US20100123386A1 - Phosphor-Coated Light Extraction Structures for Phosphor-Converted Light Emitting Devices - Google Patents

Phosphor-Coated Light Extraction Structures for Phosphor-Converted Light Emitting Devices Download PDF

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US20100123386A1
US20100123386A1 US12/617,680 US61768009A US2010123386A1 US 20100123386 A1 US20100123386 A1 US 20100123386A1 US 61768009 A US61768009 A US 61768009A US 2010123386 A1 US2010123386 A1 US 2010123386A1
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phosphor
layer
light emitting
thin
emitting device
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Chieh Chen
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Maven Optronics International Ltd
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MAVEN Optronics Corp
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Assigned to MAVEN OPTRONICS CORP. reassignment MAVEN OPTRONICS CORP. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHEN, CHIEH
Publication of US20100123386A1 publication Critical patent/US20100123386A1/en
Priority to US13/970,408 priority patent/US9210763B2/en
Priority to US14/934,938 priority patent/US10038123B2/en
Assigned to MAVEN OPTRONICS INTERNATIONAL, LTD. reassignment MAVEN OPTRONICS INTERNATIONAL, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MAVEN OPTRONICS CORP.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Definitions

  • the invention relates generally to light emitting devices and more particularly to a thin-film phosphor deposition process for forming a thin-film phosphor layer adjacent to light extraction structures or adjacent to semiconductor light emitting devices.
  • SSL-LEDs Solid-State Lighting through Light Emitting Diodes
  • SSL-LED is a disruptive technology that has the potential to displace vacuum or gas tubes used in traditional incandescent or fluorescent lighting.
  • Advantages of SSL-LEDs over conventional light sources include: (1) higher efficiency and associated energy savings; (2) better color rendering; (3) small form factor; (4) ruggedness; (5) longer operational lifetime and low maintenance; (6) environmentally friendly; and (7) low fabrication costs.
  • a narrowband emission resulting from radiative recombination in the LED is transformed into broadband white light spectrum.
  • Such broadband white light spectrum can be generated by three general approaches.
  • a first approach is a wavelength-conversion approach by using an ultraviolet (“UV”) LED to excite multi-color phosphors that emit visible light at down-converted wavelengths.
  • a second approach is a color-mixing approach by combining multiple LEDs, each of which generates light of a different color.
  • a third approach is a hybrid between the two approaches described above. The current generation of commercially available white LEDs is primarily based on this hybrid approach.
  • a first approach is a slurry method involving the use of phosphor grains or particles 1 blended in a liquid polymer system, such as polypropylene, polycarbonate, epoxy resin, or silicone resin.
  • a liquid polymer system such as polypropylene, polycarbonate, epoxy resin, or silicone resin.
  • the mixed phosphor slurry is dispensed on or surrounding an LED chip 2 , and then the liquid polymer system is dried or cured.
  • the LED chip 2 along with the phosphor slurry can be disposed in a reflector cup 3 , as depicted in FIG. 1A .
  • a color temperature of a light emitting device can be determined by comparing its hue with a theoretical, heated blackbody radiator.
  • a temperature, expressed in terms of degrees Kelvin, at which the heated blackbody radiator matches the hue of the light emitting device is that device's color temperature.
  • An incandescent light source can be close to being a blackbody radiator, but many other light emitting devices do not emit radiation in the form of a blackbody curve and are, therefore, assigned a CCT.
  • a CCT of a light emitting device is a color temperature of a blackbody radiator that most closely matches the device's perceived color. The higher the Kelvin rating, the “cooler” or more blue the light.
  • a blue LED chip dispensed with a yellow phosphor by the slurry method can have a typical CCT that varies from about 5,800 K to about 7,200 K across a range of 1,400 K for light emission angles at ⁇ 70° from a center light-emitting axis of the LED. Because of the presence of colored rings, the CCT is typically higher at or near the center axis than in the periphery, where the emitted light tends to be more yellow.
  • a second phosphor coating method is an Electrophoretic Deposition (“EPD”) method for the manufacture of phosphor-converted white LEDs, as depicted in FIG. 1B .
  • EPD Electrophoretic Deposition
  • a phosphor is electrically charged by adding a proper amount of an electrolyte in a liquid solvent to form a liquid suspension, and is biased by an electrical field. Then, surface charged phosphor particles are moved to an electrode of counter-polarity and coated on the electrode. EPD of the phosphor particles creates a phosphor layer 4 of relatively uniform thickness that can produce white light of greater uniformity and reduced instances of colored rings. While achieving greater color uniformity, the EPD method is generally lacking in its ability to deposit phosphors directly over an electrically nonconductive surface.
  • a phosphor layer is typically coated directly over a LED chip 5 , according to the so-called proximate phosphor configuration.
  • This configuration tends to be inefficient in terms of light scattering, since the proximate phosphor layer can direct about 60% of total white light emission back towards the LED chip 5 , where high loss can occur.
  • Another drawback of the EPD method is that certain phosphors are susceptible to degradation by the solvent, thereby limiting the general applicability of the EPD method.
  • FIG. 2 More recently and as depicted in FIG. 2 , another approach involves forming a luminescent ceramic plate 6 by heating phosphor particles at high pressure until surfaces of the phosphor particles begin to soften and melt. The partially melted particles can stick together to form the ceramic plate 6 including a rigid agglomerate of the particles.
  • the luminescent ceramic plate 6 is disposed in a path of light emitted by an LED chip 7 , which is disposed over a set of electrodes 8 . While providing benefits in terms of robustness, reduced sensitivity to temperature, and reduced color variations from chip to chip, a resulting package efficiency can be unsatisfactory due to the proximate phosphor configuration.
  • a scattering efficiency (also sometimes referred to as a package efficiency) is typically between 40% to 60% for commercially available white LEDs, with efficiency losses due to light absorption by internal package components such as an LED chip, a lead frame, or sub-mount.
  • FIG. 3 depicts an example of a phosphor-converted white LED with yellow phosphor 31 powered by a blue LED chip 32 , where a primary blue light 34 undergoing color mixing with a secondary light 35 of yellow color to generate a white color.
  • a main source of light loss results from absorption of light by the LED chip 32 . Because the LED chip 32 is typically formed of high-refractive index materials, photons tend to be trapped within the LED chip 32 due to Total Internal Reflection (“TIR”) once the photons strike and enter the LED chip 32 .
  • TIR Total Internal Reflection
  • Another potential source of light loss results from imperfections in a mirror reflector 33 in the LED package.
  • a primary light 36 emitted by the LED chip 32 can be reflected back to the chip 32 by the phosphor powders 31 or by the mirror reflector 33 .
  • Second, down-converted secondary light 37 emitted by the phosphor powders 31 can scatter backward towards the LED chip 32 .
  • Third, both primary light and secondary light 38 can be reflected back towards the chip 32 due to TIR at an air-LED package interface.
  • a hemispheric lens 39 can be used to reduce instances of TIR at the air-package interface.
