US20110000612A1 - Processing for bonding two substrates - Google Patents

Processing for bonding two substrates Download PDF

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Publication number
US20110000612A1
US20110000612A1 US12/811,209 US81120909A US2011000612A1 US 20110000612 A1 US20110000612 A1 US 20110000612A1 US 81120909 A US81120909 A US 81120909A US 2011000612 A1 US2011000612 A1 US 2011000612A1
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United States
Prior art keywords
gas
flow
substrates
bonding
gaseous flow
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Abandoned
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US12/811,209
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English (en)
Inventor
Gweltaz Gaudin
Fabrice Lallement
Cyrille Colnat
Pascale Giard
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Soitec SA
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Soitec SA
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Assigned to S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES reassignment S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: GIARD, PASCALE, COLNAT, CYRILLE, LALLEMENT, FABRICE, GAUDIN, GWELTAZ
Publication of US20110000612A1 publication Critical patent/US20110000612A1/en
Assigned to SOITEC reassignment SOITEC CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor

Definitions

  • the invention relates to the technical field of bonding by molecular adhesion of two substrates to one another.
  • Bonding is one way to attach two substrates to each other, which finds application e.g. in the silicon-on-insulator fabrication technology called Smart CutTM. Bonding by molecular adhesion is a technique during which two substrates are brought in close contact to each other and wherein the surfaces properties of the substrates are such that they stick to one another, without the application of further adhesives. The process of bonding is specifically started by applying pressure locally to the two substrates which are placed in close contact, from where a bonding front then spreads out over the entire interface of the two substrates.
  • WO 2007/060145 discloses such a process for bonding by molecular adhesion.
  • the bonding method described therein comprises, prior to bonding, a step consisting of modifying the surface state of one and/or the other of the substrates to be able to regulate the propagation speed of the bonding front.
  • the surface state is modified by locally or uniformly heating the surface of one and/or the other of the substrates to be bonded.
  • the heating serves to dissolve water from the surface of the substrates before bonding, which allows minimizing of bonding defects.
  • Bonding defects are for example so called edge void defects which result from the presence of water at the interface. In the Smart CutTM process this kind of defect can lead to the presence of non-transferred zones in the final product, e.g. a SOI wafer.
  • the gaseous flow can be provided between the two substrates.
  • a flushing of the surfaces can be carried out just until the substrates come into contact.
  • the gaseous flow can be a laminar flow. It is believed that, by providing the gaseous flow, water which otherwise might saturate the atmosphere of a tool used for bonding, can be removed from the bonding surfaces. By providing the laminar flow, a possible re-entry of water due to turbulences can be prevented.
  • the flow can be essentially parallel to the bonding surfaces of the substrates.
  • the gaseous flow can be provided during a heat treatment of the two substrates. By doing so, the water removal effect and as a consequence the bonding is improved.
  • the gaseous flow can be heated such that the heat treatment is at least partially carried out using the heated gaseous flow.
  • an additional convective heating can be provided.
  • the heat treatment can be completely carried using the heated gaseous flow.
  • the equipment necessary to carry out the heat treatment and/or the bonding do not need additional heating devices.
  • the gaseous flow is stopped prior to the contacting of the two substrates.
  • the gaseous flow is provided as long as the two substrates are not yet in contact so that the advantageous effects are achieved just until the bonding. Once the substrates are bonded, the gaseous flow is no longer necessary and is stopped to carry out the process in an economical way.
  • the gas of the gaseous flow can have a thermal conductivity of better than 10*10 ⁇ 3 W/m.K.
  • the higher the thermal conductivity the easier the gas can be heated up and furthermore, the heat transferred to the substrates which further improves the overall process.
  • the gaseous flow can comprise nitrogen and/or an inert gas, in particular argon.
  • the gaseous flow is constituted to at least 10% of one or more of these elements.
  • the mixture of the gas e.g. H 2 /Ar, Cl 2 /Ar or F 2 /Ar, also hydrophobic surfaces can be bonded with reduced defects.
  • Hydrophobic Si surface should be terminated by Si-dangling bonds and/or Si—H (low polar bonds), but also in case of Ar/F2 (10%F2) gases, by a small portion of Si—F or ⁇ Si —F —H bonds. Those bonds, though very polar, allow a bonding without water by ⁇ Si —H —F . . . F—Si, ⁇ Si—F . . . H—Si or ⁇ Si —H —F . . . H—F . . . H—F . . . H—F . . . H—Si Bridging.
  • the gaseous flow treatment can be carried out over a time period starting from seconds up to several minutes.
