US20100092786A1 - Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus - Google Patents

Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus Download PDF

Info

Publication number
US20100092786A1
US20100092786A1 US12/302,873 US30287307A US2010092786A1 US 20100092786 A1 US20100092786 A1 US 20100092786A1 US 30287307 A US30287307 A US 30287307A US 2010092786 A1 US2010092786 A1 US 2010092786A1
Authority
US
United States
Prior art keywords
substrate
metal elements
bonding
iron
chromium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/302,873
Other languages
English (en)
Inventor
Jun Utsumi
Takayuki Goto
Kensuke Ide
Masahiro Funayama
Hideki Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Mitsubishi Heavy Industries Machine Tool Co Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd, National Institute of Advanced Industrial Science and Technology AIST filed Critical Mitsubishi Heavy Industries Ltd
Assigned to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, MITSUBISHI HEAVY INDUSTRIES, LTD. reassignment NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FUNAYAMA, MASAHIRO, GOTO, TAKAYUKI, IDE, KENSUKE, TAKAGI, HIDEKI, UTSUMI, JUN
Publication of US20100092786A1 publication Critical patent/US20100092786A1/en
Assigned to MITSUBISHI HEAVY INDUSTRIES MACHINE TOOL CO., LTD. reassignment MITSUBISHI HEAVY INDUSTRIES MACHINE TOOL CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MITSUBISHI HEAVY INDUSTRIES, LTD.
Abandoned legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/0008—Electrical discharge treatment, e.g. corona, plasma treatment; wave energy or particle radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/032—Gluing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Definitions