  • the phosphor powders 31 desirably should not be placed directly over the chip surface, but rather should be placed at a certain distance from the LED chip 32 . Furthermore, a thinner phosphor layer would reduce instances of backward scattering of secondary light by the phosphor powders 31 .
  • Certain embodiments of the invention relate to producing a high-efficiency white light emitting device incorporating a thin-film phosphor layer.
  • a light emitting semiconductor device such as an LED
  • a light extraction structure is desirably incorporated to reduce TIR of light within an LED package.
  • the light extraction structure can involve using, for example, a hemispherical lens, a microlens array, or a Fresnel lens.
  • the light extraction structure is typically formed of an optically transparent or translucent material, which is typically electrically nonconductive.
  • a deposition method of a thin-film phosphor layer disclosed herein can be used to form conformal thin-film phosphor layers directly over an electrically nonconductive surface as well as an electrically conductive surface.
  • the conformal thin-film phosphor layer also can be deposited over a flat surface as well as a non-flat surface, such as a convex or concave surface.
  • Some embodiments of the invention relate to producing a high-efficiency phosphor-converted light emitting device by disposing a conformal thin-film phosphor layer over a light extraction lens structure.
  • one embodiment involves producing a phosphor-coated lens by directly depositing a thin-film phosphor layer on an electrically nonconductive light extraction lens structure, such as a hemispherical lens formed of epoxy, silicone, poly(methyl methacrylate), polycarbonate, glass, or a quartz material.
  • the lens structure coated with the thin-film phosphor layer can be connected to an LED to produce a high-efficiency remote phosphor configuration.
  • An air gap can be included for this remote phosphor configuration to increase the light extraction efficiency.
  • Some embodiments of the invention relate to producing a phosphor microlens by depositing a thin-film phosphor layer over a microlens array.
  • the phosphor-coated microlens array can be laminated over a light emitting device to form a high-efficiency phosphor-converted light emitting device.
  • Some embodiments of the invention relate to producing a phosphor-coated Fresnel lens by depositing a thin-film phosphor layer over a Fresnel lens.
  • the phosphor-coated Fresnel lens can be laminated over a light emitting device to form a high-efficiency phosphor-converted light emitting device.
  • Some embodiments of the invention relate to disposing a substantially planar thin-film phosphor layer over an optical path of a light emitting device. For certain LED applications such as backlighting for Liquid Crystal Displays (“LCDs”), a small etendue light beam emitted from a light emitting device is involved.
  • some embodiments of the invention relate to producing a substantially planar thin-film phosphor layer that is disposed over a substantially planar surface of a light emitting device.
  • One specific embodiment involves disposing a thin-film phosphor layer directly over a surface of a light emitting device.
  • Another embodiment involves disposing a thin-film phosphor layer over a light emitting device with an optically transparent or translucent planar spacer layer disposed in between.
  • a photonic crystal array structure is effective as a light extraction mechanism for light emitting devices producing a small etendue light beam.
  • certain embodiments involve producing a high-efficiency phosphor-converted photonic crystal light emitting device by disposing a substantially planar thin-film phosphor layer over a surface of a photonic crystal array structure, such as a two-dimensional photonic crystal array structure.
  • One specific embodiment of the invention relates to a phosphor-coated light extraction structure, which includes: (1) a light extraction structure including a coating surface; and (2) a thin-film phosphor layer including at least one phosphor powder layer and at least one polymer layer serving as a binder for the at least one phosphor powder layer, wherein the thin-film phosphor layer is conformally disposed adjacent to the coating surface of the light extraction structure.
  • a phosphor-converted light emitting device which includes: (1) a light emitting device; and (2) a thin-film phosphor layer disposed in an optical path of the light emitting device, wherein a thickness of the thin-film phosphor layer is in the range of 1 nm to 100 ⁇ m, and the thin-film phosphor layer includes: (a) a first phosphor powder layer including first phosphor particles; and (b) a first polymer layer adjacent to the first phosphor powder layer, the first polymer layer serving as a binder for the first phosphor particles.
  • Another specific embodiment of the invention relates to a method of forming phosphor-converted light emitting devices.
  • the method includes: (1) providing a packaging substrate including an array of submount reflectors, which can be an array of reflector cups; (2) connecting light emitting devices to respective submount reflectors of the packaging substrate; (3) providing a phosphor-coated microlens array; (4) connecting the phosphor-coated microlens array to the packaging substrate; and (5) dicing the packaging substrate to form individual phosphor-converted light emitting devices.
  • Another specific embodiment of the invention relates to a method of forming a phosphor-converted light emitting device.
  • the method includes: (1) forming a thin-film phosphor layer adjacent to a hemispherical lens, the thin-film phosphor layer including a parylene-based polymer as a binder material; and (2) connecting the phosphor-coated hemispherical lens to a light emitting device.
  • Another specific embodiment of the invention relates to a method of forming a phosphor-converted light emitting device.
  • the method includes: (1) forming a thin-film phosphor layer adjacent to a microlens array, the thin-film phosphor layer including a parylene-based polymer as a binder material; and (2) connecting the phosphor-coated microlens array to a light emitting device.
  • a further specific embodiment of the invention relates to a method of forming a phosphor-converted light emitting device.
  • the method includes: (1) forming a thin-film phosphor layer including a parylene-based polymer; and (2) connecting the thin-film phosphor layer to a photonic crystal light emitting device.
  • FIG. 1A depicts a proximate phosphor-in-cup configuration of a conventional white LED formed using a slurry method.
  • FIG. 1B depicts a proximate phosphor configuration of a conventional white LED formed using EPD.
  • FIG. 2 depicts a proximate phosphor configuration of a conventional white LED formed by lamination with a luminescent ceramic plate.
  • FIG. 3 depicts typical sources of light losses, including light scattering by phosphor particles, TIR at material interfaces, and light absorption at a surface of a light emitting device.
  • FIG. 4A depicts a single-color thin-film phosphor film stack formed using a conformal thin-film phosphor deposition process, according to an embodiment of the invention.
  • FIG. 4B depicts a multi-color thin-film phosphor composite film stack formed using a conformal thin-film phosphor deposition process, according to an embodiment of the invention.
  • FIG. 5A depicts a thin-film conformal phosphor film stack deposited on an inner concave surface of a hollow hemispherical light extraction lens, according to an embodiment of the invention.
  • FIG. 5B depicts a thin-film conformal phosphor film stack deposited on a bottom surface of a solid hemispherical light extraction lens, according to an embodiment of the invention.
  • FIG. 5C depicts a thin-film conformal phosphor film stack deposited on an outer convex surface of a hemispherical light extraction lens, according to an embodiment of the invention.
  • FIG. 6 depicts a batch coating process with thin-film phosphor layers conformally deposited on inner concave surfaces of multiple, hollow hemispherical lenses, according to an embodiment of the invention.
  • FIG. 7A depicts a phosphor-converted LED with a thin-film phosphor layer on an inner concave surface of a hemispherical lens structure produced using a conformal thin-film phosphor deposition process, according to
  • FIG. 7B depicts a phosphor-converted LED produced with a thin-film phosphor layer disposed on a bottom surface of a hemispherical lens structure, according to an embodiment of the invention.
