US20140370788A1 - Low surface roughness polishing pad - Google Patents

Low surface roughness polishing pad Download PDF

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Publication number
US20140370788A1
US20140370788A1 US13/917,422 US201313917422A US2014370788A1 US 20140370788 A1 US20140370788 A1 US 20140370788A1 US 201313917422 A US201313917422 A US 201313917422A US 2014370788 A1 US2014370788 A1 US 2014370788A1
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United States
Prior art keywords
polishing
polishing pad
mpa
substrate
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/917,422
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English (en)
Inventor
Jayakrishnan NAIR
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials Inc
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Priority to US13/917,422 priority Critical patent/US20140370788A1/en
Assigned to CABOT MICROELECTRONICS CORPORATION reassignment CABOT MICROELECTRONICS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NAIR, Jayakrishnan
Priority to PCT/US2014/040226 priority patent/WO2014200726A1/fr
Priority to KR1020157036537A priority patent/KR20160019465A/ko
Priority to EP14811299.8A priority patent/EP3007858A4/fr
Priority to JP2016519532A priority patent/JP2016524549A/ja
Priority to SG11201508452VA priority patent/SG11201508452VA/en
Priority to CN201480024087.4A priority patent/CN105163907B/zh
Priority to TW103119535A priority patent/TWI542442B/zh
Publication of US20140370788A1 publication Critical patent/US20140370788A1/en
Abandoned legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped

Definitions

  • CMP Chemical-mechanical polishing
  • the manufacture of semiconductor devices generally involves the formation of various process layers, selective removal or patterning of portions of those layers, and deposition of yet additional process layers above the surface of a semiconducting substrate to form a semiconductor wafer.
  • the process layers can include, by way of example, insulation layers, gate oxide layers, conductive layers, and layers of metal or glass, etc. It is generally desirable in certain steps of the wafer process that the uppermost surface of the process layers be planar, i.e., flat, for the deposition of subsequent layers.
  • CMP is used to planarize process layers wherein a deposited material, such as a conductive or insulating material, is polished to planarize the wafer fix subsequent process steps.
  • a wafer is mounted upside down on a carrier in a CMP tool.
  • a force pushes the carrier and the wafer downward toward a polishing pad.
  • the carrier and the wafer are rotated above the rotating polishing pad on the CMP tool's polishing table.
  • a polishing composition (also referred to as a polishing slurry) generally is introduced between the rotating wafer and the rotating polishing pad during the polishing process.
  • the polishing composition typically contains a chemical that interacts with or dissolves portions of the uppermost wafer layer(s) and an abrasive material that physically removes portions of the layer(s).
  • the wafer and the polishing pad can be rotated in the same direction or in opposite directions, whichever is desirable for the particular polishing process being carried out.
  • the carrier also can oscillate across the polishing pad on the polishing table.
  • Polishing pads typically have an initial surface roughness of greater than 15 microns. During the polishing of several substrates with the same pad, normal wear on the pad surface results in a change in the surface roughness of the pad. As the surface roughness of the pad changes, contact between the pad surface and a substrate being polished changes, and thus the polishing rate can change. As a result, the amount of time required for polishing the substrates to achieve desired surface properties, such as planarity, varies during a production run. Variances from uniformity between substrates can therefore result.
  • the invention provides a polishing pad comprising a polishing pad body comprising a polishing surface, wherein the polishing body comprises pores, and wherein the polishing surface has a surface roughness of about 0.1 ⁇ m to about 10 ⁇ m.
  • the invention also provides a method of polishing a substrate, which method comprises (i) providing a substrate to be polished, (ii) contacting the substrate with the aforesaid polishing pad and a polishing composition, and (iii) moving the substrate relative to the polishing pad with the polishing composition therebetween to abrade at least a portion of the substrate to polish the substrate.
  • FIG. 1 is a scanning electron microscope image of the surface of a polishing pad in accordance with an embodiment of the invention.
  • FIG. 2 is a scanning electron microscope image of the surface of a polishing pad in accordance with an embodiment of the invention.
  • FIG. 3 is a scanning electron microscope image of the surface of a conventional polishing pad.
  • FIG. 4 is a graphical representation of the silicon oxide removal rate versus the number of wafers polished using a polishing pad in accordance with an embodiment of the invention in comparison with a conventional polishing pad.
  • the invention provides a polishing pad comprising a polishing pad body comprising a polishing surface, wherein the polishing pad body comprises pores, and wherein the polishing surface has a surface roughness of about 0.1 ⁇ m to about 10 ⁇ m.
  • the polishing pad body can have any suitable dimensions.
  • the polishing pad body is circular in shape (as is used in rotary polishing tools) or is produced as a looped linear belt (as is used in linear polishing tools).
  • the polishing pad both is circular.
  • the polishing pad body can comprise, consist essentially of, or consist of any suitable material.
  • the polishing pad body comprises, consists essentially of, or consists of a polymer resin.
  • the polymer resin can be any suitable polymer resin.
  • the polymer resin is selected from the group consisting of thermoplastic elastomers, thermoset polymers, polyurethanes (e.g., thermoplastic polyurethanes), polyolefins (e.g., thermoplastic polyolefins), polycarbonates, polyvinylalcohols, nylons, elastomeric rubbers, elastomeric polyethylenes, polytetrafluoroethylenes, polyethyleneterephthalates, polyimides, polyaramides, polyarylenes, polyacrylates, polystyrenes, polymethylmethacrylates, copolymers thereof, and mixtures thereof.
  • the polymer resin is a polyurethane, more preferably a thermoplastic polyurethane.
  • the polishing pad body comprises pores.
  • the pores can have an average pore diameter of about 2 ⁇ m or more, about 3 ⁇ m or more, about 4 ⁇ m or more, about 5 ⁇ m or more, about 6 ⁇ m or more, about 7 ⁇ m or more, about 7 ⁇ m or more, about 8 ⁇ m or more, about 9 ⁇ m or more, about 10 ⁇ m or more, about 15 ⁇ m or more, about 20 ⁇ m or more, about 25 ⁇ m or more, about 30 ⁇ m or more, about 35 ⁇ m or more, about 40 ⁇ m or more, about 45 ⁇ m or more, or about 50 ⁇ m or more.
