US20120017963A1 - Thermoelectric module with insulated substrate - Google Patents

Thermoelectric module with insulated substrate Download PDF

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Publication number
US20120017963A1
US20120017963A1 US13/259,872 US201013259872A US2012017963A1 US 20120017963 A1 US20120017963 A1 US 20120017963A1 US 201013259872 A US201013259872 A US 201013259872A US 2012017963 A1 US2012017963 A1 US 2012017963A1
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US
United States
Prior art keywords
thermoelectric module
substrate
thermoelectric
surface layer
ceramic
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US13/259,872
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English (en)
Inventor
Madalina Andreea STEFAN
Kerstin Schierle-Arndt
Guenther Huber
Frank Haass
John Stuart Blackburn
Ivor Wynn Jones
Francis Stackpool
Stephen Heavens
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BASF SE
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BASF SE
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Assigned to BASF SE reassignment BASF SE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HUBER, GUENTHER, SCHIERLE-ARNDT, KERSTIN, HAASS, FRANK, STEFAN, MADALINA ANDREEA, JONES, IVOR WYNN, STACKPOOL, FRANCIS, BLACKBURN, JOHN STUART, HEAVENS, STEPHEN
Publication of US20120017963A1 publication Critical patent/US20120017963A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N3/00—Generators in which thermal or kinetic energy is converted into electrical energy by ionisation of a fluid and removal of the charge therefrom

Definitions

  • thermoelectric module comprising a series of p and n type semiconductors connected in series by conductive contacts which is supported on a substrate having a specific electrical insulation, as well as a process for preparing the thermoelectric module.
  • Thermoelectric generators and Peltier arrangements as such have been known for some time.
  • p- and n-doped semiconductors which are heated on one side and cooled on the other side transport electrical charges through an external circuit, and electrical work can be performed by a load in the circuit.
  • the efficiency of conversion of heat to electrical energy achieved in this process is limited thermodynamically by the Carnot efficiency.
  • only efficiencies of up to 10% have been achieved to date.
  • thermoelectric generators are used, for example, in space probes for generating direct currents, for cathodic corrosion protection of pipelines, for energy supply to light buoys and radio buoys and for operating radios and television sets.
  • the advantages of thermoelectric generators lie in their extreme reliability. For instance, they work irrespective of atmospheric conditions such as atmospheric moisture; there is no fault-prone mass transfer, but rather only charge transfer. It is possible to use any fuels from hydrogen through natural gas, gasoline, kerosene, diesel fuel up to biologically obtained fuels such as rapeseed oil methyl ester.
  • Thermoelectric energy conversion thus fits extremely flexibly into future requirements such as hydrogen economy or energy generation from renewable energies.
  • thermoelectric generators thermoelectric generators
  • Concentrators such as parabolic troughs can concentrate solar energy into thermoelectric generators, which generates electrical energy.
  • thermoelectrically active materials are rated essentially with reference to their efficiency.
  • a characteristic of thermoelectric materials in this regard is what is known as the Z factor (figure of merit):
  • thermoelectric materials which have a very low thermal conductivity, a very high electrical conductivity and a very large Seebeck coefficient, such that the figure of merit assumes a maximum value.
  • the product S 2 ⁇ (is referred to as the power factor and serves for comparison of the thermoelectric materials.
  • the dimensionless product Z•T is often also reported for comparative purposes.
  • Thermoelectric materials known hitherto have maximum values of Z•T of about 1 at an optimal temperature. Beyond this optimal temperature, the values of Z•T are often significantly lower than 1.
  • thermoelectric material having a maximum value of Z and a high realizable temperature differential. From the point of view of solid state physics, many problems have to be overcome here:
  • a high a requires a high electron mobility in the material, i.e. electrons (or holes in p-conducting materials) must not be bound strongly to the atomic cores.
  • Materials having high electrical conductivity a usually also have a high thermal conductivity (Wiedemann-Franz law), which does not allow Z to be favourably influenced.
  • Materials used at present, such as Bi 2 Te 3 already constitute compromises. For instance, the electrical conductivity is lowered to a lesser extent by alloying than the thermal conductivity. Preference is therefore given to using alloys, for example (Bi 2 Te 3 ) 90 (Sb 2 Te 3 ) 5 (Sb 2 Se 3 ) 5 or Bi 12 Sb 23 Te 65 .