  • FIG. 7C depicts a phosphor-converted LED with a thin-film phosphor layer disposed on an outer convex hemispherical lens structure produced using a conformal thin-film phosphor deposition process, according to an embodiment of the invention.
  • FIG. 8A depicts the phosphor-converted LED of FIG. 7A with a diffuser lens surrounding a light emitting device, according to an embodiment of the invention.
  • FIG. 8B depicts the phosphor-converted LED of FIG. 7B with a diffuser lens surrounding a light emitting device, according to an embodiment of the invention.
  • FIG. 8C depicts the phosphor-converted LED of FIG. 7C with a diffuser lens surrounding a light emitting device, according to an embodiment of the invention.
  • FIG. 9A depicts a microlens array coated with a thin-film phosphor layer, according to an embodiment of the invention.
  • FIG. 9B depicts a phosphor-coated microlens array laminated over a semiconductor substrate, according to an embodiment of the invention.
  • FIG. 9C depicts a semiconductor substrate laminated with a phosphor-coated microlens array being diced into separate phosphor-converted devices, according to an embodiment of the invention.
  • FIG. 10A depicts a thin-film phosphor layer disposed over a surface of a light emitting device, according to an embodiment of the invention.
  • FIG. 10B depicts a thin-film phosphor layer disposed over a light emitting device with a planar spacer layer in between, according to an embodiment of the invention.
  • FIG. 10C depicts a thin-film phosphor layer disposed over an LED package, according to an embodiment of the invention.
  • FIG. 11 depicts a phosphor-converted photonic crystal light emitting device, according to an embodiment of the invention.
  • FIG. 12A through FIG. 13B depict a wafer-level, batch packaging process for light emitting devices, according to an embodiment of the invention.
  • a set refers to a collection of one or more components.
  • a set of layers can include a single layer or multiple layers.
  • Components of a set also can be referred to as members of the set.
  • Components of a set can be the same or different.
  • components of a set can share one or more common characteristics.
  • adjacent refers to being near or adjoining. Adjacent components can be spaced apart from one another or can be in actual or direct contact with one another. In some instances, adjacent components can be connected to one another or can be formed integrally with one another.
  • connection refers to an operational coupling or linking.
  • Connected components can be directly coupled to one another or can be indirectly coupled to one another, such as via another set of components.
  • the terms “substantially” and “substantial” refer to a considerable degree or extent. When used in conjunction with an event or circumstance, the terms can refer to instances in which the event or circumstance occurs precisely as well as instances in which the event or circumstance occurs to a close approximation, such as accounting for typical tolerance levels of the manufacturing operations described herein.
  • electrically conductive and “electrical conductivity” refer to an ability to transport an electric current
  • electrically nonconductive and “electrical nonconductivity” refer to a lack of ability to transport an electric current
  • Electrically conductive materials typically correspond to those materials that exhibit little or no opposition to flow of an electric current
  • electrically nonconductive materials typically correspond to those materials within which an electric current has little or no tendency to flow.
  • One measure of electrical conductivity (or electrical nonconductivity) is in terms of Siemens per meter (“S ⁇ m ⁇ 1 ”).
  • an electrically conductive material is one having a conductivity greater than about 10 4 S ⁇ m ⁇ 1 , such as at least about 10 5 S ⁇ m ⁇ 1 or at least about 10 6 S ⁇ m ⁇ 1
  • an electrically nonconductive material is one having a conductivity less than about 10 4 S ⁇ m ⁇ 1 , such as less than or equal to about 10 3 S ⁇ m ⁇ 1 or less than or equal to about 10 2 S ⁇ m ⁇ 1 .
  • Electrical conductivity (or electrical nonconductivity) of a material can sometimes vary with temperature. Unless otherwise specified, electrical conductivity (or electrical nonconductivity) of a material is defined at room temperature.
  • Quantum efficiency refers to a ratio of the number of output photons to the number of input photons.
  • a size of the particle refers to a characteristic dimension.
  • a size of the particle can refer to a diameter of the particle.
  • a size of the particle can refer to an average of various orthogonal dimensions of the particle.
  • a size of a particle that is a spheroidal can refer to an average of a major axis and a minor axis of the particle.
  • a size of a set of particles can refer to a typical size of a distribution of sizes, such as an average size, a median size, or a peak size.
  • alkane refers to a saturated hydrocarbon molecule.
  • an alkane can include from 1 to 100 carbon atoms.
  • the term “lower alkane” refers to an alkane that includes from 1 to 20 carbon atoms, such as, for example, from 1 to 10 carbon atoms, while the term “upper alkane” refers to an alkane that includes more than 20 carbon atoms, such as, for example, from 21 to 100 carbon atoms.
  • branched alkane refers to an alkane that includes one or more branches, while the term “unbranched alkane” refers to an alkane that is straight-chained.
  • cycloalkane refers to an alkane that includes one or more ring structures.
  • heteroalkane refers to an alkane that has one or more of its carbon atoms replaced by one or more heteroatoms, such as, for example, N, Si, S, O, and P.
  • substituted alkane refers to an alkane that has one or more of its hydrogen atoms replaced by one or more substituent groups, such as, for example, halo groups, hydroxy groups, alkoxy groups, carboxy groups, thio groups, alkylthio groups, cyano groups, nitro groups, amino groups, alkylamino groups, dialkylamino groups, silyl groups, and siloxy groups, while the term “un-substituted alkane” refers to an alkane that lacks such substituent groups. Combinations of the above terms can be used to refer to an alkane having a combination of characteristics.
  • branched lower alkane can be used to refer to an alkane that includes from 1 to 20 carbon atoms and one or more branches.
  • alkanes include methane, ethane, propane, cyclopropane, butane, 2-methylpropane, cyclobutane, and charged, hetero, or substituted forms thereof.
  • alkyl group refers to a monovalent form of an alkane.
  • an alkyl group can be envisioned as an alkane with one of its hydrogen atoms removed to allow bonding to another group of a molecule.
  • the term “lower alkyl group” refers to a monovalent form of a lower alkane, while the term “upper alkyl group” refers to a monovalent form of an upper alkane.
  • the term “branched alkyl group” refers to a monovalent form of a branched alkane, while the term “unbranched alkyl group” refers to a monovalent form of an unbranched alkane.
  • cycloalkyl group refers to a monovalent form of a cycloalkane
  • heteroalkyl group refers to a monovalent form of a heteroalkane
  • substituted alkyl group refers to a monovalent form of a substituted alkane
  • un-substituted alkyl group refers to a monovalent form of an unsubstituted alkane
  • alkyl groups include methyl, ethyl, n-propyl, isopropyl, cyclopropyl, butyl, isobutyl, t-butyl, cyclobutyl, and charged, hetero, or substituted forms thereof.
  • an arene refers to an aromatic hydrocarbon molecule.