  • the present invention relates to room-temperature bonding, and in particular, relates to a device manufactured by room-temperature bonding, a manufacturing method of the device, and a room-temperature bonding apparatus therefor.
  • a MEMS (Micro Electro-Mechanical Systems) device in which minute electrical parts and mechanical parts are integrated.
  • the MEMS devices are exemplified by a micromachine, a pressure sensor, and a micro motor.
  • a wafer-level semiconductor device manufacturing process is generally employed for manufacturing of the MEMS device.
  • a plurality of devices are formed and sealed on a semiconductor wafer at one time, and the wafer is then divided into individual devices through dicing.
  • a scaling wafer is located on and bonded to a device wafer to seal and manufacture the devices.
  • a manufacturing method which uses a direct bonding method for bonding substrates.
  • the direct bonding method which does not use adhesive material and solder, another material layer is not present at a bonding interface. For this reason, there is an advantage that high bonding strength and good interface properties can be obtained.
  • anodic bonding and diffusion bonding are exemplified.
  • a bonding method in which a hydroxyl group is provided to a flattened and cleaned surface to obtain strong bonding through hydrogen bonding and heat treatment is also proposed in recent years.
  • the room-temperature bonding process was conventionally known as one of metal bonding processes, an application field of the room-temperature bonding process has been gradually developed to bonding of semiconductor materials and oxide materials in recent years.
  • the oxide material such as Al 2 O 3
  • practical bonding strength has not been obtained. For this reason, methods have been proposed which use surface treatment such as provision of an active group to bonding surfaces and heat treatment.
  • JP-P2004-054170A discloses a bonding method for laser optical crystals. Only ion beam etching is performed to a bonding surface without using an interface bonding layer of adhesive material, and then the laser optical crystals are bonded. This method has been developed as the bonding method for laser optical crystals, especially for YVO 4 crystals. This method can be applied to some of oxide materials but cannot be applied to SiO 2 material, as mentioned above. In addition, heat treatment after the bonding process causes a problem in terms of the application to the MEMS device manufacturing process.
  • JP-P2005-104810A discloses a method of bonding a functional ceramic polycrystalline body and a single crystalline semiconductor material such as Si at room temperature.
  • a metal thin film having reaction activity is formed of the semiconductor material on the surface of the ceramic polycrystalline body and the bonding is achieved through a reaction product layer generated through reaction between the metal thin film and the semiconductor material.
  • This is an effective method for bonding of a ceramic substrate with great surface roughness. Since this method presupposes reactivity between a bonding target substrate and a metal layer, target materials is restricted, and in some cases, heating treatment is required at the time of bonding.
  • JP-P2004-337927A discloses formation of a metal thin film on a bonding surface as a conventional method of bonding ionic crystal substrates which are hard to be bonded by the room-temperature bonding method.
  • An inert gas ion beam or an inert gas neutral atomic beam, and a metal ion beam or a metal neutral atom beam are radiated to the bonding surface in a vacuum, to form a metal thin film with a film thickness of 1 nm to 100 nm on a bonding surface of each substrate.
  • JP-P2004-343359A discloses a manufacturing method of a surface acoustic wave device using a room-temperature bonding method.
  • the bonding is carried out through interface bonding layers.
  • a piezoelectric single crystalline substrate such as LiTaO 2 and an Al 2 O 3 substrate or a crystalline substrate such as or Si are bonded by a surface activation process and a pressure welding process without heat treatment at a high temperature.
  • the bonding is carried out by forming the interface bonding layers of Si, insulating material and metal.
  • the formation of the interface bonding metal layer affects a physical property of a device bonding interface to possibly lose performance of a device.
  • a physical sputtering method such as an ion beam method
  • sputtering of the bonding surface advances simultaneously with the formation of the interface bonding metal layer as a radiation time becomes longer.
  • surface roughness of the bonding surface increases so that the bonding strength drops.
  • An object of the present invention is to provide a device and a manufacturing method of the device, in which substrates are bonded more strongly.
  • Another object of the present invention is to provide a device manufacturing method, in which a bonding condition of substrates of bonding difficult materials is optimized.
  • Still another object of the present invention is to provide a device and a manufacturing method of the device, in which substrates of bonding difficult materials (e.g. SiO 2 material substrates) are bonded at room-temperature to have a practical bonding strength.
  • substrates of bonding difficult materials e.g. SiO 2 material substrates
  • Yet still another object of the present invention is to provide a room-temperature bonding apparatus, in which a proper bonding condition of substrates of bonding difficult materials is optimized.
  • a device has a first substrate and a second substrate. At this time, at least one metal element is present in a bonding interface between the first substrate and the second substrate. The first substrate and the second substrate are bonded by use of the metal element by a room-temperature bonding method.
  • an interface element existence ratio of one or more metal elements should be 0.07 or above.
  • the interface element existence ratio is more preferably 0.1 or above, and still more preferably 0.2 or above.
  • the interface element existence ratio means a ratio of the number of atoms of one or more metal elements, to the entire number of atoms present in the bonding interface. More specifically, the interface element existence ratio is defined as a ratio of the number of atoms of one or more metal elements for the bonding, to a total of the number of atoms of component elements of the bonded substrates and the number of atoms of one or more metal elements in the bonding interface.
  • a part of the banding interface on the side of each of the substrates is a range from a bonding plane to the depth of 5 nm in the substrate. This value is quantitatively given by a composition analyzer used in general, such as X-ray photoelectron spectroscopy (XPS) and energy dispersive fluorescent X-ray analysis (EDX analysis) using a transmission electron microscope.
  • XPS X-ray photoelectron spectroscopy
  • EDX analysis energy dispersive fluorescent X-ray analysis
  • the plurality of metal elements are exemplified by a set of metal elements selected from the group consisting of: a set of iron and chromium, a set of iron and aluminum, a set of iron, chromium, and aluminum, a set of iron, chromium, and nickel, and a set of iron, chromium, nickel, and aluminum.
  • the metal atoms are distributed continuously or discontinuously in the bonding interface between the first substrate and the second substrate, in the form of layers, in the form of islands or in the form of layers intermittently.
  • a metal element other than the above set of metal elements may be present in the bonding interface.
  • any of tungsten W, gold Au, silver Ag, copper Cu, tantalum Ta, and zinc Zn may be contained.
  • the main component of the first substrate may be oxide, e.g. silicon dioxide.
  • the first substrate in the device of the present invention may be selected from the group of consisting of: a single crystalline material substrate, a polycrystalline material substrate, a glass substrate, a ceramics substrate, or a combination thereof.
  • the main component of the first substrate in the device of the present invention may be fluoride, carbide, or nitride. Additionally, the main component of the first substrate may be the same as that of the second substrate.
  • the device manufacturing method according to the present invention includes sputtering the surface of a first substrate, attaching at least one metal to the surface of the first substrate, and bonding the second substrate to the surface of the first substrate at room temperature. It is preferable that an interface element existence ratio of one or more metal elements should be 0.07 or above.
  • the surface of the second substrate is sputtered simultaneously with the sputtering of the surface of the first substrate. Additionally, the device manufacturing method of the present invention includes attaching at least one metal to the surface of the substrate simultaneously with the sputtering of the surface of the substrate.
  • the plurality of metal elements are exemplified by a set of metal elements selected from the group consisting of: a set of iron and chromium, a set of iron and aluminum, a set of iron, chromium, and aluminum, a set of iron, chromium, and nickel, and a set of iron, chromium, nickel, and aluminum.
  • a metal element other than the above set of metal elements may be present.
  • any of tungsten W, gold Au, silver Ag, copper Cu, tantalum Ta, and zinc Zn may be contained.
  • the surfaces of the first substrate and the second substrate are sputtered with accelerated particles being radiated.
  • at least one metal is emitted from a metal emitter, to which the accelerated particles are radiated, and is attached onto the surfaces of the substrates.
  • the metal emitter is exemplified by structural members or component parts of internal units of the bonding apparatus, or a substrate holding mechanism, a stage moving mechanism, and a substrate pressure welding mechanism.
  • an amount of atoms of each of metal elements emitted toward the surface of the substrate is properly adjusted to form an interface bonding metal layer having practical bonding strength, by controlling parameters concerning the particles which are accelerated and radiated toward the metal emitter.
  • the velocity of particles accelerated and radiated should be set such that the interface element existence ratio of one or more metal elements is 0.07 or above.
  • the velocity of radiated particles can be controlled based on an acceleration voltage applied to an ion beam source.
  • a radiation time during which the particles are radiated should be set such that the interface element existence ratio of one or more metal elements is 0.07 or above.
  • a radiation amount of particles radiated per unit time should be set such that the interface element existence ratio of the plurality of metal elements is 0.07 or above.
  • the bonding apparatus includes a vacuum chamber which produces vacuum atmosphere therein, a holding mechanism which holds substrates under the vacuum atmosphere, a positioning mechanism which transfers the substrates to given positions, a physical sputtering mechanism which activates bonding surfaces of the substrates, and a pressure welding mechanism which performs pressure welding by pressing the activated bonding surfaces to each other.
