US20120326803A1 - Microwave resonant cavity - Google Patents

Microwave resonant cavity Download PDF

Info

Publication number
US20120326803A1
US20120326803A1 US13/529,110 US201213529110A US2012326803A1 US 20120326803 A1 US20120326803 A1 US 20120326803A1 US 201213529110 A US201213529110 A US 201213529110A US 2012326803 A1 US2012326803 A1 US 2012326803A1
Authority
US
United States
Prior art keywords
microwave
sidewall
resonant cavity
longitudinal axis
recited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/529,110
Other languages
English (en)
Inventor
Sang Hun Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Amarante Technologies Inc
Original Assignee
Amarante Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US14/125,038 priority Critical patent/US9237639B2/en
Priority to PCT/US2012/043482 priority patent/WO2012177834A2/en
Priority to JP2014517143A priority patent/JP2014524106A/ja
Priority to EP12802585.5A priority patent/EP2724416A4/en
Priority to KR1020147000416A priority patent/KR20140026605A/ko
Priority to CA2838946A priority patent/CA2838946A1/en
Application filed by Amarante Technologies Inc filed Critical Amarante Technologies Inc
Priority to US13/529,110 priority patent/US20120326803A1/en
Priority to CN201280031152.7A priority patent/CN103636059B/zh
Assigned to AMARANTE TECHNOLOGIES, INC. reassignment AMARANTE TECHNOLOGIES, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LEE, SANG HUN
Publication of US20120326803A1 publication Critical patent/US20120326803A1/en
Priority to HK14104078.1A priority patent/HK1191137A1/zh
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/02—Circuits or systems for supplying or feeding radio-frequency energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4622—Microwave discharges using waveguides

