US20140346040A1 - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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US20140346040A1
US20140346040A1 US14/370,579 US201314370579A US2014346040A1 US 20140346040 A1 US20140346040 A1 US 20140346040A1 US 201314370579 A US201314370579 A US 201314370579A US 2014346040 A1 US2014346040 A1 US 2014346040A1
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electromagnets
processing space
high frequency
electromagnet
portion facing
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Akihiro Yokota
Etsuji Ito
Shinji Himori
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Assigned to TOKYO ELECTRON LIMITED reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HIMORI, SHINJI, ITO, ETSUJI, YOKOTA, AKIHIRO
Publication of US20140346040A1 publication Critical patent/US20140346040A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • the embodiments described herein pertain generally to a substrate processing apparatus of controlling a plasma density distribution by using a magnetic field.
  • a conventional magnetron plasma processing apparatus includes a dipole ring magnet formed of multiple columnar anisotropic segment magnets arranged in a ring shape at an outside of a chamber, and as shown in FIG. 11 , a uniform horizontal magnetic field B as a whole is formed by slightly deviating a direction of magnetization caused by the multiple columnar anisotropic segment magnets (see, for example, Patent Document 1).
  • FIG. 11 is a diagram (plane view) of the conventional magnetron plasma processing apparatus as viewed from above, and shows that a base end side of the direction of the magnetic field is indicated by N, a leading end side thereof is indicated by S, and positions rotated by 90° from N and S are respectively indicated by E and W.
  • the horizontal magnetic field B formed by the dipole ring magnet is directed only in one direction from N to S in the diagram. Further, in this magnetron plasma processing apparatus, the electric field is formed downward, so that the electrons travel from E to W by the drift motion by a Lorentz force. Consequently, plasma density is low on the E side and high on the W side, so that a plasma density distribution becomes non-uniform.
  • the dipole ring magnet is rotated in its circumferential direction to change the direction of the drift motion of electrons.
  • This magnetron etching apparatus 120 includes a processing chamber 121 , an upper electrode 122 and a lower electrode 123 provided to face each other in a vertical direction within the processing chamber 121 , a magnet 124 which has a substantially circular plate shape and is provided to be rotated above or at an outside of the upper electrode 122 , and a high frequency power supply 125 that applies a high frequency power to a space between the upper electrode 122 and the lower electrode 123 . Further, a wafer W is provided within the processing chamber 121 (see, for example, Patent Document 2).
  • the magnet 124 provided above or at the outside of the upper electrode 122 generates a magnetic field B along a surface of the wafer W within the processing chamber 121 .
  • the magnet 124 is rotated at a desired rotation speed by a driving device (not illustrated) such as a motor or the like in a horizontal plane parallel to a surface of the wafer W.
  • a driving device such as a motor or the like in a horizontal plane parallel to a surface of the wafer W.
  • the magnetic field B is formed to be intersected with an electric field E applied into a space within the processing chamber 121 .
  • this magnetron etching apparatus 120 when a time average is taken, plasma density becomes uniform above the wafer W, but at each moment, the plasma density is still non-uniform. Further, by a drift motion of charged particles, for example, electrons, caused by a Lorentz force, the plasma density and an etching speed (etching rate) on the surface of the wafer W decreases in one direction and an electric potential (V DC ) increases. That is, since the plasma density becomes non-uniform and an electric potential also becomes non-uniform, charged regions polarized positively and negatively are respectively formed at both ends of the wafer W (charge-up phenomenon).
  • V DC electric potential
  • a plasma processing apparatus that generates a magnetic field symmetric with respect to a central portion of the wafer W in a processing space.
  • a plasma processing apparatus 130 multiple permanent magnets 132 are arranged in multiple annular circles with respect to the central portion of the wafer W on an upper surface of a processing chamber 131 facing the wafer W, and a magnetic pole from each permanent magnet 132 toward the wafer W is adjusted.
  • a magnetic field B radially distributed from the central portion of the wafer W in the processing space is generated (see, for example, Patent Document 3).
  • Patent Document 1 Japanese Patent Publication No. 3375302
  • Patent Document 2 Japanese Patent Publication No. 3037848
  • Patent Document 3 Japanese Patent Publication No. 4107518
  • example embodiments provide a substrate processing apparatus capable of obtaining a magnetic field distribution that allows a plasma density distribution in a processing space to be optimized.
  • a substrate processing apparatus generates an electric field in a processing space between a lower electrode to which a high frequency power is applied and an upper electrode provided to face the lower electrode, and also performs a plasma process on a substrate mounted on the lower electrode with plasma generated by the electric field.
  • the substrate processing apparatus includes multiple electromagnets arranged on a top surface of the upper electrode opposite to the processing space. Further, each of the electromagnets is radially arranged with respect to a central portion of the upper electrode facing a central portion of the substrate.
  • the multiple electromagnets may be divided into multiple electromagnet groups, and in each of the electromagnet groups, intensity of a magnetic field generated by each of the electromagnets and/or a magnetic pole of each of the electromagnets may be controlled.
  • the multiple electromagnets may be divided into a first electromagnet group, a second electromagnet group, and a third electromagnet group.
  • the first electromagnet group may include the electromagnets facing the central portion of the substrate
  • the second electromagnet group may include the electromagnets facing a peripheral portion of the substrate
  • the third electromagnet group may include the electromagnets arranged on an outside of the second electromagnet group with respect to the central portion of the upper electrode without facing the substrate.
  • magnetic poles on the processing space side of the electromagnets belonging to the first electromagnet group may be identical to each other
  • magnetic poles on the processing space side of the electromagnets belonging to the second electromagnet group may be identical to each other
  • magnetic poles on the processing space side of the electromagnets belonging to the third electromagnet group may be identical to each other.
  • the electromagnets belonging to each of the first electromagnet group and the second electromagnet group may be spaced apart from each other at equal distances, and the electromagnets belonging to the third electromagnet group may be arranged in a circular ring shape around the central portion of the upper electrode.
