US20140144381A1 - Method for washing semiconductor manufacturing apparatus component, apparatus for washing semiconductor manufacturing apparatus component, and vapor phase growth apparatus - Google Patents

Method for washing semiconductor manufacturing apparatus component, apparatus for washing semiconductor manufacturing apparatus component, and vapor phase growth apparatus Download PDF

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Publication number
US20140144381A1
US20140144381A1 US14/116,037 US201214116037A US2014144381A1 US 20140144381 A1 US20140144381 A1 US 20140144381A1 US 201214116037 A US201214116037 A US 201214116037A US 2014144381 A1 US2014144381 A1 US 2014144381A1
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Prior art keywords
gas
washing
semiconductor manufacturing
manufacturing apparatus
reaction product
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US14/116,037
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English (en)
Inventor
Masashi Mizuta
Yuichi Yaguchi
Yutaka Nishikori
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Furukawa Co Ltd
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Furukawa Co Ltd
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Assigned to FURUKAWA CO., LTD. reassignment FURUKAWA CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MIZUTA, MASASHI, NISHIKORI, Yutaka, YAGUCHI, Yuichi
Publication of US20140144381A1 publication Critical patent/US20140144381A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Definitions

  • the present invention relates to a method for washing a semiconductor manufacturing apparatus component, an apparatus for washing a semiconductor manufacturing apparatus component, and a vapor phase growth apparatus.
  • a semiconductor is manufactured by depositing nitrides such as GaN (gallium nitride) and AlGaN (aluminum gallium nitride) on a silicon wafer.
  • nitrides such as GaN (gallium nitride) and AlGaN (aluminum gallium nitride)
  • a semiconductor thin film such as GaN to be deposited on the wafer inside a semiconductor manufacturing apparatus is apt to adhere to various kinds of components such as a wafer tray that holds the wafer, and a gas flow channel other than the wafer.
  • GaN adhered to the components other than the wafer becomes an unnecessary contaminant, and causes a problem in the manufacturing of the nitride semiconductor. Therefore, it is necessary for a contaminated component to be washed to remove the nitride.
  • nitrides such as GaN and AlGaN are allowed to react with a washing gas containing a chlorine-based gas as a main component, thereby removing the nitrides adhered to the semiconductor manufacturing apparatus component.
  • Patent Document 1 Japanese Unexamined Patent Publication No. 2006-332201 discloses a washing method in which a contaminated component inside a nitride semiconductor manufacturing apparatus is brought into contact with a washing gas containing a chlorine-based gas as a main component at a temperature equal to or higher than 500° C. and equal to or lower than 1000° C.
  • the nitride of the contaminated component reacts with the chlorine-based gas in the washing gas. It is considered that a reaction product that is generated vaporizes at a temperature equal to or higher than 500° C. and is removed.
  • it is not necessary to set a temperature to a high temperature equal to or higher than 1000° C. it is not necessary to set a temperature to a high temperature equal to or higher than 1000° C., and thus it is considered that thermal deformation of a wafer tray does not occur.
  • Patent Document 2 Japanese Unexamined Patent Publication No. 2010-245376 discloses a washing apparatus in which a washing gas introducing pipe is disposed at the bottom of a reaction chamber. Since the washing gas introducing pipe is disposed at the bottom of the reaction chamber, a washing gas that is introduced into the reaction chamber does not collide with a heat insulation member and is not split. Accordingly, it is considered that the washing gas may be used efficiently for washing of the contaminated component.
  • Patent Document 3 Japanese Unexamined Patent Publication No. 2010-212400 discloses an apparatus for washing a nitride semiconductor apparatus component.
  • the apparatus includes a deposition prevention plate provided on a sealing surface side of a sealing cap, which blocks both end openings of a reaction tube having a washing gas introducing pipe and an exhaust gas discharging pipe, to be adjacent to the sealing surface with a space therebetween. Adhesion of a reaction product to an inner wall of the sealing cap may be suppressed due to the deposition prevention plate. Accordingly, when taking out a washed component by opening the reaction tube after washing, generation of a toxic gas due to reaction of the reaction product and moisture in the air does not occur. Accordingly, it is considered that a worker may safely conduct a washing operation.
  • Patent Document 1 to Patent Document 3 a reaction product between nitrides such as GaN and AlGaN and a chlorine-based gas may adhere to the semiconductor manufacturing apparatus component or the inside of the washing apparatus in some cases, and thus it is necessary to continuously carry out removal of the reaction product during a washing operation. At this time, a part of an unused washing gas is removed together with the reaction product, and thus it is necessary to continuously supply the washing gas into the apparatus. Therefore, a used amount of the washing gas which is necessary for removal of the contaminant increases.
  • Patent Document 4 Japanese Unexamined Patent Publication No. 2007-109928 discloses a method for washing a nitride semiconductor manufacturing apparatus component.
  • a contaminated component inside a nitride semiconductor manufacturing apparatus is brought into contact with a first washing gas containing a chlorine-based gas as a main component to remove a contaminant, and the contaminated component is brought into contact with a second washing gas to remove a chlorine-based material that remains in the component.
  • contact with the first washing gas and contact with the second washing gas are carried out in a batch processing (sealing) type.
  • the sealing type may reduce a used amount of the chlorine gas compared to a ventilation treatment (air stream) type.
  • the present inventors have tried to wash the semiconductor manufacturing apparatus component with the sealing type according to the method described in Patent Document 4.
  • the used amount of the chlorine gas may be reduced to a certain degree compared to the air stream type.
  • the present inventors confirm that washing efficiency is still low, and there is a room for additional improvement.
  • the invention has been made in consideration of the above-described circumstances, and an object thereof is to provide a method for washing a semiconductor manufacturing apparatus component and an apparatus for washing a semiconductor manufacturing apparatus component which are capable of reducing a used amount of a washing gas and which are excellent in washing efficiency.
  • the invention has been made in consideration of the above-described circumstances, and another object thereof is to provide a vapor phase growth apparatus excellent in yield rate.
  • a method for washing a semiconductor manufacturing apparatus component includes: a first process of disposing a semiconductor manufacturing apparatus component, to which a nitride semiconductor expressed by a general formula of Al x In y Ga 1-x-y N (provided that, x and y satisfy relationships of 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, and 0 ⁇ x+y ⁇ 1) adheres, inside an apparatus provided with a gas introducing pipe and a gas discharging pipe; a second process of setting the inside of the apparatus to a decompressed state, and then introducing a halogen-containing gas from the gas introducing pipe; and a third process of retaining the halogen-containing gas inside the apparatus to remove the nitride semiconductor adhered to the semiconductor manufacturing apparatus component.
  • a pressure inside the apparatus in the third process is equal to or more than 10 kPa and equal to or less than 90 kPa.
  • the pressure inside the apparatus is set to be equal to or more than 10 kPa, a reaction rate between the nitride semiconductor and the halogen-containing gas increases, and thus the nitride semiconductor adhered to the semiconductor manufacturing apparatus component may be efficiently removed.
  • the pressure inside the apparatus is set to be equal to or less than 90 kPa, and thus an average free process of the reaction product of the nitride semiconductor and the halogen-containing gas may be lengthened. Accordingly, diffusion efficiency of the reaction product increases, and thus reaction efficiency between the nitride and the halogen-containing gas may be lengthened. As a result, a used amount of a washing gas which is necessary to remove the adhered nitride semiconductor may be reduced.
  • an apparatus for washing a semiconductor manufacturing apparatus component to which a nitride semiconductor expressed by a general formula of Al x In y Ga 1-x-y N (provided that, x and y satisfy relationships of 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, and 0 ⁇ x+y ⁇ 1) adheres.
  • the apparatus includes: a component holding portion that holds the semiconductor manufacturing apparatus component; a gas introducing pipe that introduces a halogen-containing gas to react with the nitride semiconductor; a trapping unit that traps a reaction product of the nitride semiconductor and the halogen-containing gas; and a gas discharging pipe that discharges the reaction product.
  • the trapping unit that traps the reaction product is provided to the washing apparatus, and the reaction product is trapped by the trapping unit. Accordingly, adhesion of the reaction product to the semiconductor manufacturing apparatus component or a not-preferred portion inside the washing apparatus may be suppressed. As a result, it is not necessary to continuously carry out introduction of the washing gas and removal of the reaction product, and a used amount of the washing gas which is necessary to remove the adhered nitride semiconductor may be reduced.
  • an vapor phase growth apparatus that supplies a first raw material gas containing gallium and a second raw material gas containing ammonia to a substrate inside a reaction tank to allow a nitride semiconductor expressed by a general formula of Al x In y Ga 1-x-y N (provided that, x and y satisfy relationships of 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, and 0 ⁇ x+y ⁇ 1) to grow on the substrate.