  • an arene can include from 5 to 100 carbon atoms.
  • the term “lower arene” refers to an arene that includes from 5 to 20 carbon atoms, such as, for example, from 5 to 14 carbon atoms, while the term “upper arene” refers to an arene that includes more than 20 carbon atoms, such as, for example, from 21 to 100 carbon atoms.
  • the term “monocyclic arene” refers to an arene that includes a single aromatic ring structure, while the term “polycyclic arene” refers to an arene that includes more than one aromatic ring structure, such as, for example, two or more aromatic ring structures that are bonded via a carbon-carbon single bond or that are fused together.
  • the term “heteroarene” refers to an arene that has one or more of its carbon atoms replaced by one or more heteroatoms, such as, for example, N, Si, S, O, and P.
  • substituted arene refers to an arene that has one or more of its hydrogen atoms replaced by one or more substituent groups, such as, for example, alkyl groups, alkenyl groups, alkynyl groups, iminyl groups, halo groups, hydroxy groups, alkoxy groups, carboxy groups, thio groups, alkylthio groups, cyano groups, nitro groups, amino groups, alkylamino groups, dialkylamino groups, silyl groups, and siloxy groups, while the term “un-substituted arene” refers to an arene that lacks such substituent groups. Combinations of the above terms can be used to refer to an arene having a combination of characteristics.
  • the term “monocyclic lower alkene” can be used to refer to an arene that includes from 5 to 20 carbon atoms and a single aromatic ring structure.
  • examples of arenes include benzene, biphenyl, naphthalene, pyridine, pyridazine, pyrimidine, pyrazine, quinoline, isoquinoline, and charged, hetero, or substituted forms thereof.
  • aryl group refers to a monovalent form of an arene.
  • an aryl group can be envisioned as an arene with one of its hydrogen atoms removed to allow bonding to another group of a molecule.
  • the term “lower aryl group” refers to a monovalent form of a lower arene, while the term “upper aryl group” refers to a monovalent form of an upper arene.
  • the term “monocyclic aryl group” refers to a monovalent form of a monocyclic arene, while the term “polycyclic aryl group” refers to a monovalent form of a polycyclic arene.
  • heteroaryl group refers to a monovalent form of a heteroarene.
  • substituted aryl group refers to a monovalent form of a substituted arene
  • un-substituted arene group refers to a monovalent form of an unsubstituted arene.
  • aryl groups include phenyl, biphenylyl, naphthyl, pyridinyl, pyridazinyl, pyrimidinyl, pyrazinyl, quinolyl, isoquinolyl, and charged, hetero, or substituted forms thereof.
  • arylene group refers to a bivalent form of an arene.
  • an arylene group can be envisioned as an arene with two of its hydrogen atoms removed to allow bonding to one or more additional groups of a molecule.
  • the term “lower arylene group” refers to a bivalent form of a lower arene, while the term “upper arylene group” refers to a bivalent form of an upper arene.
  • monocyclic arylene group refers to a bivalent form of a monocyclic arene, while the term “polycyclic arylene group” refers to a bivalent form of a polycyclic arene.
  • heteroarylene group refers to a bivalent form of a heteroarene.
  • substituted arylene group refers to a bivalent form of a substituted arene
  • un-substituted arylene group refers to a bivalent form of an unsubstituted arene.
  • arylene groups include phenylene, biphenylylene, naphthylene, pyridinylene, pyridazinylene, pyrimidinylene, pyrazinylene, quinolylene, isoquinolylene, and charged, hetero, or substituted forms thereof.
  • Certain embodiments of the invention relate to the formation of a thin-film phosphor layer of substantially uniform thickness that can be conformally disposed in an optical path of a light emitting device, such as an LED, thereby producing substantially uniform white light with little or no colored rings.
  • This thin-film phosphor layer can be prepared by an improved deposition method involving: (1) forming a phosphor powder layer that is substantially uniformly deposited on a substrate surface; and (2) forming a polymer binder layer to fill gaps among loosely packed phosphor particles, thereby forming a substantially continuous, thin-film phosphor layer.
  • Phosphor conversion efficiency of the thin-film phosphor layer can be significantly improved because a thinner layer of a precisely controlled quantity of phosphor powders can be disposed in an optical path, thereby reducing light scattering losses. Also, color homogeneity of the thin-film phosphor layer can be significantly improved due to substantially uniform deposition of phosphor particles.
  • One method of forming an uniform, thin-film phosphor layer is to introduce electrostatic charges among phosphor particles during deposition of the phosphor particles. The electrostatic charges among the phosphor particles can self-balance and adjust their distribution, thereby promoting a substantially uniform distribution of the phosphor particles.
  • Another method of forming an uniform, thin-film phosphor layer is through a phosphor dispensing mechanism, such as a showerhead mechanism in a deposition chamber, or through a rotational substrate holding mechanism, such as a turn table that holds a substrate.
  • a phosphor dispensing mechanism such as a showerhead mechanism in a deposition chamber
  • a rotational substrate holding mechanism such as a turn table that holds a substrate.
  • temperature stability of the thin-film phosphor layer can be significantly improved because the polymer binder layer can be thermally stable up to at least about 300° C. or more.
  • white color consistency can be maintained in a tight color coordinate by a coating process with precisely controlled quantities of deposited phosphor particles through a phosphor powder delivery mechanism.
  • White color rendering can be precisely tuned with a layer-by-layer sequential deposition of multi-color phosphors, such as deposition of a red phosphor layer, deposition of a green phosphor layer, and then deposition of a blue phosphor layer.
  • the ratio of multi-color phosphors can be precisely controlled in a resulting composite multi-color phosphor film stack.
  • the color coordinate and CCT of a white LED fabricated by the phosphor thin-film process can be precisely controlled. This, in turn, can significantly simplify (or even avoid) a binning process.
  • a consistent white color coordinate can be achieved from lightly varied blue LED chips by tuning the dosage of a multi-color phosphor film stack.
  • This color compensation method can compensate for color variations of the blue LED chips using different compositions or amounts of phosphor contents. In such manner, white LED yield can be significantly increased for color sensitive applications, such as display backlighting using white LEDs.
  • a thin-film phosphor coating method is a batch phosphor coating process.
  • Multiple light emitting devices can be deposited with thin-film phosphor in one coating operation.
  • multiple LED lenses can be deposited with thin-film phosphor in one coating operation. Similar to semiconductor chip manufacturing, a manufacturing cost per light emitting device can be significantly reduced, and a manufacturing throughput can be significantly increased by a batch process.
  • the deposition process of forming the thin-film phosphor layer is desirably held in a vacuum chamber. However, it will be appreciated that the deposition process also can take place in a deposition chamber filled with an inert gas, such as nitrogen, or in an atmospheric environment.
  • deposition of a thin-film phosphor layer can be used to form conformal thin-film phosphor layers directly over an electrically nonconductive surface.
  • the conformal thin-film phosphor also can be deposited on a non-flat surface, such as a convex or concave surface of an LED lens.
  • a variety of phosphors can be used.