  • a gaseous flow of just a couple of seconds is sufficient to achieve the desired results.
  • the process can be run in a fast and reliable manner.
  • the advantages of the process can also be achieved without an additional heat source by applying the process for a sufficient long time, typically of the order of minutes.
  • the gaseous flow can have a temperature in a range from room temperature, thus typically 19-24° C., up to 100° C. With a gaseous flow in this temperature range, best results have been achieved over time.
  • the gaseous flow can be provided in an oxidizing atmosphere, in particular Air or 20% O2 in N2,and/or a dry atmosphere with a low humidity rate.
  • the object of the invention is also achieved with the equipment for bonding two substrates to one another according to claim 14 .
  • the inventive equipment for bonding two substrates comprises the means to provide a gaseous flow, so that the same advantages as already described above for claim 1 can be achieved.
  • the means to provide a gaseous flow can comprise a ventilation system and/or an aspiration system and/or one or more gas inlets.
  • a ventilation system and/or an aspiration system and/or one or more gas inlets can comprise a ventilation system and/or an aspiration system and/or one or more gas inlets.
  • the means to provide a gaseous flow can be configured to provide a laminar gaseous flow.
  • turbulences are prevented which could eventually lead to a re-entry of unwanted water molecules in the region of the substrates bonding surfaces.
  • the means to provide a gaseous flow can be configured to provide the gaseous flow essentially parallel to the substrate surfaces. In this configuration, optimized results can be achieved.
  • the means to provide a gaseous flow further comprise a means to heat the gaseous flow, particularly to temperatures up to 100° C. By doing so, even more water can be removed from the bonding surfaces.
  • FIGS. 1A-1C illustrate the process step of a first embodiment according to the invention
  • FIG. 2 is a 3D schematic view illustrating the concept of the invention.
  • FIG. 3 illustrates a bonding equipment according to the invention.
  • FIGS. 1A-1C illustrate three embodiments of the inventive process for bonding two substrates.
  • the first step illustrated in FIG. 1A consists in providing two substrates 1 and 3 within a bonding chamber 5 .
  • substrates 1 and 3 are semiconductor wafers, in particular silicon wafers with or without additional layers provided thereon. They have either a semiconductor or insulating surface, like native oxide.
  • the two substrates 1 and 3 have been treated to have the necessary surface properties to be able to carry out bonding prior to entering the bonding chamber 5 .
  • the two substrates 1 and 3 face each other with their respective bonding surfaces 7 and 9 . They are held at a certain distance in parallel to each other.
  • the bonding chamber 5 comprises a means (not shown) to move the two substrates 1 and 3 with respect to each other, so that they can be brought into contact with each other.
  • FIG. 1B The next step of the inventive method is illustrated in FIG. 1B .
  • Part I of FIG. 1B illustrates a first embodiment, Part II of FIG. 1B , a second embodiment and FIG. III of FIG. 1B a third embodiment.
  • the substrates are heated, e.g. using a lamp 11 or any other suitable heating means, like for example, providing inside the substrate holder (not shown).
  • a gaseous flow 13 is provided between the two substrates 1 , 3 and sweeps over the respective surfaces 7 and 9 .
  • FIG. 2 illustrates this situation schematically in a three dimensional way.
  • FIG. 2 shows the two substrates 1 and 3 facing each other with the bonding surfaces 7 and 9 . In between, the gaseous flow 13 is provided such that a non-confined atmosphere is created between the two substrates.
  • the provision of a non-confined atmosphere has the advantage that desorbed water from the surfaces 7 and 9 is trapped by the gaseous flow 13 and transported away from the substrates. This prevents a saturation of the atmosphere inside the bonding chamber 5 due to accumulation of water molecules from wafer to wafer. Therefore, the bonding quality can be kept constant as, from wafer to wafer, the necessary removal of water molecules from the surfaces 7 and 9 can be achieved.
  • the gaseous flow is provided for a couple of seconds to achieve the desired effect.
  • the gaseous flow is a laminar flow which prevents turbulences which could re-introduce water which has already been transported away.
  • the flow is provided parallel to surfaces 7 and 9 of substrates 1 and 3 like illustrated in FIG. 2 .
  • the gaseous flow according to the embodiment consists of argon, nitrogen and/or any other inert gas or mixture thereof.
  • the temperature of the gaseous flow is about room temperature, which is typically in a range of 19° C.-24° C.
  • a H 2 /Ar, Cl 2 /Ar or F 2 /Ar mixture in a pressure and temperature controlled chamber can be used.
  • Part II of FIG. 1B illustrates a second embodiment of the invention. Elements with the same reference numeral as in Part I are not described in detail again, their description is incorporated herewith by reference.
  • the bonding chamber 5 does not comprise a heating means 11 anymore.
