US20100314400A1 - Vitreous silica crucible - Google Patents

Vitreous silica crucible Download PDF

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Publication number
US20100314400A1
US20100314400A1 US12/866,203 US86620309A US2010314400A1 US 20100314400 A1 US20100314400 A1 US 20100314400A1 US 86620309 A US86620309 A US 86620309A US 2010314400 A1 US2010314400 A1 US 2010314400A1
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United States
Prior art keywords
section
crucible
straight body
body section
corner
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Abandoned
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US12/866,203
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English (en)
Inventor
Minoru Kanda
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Japan Super Quartz Corp
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Japan Super Quartz Corp
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Assigned to JAPAN SUPER QUARTZ CORPORATION reassignment JAPAN SUPER QUARTZ CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KANDA, MINORU
Publication of US20100314400A1 publication Critical patent/US20100314400A1/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt

Definitions

  • the present invention relates to a vitreous silica crucible for pulling silicon single crystals. More specifically, the present invention relates to a vitreous silica crucible which can restrain the occurrence of inward collapse deformation at high temperature during pulling even when the crucible has a large opening diameter.
  • Silicon single crystals used as semiconductor material are primarily manufactured by pulling silicon melt contained in a vitreous silica crucible.
  • vitreous silica crucible used for the pulling of silicon single crystals which has an inner layer made of synthetic fused silica.
  • the inner layer is placed for the purpose of improving single crystal quality because the inner layer contacts silicon melt.
  • a vitreous silica crucible which has an inner layer made of synthetic fused silica and an outer layer made of natural fused silica.
  • vitreous silica crucible which includes aluminum oxide or silicon nitride between an outer layer made of natural fused silica and an inner layer made of synthetic fused silica. This structure is employed to form a crystallized layer which functions as a crystallization promoter at high temperature (Patent Document 4).
  • vitreous silica crucible which includes inner and outer layers made of natural fused silica and an inner lining made of synthetic fused silica on the part ranging from the crucible bottom section to the corner section in order to restrain melt surface vibration during pulling (Patent Document 5).
  • vitreous silica crucible which has a straight body section tapered so that the section is outwardly-widened upwardly.
  • the straight body section is thus configured to uniformize oxygen concentration in single crystal silicon (Patent Document 6).
  • a vitreous silica crucible which has an inner layer made of synthetic fused silica and a carbon outer layer. The carbon outer layer is provided to enhance crucible strength at high temperature to prevent inward collapse and buckling (Patent Document 7).
  • Patent Document 1 Japanese Patent Application Laid-Open No. Hei 1 (1989)-261293
  • Patent Document 2 Japanese Patent Application Laid-Open No. Hei 1 (1989)-275496
  • Patent Document 3 Japanese Patent Application Laid-Open No. Hei 03 (1991)-40989
  • Patent Document 4 Japanese Patent Application Laid-Open No. Hei 04(1992)-21587
  • Patent Document 5 International Publication W02004/097080
  • Patent Document 6 Japanese Patent Application Laid-Open No. Sho 57 (1982)-38398
  • Patent Document 7 Japanese Patent Application Laid-Open No. 2007-076974
  • the crucible having an inner layer made of synthetic fused silica can reduce impurities mixed in single crystal silicon and improve single crystallization rate and the crystal quality of single crystals.
  • the straight body section of the crucible is likely to experience inward collapse deformation during pulling because synthetic fused silica has slightly lower high-temperature viscosity than natural fused silica. This leads to interruption of the pulling and a drop in the crystallization rate.
  • Patent Document 1 to 3 This is true of a crucible having an inner lining made of synthetic fused silica on the part ranging from the crucible bottom section to the corner section (Patent Document 5)
  • a vitreous silica crucible tapered so as to be outwardly-widened upwardly can prevent inward collapse because the upper end of the crucible mounted in a susceptor tends to decline toward the outer susceptor (Patent Document 6).