  • a phosphor is formed from a luminescent material, namely one that emits light in response to an energy excitation.
  • Luminescence can occur based on relaxation from excited electronic states of atoms or molecules and, in general, can include, for example, chemiluminescence, electroluminescence, photoluminescence, thermoluminescence, triboluminescence, and combinations thereof.
  • photoluminescence which can include fluorescence and phosphorescence
  • an excited electronic state can be produced based on a light excitation, such as absorption of light.
  • Phosphors useful in accordance with the improved process include a variety of inorganic host materials doped by activator ions such as Ce 3+ and Eu 2+ , including garnets (e.g., (Y 1-a Gd a ) 3 (Al 1-b Ga b ) 5 O 12 :Ce 3+ with a, b ⁇ 0.2 or YAG:Ce 3+ ), silicates, orthosilicates, sulfides, and nitrides. Garnets and orthosilicates can be used as yellow-emitting phosphors, and nitrides can be used as red-emitting phosphors.
  • various other types of wavelength-conversion materials can be used, including organic dyes.
  • phosphors and other types of wavelength-conversion materials can exhibit photoluminescence with a quantum efficiency that is greater than about 30 percent, such as at least about 40 percent, at least about 50 percent, at least about 60 percent, at least about 70 percent, or at least about 80 percent, and can be up to about 90 percent or more.
  • a phosphor used in accordance with the improved process is provided in a powder form, namely as a set of particles.
  • the particles desirably have sizes in the range of about 1 nm to about 100 ⁇ m, such as from about 10 nm to about 30 ⁇ m, from about 100 nm to about 30 ⁇ m, from about 500 nm to about 30 ⁇ m, or from about 1 ⁇ m to about 30 ⁇ m.
  • the phosphor powder can be transported and deposited over the substrate surface by inertia effects, Brownian movement, thermophoresis, or electrical fields if the phosphor powder is electrically charged.
  • One approach to form a substantially uniformly distributed phosphor powder layer on the substrate surface is to entrain, carry, mobilize, or transport the phosphor powder from a phosphor canister by a set of carrier gases, such as clean, dry air or an inert gas such as nitrogen, and then spray the phosphor powder through a showerhead mechanism in a vacuum, inert gas, or atmospheric chamber.
  • the phosphor powder is ionized with the same positive or negative electrostatic charge during the phosphor transport process.
  • electrostatic spraying of the phosphor powder involves:
  • the phosphor powder is ionized with electrostatic charges by one, or a combination, of the following methods:
  • the substrate surface can be grounded to maintain an electric field potential for the deposition of the electrostatically charged phosphor powder.
  • Electrostatic charges also can be created on the phosphor powder or an electrically nonconductive substrate surface by Tribo frictional charging.
  • Tribo frictional charging when two different materials are brought into contact, there can be a transfer of charge from one to the other to offset an imbalance of charges. The magnitude and direction of the charge transfer can depend on a number of factors, including a chemical and electronic structure of both materials.
  • An opposite electrostatic charge can be created on an electrically nonconductive substrate surface with the Tribo frictional charging method.
  • negative charges can be created on the nonconductive substrate surface by one, or a combination, of the following:
  • the phosphor deposition process provides a number of advantages, including:
  • the deposited phosphor layer is initially a loosely packed powder layer.
  • a polymer thin film is deposited to fill gaps among phosphor particles and to form a substantially continuous thin-film layer.
  • CVD Chemical Vapor Deposition
  • another suitable deposition process can be used in place of, or in conjunction with, CVD to form the polymer layer.
  • deposition processes include other vapor deposition processes, such as thermal evaporation, electron-beam evaporation, or physical vapor deposition, as well as spray coating, dip coating, web coating, wet coating, and spin coating.
  • suitable polymers include a family of conformal coating polymers that can be used to form a binding matrix for a thin-film phosphor layer, according to an embodiment of the invention.
  • the family of polymers corresponds to a family of parylene-based polymers.
  • parylene-based polymers correspond to a variety of polyxylylene-based polymers, such as poly(p-xylylene) and its derivatives, and include, for example, polymers having a general repeating unit of the formula —CZZ′—Ar—CZ′′Z′′′—, wherein Ar is an arylene group (e.g., un-substituted, partially substituted, or fully substituted arylene group, such as phenylene), and wherein Z, Z′, Z′′, and Z′′ can be the same or different.
  • Ar is an arylene group (e.g., un-substituted, partially substituted, or fully substituted arylene group, such as phenylene)
  • Z, Z′, Z′′, and Z′′ can be the same or different.
  • Parylene N includes a repeating unit of the formula —CH 2 —C 6 H 4 —CH 2 —, and is used as a binder material to form a thin-film phosphor layer.
  • Parylene C including a repeating unit of the formula —CH 2 —C 6 H 3 Cl—CH 2 — is used as a binder material to form a thin-film phosphor layer. Parylene C can be produced from the same monomer as Parylene N, but modified with the substitution of a chlorine atom for one of the aromatic hydrogens.
  • Parylene D including a repeating unit of the formula —CH 2 —C 6 H 2 Cl 2 —CH 2 — is used as a binder material to form a thin-film phosphor layer. Parylene D can be produced from the same monomer as Parylene N, but modified with the substitution of two chlorine atoms for two of the aromatic hydrogens.
  • Parylene F a partially fluorinated parylene-based polymer referred to as Parylene F can be used.
  • Parylene F includes a repeating unit of the formula —CF 2 —C 6 H 4 —CF 2 —, and can be formed from various precursors, such as BrCF 2 —C 6 H 4 —CF 2 Br. It will be appreciated that these parylene-based polymers are provided by way of example, and a variety of other conformal coating polymers can be used.
  • polyimides examples include polyimides, fluorocarbon-based polymers (e.g., poly(tetrafluoroethylene)), poly(p-phenylene vinylene), poly(pyrrole), poly(thiophene), poly(2,4-hexadiyn-1,6-diol), fluorocarbon/organosilicon copolymers, poly(ethylene glycol), and their derivatives.
  • fluorocarbon-based polymers e.g., poly(tetrafluoroethylene)
  • poly(p-phenylene vinylene) poly(pyrrole)
  • poly(thiophene) poly(2,4-hexadiyn-1,6-diol)
  • fluorocarbon/organosilicon copolymers examples include poly(ethylene glycol), and their derivatives.
  • Thermal evaporation of acrylics also can be used to form a substantially continuous phosphor film.
  • Transport polymerization typically involves generating a vapor phase reactive intermediate from a precursor molecule at a location remote from a substrate surface, and then transporting the vapor phase reactive intermediate to the substrate surface.
  • the substrate surface can be kept below a melting temperature of reactive intermediates for polymerization.
  • Parylene F can be formed from the precursor BrCF 2 —C 6 H 4 —CF 2 Br by the removal of the bromine atoms to form the reactive intermediate *CF 2 —C 6 H 4 —CF 2 *, wherein * denotes a free radical.