  • Total magnetic flux generated by the electromagnets belonging to the third electromagnet group may be about 8 to 12 times greater than total magnetic flux generated by the electromagnets belonging to each of the first electromagnet group and the second electromagnet group.
  • Intensity of a magnetic field generated by each of the electromagnets and/or a magnetic pole of each of the electromagnets may be controlled depending on conditions of the plasma process to be performed on the substrate.
  • a substrate processing apparatus generates an electric field in a processing space between a lower electrode to which a high frequency power is applied and an upper electrode provided to face the lower electrode, and also performs a plasma process on a substrate mounted on the lower electrode with plasma generated by the electric field.
  • the substrate processing apparatus includes multiple electromagnets arranged on a top surface of the upper electrode on the opposite side of the processing space; a first high frequency power supply that is configured to supply a high frequency power having a first high frequency and is connected to the lower electrode; and a second high frequency power supply that is configured to supply a high frequency power having a second high frequency higher than the first high frequency and is connected to the lower electrode.
  • each of the electromagnets may not generate a magnetic field in the processing space.
  • each of the electromagnets may generate a magnetic field in the processing space.
  • a substrate processing apparatus generates an electric field in a processing space between a lower electrode to which a high frequency power is applied and an upper electrode provided to face the lower electrode, and also performs a TSV process of forming a through hole in a substrate with plasma generated from a fluorine-containing gas by the electric field.
  • the substrate processing apparatus includes multiple electromagnets arranged on a top surface of the upper electrode on the opposite side of the processing space. Further, each of the electromagnets may generate a magnetic field such that intensity of the magnetic field at an area facing a peripheral portion of the substrate in the processing space is greater than that of the magnetic field at an area facing a central portion of the substrate in the processing space.
  • multiple electromagnets are arranged on a top surface of an upper electrode opposite to a processing space in a substrate processing apparatus. Since each of the electromagnets are radially arranged with respect to a central portion of the upper electrode facing a central portion of a substrate, a magnetic field radially distributed with respect to the central portion of the substrate can be generated in the processing space. Further, by controlling a direction or a magnitude of an electric current flowing in each electromagnet, it is possible to easily control intensity or a magnetic flux direction of a magnetic field to be generated. As a result, it is possible to obtain a magnetic field distribution that allows a plasma density distribution in a processing space to be optimized.
  • FIG. 1A is a cross-sectional view schematically showing a configuration of a substrate processing apparatus in accordance with a first example embodiment.
  • FIG. 1B is a diagram schematically showing a configuration of the substrate processing apparatus in accordance with the present example embodiment, and shows an upper electrode of the substrate processing apparatus when viewed along a white arrow of FIG. 1A .
  • FIG. 2A is a diagram for explaining a drift motion of electrons caused by an electric field and a magnetic field generated in the substrate processing apparatus of FIG. 1A and FIG. 1B , and is a cross-sectional view of the substrate processing apparatus of FIG. 1A and FIG. 1B .
  • FIG. 2B is a diagram for explaining the drift motion of the electrons caused by the electric field and the magnetic field generated in the substrate processing apparatus of FIG. 1A and FIG. 1B , and shows an upper electrode of the substrate processing apparatus when viewed along a white arrow of FIG. 2A .
  • FIG. 3A is a diagram for explaining a relationship between a magnetic pole on a processing space side of each electromagnet and intensity of the magnetic field generated in a processing space.
  • FIG. 3B is a diagram for explaining a relationship between a magnetic pole on a processing space side of each electromagnet and intensity of a magnetic field generated in the processing space.
  • FIG. 3C is a diagram for explaining a relationship between a magnetic pole on a processing space side of each electromagnet and intensity of a magnetic field generated in the processing space.
  • FIG. 4A is a diagram for explaining a relationship between a magnetic pole on a processing space side of each electromagnet and intensity of a magnetic field generated in the processing space.
  • FIG. 4B is a diagram for explaining a relationship between a magnetic pole on a processing space side of each electromagnet and intensity of a magnetic field generated in the processing space.
  • FIG. 4C is a diagram for explaining a relationship between a magnetic pole on a processing space side of each electromagnet and intensity of a magnetic field generated in the processing space.
  • FIG. 5 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus in accordance with a second example embodiment.
  • FIG. 6A is a process diagram for explaining a TSV process a part of which is performed by the substrate processing apparatus in accordance with the present example embodiment.
  • FIG. 6B is a process diagram for explaining the TSV process a part of which is performed by the substrate processing apparatus in accordance with the present example embodiment.
  • FIG. 6C is a process diagram for explaining the TSV process a part of which is performed by the substrate processing apparatus in accordance with the present example embodiment.
  • FIG. 7A is a process diagram for explaining the TSV process a part of which is performed by the substrate processing apparatus in accordance with the present example embodiment.
  • FIG. 7B is a process diagram for explaining the TSV process a part of which is performed by the substrate processing apparatus in accordance with the present example embodiment.
  • FIG. 7C is a process diagram for explaining the TSV process a part of which is performed by the substrate processing apparatus in accordance with the present example embodiment.
  • FIG. 8A is a cross-sectional view schematically showing a configuration of a substrate processing apparatus in accordance with a third example embodiment.
  • FIG. 8B is a cross-sectional view schematically showing a configuration of the substrate processing apparatus in accordance with the third example embodiment, and shows an upper electrode of the substrate processing apparatus when viewed along a white arrow of FIG. 8A .
  • FIG. 9A is a graph showing an etching rate when the substrate processing apparatus of FIG. 8A and FIG. 8B performs an etching process on a wafer, and shows a case where a magnetic field is not generated within a processing space.
  • FIG. 9B is a graph showing an etching rate when the substrate processing apparatus of FIG. 8A and FIG. 8B performs the etching process on the wafer, and shows a case where a magnetic field in a radial shape is generated within the processing space.
  • FIG. 10A is a graph explaining a calculation result when a magnetic pole on a processing space side of each electromagnet is changed in a central portion facing group, a peripheral portion facing group, and an outer portion facing group in the substrate processing apparatus of FIG. 8A and FIG. 8B , and shows an etching rate distribution.