  • the apparatus includes: a substrate holding portion that holds the substrate; a gas introducing pipe that introduces a halogen-containing gas; a trapping unit that traps a reaction product of the nitride semiconductor and the halogen-containing gas; and a gas discharging pipe that discharges the reaction product.
  • a method for washing a semiconductor manufacturing apparatus component and an apparatus for washing a semiconductor manufacturing apparatus component which are capable of reducing a used amount of a washing gas and which are excellent in washing efficiency, may be provided.
  • a vapor phase growth apparatus excellent in a yield rate may be provided.
  • FIG. 1 shows a cross-sectional diagram illustrating a configuration of a washing apparatus according to a first embodiment.
  • FIG. 2 shows a cross-sectional diagram illustrating a configuration of the washing apparatus according to the first embodiment.
  • FIG. 3 shows a cross-sectional diagram illustrating a configuration of a washing apparatus according to a second embodiment.
  • FIG. 4 shows a cross-sectional diagram illustrating a configuration of the washing apparatus according to the second embodiment.
  • FIG. 5 shows a cross-sectional diagram illustrating a part of the configuration of the washing apparatus according to the second embodiment.
  • FIG. 6 shows a cross-sectional diagram illustrating a part of the configuration of the washing apparatus according to the second embodiment.
  • FIG. 7 shows a cross-sectional diagram illustrating a configuration of a vapor phase growth apparatus according to a third embodiment.
  • FIG. 8 shows a cross-sectional diagram illustrating a configuration of the vapor phase growth apparatus according to the third embodiment.
  • FIG. 9 shows a cross-sectional diagram illustrating a part of the configuration of the vapor phase growth apparatus according to the third embodiment.
  • FIG. 10 shows a cross-sectional diagram illustrating apart of the configuration of the vapor phase growth apparatus according to the third embodiment.
  • washing apparatus 100 for washing a semiconductor manufacturing apparatus component according to a first embodiment
  • the washing apparatus according to the first embodiment is not limited to the washing apparatus 100 .
  • FIG. 1 shows a cross-sectional diagram illustrating a configuration of the washing apparatus according to the first embodiment.
  • the washing apparatus 100 includes a component holding portion 102 that holds a semiconductor manufacturing apparatus component 101 to which a nitride semiconductor expressed by a general formula of Al x In y Ga 1-x-y N (provided that, x and y satisfy relationships of 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, and 0 ⁇ x+y ⁇ 1) adheres, a reaction tank 103 that accommodates the component holding portion 102 , a gas introducing pipe 104 that introduces a halogen-containing gas to react with the nitride semiconductor, and a gas discharging pipe 105 that discharges a reaction product generated in the reaction tank 103 .
  • a heating device 106 that heats the inside of the reaction tank 103 , and a pressure gauge 108 that monitors pressure inside the reaction tank 103 may be provided at the periphery of the reaction tank 103 as necessary.
  • a material of the reaction tank 103 is not particularly limited, but the reaction tank 103 is formed from, for example, a heat-resistant material such as quartz.
  • the component holding portion 102 that holds the semiconductor manufacturing apparatus component 101 is provided inside the reaction tank 103 .
  • the shape or size of the reaction tank 103 may be appropriately determined depending on the size of the semiconductor manufacturing apparatus component 101 to be washed or throughput thereof.
  • the component holding portion 102 is a member that holds the semiconductor manufacturing apparatus component 101 , and is formed from, for example, a heat-resistant material such as carbon and quartz.
  • the component holding portion 102 is configured to support the semiconductor manufacturing apparatus component 101 and to maintain the supported state. At this time, it is preferable to hold the semiconductor manufacturing apparatus component 101 in order for the entire surface thereof to be processed.
  • a configuration of holding the semiconductor manufacturing apparatus component 101 is not particularly limited, but for example, a configuration of providing a groove, into which a part of the semiconductor manufacturing apparatus component 101 is inserted, in the surface of the component holding portion 102 may be exemplified.
  • the semiconductor manufacturing apparatus component 101 is pressed into the groove and is held therein.
  • a configuration of providing a hooking portion that hooks the semiconductor manufacturing apparatus component 101 in the component holding portion 102 is possible.
  • the hooking-type component holding portion 102 hooks and holds the semiconductor manufacturing apparatus component 101 , and thus a contact area between the semiconductor manufacturing apparatus component 101 and the component holding portion 102 may be made as small as possible. Accordingly, a non-washed portion of the semiconductor manufacturing apparatus component 101 may be made as small as possible.
  • a plurality of penetration holes may be formed in the component holding portion 102 .
  • a halogen-containing gas supplied from a lower side easily flows to an upper side. According to this, the halogen-containing gas easily comes into contact with the semiconductor manufacturing apparatus component 101 that is held by the component holding portion 102 . Accordingly, a washing process of the component holding portion 102 may be carried out in a more efficient manner.
  • the shape of the penetration holes is not particularly limited as long as the component holding portion 102 has strength capable of holding the semiconductor manufacturing apparatus component 101 .
  • the shape of the penetration holes may be a rectangle or circle.
  • the component holding portion 102 may be formed in a lattice shape.
  • the halogen-containing gas is introduced from a container 109 in which the halogen-containing gas is filled to the inside of the reaction tank 103 through the gas introducing pipe 104 .
  • an inert gas may be introduced from a container 110 in which the inert gas is filled to the inside of the reaction tank 103 so as to regulate a concentration of the halogen-containing gas.
  • an introduction amount of each of the halogen-containing gas and the inert gas may be regulated by the gas introducing valve 111 .
  • the gas discharging pipe 105 is connected to a vacuum pump 113 through a gas discharging valve 112 , and thus the inside of the reaction tank 103 may be set to a decompressed state.
  • the gas discharging pipe 105 and the vacuum pump 113 may be connected to an exhaust gas elimination processing device (not shown) as necessary, and thus the reaction product discharged from the reaction tank 103 may be discharged to the air after being detoxified.
  • FIG. 1 illustrates the gas introducing pipe 104 and the gas discharging pipe 105 are connected to a lower portion of the reaction tank 103 , but these members may be connected to a side portion or an upper portion of the reaction tank 103 , and a connection portion is not particularly limited.
  • the heating device 106 includes, for example, a heating unit capable of heating the inside of the reaction tank 103 , and a temperature regulator which is capable of regulating an output of the heating unit to maintain the inside of the reaction tank 103 at a constant temperature.
  • a heating unit such as a heating wire and lamp heating may be used, and an arbitrary unit capable of heating the semiconductor manufacturing apparatus component 101 may be used.
  • the washing apparatus 100 may further include a recovery unit 114 that recovers a nitride semiconductor from the discharged reaction product.
  • the recovery unit 114 includes a recovery portion 115 that is connected to the gas discharging pipe 105 , and a container 116 in which an NH 3 (ammonia) gas is filled.
  • the discharged reaction product is trapped inside the recovery portion 115 .
  • the recovery portion 115 is connected to the container 116 , and according to this, the NH 3 gas may be introduced to the inside of the recovery portion 115 .
  • the recovery portion 115 is formed from, for example, a material such as carbon, quartz, stainless steel, hastelloy, carbon nitride, silicon nitride, boron nitride, and borosilicon nitride which have heat resistance, and corrosion resistance against the halogen-containing gas.
  • a material such as carbon, quartz, stainless steel, hastelloy, carbon nitride, silicon nitride, boron nitride, and borosilicon nitride which have heat resistance, and corrosion resistance against the halogen-containing gas.
  • an introduction port capable of introducing a reaction product an introduction port capable of introducing an NH 3 gas
  • an exhaust port capable of discharging an exhaust gas are provided to the recovery portion 115 .
  • the semiconductor manufacturing apparatus component 101 a component of an MOCVD apparatus or the like which is an apparatus of manufacturing a nitride semiconductor, and in which contamination due to an adhesion is severe is applicable. Particularly, application of components such as susceptor and a wafer tray which are at the periphery of a reaction furnace is effective.
  • a method for washing the semiconductor manufacturing apparatus component 101 according to the first embodiment includes a first process of disposing the semiconductor manufacturing apparatus component 101 , to which a nitride semiconductor adheres, inside the reaction tank 103 , a second process of setting the inside of the reaction tank 103 to a decompressed state, and then introducing a halogen-containing gas from the gas introducing pipe 104 , and a third process of retaining the halogen-containing gas inside the reaction tank 103 to remove the nitride semiconductor adhered to the semiconductor manufacturing apparatus component 101 .