  • Patent Document 6 a vitreous silica crucible tapered so as to be outwardly-widened upwardly
  • the corner section of the crucible can gradually lower down to the susceptor in case there exists a gap between the corner section of the crucible and the susceptor.
  • the deformation caused by the lowering changes the direction of the straight body section so that the straight body section becomes in a vertical direction or slightly inwardly-tilted, which can result in inward collapse.
  • the deformation during pulling can cause dislocations and ununiformity.
  • a crucible having an outwardly-widened upper end section and a carbon outer layer requires complex manufacturing process because of the two-tier structure, and the processing and handling is burdensome. Especially, it is very difficult to maintain the purity level of the vitreous silica inner layer by restraining the mix-in of carbon particles from the outer surface carbon layer to the inner surface vitreous silica layer (Patent Document 7).
  • the present invention provides a vitreous silica crucible comprising:
  • the crucible comprises a straight body section, a corner section, and a bottom section, and the straight body section is outwardly-widened upwardly, the inner layer on the corner section has a layer thickness which is 20% to 80% of the wall thickness of a central portion of the corner section, and the inner layer on the straight body section and the bottom section is thinner than that on the corner section.
  • the straight body section is outwardly-widened upwardly, inward collapse at high temperature does not occur.
  • the corner section of the crucible mounted on a susceptor can be in close contact with the susceptor. Furthermore, because the inner layer has a maximum layer thickness which is 80% or less of the maximum wall thickness of the corner section and the inner layer on the straight body section and the bottom section is thinner than that on the corner section, the corner section maintain sufficient strength at high temperature and the straight body section and the bottom section have sufficient strength, and therefore, deformation due to the lowering etc. does not occur. Therefore, single crystal can be pulled efficiently even when a large-size crucible is used.
  • the difference in inner diameter of the lower and upper ends of the straight body section which is outwardly-widened upwardly is preferably 0.1% or more.
  • the difference in inner diameter of the lower and upper ends of the outwardly-widened section is 0.1% or more, inward collapse of the crucible is surely prevented because the upper end section of the crucible is provided with a large outwardly-directed force.
  • the range from the upper end of the straight body section to the corner section may be outwardly-widened upwardly.
  • the range within 50 mm from the upper end of the straight body section may be a vertical section, and the range from the lower end of the vertical section to the corner section may be outwardly-widened upwardly.
  • the difference in inner diameter of the lower and upper ends of the outwardly-widened section is preferably 0.1% or more.
  • the straight body section is viewed as a whole, the straight body section is outwardly-widened upwardly. Therefore, the upper end section of the crucible receives a large outwardly-directed force, and thus the inward collapse of the crucible is surely prevented.
  • the wall thickness of the straight body section is preferably thinned toward the upper end section.
  • the wall thickness of the straight body section is thinned toward the upper end section, the upper end section of the straight body section becomes lighter than the lower section, and the possibility of inward collapse is further reduced.
  • a vitreous silica crucible which can restrain deformation caused by inward collapse, lowering, etc. at high temperature during pulling even when the crucible has a large opening diameter.
  • FIG. 1 is a schematic sectional view illustrating a structure of a vitreous silica crucible according to a first embodiment of the present invention.
  • FIG. 2 is a schematic sectional view illustrating a structure of a vitreous silica crucible according to a second embodiment of the present invention.
  • FIG. 1 is a schematic sectional view illustrating a structure of a vitreous silica crucible according to a first embodiment of the present invention.
  • a vitreous silica crucible 10 is for pulling of silicon single crystal.
  • the vitreous silica crucible 10 has an outer layer 20 made of natural fused silica and an inner layer 21 made of synthetic fused silica.
  • Natural fused silica means vitreous silica manufactured by melting natural material such as natural quartz crystal, silica stone, and so on.
  • natural quartz contains metal impurities at higher concentration and OH groups at lower concentration than synthetic silica.
  • natural quartz contains an Al content of 1 ppm or more, each alkali metal (Na, K and Li) content of 0.05 ppm or more, and an OH group content of less than 60 ppm.