  • This reactive intermediate can be formed at a location remote from a deposition chamber, and can be transported into the deposition chamber and condensed over the substrate surface, where polymerization takes place.
  • parylene-based polymer films can be formed from a variety of precursors, such as those having the formula (CZZ′Y) m —Ar—(CZ′′Z′′′Y′) n , wherein Ar is an arylene group (e.g., un-substituted, partially substituted, or fully substituted arylene group, such as phenylene), Z, Z′, Z′′, and Z′′′ can be the same or different, Y and Y′ can be the same or different and are removable to generate free radicals, m and n are each equal to zero or a positive integer, and a sum of m and n is less than or equal to a total number of sp 2 -hybridized carbons on Ar available for substitution.
  • precursors such as those having the formula (CZZ′Y) m —Ar—(CZ′′Z′′′Y′) n , wherein Ar is an arylene group (e.g., un-substituted, partially
  • X is a halogen such as Cl or F
  • x 0, 1, 2, 3, or 4
  • Ar is an arylene group (e.g., un-substituted, partially substituted, or fully substituted arylene group, such as phenylene)
  • Z, Z′, Z′′, and Z′′′ can be the same or different.
  • X is a halogen such as Cl or F
  • x 0, 1, 2, 3, or 4
  • parylene-based polymer film, or another type of polymer film, prepared by the CVD method is that it is a conformal coating with superior crevice penetration capability, thereby substantially filling gaps and voids within a phosphor powder layer.
  • Parylene F can achieve the best result for gap-filling
  • Parylene N can achieve the second best result for gap-filling among the family of parylene-based polymers.
  • Another aspect of a parylene-based polymer is that it has superior optical transparency in the visible light spectrum, rendering it a suitable filler material among a photoluminescent phosphor powder.
  • Another aspect of a parylene-based polymer is that its refractive index can be adjusted based on chemical composition.
  • a multi-layer of parylene-based polymer films can be formed as a composite thin-film phosphor stack.
  • This multi-layer structure can be formed by depositing a Parylene N film, with a refractive index of about 1.66, as a binder material among a phosphor powder, and then depositing a Parylene F film, with a refractive index of about 1.4, thereby enhancing light extraction due to index matching of the Parylene F film to ambient environment (e.g., air).
  • this multi-layer structure can be formed by depositing a first polymer film, with a first refractive index, as a binder material among a first phosphor powder layer to form a first phosphor layer adjacent to the substrate surface, depositing a second polymer film, with a second refractive index, as a binder material among a second phosphor powder layer to form a second phosphor layer adjacent to the first phosphor layer, and so on, where the first refractive index is greater than or equal to the second refractive index.
  • a parylene-based polymer, or another type of polymer can be formed as a substantially continuous film having a thickness in the range of a few tens of angstroms to about 100 ⁇ m, such as from about 1 nm to about 100 ⁇ m, from about 10 nm to about 100 ⁇ m, from about 100 nm to about 100 ⁇ m, from about 1 ⁇ m to about 100 ⁇ m, from about 1 ⁇ m to about 75 ⁇ m, from about 1 ⁇ m to about 30 ⁇ m, or from about 1 ⁇ m to about 10 ⁇ m.
  • the thickness of the film can exhibit a standard deviation of less than about 20 percent with respect to an average thickness, such as less than about 10 percent or less than about 5 percent.
  • a thickness of the initially deposited phosphor powder layer can be in the range of about 1 nm to about 60 ⁇ m, such as from about 10 nm to about 60 ⁇ m, from about 100 nm to about 40 ⁇ m, or from about 100 nm to about 20 ⁇ m.
  • the thickness of the phosphor powder layer can exhibit a standard deviation of less than about 20 percent with respect to an average thickness, such as less than about 10 percent or less than about 5 percent.
  • a distribution of the phosphor powder within the resulting film can be substantially uniform across an extent of the film, such that a weight density (e.g., mass or weight of phosphor particles per unit volume) or a number density (e.g., number of phosphor particles per unit volume) can exhibit a standard deviation of less than about 20 percent with respect to an average density, such as less than about 10 percent or less than about 5 percent.
  • a weight density e.g., mass or weight of phosphor particles per unit volume
  • a number density e.g., number of phosphor particles per unit volume
  • FIG. 4A An embodiment of a thin-film phosphor layer prepared by the CVD method is depicted in FIG. 4A .
  • a single-color phosphor powder layer 41 such as a YAG:Ce 3+ -based yellow phosphor, is initially deposited on a substrate surface 42 .
  • the substrate surface 42 can be a surface of a light extraction structure, which can be electrically nonconductive as in the case of a flexible plastic substrate.
  • a parylene-based polymer layer 43 is deposited, and another parylene-based polymer layer 44 is next deposited.
  • the parylene-based polymer layer 43 serves as a binder or a matrix that at least partially penetrates or surrounds the phosphor powder layer 41 , such that phosphor particles of the phosphor powder layer 41 are dispersed within the parylene-based polymer layer 43 .
  • the parylene-based polymer layers 43 and 44 can be formed from the same material or different materials.
  • a refractive index of the parylene-based polymer layer 43 is greater than a refractive index of the parylene-based polymer layer 44 .
  • the resulting phosphor coated structure 46 can be laminated or otherwise disposed adjacent to a light emitting semiconductor device to form a phosphor-converted light emitting device.
  • a multi-color phosphor thin-film stack 45 is formed by sequential deposition of a blue phosphor powder, a parylene-based polymer as a binder material for the blue phosphor powder, a green phosphor powder, a parylene-based polymer as a binder material for the green phosphor powder, a red phosphor power, and a parylene-based polymer as a binder material for the red phosphor powder.
  • the resulting phosphor coated structure 47 can be laminated or otherwise disposed adjacent to a light emitting semiconductor device to form a phosphor-converted white light emitting device, which can emit three down-converted secondary lights of respective colors by the phosphors.
  • a Color Rendering Index (“CRI”) of the phosphor-converted white light emitting device can be readily tuned, for example, when used in an indoor general illumination application with a warmer white light and improved color uniformity.
  • Another application of the phosphor-converted white light emitting device incorporating the multi-color thin-film phosphor stack 45 is for backlighting of LCDs, where a larger display color gamut can be achieved with three peak wavelengths corresponding to red, green, and blue light colors emitted by red, green, and blue phosphors, respectively.
  • an air/encapsulant interface is desirably convex and separated from a light source by a certain distance that depends on an effective diameter of the light source.
  • the encapsulant layer is formed with such a surface, and the surface is disposed at a certain distance from a light emitting device, such as an LED, and a reflector to ensure most, or all, of the light that leaves the light emitting device can escape from the encapsulant layer.
  • a hemispherical lens, a microlens array, or a Fresnel lens can be incorporated as a light extraction structure or lens.
  • Incorporating phosphor powders dispersed within a light extraction lens can sometimes yield light scattering losses within an LED package.
  • certain embodiments of the invention relate to forming a phosphor layer as a thin-film layer deposited on a coating surface of a light extraction lens.