  • thermoelectric materials having high efficiency still further boundary conditions preferably have to be fulfilled. For instance, they have to be sufficiently thermally stable to be able to work under operating conditions over the course of years without significant loss of efficiency. This requires a phase which is thermally stable at high temperatures per se, a stable phase composition, and negligible diffusion of alloy constituents into the adjoining contact materials.
  • thermoelectric module the metals/semiconductor materials are joined together by electrodes (for transportation of the generated current) and electrically isolated from other external parts.
  • the electrodes are contacted with an electrical insulator material which should allow for a good heat flow from a heat source to the thermoelectric material. Therefore, thin insulator material layers are necessary and an excellent contacting interface has to be achieved.
  • thermoelectric modules incorporate ceramic plates, made for example of SiO 2 , Al 2 O 3 or AlN as supports having electrical insulating properties in order to prevent short-circuiting of the generated voltages.
  • Ceramic plates made for example of SiO 2 , Al 2 O 3 or AlN as supports having electrical insulating properties in order to prevent short-circuiting of the generated voltages.
  • a good heat flow from the heat source to the thermoelectric materials is a good thermally conductive substrate and an excellent joining of the parts for a minimal heat loss.
  • several applications for example applications with mobile or vibrating parts, require also good mechanical stability of the substrates.
  • thermoelectric conversion module which includes a good thermally conductive substrate consisting of aluminum or aluminum alloy having an anode oxide film in order to ensure the electrical insulation.
  • the anode oxidation is an oxidative reaction that occurs on the anode upon the electrolysis, and the anode oxide film of Al 2 O 3 is formed on a surface of the aluminum or the aluminum alloy by electrolysing the aluminum or the aluminum alloy in an electrolytic solution such as sulphuric acid.
  • oxide films as disclosed in the US-reference are unreliable for preventing short circuits. Also, for high temperature application like heat recovery from exhaust gas, melting beds, motors, the temperature of the source can be as high as 600° C., and owing to the low melting point of 663° C., aluminum supports cannot be used safely.
  • the object of the present invention is to provide a thermoelectric module having an improved electrical insulating material on the substrate.
  • the substrate should have a higher heat resistance than aluminum.
  • thermoelectric module comprising a series of p and n type semiconductors connected in series by conductive contacts, the conductive contacts being in contact with a substrate of moderate to high thermal conductivity that is electrically insulated from the conductive contacts by a resistive surface layer comprising a ceramic material.
  • the conductive contacts can e.g. be supported on the substrate or on the semiconductors/thermoelectric material.
  • thermoelectric module as defined above, involving the step of applying the resistant surface layer to the substrate by electrophoretic deposition.
  • thermoelectric module for use as a heat pump, for climate control of seating furniture, vehicles and buildings, in refrigerators and (laundry) driers, for simultaneous heating and cooling of streams in processes for substance separation, as a generator for utilizing heat sources or for cooling electronic components.
  • thermoelectric module comprising at least one thermoelectric module as defined above.
  • thermoelectric module according to the present invention it was found that ceramic materials form good and secure thin electrically insulating barrier layers on substrates with a coverage over the entire surface of the module.
  • the thermoelectric module according to the present invention has suitable strength properties, is stable at a continuous operational temperature up to 600° C. and shows good thermal conductivity as well as good electrical resistance.
  • the resistive surface layer is formed by a coating of a ceramic material or a mixture of glass and ceramic material.
  • the ceramic material can be chosen from a wide variety of ceramic materials which have good insulating properties.
  • the ceramic material comprises alumina, zirconia or mixtures thereof.
  • the ceramic material may be employed as a mixture with glass, having a ratio of from 5 to 95% by weight of ceramic material to 95 to 5% by weight of glass, preferably 10 to 90% by weight of ceramic material and 90 to 10% by weight of glass, specifically 20 to 80% by weight of ceramic material and 80 to 20% by weight of glass.
  • the substrate is preferably a metal or a metal alloy, a semimetal, a semiconductor, graphite, electrically conductive ceramics or combinations thereof, preferably a metal or a metal alloy. More preferably, the substrate is a heat resistant steel, iron or nickel alloy.