  • the gaseous flow 13 still at room temperature, is applied for a longer time, in particular for several minutes, to be able to eliminate about the same water quantity from the surfaces 7 and 9 of the wafers 1 and 3 as in the first embodiment.
  • a simplified bonding chamber 5 not needing an additional heating device, can be used.
  • FIG. 1B Part III of FIG. 1B illustrates a third embodiment of the inventive method. Again, features having the same reference numerals a previously used are not explained in detail but their description is enclosed herewith by reference.
  • the difference of the third embodiment compared to the second embodiment is that, instead of using a gaseous flow 13 at room temperature, the gaseous flow 13 ′ in this embodiment has a temperature higher than room temperature, in particular of up to 100° C. By doing so, it is again possible to remove the water from the surfaces 7 and 9 of substrates 1 and 3 while applying the gaseous flow 13 ′ for a shorter time compared to the second embodiment and, at the same time, no additional heating device like in the first embodiment is needed.
  • the gaseous flow shall consist (at least to a percentage of 10%) of an inert gas or mixture thereof having a high thermal conductivity, such that the necessary heat transfer from the gas to the substrates 1 , 3 can be optimized.
  • the features of the gaseous flow 13 ′ correspond to the one of gaseous flow 13 , in particular the gaseous flow shall be a laminar flow parallel to the surfaces 7 and 9 .
  • embodiments 1 - 3 can be freely combined, for example, a gaseous flow 13 ′ with a temperature higher than room temperature can be used in combination with a further heating means 11 , such that part of the heat treatment prior to bonding is provided by the gaseous flow and the remaining part by the heating means 11 .
  • FIG. 1C illustrates the third step of the inventive method which consists in bringing the two substrates 1 and 3 into close contact with each other to thereby start bonding. Bonding is typically initiated by local application of a light pressure followed by a bonding front which spreads out over the entire interface.
  • the gaseous flow between the substrates 1 , 3 can be stopped.
  • the inventive method has the advantage that, it allows the removal of water absorbed on the surfaces of the substrates to be bonded in a reliable and repeatable manner compared to the prior art. Due to the reduced amount of water in the bonding interface, fewer bonding defects occur which in turn render the bonded substrate better in quality.
  • the inventive process is of particular interest in the so called Smart CutTM type process used to e.g. form silicon-on-insulator substrates for the electronics industry and which consists in transferring a layer from a donor substrate onto a handle substrate, wherein attachment between the donor substrate and the handle substrate is achieved by bonding.
  • the gaseous flow 13 , 13 ′ was provided inside the bonding chamber 5 between the two substrates 1 and 3 facing each other.
  • the flushing of the bonding surfaces 7 , 9 with the gaseous flow could also be carried out outside the bonding chamber 5 just before entering the substrates 1 and 3 into the chamber 5 .
  • a non-confined atmosphere could also be achieved by moving the two substrates through an inert gas.
  • FIG. 3 illustrates one embodiment of an inventive equipment for bonding two substrates.
  • the bonding equipment 21 illustrated can serve as bonding chamber 5 like described above with respect to embodiments 1-3.
  • the bonding equipment 21 comprises a chamber 23 . Inside the chamber, a substrate holder 25 is provided to hold the substrates 1 and 3 such that the bonding surfaces 7 and 9 face each other.
  • the bonding equipment 21 comprises a means 25 a and 25 b to provide a gaseous flow between the two substrates 1 and 3 .
  • the means to provide a gaseous flow comprises a ventilation system 25 a which provides the gaseous flow 13 which is then aspirated by an aspiration system 25 b to remove the flow comprising water molecules desorbed from the surfaces of substrates 1 and 3 .
  • one or more gas inlets could also be provided which are in connection with a corresponding gas supply.
  • the means to provide the gaseous flow is preferably arranged and configured such that the gaseous flow 13 is a laminar flow, the advantages of which are described above.
  • the means to provide the gaseous flow are preferably configured such that the flow 13 is parallel to the substrate surfaces.
  • the ventilation system 25 a could also be designed to have two or more gaseous flows coming from several directions.
  • the bonding equipment can furthermore comprise heating means 27 , e.g. a lamp which could be located upon the center or the edge of the wafer to heat locally or totally the surfaces of the wafer to be bonded.
  • heating means 27 e.g. a lamp which could be located upon the center or the edge of the wafer to heat locally or totally the surfaces of the wafer to be bonded.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
US12/811,209 2008-02-15 2009-01-23 Processing for bonding two substrates Abandoned US20110000612A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08290150.5 2008-02-15
EP08290150A EP2091071B1 (en) 2008-02-15 2008-02-15 Process for bonding two substrates
PCT/IB2009/000142 WO2009101495A1 (en) 2008-02-15 2009-01-23 Processing for bonding two substrates