  • synthetic fused silica means vitreous silica manufactured by melting synthetic material produced, for example, by hydrolysis of silicon alkoxide.
  • synthetic silica contains metal impurities at lower concentration and OH groups at higher concentration than natural quartz.
  • synthetic silica contains each metal impurities (Al, Na, K, Li, etc.) content of less than 0.05 ppm, and an OH group content of 30 ppm or more.
  • metal impurities Al, Na, K, Li, etc.
  • a vitreous silica crucible 10 includes a straight body section 11 forming an upstanding sidewall section, a corner section 12 which is curved and continues from the lower end of the straight body section 11 , and a bottom section 13 which is relatively flat and continues from the corner section 12 .
  • the straight body section 11 is outwardly-widened upwardly, and thus the crucible 10 has a bowl shape.
  • the boundary between the straight body section 11 and the corner section 12 is a point where the tangential tilt angle of the crucible wall, which is constant on the straight body section 11 , starts to change.
  • the boundary between the corner section 12 and the bottom section 13 varies dependent on whether the bottom section is a round bottom or a flat bottom.
  • the boundary does not need to be clearly defined. But, as an example, the region where the tangential tilt angle of the wall surface with respect to the XY plane orthogonally crossing the central axis (Z axis) of the crucible is 10 degrees or more is defined as the corner section 12 , and the region where the tangential tilt angle is less than 10 degrees is defined as the bottom section 13 .
  • the vitreous silica crucible 10 has an outer section (outer layer) 20 which extends from the straight body section 11 to the corner section 12 and the bottom section 13 , i.e. extends over the entire crucible 10 .
  • the outer section (outer layer) 20 is made of natural fused silica. Therefore, the crucible 10 has larger strength at high temperature and is hard to deform than a crucible totally made of synthetic fused silica.
  • the vitreous silica crucible 10 has an inner section (inner layer) 21 which extends from the straight body section 11 to the corner section 12 and the bottom section 13 , i.e. extends over the entire crucible 10 .
  • the inner section (inner layer) 21 is made of synthetic fused silica. Because the inner layer 21 which contacts silicon melt is made of a highly-pure synthetic fused silica layer, pulled silicon single crystal contains extremely low impurity concentration.
  • the inner layer 21 made of synthetic fused silica on the straight body section 11 and the bottom section 13 (thus not on the corner section 12 ) has a layer thickness of about 5% to 50% of the wall thickness of the straight body section 11 and the bottom section 13 , respectively.
  • the inner layer 21 made of synthetic fused silica on the corner section 12 has a maximum layer thickness t 1 which is 20% to 80% of the maximum wall thickness t 0 in the same location.
  • the maximum thickness t 1 of the inner layer 21 on the corner section 12 is larger than the layer thicknesses t 2 , t 3 of the inner layer 21 on the straight body section 11 and the bottom section 13 , respectively.
  • the inner layer 21 on the straight body section 11 and the bottom section 13 is thinner than the inner layer 21 on the corner section 12 .
  • the maximum layer thickness t 1 on the corner section 12 is 20% or more of the wall thickness t 0 of the corner section 12 , and is larger than the maximum layer thicknesses t 2 , t 3 of the inner layer 21 made of synthetic fused silica on the straight body section 11 and the bottom section 13 , respectively. Therefore, when the crucible is mounted in a susceptor and used for pulling, the corner section 12 of the crucible is, at high temperature during pulling, softened slightly more easily than the straight body section 11 . Therefore, when melting silicon before pulling, the corner section 12 becomes in close contact with the susceptor, and the crucible is stably supported in the susceptor. Furthermore, because the straight body section 11 is outwardly-widened and is provided with a outward force, inward collapse of the straight body section 11 does not occur.
