JP5252157B2 - 石英ガラスルツボ - Google Patents
石英ガラスルツボ Download PDFInfo
- Publication number
- JP5252157B2 JP5252157B2 JP2009552483A JP2009552483A JP5252157B2 JP 5252157 B2 JP5252157 B2 JP 5252157B2 JP 2009552483 A JP2009552483 A JP 2009552483A JP 2009552483 A JP2009552483 A JP 2009552483A JP 5252157 B2 JP5252157 B2 JP 5252157B2
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- crucible
- straight body
- surface layer
- corner portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 97
- 239000002344 surface layer Substances 0.000 claims description 45
- 239000010410 layer Substances 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 16
- 239000010453 quartz Substances 0.000 description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011044 quartzite Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 silicon alkoxide Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Melting And Manufacturing (AREA)
- Devices For Use In Laboratory Experiments (AREA)
Description
Claims (4)
- シリコン単結晶の引き上げに用いられる石英ガラスルツボであって、天然石英ガラスによって形成された外面層と、合成石英ガラスによって形成された内面層とを備え、直胴部が上方に向かって外側に開いた形状を有し、コーナ部の前記内面層の最大層厚が当該位置における前記コーナ部の肉厚の20%以上〜80%以下であり、前記直胴部および底部の前記内面層が前記コーナ部の前記内面層の最大層厚より薄く形成されており、前記直胴部の下端と上端の内径差が0.1%以上であることを特徴とする石英ガラスルツボ。
- 前記直胴部の上端から前記コーナ部に至る範囲が上方に向かって外側に開いた形状である請求項1に記載する石英ガラスルツボ。
- 前記直胴部の上端から50mm以内の範囲が垂直部分であり、前記垂直部分の下端からコーナ部に至る範囲が上方に向かって外側に開いた形状である請求項1に記載する石英ガラスルツボ。
- 前記直胴部の肉厚が上端部に向かって薄く形成されている請求項1に記載する石英ガラスルツボ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009552483A JP5252157B2 (ja) | 2008-02-05 | 2009-02-04 | 石英ガラスルツボ |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008025057 | 2008-02-05 | ||
JP2008025057 | 2008-02-05 | ||
JP2009552483A JP5252157B2 (ja) | 2008-02-05 | 2009-02-04 | 石英ガラスルツボ |
PCT/JP2009/051845 WO2009099084A1 (ja) | 2008-02-05 | 2009-02-04 | 石英ガラスルツボ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2009099084A1 JPWO2009099084A1 (ja) | 2011-05-26 |
JP5252157B2 true JP5252157B2 (ja) | 2013-07-31 |
Family
ID=40952158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009552483A Active JP5252157B2 (ja) | 2008-02-05 | 2009-02-04 | 石英ガラスルツボ |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100314400A1 (ja) |
EP (1) | EP2248776A4 (ja) |
JP (1) | JP5252157B2 (ja) |
KR (1) | KR20100128288A (ja) |
CN (1) | CN101970362A (ja) |
TW (1) | TWI396780B (ja) |
WO (1) | WO2009099084A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5289294B2 (ja) * | 2009-12-14 | 2013-09-11 | 株式会社Sumco | シリコン単結晶引上げ用石英ルツボ |
JP5289293B2 (ja) * | 2009-12-14 | 2013-09-11 | 株式会社Sumco | 単結晶引上げ用石英ルツボ |
JP5618409B2 (ja) * | 2010-12-01 | 2014-11-05 | 株式会社Sumco | シリカガラスルツボ |
JP5762945B2 (ja) * | 2011-12-30 | 2015-08-12 | 株式会社Sumco | シリカガラスルツボ |
CN102586856B (zh) * | 2012-02-01 | 2015-03-11 | 江西赛维Ldk太阳能高科技有限公司 | 一种提高硅锭利用率和籽晶使用次数的坩埚及其制备方法 |
US9863062B2 (en) | 2013-03-14 | 2018-01-09 | Corner Star Limited | Czochralski crucible for controlling oxygen and related methods |
US20140261155A1 (en) * | 2013-03-15 | 2014-09-18 | Memc Electronic Materials, Inc. | Crucible for controlling oxygen and related methods |
USD771167S1 (en) | 2013-08-21 | 2016-11-08 | A.L.M.T. Corp. | Crucible |
CN105849320B (zh) * | 2013-12-28 | 2018-07-06 | 胜高股份有限公司 | 石英玻璃坩埚及其制造方法 |