  • the pores can have an average pore diameter of about 150 ⁇ m or less, about 125 ⁇ m or less, about 100 ⁇ m or less, about 90 ⁇ m or less, about 80 ⁇ m or less, about 70 ⁇ m or less, about 60 ⁇ m or less, about 50 ⁇ m or less, about 45 ⁇ m or less, about 40 ⁇ m or less, about 35 ⁇ m or less, about 30 ⁇ m or less, about 25 ⁇ m or less, about 20 ⁇ m or less, about 15 ⁇ m or less, or about 10 ⁇ m or less.
  • the pores can have an average pore diameter bounded by any two of the endpoints recited for the average pore diameter.
  • the polishing pad body can have an average pore diameter of about 2 ⁇ m to about 150 ⁇ m, about 3 ⁇ m to about 125 ⁇ m, about 4 ⁇ m to about 100 ⁇ m, about 5 ⁇ m to about 90 ⁇ m, about 5 ⁇ m to about 80 ⁇ m, about 5 ⁇ m to about 70 ⁇ m, about 5 ⁇ m to about 60 ⁇ m, about 5 ⁇ m to about 50 ⁇ m, about 5 ⁇ m to about 45 ⁇ m, about 5 ⁇ m to about 40 ⁇ m, about 5 ⁇ m to about 35 ⁇ m, about 5 ⁇ m to about 30 ⁇ m, about 5 ⁇ m to about 25 ⁇ m, about 5 ⁇ m to about 20 ⁇ m, about 5 ⁇ m to about 15 ⁇ m, about 5 ⁇ m to about 10 ⁇ m, about 10 ⁇ m to about 50 ⁇ m, about 10 ⁇ m to about 45 ⁇ m, about 10 ⁇ m to about 40 ⁇ m, about 10 ⁇ m to about 35 ⁇ m,
  • the polishing surface can have a surface roughness of about 0.1 ⁇ m or more, about 0.2 ⁇ m or more, about 0.3 ⁇ m or more, about 0.4 ⁇ m or more, about 0.5 ⁇ m or more, about 0.6 ⁇ m or more, about 0.7 ⁇ m or more, about 0.8 ⁇ m or more, about 0.9 ⁇ m or more, or about 1 ⁇ m or more.
  • the polishing surface can have a surface roughness of about 4 ⁇ m or less, about 3.8 ⁇ m or less, about 3.6 ⁇ m or less, about 3.4 ⁇ m or less, about 3.2 ⁇ m or less, about 3 ⁇ m or less, about 2.8 ⁇ m or less, about 4 ⁇ m or less, about 2.6 ⁇ m or less, about 2.4 ⁇ m or less, about 2.2 ⁇ m or less, about 2 ⁇ m or less about 1.8 ⁇ m or less, or about 1.6 ⁇ m or less.
  • the polishing surface can have a surface roughness bounded by any two of the endpoints recited for the average pore diameter.
  • the polishing pad body can have a surface roughness of about 0.1 ⁇ m to about 4 ⁇ m, about 0.1 ⁇ m to about 4 ⁇ m, about 0.1 ⁇ m to about 4 ⁇ m, about 0.1 ⁇ m to about 3.8 ⁇ m, about 0.1 ⁇ m to about 3.6 ⁇ m, about 0.1 ⁇ m to about 3.4 ⁇ m, about 0.1 ⁇ m to about 3.2 ⁇ m, about 0.1 ⁇ m to about 3 ⁇ m, about 0.1 ⁇ m to about 2.8 ⁇ m, about 0.1 ⁇ m to about 2.6 ⁇ m, about 0.1 ⁇ m to about 2.4 ⁇ m, about 0.1 ⁇ m to about 2.2 ⁇ m, about 0.1 ⁇ m to about 2 ⁇ m, about 0.1 ⁇ m to about 1.8 ⁇ m, about 0.1 ⁇ m to about 1.6 ⁇ m, about 0.5 ⁇ m to about 4 ⁇ m, about 0.5 ⁇ m to about 3.5 ⁇ m, about 0.5 ⁇ m to
  • the surface roughness can be expressed as the average surface roughness as determined at several regions of the polishing surface.
  • a non-limiting example of a suitable method for determining the surface roughness of the polishing surface or of a region thereof is ISO13565.
  • the polishing pad body can be produced using any suitable technique, many of which are known in the art.
  • the polishing pad can be formed by methods such as casting and extrusion.
  • the polymer resin may be a thermoplastic material which is heated to a temperature at which it will flow and is then formed into a desired shape by casting extrusion.
  • the polymer resin may provide a porous structure by its natural configuration. In other embodiments, the porous structure may be introduced through the use of various production techniques known in the art (e.g., foaming, blowing, and the like).
  • Representative methods of providing a porous structure comprising closed-cell pores include foaming processes such as a mucell process, a phase inversion process, a spinodal or bimodal decomposition process, or a pressurized gas injection process, all of which are well known in the art.
  • a representative method providing a porous structure comprising open-cell pores comprises sintering particles of a thermoplastic polymer, such as a polyurethane, to provide an open-cell porous structure.
  • the polishing surface can be produced using any suitable method.
  • the polishing surface is produced by skiving the polishing pad body.
  • the polishing pad body can have a storage modulus of elasticity at 30° C. of about 5 MPa or more, 10 MPa or more, 20 MPa or more, 30 MPa or more, about 40 MPa or more, about 50 MPa or more, about 60 MPa or more, about 70 MPa or more, about 80 MPa or more, about 90 MPa or more, about 100 MPa or more, about 200 MPa or more, about 300 MPa or more, about 400 MPa or more, or about 500 MPa or more.
  • the polishing pad body can have a storage modulus of elasticity at 30° C.
  • the polishing pad body can have a storage modulus of elasticity a 30° C. bounded by any two of the endpoints recited for the average pore diameter.
  • the polishing pad body can have a storage modulus of elasticity at 30° C.
  • a polishing pad in accordance with the invention can be used alone or optionally can be used as one layer of a multi-layer stacked polishing pad.
  • the inventive polishing pad can be used in combination with a subpad.
  • the subpad can be any suitable subpad. Suitable subpads include polyurethane foam subpads, impregnated felt subpads, microporous polyurethane subpads, or sintered urethane subpads.