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PCT/IB2009/000142 A-371-Of-International WO2009101495A1 (en) 2008-02-15 2009-01-23 Processing for bonding two substrates

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US13/749,471 Continuation US8999090B2 (en) 2008-02-15 2013-01-24 Process for bonding two substrates

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US20110000612A1 true US20110000612A1 (en) 2011-01-06

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US13/749,471 Active US8999090B2 (en) 2008-02-15 2013-01-24 Process for bonding two substrates

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US (2) US20110000612A1 (enrdf_load_stackoverflow)
EP (1) EP2091071B1 (enrdf_load_stackoverflow)
JP (1) JP2011514669A (enrdf_load_stackoverflow)
KR (1) KR20100119780A (enrdf_load_stackoverflow)
CN (1) CN101925978A (enrdf_load_stackoverflow)
WO (1) WO2009101495A1 (enrdf_load_stackoverflow)

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US20120329241A1 (en) * 2011-06-27 2012-12-27 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor manufacturing method

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FR2963157B1 (fr) * 2010-07-22 2013-04-26 Soitec Silicon On Insulator Procede et appareil de collage par adhesion moleculaire de deux plaques
FR2963982B1 (fr) * 2010-08-20 2012-09-28 Soitec Silicon On Insulator Procede de collage a basse temperature
JP2014188536A (ja) * 2013-03-26 2014-10-06 National Institute For Materials Science 金属材の拡散接合方法および金属材の拡散接合装置
US9922851B2 (en) 2014-05-05 2018-03-20 International Business Machines Corporation Gas-controlled bonding platform for edge defect reduction during wafer bonding
CN105197880B (zh) * 2014-06-24 2018-03-20 中芯国际集成电路制造(上海)有限公司 一种带空腔晶片的键合方法
FR3029352B1 (fr) 2014-11-27 2017-01-06 Soitec Silicon On Insulator Procede d'assemblage de deux substrats
CN107533996B (zh) 2015-04-10 2021-02-23 Ev 集团 E·索尔纳有限责任公司 衬底固持器和用于接合两个衬底的方法
US11056356B1 (en) * 2017-09-01 2021-07-06 Intel Corporation Fluid viscosity control during wafer bonding
CN109887860B (zh) * 2018-12-28 2020-12-25 上海集成电路研发中心有限公司 一种键合腔体结构及键合方法
KR102808554B1 (ko) 2019-11-07 2025-05-16 삼성전자주식회사 기판 본딩 장치
KR102783983B1 (ko) * 2020-03-06 2025-03-21 가부시키가이샤 니콘 제어 장치, 제어 방법 및 프로그램
JP7014850B2 (ja) * 2020-04-28 2022-02-01 エーファウ・グループ・エー・タルナー・ゲーエムベーハー ２つの基板をボンディングするための基板ホルダおよび方法
CN113707564B (zh) * 2021-08-31 2024-06-21 浙江同芯祺科技有限公司 一种超薄半导体基板加工工艺
US12001193B2 (en) * 2022-03-11 2024-06-04 Applied Materials, Inc. Apparatus for environmental control of dies and substrates for hybrid bonding
CN118560040B (zh) * 2024-07-31 2024-12-03 浙江方氏眼镜制造有限公司 一种塑料眼镜架板材贴合加工设备及贴合加工方法

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US20120329241A1 (en) * 2011-06-27 2012-12-27 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor manufacturing method
US8822307B2 (en) * 2011-06-27 2014-09-02 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor manufacturing method

Also Published As

Publication number Publication date
US20130139946A1 (en) 2013-06-06
EP2091071B1 (en) 2012-12-12
JP2011514669A (ja) 2011-05-06
WO2009101495A1 (en) 2009-08-20
KR20100119780A (ko) 2010-11-10
EP2091071A1 (en) 2009-08-19
US8999090B2 (en) 2015-04-07
CN101925978A (zh) 2010-12-22

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