  • FIG. 10B is a graph explaining a calculation result when the magnetic pole on the processing space side of each electromagnet is changed in the central portion facing group, the peripheral portion facing group, and the outer portion facing group in the substrate processing apparatus of FIG. 8A and FIG. 8B and shows a magnetic flux density distribution.
  • FIG. 11 is a diagram showing a horizontal magnetic field in a conventional magnetron plasma processing apparatus.
  • FIG. 12 is a cross-sectional view schematically showing a configuration of a conventional magnetron plasma etching apparatus.
  • FIG. 13 is a cross-sectional view schematically showing a configuration of a conventional plasma processing apparatus that removes the non-uniformity in plasma density.
  • FIG. 1A and FIG. 1B schematically show configurations of the substrate processing apparatus in accordance with the present example embodiment.
  • FIG. 1A is a cross-sectional view of the substrate processing apparatus
  • FIG. 1B is a diagram showing an upper electrode of the substrate processing apparatus when viewed along a white arrow of FIG. 1A .
  • the substrate processing apparatus is configured to perform a plasma process, for example, a dry etching process, on a wafer for a semiconductor device (hereinafter, simply referred to as “wafer”) W as a substrate.
  • a plasma process for example, a dry etching process
  • a substrate processing apparatus 10 includes a cylinder-shaped chamber 11 (processing chamber) that accommodates therein the wafer W having a diameter of, for example, about 300 mm.
  • a cylinder-shaped susceptor 12 lower electrode
  • a ceiling portion of the chamber 11 facing the susceptor 12 , is configured as an upper electrode 13 .
  • a processing space S is formed between the susceptor 12 and the upper electrode 13 .
  • plasma is generated in the processing space S depressurized by a non-illustrated exhaust device, and a plasma process is performed on the wafer W mounted on the susceptor 12 with the plasma.
  • the susceptor 12 within the chamber 11 is connected to a first high frequency power supply 14 via a first matching unit 15 and to a second high frequency power supply 16 via a second matching unit 17 .
  • the first high frequency power supply 14 is configured to apply a high frequency power having a higher frequency of, for example, about 60 MHz to the susceptor 12
  • the second high frequency power supply 16 is configured to apply a high frequency power having a lower frequency of, for example, about 3.2 MHz to the susceptor 12 .
  • the susceptor 12 serves as a lower electrode.
  • the first matching unit 15 and the second matching unit 17 are configured to control impedance to allow the high frequency powers to be efficiently applied to the susceptor 12 , respectively.
  • a step-shaped portion is formed such that a central portion of the susceptor 12 protrudes upward in the drawing.
  • an electrostatic chuck (not illustrated), which is made of ceramic and has an electrostatic electrode plate therein, is provided.
  • the electrostatic chuck is configured to attract and hold the wafer W with a Coulomb force or a Johnsen-Rahbek force.
  • a focus ring 18 is mounted to surround the wafer W attracted to and held by the electrostatic chuck.
  • the focus ring 18 is made of silicon (Si) or silicon carbide (SiC), and is configured to extend a plasma distribution area in the processing space S to above the wafer W and also to above the focus ring 18 .
  • the ceiling portion of the chamber 11 facing the susceptor 12 with the processing space S interposed therebetween is connected to a processing gas inlet line 19 , and the processing gas inlet line 19 introduces a processing gas to the processing space S.
  • the processing gas is introduced into the processing space S through the processing gas inlet line 19 , and an electric field E is generated in a direction as indicated by a white arrow in the drawing, i.e., from the susceptor 12 toward the upper electrode 13 , within the processing space S by applying the high frequency powers to the susceptor 12 from the first high frequency power supply 14 and the second high frequency power supply 16 .
  • the electric field E generates plasma by exciting molecules or atoms of the introduced processing gas.
  • radicals in the plasma drift and move to the wafer W.
  • positive ions in the plasma are attracted toward the wafer W by applying the high frequency powers to the susceptor 12 from the first high frequency power supply 14 and the second high frequency power supply 16 , so that a plasma process is performed on this wafer W.
  • the substrate processing apparatus 10 includes multiple electromagnets 20 arranged in a substantially radial shape on a top surface 13 a of the upper electrode 13 opposite to the processing space S.
  • Each electromagnet 20 includes a rod-shaped yoke 20 a formed of an iron core and a coil 20 b which is formed of a conducting wire wound on a side surface of the yoke 20 a .
  • both ends of the coil 20 b are drawn out.
  • a value of an electric current or a direction of an electric current flowing in the coil 20 b of the electromagnet 20 is controlled by a controller (not illustrated), so that it is possible to selectively change the total magnetic flux or a direction of the magnetic flux generated by this electromagnet 20 .
  • the multiple electromagnets 20 are divided into a central portion facing group 21 (first electromagnet group) including the electromagnet 20 facing the central portion of the wafer W; a peripheral portion facing group 22 (second electromagnet group) including multiple electromagnets 20 which are arranged in a circular ring shape with respect to a central portion C of the upper electrode 13 (hereinafter, referred to as “upper electrode central portion C”) facing the central portion of the wafer W and face the peripheral portion of the wafer W; and an outer portion facing group (third electromagnet group) including multiple electromagnets 20 which are arranged in a circular ring shape with respect to the upper electrode central portion C and arranged at an outside of the peripheral portion facing group 22 without facing the wafer W.
  • first electromagnet group including the electromagnet 20 facing the central portion of the wafer W
  • a peripheral portion facing group 22 second electromagnet group
  • multiple electromagnets 20 which are arranged in a circular ring shape with respect to a central portion C of the upper electrode 13 (hereinafter,
  • a direction of the electric current flowing in the coil 20 b of each electromagnet 20 is controlled such that magnetic poles on the processing space S side of the respective electromagnets 20 belonging to the peripheral portion facing group 22 are identical to each other, and a direction of the electric current flowing in the coil 20 b of each electromagnet 20 is controlled such that magnetic poles on the processing space S side of the respective electromagnets 20 belonging to the outer portion facing group 23 are identical to each other.