Definitions

  • the present invention relates to plasma generators, and more particularly to systems having a resonant cavity for generating a plasma thererin.
  • microwave technology has been applied to generate various types of plasma.
  • igniting and sustaining plasma requires a high power microwave generator.
  • the existing microwave techniques are not suitable, or at best, highly inefficient due to one or more of the following drawbacks.
  • scalability refers to the ability of a system to handle varying amounts of microwave input power in a graceful manner or its ability to be enlarged/reduced to accommodate the variation of the input power.
  • the required microwave input power may vary depending on the types, pressure, and flow rates of the gas to be converted into plasma.
  • the economics of scale for a magnetron increases rapidly as the output power increases.
  • a microwave resonant cavity includes: a sidewall having a generally cylindrical hollow shape and formed of a material opaque to a microwave; a gas flow tube disposed inside the sidewall, formed of a material transparent to a microwave, and having a longitudinal axis substantially parallel to a longitudinal axis of the sidewall; a plurality of microwave waveguides, each said microwave waveguide having a longitudinal axis substantially perpendicular to the longitudinal axis of the sidewall and having a distal end secured to the sidewall and aligned with a corresponding one of a plurality of holes formed on the sidewall; a top plate formed of a material opaque to a microwave and secured to one end of the sidewall; and a sliding short circuit.
  • the sliding circuit includes: a disk formed of a material opaque to a microwave and slidably mounted between the sidewall and the gas flow tube, the disk having an outer rim snuggly fit into the sidewall and a hole into which the gas flow tube being snuggly fit; and at least one bar disposed inside the sidewall and arranged parallel to the longitudinal axis of the sidewall. By moving the bar along the longitudinal direction of the sidewall, the space defined by the top plate, sidewall, and the disk is adjusted to form a microwave resonant cavity inside the gas flow tube.
  • FIG. 1 is a schematic diagram of a plasma generating system in accordance with one embodiment of the present invention.
  • FIG. 2 is an exploded perspective view of the microwave resonant cavity in FIG. 1 .
  • FIGS. 3A-3B are top views of alternative embodiments of the microwave resonant cavity in FIG. 2 .
  • FIGS. 4A-4C are perspective views of alternative embodiments of the microwave resonant cavity in FIG. 1 .
  • FIG. 5 is a schematic cross sectional view of an alternative embodiment of the microwave resonant cavity in FIG. 2 .
  • FIG. 6 is a schematic cross sectional view of an alternative embodiment of the microwave resonant cavity in FIG. 2 .
  • FIG. 1 is a schematic diagram of a system 10 for generating microwave plasma in accordance with one embodiment of the present invention.
  • the system 10 may include: a microwave resonant cavity 26 ; microwave supply units 11 a - 11 c for providing microwaves to the microwave resonant cavity 26 ; and waveguides 24 a - 24 c for transmitting microwaves from the microwave supply units 11 a - 11 c to the microwave resonant cavity 26 , where the microwave resonant cavity 26 receives a gas and/or gas mixture from a gas tank 28 or another source such as flue gas.
  • the microwave supply unit 11 a provides microwaves to the microwave resonant cavity 26 and may include: a microwave generator 12 a for generating microwaves; a power supply 13 a for supplying power to the microwave generator 12 a ; and an isolator 15 a having a dummy load 16 a for dissipating reflected microwaves that propagate toward the microwave generator 12 a and a circulator 18 a for directing the reflected microwaves to the dummy load 16 a.
  • the microwave supply unit 11 a further includes a coupler 20 a for measuring fluxes of the microwaves; and a tuner 22 a for reducing the microwaves reflected from the microwave resonant cavity 26 .
  • the components of the microwave supply unit 11 a shown in FIG. 1 are well known and are listed herein for exemplary purposes only. Also, it is possible to replace the microwave supply unit 11 a with a system having the capability to provide microwaves to the microwave resonant cavity 26 without deviating from the present invention.
  • a phase shifter may be mounted between the isolator 15 a and the coupler 20 a.
  • the microwave supply units 11 b and 11 c are shown to have similar components as the microwave supply units 11 a . However, it is noted that the microwave supply units 11 b and 11 c may have components different from those of the unit 11 a , insofar as they can generate and deliver microwaves to the waveguides 24 b and 24 c , respectively.
  • FIG. 2 is an exploded perspective view of the microwave resonant cavity 26 in FIG. 1 .
  • the microwave resonant cavity (shortly, cavity hereinafter) 26 includes a top plate 41 having an inlet port 51 for receiving gas 53 from the gas tank 28 ; a bottom plate 43 having an outlet port (or, outlet hole) 44 for discharging gas therethrough; and a sidewall 42 connected to the distal ends of the waveguides 24 a - 24 c .
  • the distal end of the waveguide 24 a is secured to the sidewall 42 so that the microwave energy flowing through the proximal end 40 a of the waveguide 24 a enters into the sidewall 42 .
  • the top plate 41 , sidewall 42 , and bottom plate 43 may be formed of any suitable material, such as metal, that is opaque to the microwave.
  • the cavity 26 also includes a gas flow tube 46 that is transparent to the microwave and preferably formed of quartz.
  • the top and bottom ends of the gas flow tube 46 are sealed to the top plate 41 and the bottom plates 43 of the cavity 26 , respectively, so that the gas entered into the tube 46 through the inlet port 51 is excited into plasma and exits through the outlet port 44 of the bottom plate 43 .
  • the microwave energy received through the waveguides 24 a - 24 c excites the gas into plasma when the gas flows through the gas flow tube 46 .
  • the cavity 26 may also include a sliding short 48 having a disk 49 and bars 50 .