  • the corner section 12 of the crucible When the layer thickness of the inner layer 21 on the corner section 12 is less than 20%, the corner section 12 of the crucible is, at high temperature when melting silicon, not easily softened, the corner section 12 does not become in close contact with the susceptor, and thus a gap between the corner section 12 and the susceptor remains. When pulling is continued, the gap can cause the deformation of the entire crucible. Therefore, such layer thickness is not preferred.
  • the deformation of the entire crucible changes the direction of the straight body section, which is initially outwardly-widened, so that the straight body section becomes in a vertical direction or slightly inwardly-tilted, which can finally result in inward collapse.
  • the maximum layer thickness t 1 of the inner layer 21 on the corner section 12 is 80% or less of the wall thickness t 0 of the corner section 12 .
  • the layer thickness of the inner layer made of synthetic fused silica is larger than 80%, the corner section is easy to be softened and thus vulnerable to the lowering. Therefore, such layer thickness is not preferable.
  • the inner layer 21 made of synthetic fused silica on the straight body section 11 and the bottom section 13 has a thinner thickness than the inner layer 21 made of synthetic fused silica on the corner section 12 , the straight body section 11 and the bottom section 13 are hard to be softened and therefore the deformation is hard to occur.
  • the straight body section 11 is outwardly-widened upwardly. Therefore, the straight body section 11 receives an outward force, and therefore the inward collapse can be prevented even when the crucible is slightly softened at high temperature during pulling.
  • the range from the upper end 11 a of the straight body section 11 to the corner section 12 is outwardly-widened upwardly. It is preferred that the difference in inner diameter between the lower end 11 b and the upper end 11 a of the straight body section 11 is 0.1% or more, that is, the inner diameter of the upper end 11 a is 1.001r1 or more of the inner diameter of the lower end 11 b.
  • the difference in inner diameter of the straight body section 11 is less than 0.1%, the outward tilt is small and therefore inward collapse can occur depending on the softened state of the straight body section 11 .
  • the outer diameter may be formed so as to be outwardly-widened in accordance with the tilt of the outwardly-widened shape of the inner diameter. It should be noted that when the difference in inner diameter between the lower end 11 b and the upper end 11 a of the straight body section 11 is 0.1% or more, the outer diameter of the straight body section 11 may be constant from the lower end to the upper end.
  • the wall thickness containing the inner layer 21 and the outer layer 20 of the straight body section 11 of the crucible is preferably thinned toward the upper end section 11 a. With this shape, the upper end section of the straight body section of the crucible becomes lighter than the lower section, and the possibility of inward collapse is further reduced.
  • the vitreous silica crucible 10 becomes in close contact with an outer carbon susceptor when melting silicon contained in the crucible for pulling of silicon single crystals, and therefore the deformation of the crucible can be restrained from the beginning of the pulling. Because the deformation does not occur during the pulling, the dislocation occurrence rate is low and the ununiformity of the crystal quality decreases. Furthermore, even when the shape of the carbon susceptor is slightly changed due to the consumption thereof during the pulling, the change is absorbed by the softening of the corner section and therefore the crucible becomes in close contact with the susceptor, and the single crystallization rate is enhanced.
  • FIG. 2 is a schematic sectional view illustrating a structure of a vitreous silica crucible according to a second embodiment of the present invention.
  • the range within 50 mm from the upper end 11 a of the straight body section 11 is not outwardly-widened, but vertical, and the range from the lower end 11 c of the vertical section to the corner section 12 is outwardly-widened upwardly.
  • the vertical section is in a range of 50 mm or less from the upper end 11 a of the straight body section 11 , the upper end section of the straight body section 11 is unlikely to collapse inwardly even when the opening diameter (inner diameter) of the vertical section is constant. Therefore, the range other than the range of 50 mm or less from the upper end 11 a of the straight body section 11 may be outwardly-widened.
  • the difference in inner diameter between the lower end 11 b and the upper end 11 a ( 11 c ) is 0.1% or more, that is, the inner diameter of the upper end 11 a ( 11 c ) is larger, by 0.1% or more, than the inner diameter of the lower end 11 b.