  • the subpad typically is softer than the polishing pad of the invention and therefore is more compressible than the polishing pad. In some embodiments, the subpad is harder and is less compressible than the polishing pad.
  • the subpad optionally comprises grooves, channels, hollow sections, and the like.
  • an intermediate backing layer such as a polyethyleneterephthalate film, coextensive with and between the polishing pad and the subpad.
  • the polishing pad is prepared by sandwiching the polishing pad body between two layers of a backing material.
  • the resulting sandwiched polishing pad body can then be skived to produce two polishing pads.
  • the sandwiched polishing pad body can be produced by curing a prepolymer, for example, a thermoplastic polyurethane, between two backing layers.
  • the backing material can be any suitable backing material and can comprise a polymeric sheet.
  • the backing material can comprise a subpad as described herein.
  • the sandwiched polishing pad can be prepared in the form of an elongated sheet which is then skived and cut into segments to form the polishing pad in a continuous process.
  • the surface of the inventive polishing pad comprises open pores resulting from the formation of the polishing surface by skiving of the polishing pad body.
  • the surface roughness of the polishing surface refers to the surface roughness of the polishing surface exclusive of the pores.
  • FIG. 3 illustrates the surface of a conventional polishing pad for purposes of comparison.
  • the surface roughness can be measured with an optical type surface roughness tester, such as a three-dimensional surface profiler, laser scanning microscope, electron beam surface profiler, a contact type surface roughness tester, such as a surface roughness tester with contact stylus, and the like.
  • an optical type surface roughness tester such as a three-dimensional surface profiler, laser scanning microscope, electron beam surface profiler, a contact type surface roughness tester, such as a surface roughness tester with contact stylus, and the like.
  • the surface roughness is determined according to ISO 13565.
  • the invention further provides a method of polishing a substrate, which method comprises (i) providing a substrate to be polished, (ii) contacting the substrate with the inventive polishing pad described herein and a polishing composition, and (iii) moving the substrate relative to the polishing pad, with the polishing composition therebetween, to abrade at least a portion of the substrate to polish the substrate.
  • the polishing composition can be any suitable polishing composition.
  • the polishing composition typically comprises an aqueous carrier, a pH adjustor, and optionally an abrasive.
  • the polishing composition optionally can further comprise one or more oxidizing agents, organic acids, complexing agent, pH buffers, surfactants, corrosion inhibitors, anti-foaming agents, biocides, and the like.
  • This example demonstrates the removal rate for silicon oxide exhibited by the inventive polishing pad as a function of the number of substrates polished therewith.
  • Similar substrates comprising a blanket layer of silicon oxide derived from tetraethylorthosilicate were polished with a polishing pad in accordance with an embodiment of the invention and with a conventional polishing pad in conjunction with a polishing composition.
  • the inventive polishing pad was prepared using a thermoplastic polyurethane resin (the 87 A thermoplastic polyurethane resin from Lubrizol, Wickcliffe, Ohio) and had a Shore D hardness of 42 D, an average pore diameter of 25-45 ⁇ m, an average surface roughness as measured by a confocal microscope of 1.4 ⁇ m, and a storage modulus of elasticity (E′) as shown in the Table.
  • the comparative polishing pad was a commercial thermoplastic polyurethane pad having a milled surface and an average surface roughness as measured by a confocal microscope of 5.6 ⁇ m.
  • the removal rate was determined for each substrate, and the results are illustrated graphically in FIG. 4 .
  • the inventive polishing pad exhibited a silicon oxide removal rate that stabilized at approximately 530 ⁇ /min after polishing approximately 40 substrates.
  • the comparative polishing pad exhibited a silicon oxide removal rate that increased during polishing of successive substrates and approached approximately 370 ⁇ /min after polishing over 200 substrates.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
US13/917,422 2013-06-13 2013-06-13 Low surface roughness polishing pad Abandoned US20140370788A1 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US13/917,422 US20140370788A1 (en) 2013-06-13 2013-06-13 Low surface roughness polishing pad
PCT/US2014/040226 WO2014200726A1 (fr) 2013-06-13 2014-05-30 Tampon de polissage à faible rugosité de surface
KR1020157036537A KR20160019465A (ko) 2013-06-13 2014-05-30 표면 조도가 낮은 연마 패드
EP14811299.8A EP3007858A4 (fr) 2013-06-13 2014-05-30 Tampon de polissage à faible rugosité de surface
JP2016519532A JP2016524549A (ja) 2013-06-13 2014-05-30 低表面粗さ研磨パッド
SG11201508452VA SG11201508452VA (en) 2013-06-13 2014-05-30 Low surface roughness polishing pad
CN201480024087.4A CN105163907B (zh) 2013-06-13 2014-05-30 低表面粗糙度的抛光垫
TW103119535A TWI542442B (zh) 2013-06-13 2014-06-05 低表面粗糙度之拋光墊及其用法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/917,422 US20140370788A1 (en) 2013-06-13 2013-06-13 Low surface roughness polishing pad