  • the disk 49 is dimensioned to slidably fit into the space between the inner surface of the sidewall 42 and the outer surface of the gas flow tube 46 , and formed of material opaque to the microwave, preferably metal.
  • the microwaves discharged from the distal ends of the waveguides 24 a - 24 c form an interference pattern in the gas flow tube 46 .
  • the distance between the disk 49 and the top plate 41 is changed so that the interference generates a peak amplitude region in the gas flow tube 46 , i.e., the impedance matching may be obtained by adjusting the location of the disk 49 relative to the top plate 41 .
  • the bars may be attached to a suitable tuning mechanism, such as a micrometer fixed to the outer surface of the bottom plate 43 so that the user can tune the impedance at high precision
  • a motor attached to the bars 50 may be used for an automated control.
  • the microwaves generated by the three microwave supply units 11 a - 11 c are combined in the gas flow tube 46 .
  • the maximum intensity of microwave field within the gas flow tube 46 would be the same as the intensity generated by one microwave supply unit that has the output power three times as large as the microwave supply unit 11 a .
  • This feature provides two advantages; scalability and cost reduction in manufacturing a microwave supply unit.
  • the operator of the system 10 may selectively turn on the microwave supply units 11 a - 11 c so that the intensity of the microwave field in the gas flow tube 46 may be varied. For instance, the microwave intensity for igniting the plasma in the gas flow tube 46 may vary depending on the types of gas 53 .
  • the operator may optimize the microwave intensity in the gas flow tube 46 by selectively turning on the microwave supply units 11 a - 11 c . It is noted that the system 10 has only three microwave supply unit. However, it should be apparent to those of ordinary skill in the art that the system may include any other suitable number of microwave supply units.
  • the price of the microwave generator 12 a increases rapidly as its power output increases. For instance, the price of ten magnetrons of the commercially available microwave oven is considerably lower than that of one high power magnetron which has an output power ten times that of the microwave oven.
  • the multiple microwave generators feature of the system 10 allows the designer to build a low cost microwave generating system without compromising the total maximum power.
  • FIGS. 3A-3C are top views of alternative embodiments 60 , 70 , and 80 of the cavity sidewall 42 in FIG. 2 .
  • the sidewall may have a suitable polygonal shape, such as rectangle, hexagon, or octagon, where a waveguide may be fixed to each side of the polygon.
  • the phases of the microwaves exiting from two adjacent waveguides may be differentiated so that the interference between the microwaves generates the maximum intensity in the gas flow tubes 62 , 72 , and 82 .
  • gas flow tubes 62 , 72 , and 82 may have other suitable cross sectional geometry, such as rectangle, hexagon, or octagon.
  • the angle ⁇ shown in FIG. 1
  • the angle ⁇ shown in FIG. 1
  • FIG. 4A is a perspective view of an alternative embodiment 100 of the cavity 26 in FIG. 1 .
  • the cavity 100 is similar to the cavity 26 in FIG. 1 , with the difference that the waveguides 102 a - 102 c are e-plane waveguides.
  • FIGS. 4B and 4C are perspective views of alternative embodiments 114 and 124 of the cavity 26 in FIG. 1 .
  • the cavities 114 and 124 are similar to the cavity 26 , with the differences that the locations of the waveguides 112 a - 112 c and 122 a - 122 c relative to the sidewalls of the cavities 114 and 124 are different.
  • the locations of the waveguides are determined to optimize the interference pattern in the gas flow tubes (not shown in FIGS. 4B-4C for brevity) disposed within the cavities 114 and 124 .
  • FIG. 5 is a schematic cross sectional view of an alternative embodiment 200 of the microwave resonant cavity 26 in FIG. 2 .
  • the cavity 200 includes a top plate 241 having an inlet hole 243 for receiving gas from the gas tank 28 (not shown in FIG. 5 ); a sidewall 242 connected to the distal ends of the waveguides 224 a - 224 b ; a gas flow tube 246 having a bottom hole 244 for discharging gas therethorugh; and sliding short circuit 248 having a disk 249 and bars 250 . Since the materials and functions of the components of the cavity 200 are similar to those of their counterparts of the cavity 26 , the detailed description is not repeated. The difference between the cavities 26 and 200 is that the cavity 200 does not have a bottom plate while the cavity 26 includes the bottom plate 43 .
  • FIG. 6 is a schematic cross sectional view of an alternative embodiment 300 of the cavity 26 in FIG. 2 .
  • the cavity 300 is similar to the cavity 26 , with the difference that the top and bottom portions of the gas flow tube 346 protrude outside the top plate 341 and the bottom plate 343 , respectively.
  • the gas flow tube 346 includes a top hole 343 and a bottom hole 344 for receiving and discharging the gas therethrough.
  • the gas flow tube 360 may have a gas inlet port 360 in place of the hole 343 , where the inlet port 360 is angled with respect to the longitudinal axis of the gas flow tube 346 to impart swirling motion to the injected gas.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Waveguide Connection Structure (AREA)
US13/529,110 2011-06-24 2012-06-21 Microwave resonant cavity Abandoned US20120326803A1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
PCT/US2012/043482 WO2012177834A2 (en) 2011-06-24 2012-06-21 Microwave resonant cavity
JP2014517143A JP2014524106A (ja) 2011-06-24 2012-06-21 マイクロ波共鳴空洞
EP12802585.5A EP2724416A4 (en) 2011-06-24 2012-06-21 MICROWAVE RESONANCE CAVITY
KR1020147000416A KR20140026605A (ko) 2011-06-24 2012-06-21 마이크로웨이브 공진 캐비티
CA2838946A CA2838946A1 (en) 2011-06-24 2012-06-21 Microwave resonant cavity
US14/125,038 US9237639B2 (en) 2011-06-24 2012-06-21 Microwave resonant cavity
US13/529,110 US20120326803A1 (en) 2011-06-24 2012-06-21 Microwave resonant cavity
CN201280031152.7A CN103636059B (zh) 2011-06-24 2012-06-21 微波谐振腔
HK14104078.1A HK1191137A1 (zh) 2011-06-24 2014-04-29 微波諧振腔