  • a pressure inside the reaction tank 103 in the third process is equal to or more than 10 kPa and equal to or less than 90 kPa.
  • the semiconductor manufacturing apparatus component 101 to which the nitride semiconductor adheres, inside the semiconductor apparatus is taken out, and is disposed in the component holding portion 102 inside the reaction tank 103 .
  • the number of the semiconductor manufacturing apparatus components 101 is not particularly limited, but one or more components may be disposed.
  • the inside of the reaction tank 103 is heated by the heating device 106 to a desired temperature to be described later, and is further set to a decompressed state by the vacuum pump 113 .
  • the pressure inside the reaction tank 103 is preferably equal to or less than 1 kPa, and more preferably equal to or less than 0.1 kPa.
  • the pressure is set to be equal to or less than the upper limit, an amount of the halogen-containing gas to be introduced may be increased, and an unpreferred side reaction due to a residual gas may be suppressed, and thus the reaction product may be removed in a more efficient manner.
  • heating may be carried out after setting the inside of the reaction tank 103 to a decompressed state, or the heating operation and the decompression operation may be carried out simultaneously.
  • the sequence of the heating operation and the decompression operation is not particularly limited as long as the inside finally reaches the above-described temperature and the pressure.
  • the gas introducing valve 111 is opened to introduce the halogen-containing gas to the inside of the reaction tank 103 .
  • halogen-containing gas for example, one kind of compound such as Cl 2 , HCl, SiCl 4 , SiHCl 3 , SiH 2 Cl 2 , SiH 3 Cl, BCl 3 , CHCl 3 , CH 2 Cl 2 , and CH 3 Cl which contain chlorine in a molecule, or a mixture of two or more kinds of these compounds is used.
  • Cl 2 is particularly preferable from the viewpoint of the balance in price, reactivity, and the like.
  • an inert gas may be introduced from the container 110 to the inside of the reaction tank 103 together with the introduction of the halogen-containing gas as necessary. Due to the introduction of the inert gas, a concentration of the halogen-containing gas may be regulated.
  • the inert gas for example, anyone kind of gas such as nitrogen, helium, and argon which does not react with the halogen-containing gas, or a mixed gas of two or more kinds of the gases may be used.
  • a concentration of the halogen-containing gas inside the reaction tank 103 when introducing the inert gas is not particularly limited. However, when the concentration is too high, the semiconductor manufacturing apparatus component itself may be corroded in some cases, and thus the concentration is appropriately set depending on the kind of the component.
  • the concentration of the halogen-containing gas inside the reaction tank 103 when introducing the inert gas is not particularly limited, but it is preferable that the concentration be equal to or more than 5% by volume, and more preferably equal to or more than 10% by volume.
  • concentration is set to be equal to or more than the lower limit, a reaction rate between the nitride semiconductor and the halogen-containing gas increases, and thus the nitride semiconductor adhered to the semiconductor manufacturing apparatus component may be removed in a more efficient manner.
  • the concentration of the halogen-containing gas is not particularly limited, but it is preferable that the concentration be equal to or less than 100% by volume, and more preferably equal to or less than 80% by volume. When the concentration is set to be equal to or less than the upper limit, the amount of the halogen-containing gas may be less, and thus corrosion of components constituting an apparatus may be suppressed.
  • the halogen-containing gas is retained inside the reaction tank 103 for a constant time.
  • the nitride semiconductor adhered to the semiconductor manufacturing apparatus component 101 react with the halogen-containing gas, and thus a reaction product such as gallium halide is generated.
  • the reaction product immediately evaporates to a vapor, and this vapor floats inside the reaction tank 103 .
  • the internal pressure of the reaction tank 103 in the third process is equal to or more than 10 kPa, preferably equal to or more than 12 kPa, and more preferably equal to or more than 15 kPa.
  • the internal pressure is set to be equal to or more than the lower limit, a reaction rate between the nitride semiconductor and the halogen-containing gas increases, and thus the nitride semiconductor adhered to the semiconductor manufacturing apparatus component may be efficiently removed.
  • the internal pressure is equal to or less than 90 kPa, preferably equal to or less than 85 kPa, and more preferably equal to or less than 80 kPa.
  • the internal pressure is set to be equal to or less than the upper limit, an average free process of the reaction product may be lengthened, and thus diffusion efficiency of the reaction product increases. As a result, reaction efficiency between the nitride and the halogen-containing gas may increase.
  • the internal temperature of the reaction tank 103 in the third process is not particularly limited, it is preferable that the internal temperature be equal to or higher than 500° C., and more preferably equal to or higher than 750° C.
  • the internal temperature is set to be equal to or higher than the lower limit, a volatilization rate of the reaction product increases, and thus the nitride semiconductor adhered to the semiconductor manufacturing apparatus component may be removed in a more efficient manner.
  • the internal temperature be equal to or lower than 1000° C., and more preferably equal to or lower than 800° C.
  • the internal temperature is set to be equal to or lower than the upper limit, thermal deformation of the semiconductor manufacturing apparatus component 101 may be further prevented.
  • a retention time of the halogen-containing gas in the third process is appropriately set depending on the size of the reaction tank 103 , the throughput of the semiconductor manufacturing apparatus component 101 , and the like.
  • the gas introducing valve 111 and the gas discharging valve 112 are preferably completely closed in the third process to maintain sealability, but may not be closed.
  • the gas introducing valve 111 and the gas discharging valve 112 may be regulated in order for the internal pressure of the reaction tank 103 to satisfy the above-described pressure range.
  • the halogen-containing gas is retained inside the reaction tank 103 for a constant time, and the gas discharging valve 112 is opened to remove the vapor of the reaction product from the gas discharging pipe 105 .
  • the inside of the reaction tank 103 is returned to the atmospheric pressure by opening the gas introducing pipe 104 to introduce the inert gas from the container 110 to the reaction tank 103 , a vapor of the reaction product is discharged.
  • the inert gas is introduced, the vapor of the reaction product is pushed out by the inert gas, and thus vapor may be discharged in a more efficient manner.
  • the inert gas that is used the above-described inert gas may be used, or other gases may be used.
  • from the second process to the fourth process are preferably carried out two or more times.
  • the processes are carried out two or more times, the surface of the semiconductor manufacturing apparatus component 101 is more activated, and thus reaction efficiency between the nitride and the halogen-containing gas may be further raised.
  • the number of repetitions is appropriately set depending on the size of the reaction tank 103 , the throughput of the semiconductor manufacturing apparatus component 101 , or the like.
  • the recovery method is not particularly limited. However, for example, as shown in FIG. 2 , a vapor of the reaction product discharged from the gas discharging pipe 105 is trapped by the recovery portion 115 . Then, an NH 3 gas is introduced from the container 116 to the recovery portion 115 to allow the reaction product and the NH 3 gas to react with each other, thereby generating a solid such as a gallium compound. Since the fifth process is carried out, an amount of the exhaust gas that is harmful may be reduced.
  • the semiconductor manufacturing apparatus component 101 is washed has been described, but the main body of the semiconductor manufacturing apparatus may be disposed inside the reaction tank 103 and may be washed therein. However, in this case, it is necessary to pay attention in order for the semiconductor manufacturing apparatus itself not to be damaged.
  • a hydrogen-based gas such as hydrogen, methane, and ethane which include hydrogen in a molecule
  • an inert gas such as argon, helium, and nitrogen that dilutes the hydrogen-based gas so as to remove a halogen compound that remains in a state of adhering to a component.
  • the second embodiment is basically the same as the washing apparatus 100 according to the first embodiment except that a trapping unit 117 traps a reaction product of the nitride semiconductor and the halogen-containing gas. Accordingly, in the second embodiment, description will be focused to portions different from the first embodiment, and description of common portions will not be repeated.
  • FIG. 3 shows a cross-sectional diagram illustrating a configuration of a washing apparatus according to a second embodiment.
  • the washing apparatus 100 includes a component holding portion 102 that holds a semiconductor manufacturing apparatus component 101 to which a nitride semiconductor expressed by a general formula of Al x In y Ga 1-x-y N (provided that, x and y satisfy relationships of 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, and 0 ⁇ x+y ⁇ 1) adheres, a reaction tank 103 that accommodates a component holding portion 102 , a gas introducing pipe 104 that introduces a halogen-containing gas to react with the nitride semiconductor, a trapping unit 117 that traps a reaction product of the nitride semiconductor and the halogen-containing gas, and a gas discharging pipe 105 that discharges the reaction product.