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US20140370788A1 true US20140370788A1 (en) 2014-12-18

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US13/917,422 Abandoned US20140370788A1 (en) 2013-06-13 2013-06-13 Low surface roughness polishing pad

Country Status (8)

Country Link
US (1) US20140370788A1 (fr)
EP (1) EP3007858A4 (fr)
JP (1) JP2016524549A (fr)
KR (1) KR20160019465A (fr)
CN (1) CN105163907B (fr)
SG (1) SG11201508452VA (fr)
TW (1) TWI542442B (fr)
WO (1) WO2014200726A1 (fr)

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US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
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US10513007B2 (en) 2017-05-29 2019-12-24 Skc Co., Ltd. Porous polyurethane polishing pad and process for preparing a semiconductor device by using the same
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US10537974B2 (en) 2014-10-17 2020-01-21 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US11446788B2 (en) 2014-10-17 2022-09-20 Applied Materials, Inc. Precursor formulations for polishing pads produced by an additive manufacturing process
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11524384B2 (en) 2017-08-07 2022-12-13 Applied Materials, Inc. Abrasive delivery polishing pads and manufacturing methods thereof
US11685014B2 (en) 2018-09-04 2023-06-27 Applied Materials, Inc. Formulations for advanced polishing pads
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US11806829B2 (en) 2020-06-19 2023-11-07 Applied Materials, Inc. Advanced polishing pads and related polishing pad manufacturing methods
US11813712B2 (en) 2019-12-20 2023-11-14 Applied Materials, Inc. Polishing pads having selectively arranged porosity
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
US11964359B2 (en) 2015-10-30 2024-04-23 Applied Materials, Inc. Apparatus and method of forming a polishing article that has a desired zeta potential
US11986922B2 (en) 2015-11-06 2024-05-21 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US12023853B2 (en) 2014-10-17 2024-07-02 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles

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EP3007858A4 (fr) 2017-03-08
JP2016524549A (ja) 2016-08-18
CN105163907A (zh) 2015-12-16
TWI542442B (zh) 2016-07-21
EP3007858A1 (fr) 2016-04-20
TW201501865A (zh) 2015-01-16
CN105163907B (zh) 2017-11-28
WO2014200726A1 (fr) 2014-12-18
KR20160019465A (ko) 2016-02-19

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