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161500624P 2011-06-24 2011-06-24
US13/529,110 US20120326803A1 (en) 2011-06-24 2012-06-21 Microwave resonant cavity

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US14/125,038 Continuation US9237639B2 (en) 2011-06-24 2012-06-21 Microwave resonant cavity

Publications (1)

Publication Number Publication Date
US20120326803A1 true US20120326803A1 (en) 2012-12-27

Family

ID=47361299

Family Applications (2)

Application Number Title Priority Date Filing Date
US13/529,110 Abandoned US20120326803A1 (en) 2011-06-24 2012-06-21 Microwave resonant cavity
US14/125,038 Active 2032-10-01 US9237639B2 (en) 2011-06-24 2012-06-21 Microwave resonant cavity

Family Applications After (1)

Application Number Title Priority Date Filing Date
US14/125,038 Active 2032-10-01 US9237639B2 (en) 2011-06-24 2012-06-21 Microwave resonant cavity

Country Status (8)

Country Link
US (2) US20120326803A1 (zh)
EP (1) EP2724416A4 (zh)
JP (1) JP2014524106A (zh)
KR (1) KR20140026605A (zh)
CN (1) CN103636059B (zh)
CA (1) CA2838946A1 (zh)
HK (1) HK1191137A1 (zh)
WO (1) WO2012177834A2 (zh)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180258809A1 (en) * 2017-03-10 2018-09-13 Fujitsu Limited Exhaust purification apparatus, automobile, and management system
US10424462B2 (en) * 2013-11-06 2019-09-24 Tokyo Electron Limited Multi-cell resonator microwave surface-wave plasma apparatus
US10603617B2 (en) 2015-10-30 2020-03-31 Fujitsu Limited Microwave irradiation apparatus and exhaust gas purification apparatus
WO2020197702A1 (en) * 2019-03-25 2020-10-01 Recarbon, Inc. Controlling exhaust gas pressure of a plasma reactor for plasma stability
US11183369B2 (en) * 2018-12-27 2021-11-23 Industrial Technology Research Institute Focalized microwave plasma reactor
US11195699B2 (en) * 2015-10-29 2021-12-07 Applied Materials, Inc. Generalized cylindrical cavity system for microwave rotation and impedance shifting by irises in a power-supplying waveguide
US11358869B2 (en) * 2017-08-08 2022-06-14 H Quest Vanguard, Inc. Methods and systems for microwave assisted production of graphitic materials