  • a component holding portion 102 that holds a semiconductor manufacturing apparatus component 101 to which a nitride semiconductor expressed by a general formula of Al x In y
  • the washing apparatus 100 further includes a washing processing portion 118 , and a cooling portion 119 that cools the trapping unit 117 , and the washing apparatus 100 has a configuration in which the component holding portion 102 is disposed inside the washing processing portion 118 , and the trapping unit 117 is disposed inside the cooling portion 119 .
  • the washing apparatus 100 Since the washing apparatus 100 has this configuration, a washing process of the semiconductor manufacturing apparatus component, and trapping of the reaction product are clearly classified. Furthermore, a vapor of the reaction product trapped by the trapping unit 117 is cooled by the cooling portion 119 , and the reaction product may be allowed to precipitate. Accordingly, adhesion of the reaction product to the semiconductor manufacturing apparatus component or a not-preferred portion inside the washing apparatus may be further suppressed, and thus reaction product may be trapped in a more efficient manner.
  • the trapping unit 117 is not particularly limited, but a cooling panel is preferable.
  • the cooling panel When using the cooling panel, the vapor of the reaction product may be cooled in a more efficient manner, and thus the reaction product may be trapped in a more efficient manner.
  • the trapping unit 117 be formed from, for example, a material such as carbon, quartz, stainless steel, hastelloy, silicon carbide, silicon nitride, and boron nitride which do not react with the reaction product.
  • quartz is preferable from the viewpoint of excellent heat resistance.
  • the reaction stated here represents an irreversible reaction such as corrosion. However, a case of simple precipitation and a case of absorption are not included in the reaction.
  • the cooling portion 119 have a function of regulating a temperature of the inside of the trapping unit 117 .
  • the trapped reaction product may be converted into a vapor again. Accordingly, the reaction product may be discharged from the gas discharging pipe 105 in a more efficient manner.
  • a function of a temperature control fluid circulator 120 and the like may be exemplified.
  • the cooling portion 119 may be set to a low temperature.
  • the cooling portion 119 may be set to a high temperature.
  • a temperature of the water that cools the cooling portion 119 is preferably equal to or higher than 0° C. and equal to or lower than 40° C.
  • a temperature of the oil that makes the cooling portion 119 warm is preferably equal to or higher than 80° C. and equal to or lower than 200° C.
  • FIG. 3 illustrates that the gas introducing pipe 104 is connected to an upper portion of the reaction tank 103 , but the gas introducing pipe 104 may be connected to a side portion or a lower portion of the reaction tank 103 , and the connection portion is not particularly limited.
  • a connection portion of the gas discharging pipe 105 is not particularly limited, but the gas discharging pipe 105 is preferably connected to the trapping unit 117 . According to this connection, the reaction product trapped by the trapping unit 117 may be efficiently discharged.
  • the washing apparatus 100 may further include a recovery unit 114 that recovers a nitride semiconductor from the reaction product that is discharged.
  • the recovery unit 114 includes a recovery portion 115 that is connected to the gas discharging pipe 105 , and a container 116 in which an NH 3 (ammonia) gas is filled, and the reaction product that is discharged is trapped inside the recovery portion 115 .
  • the recovery portion 115 is connected to the container 116 , and thus the ammonia gas may be introduced to the inside of the recovery portion 115 .
  • the recovery portion 115 may be formed from, for example, a material such as carbon, quartz, stainless steel, hastelloy, carbon nitride, silicon nitride, boron nitride, and borosilicon nitride which have heat resistance, and corrosion resistance against the halogen-containing gas.
  • a material such as carbon, quartz, stainless steel, hastelloy, carbon nitride, silicon nitride, boron nitride, and borosilicon nitride which have heat resistance, and corrosion resistance against the halogen-containing gas.
  • an introduction port capable of introducing the reaction product an introduction port capable of introducing the ammonia gas, and an exhaust port capable of discharging an exhaust gas are provided to the recovery portion 115 .
  • a plurality of traps 121 may be provided between the gas discharging pipe 105 and the recovery portion 115 .
  • the traps 121 may collect the reaction product discharged from the gas discharging pipe 105 .
  • a distance from the gas discharging pipe 105 to the traps 121 or the recovery portion 115 be short.
  • a distance at which the vapor of the reaction product diffuses may be made to be short, and thus the vapor may be further prevented from precipitating midway.
  • the semiconductor manufacturing apparatus component 101 a component of an MOCVD apparatus or the like which is an apparatus of manufacturing a nitride semiconductor, and in which contamination due to an adhesion is severe is applicable. Particularly, application of components such as susceptor and a wafer tray which are at the periphery of a reaction furnace is effective.
  • washing apparatus 100 Next, a method for washing the semiconductor manufacturing apparatus component 101 to which a nitride semiconductor adheres by using the washing apparatus 100 according to the second embodiment will be described, but the washing method according to the second embodiment is not limited thereto. In addition, description will also be focused to portions different from the first embodiment, and description of common portions will not be repeated.
  • the method for washing the semiconductor manufacturing apparatus component 101 includes a first process of disposing the semiconductor manufacturing apparatus component 101 , to which a nitride semiconductor adheres, inside an apparatus, a second process of introducing the halogen-containing gas from the gas introducing pipe 104 to remove the nitride semiconductor adhered to the semiconductor manufacturing apparatus component 101 , and a third process of trapping the reaction product that is generated in the reaction between the halogen-containing gas and the nitride semiconductor.
  • the semiconductor manufacturing apparatus component 101 to which the nitride semiconductor adheres, inside the semiconductor apparatus is taken out, and is disposed in the component holding portion 102 inside the reaction tank 103 .
  • the washing apparatus 100 further includes the washing processing portion 118 and the cooling portion 119 , the component holding portion 102 is disposed inside the washing processing portion 118 .
  • the number of the semiconductor manufacturing apparatus components 101 that are disposed is not particularly limited, but one or more components may be disposed.
  • the inside of the reaction tank 103 or the washing processing portion 118 is heated by a heating device 106 to a desired temperature to be described later as necessary.
  • the inside of the reaction tank 103 or the washing processing portion 118 may be further set to a decompressed state by a vacuum pump 113 .
  • the pressure inside the reaction tank 103 or the washing processing portion 118 is preferably equal to or less than 1 kPa, and more preferably equal to or less than 0.1 kPa.
  • the pressure is set to be equal to or less than the upper limit, an amount of the halogen-containing gas to be introduced may be increased, and an unpreferred side reaction due to a residual gas may be suppressed, and thus the reaction product may be removed in a more efficient manner.
  • heating may be carried out after setting the inside of the reaction tank 103 to a decompressed state, or the heating operation and the decompression operation may be carried out simultaneously.
  • the sequence of the heating operation and the decompression operation is not particularly limited as long as the inside finally reaches the above-described temperature and the pressure.
  • a gas introducing valve 111 is opened, and a halogen-containing gas is introduced to the inside of the reaction tank 103 .
  • the same halogen-containing gas as the first embodiment may be used.
  • the nitride semiconductor adhered to the semiconductor manufacturing apparatus component 101 reacts with the halogen-containing gas, whereby a reaction product such as gallium halide is generated.
  • the reaction product immediately evaporates to a vapor, and this vapor floats inside the reaction tank 103 or the washing processing portion 118 and the trapping unit 117 .
  • the halogen-containing gas be retained inside the apparatus by closing the gas introducing valve 111 and the gas discharging valve 112 so as to allow a reaction between the halogen-containing gas and the nitride semiconductor to occur.
  • a reaction rate between the halogen-containing gas and the nitride semiconductor may be improved, and thus a used amount of the halogen-containing gas may be further reduced.
  • the gas introducing valve 111 and the gas discharging valve 112 may not be completely closed.
  • the gas introducing valve 111 is closed to retain the halogen-containing gas inside the reaction tank 103 or the washing processing portion 118 and the trapping unit 117 for a constant time.
  • the internal pressure of the reaction tank 103 or the washing processing portion 118 in the second process is preferably equal to or more than 10 kPa, and more preferably equal to or more than 12 kPa.
  • the internal pressure is set to be equal to or more than the lower limit, a reaction rate between the nitride semiconductor and the halogen-containing gas increases, and thus the nitride adhered to the semiconductor manufacturing apparatus component may be removed in more efficient manner.
  • the internal pressure is preferably equal to or less than 90 kPa, and more preferably equal to or less than 85 kPa.
  • the internal pressure is set to be equal to or less than the upper limit, the average free process of the reaction product may be lengthened, and thus diffusion efficiency of the reaction product increases. As a result, reaction efficiency between the nitride and the halogen-containing gas may further increase.
  • the internal temperature of the reaction tank 103 or the washing processing portion 118 in the second process is preferably equal to or higher than 500° C., and more preferably equal to or higher than 750° C.