  • any of an internal wall and structural members of the vacuum chamber, and structural members and component parts of the holding mechanism, the positioning mechanism, and the pressure welding mechanism should be formed of material which emits metal particles of a plurality of metal elements in the composition when being sputtered by the physical sputtering mechanism, and the metal particles attach to the surfaces of the substrates such that an interface element existence ratio of the plurality of metal elements is 0.07 or above.
  • the metal elements are exemplified by a set of metal elements selected from the group consisting of: a set of iron and chromium, a set of iron and aluminum, a set of iron, chromium, and aluminum, a set of iron, chromium, and nickel, and a set of iron, chromium, nickel, and aluminum.
  • a metal element other than the above set of metal elements may be present.
  • any of tungsten W, gold Au, silver Ag, copper Cu, tantalum Ta, and zinc Zn may be contained.
  • FIG. 1 is a sectional view showing a room-temperature bonding apparatus according to an embodiment of the present invention
  • FIG. 2 is a sectional view showing an initial state of substrates
  • FIG. 3 is a sectional view showing a state of substrates when surfaces of the substrates are cleaned
  • FIG. 4 is a sectional view showing a state of the substrates when interface bonding layers are formed
  • FIG. 5 is a sectional view showing of the substrates when the substrates are bonded
  • FIG. 6 is a sectional view showing the state of the substrates when estimating bonding strength
  • FIG. 7 is a graph showing change in coupling energy with respect to radiation time.
  • FIG. 8 is a graph showing change in coupling energy with respect to an interface element existence ratio in a bonding interface.
  • FIG. 1 shows a room-temperature bonding apparatus 1 according to an embodiment of the present invention.
  • the room-temperature bonding apparatus 1 has a vacuum chamber 2 , an ion gun 3 , an upper stage 5 , and a lower stage 6 .
  • the vacuum chamber 2 is a chamber which secures an internal space and isolates the internal space from the surroundings.
  • a part or the whole of the vacuum chamber 2 is formed of material which emits iron Fe, aluminum Al, and chromium Cr in a composition during sputtering.
  • the material is exemplified by stainless steel which contains iron Fe and chromium Cr in the composition.
  • the vacuum chamber 2 has a lid (not shown) and is connected to a vacuum pump (not shown).
  • the vacuum pump discharges gas from the vacuum chamber 2 .
  • the vacuum pump is exemplified by a turbo-molecular pump which performs discharge as a result of flicking gas molecules by a plurality of internal metal blades.
  • the lid is used to close and open a gate connected to the vacuum chamber 2 .
  • An upper stage 5 is formed in the shape of cylindrical column and is supported to be movable in parallel in a vertical direction.
  • the upper stage 5 is formed of material which emits iron Fe, aluminum Al, and chromium Cr in a composition during the sputtering, and for example, is formed of stainless steel containing iron Fe and chromium Cr in the composition, and aluminum Al.
  • the upper stage 5 has a dielectric layer on the lower end of the column, and when a voltage is applied between the dielectric layer and a substrate 11 , and absorbs and supports the substrate 11 toward the dielectric layer with electrostatic force.
  • the upper stage 5 is connected with a pressure welding mechanism, which is not shown. The pressure welding mechanism moves the upper stage 5 in a vertical direction in the vacuum chamber 2 in accordance with a user operation.
  • a lower stage 6 is formed of material which emits iron Fe, aluminum Al, and chromium Cr in the composition during the sputtering, and is formed, for example, of stainless steel containing iron Fe and chromium Cr in the composition, and aluminum Al.
  • the lower stage 6 is connected with a stage moving mechanism, which is not shown.
  • the stage moving mechanism moves the lower stage 6 in a horizontal direction and rotationally moves the lower stage 6 around a rotation axis which is parallel to the vertical axis, in accordance with a user operation.
  • the lower stage 6 includes a substrate holder as a substrate holding mechanism formed of aluminum, for example. Additionally, the substrate holding mechanism may be provided with a dielectric layer on the upper end of the lower stage 6 , and absorb and hold the substrate 12 toward the dielectric layer with electrostatic force which is generated by applying a voltage between the dielectric layer and the substrate 12 .
  • the ion gun 3 is directed to the substrate 11 supported by the upper stage 5 and the substrate 12 supported by the lower stage 6 .
  • the ion gun 3 accelerates and emits charged particles.
  • the charged particles are exemplified by argon ions.
  • the vacuum chamber 2 may further have an electron gun, which is not shown.
  • the electron gun is positioned toward a target, to which the charged particles are emitted from the ion gun 3 , and emits electrons toward the target. Such electrons are used to electrically neutralize the target which is positively charged by the charged particles emitted by the ion gun 3 .
  • a plurality of metal atoms are emitted from a metal emitter by receiving the radiation of the charged particles.
  • the metal emitter is provided in the vacuum chamber 2 , and may be structural members of the vacuum chamber, or surface members of the substrate holding mechanism including the upper and lower stages, the substrate moving mechanism, and the pressure welding mechanism.
  • FIGS. 2 to 5 show the states of the substrate 11 and the substrate 12 when performing a room-temperature bonding process by the room-temperature bonding apparatus 1 .
  • An operator firstly opens the lid of the vacuum chamber 2 , to make the upper stage 5 hold the substrate 11 and make the lower stage 6 hold the substrate 12 .
  • the operator closes the lid of the vacuum chamber 2 and vacuums inside of the vacuum chamber 2 to a vacuum atmosphere. Then, the operator operates the stage moving mechanism of the lower stage 6 and moves the lower stage 6 in the horizontal direction such that the substrate 11 faces the substrate 12 .
  • an inactive surface layer 21 has been formed on the surface of the substrate 11 as shown in FIG. 2 .
  • the inactive surface layer 21 is composed of impurity which is attached on the substrate surface, products metamorphosed from the substrate, or a material top surface layer in which bonds are terminated with oxygen and the like to set the surface to a poor reaction activity state.
  • the inactive surface layer 22 is formed on the surface of the substrate 12 similarly in case of the substrate 11 .
  • the inactive surface layer 22 is formed from impurity attached to the surface, products metamorphosed from the substrate material, or a material top surface layer in which bonds are terminated with oxygen to set the surface to a poor reaction activity state.
  • the operator operates the ion gun 3 to emit the charged particles toward the substrates 11 and 12 which are separated enough, as shown in FIG. 3 .
  • the substrates 11 and 12 are sputtered with the charged particles so that the inactive surface layers 21 and 22 are removed.
  • the charged particles are also radiated to the metal emitter in the chamber (e.g. the vacuum chamber 2 , the upper stage 5 , and the lower stage 6 ).
  • the metal emitter is sputtered through radiation of the charged particles, and emits a plurality of component metal atoms, e.g. iron Fe, aluminum Al, and chromium Cr, into the vacuum atmosphere.
  • the operator adjusts radiation conditions of the charged particles through change of the setting of operation parameters of the ion gun 3 .
  • emitted metal atoms form an intermediate material layer on the surface of each substrate such that the interface element existence ratio takes a proper value in a range.
  • the intermediate material layers 26 are formed in the active surfaces 24 and 25 .
  • the intermediate material layers 26 are formed of elements emitted from the vacuum chamber 2 , the upper stage 5 , and the lower stage 6 , e.g. iron Fe, aluminum Al, and chromium Cr.
  • the operator operates the pressure welding mechanism such that the upper stage 5 lowers in the vertical direction and the substrate 11 and the substrate 12 come into contact with each other.
  • the substrate 11 and the substrate 12 are bonded at room temperature through the contact, and are strongly bonded into a unitary body.
  • an inter-substrate material layer 28 is formed from the intermediate material layers 26 between the substrate 11 and the substrate 12 .
  • the inter-substrate material layer 28 serves to increase bonding strength of the substrate 11 and the substrate 12 .
  • the vacuum chamber 2 is formed of stainless steel
  • the upper stage 5 and the lower stage 6 are formed of stainless steel and aluminum
  • the substrate holding mechanism is formed of aluminum.
  • the vacuum chamber 2 may be formed of aluminum.
  • the upper stage 5 and the lower stage 6 may be formed of aluminum alloy, for example.
  • the substrate holding mechanism may be formed of stainless steel.
  • the device is produced by using the room-temperature bonding apparatus 1 .
  • the operation parameters of the physical sputtering mechanism are determined, such that concentrations of elements the inter-mediate material layer formed in the bonding interface as a bonding functional material layer are within a proper range to attain practical bonding strength.
  • the operation parameters are exemplified by a voltage with which the ion gun 3 accelerates the charged particles, a time during which the ion gun 3 radiates the charged particles, and an amount of charged particles which the ion gun 3 emits (beam intensity, amount of current).
  • the operator determines the operation parameters based on a relation of the operation parameters and a measured value of the interface element existence ratio of a plurality of metal atoms present in the bonding interface, such that the interface element existence ratio of the metal elements falls within a proper range.
  • the proper range is exemplified by 0.07 or above.
  • the interface element existence ratio of the plurality of metal elements is defined as a ratio of the number of atoms of one or more metal elements involved in the bonding interface, to a total of the number of atoms of component elements of the substrates and the number of atoms of the one or more metal elements in the bonding interface. That is to say, the ratio of the numbers of atoms of one or more metal elements in the bonding interface (e.g. iron Fe, chromium Cr, and aluminum Al), to the total of the number of atoms of component elements of the substrates in the bonding interface (e.g. silicon Si and oxygen O in case of a quartz glass substrate) and the number of atoms of the one or more metal elements involved in the bonding interface (e.g. iron Fe, chromium Cr, and aluminum Al) is defined as the interface element existence ratio of one or more metal elements involved in the bonding interface.
  • a bonding interface portion on side of each substrate is a range from a bonding plane to the depth of 5 nm.