  • Preferred metal substrates include FeCralloy, Crofer ferritic steel, nickel-plated steel and NiCr-alloys, for example as available under Inconel®. Further metal substrates, which preferably have a higher thermal stability than aluminum or aluminum alloys, are also suited according to the present invention.
  • the geometric form of the substrate can be chosen from any suitable desired form required by the application. There are no restrictions as to the form of the substrate.
  • the metal substrates are flat metal substrates like foils or sheets or derived therefrom by shaping.
  • thermoelectric device in which the substrate is formed directly on the hot surface of a body from which it is desired to recover waste heat, for example from the surface of an engine or exhaust pipes.
  • sheets of the metal substrate can be brought into cylindrical form for inserting in or forming part of an exhaust pipe.
  • the substrate can haven an unrestricted three-dimensional geometric form which preferably can be obtained by forming a substrate sheet.
  • the thickness is small with regard to the other dimensions like in sheets, plates, cylinders, circles, etc.
  • the thickness of the resistive surface layer on the substrate is preferably in the range of from 1 ⁇ m to 500 ⁇ m, more preferably of from 1 to 100 ⁇ m, specifically of from 15 to 35 ⁇ m.
  • thermoelectric module The conductive contacts of the thermoelectric module can be deposited on or applied onto the electrically isolated substrate or they can be deposited on or applied onto the thermoelectric material.
  • thermoelectric design allows for the integration of the electrodes on the coated electrically insulated metal substrate.
  • Electrodes can be prepared by several deposition methods, for example lithography, spray, paint, printing, dipping.
  • the specific resistive surface allows for a very uniform electrode having a thickness as desired. High quality electrodes with thicknesses in the range of from 100 nm to 1 mm electrode can be achieved according to the present invention.
  • thermoelectric materials in a solid matrix
  • the matrix material has a low thermal and electrical conductivity and preferably is a ceramic, glass, mica, aerogel or a combination of these materials.
  • the matrix protects the thermoelectric system (materials and contacts) from degradation and contamination due to external factors like humidity, oxygen or chemicals.
  • This matrix can be clamped or inserted between the two isolated metal substrates.
  • the electrodes can be applied either on the isolated substrate or on the thermoelectric materials.
  • the matrix consists of a material or material mixture with low thermal conductivity, so that the heat flows through the thermoelectric material and not through the matrix. While the above materials are preferred, any non-conductive material with low thermal conductivity may be employed.
  • the resistive surface layer can be applied to the substrate by all suitable processes.
  • the resistive surface layer is applied to the substrate by electrophoretic deposition.
  • Electrophoretic deposition is a term which in context with the invention includes electrocoating, electroplating cathodic electrodeposition, and electrophoretic coating, or electrophoretic painting.
  • a characteristic feature of this process is that colloidal particles suspended in a liquid medium migrate under the influence of an electric field (electrophoresis) and are deposited onto an electrode. All colloidal particles that can form ceramic coating or ceramic containing coatings and can be used to form stable suspensions and that can carry a charge can be used in electrophoretic deposition. This includes material classes such as ceramics and ceramics/glass mixtures.
  • the process is useful for applying materials to any electrically conductive surface.
  • the materials which are being deposited are the major determining factor in the actual processing conditions and equipment which may be used.
  • aqueous EPD Due to the wide utilization of electrophoretic painting processes in many industries, aqueous EPD is the most common commercially used EPD process. However, non-aqueous electrophoretic deposition applications are known. Applications of non-aqueous EPD are used in the fabrication of electronic components and the production of ceramic coatings. Non-aqueous processes have the advantage of avoiding the electrolysis of water and the gas evolution which accompanies electrolysis.
  • This process is industrially used for applying coatings to metal fabricated products. It has been widely used to coat automobile bodies and parts, tractors and heavy equipment, electrical switch gear, appliances, metal furniture, beverage containers, fasteners, and many other industrial products.
  • EPD processes There are two types of EPD processes, anodic and cathodic.
  • anodic process negatively charged material is deposited on the positively charged electrode, or anode.
  • cathodic process positively charged material is deposited on the negatively charged electrode, or cathode.