  • the internal temperature is set to be equal to or higher than the lower limit, a volatilization rate of the reaction product increases, and thus the nitride semiconductor adhered to the semiconductor manufacturing apparatus component may be removed in a more efficient manner.
  • the internal temperature be equal to or lower than 1000° C., and more preferably equal to or lower than 800° C.
  • the internal temperature is set to be equal to or lower than the upper limit, thermal deformation of the semiconductor manufacturing apparatus component 101 may be further prevented.
  • a retention time of the halogen-containing gas in the second process is appropriately set depending on the size of the reaction tank 103 , the throughput of the semiconductor manufacturing apparatus component 101 , and the like.
  • the reaction product generated by the reaction between the halogen-containing gas and the nitride semiconductor is trapped by the trapping unit 117 .
  • water supplied from the temperature control fluid circulator 120 is allowed to flow the cooling portion 119 , thereby cooling the trapping unit 117 .
  • the vapor of the reaction product is cooled at the inside of the trapping unit 117 , and precipitates to the surface of the trapping unit 117 , and is trapped thereon.
  • the second process and the third process are preferably carried out simultaneously.
  • the gas discharging valve 112 is opened to discharge an exhaust gas such as an unreacted halogen-containing gas and not-trapped gas from the gas discharging pipe 105 .
  • the exhaust gas is discharged.
  • the inert gas is introduced, the exhaust gas is pushed out by the inert gas, and thus exhaust gas may be discharged in a more efficient manner.
  • the inert gas that is used the above-described inert gas may be used, or other gases may be used.
  • the method for washing the semiconductor manufacturing apparatus component 101 using the washing apparatus 100 from the introduction of the halogen-containing gas to the discharging of the exhaust gas are preferably carried out two or more times.
  • the surface of the semiconductor manufacturing apparatus component 101 is further activated, and thus reaction efficiency between the nitride and the halogen-containing gas may be further raised.
  • the number of repetitions is appropriately set depending on the size of the reaction tank 103 or the washing processing portion 118 , the throughput of the semiconductor manufacturing apparatus component 101 , or the like.
  • a method of discharging the reaction product is not particularly limited, but for example, high-temperature oil is allowed to flow from the temperature control fluid circulator 120 to the cooling portion 119 so as to make the trapping unit 117 warm. In this case, the reaction product precipitated on the surface of the trapping unit 117 is converted into a vapor again, and is discharged from the gas discharging pipe 105 .
  • the inside of the reaction tank 103 is returned to the atmospheric pressure by opening the gas introducing pipe 104 to introduce the inert gas from the container 110 to the reaction tank 103 , a vapor of the reaction product is discharged.
  • the inert gas is introduced, the vapor of the reaction product is pushed out by the inert gas, and thus vapor may be discharged in a more efficient manner.
  • the inert gas that is used the above-described inert gas may be used, or other gases may be used.
  • the fourth process be carried out after the first process to the third process are repetitively carried out to collect a constant amount of the reaction product that is trapped by the trapping unit 117 .
  • the number of repetitions is appropriately set depending on a trapped amount of the reaction product.
  • the recovering method is not particularly limited, but may be carried out using, for example, an apparatus shown in FIG. 5 .
  • a vapor of the reaction product discharged from the gas discharging pipe 105 is trapped by the recovery portion 115 .
  • the ammonia gas is introduced from the container 116 to the recovery portion 115 to allow a gallium halide contained in the reaction product and the ammonia to react with each other, thereby generating a solid of the gallium compound and the like.
  • an amount of the exhaust gas that is harmful may be reduced.
  • the reaction product may be transmitted to the recovery portion 115 after trapping and collecting a constant amount of discharged reaction product by a plurality of traps 121 provided between the gas discharging pipe 105 and the recovery portion 115 .
  • a process of recovering the gallium compound may be carried out in stages.
  • the main body of the semiconductor manufacturing apparatus may be disposed inside the reaction tank 103 and may be washed therein.
  • FIG. 7 shows a cross-sectional diagram illustrating a configuration of the vapor phase growth apparatus 200 according to the third embodiment.
  • the vapor phase growth apparatus 200 is an apparatus that supplies a first raw material gas containing gallium and a second raw material gas containing ammonia to a substrate 201 inside a reaction tank 203 to allow a nitride semiconductor expressed by a general formula of Al x In y Ga 1-x-y N (provided that, x and y satisfy relationships of 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, and 0 ⁇ x+y ⁇ 1) to grow on the substrate 201 .
  • the vapor phase growth apparatus 200 includes the reaction tank 203 , a substrate holding portion 202 , a gas introducing pipe 204 , a trapping unit 217 , and a gas discharging pipe 205 .
  • the first raw material gas containing gallium, or the second raw material gas containing ammonia may be supplied from the gas introducing pipe 204 toward the substrate 201 . Furthermore, a halogen-containing gas may be introduced from the gas introducing pipe 204 to the inside of the reaction tank 203 to remove a contaminant adhered to various components inside the vapor phase growth apparatus 200 . The removed contaminant may be discharged from the gas discharging pipe 205 .
  • a heating device 206 that heats the inside of the reaction tank 203 , and a pressure gauge 208 that monitors a pressure inside the reaction tank 203 may be provided at the periphery of the reaction tank 203 as necessary.
  • a material of the reaction tank 203 is not particularly limited, but the reaction tank 203 is formed from, for example, a heat-resistant material such as quartz.
  • the substrate holding portion 202 is disposed inside the reaction tank 203 , and the substrate 201 on which the nitride semiconductor is allowed to grow is disposed on the substrate holding portion 202 .
  • the shape or size of the reaction tank 203 may be appropriately determined depending on the size of the substrate 201 or throughput.
  • the trapping unit 217 takes on a role of trapping a reaction product that is generated by reaction between a contaminant such as GaN, and the halogen-containing gas.
  • a contaminant such as GaN
  • the contaminant such as GaN is apt to adhere to various components such as a tray that supports the substrate and a gas flow channel other than the substrate. Therefore, it is necessary for the contaminated component to be washed once before manufacturing a new semiconductor.
  • a halogen-containing gas is introduced to the reaction tank 203 through the gas introducing pipe 204 to carry out washing of various components inside the reaction tank 203 within the vapor phase growth apparatus 200 .
  • the trapping unit 217 takes on a role of trapping a reaction product between the halogen-containing gas and the contaminant. Since the reaction product is trapped by the trapping unit 217 , adhesion of the reaction product to other components may be suppressed, and thus the adhered contaminant may be efficiently removed. Accordingly, in the vapor phase growth apparatus 200 provided with the trapping unit 217 , it is not necessary for the contaminated component to be detached and washed once, and thus the nitride semiconductor product may be manufactured with a good yield rate.
  • the vapor phase growth apparatus 200 further includes a cooling portion 219 that cools the trapping unit 217 , and vapor phase growth apparatus 200 has a configuration in which the substrate holding portion 202 is disposed inside the reaction tank 203 , and the trapping unit 217 is disposed inside the cooling portion 219 .
  • the vapor phase growth apparatus 200 Since the vapor phase growth apparatus 200 has this configuration, a washing process of the component inside the vapor phase growth apparatus 200 , and trapping of the reaction product are clearly classified. Furthermore, a vapor of the reaction product trapped by the trapping unit 217 is cooled by the cooling portion 219 , and the reaction product may be allowed to precipitate. Accordingly, adhesion of the reaction product to components inside the vapor phase growth apparatus 200 may be further suppressed, and thus the reaction product may be trapped in a more efficient manner.
  • the trapping unit 217 is not particularly limited as long as the trapping unit 217 can trap the reaction product, but a cooling panel is preferable. When using the cooling panel, the vapor of the reaction product may be cooled in a more efficient manner, and thus the reaction product may be trapped in a more efficient manner.
  • the trapping unit 217 be formed from, for example, a material such as carbon, quartz, stainless steel, hastelloy, silicon carbide, silicon nitride, and boron nitride which do not react with the reaction product.
  • quartz is preferable from the viewpoint of excellent heat resistance.
  • the reaction stated here represents an irreversible reaction such as corrosion. However, a case of simple precipitation and a case of absorption are not included in the reaction.
  • the cooling portion 219 have a function of regulating a temperature of the inside of the trapping unit 217 .
  • the trapped reaction product may be converted into a vapor again. Accordingly, the reaction product may be discharged from the gas discharging pipe 205 in a more efficient manner.
  • a function of a temperature control fluid circulator 220 and the like may be exemplified.
  • the cooling portion 219 may be set to a low temperature.
  • the cooling portion 119 may be set to a high temperature.