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104064441B (zh) * 2014-06-12 2016-05-04 单家芳 用于等离子体光源的微波谐振腔
DE102018000401A1 (de) * 2018-01-19 2019-07-25 Ralf Spitzl Mikrowellenplasmavorrichtung
KR20190089408A (ko) * 2018-01-22 2019-07-31 카길 인코포레이티드 마이크로웨이브를 이용한 음식 조리하는 방법 및 시스템
CN111511090B (zh) * 2020-04-13 2022-05-10 北京工业大学 微波等离子体反应器
CN115665914B (zh) * 2022-12-22 2023-03-10 河北科技大学 多源微波加热装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5525864A (en) * 1994-02-07 1996-06-11 Hughes Aircraft Company RF source including slow wave tube with lateral outlet ports
US20040246079A1 (en) * 2003-03-31 2004-12-09 Tdk Corporation Method and apparatus for measuring complex dielectric constant of dielectric
US7551042B1 (en) * 2006-06-09 2009-06-23 Johnson Ray M Microwave pulse compressor using switched oversized waveguide resonator
US7589470B2 (en) * 2006-01-31 2009-09-15 Dublin City University Method and apparatus for producing plasma

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3129814B2 (ja) * 1992-01-17 2001-01-31 新日本無線株式会社 マイクロ波プラズマ装置
JP2779997B2 (ja) * 1993-03-22 1998-07-23 日本電信電話株式会社 プラズマ処理装置
FR2695944B1 (fr) * 1992-09-24 1994-11-18 Onera (Off Nat Aerospatiale) Appareil de dépôt chimique en phase vapeur activé par un plasma micro-ondes.
EP0702393A3 (en) * 1994-09-16 1997-03-26 Daihen Corp Plasma processing apparatus for introducing a micrometric wave from a rectangular waveguide, through an elongated sheet into the plasma chamber
US5793013A (en) * 1995-06-07 1998-08-11 Physical Sciences, Inc. Microwave-driven plasma spraying apparatus and method for spraying
DE19600223A1 (de) * 1996-01-05 1997-07-17 Ralf Dr Dipl Phys Spitzl Vorrichtung zur Erzeugung von Plasmen mittels Mikrowellen
US6175095B1 (en) * 1999-03-18 2001-01-16 Gasonics International Resonant impedance-matching slow-wave ring structure microwave applicator for plasmas
DE19963122A1 (de) * 1999-12-24 2001-06-28 Tetra Laval Holdings & Finance Anordnung zum Einkoppeln von Mikrowellenenergie in eine Behandlungskammer
WO2003096769A1 (fr) * 2002-05-07 2003-11-20 Toshiyuki Takamatsu Systeme de traitement par reaction haute frequence
US7806077B2 (en) * 2004-07-30 2010-10-05 Amarante Technologies, Inc. Plasma nozzle array for providing uniform scalable microwave plasma generation
US7338575B2 (en) * 2004-09-10 2008-03-04 Axcelis Technologies, Inc. Hydrocarbon dielectric heat transfer fluids for microwave plasma generators
JP4022590B2 (ja) 2005-03-25 2007-12-19 株式会社エーイーティー マイクロ波プラズマ発生装置
EP2007175A4 (en) * 2006-03-07 2014-05-14 Univ Ryukyus PLASMA GENERATOR AND METHOD FOR PRODUCING PLASMA THEREFOR
CN100541907C (zh) * 2006-03-16 2009-09-16 长飞光纤光缆有限公司 可调谐等离子体谐振腔
US8236144B2 (en) 2007-09-21 2012-08-07 Rf Thummim Technologies, Inc. Method and apparatus for multiple resonant structure process and reaction chamber
US7921804B2 (en) * 2008-12-08 2011-04-12 Amarante Technologies, Inc. Plasma generating nozzle having impedance control mechanism

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5525864A (en) * 1994-02-07 1996-06-11 Hughes Aircraft Company RF source including slow wave tube with lateral outlet ports
US20040246079A1 (en) * 2003-03-31 2004-12-09 Tdk Corporation Method and apparatus for measuring complex dielectric constant of dielectric
US7589470B2 (en) * 2006-01-31 2009-09-15 Dublin City University Method and apparatus for producing plasma
US7551042B1 (en) * 2006-06-09 2009-06-23 Johnson Ray M Microwave pulse compressor using switched oversized waveguide resonator