  • the difference in inner diameter of the straight body section 11 is less than 0.1%, the outward tilt is small and therefore inward collapse can occur depending on the softened state of the straight body section 11 .
  • Other configurations are substantially the same as those in a vitreous silica crucible according to the first embodiment, corresponding components are given corresponding reference symbols, and the detailed explanation is not repeated.
  • the vitreous silica crucible 30 becomes in close contact with an outer carbon susceptor when melting silicon contained in the crucible for pulling of silicon single crystals, and therefore the deformation of the crucible can be restrained from the beginning of the pulling. Because the deformation does not occur during the pulling, the dislocation occurrence rate is low and the ununiformity of the crystal quality decreases. Furthermore, even when the shape of the carbon susceptor is slightly changed due to the consumption thereof during the pulling, the change is absorbed by the softening of the corner section and therefore the crucible becomes in close contact with the susceptor, and the single crystallization rate is enhanced.
  • Natural quartz powder was deposited on the inner surface of a rotating carbon mold, and then synthetic silica powder was deposited thereon, followed by arc melting to produce a vitreous silica crucible.
  • the inner surface of the carbon mold was outwardly-widened upwardly.
  • the natural quartz powder and the synthetic silica powder were deposited so that the upper and lower end sections of the straight body section and the corner section had a wall thickness as listed in Table 1 and the inner layer of the synthetic fused silica layer had a layer thickness as listed in Table 1 to manufacture vitreous silica crucible samples No. 1 to No. 6 with an opening diameter of about 24 inches.
  • each vitreous silica crucible had a height of 50 cm, and a height from the lower end to the upper end of the straight body section (the upper end of the crucible) of 35 cm.
  • silicon single crystals were pulled using these crucible samples No. 1 to No. 6. The result is shown in Table 1.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Devices For Use In Laboratory Experiments (AREA)
US12/866,203 2008-02-05 2009-02-04 Vitreous silica crucible Abandoned US20100314400A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008-025057 2008-02-05
JP2008025057 2008-02-05
PCT/JP2009/051845 WO2009099084A1 (ja) 2008-02-05 2009-02-04 石英ガラスルツボ

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US (1) US20100314400A1 (zh)
EP (1) EP2248776A4 (zh)
JP (1) JP5252157B2 (zh)
KR (1) KR20100128288A (zh)
CN (1) CN101970362A (zh)
TW (1) TWI396780B (zh)
WO (1) WO2009099084A1 (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120137963A1 (en) * 2010-12-01 2012-06-07 Japan Super Quartz Corporation Vitreous silica crucible
US20140261155A1 (en) * 2013-03-15 2014-09-18 Memc Electronic Materials, Inc. Crucible for controlling oxygen and related methods
USD771167S1 (en) * 2013-08-21 2016-11-08 A.L.M.T. Corp. Crucible
US9863061B2 (en) 2013-12-28 2018-01-09 Sumco Corporation Vitreous silica crucible and method for manufacturing the same
US9863062B2 (en) 2013-03-14 2018-01-09 Corner Star Limited Czochralski crucible for controlling oxygen and related methods
US10124923B1 (en) * 2015-11-19 2018-11-13 Creative Edge Design Group Ltd. Flexible product package with push-up