  • a temperature of the cooling water that cools the cooling portion 219 is preferably equal to or higher than 0° C. and equal to or lower than 40° C.
  • a temperature of the oil that makes the cooling portion 219 warm is preferably equal to or higher than 80° C. and equal to or lower than 200° C.
  • the substrate holding portion 202 is a member that holds the substrate 201 , and is formed from, for example, a heat-resistant material such as carbon and quartz.
  • the substrate holding portion 202 is configured to support the substrate 201 and to maintain the supported state.
  • the first raw material gas containing gallium or the second raw material gas containing ammonia is introduced from a first raw material gas generating chamber 223 or a container 218 in which the second raw material gas is filled to the inside of the reaction tank 203 through the gas introducing pipe 204 .
  • an introduction amount of each of the first raw material gas and the second raw material gas may be regulated by a gas introducing valve 211 .
  • the halogen-containing gas is introduced from a container 210 in which the halogen-containing gas is filled to the inside of the reaction tank 203 through the gas introducing pipe 204 .
  • an inert gas may be introduced from a container 222 in which the inert gas is filled so as to regulate a concentration of the halogen-containing gas.
  • an introduction amount of each of the halogen-containing gas and the inert gas may be regulated by the gas introducing valve 211 .
  • One port of the gas introducing pipe 204 is connected to the inside of the reaction tank 203 , and the other port is connected to the container 210 in which the halogen-containing gas is filled, the first raw material gas generating chamber 223 , the container 218 in which the second raw material gas is filled, and the container 222 in which the inert gas is filled.
  • the gas discharging pipe 205 is connected to a vacuum pump 213 through a gas discharging valve 212 , and according to this, the inside of the reaction tank 203 may be set to a decompressed state. Furthermore, the gas discharging pipe 205 and the vacuum pump 213 may be connected to an exhaust gas elimination processing device (not shown) as necessary, and thus the reaction product discharged from the reaction tank 203 may be discharged to the air after being detoxified.
  • FIGS. 7 and 8 illustrate that the gas introducing pipe 204 is connected to an upper portion of the reaction tank 203 , but the gas introducing pipe 204 may be connected to a side portion or a lower portion of the reaction tank 203 , and the connection portion is not particularly limited.
  • a case in which one of the gas introducing pipe 204 is provided for the respective gases is shown.
  • a gas introducing pipe dedicated for each gas may be provided, and a common gas introducing pipe as shown in FIGS. 7 and 8 is also possible.
  • a connection site of the gas discharging pipe 205 is not particularly limited, but the gas discharging pipe 205 is preferably connected to the trapping unit 217 as shown in FIGS. 7 and 8 . According to this connection, the reaction product trapped by the trapping unit 217 may be efficiently discharged.
  • the heating device 206 includes a heating unit that heats the inside of the reaction tank 203 , and a temperature regulator which is capable of regulating an output of the heating unit to maintain the inside of the reaction tank 203 at a constant temperature.
  • a heating unit such as a heating wire and lamp heating may be used, and an arbitrary unit capable of heating the inside of the vapor phase growth apparatus 200 may be used.
  • the vapor phase growth apparatus 200 may further include a recovery unit 214 that recovers a gallium compound from the discharged reaction product.
  • the recovery unit 214 includes a recovery portion 215 that is connected to the gas discharging pipe 205 , and a container 216 in which ammonia is filled. The discharged reaction product is trapped inside the recovery portion 215 .
  • the recovery portion 215 is connected to the container 216 , and according to this, the ammonia may be introduced to the inside of the recovery portion 215 .
  • the recovery portion 215 is formed from, for example, a material such as carbon, quartz, stainless steel, hastelloy, carbon nitride, silicon nitride, boron nitride, and borosilicon nitride which have heat resistance, and corrosion resistance against the halogen-containing gas.
  • a material such as carbon, quartz, stainless steel, hastelloy, carbon nitride, silicon nitride, boron nitride, and borosilicon nitride which have heat resistance, and corrosion resistance against the halogen-containing gas.
  • an introduction port capable of introducing a reaction product an introduction port capable of introducing the ammonia
  • a plurality of traps 221 may be provided between the gas discharging pipe 205 and the recovery portion 215 .
  • the traps 221 may collect the reaction product discharged from the gas discharging pipe 205 .
  • a distance from the gas discharging pipe 205 to the traps 221 or the recovery portion 215 be short.
  • a distance at which the vapor of the reaction product diffuses may be made to be short, and thus precipitation of the vapor midway may be further suppressed.
  • a vapor phase growth method particularly, a Metal Organic Chemical Vapor Deposition (MOCVD) method, or a Hydride Vapor Phase Epitaxy (HVPE) method is used.
  • MOCVD Metal Organic Chemical Vapor Deposition
  • HVPE Hydride Vapor Phase Epitaxy
  • a nitride semiconductor layer is grown on the substrate 201 using the general MOCVD method or HVPE method.
  • MOCVD method general MOCVD method
  • HVPE method manufacturing of the nitride semiconductor according to the HVPE method will be described.
  • the substrate 201 is placed inside the reaction tank 203 , and a temperature inside the reaction tank 203 is raised to a constant temperature.
  • the first raw material gas containing gallium is introduced from the first raw material gas generating chamber 223 to the inside of the reaction tank 203 through the gas introducing pipe 204 .
  • the first raw material gas generating chamber 223 will be described.
  • the first raw material gas generating chamber 223 is connected to the container 209 in which the halogen-containing gas is filled, and includes a source boat that accommodates Ga at the inside thereof.
  • halogen-containing gas filled in the container 210 for example, one kind of compound such as Cl 2 , HCl, SiCl 4 , SiHCl 3 , SiH 2 Cl 2 , SiH 3 Cl, BCl 3 , CHCl 3 , CH 2 Cl 2 , and CH 3 Cl which contain chlorine in a molecule, or a mixture of two or more kinds of these compounds is used.
  • Cl 2 is particularly preferable from the viewpoint of the balance in price, reactivity, and the like.
  • the second raw material gas which is filled in the container 218 and contains ammonia is introduced to the inside of the reaction tank 203 simultaneously with the introduction of the first raw material gas containing gallium.
  • GaCl that is the first raw material gas and ammonia that is the second raw material gas react with each other, whereby GaN, hydrogen chloride, and hydrogen are generated, and GaN grows on the substrate 201 as a nitride semiconductor layer.
  • the hydrogen chloride and hydrogen are discharged as an exhaust gas, and the hydrogen chloride that is harmful to the human body is removed by a detoxifying device (not shown).
  • a method of forming the nitride semiconductor layer is not limited to the HVPE method described above, and other methods may be used.
  • washing operation of removing the contaminant adhered to various components inside the vapor phase growth apparatus 200 will be described, but the washing operation of removing the contaminant by the vapor phase growth apparatus 200 is not limited thereto.
  • the substrate 201 on which the nitride semiconductor layer is formed is taken out from the reaction tank 203 , and the inside of the reaction tank 203 is heated by the heating device 206 to a desired temperature to be described later as necessary.
  • the inside of the reaction tank 203 may be further set to a decompressed state by the vacuum pump 213 .
  • a pressure inside the reaction tank 203 is preferably equal to or less than 1 kPa, and more preferably equal to or less than 0.1 kPa.
  • the pressure is set to be equal to or less than the upper limit, an amount of the halogen-containing gas to be introduced may be increased, and a not-preferable side reaction due to a residual gas may be suppressed, and thus the reaction product may be removed in a more efficient manner.
  • heating may be carried out after setting the inside of the reaction tank 203 to a decompressed state, or the heating operation and the decompression operation may be carried out simultaneously.
  • the sequence of the heating operation and the decompression operation is not particularly limited as long as the inside finally reaches the above-described temperature and the pressure.
  • the gas introducing valve 211 is opened to introduce the halogen-containing gas to the inside of the reaction tank 203 .
  • halogen-containing gas for example, one kind of compound such as Cl 2 , HCl, SiCi 4 , SiHCl 3 , SiH 2 Cl 2 , SiH 3 Cl, BCl 3 , CHCl 3 , CH 2 Cl 2 , and CH 3 Cl which contain chlorine in a molecule, or a mixture of two or more kinds of these compounds is used.
  • Cl 2 is particularly preferable from the viewpoint of the balance in price, reactivity, and the like.
  • an inert gas may be introduced from the container 210 to the inside of the reaction tank 203 together with the introduction of the halogen-containing gas as necessary. Due to the introduction of the inert gas, a concentration of the halogen-containing gas may be regulated.
  • the inert gas for example, any one kind of a gas such as nitrogen, helium, and argon which do not react with the halogen-containing gas, or a mixed gas of two or more kinds of the gases may be used.