  • the interface element existence ratio can be calculated based on element concentrations in the bonding interface measured by a general analysis method.
  • the measuring method of the element concentration is exemplified by X-ray photoelectron spectroscopy (XPS).
  • XPS X-ray photoelectron spectroscopy
  • signal intensity in proportion to the number of existing atoms is measured and a composition of component elements of the substrate and metal elements is calculated from the signal intensities.
  • the interface element existence ratio of the metal elements can be calculated.
  • the operator determines the operation parameters such that the interface element existence ratio of one or more metal elements is 0.07 or above. Additionally, it is preferable that the operator should determine the operation parameters such that the interface element existence ratio is 0.1 or above.
  • the metal atoms may also be iron and chromium.
  • the metal atoms may further be iron and aluminum.
  • the metal atoms may further be iron, chromium, and nickel.
  • the metal atoms may further be iron, chromium, nickel, and aluminum.
  • the room-temperature bonding method makes it possible to perform the room-temperature bonding process of substrates formed of materials which are hard to be bonded at room temperature so as to have stronger and practical bonding strength without causing deterioration in device performance and any drop in productivity due to excessive formation of the intermediate material layer and redundancy of a process time.
  • the substrate material is exemplified by oxide, nitride, carbide, fluoride, and metal.
  • the oxide substrate is exemplified by an SiO 2 substrate and an Al 2 O 3 substrate.
  • the SiO 2 substrate is exemplified by substrates of quartz, synthetic quartz, Pyrex (registered trademark), glass, and quartz glass.
  • the Al 2 O 3 substrate is exemplified by substrates of sapphire and alumina.
  • the nitride substrate is exemplified by a silicon nitride SiN substrate and a titanium nitride TiN substrate.
  • the carbide substrate is exemplified by a silicon carbide SIC substrate and a titanium carbide TiC substrate.
  • the fluoride substrate is exemplified by a calcium fluoride CaF 2 substrate and a magnesium fluoride MgF 2 substrate.
  • the metal substrate is exemplified by a substrate of simple metal and alloy.
  • the substrate is further exemplified by substrates of an optical crystal, piezoelectric material and magneto-strictive material.
  • the optical crystal substrate is exemplified by substrates of CaCO 3 , (YVO 4 , and YAG.
  • the piezoelectric material and magneto-strictive material are exemplified by PZT.
  • the room-temperature bonding method of the present invention is applicable even when two substrates to be bonded at room temperature are formed of different materials among the above-mentioned materials, and makes it possible to bond the two substrates at room temperature more strongly without causing deterioration in device performance and a drop in productivity due to excessive formation of the intermediate material layer and redundancy of process time.
  • an interface element existence ratio of one or more metal elements present in the bonding interface can be measured.
  • the measuring method is exemplified by EDX analysis by using a transmission electron microscope.
  • the X-ray photoelectron spectroscopy (XPS) mentioned above and the EDX analysis by using the transmission electron microscope can quantitatively analyze element concentrations though the approaches are different, and there is a correlation between the results of concentration analysis derived from the respective analysis methods. Based on this correlation, it is possible to analyze and estimate an interface element existence ratio of one or more metal elements present in the bonding interface and confirm that the interface element existence ratio is within a proper range as bonding conditions.
  • Bonding strength of the substrates bonded at room temperature can be estimated by using biding energy of a bonding section.
  • the coupling energy can be estimated with a well-known blade insertion method.
  • the blade insertion method is disclosed by Maszara et al. (J. Appl. Phys. 64 (10) pp. 4943-4950 (1988)), for example.
  • FIG. 6 shows the state of substrates when coupling energy is to be measured by the blade insertion method. That is, the operator inserts a razor blade 43 in the bonding interface between a substrate 41 and a substrate 42 bonded at room temperature. At this time, the substrate 41 and the substrate 42 are separated from each other to generate a crack 44 . The operator measures an extension length of the crack 44 .
  • Coupling energy ⁇ per unit area of one surface in the bonding interface is expressed by the following equation by using the extension length L of the crack 44 , a half value y of the thickness of the razor blade 43 , and a thickness t of each of the substrates 41 and 42 , and a Young's modulus E of the substrates 41 and 42 :
  • the coupling energy ⁇ shows that bonding strength is greater and the substrates are more difficult to be separated, as the value is larger.
  • the value of the coupling energy ⁇ is 0.1 J/m 2 or above, for example.
  • the coupling energy ⁇ being 0.1 J/m 2 or above shows that the substrate 41 and the substrate 42 are bonded not to be separated when dicing of the substrate 41 and the substrate 42 is gently performed, though the bonding strength is weak.
  • the coupling energy ⁇ being 0.5 J/m 2 or above shows that the substrate 41 and the substrate 42 are bonded with practical bonding strength not to be separated when dicing of the substrate 41 and the substrate 42 is performed at high speed.
  • FIG. 7 shows a relation of coupling energy and radiation time (time for sputtering) during which the charged particles are radiated to the substrate, in bonding of substrates by the room-temperature bonding apparatus. The graph shown in FIG.
  • radiation time has a proper range (an upper limit and a lower limit).
  • FIG. 8 shows a relation of bonding strength and an interface element existence ratio in a bonding interface.
  • the interface element existence ratio x is calculated based on a result of measurement of element concentrations in the bonding interface measured from a surface of the substrate before being bonded by using the XPS.
  • the coupling energy y is generally expressed by the following equation by using the interface element existence ratio x:
  • the graph shown in FIG. 8 shows a correlation between the interface element existence ratio x and the coupling energy y.
  • the graph of FIG. 8 also shows that the coupling energy becomes 0.0 J/m 2 or above so that substrates can be bonded at room temperature, when the interface element existence ratio is 0.07 or above.
  • the graph of FIG. 8 further shows that the coupling energy reaches 0.1 J/m 2 or above, and the substrates are bonded not to be separated if dicing is gentle, when the interface element existence ratio is 0.1 or above.
  • the graph of FIG. 8 further shows that the coupling energy becomes 0.5 J/m 2 or above and the substrates are bonded not to be separated even if dicing is performed at high speed, when the interface element existence ratio is 0.2 or above.
  • a correlation is calculated without depending on a specific measuring method of measuring element concentrations in the bonding interface.
  • An interface element existence ratio calculated by other measuring methods also shows a correlation with the coupling energy y.
  • the interface element existence ratio can be calculated based on a result of measurement of element concentrations in the bonding interface of the substrates.
  • the measuring method is exemplified by the EDX analysis using a transmission electron microscope.
  • the interface element existence ratio calculated for the bonded substrates also shows a correlation with the coupling energy y in the same way.
  • a device manufactured according to the embodiment of the present invention is manufactured by the room-temperature bonding apparatus 1 .
  • the device is exemplified by a micro-machine, a pressure sensor, and a micro motor.
  • the device has two substrates to be bonded at room temperature.
  • the substrates are formed of materials which are hard to be bonded at room temperature.
  • the material is exemplified by oxide, nitride, carbide, fluoride, and metal.
  • the oxide is exemplified by SiO 2 and Al 2 O 3 .
  • the SiO 2 is exemplified by quartz, synthetic quartz, Pyrex (registered trademark), glass, and quartz glass.
  • the Al 2 O 3 is exemplified by sapphire and alumina.
  • the nitride is exemplified by silicon nitride SiN and titanium nitride TiN.
  • the carbide is exemplified by silicon carbide SiC and titanium carbide TiC.
  • the fluoride is exemplified by calcium fluoride CaF 2 and magnesium fluoride MgF 2 .
  • the metal is exemplified by simple metal and alloy.
  • the material is further exemplified by an optical crystal, and piezoelectric material and magneto-strictive material.
  • the optical crystal is exemplified by CaCO 3 , YVO 4 , and YAG.
  • the piezoelectric material and magneto-strictive material are exemplified by PZT.
  • the two substrates are formed of the same material or formed of different materials.
  • An inter-substrate material layer is formed in the bonding interface between the two substrates.
  • the inter-substrate material layer may be placed in a part of the bonding interface or placed in the entire part of the bonding interface.
  • the inter-substrate material layer may be formed of a plurality of metal elements.
  • the metal elements are exemplified by iron, aluminum, and chromium.
  • the inter-substrate material layer is formed such that the metal elements in the bonding interface have the interface element existence ratio of 0.07 or above. It can be measured by using an energy dispersive X-ray fluorescence analyzer (EDX) that the device has the inter-substrate material layer.
  • EDX energy dispersive X-ray fluorescence analyzer
  • the device according to the present invention has stronger bonding strength in the interface bonded at room temperature with an inter-substrate material layer. Additionally, it is more preferable that the inter-substrate material layer should be formed such that the metal atoms in the bonding interface have the interface element existence ratio of 0.1 or above, and it is still more preferable that the inter-substrate material layer should be formed such that the interface element existence ratio is 0.2 or above.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Thermal Sciences (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
US12/302,873 2006-05-30 2007-05-30 Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus Abandoned US20100092786A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006149896A JP4162094B2 (ja) 2006-05-30 2006-05-30 常温接合によるデバイス、デバイス製造方法ならびに常温接合装置
JP2006-149896 2006-05-30
PCT/JP2007/060993 WO2007139152A1 (ja) 2006-05-30 2007-05-30 常温接合によるデバイス、デバイス製造方法ならびに常温接合装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/060993 A-371-Of-International WO2007139152A1 (ja) 2006-05-30 2007-05-30 常温接合によるデバイス、デバイス製造方法ならびに常温接合装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US15/149,891 Division US10112376B2 (en) 2006-05-30 2016-05-09 Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus

Publications (1)

Publication Number Publication Date
US20100092786A1 true US20100092786A1 (en) 2010-04-15

Family

ID=38778670

Family Applications (2)

Application Number Title Priority Date Filing Date
US12/302,873 Abandoned US20100092786A1 (en) 2006-05-30 2007-05-30 Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus
US15/149,891 Active 2027-06-15 US10112376B2 (en) 2006-05-30 2016-05-09 Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus

Family Applications After (1)

Application Number Title Priority Date Filing Date
US15/149,891 Active 2027-06-15 US10112376B2 (en) 2006-05-30 2016-05-09 Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus

Country Status (7)

Country Link
US (2) US20100092786A1 (ja)
EP (1) EP2022594A4 (ja)
JP (1) JP4162094B2 (ja)
KR (1) KR101101896B1 (ja)
CN (1) CN101454113B (ja)
CA (1) CA2669733C (ja)
WO (1) WO2007139152A1 (ja)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120247645A1 (en) * 2009-11-30 2012-10-04 Mitsubishi Heavy Industiries, Ltd. Bonding method, bonding apparatus, and bonding system
US8601657B2 (en) 2009-11-26 2013-12-10 Murata Manufacturing Co., Ltd. Method for manufacturing piezoelectric device
US20140010494A1 (en) * 2012-07-06 2014-01-09 Roy Meade Method of forming a hermetically sealed fiber to chip connection
US20150255354A1 (en) * 2012-09-07 2015-09-10 Kyocera Corporation Composite substrate and method of manufacturing the same
US20160250838A1 (en) * 2006-05-30 2016-09-01 Mitsubishi Heavy Industries Machine Tool Co., Ltd. Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus
US9601350B2 (en) 2011-01-31 2017-03-21 Bondtech Co., Ltd. Bonding-substrate fabrication method, bonding substrate, substrate bonding method, bonding-substrate fabrication apparatus, and substrate assembly
US9812345B2 (en) 2013-02-19 2017-11-07 Ngk Insulators, Ltd. Composite substrate, semiconductor device, and method for manufacturing semiconductor device
US9870922B2 (en) 2014-04-25 2018-01-16 Tadatomo Suga Substrate bonding apparatus and substrate bonding method
US9962908B2 (en) * 2012-04-10 2018-05-08 Lan Technical Service Co., Ltd. Method for bonding polymer film and polymer film, method for bonding polymer film and inorganic material substrate, polymer film laminate, and laminate of polymer film and inorganic material substrate
US10166749B2 (en) 2011-01-31 2019-01-01 Lan Technical Service Co., Ltd. Bonding-substrate fabrication method, bonding substrate, substrate bonding method, bonding-substrate fabrication apparatus, and substrate assembly
US20190047065A1 (en) * 2016-07-05 2019-02-14 Shenzhen Xpectvision Technology Co., Ltd. Bonding materials of dissimilar coefficients of thermal expansion
US10367324B2 (en) * 2016-10-28 2019-07-30 Inter-University Research Institute Corporation National Institutes Of Natural Sciences Laser component
US10486263B2 (en) 2014-12-22 2019-11-26 Mitsubishi Heavy Industries Machine Tool Co., Ltd. Room-temperature-bonded semiconductor device and manufacturing method of room-temperature-bonded semiconductor device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100991557B1 (ko) 2008-07-10 2010-11-04 이혜숙 이종 소재 용접 방법과 이를 이용한 플런저 제조 방법 및그 플런저
JP5177015B2 (ja) 2009-02-27 2013-04-03 富士通株式会社 パッケージドデバイスおよびパッケージドデバイス製造方法
JP4801752B2 (ja) * 2009-02-27 2011-10-26 三菱重工業株式会社 ウェハ接合装置およびウェハ接合方法
JP5535610B2 (ja) * 2009-12-22 2014-07-02 三菱重工業株式会社 Ｓｏｉ半導体基板製造方法
KR20120052160A (ko) * 2010-11-15 2012-05-23 엔지케이 인슐레이터 엘티디 복합 기판 및 복합 기판의 제조 방법
US9496279B2 (en) 2012-02-29 2016-11-15 Kyocera Corporation Composite substrate
WO2014038693A1 (ja) 2012-09-07 2014-03-13 京セラ株式会社 デバイスの製造方法
JP5926401B2 (ja) * 2013-05-31 2016-05-25 京セラ株式会社 複合基板およびその製造方法
WO2015046483A1 (ja) * 2013-09-30 2015-04-02 京セラ株式会社 複合基板およびその製造方法
JP6515515B2 (ja) * 2014-12-11 2019-05-22 日亜化学工業株式会社 発光装置の製造法
JPWO2018110316A1 (ja) * 2016-12-13 2019-10-24 日本碍子株式会社 光学部品

Citations (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678570A (en) * 1971-04-01 1972-07-25 United Aircraft Corp Diffusion bonding utilizing transient liquid phase
US4005988A (en) * 1975-12-19 1977-02-01 United Technologies Corporation Interlayer for transient liquid phase diffusion bonding
US4008844A (en) * 1975-01-06 1977-02-22 United Technologies Corporation Method of repairing surface defects using metallic filler material
US4011982A (en) * 1975-09-15 1977-03-15 Airco, Inc. Surface joining by bonding of metal and deposited metal
US4038041A (en) * 1975-12-19 1977-07-26 United Technologies Corporation Composite interlayer for diffusion bonding
US4245768A (en) * 1978-07-28 1981-01-20 The Unites States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of cold welding using ion beam technology
US4349954A (en) * 1980-11-26 1982-09-21 The United States Of America As Represented By The United States National Aeronautics And Space Administration Mechanical bonding of metal method
US4452389A (en) * 1982-04-05 1984-06-05 The Bendix Corporation Method for welding with the help of ion implantation
US4700881A (en) * 1984-12-20 1987-10-20 United Technologies Corporation Multiple foil transient liquid phase bonding
US4749118A (en) * 1986-02-03 1988-06-07 Hitachi, Ltd. Method for bonding ceramic to metal
US4988035A (en) * 1987-02-10 1991-01-29 Nippon Kokan Kabushiki Kaisha Method of liquid phase diffusion bonding of metal bodies
US5083104A (en) * 1990-04-04 1992-01-21 Schrack Electronica Ltda. Miniature relay
US5089104A (en) * 1989-12-04 1992-02-18 Hitachi, Ltd. Method and apparatus for forming a multiple-element thin film based on ion beam sputtering
US5148958A (en) * 1991-12-23 1992-09-22 Xerox Corporation Thin film vacuum cold welding system
US5234152A (en) * 1992-01-07 1993-08-10 Regents Of The University Of California Transient liquid phase ceramic bonding
US5372298A (en) * 1992-01-07 1994-12-13 The Regents Of The University Of California Transient liquid phase ceramic bonding
US5466355A (en) * 1993-07-15 1995-11-14 Japan Energy Corporation Mosaic target
US5543019A (en) * 1993-04-23 1996-08-06 Etex Corporation Method of coating medical devices and device coated thereby
US5549237A (en) * 1995-02-16 1996-08-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Apparatus and method for cold welding thin wafers to hard substrates
US5741404A (en) * 1996-05-24 1998-04-21 Micron Technology, Inc. Multi-planar angulated sputtering target and method of use for filling openings
US5853622A (en) * 1990-02-09 1998-12-29 Ormet Corporation Transient liquid phase sintering conductive adhesives
US5922397A (en) * 1997-03-03 1999-07-13 Ormet Corporation Metal-plating of cured and sintered transient liquid phase sintering pastes
US5967402A (en) * 1997-03-25 1999-10-19 Honda Giken Kogyo Kabushiki Kaisha Method for joining members at ordinary temperature
US6106960A (en) * 1995-02-09 2000-08-22 Ngk Insulators, Ltd. Joined articles, corrosion-resistant joining materials and process for producing joined articles
US6199748B1 (en) * 1999-08-20 2001-03-13 Nova Crystals, Inc. Semiconductor eutectic alloy metal (SEAM) technology for fabrication of compliant composite substrates and integration of materials
US6224718B1 (en) * 1999-07-14 2001-05-01 Veeco Instruments, Inc. Target assembly for ion beam sputter deposition with multiple paddles each having targets on both sides
US6315188B1 (en) * 2000-06-28 2001-11-13 Sandia Corporation Surface preparation for high purity alumina ceramics enabling direct brazing in hydrogen atmospheres
US20010045352A1 (en) * 1998-05-14 2001-11-29 Robinson Raymond S. Sputter deposition using multiple targets
US6402900B1 (en) * 2001-03-16 2002-06-11 4 Wave, Inc. System and method for performing sputter deposition using ion sources, targets and a substrate arranged about the faces of a cube
US6413589B1 (en) * 1988-11-29 2002-07-02 Chou H. Li Ceramic coating method
US20030168145A1 (en) * 2000-08-18 2003-09-11 Tadatomo Suga Method and apparatus for mounting
US20040050912A1 (en) * 2002-09-13 2004-03-18 Spencer William R. Diffusion bonding process of two-phase metal alloys
US6783637B2 (en) * 2002-10-31 2004-08-31 Freescale Semiconductor, Inc. High throughput dual ion beam deposition apparatus
US20040226162A1 (en) * 2003-05-14 2004-11-18 Fujitsu Media Devices Limited Method and manufacturing surface acoustic wave device
US20050229737A1 (en) * 2004-04-06 2005-10-20 Mitsubishi Heavy Industries, Ltd. Manufacturing system for microstructure
US20060140829A1 (en) * 2004-12-28 2006-06-29 Fuji Xerox Co., Ltd. Microstructure, microreactor, micro heat exchanger and method for fabricating microstructure
US20060249372A1 (en) * 2005-04-11 2006-11-09 Intematix Corporation Biased target ion bean deposition (BTIBD) for the production of combinatorial materials libraries
US20060283917A1 (en) * 2003-04-09 2006-12-21 The Regents Of The University Of California Method of soldering or brazing articles having surfaces that are difficult to bond
US7165712B2 (en) * 2003-10-23 2007-01-23 Siemens Power Generation, Inc. Transient liquid phase bonding to cold-worked surfaces
US7565996B2 (en) * 2004-10-04 2009-07-28 United Technologies Corp. Transient liquid phase bonding using sandwich interlayers
US8803001B2 (en) * 2011-06-21 2014-08-12 Toyota Motor Engineering & Manufacturing North America, Inc. Bonding area design for transient liquid phase bonding process

