1 a with the ozone water. Therefore, a removal rate and in-plane uniformity (the resist 2 can be uniformly removed) can be improved upon the removal of the resist 2 by performing the step (c).
  • the method for removing the resist with the resist removing apparatus of the first preferred embodiment can sufficiently remove the resist 2 formed on the surface of the wafer main portion 1 a , allowing for improvements in yields and extended lifetime of a semiconductor device formed on the sectional recession wafer 1 .
  • the nozzle 3 A preferably has a shape in which the supply surface 30 covers the region of at least 90% of the wafer main portion 1 a to supply the resist 2 with the ozone water from the supply opening 31 almost uniformly.
  • the supply surface 30 has the nozzle shape that is too small for the wafer main portion 1 a , it is substantially difficult to achieve the effects.
  • the nozzle 3 A used in the resist removing apparatus of the first preferred embodiment is formed as a whole into the columnar structure having the supply surface 30 as the bottom surface, so that a relatively simple structure can dispose the supply surface 30 in the close distance from the surface of the wafer main portion 1 a of the sectional recession wafer 1 .
  • FIG. 2 is a cross-sectional view showing a structure of a nozzle of a resist removing apparatus according to a second preferred embodiment of the present invention.
  • the resist removing apparatus of the second preferred embodiment includes a nozzle 3 B having an optimal structure for removing the resist 2 formed on the surface of the wafer main portion 1 a of the sectional recession wafer 1 .
  • the structure of the nozzle 3 B will be specifically described below.
  • the nozzle 3 B has, as the bottom, a supply surface 32 provided with the supply opening 31 for the ozone water in the center of the supply surface 32 .
  • the nozzle 3 B has a lower portion 3 L formed in a cylindrical structure that has the supply surface 32 with the supply opening 31 as the bottom surface similarly to the nozzle 3 A.
  • the supply surface 32 similar to the supply surface 30 of the first preferred embodiment is narrower than the surface of the wafer main portion 1 a and also has a shape that fits in the surface of the wafer main portion 1 a .
  • an upper portion 3 U of the nozzle 3 B is formed into a planar shape that is greater than the planar shape of the entire sectional recession wafer 1 (wafer main portion 1 a +wafer peripheral portion 1 b ). Therefore, as shown in FIG. 2 , the nozzle 3 B has a cross-sectional shape having a step in which the upper portion 3 U protrudes more outward than the lower portion 3 L.
  • the nozzle 3 B is brought close to the surface (region for forming the resist 2 ) of the wafer main portion 1 a in a state where the center of the wafer main portion 1 a and the center of the supply surface 32 coincide with each other in plan view, so that the supply surface 32 can be closely disposed in the wafer inner space 10 .
  • the height of the lower portion 3 L of the nozzle 3 B is set such that the bottom surface of the upper portion 3 U of the nozzle 3 B does not come in contact with the tip portion of the wafer peripheral portion 1 b .
  • the upper portion 3 U and the lower portion 3 L are each formed with a thickness of approximately 5 mm
  • the nozzle 3 B in the resist removing apparatus of the second preferred embodiment is characterized to have the lower portion 3 L having a supply portion structure including the supply surface 32 that is formed to face the surface of the wafer main portion 1 a in a non-contact state.
  • a method for removing a resist with the resist removing apparatus of the second preferred embodiment shown in FIG. 2 performs the steps (a) to (c) similarly to the method for removing a resist of the first preferred embodiment.
  • the method is performed similarly to that in the first preferred embodiment except for that the supply portion structure (entire nozzle 3 A) having the supply surface 30 is substituted by the supply portion structure (lower portion 3 L of the nozzle 3 B) having the supply surface 32 .
  • the nozzle 3 B used in the resist removing apparatus of the second preferred embodiment has the lower portion 3 L formed in the columnar structure having the supply surface 32 as the bottom surface, so that a relatively simple structure can also dispose the supply surface 32 in the close distance from the wafer main portion 1 a of the sectional recession wafer 1 while the structure of the upper portion 3 U is set arbitrarily.
  • the resist removing apparatus of the second preferred embodiment can improve the removal rate and the in-plane uniformity upon the removal of the resist 2 similarly to the first preferred embodiment.
  • the nozzle 3 A of the first preferred embodiment has the more simple structure and does not suffer damage due to a secular variation unlike the peripheral region of the upper portion 3 U above the wafer peripheral portion 1 b in the second embodiment.
  • a material for the nozzle 3 A in the resist removing apparatus of the first preferred embodiment and the nozzle 3 B in the resist removing apparatus of the second preferred embodiment is conceivably a resin, a quartz, or the like.
  • the modification of the first and second preferred embodiments uses the titanium as the constituent material for the nozzle 3 A and the nozzle 3 B, and thus resistance to the ozone water (resistance to ozone solution) can be improved upon removal of a resist and the distance between the nozzle 3 A ( 3 B) and the wafer main portion 1 a can be accurately controlled when the supply surface 30 ( 32 ) of the nozzle 3 A ( 3 B) is disposed in the close distance from the surface of the wafer main portion 1 a.
  • the material other than the titanium, for example, the resin is used as the constituent material for the nozzle 3 A and the 3 B
  • the supply surface 30 ( 32 ) is etched by the ozone water (ozone solution) upon the removal of the resist 2 and is oxidized, to thereby fail to maintain the uniform surface shape, resulting in deformation or deterioration.
  • the modification that uses the titanium having high resistance to the ozone water as the constituent material for the nozzle 3 A ( 3 B) is adopted to eliminate the concerns to improve the resistance to the ozone water.
  • the effect of resistance to the ozone water is also expected in a case where the quartz is used as the constituent material for the nozzle 3 A.
  • the distance (proximity distance) between the supply surface 30 ( 32 ) of the nozzle 3 A ( 3 B) and the surface of the wafer main portion 1 a can be accurately measured because the titanium has light transmitting properties superior to the quartz or the like.
  • the proximity distance is measured all the time to control to accurately maintain the proximity distance at a constant value based on the measurement result, thereby achieving the effect of accurately controlling the proximity distance.
US14/614,990 2014-05-26 2015-02-05 Resist removing apparatus and method for removing resist Abandoned US20150340252A1 (en)

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US15/895,164 US10388542B2 (en) 2014-05-26 2018-02-13 Resist removing apparatus and method for removing resist

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JP2014107763A JP6296899B2 (ja) 2014-05-26 2014-05-26 レジスト除去装置及びレジスト除去方法
JP2014-107763 2014-05-26

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JP (1) JP6296899B2 (ja)
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US20060112974A1 (en) * 2001-08-31 2006-06-01 Yoichi Isago Methods for cleaning a substrate

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US20180174867A1 (en) 2018-06-21
US10388542B2 (en) 2019-08-20
JP2015225867A (ja) 2015-12-14
DE102015209444A1 (de) 2015-11-26
CN105280522A (zh) 2016-01-27
JP6296899B2 (ja) 2018-03-20
CN105280522B (zh) 2019-01-04

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