  • a gas such as nitrogen, helium, and argon which do not react with the halogen-containing gas, or a mixed gas of two or more kinds of the gases may be used.
  • a concentration of the halogen-containing gas inside the reaction tank 203 when introducing the inert gas is not particularly limited. However, when the concentration is too high, various components themselves inside the vapor phase growth apparatus 200 are corroded in some cases, and thus the concentration is appropriately set depending on a degree of contamination and the like.
  • the concentration of the halogen-containing gas inside the reaction tank 203 when introducing the inert gas is not particularly limited, but it is preferable that the concentration be equal to or more than 5% by volume, and more preferably equal to or more than 10% by volume.
  • concentration is set to be equal to or more than the lower limit, a reaction rate between the contaminant and the halogen-containing gas increases, and thus the contaminant adhered to various components inside the vapor phase growth apparatus 200 may be removed in a more efficient manner.
  • the concentration of the halogen-containing gas is not particularly limited, but it is preferable that the concentration be equal to or less than 100% by volume, and more preferably equal to or less than 80% by volume.
  • concentration is set to be equal to or less than the upper limit, the amount of the halogen-containing gas may be small, and thus corrosion of components constituting an apparatus may be suppressed.
  • the contaminant such as gallium nitride which adhered to the various components reacts with the halogen-containing gas, and thus a reaction product such as gallium halide is generated.
  • the reaction product immediately evaporates to a vapor, and this vapor floats inside the reaction tank 203 and the trapping unit 217 .
  • the halogen-containing gas be retained inside the apparatus by closing the gas introducing valve 211 and the gas discharging valve 212 so as to allow a reaction between the halogen-containing gas and the contaminant to occur.
  • a reaction rate between the halogen-containing gas and the contaminant may be improved, and thus a used amount of the halogen-containing gas may be further reduced.
  • the gas introducing valve 211 and the gas discharging valve 212 may not be completely closed.
  • the gas introducing valve 211 is closed to retain the halogen-containing gas inside the reaction tank 203 and the trapping unit 217 for a constant time.
  • the internal pressure of the reaction tank 203 is preferably equal to or more than 10 kPa, and more preferably equal to or more than 12 kPa.
  • the internal pressure is set to be equal to or more than the lower limit, a reaction rate between the contaminant and the halogen-containing gas increases, and thus the contaminant adhered to the various components inside the vapor phase growth apparatus 200 may be removed in a more efficient manner.
  • the internal pressure is preferably equal to or less than 90 kPa, and more preferably equal to or less than 85 kPa.
  • the internal pressure is set to be equal to or less than the upper limit, the average free process of the reaction product may be lengthened, and thus diffusion efficiency of the reaction product increases. As a result, reaction efficiency between the contaminant and the halogen-containing gas may further increase.
  • the internal temperature of the reaction tank 203 at this time is preferably equal to or higher than 500° C., and more preferably equal to or higher than 750° C.
  • the internal temperature is set to be equal to or higher than the lower limit, a volatilization rate of the reaction product increases, and thus the contaminant adhered to the various components inside the vapor phase growth apparatus 200 may be removed in a more efficient manner.
  • the internal temperature be equal to or lower than 1000° C., and more preferably equal to or lower than 800° C.
  • the internal temperature is set to be equal to or lower than the upper limit, thermal deformation of the various components inside the vapor phase growth apparatus 200 may be further prevented.
  • a retention time of the halogen-containing gas is appropriately set depending on the size of the reaction tank 203 , the throughput of the various components inside the vapor phase growth apparatus 200 , and the like.
  • the reaction product generated by the reaction between the halogen-containing gas and the contaminant is trapped by the trapping unit 217 .
  • water supplied from the temperature control fluid circulator 220 is allowed to flow the cooling portion 219 , thereby cooling the trapping unit 217 .
  • the vapor of the reaction product is cooled at the inside of the trapping unit 217 , and precipitates to the surface of the trapping unit 217 , and is trapped thereon.
  • the gas discharging valve 212 is opened to discharge an exhaust gas such as an unreacted halogen-containing gas and not-trapped gas from the gas discharging pipe 205 .
  • the exhaust gas is discharged.
  • the inert gas is introduced, the exhaust gas is pushed out by the inert gas, and thus exhaust gas may be discharged in a more efficient manner.
  • the inert gas that is used the above-described inert gas may be used, or other gases may be used.
  • the processes are preferably carried out two or more times.
  • the surface of the various components is further activated, and thus reaction efficiency between the contaminant and the halogen-containing gas may be further raised.
  • the number of repetitions is appropriately set depending on the size of the reaction tank 203 , the throughput of the various components, or the like.
  • a method of discharging the reaction product is not particularly limited, but for example, high-temperature oil is allowed to flow from the temperature control fluid circulator 220 to the cooling portion 219 so as to make the trapping unit 217 warm. In this case, the reaction product precipitated on the surface of the trapping unit 217 is converted into a vapor again, and is discharged from the gas discharging pipe 205 .
  • the inside of the reaction tank 203 is returned to the atmospheric pressure by opening the gas introducing pipe 204 to introduce the inert gas from the container 210 to the reaction tank 203 , a vapor of the reaction product is discharged.
  • the inert gas is introduced, the vapor of the reaction product is pushed out by the inert gas, and thus vapor may be discharged in a more efficient manner.
  • the inert gas that is used the above-described inert gas may be used, or other gases may be used.
  • the trapped reaction product be discharged.
  • the number of repetitions is appropriately set depending on a trapped amount of the reaction product.
  • the recovering method is not particularly limited, but may be carried out using, for example, an apparatus shown in FIG. 9 .
  • a vapor of the reaction product discharged from the gas discharging pipe 205 is trapped by the recovery portion 215 .
  • the ammonia gas is introduced from the container 216 to the recovery portion 215 to allow a gallium halide contained in the reaction product and the ammonia to react with each other, thereby generating a solid of the gallium compound and the like. Since the gallium compound is recovered from the reaction product, an amount of the exhaust gas that is harmful may be reduced.
  • the reaction product may be transmitted to the recovery portion 215 after trapping and collecting a constant amount of discharged reaction product by a plurality of traps 221 provided between the gas discharging pipe 205 and the recovery portion 215 .
  • a process of recovering the gallium compound may be carried out in stages.
  • a semiconductor manufacturing apparatus component to which GaN adhered was disposed in the component holding portion inside the reaction tank, and a temperature inside the reaction tank was set to 750° C., and a pressure inside the reaction tank was set to be equal to or less than 0.1 kPa.
  • a N 2 gas was introduced to the inside of the reaction tank, the pressure was set to 20 kPa, and then a Cl 2 gas was introduced to the inside of the reaction tank to set the pressure to 40 kPa (a pressure of the Cl 2 gas was 20 kPa). Retention was carried out as is for 10 minutes, and then an exhaust valve was opened to discharge a vapor of a reaction product.
  • reaction efficiency was calculated using the following Expression (1).
  • the washing process was carried out in the same manner as Example 1 except that serial operations of the introduction of the N 2 gas, the introduction of the Cl 2 gas, the retention for 10 minutes, and the discharging of the reaction product were carried out four times. Obtained results are shown in Table 1.
  • a semiconductor manufacturing apparatus component to which GaN adhered was disposed in the component holding portion inside the reaction tank, and the temperature inside the reaction tank were set to 730° C., and the pressure inside the reaction tank was set to be equal to or less than 0.1 kPa.
  • the N 2 gas was introduced to the inside of the reaction tank, the pressure was set to 10 kPa, and then the Cl 2 gas was introduced to the inside of the reaction tank to set the pressure to 30 kPa. Retention was carried out as is for 10 minutes, and then the exhaust valve was opened to discharge a vapor of a reaction product. Continuously, serial operations of the introduction of N 2 gas, the introduction of Cl 2 gas, the retention for 10 minutes, and the discharging of the reaction product were carried out two times.
  • a component to which GaN adhered was disposed in the component holding portion inside the reaction tank, and the temperature inside the reaction tank was set to 800° C.
  • a mixed gas of the Cl 2 gas and the N 2 gas was supplied to the inside of the reaction tank for 30 minutes.
  • a flow rate of the Cl 2 gas was set to 0.3 L/min
  • a flow rate of the N 2 gas was set to 0.3 L/min.
  • the atmosphere inside of the reaction tank was substituted with N 2 , and the weight of the component to which GaN adhered was measured. GaN that was removed was 1.0 g (0.011 moles), an amount of the Cl 2 gas that was used was totally 9.0 L (0.37 moles). Accordingly, the reaction efficiency was 5%.