  • the central portion facing group 21 has a single electromagnet 20 in the drawing, but may be formed of multiple electromagnets 20 arranged in a circular ring shape with respect to the upper electrode central portion C facing the central portion of the wafer W.
  • the upper electrode 13 of the substrate processing apparatus 10 is viewed from the processing space S along a white arrow of FIG. 1A , since the upper electrode 13 is not transparent, each electromagnet 20 arranged on the top surface 13 a of the upper electrode 13 cannot be seen.
  • the upper electrode 13 is set to be transparent in the present example embodiment, so that the arrangement of the electromagnets 20 can be seen through the upper electrode 13 , which will be the same in FIG. 2B and FIG. 8B to be described later.
  • FIG. 2A and FIG. 2B are diagrams for explaining a drift motion of electrons caused by an electric field and a magnetic field generated in the substrate processing apparatus of FIG. 1A and FIG. 1B
  • FIG. 2A is a cross-sectional view of the substrate processing apparatus of FIG. 1A and FIG. 1B
  • FIG. 2B is a diagram showing an upper electrode of the substrate processing apparatus when viewed along a white arrow of FIG. 2A .
  • a magnetic pole on the processing space S side of the electromagnet 20 belonging to the central portion facing group 21 is set as an N pole
  • a magnetic pole on the processing space S side of each electromagnet 20 belonging to the peripheral portion facing group 22 and the outer portion facing group 23 is set as an S pole
  • a magnetic field B in a radial shape is generated from the central portion facing group 21 toward the peripheral portion facing group 22 and the outer portion facing group 23 .
  • the electric field E is generated from a front side toward an inner side of FIG. 2B , and the magnetic field B is generated in a radial shape with respect to the upper electrode central portion C. Therefore, the electrons are accelerated in a tangent direction of the circumference around the upper electrode central portion C and rotated along a circular electron trajectory D around the upper electrode central portion C according to the Fleming's left-hand rule.
  • the rotated electrons are collided with molecules or atoms of the processing gas within the processing space S to generate plasma.
  • circular ring-shaped plasma is generated along the circular electron trajectory D.
  • a speed (vgE) of the drift motion of the electrons caused by the electric field and the magnetic field is expressed by the following equation (1).
  • FIG. 3A to FIG. 3C and FIG. 4A to FIG. 4C are diagrams for explaining a relationship between a magnetic pole on the processing space side of each electromagnet and intensity of a magnetic field generated in the processing space.
  • FIG. 3A illustrates a case where the magnetic pole on the processing space S side of the electromagnet 20 belonging to the central portion facing group 21 is set as the N pole; the magnetic pole on the processing space S side of each electromagnet 20 belonging to the peripheral portion facing group 22 is set as the S pole; and an electric current is not applied to the coil 20 b of each electromagnet 20 belonging to the outer portion facing group 23 not to generate the magnetic flux.
  • a magnetic field B is generated from the central portion facing group 21 toward the peripheral portion facing group 22 , and the magnetic field intensity becomes maximized between the central portion facing group 21 and the peripheral portion facing group 22 , so that the plasma density between the central portion facing group 21 and the peripheral portion facing group 22 can be increased.
  • FIG. 3B illustrates a case where an electric current is not applied to the coil 20 b of the electromagnet 20 belonging to the central portion facing group 21 and the magnetic flux is not generated; the magnetic pole on the processing space S side of each electromagnet 20 belonging to the peripheral portion facing group 22 is set as the S pole; and the magnetic pole on the processing space S side of each electromagnet 20 belonging to the outer portion facing group 23 is set as the N pole.
  • a magnetic field B is generated from the outer portion facing group 23 toward the peripheral portion facing group 22 , and the magnetic field intensity becomes maximized between the outer portion facing group 23 and the peripheral portion facing group 22 , so that the plasma density between the outer portion facing group 23 and the peripheral portion facing group 22 can be increased.
  • FIG. 3C illustrates a case where the magnetic pole on the processing space S side of the electromagnet 20 belonging to the central portion facing group 21 is set as the N pole; the magnetic pole on the processing space S side of each electromagnet 20 belonging to the peripheral portion facing group 22 is set as the S pole; and the magnetic pole on the processing space S side of each electromagnet 20 belonging to the outer portion facing group 23 is set as the N pole.
  • a magnetic field B is generated from the central portion facing group 21 toward the peripheral portion facing group 22 and also generated from the outer portion facing group 23 toward the peripheral portion facing group 22 , and the magnetic field intensity is relatively increased between the central portion facing group 21 and the peripheral portion facing group 22 and between the outer portion facing group 23 and the peripheral portion facing group 22 . Accordingly, the plasma density between the central portion facing group 21 and the peripheral portion facing group 22 and between the outer portion facing group 23 and the peripheral portion facing group 22 can be increased.
  • FIG. 4A illustrates a case where the magnetic pole on the processing space S side of the electromagnet 20 belonging to the central portion facing group 21 is set as the N pole, the magnetic pole on the processing space S side of each electromagnet 20 belonging to the peripheral portion facing group 22 is set as the S pole, and the magnetic pole on the processing space S side of each electromagnet 20 belonging to the outer portion facing group 23 is set as the S pole.
  • a magnetic field B is generated from the central portion facing group 21 toward the peripheral portion facing group 22 and the outer portion facing group 23 .
  • the magnetic field intensity becomes maximized therebetween.
  • the magnetic field intensity is relatively increased between the outer portion facing group 23 and the peripheral portion facing group 22 .
  • the plasma density between the central portion facing group 21 and the peripheral portion facing group 22 and between the outer portion facing group 23 and the peripheral portion facing group 22 can be increased.
  • the plasma density varies depending on the magnetic field intensity, the plasma density between the central portion facing group 21 and the peripheral portion facing group 22 is higher than the plasma density between the outer portion facing group 23 and the peripheral portion facing group 22 .
  • FIG. 4B illustrates a case where the magnetic pole on the processing space S side of the electromagnet 20 belonging to the central portion facing group 21 is set as the N pole; the magnetic pole on the processing space S side of each electromagnet 20 belonging to the peripheral portion facing group 22 is set as the N pole; and the magnetic pole on the processing space S side of each electromagnet 20 belonging to the outer portion facing group 23 is set as the S pole.