  • the deposited coating has significantly higher resistance than the object which is being coated. As the deposited film precipitates, the resistance increases. The increase in resistance is proportional to the thickness of the deposited film, and thus, at a given voltage, the electric current decreases as the film gets thicker until it finally reaches a point where deposition has slowed or stopped occurring (self limiting). Thus the applied voltage is the primary control for the amount of film applied.
  • the coating temperature is also variable affecting the EPD process.
  • the coating temperature has an effect on the bath conductivity and deposited film conductivity, which increases as temperature increases. Temperature also has an effect on the viscosity of the deposited film, which in turn affects the ability of the deposited film to release any gas bubbles being formed.
  • organic solvents are used instead of water as the liquid medium.
  • the organic solvents used are generally polar solvents such as alcohols and ketones. Ethanol, acetone, and methyl ethyl ketone are examples of solvents which are suitable candidates for use in electrophoretic deposition.
  • the ceramic material preferably comprises alumina, zirconia, titania, silica, boron oxide or mixtures thereof. Further additives or elements like Ba, Sr, Na, Li, K, Pb, Ta, Hf, W, Mo, Cr, Ir, La, In, Ga, typically their oxides, may be present.
  • the electrophoretic deposition is optionally followed by isostatic pressing followed by sintering to near theoretical density in order to achieve good mechanical stability and good electrical insulation of the metal plates.
  • Sintering is preferably performed at a temperature in the range of from 650 to 1400° C. in an atmosphere of air or inert gas, especially nitrogen.
  • thermoelectric material all thermoelectric materials may be employed according to the present invention.
  • Typical thermoelectric materials are e.g. disclosed in U.S. Pat. No. 5,448,109, WO 2007/104601, WO 2007/104603. Pb tellurides are preferred.
  • the materials are generally produced by reactive grinding or preferably by co-melting and reaction of mixtures of the particular elemental constituents or alloys thereof.
  • a reaction time for the reactive grinding or preferably co-melting of at least one hour has been found to be advantageous.
  • thermoelectric materials are prepared generally in an evacuated and sealed quartz tube. Mixing of the components involved can be ensured by use of a rotatable and/or tiltable oven. On completion of the reaction, the oven is cooled. Thereafter, the quartz tube is removed from the oven and the semiconductor material present in the form of blocks is cut into slices. These slices are then cut into pieces of length about 1 to 5 mm, from which thermoelectric modules can be manufactured.
  • tubes or ampules of other materials which are inert with respect to the semiconductor material for example of tantalum.
  • vessels it is also possible to use other vessels of a suitable shape. It is also possible to use other materials, for example graphite, as the vessel material, provided that they are inert with respect to the semiconductor material.
  • the materials can also be synthesized by melting/co-melting in an induction oven, for example in graphite ceramic or quartz crucibles.
  • thermoelectric generators or Peltier arrangements by methods which are known per se to the person skilled in the art and are described, for example, in WO 98/44562, U.S. Pat. No. 5,448,109, EP-A-1 102 334 or U.S. Pat. No. 5,439,528.
  • thermoelectric generators or Peltier arrangements By varying the chemical composition of the thermoelectric generators or Peltier arrangements, it is possible to provide different systems which satisfy different requirements in a multitude of possible applications.
  • the inventive thermoelectric generators or Peltier arrangements thus widen the range of application of these systems.
  • the present invention also relates to the use of an inventive thermoelectric module
  • the present invention further relates to a heat pump, to a cooler, to a refrigerator, to a (laundry) drier, to a generator for converting thermal energy to electrical energy or to a generator for utilizing heat sources, comprising at least one inventive thermoelectric module.
  • the powder materials were an yttria partially-stabilized zirconium oxide from MEL Chemicals, and aluminium oxide from Sumitomo Chemical Company. Suspensions of the materials in amyl alcohol were vibro-energy milled to a particle size distribution with a mean of 0.2 ⁇ m. EPD was carried out on cathodes consisting of 60 mm ⁇ 60 mm metallic foil substrates supported around the 4 edges so that the deposition area was 44 mm ⁇ 44 mm. The deposition potential was 30 V. To avoid problems of drying cracks due to shrinkage of the deposited film a 3-step process was used.