  • Example 8 the washing apparatus shown in FIGS. 4 and 5 was used.
  • a semiconductor manufacturing apparatus component to which GaN adhered was disposed in the component holding portion inside a washing processing portion, and a temperature inside the washing processing portion was set to 750° C.
  • water in a water temperature of 25° C. was circulated to the cooling portion by the temperature control fluid circulator at a flow rate of 2 L/min.
  • the pressure inside the washing processing portion was set to be equal to or less than 0.1 kPa by operating the vacuum pump.
  • the pressure was set to 20 kPa by introducing the N 2 gas to the inside of the washing processing portion, and then the pressure was set to 40 kPa by introducing the Cl 2 gas to the inside of the reaction tank. Retention was carried out as is for 10 minutes, the exhaust valve was opened to discharge the exhaust gas. Serial operations of the introduction of the N 2 gas, the introduction of the Cl 2 gas, the retention for 10 minutes, and the discharging of the exhaust gas were carried out four times.
  • reaction efficiency was calculated using the following Expression (1).
  • gallium compounds such as an oligomer (NH 2 GaCl 2 ) n containing NH 4 Cl and Ga, and GaN were trapped from the recovery portion.

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Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
JP6499493B2 (ja) * 2015-04-10 2019-04-10 株式会社ニューフレアテクノロジー 気相成長方法
JP6679413B2 (ja) * 2016-05-23 2020-04-15 大陽日酸株式会社 気相成長装置用部品の洗浄装置
JP6852040B2 (ja) 2018-11-16 2021-03-31 大陽日酸株式会社 半導体製造装置部品の洗浄装置、半導体製造装置部品の洗浄方法、及び半導体製造装置部品の洗浄システム
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Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551197A (en) * 1984-07-26 1985-11-05 Guilmette Joseph G Method and apparatus for the recovery and recycling of condensable gas reactants
US6203618B1 (en) * 1998-03-31 2001-03-20 Canon Kabushiki Kaisha Exhaust system and vacuum processing apparatus
US6212789B1 (en) * 1998-06-19 2001-04-10 Canon Sales Co., Inc. Semiconductor device manufacturing system
US6223684B1 (en) * 1997-07-07 2001-05-01 Canon Kabushiki Kaisha Film deposition apparatus
US20020069825A1 (en) * 2000-12-11 2002-06-13 Tanaka Kikinzoku Kogyo K.K Low-pressure CVD apparatus and method of manufacturing a thin film
US20020185068A1 (en) * 2001-06-07 2002-12-12 Alexander Gurary Reactor having a movable shutter
US20030213562A1 (en) * 2002-05-17 2003-11-20 Applied Materials, Inc. High density plasma CVD chamber
US20040008160A1 (en) * 2002-02-12 2004-01-15 Etheridge Eric P. Architecture providing increased information display for long acquisitions or constrained memory bandwidth
US20040081607A1 (en) * 1999-11-24 2004-04-29 Tokyo Electron Limited Exhaust apparatus for process apparatus and method of removing impurity gas
US20040231711A1 (en) * 2003-05-23 2004-11-25 Park Cheol-Woo Spin chuck for wafer or LCD processing
US20050047927A1 (en) * 2002-04-19 2005-03-03 Lee Chung J. Process modules for transport polymerization of low epsilon thin films
US20060180026A1 (en) * 2005-02-16 2006-08-17 Youfan Gu Method and apparatus for preventing products of TiCL4 and NH3 or other feed gas reactions from damaging vacuum pumps in TiN or other deposition systems
US20090050057A1 (en) * 2007-08-23 2009-02-26 Von Ardenne Anlagentechnik Gmbh Apparatus for continuous coating

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2614887B1 (fr) * 1987-05-06 1990-11-30 Rhone Poulenc Chimie Procede de recuperation de gallium par extraction liquide-liquide
US6238514B1 (en) * 1999-02-18 2001-05-29 Mks Instruments, Inc. Apparatus and method for removing condensable aluminum vapor from aluminum etch effluent
JP4679720B2 (ja) * 2000-12-22 2011-04-27 東京エレクトロン株式会社 処理装置
US20030216041A1 (en) 2002-05-08 2003-11-20 Herring Robert B. In-situ thermal chamber cleaning
TWI250669B (en) 2003-11-26 2006-03-01 Sanken Electric Co Ltd Semiconductor light emitting element and its manufacturing method
CN2808933Y (zh) * 2005-05-12 2006-08-23 应用材料公司 远程等离子反应器的并合器
JP5021907B2 (ja) 2005-05-24 2012-09-12 大陽日酸株式会社 窒化物半導体製造装置の洗浄方法と洗浄装置
KR100621660B1 (ko) * 2005-07-01 2006-09-11 주식회사 뉴프로텍 반도체 부산물 트랩장치
JP5498640B2 (ja) 2005-10-14 2014-05-21 大陽日酸株式会社 窒化物半導体製造装置部品の洗浄方法と洗浄装置
US9580836B2 (en) 2006-11-22 2017-02-28 Soitec Equipment for high volume manufacture of group III-V semiconductor materials
JP4994197B2 (ja) * 2007-11-16 2012-08-08 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP5011148B2 (ja) * 2008-02-06 2012-08-29 大陽日酸株式会社 半導体装置の製造方法、クリーニング方法及び基板処理装置
JP2010016200A (ja) * 2008-07-03 2010-01-21 Zeta Photon Kk シャドーマスクのクリーニング方法、シャドーマスクのクリーニング装置、有機ｅｌディスプレイの製造方法および有機ｅｌディスプレイの製造装置
JP5260356B2 (ja) * 2009-03-05 2013-08-14 東京エレクトロン株式会社 基板処理方法
JP5302719B2 (ja) 2009-03-10 2013-10-02 大陽日酸株式会社 窒化物半導体製造装置部品の洗浄方法及び洗浄装置
JP5277054B2 (ja) 2009-04-08 2013-08-28 大陽日酸株式会社 窒化物半導体製造装置における汚染部品の洗浄装置
US8110889B2 (en) * 2009-04-28 2012-02-07 Applied Materials, Inc. MOCVD single chamber split process for LED manufacturing
US20110079251A1 (en) * 2009-04-28 2011-04-07 Olga Kryliouk Method for in-situ cleaning of deposition systems
US20110117728A1 (en) * 2009-08-27 2011-05-19 Applied Materials, Inc. Method of decontamination of process chamber after in-situ chamber clean
JP5454101B2 (ja) 2009-11-25 2014-03-26 横河電機株式会社 ペーパーレスレコーダ
JP2011162261A (ja) 2010-02-08 2011-08-25 Katsuyoshi Fukuyama 内圧排出構造の包装袋

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551197A (en) * 1984-07-26 1985-11-05 Guilmette Joseph G Method and apparatus for the recovery and recycling of condensable gas reactants
US6223684B1 (en) * 1997-07-07 2001-05-01 Canon Kabushiki Kaisha Film deposition apparatus
US6203618B1 (en) * 1998-03-31 2001-03-20 Canon Kabushiki Kaisha Exhaust system and vacuum processing apparatus
US6212789B1 (en) * 1998-06-19 2001-04-10 Canon Sales Co., Inc. Semiconductor device manufacturing system
US20040081607A1 (en) * 1999-11-24 2004-04-29 Tokyo Electron Limited Exhaust apparatus for process apparatus and method of removing impurity gas
US20020069825A1 (en) * 2000-12-11 2002-06-13 Tanaka Kikinzoku Kogyo K.K Low-pressure CVD apparatus and method of manufacturing a thin film
US20020185068A1 (en) * 2001-06-07 2002-12-12 Alexander Gurary Reactor having a movable shutter
US20040008160A1 (en) * 2002-02-12 2004-01-15 Etheridge Eric P. Architecture providing increased information display for long acquisitions or constrained memory bandwidth
US20050047927A1 (en) * 2002-04-19 2005-03-03 Lee Chung J. Process modules for transport polymerization of low epsilon thin films
US20030213562A1 (en) * 2002-05-17 2003-11-20 Applied Materials, Inc. High density plasma CVD chamber
US20040231711A1 (en) * 2003-05-23 2004-11-25 Park Cheol-Woo Spin chuck for wafer or LCD processing
US20060180026A1 (en) * 2005-02-16 2006-08-17 Youfan Gu Method and apparatus for preventing products of TiCL4 and NH3 or other feed gas reactions from damaging vacuum pumps in TiN or other deposition systems
US20090050057A1 (en) * 2007-08-23 2009-02-26 Von Ardenne Anlagentechnik Gmbh Apparatus for continuous coating

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