  • a magnetic field B is generated from the central portion facing group 21 and the peripheral portion facing group 22 toward the outer portion facing group 23 . Further, since the magnetic field B is overlapped between the outer portion facing group 23 and the peripheral portion facing group 22 , the magnetic field intensity becomes maximized therebetween. Moreover, the magnetic field intensity is relatively increased between the central portion facing group 21 and the peripheral portion facing group 22 . As a result, the plasma density between the central portion facing group 21 and the peripheral portion facing group 22 and between the outer portion facing group 23 and the peripheral portion facing group 22 can be increased. Further, in this case, the plasma density between the outer portion facing group 23 and the peripheral portion facing group 22 is higher than the plasma density between the central portion facing group 21 and the peripheral portion facing group 22 .
  • FIG. 4C illustrates a case where the magnetic pole on the processing space S side of the electromagnet 20 belonging to the central portion facing group 21 is set as the N pole; an electric current is not applied to the coil 20 b of each electromagnet 20 belonging to the peripheral portion facing group 22 and the magnetic flux is not generated; and the magnetic pole on the processing space S side of each electromagnet 20 belonging to the outer portion facing group 23 is set as the S pole.
  • a magnetic field B is generated from the central portion facing group 21 toward the outer portion facing group 23 , and the magnetic field intensity becomes maximized between the central portion facing group 21 and the outer portion facing group 23 , specifically at a location facing the peripheral portion facing group 22 .
  • the plasma density at the location facing the peripheral portion facing group 22 can be increased.
  • the substrate processing apparatus 10 in accordance with the present example embodiment includes the multiple electromagnets 20 arranged in a substantially radial shape on the top surface 13 a of the upper electrode 13 opposite to the processing space S. Therefore, a magnetic field B radially distributed with respect to the central portion of the wafer W in the processing space can be generated. Further, by varying a direction or a magnitude of an electric current flowing in each electromagnet 20 , it is possible to easily control a magnetic flux density or a magnetic flux direction of a magnetic field to be generated. As a result, it is possible to obtain a magnetic field distribution that allows a plasma density distribution in the processing space to be optimized.
  • a plasma density distribution in the processing space S varies depending on conditions of a plasma process, for example, a kind of a processing gas, or a power and a frequency of a high frequency power.
  • a plasma density distribution as desired.
  • a plasma density distribution generated only by an electric field E is increased at a central portion of the processing space S, as depicted in FIG. 3B and FIG. 4B , it is necessary to increase the plasma density between the outer portion facing group 23 and the peripheral portion facing group 22 by maximizing the magnetic field intensity between the outer portion facing group 23 and the peripheral portion facing group 22 .
  • the plasma density distribution (dense at the central portion of the processing space S) generated only by the electric field E is overlapped with the plasma density distribution (dense at the peripheral portion of the processing space S) generated by the magnetic field B, so that a uniform plasma density distribution can be obtained.
  • a plasma density distribution generated only by the electric field E is increased at the peripheral portion of the processing space S, as depicted in FIG. 3A and FIG. 4A , it is necessary to increase the plasma density between the central portion facing group 21 and the peripheral portion facing group 22 by maximizing the magnetic field intensity between the central portion facing group 21 and the peripheral portion facing group 22 .
  • the plasma density distribution (dense at the peripheral portion of the processing space S) generated only by the electric field E is overlapped with the plasma density distribution (dense at the central portion of the processing space S) generated by the magnetic field B, so that a uniform plasma density distribution can be obtained.
  • intensity of a magnetic field generated by each electromagnet 20 and/or a magnetic pole of each electromagnet 20 may be varied depending on the conditions of the plasma process to be performed on the wafer W. Therefore, if these conditions of the plasma process to be performed on the wafer W are changed, it is possible to obtain plasma density distributions respectively optimized for the conditions of the plasma process before and after the conditions are changed by controlling the generation condition of the magnetic field B.
  • Configurations and operations of the present example embodiment are basically the same as those of the above-described first example embodiment, so that explanation of the redundant configurations and operations will be omitted and different configurations and operations will be explained below.
  • FIG. 5 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus in accordance with the present example embodiment.
  • a substrate processing apparatus 24 in FIG. 5 includes three high frequency power supplies configured to apply high frequency powers.
  • the susceptor 12 is connected to a first high frequency power supply 25 via a first matching unit 26 , to a second high frequency power supply 27 via a second matching unit 28 , and to a third high frequency power supply 29 via a third matching unit 30 .
  • the first high frequency power supply 25 is configured to apply a high frequency power of, for example, about 40 MHz to the susceptor 12
  • the second high frequency power supply 27 is configured to apply a high frequency power of, for example, about 100 MHz to the susceptor 12
  • the third high frequency power supply 29 is configured to apply a high frequency power of, for example, about 3.2 MHz to the susceptor 12 .
  • the high frequency powers are applied from the first high frequency power supply 25 , the second high frequency power supply 27 , and the third high frequency power supply 29 to the susceptor 12 depending on conditions of a plasma process. Further, the high frequency powers need not be applied to the susceptor 12 from all of the three high frequency power supplies 25 , 27 , and 29 , and for example, a high frequency power may be applied from one or two selected from the three high frequency power supplies 25 , 27 , and 29 . Although in the present example embodiment, the three high frequency power supplies 25 , 27 , and 29 are connected to the susceptor 12 , four or more high frequency power supplies may be connected to the susceptor 12 . Further, the high frequency power supply may not be connected to the susceptor 12 , but the high frequency power supply may be connected to the upper electrode to apply the high frequency power to the processing space S.
  • intensity of a magnetic field to be generated by controlling each electromagnet 20 depending on the frequencies of the high frequency powers to be applied to the susceptor 12 and/or a magnetic pole of the electromagnet 20 is changed.
  • the second high frequency power 27 applies a high frequency power of about 100 MHz to the susceptor 12 , a plasma density distribution dense at a central portion of the processing space S is generated.
  • a plasma density distribution dense at a central portion of the processing space S is generated.