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54124853A (en) 1978-03-23 1979-09-28 Hiroyasu Funakubo Press contacting method and apparatus of minute metal strain
US4309267A (en) * 1980-07-21 1982-01-05 Bell Telephone Laboratories, Incorporated Reactive sputter etching apparatus
JPS6167581A (ja) * 1984-09-07 1986-04-07 Nippon Steel Corp アルミニウム被覆鋼板の製造方法
DE3511141A1 (de) * 1985-03-27 1986-10-23 Siemens AG, 1000 Berlin und 8000 München Ionenstrahl-materialbearbeitungsanlage mit neutralisationseinrichtung
US4673475A (en) * 1985-06-28 1987-06-16 The Standard Oil Company Dual ion beam deposition of dense films
JPH0638989B2 (ja) 1986-05-29 1994-05-25 三菱電機株式会社 固相接合装置
JPS63101085A (ja) 1986-10-16 1988-05-06 Fuji Electric Co Ltd 拡散接合方法
JPS6473075A (en) * 1987-09-14 1989-03-17 Hitachi Ltd Film forming device by ion beam sputtering
JPH0381077A (ja) 1989-08-25 1991-04-05 Hoya Corp 部品の接合方法及び装置
JP2519578B2 (ja) * 1990-06-11 1996-07-31 東洋鋼鈑株式会社 金属部材とセラミックス或はサ―メット部材の接合方法
US5279724A (en) * 1991-12-26 1994-01-18 Xerox Corporation Dual sputtering source
US5322606A (en) * 1991-12-26 1994-06-21 Xerox Corporation Use of rotary solenoid as a shutter actuator on a rotating arm
JPH05274635A (ja) * 1992-03-25 1993-10-22 Hitachi Ltd 磁気ディスク用スライダの加工方法
US5234149A (en) * 1992-08-28 1993-08-10 At&T Bell Laboratories Debondable metallic bonding method
JPH0699317A (ja) 1992-09-08 1994-04-12 Hitachi Ltd 接合方法
US5279866A (en) * 1993-06-10 1994-01-18 Applied Science And Technology Inc. Process for depositing wear-resistant coatings
JPH089108B2 (ja) * 1993-09-29 1996-01-31 科学技術庁金属材料技術研究所長 接合方法
JP3316320B2 (ja) 1994-10-18 2002-08-19 三菱重工業株式会社 常温接合装置
JP3624990B2 (ja) 1995-03-17 2005-03-02 株式会社荏原製作所 微小物の接合方法
JPH0910963A (ja) * 1995-06-27 1997-01-14 Mitsubishi Heavy Ind Ltd 常温接合方法
EP0808915A3 (en) * 1996-05-23 1998-08-05 Applied Materials, Inc. Chemical vapor deposition and sputtering method and apparatus
JP2791429B2 (ja) 1996-09-18 1998-08-27 工業技術院長 シリコンウェハーの常温接合法
JPH11203724A (ja) * 1998-01-09 1999-07-30 Sony Corp 光ディスク及びその製造方法
JP3315919B2 (ja) * 1998-02-18 2002-08-19 日本碍子株式会社 ２種類以上の異種部材よりなる複合部材を製造する方法
US6335534B1 (en) * 1998-04-17 2002-01-01 Kabushiki Kaisha Toshiba Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
US6843891B2 (en) * 1998-05-14 2005-01-18 Kaufman & Robinson, Inc. Apparatus for sputter deposition
JP2001202614A (ja) * 2000-01-18 2001-07-27 Toray Ind Inc 磁気記録媒体
US6991856B2 (en) * 2000-05-02 2006-01-31 Johns Hopkins University Methods of making and using freestanding reactive multilayer foils
IL152517A0 (en) * 2000-05-02 2003-05-29 Univ Johns Hopkins Method of making reactive multilayer foil and resulting product
JP2002064268A (ja) * 2000-08-18 2002-02-28 Toray Eng Co Ltd 実装方法および装置
JP4669600B2 (ja) * 2000-08-18 2011-04-13 東レエンジニアリング株式会社 実装装置
EP1322444A4 (en) * 2000-09-11 2008-01-23 Tosoh Smd Inc METHOD FOR MANUFACTURING CATHODIC SPUTTER TARGETS WITH INTERNAL COOLING CHANNELS
JP3905301B2 (ja) * 2000-10-31 2007-04-18 日鉱金属株式会社 タンタル又はタングステンターゲット−銅合金製バッキングプレート組立体及びその製造方法
JP2003318217A (ja) * 2001-06-20 2003-11-07 Toray Eng Co Ltd 実装方法および装置
KR100995196B1 (ko) * 2001-08-02 2010-11-17 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟, 투명 전도막 및 이들의 제조방법
US20080061114A1 (en) * 2001-09-02 2008-03-13 Zara Taliashvili Method for the fabrication of low temperature vacuum sealed bonds using diffusion welding
JP2003318219A (ja) 2002-02-22 2003-11-07 Toray Eng Co Ltd 実装方法および装置
JP4374415B2 (ja) 2002-07-24 2009-12-02 独立行政法人 日本原子力研究開発機構 イオンビームエッチングを用いたレーザー光学結晶の接合法
JP2004119430A (ja) * 2002-09-24 2004-04-15 Tadatomo Suga 接合装置および方法
US6877651B2 (en) * 2002-12-02 2005-04-12 Thomas A. Sandin Method of joining ceramic or graphite to metal with an alloy having high nickel or cobalt content, alloys for joining the same, and products formed therewith
US6962835B2 (en) * 2003-02-07 2005-11-08 Ziptronix, Inc. Method for room temperature metal direct bonding
JP2006521224A (ja) * 2003-02-20 2006-09-21 ナムローゼ・フェンノートシャップ・ベーカート・ソシエテ・アノニム 積層構造体の製造方法
JP3848989B2 (ja) * 2003-05-15 2006-11-22 唯知 須賀 基板接合方法および基板接合装置
JP4315774B2 (ja) 2003-10-02 2009-08-19 日立金属株式会社 異種材料複合体およびその製造方法
US7426900B2 (en) * 2003-11-19 2008-09-23 Tokyo Electron Limited Integrated electrostatic inductive coupling for plasma processing
WO2005071735A1 (ja) * 2004-01-22 2005-08-04 Bondtech Inc. 接合方法及びこの方法により作成されるデバイス並びに接合装置
WO2005097396A1 (ja) 2004-04-08 2005-10-20 Matsushita Electric Industrial Co., Ltd. 接合方法及びその装置
US20050241669A1 (en) * 2004-04-29 2005-11-03 Tokyo Electron Limited Method and system of dry cleaning a processing chamber
US7554775B2 (en) * 2005-02-28 2009-06-30 Hitachi Global Storage Technologies Netherlands B.V. GMR sensors with strongly pinning and pinned layers
US7354659B2 (en) * 2005-03-30 2008-04-08 Reactive Nanotechnologies, Inc. Method for fabricating large dimension bonds using reactive multilayer joining
EP1759722B1 (de) * 2005-09-01 2009-11-11 Straumann Holding AG Beschichtung von Teilen aus Titan oder einer Titan-Legierung zur Verhinderung von Kaltverschweissung
US20070235500A1 (en) * 2006-03-31 2007-10-11 Daewoong Suh Room temperature joining process with piezoelectric ceramic-activated reactive multilayer foil
JP4162094B2 (ja) * 2006-05-30 2008-10-08 三菱重工業株式会社 常温接合によるデバイス、デバイス製造方法ならびに常温接合装置
US20090186195A1 (en) * 2006-09-08 2009-07-23 Reactive Nanotechnologies, Inc. Reactive Multilayer Joining With Improved Metallization Techniques
US8020748B2 (en) * 2006-09-12 2011-09-20 Toso SMD, Inc. Sputtering target assembly and method of making same
US8784729B2 (en) * 2007-01-16 2014-07-22 H.C. Starck Inc. High density refractory metals and alloys sputtering targets
US20080210555A1 (en) * 2007-03-01 2008-09-04 Heraeus Inc. High density ceramic and cermet sputtering targets by microwave sintering
US20080314735A1 (en) * 2007-06-22 2008-12-25 Weihs Timothy P Reactive Multilayer Joining To Control Thermal Stress
US8592786B2 (en) * 2012-03-23 2013-11-26 Varian Semiconductor Equipment Associates, Inc. Platen clamping surface monitoring
US10731246B2 (en) * 2014-07-28 2020-08-04 Gatan, Inc. Ion beam sample preparation and coating apparatus and methods
US11004656B2 (en) * 2014-10-15 2021-05-11 Gatan, Inc. Methods and apparatus for determining, using, and indicating ion beam working properties
WO2017196622A2 (en) * 2016-05-11 2017-11-16 Veeco Instruments Inc. Ion beam materials processing system with grid short clearing system for gridded ion beam source