JP6351534B2 (ja) * | 2015-04-01 | 2018-07-04 | クアーズテック株式会社 | シリコン単結晶引き上げ用石英ガラスルツボ |
AT14854U1 (de) * | 2015-07-03 | 2016-07-15 | Plansee Se | Behälter aus Refraktärmetall |
US10124923B1 (en) * | 2015-11-19 | 2018-11-13 | Creative Edge Design Group Ltd. | Flexible product package with push-up |
JP7150250B2 (ja) * | 2018-08-07 | 2022-10-11 | 株式会社Sumco | 石英ガラスルツボおよび石英ガラスルツボの製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5738398A (en) * | 1980-08-12 | 1982-03-03 | Toshiba Ceramics Co Ltd | Quartz glass crucible for pulling up silicon single crystal |
JPS6126593A (ja) * | 1984-07-13 | 1986-02-05 | Toshiba Ceramics Co Ltd | シリコン単結晶引上用カ−ボンルツボ |
JPH01261293A (ja) * | 1988-04-12 | 1989-10-18 | Mitsubishi Metal Corp | シリコン単結晶引上げ用石英ルツボ |
JPH04349192A (ja) * | 1991-05-27 | 1992-12-03 | Nippon Koujiyundo Sekiei Kk | シリコン単結晶引上げ用石英ルツボ |
WO2002014587A1 (fr) * | 2000-08-15 | 2002-02-21 | Shin-Etsu Handotai Co., Ltd. | Creuset en quartz et procede de fabrication d'un monocristal |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB816334A (en) * | 1954-12-24 | 1959-07-08 | Telefunken Gmbh | Improvements in or relating to crucibles |
JP4447738B2 (ja) * | 2000-05-31 | 2010-04-07 | 信越石英株式会社 | 多層構造の石英ガラスルツボの製造方法 |
JP4592037B2 (ja) * | 2000-05-31 | 2010-12-01 | 信越石英株式会社 | 石英ガラスルツボの製造方法 |
JP4166241B2 (ja) | 2003-05-01 | 2008-10-15 | 信越石英株式会社 | シリコン単結晶引上げ用石英ガラスルツボ及びその製造方法 |
DE602004029057D1 (de) * | 2003-05-30 | 2010-10-21 | Heraeus Quarzglas | Quarzglastiegel zum ziehen von siliciumeinkristall |
JP2007076974A (ja) | 2005-09-15 | 2007-03-29 | Toshiba Ceramics Co Ltd | シリコン単結晶引上用ルツボ |
-
2009
- 2009-02-04 KR KR1020107019593A patent/KR20100128288A/ko active IP Right Grant
- 2009-02-04 EP EP09709309.0A patent/EP2248776A4/en not_active Withdrawn
- 2009-02-04 WO PCT/JP2009/051845 patent/WO2009099084A1/ja active Application Filing
- 2009-02-04 CN CN200980104583XA patent/CN101970362A/zh active Pending
- 2009-02-04 US US12/866,203 patent/US20100314400A1/en not_active Abandoned
- 2009-02-04 JP JP2009552483A patent/JP5252157B2/ja active Active
- 2009-02-05 TW TW098103733A patent/TWI396780B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5738398A (en) * | 1980-08-12 | 1982-03-03 | Toshiba Ceramics Co Ltd | Quartz glass crucible for pulling up silicon single crystal |
JPS6126593A (ja) * | 1984-07-13 | 1986-02-05 | Toshiba Ceramics Co Ltd | シリコン単結晶引上用カ−ボンルツボ |
JPH01261293A (ja) * | 1988-04-12 | 1989-10-18 | Mitsubishi Metal Corp | シリコン単結晶引上げ用石英ルツボ |
JPH04349192A (ja) * | 1991-05-27 | 1992-12-03 | Nippon Koujiyundo Sekiei Kk | シリコン単結晶引上げ用石英ルツボ |
WO2002014587A1 (fr) * | 2000-08-15 | 2002-02-21 | Shin-Etsu Handotai Co., Ltd. | Creuset en quartz et procede de fabrication d'un monocristal |
Also Published As
Publication number | Publication date |
---|---|
EP2248776A4 (en) | 2013-10-30 |
EP2248776A1 (en) | 2010-11-10 |
CN101970362A (zh) | 2011-02-09 |
JPWO2009099084A1 (ja) | 2011-05-26 |
TW200940753A (en) | 2009-10-01 |
WO2009099084A1 (ja) | 2009-08-13 |
KR20100128288A (ko) | 2010-12-07 |
TWI396780B (zh) | 2013-05-21 |
US20100314400A1 (en) | 2010-12-16 |
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