  • a light extraction lens is typically formed of an optically transparent or translucent material, which is typically electrically nonconductive.
  • a deposition method of a thin-film phosphor layer disclosed herein can be used to form conformal thin-film phosphor layers directly over an electrically nonconductive surface as well as an electrically conductive surface.
  • the conformal thin-film phosphor layer also can be deposited over a flat surface as well as a non-flat surface, such as a convex or concave surface.
  • a hemispherically shaped lens can be used as a light extraction lens structure for phosphor-converted white LEDs.
  • the hemispherical lens is coated with a thin-film phosphor layer, resulting in a structure referred hereto as a phosphor-coated lens.
  • a thin-film phosphor layer 52 a is conformally deposited on an inner non-flat or non-planar surface of a hollow hemispherical lens 51 a . As depicted in FIG.
  • the inner non-flat surface is an inner concave surface having a generally curved profile, and this inner concave surface defines a cavity that faces a light emitting device during use.
  • the lens 51 a can be formed of an optically transparent material, such as epoxy, silicone, poly(methyl methacrylate), polycarbonate, glass, or quartz.
  • a thin-film phosphor layer 52 b is conformally deposited on a bottom, substantially flat or planar surface of a solid hemispherical lens 51 b , as depicted for a phosphor-coated lens 54 in FIG. 5B . This bottom, flat surface faces a light emitting device during use.
  • a thin-film phosphor layer 52 c is conformally deposited on an outer non-flat surface of a hemispherical lens 51 c , as depicted for a phosphor-coated lens 55 in FIG. 5C .
  • the outer non-flat surface is an outer convex surface having a generally curved profile, and this outer convex surface faces away from a light emitting device during use.
  • the hemispherical lens 51 c is a solid hemispherical lens, although it is also contemplated that the hemispherical lens 51 c can be a hollow hemispherical lens.
  • the phosphor layers 52 a , 52 b , and 52 c depicted in FIG. 5A through FIG. 5C can be single-color phosphor layers or multi-color phosphor layers.
  • the particular shapes and configurations depicted in FIG. 5A through FIG. 5C are provided by way of example, and various other embodiments are contemplated.
  • the phosphor-coated lenses 53 and 54 also can include a thin-film phosphor layer that is conformally deposited on their respective outer convex surfaces
  • the phosphor-coated lens 55 also can include a thin-film phosphor layer that is conformally deposited on its bottom, flat surface.
  • a phosphor-coated LED lens involves embedding or incorporating a substantially uniform phosphor powder layer onto a surface of a LED lens according to the phosphor deposition method described herein.
  • a phosphor-embedded LED lens can be formed as follows:
  • FIG. 6 depicts a batch coating process with thin-film phosphor layers 61 conformally deposited on inner concave surfaces of multiple, hollow hemispherical lenses 62 , according to an embodiment of the invention.
  • the thin-film phosphor deposition process described herein can be implemented as a batch process, and thin-film phosphor layers can be substantially simultaneously deposited on surfaces of desirable substrates, such as surfaces of LED lenses, thereby enhancing manufacturing throughput and lowering costs per coating substrate.
  • FIG. 7A through FIG. 7C depict various embodiments of phosphor-converted LEDs that can be produced by connecting a phosphor-coated lens (e.g., the phosphor-coated lenses 53 , 54 and 55 depicted in FIG. 5A through FIG. 5C ) to a suitable lead frame, a substantially flat submount reflector, or a cup reflector 72 . Connection can be accomplished using an appropriate encapsulant or adhesive, such as a silicone adhesive. Since a phosphor layer is placed at some distance from a light emitting device 74 , as depicted in FIG. 7A through FIG.
  • a CCT variation can be no greater than about 1,000 K over a 140° ( ⁇ 70° from a center light-emitting axis) range of light emission angles, such as no greater than about 800 K, no greater than about 500 K, or no greater than about 300 K, and down to about 200 K or less.
  • the phosphor-converted LEDs depicted in FIG. 7A through FIG. 7C it is desirable to form a cavity or an air gap 71 , 73 , or 75 between the thin-film phosphor layer and the light emitting device 74 .
  • the backward scattered secondary light has a higher probability of light reflection because of TIR at the air gap interface, due to the lower refractive index of the air gap (about 1) relative to the phosphor-coated lenses 53 , 54 and 55 .
  • the air gap 71 , 73 , or 75 tends to deflect secondary light outwards so as to escape from the phosphor-converted LEDs, thus further increasing the package efficiency.
  • another suitable low index material can be included in place of, or in conjunction with, air.
  • the light extraction lens initially can be connected to an LED or other light emitting device, and the thin-film phosphor layer next can be deposited on an outer surface of the light extraction lens to produce a phosphor-converted LED as depicted in FIG. 7C .
  • an optical cavity (e.g., corresponding to the air gap 71 , 73 , or 75 ) advantageously is formed with its boundary defined by a reflector layer of the submount reflector or the cup reflector 72 and the thin-film phosphor layer disposed over the cup reflector 72 .
  • the size and shape of the optical cavity can be designed so that a primary light emitted from the light emitting device 74 and a secondary light irradiated from the thin-film phosphor layer are well mixed.
  • the irradiation light pattern of the phosphor-converted LEDs depicted in FIG. 7A through FIG. 7C can be controlled by the size and shape of the optical cavity.
  • a smaller optically transparent or translucent hemispherical lens such as a lens 81 , 83 , or 85 depicted in FIG. 8A through FIG. 8C , is disposed surrounding the light emitting device 74 .
  • the smaller hemispherical lens 81 , 83 , or 85 can serve as a diffuser lens to extract more primary light out of the light emitting device 74 , such as from about 5% up to about 40% more primary light.
  • Micrometer-scale features such as a randomly or non-randomly (patterned) roughened surface, can be formed on convex surfaces of the smaller lenses 81 , 83 , and 85 to control an irradiation pattern of the primary light emitted from the light emitting device 74 .
  • the smaller lenses 81 , 83 , and 85 also can be implemented as substantially planar microlens arrays disposed over the light emitting device 74 .
  • a microlens array also can be used as a light extraction structure placed over a light emitting device.
  • the microlens array is coated with a thin-film phosphor layer, resulting in a structure referred hereto as a phosphor-coated microlens.
  • a thin-film phosphor layer 92 is conformally deposited on a surface of a microlens array 91 using a conformal thin-film phosphor deposition method.
  • the resulting phosphor-coated microlens array 94 is laminated over an LED semiconductor wafer 93 .
  • the LED semiconductor wafer 93 laminated with the phosphor-coated microlens array 94 is then diced or singulated into separate phosphor-converted LEDs 95 a , 95 b , and 95 c.
  • a number of variations can be implemented in a manufacturing process to produce phosphor-converted LEDs with a thin-film phosphor layer coated on a light extraction microlens array.
  • the microlens array initially can be manufactured on or laminated to an LED, and the thin-film phosphor layer next can be deposited on a surface of the microlens array to produce a phosphor-converted LED.