  • the magnetic pole on the processing space S side of each electromagnet 20 belonging to the peripheral portion facing group 22 is set as the S pole and the magnetic pole on the processing space S side of each electromagnet 20 belonging to the outer portion facing group 23 is set as the N pole, or the magnetic pole on the processing space S side of the electromagnet 20 belonging to the central portion facing group 21 is set as the N pole, the magnetic pole on the processing space S side of each electromagnet 20 belonging to the peripheral portion facing group 22 is set as the N pole, and the magnetic pole on the processing space S side of each electromagnet 20 belonging to the outer portion facing group 23 is set as the S pole.
  • the plasma density distribution dense at the central portion of the processing space S can be overlapped with the plasma density distribution dense at the peripheral portion thereof, so that a uniform plasma density distribution in the processing space S can be obtained.
  • the first high frequency power supply 25 applies a high frequency power of about 40 MHz to the susceptor 12 , a relatively uniform plasma density distribution is generated in the processing space S.
  • a magnetic field B is not generated.
  • the second high frequency power supply 27 applies a high frequency power of about 100 MHz to the susceptor 12 , the magnetic field B of which intensity is maximized between the outer portion facing group 23 and the peripheral portion facing group 22 is generated, and if the first high frequency power supply 25 applies a high frequency power of about 40 MHz to the susceptor 12 , an electric current is not applied to the coils 20 b of all the electromagnets 20 and the magnetic field B is not generated.
  • the third high frequency power supply 29 applies a high frequency power of about 3.2 MHz to the susceptor 12 in the above-described substrate processing apparatus 24
  • the third high frequency power supply 29 may apply a high frequency power of about 13 MHz to the susceptor 12 .
  • Configurations and operations of the present example embodiment are basically the same as those of the above-described first example embodiment, so that explanation of the redundant configurations and operations will be omitted and different configurations and operations will be explained below.
  • FIG. 6A to FIG. 6C and FIG. 7A to FIG. 7C are process diagrams for explaining a TSV (Through Silicon Via) process a part of which is performed by the substrate processing apparatus in accordance with the present example embodiment.
  • the TSV process is a processing method of obtaining a three-dimensional wiring structure by forming a through via in a silicon layer of a chip, in order to obtain an electric connection between chips stacked for manufacturing a semiconductor device.
  • a transistor 31 is formed on a surface of a wafer W, and on the wafer W on which the transistor 31 is formed, an interlayer insulating film 32 is further formed ( FIG. 6A ).
  • a wiring structure 33 is formed on the interlayer insulating film 32 .
  • this wiring structure 33 multiple wiring layers 34 and multiple insulating films 35 are alternately stacked on the interlayer insulating film 32 , and via holes 36 for wiring, through which the upper and lower wiring layers 34 are electrically connected to each other, are formed to be penetrated through the insulating film 35 ( FIG. 6B ).
  • the support wafer SW is a substrata serving as a supporting body configured to reinforce the wafer W and suppress the wafer W from being bent when the wafer W becomes thinned by grinding a rear surface Wb of the wafer W. Further, the support wafer SW is formed of a silicon plate or quartz glass having a thickness of, for example, about 10 ⁇ m.
  • the bonded wafer LW is supported by, for example, a support provided in a grinding device, and the rear surface Wb of the wafer W is ground until a thickness T 1 before the grinding is reduced to a certain thickness T 2 of, for example, about 50 ⁇ m to about 200 ⁇ m ( FIG. 6C ).
  • the rear surface Wb of the wafer W is coated with a resist (not illustrated) and then exposed and developed, so that a resist pattern (not illustrated) for forming a via hole is formed.
  • a dry etching process is performed on the bonded wafer LW by a substrate processing apparatus 39 to be described later and a via hole V having a diameter of, for example, about 1 ⁇ m to about 10 ⁇ m is formed.
  • the resist remaining on the rear surface Wb of the bonded wafer LW is removed through an ashing process performed by the substrate processing apparatus 39 to be described later ( FIG. 7A ).
  • a depth of the via hole V corresponds to a thickness of the wafer W after the rear surface Wb of the wafer W becomes thinned by the grinding, and is, for example, about 50 ⁇ m to about 200 ⁇ m.
  • an insulating film 37 formed of, for example, polyimide is formed on an inner peripheral surface of the via hole V.
  • a through electrode 38 is formed by, for example, the electroplating ( FIG. 7B ).
  • an adhesive strength of the adhesive G is reduced by irradiating, for example, ultraviolet lights (UV light), and the support wafer SW is separated from the wafer W.
  • UV light ultraviolet lights
  • FIG. 8A and FIG. 8B are diagrams schematically showing a configuration of a substrate processing apparatus in accordance with the present example embodiment, specifically, FIG. 8A is a cross-sectional view, and FIG. 8B is a diagram showing an upper electrode of the substrate processing apparatus when viewed along a white arrow of FIG. 8A .
  • the present substrate processing apparatus is configured to perform a plasma process, for example, a dry etching process or an ashing process in the TSV process as shown in FIG. 6A to FIG. 6C and FIG. 7A to FIG. 7C , on the wafer.
  • a plasma process for example, a dry etching process or an ashing process in the TSV process as shown in FIG. 6A to FIG. 6C and FIG. 7A to FIG. 7C , on the wafer.
  • the substrate processing apparatus 39 includes two kinds of multiple electromagnets 40 and electromagnets 41 arranged on the top surface 13 a of the upper electrode 13 .
  • Each electromagnet 40 includes a rod-shaped yoke 40 a and a coil 40 b wound on a side surface of the yoke 40 a.
  • each electromagnet 41 also includes a rod-shaped yoke 41 a and a coil 41 b wound on a side surface of the yoke 41 a.
  • the yoke 40 a is formed of an iron core having a diameter of about 6.5 mm to about 7.5 mm, and the coil 40 b is formed by winding a copper wire on the side surface of the yoke 40 a about 180 times to about 200 times.
  • the yoke 41 a is formed of an iron core having a diameter of about 26 mm to about 28 mm, and the coil 41 b is formed by winding a copper wire on the side surface of the yoke 41 a about 1300 times to about 1500 times.