Patent Citations (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678570A (en) * 1971-04-01 1972-07-25 United Aircraft Corp Diffusion bonding utilizing transient liquid phase
US4008844A (en) * 1975-01-06 1977-02-22 United Technologies Corporation Method of repairing surface defects using metallic filler material
US4011982A (en) * 1975-09-15 1977-03-15 Airco, Inc. Surface joining by bonding of metal and deposited metal
US4005988A (en) * 1975-12-19 1977-02-01 United Technologies Corporation Interlayer for transient liquid phase diffusion bonding
US4038041A (en) * 1975-12-19 1977-07-26 United Technologies Corporation Composite interlayer for diffusion bonding
US4245768A (en) * 1978-07-28 1981-01-20 The Unites States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of cold welding using ion beam technology
US4349954A (en) * 1980-11-26 1982-09-21 The United States Of America As Represented By The United States National Aeronautics And Space Administration Mechanical bonding of metal method
US4452389A (en) * 1982-04-05 1984-06-05 The Bendix Corporation Method for welding with the help of ion implantation
US4700881A (en) * 1984-12-20 1987-10-20 United Technologies Corporation Multiple foil transient liquid phase bonding
US4749118A (en) * 1986-02-03 1988-06-07 Hitachi, Ltd. Method for bonding ceramic to metal
US4988035A (en) * 1987-02-10 1991-01-29 Nippon Kokan Kabushiki Kaisha Method of liquid phase diffusion bonding of metal bodies
US6413589B1 (en) * 1988-11-29 2002-07-02 Chou H. Li Ceramic coating method
US5089104A (en) * 1989-12-04 1992-02-18 Hitachi, Ltd. Method and apparatus for forming a multiple-element thin film based on ion beam sputtering
US5853622A (en) * 1990-02-09 1998-12-29 Ormet Corporation Transient liquid phase sintering conductive adhesives
US5083104A (en) * 1990-04-04 1992-01-21 Schrack Electronica Ltda. Miniature relay
US5148958A (en) * 1991-12-23 1992-09-22 Xerox Corporation Thin film vacuum cold welding system
US5234152A (en) * 1992-01-07 1993-08-10 Regents Of The University Of California Transient liquid phase ceramic bonding
US5372298A (en) * 1992-01-07 1994-12-13 The Regents Of The University Of California Transient liquid phase ceramic bonding
US5543019A (en) * 1993-04-23 1996-08-06 Etex Corporation Method of coating medical devices and device coated thereby
US5466355A (en) * 1993-07-15 1995-11-14 Japan Energy Corporation Mosaic target
US6106960A (en) * 1995-02-09 2000-08-22 Ngk Insulators, Ltd. Joined articles, corrosion-resistant joining materials and process for producing joined articles
US5549237A (en) * 1995-02-16 1996-08-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Apparatus and method for cold welding thin wafers to hard substrates
US5741404A (en) * 1996-05-24 1998-04-21 Micron Technology, Inc. Multi-planar angulated sputtering target and method of use for filling openings
US5922397A (en) * 1997-03-03 1999-07-13 Ormet Corporation Metal-plating of cured and sintered transient liquid phase sintering pastes
US5967402A (en) * 1997-03-25 1999-10-19 Honda Giken Kogyo Kabushiki Kaisha Method for joining members at ordinary temperature
US20010045352A1 (en) * 1998-05-14 2001-11-29 Robinson Raymond S. Sputter deposition using multiple targets
US6224718B1 (en) * 1999-07-14 2001-05-01 Veeco Instruments, Inc. Target assembly for ion beam sputter deposition with multiple paddles each having targets on both sides
US6199748B1 (en) * 1999-08-20 2001-03-13 Nova Crystals, Inc. Semiconductor eutectic alloy metal (SEAM) technology for fabrication of compliant composite substrates and integration of materials
US6315188B1 (en) * 2000-06-28 2001-11-13 Sandia Corporation Surface preparation for high purity alumina ceramics enabling direct brazing in hydrogen atmospheres
US20030168145A1 (en) * 2000-08-18 2003-09-11 Tadatomo Suga Method and apparatus for mounting
US6402900B1 (en) * 2001-03-16 2002-06-11 4 Wave, Inc. System and method for performing sputter deposition using ion sources, targets and a substrate arranged about the faces of a cube
US20040050912A1 (en) * 2002-09-13 2004-03-18 Spencer William R. Diffusion bonding process of two-phase metal alloys
US6783637B2 (en) * 2002-10-31 2004-08-31 Freescale Semiconductor, Inc. High throughput dual ion beam deposition apparatus
US20060283917A1 (en) * 2003-04-09 2006-12-21 The Regents Of The University Of California Method of soldering or brazing articles having surfaces that are difficult to bond
US20040226162A1 (en) * 2003-05-14 2004-11-18 Fujitsu Media Devices Limited Method and manufacturing surface acoustic wave device
US7331092B2 (en) * 2003-05-14 2008-02-19 Fujitsu Media Devices Limited Method and manufacturing surface acoustic wave device
US7165712B2 (en) * 2003-10-23 2007-01-23 Siemens Power Generation, Inc. Transient liquid phase bonding to cold-worked surfaces
US20050229737A1 (en) * 2004-04-06 2005-10-20 Mitsubishi Heavy Industries, Ltd. Manufacturing system for microstructure
US7565996B2 (en) * 2004-10-04 2009-07-28 United Technologies Corp. Transient liquid phase bonding using sandwich interlayers
US20060140829A1 (en) * 2004-12-28 2006-06-29 Fuji Xerox Co., Ltd. Microstructure, microreactor, micro heat exchanger and method for fabricating microstructure
US7632470B2 (en) * 2004-12-28 2009-12-15 Fuji Xerox Co., Ltd. Microstructure, microreactor, micro heat exchanger and method for fabricating microstructure
US20060249372A1 (en) * 2005-04-11 2006-11-09 Intematix Corporation Biased target ion bean deposition (BTIBD) for the production of combinatorial materials libraries
US8803001B2 (en) * 2011-06-21 2014-08-12 Toyota Motor Engineering & Manufacturing North America, Inc. Bonding area design for transient liquid phase bonding process