  • deposition was carried out for approximately 2 minutes and the coated substrate was then removed from the bath and allowed to dry. This process was repeated so that the total deposition time was approximately 6 minutes.
  • Coatings of good visual appearance were processed further by isostatic pressing followed by sintering to near theoretical density at various temperatures for 1 hour.
  • the coating thickness was determined from measurements of the deposit weight and area, assuming a theoretical density of 3.965 g/cm 3 for alumina and 5.89 g/cm 3 for zirconia.
  • the coating thickness was approximately 20 ⁇ m for zirconia and 30 ⁇ m for alumina as shown in tables 1 and 2.
  • the coated test piece was clamped between two stainless steel plates electrically isolated from each other.
  • the pressing force was 2 N/mm 2 in the pressed area.
  • a voltage of 15 V was laid on the two steel plates and the electrical current was measured.
  • the minimal detection limit of the current was 0.010 mA.
  • a composite glass-ceramic powder suspension suitable for EPD was produced by grinding the glass to a powder, mixing with the Sumitomo alumina powder and dispersing in alcohol.
  • the glass used in this composite was an aluminoborate glass with the composition 46% SiO 2 , 25% B 2 O 3 , 10% Al 2 O 3 , 4% Na 2 O, 3% CaO, 6% SrO and 6% BaO.
  • Trials were carried out to form a composite coating of 80% glass to 20% alumina by weight on Fecralloy foil by EPD with a deposition time of approximately 1 minute. The coating was uniform, adherent, free of texture and free of porosity or microcracks.
  • the thickness of the glass/alumina coating was 7 ⁇ m. Further EPD trials showed that it was possible to produce glass coatings up to 30 ⁇ m thickness on Fecralloy, but owing to the low thermal conductivity of glass a thin coating is preferred for the thermoelectric application.
  • Coatings containing other proportions of glass to alumina ranging from 100% glass to 100% alumina are possible by this method.
  • a high proportion of glass is not desirable for thermoelectric application.
  • a composition with a higher glass content is easier to process, which allows the possibility of fabricating a thinner coating without the risk of pinholes or short-circuiting.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Non-Adjustable Resistors (AREA)
  • Paints Or Removers (AREA)
  • Laminated Bodies (AREA)
US13/259,872 2009-04-02 2010-03-31 Thermoelectric module with insulated substrate Abandoned US20120017963A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09157158 2009-04-02
EP09157158.8 2009-04-02
PCT/EP2010/054268 WO2010115792A1 (en) 2009-04-02 2010-03-31 Thermoelectric module with insulated substrate

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US (1) US20120017963A1 (enrdf_load_stackoverflow)
EP (1) EP2415090B1 (enrdf_load_stackoverflow)
JP (1) JP2012523111A (enrdf_load_stackoverflow)
KR (1) KR20120007027A (enrdf_load_stackoverflow)
CN (1) CN102449791A (enrdf_load_stackoverflow)
CA (1) CA2757530A1 (enrdf_load_stackoverflow)
RU (1) RU2011144115A (enrdf_load_stackoverflow)
SG (1) SG174559A1 (enrdf_load_stackoverflow)
TW (1) TW201042788A (enrdf_load_stackoverflow)
WO (1) WO2010115792A1 (enrdf_load_stackoverflow)

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US9082928B2 (en) 2010-12-09 2015-07-14 Brian Isaac Ashkenazi Next generation thermoelectric device designs and methods of using same
US20190051808A1 (en) * 2016-02-22 2019-02-14 Tegma As Thermoelectric half-cell and method of production
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US20120001117A1 (en) * 2009-03-24 2012-01-05 Basf Se Self-Organising Thermoelectric Materials
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TW201042788A (en) 2010-12-01
CN102449791A (zh) 2012-05-09
KR20120007027A (ko) 2012-01-19
EP2415090A1 (en) 2012-02-08
SG174559A1 (en) 2011-10-28
WO2010115792A1 (en) 2010-10-14
EP2415090B1 (en) 2013-10-23
RU2011144115A (ru) 2013-05-10
CA2757530A1 (en) 2010-10-14
JP2012523111A (ja) 2012-09-27

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