  • the electromagnet 40 or the electromagnet 41 by controlling a value of an electric current or a direction of an electric current flowing in the coil 40 b or the coil 41 b, it is possible to change the total magnetic flux or a direction of the magnetic flux generated by the electromagnet 40 or the electromagnet 41 .
  • the total magnetic flux generated by an electromagnet can be expressed by the following equation (2).
  • the total magnetic flux refers to an amount of all magnetic force lines generated from one ends of yokes as iron cores, and the unit thereof is Wb (weber).
  • the magnetomotive force refers to a force for generating magnetic flux in a so-called magnetic circuit, and the unit thereof is AT (ampere turn). Specifically, the magnetomotive force is expressed by the product of the number of coil windings on a yoke and a value of the electric current flowing in the coil. Therefore, as the coil winding number and the value of the electric current flowing in the coil are both increased, the magnetomotive force is also increased.
  • the magnetic reluctance is an index indicating the difficulty of the magnetic flux flow in the magnetic circuit, which is expressed by the following equation (3).
  • Magnetic reluctance length of magnetic path/(magnetic permeability ⁇ cross sectional area of magnetic path) (3)
  • the length of the magnetic path is the length of the yoke
  • the magnetic permeability is a permeability of the yoke
  • the cross sectional area of the magnetic path is a cross sectional area of the yoke. Therefore, as the length of the yoke is increased and the diameter of the yoke is decreased, the magnetic reluctance is increased.
  • the yokes 40 a and 41 a have the same length and the same permeability.
  • the values of the electric currents flowing in the coils 40 b and 41 b are substantially the same (electric current of about 0.78 A flows in the coil 40 b at a peak, and the electric current of about 0.70 A flows in the coil 41 b at a peak). Since, however, the winding number of the coil 41 b is greater than that of the coil 40 b, the magnetomotive force of the electromagnet 41 is greater than that of the electromagnet 40 .
  • a diameter of the yoke 41 is greater than that of the yoke 40 , so that the magnetic reluctance of the electromagnet 41 becomes smaller than that of the electromagnet 40 . Accordingly, the total magnetic flux generated by the electromagnets 41 becomes greater than that generated by the electromagnets 40 . To be specific, the total magnetic flux generated by the electromagnets 41 becomes about 8 to about 12 times greater than that generated by the electromagnets 40 .
  • the electromagnets 40 and 41 are divided into a central portion facing group 42 (first electromagnet group) including the multiple electromagnets 40 facing the central portion of the wafer W; a peripheral portion facing group 43 (second electromagnet group) including the multiple electromagnets 40 arranged to surround the central portion facing group 42 ; and an outer portion facing group 44 (third electromagnet group) including the multiple electromagnets 41 which are arranged in a circular ring shape with respect to the upper electrode central portion C and also arranged at an outside of the peripheral portion facing group 43 without facing the wafer W.
  • the electromagnets 40 are spaced apart at equal distances in a radial direction and a circumferential direction of the upper electrode 13 and also arranged in a substantially radial shape. Further, in the outer portion facing group 44 , the electromagnets 41 are arranged in a single annular ring shape along the circumferential direction of the upper electrode 13 . Furthermore, in FIG. 8A and FIG. 8B , the electromagnets 40 of the central portion facing group 42 are indicated by dashed lines.
  • the central portion facing group 42 includes the multiple electromagnets 40 of which central portions are spaced from the upper electrode central portion C by a distance of about 74.4 mm or less (indicated by L 1 in FIG. 8B ).
  • the peripheral portion facing group 43 includes the multiple electromagnets 40 of which central portions are spaced from the upper electrode central portion C by a distance greater than about 74.4 mm and equal to or smaller than about 148.8 mm (indicated by L 2 in FIG. 8B ).
  • the outer portion facing group 44 includes the multiple electromagnets 41 of which central portions are spaced from the upper electrode central portion C by a distance of about 190 mm (indicated by L 3 in FIG. 8B ).
  • the electromagnets 40 of the central portion facing group 42 are indicated by dashed lines.
  • the directions of the electric currents flowing in the coils 40 b of the electromagnets 40 are set such that magnetic poles on the processing space S side of the electromagnets 40 have the same polarity.
  • the directions of the electric currents flowing in the coils 41 b of the electromagnets 41 are set such that the magnetic poles on the processing space S side of the electromagnets 41 have the same polarity.
  • a mixed gas of a fluorine-containing gas and an oxygen gas for example, a mixed gas containing a SF 6 gas and an O 2 gas is used as a processing gas and the TSV process is performed on the wafer W by generating plasma from the processing gas
  • plasma density at a central portion of the processing space S becomes higher than plasma density at a peripheral portion of the processing space S, so that an etching rate at a central portion of the wafer W becomes higher than an etching rate at a peripheral portion of the wafer W, as shown in the graph of FIG. 9A .
  • the magnetic pole on the processing space S side of each electromagnet 40 belonging to the central portion facing group 42 is set as the N pole
  • the magnetic pole on the processing space S side of each electromagnet 40 belonging to the peripheral portion facing group 43 and the magnetic pole on the processing space S side of each electromagnet 41 belonging to the outer portion facing group 44 are set as the S poles.
  • a magnetic field B is radially generated from the central portion facing group 42 toward the peripheral portion facing group 43 and the outer portion facing group 44 .
  • the generated magnetic field B the total magnetic flux generated by the electromagnets 41 belonging to the outer portion facing group 44 is greater than the total magnetic flux generated by the electromagnets 40 belonging to the central portion facing group 42 and the peripheral portion facing group 43 as described above.
  • the magnetic field intensity at the peripheral portion of the processing space S is greater than the magnetic field intensity at the central portion of the processing space S. Therefore, in the magnetic field B, the magnetic field intensity near the outer portion facing group 44 , i.e. the peripheral portion of the processing space S, is maximized (see FIG. 10B to be described later).
  • an electric field E has been generated by applying a high frequency power from the first high frequency power supply 14 to the susceptor 12 .