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5289294B2 (ja) * 2009-12-14 2013-09-11 株式会社Ｓｕｍｃｏ シリコン単結晶引上げ用石英ルツボ
JP5289293B2 (ja) * 2009-12-14 2013-09-11 株式会社Ｓｕｍｃｏ 単結晶引上げ用石英ルツボ
JP5762945B2 (ja) * 2011-12-30 2015-08-12 株式会社Sumco シリカガラスルツボ
CN102586856B (zh) * 2012-02-01 2015-03-11 江西赛维Ldk太阳能高科技有限公司 一种提高硅锭利用率和籽晶使用次数的坩埚及其制备方法
JP6351534B2 (ja) * 2015-04-01 2018-07-04 クアーズテック株式会社 シリコン単結晶引き上げ用石英ガラスルツボ
AT14854U1 (de) * 2015-07-03 2016-07-15 Plansee Se Behälter aus Refraktärmetall
JP7150250B2 (ja) * 2018-08-07 2022-10-11 株式会社Sumco 石英ガラスルツボおよび石英ガラスルツボの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020192409A1 (en) * 2000-05-31 2002-12-19 Yasuo Ohama Multilayer structured quartz glass crucible and method for producing the same
US20030074920A1 (en) * 2000-05-31 2003-04-24 Yasuo Ohama Method for producing quartz glass crucible

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB816334A (en) * 1954-12-24 1959-07-08 Telefunken Gmbh Improvements in or relating to crucibles
JPS5738398A (en) * 1980-08-12 1982-03-03 Toshiba Ceramics Co Ltd Quartz glass crucible for pulling up silicon single crystal
JPS6126593A (ja) * 1984-07-13 1986-02-05 Toshiba Ceramics Co Ltd シリコン単結晶引上用カ−ボンルツボ
JPH01261293A (ja) * 1988-04-12 1989-10-18 Mitsubishi Metal Corp シリコン単結晶引上げ用石英ルツボ
JP2864058B2 (ja) * 1991-05-27 1999-03-03 三菱マテリアルクォーツ株式会社 シリコン単結晶引上げ用石英ルツボ
WO2002014587A1 (fr) * 2000-08-15 2002-02-21 Shin-Etsu Handotai Co., Ltd. Creuset en quartz et procede de fabrication d'un monocristal
JP4166241B2 (ja) 2003-05-01 2008-10-15 信越石英株式会社 シリコン単結晶引上げ用石英ガラスルツボ及びその製造方法
DE602004029057D1 (de) * 2003-05-30 2010-10-21 Heraeus Quarzglas Quarzglastiegel zum ziehen von siliciumeinkristall
JP2007076974A (ja) 2005-09-15 2007-03-29 Toshiba Ceramics Co Ltd シリコン単結晶引上用ルツボ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020192409A1 (en) * 2000-05-31 2002-12-19 Yasuo Ohama Multilayer structured quartz glass crucible and method for producing the same
US20030074920A1 (en) * 2000-05-31 2003-04-24 Yasuo Ohama Method for producing quartz glass crucible

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120137963A1 (en) * 2010-12-01 2012-06-07 Japan Super Quartz Corporation Vitreous silica crucible
US9347148B2 (en) * 2010-12-01 2016-05-24 Sumco Corporation Vitreous silica crucible with specific ratio of transparent layer and bubble-containing layer thicknesses
US9863062B2 (en) 2013-03-14 2018-01-09 Corner Star Limited Czochralski crucible for controlling oxygen and related methods
US20140261155A1 (en) * 2013-03-15 2014-09-18 Memc Electronic Materials, Inc. Crucible for controlling oxygen and related methods
USD771167S1 (en) * 2013-08-21 2016-11-08 A.L.M.T. Corp. Crucible
USD839444S1 (en) * 2013-08-21 2019-01-29 A.L.M.T. Corp. Crucible
USD872872S1 (en) 2013-08-21 2020-01-14 A.L.M.T. Corp. Crucible
US9863061B2 (en) 2013-12-28 2018-01-09 Sumco Corporation Vitreous silica crucible and method for manufacturing the same
US10124923B1 (en) * 2015-11-19 2018-11-13 Creative Edge Design Group Ltd. Flexible product package with push-up

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EP2248776A4 (en) 2013-10-30
EP2248776A1 (en) 2010-11-10
CN101970362A (zh) 2011-02-09
JPWO2009099084A1 (ja) 2011-05-26
TW200940753A (en) 2009-10-01
JP5252157B2 (ja) 2013-07-31
WO2009099084A1 (ja) 2009-08-13
KR20100128288A (ko) 2010-12-07
TWI396780B (zh) 2013-05-21

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