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10424462B2 (en) * 2013-11-06 2019-09-24 Tokyo Electron Limited Multi-cell resonator microwave surface-wave plasma apparatus
US11195699B2 (en) * 2015-10-29 2021-12-07 Applied Materials, Inc. Generalized cylindrical cavity system for microwave rotation and impedance shifting by irises in a power-supplying waveguide
US11972930B2 (en) 2015-10-29 2024-04-30 Applied Materials, Inc. Cylindrical cavity with impedance shifting by irises in a power-supplying waveguide
US10603617B2 (en) 2015-10-30 2020-03-31 Fujitsu Limited Microwave irradiation apparatus and exhaust gas purification apparatus
US20180258809A1 (en) * 2017-03-10 2018-09-13 Fujitsu Limited Exhaust purification apparatus, automobile, and management system
US11358869B2 (en) * 2017-08-08 2022-06-14 H Quest Vanguard, Inc. Methods and systems for microwave assisted production of graphitic materials
US12084348B2 (en) 2017-08-08 2024-09-10 H Quest Vanguard, Inc. Methods and systems for microwave assisted production of graphitic materials
US11183369B2 (en) * 2018-12-27 2021-11-23 Industrial Technology Research Institute Focalized microwave plasma reactor
WO2020197702A1 (en) * 2019-03-25 2020-10-01 Recarbon, Inc. Controlling exhaust gas pressure of a plasma reactor for plasma stability

Also Published As

Publication number Publication date
HK1191137A1 (zh) 2014-07-18
CN103636059A (zh) 2014-03-12
US20140125215A1 (en) 2014-05-08
CA2838946A1 (en) 2012-12-27
KR20140026605A (ko) 2014-03-05
JP2014524106A (ja) 2014-09-18
EP2724416A2 (en) 2014-04-30
CN103636059B (zh) 2016-01-27
EP2724416A4 (en) 2014-12-17
US9237639B2 (en) 2016-01-12
WO2012177834A2 (en) 2012-12-27
WO2012177834A3 (en) 2013-04-18

Similar Documents

Publication Publication Date Title
US9237639B2 (en) Microwave resonant cavity
RU2342734C2 (ru) Плазменная сопловая решетка для обеспечения генерирования однородной расширяющейся микроволновой плазмы
US20070115071A1 (en) Diagnostic resonant cavity for a charged particle accelerator
US20090302785A1 (en) Slot resonance coupled standing wave linear particle accelerator
RU2010113677A (ru) Способ и устройство для обработки технологического объема посредством множества электромагнитных генераторов
CN102569950B (zh) 微波光子晶体模式转换器
KR20170025508A (ko) 접혀진 형상의 도파관 및 이를 포함하는 진행파관기
WO2015148414A1 (en) Waveguide-based apparatus for exciting and sustaining a plasma
Rykovanov et al. Tunable polarization plasma channel undulator for narrow bandwidth photon emission
Cohen et al. On collisionless ion and electron populations in the magnetic nozzle experiment (MNX)
Zapevalov et al. Various types of echelette resonators for gyrotrons
US20100074810A1 (en) Plasma generating system having tunable plasma nozzle
JP6323849B2 (ja) 電磁導波路およびプラズマ源を含む機器、プラズマ生成方法
Konomi et al. Damped superconducting structure for EUV light source based on energy recovery linac
US20100140509A1 (en) Plasma generating nozzle having impedance control mechanism
JP6715515B2 (ja) 高周波加熱装置
JP4330994B2 (ja) マイクロ波アプリケータシステム
KR101100916B1 (ko) 상압 플라즈마 발생 장치 및 이를 이용한 상압 플라즈마 발생 방법
Prinz et al. Quasi-optical mode converter for a multi-frequency D-band gyrotron
Hayashizaki et al. IH linac with higher order modes
JPH07312453A (ja) マイクロ波励起ガスレーザ装置
Sawant et al. Orbital angular momentum of gyrotron modes
JP2009171094A (ja) 方向性結合器及びそれを用いたプラズマ発生装置
Slepkov et al. Specificity of multiwave interaction of an electronic beam and electromagnetic field in a relativistic diffractive generator
Bondarenko et al. RF photoinjector parameters optimization

Legal Events

Date Code Title Description
AS Assignment

Owner name: AMARANTE TECHNOLOGIES, INC., CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LEE, SANG HUN;REEL/FRAME:028496/0921

Effective date: 20120619

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO PAY ISSUE FEE