  • electrons are rotated around the upper electrode central portion C along a circular electron trajectory D according to the Fleming's left-hand rule. Since, however, the magnetic field density at the peripheral portion of the processing space S is maximized, many electrons are rotated at the peripheral portion of the processing space S, so that a lot of plasma is generated at the peripheral portion of the processing space S and the plasma density is increased.
  • a plasma density distribution (dense at the central portion of the processing space S) generated by the etching process is overlapped with a plasma density distribution (dense at the peripheral portion of the processing space S) caused by the magnetic field B generated by the substrate processing apparatus 39 to obtain a uniform plasma density distribution.
  • FIG. 9B is a graph showing an etching rate distribution when the substrate processing apparatus 39 depicted in FIG. 8A and FIG. 8B performs an etching process on the wafer W while generating the magnetic field B.
  • the substrate processing apparatus 39 when performing the etching process, if the substrate processing apparatus 39 sets the magnetic pole on the processing space S side of each electromagnet 40 belonging to the central portion facing group 42 as the N pole, and sets the magnetic pole on the processing space S side of each electromagnet 40 belonging to the peripheral portion facing group 43 and the magnetic pole on the processing space S side of each electromagnet 41 belonging to the outer portion facing group 44 as the S poles, and then, generates a magnetic field B, a substantially uniform etching rate can be obtained in the entire surface of the wafer W.
  • FIG. 10A and FIG. 10B are graphs for explaining a calculation result when a magnetic pole on the processing space S side of each electromagnet 40 and electromagnet 41 is changed in the central portion facing group 42 , the peripheral portion facing group 43 , and the outer portion facing group 44 in the substrate processing apparatus 39 , and FIG. 10A shows an etching rate distribution, and FIG. 10B shows a magnetic flux density distribution.
  • a thin dashed line indicates a case where all the electromagnets 40 and all the electromagnets 41 do not generate magnetic flux (comparative comparative 1).
  • a thin solid line indicates a case where the magnetic pole on the processing space S side of each electromagnet 40 belonging to the central portion facing group 42 is set as the N pole, the magnetic pole on the processing space S side of each electromagnet 40 belonging to the peripheral portion facing group 43 is set as the S pole, and each electromagnet 41 belonging to the outer portion facing group 44 does not generate magnetic flux (comparative comparative 2).
  • a thick dashed line indicates a case where the magnetic pole on the processing space S side of each electromagnet 40 belonging to the central portion facing group 42 is set as the N pole, each electromagnet 40 b belonging to the peripheral portion facing group 43 does not generate magnetic flux, and the magnetic pole on the processing space S side of each electromagnet 41 belonging to the outer portion facing group 44 is set as the S pole (experimental example 1).
  • a thick solid line indicates a case where the magnetic pole on the processing space S side of each electromagnet 40 belonging to the central portion facing group 42 is set as the N pole, the magnetic pole on the processing space S side of each electromagnet 40 belonging to the peripheral portion facing group 43 is set as the S pole, and the magnetic pole on the processing space S side of each electromagnet 41 belonging to the outer portion facing group 44 is set as the S pole (experimental example 2).
  • the etching rate on the entire surface of the wafer W is substantially uniform. It is assumed that this is because the outer portion facing group 44 is provided at a place where the outer portion facing group 44 does not face the wafer W, specifically, at an outside of the wafer W. Accordingly, a magnetic field B having the maximum magnetic field intensity at a slightly outside of the wafer W can be obtained and the plasma density can be substantially uniform throughout the entire area facing the wafer W in the processing space S.
  • the magnetic field intensity is not smoothly increased from the central portion of the processing space S (central portion of the wafer W) to the peripheral portion of the processing space S (in a range of about 150 mm to about 160 mm from the central portion of the wafer W), and particularly, forms a step-shaped portion at an area (in a range of about 70 mm to about 100 mm from the central portion of the wafer W) facing the peripheral portion facing group 43 .
  • the two kinds of multiple electromagnets 40 and multiple electromagnets 41 arranged on the top surface 13 a of the upper electrode 13 are divided into the central portion facing group 42 facing the central portion of the wafer W; the peripheral portion facing group 43 configured to surround the central portion facing group 42 ; and the outer portion facing group 44 which is arranged on the outside of the peripheral portion facing group 43 without facing the wafer W.
  • the magnetic field B in which the magnetic field intensity at the peripheral portion of the processing space S is greater than the magnetic field intensity at the central portion of the processing space S is generated.
  • the magnetic pole on the processing space S side of each electromagnet 40 belonging to the central portion facing group 42 is set as the N pole and the magnetic pole on the processing space S side of each electromagnet 41 belonging to the outer portion facing group 44 is set as the S pole.
  • the magnetic pole on the processing space S side of each electromagnet 40 belonging to the central portion facing group 42 may be set as the S pole and the magnetic pole on the processing space S side of each electromagnet 41 belonging to the outer portion facing group 44 may be set as the N pole.
  • the central portion facing group 42 includes the electromagnets 40 of which central portions are spaced from the upper electrode central portion C by a distance of about 74.4 mm or less
  • the peripheral portion facing group 43 includes the electromagnets 40 of which central portions are spaced from the electrode central portion C by a distance greater than about 74.4 mm. That is, the boundary of the central portion facing group 42 and the peripheral portion facing group 43 is set to be about 74.4 mm from the electrode central portion C.
  • the boundary of the central portion facing group 42 and the peripheral portion facing group 43 can be changed to obtain the distribution of the magnetic field B that allows the plasma density distribution in the processing space S to be optimized.
  • the multiple electromagnets 40 do not need to be divided into the central portion facing group 42 and the peripheral portion facing group 43 .
  • the boundary of the central portion facing group 42 and the peripheral portion facing group 43 or the number of electromagnet groups can be changed by intensity of the magnetic field B generated by each electromagnet 40 by controlling the value or the direction of the electric current flowing in the coil 40 b of each electromagnet 40 through the controller and/or by controlling the magnetic pole of each electromagnet 40 .
  • Electromagnet 20 , 40 , 41 Electromagnet

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