  • a thin-film phosphor layer similarly can be coated over a Fresnel lens to produce a phosphor-coated Fresnel lens, which can be connected to an LED to form a phosphor-converted LED.
  • Some embodiments of the invention relate to disposing a substantially planar thin-film phosphor layer over an optical path of a light emitting device, such as an LED. Even though a light extraction lens can be desirable to increase the light extraction efficiency for a packaged LED, it can sometimes increase the spread of light emitted from the packaged LED. In some applications incorporating LEDs as a light source, such as LED backlighting for LCDs, a small etendue light beam emitted from an LED is involved.
  • some embodiments of the invention relate to producing a substantially planar thin-film phosphor layer disposed over a substantially planar surface of an LED structure.
  • One specific embodiment involves disposing a thin-film phosphor layer directly over a surface of a light emitting device.
  • a thin-film phosphor layer 102 a formed as described herein is disposed over a light emitting side of a surface of a light emitting device 101 a.
  • FIG. 10B Another embodiment involves disposing a thin-film phosphor layer over a light emitting device with an optically transparent or translucent planar spacer layer in between.
  • a thin-film phosphor layer 102 b formed as described herein is disposed over an optically transparent or translucent spacer layer 103 , which, in turn, is disposed over a light emitting side of a surface of a light emitting device 101 b.
  • a thin-film phosphor layer 102 c formed as described herein is disposed over a substantially planar surface of a packaged LED, where a light emitting device 101 c is disposed in a suitable lead frame or cup reflector and is covered with an optically transparent or translucent encapsulant 104 , such as epoxy or a silicone resin. It is also contemplated that an air-filled gap or cavity can be included in place of, or in conjunction with, the encapsulant 104 to mix a primary light emitted from the light emitting device 101 c and a secondary light irradiated from the thin-film phosphor layer 102 c .
  • a light extraction structure is desirably incorporated to reduce TIR of light within the light emitting device.
  • One way to improve LED efficiency is to assist in the extraction of light from the high-index light emitting device.
  • InGaN LEDs a large fraction of energy can be emitted into waveguided modes internal to the LEDs, rather than radiation modes.
  • Light generated inside the LEDs can undergo TIR, and there can be a high probability of light absorption before light can escape from the LEDs.
  • a photonic crystal array structure can be effective as a light extraction mechanism for LEDs to produce a small etendue and highly collimated light beam.
  • a photonic crystal array structure of periodic variations of refractive index can improve light extraction by diffracting waveguided modes out of a light emitting device. Due to a planar two-dimensional periodic photonic lattice structure, photons can escape along a direction substantially perpendicular with respect to the light emitting device to generate small etendue light. Hence, a convex or hemispherical lens structure can be omitted for a photonic crystal light emitting device.
  • FIG. 11 a cross-sectional view of an embodiment of a phosphor-converted photonic crystal light emitting device is depicted, including a substrate 111 , a p-type semiconductor layer 112 , an active layer 113 , an n-type semiconductor layer 114 , an optically transparent or translucent electrode layer 115 , and a thin-film phosphor layer 116 .
  • the thin-film phosphor layer 116 can be implemented as a single-color phosphor layer or a multi-color phosphor film stack.
  • a photonic crystal structure is formed in or otherwise adjacent to the semiconductor layer 114 , where a set of air holes, gaps, or cavities 117 are etched away from the semiconductor layer 114 .
  • the air holes 117 can be filled with a low refractive index dielectric material.
  • a conformal coating material can be utilized to fill the air holes 117 , such as using the so-called gap filling process and with parylene-based dielectric materials, which can be prepared by vapor phase deposition and generally exhibit excellent conformal coating properties.
  • another embodiment of the phosphor-converted photonic crystal light emitting device is to use a low refractive index dielectric, such as Parylene-F or Parylene-N, in place of the air hole structure 117 .
  • the hole structure in the semiconductor layer 114 can create current crowding.
  • the transparent electrode 115 such as an Indium Tin Oxide (“ITO”) electrode, is formed over the photonic crystal structure.
  • ITO Indium Tin Oxide
  • the substantially planar thin-film phosphor layer 116 is then disposed over the transparent electrode 115 to form a phosphor-converted photonic crystal light emitting device.
  • the thin-film phosphor layer 116 can be disposed either by lamination of a prefabricated thin-film phosphor layer or by in-situ deposition of the thin-film phosphor layer 116 over the photonic crystal structure.
  • Another embodiment of the invention relates to a wafer-level, batch packaging process for light emitting devices incorporating a thin-film phosphor layer described herein.
  • the wafer-level, batch process can yield packaged light emitting devices that are thinner and with less lens materials consumed, more consistent performance, and improved reliability. Even more advantageously, thinner and more uniform phosphor layers can be disposed as part of the wafer-level process, and the packaged light emitting devices can have improved efficiencies and greater reliability and can operate with less heat generated.
  • a typical 200-mm aluminum, copper, or silicon wafer substrate 120 can hold as much as 10,000 LED packaging submount reflectors or reflector cups per substrate.
  • a total cost of the wafer-level packaging process can be shared by the multiple devices manufactured per batch. As such, the packaging cost is less per device in terms of total packaging costs.
  • the packaging substrate 120 is formed with an array of cups or depressions and using an aluminum, copper, or silicon wafer substrate, as depicted in FIG. 12A .
  • a reflector layer is deposited on the packaging substrate 120 to yield an array of reflector cups. It is desirable to have good reflectivity on a cup bottom or a cup wall so that backward scattered light can be reflected outward.
  • Electrodes of the light emitting devices can be, for example, wire bonded to the packaging substrate 120 .
  • Phosphor-coated microlens arrays 122 are formed, as depicted in FIG. 12B .
  • the phosphor-coated microlens arrays 122 are connected to respective reflector cups of the packaging substrate 120 , as depicted in FIG. 13A . It is also contemplated that a single phosphor-coated microlens array, which is sized to accommodate multiple reflector cups, can be connected to the packaging substrate 120 .
  • the packaging substrate 120 with the connected phosphor-coated microlens arrays 122 is diced or singulated to yield individual packaged light emitting devices, such as a packaged LED 130 depicted in FIG. 13B .
  • FIG. 12A through FIG. 13B is provided by way of example, and a variety of other embodiments are contemplated.

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  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
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US20160064626A1 (en) 2016-03-03
EP2406833A2 (fr) 2012-01-18
CN102272953B (zh) 2014-09-17
KR20110099102A (ko) 2011-09-06
WO2010057019A2 (fr) 2010-05-20
CN102272953A (zh) 2011-12-07
TWI608760B (zh) 2017-12-11
US10038123B2 (en) 2018-07-31
US9210763B2 (en) 2015-12-08
WO2010057019A3 (fr) 2010-08-19
JP2012508986A (ja) 2012-04-12
KR101647527B1 (ko) 2016-08-10
TW201026138A (en) 2010-07-01
JP2015173280A (ja) 2015-10-01
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US20130337719A1 (en) 2013-12-19
JP5745422B2 (ja) 2015-07-08

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