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
English Translation of JP 2004-337927 retrieved from the EPO website on June 26, 2014. *

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10112376B2 (en) * 2006-05-30 2018-10-30 Mitsubishi Heavy Industries Machine Tool, Co., Ltd. Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus
US20160250838A1 (en) * 2006-05-30 2016-09-01 Mitsubishi Heavy Industries Machine Tool Co., Ltd. Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus
US8601657B2 (en) 2009-11-26 2013-12-10 Murata Manufacturing Co., Ltd. Method for manufacturing piezoelectric device
US20120247645A1 (en) * 2009-11-30 2012-10-04 Mitsubishi Heavy Industiries, Ltd. Bonding method, bonding apparatus, and bonding system
US9601350B2 (en) 2011-01-31 2017-03-21 Bondtech Co., Ltd. Bonding-substrate fabrication method, bonding substrate, substrate bonding method, bonding-substrate fabrication apparatus, and substrate assembly
US10166749B2 (en) 2011-01-31 2019-01-01 Lan Technical Service Co., Ltd. Bonding-substrate fabrication method, bonding substrate, substrate bonding method, bonding-substrate fabrication apparatus, and substrate assembly
US9962908B2 (en) * 2012-04-10 2018-05-08 Lan Technical Service Co., Ltd. Method for bonding polymer film and polymer film, method for bonding polymer film and inorganic material substrate, polymer film laminate, and laminate of polymer film and inorganic material substrate
US9804350B2 (en) * 2012-07-06 2017-10-31 Micron Technology, Inc. Method of forming a hermetically sealed fiber to chip connections
US20160216465A1 (en) * 2012-07-06 2016-07-28 Micron Technology, Inc. Method of forming a hermetically sealed fiber to chip connections
US11536915B2 (en) 2012-07-06 2022-12-27 Micron Technology, Inc. Methods and systems for hermetically sealed fiber to chip connections
US10935739B2 (en) 2012-07-06 2021-03-02 Micron Technology, Inc. Methods and systems for hermetically sealed fiber to chip connections
US9329336B2 (en) * 2012-07-06 2016-05-03 Micron Technology, Inc. Method of forming a hermetically sealed fiber to chip connection
US20140010494A1 (en) * 2012-07-06 2014-01-09 Roy Meade Method of forming a hermetically sealed fiber to chip connection
US9711418B2 (en) * 2012-09-07 2017-07-18 Kyocera Corporation Composite substrate with a high-performance semiconductor layer and method of manufacturing the same
US20150255354A1 (en) * 2012-09-07 2015-09-10 Kyocera Corporation Composite substrate and method of manufacturing the same
US9911639B2 (en) 2013-02-19 2018-03-06 Ngk Insulators, Ltd. Composite substrate, elastic wave device, and method for producing elastic wave device
US10629470B2 (en) 2013-02-19 2020-04-21 Ngk Insulators, Ltd. Composite substrate, elastic wave device, and method for producing elastic wave device
US9812345B2 (en) 2013-02-19 2017-11-07 Ngk Insulators, Ltd. Composite substrate, semiconductor device, and method for manufacturing semiconductor device
US10204785B2 (en) 2014-04-25 2019-02-12 Tadatomo Suga Substrate bonding apparatus and substrate bonding method
US9870922B2 (en) 2014-04-25 2018-01-16 Tadatomo Suga Substrate bonding apparatus and substrate bonding method
US10486263B2 (en) 2014-12-22 2019-11-26 Mitsubishi Heavy Industries Machine Tool Co., Ltd. Room-temperature-bonded semiconductor device and manufacturing method of room-temperature-bonded semiconductor device
US20190047065A1 (en) * 2016-07-05 2019-02-14 Shenzhen Xpectvision Technology Co., Ltd. Bonding materials of dissimilar coefficients of thermal expansion
US10518346B2 (en) * 2016-07-05 2019-12-31 Shenzhen Xpectvision Technology Co., Ltd. Bonding materials of dissimilar coefficients of thermal expansion
US10367324B2 (en) * 2016-10-28 2019-07-30 Inter-University Research Institute Corporation National Institutes Of Natural Sciences Laser component

Also Published As

Publication number Publication date
EP2022594A4 (en) 2017-03-08
CA2669733A1 (en) 2007-12-06
US10112376B2 (en) 2018-10-30
KR101101896B1 (ko) 2012-01-02
US20160250838A1 (en) 2016-09-01
JP2007324195A (ja) 2007-12-13
WO2007139152A1 (ja) 2007-12-06
KR20090015943A (ko) 2009-02-12
CN101454113B (zh) 2013-05-08
EP2022594A1 (en) 2009-02-11
CA2669733C (en) 2014-10-14
JP4162094B2 (ja) 2008-10-08
CN101454113A (zh) 2009-06-10

Similar Documents

Publication Publication Date Title
US10112376B2 (en) Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus
US6923625B2 (en) Method of forming a reactive material and article formed thereby
US20190036009A1 (en) Bonding method
US6034405A (en) Bonding of aluminum oxide components to silicons substrates
US6085966A (en) Sputtering target assembly production method
JP4353669B2 (ja) バッキングプレートへのターゲットのボンディング方法
KR101240063B1 (ko) 디바이스 및 디바이스 제조 방법
JP5571988B2 (ja) 接合方法
US20120115305A1 (en) Method and structure for wafer to wafer bonding in semiconductor packaging
US20090001537A1 (en) Gettering material for encapsulated microdevices and method of manufacture
JP5704619B2 (ja) 電子素子の封止方法及び基板接合体
US20210067129A1 (en) Joined body of piezoelectric material substrate and support substrate
KR102218934B1 (ko) 접합체
JP6318441B2 (ja) 接合方法
KR102218935B1 (ko) 접합체 및 탄성파 소자
JP2009100075A (ja) 圧電振動子の製造方法
JP7420922B2 (ja) 接合基板
EP0895111A1 (en) Bonding of aluminum oxide components to silicon substrates
US11791795B2 (en) Bonded body of piezoelectric material substrate and supporting substrate
JPH09145510A (ja) 半導体式力学量センサおよびその製造方法
JP2008071907A (ja) 半導体チップの製造方法、及び半導体チップ
Li et al. Irregular characteristics of bond interface formation in ultrasonic wire wedge bonding
Wei et al. Nano-film assisted anodic bonding
Menzel et al. Fabrication of surface acoustic wave structures with buried copper IDTs using the copper damascene process
Abouie Investigation of Eutectic and Solid State Wafer Bonding of Silicon with Gold

Legal Events

Date Code Title Description
AS Assignment

Owner name: MITSUBISHI HEAVY INDUSTRIES, LTD.,JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:UTSUMI, JUN;GOTO, TAKAYUKI;IDE, KENSUKE;AND OTHERS;REEL/FRAME:022972/0713

Effective date: 20081222

Owner name: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:UTSUMI, JUN;GOTO, TAKAYUKI;IDE, KENSUKE;AND OTHERS;REEL/FRAME:022972/0713

Effective date: 20081222

AS Assignment

Owner name: MITSUBISHI HEAVY INDUSTRIES MACHINE TOOL CO., LTD.

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MITSUBISHI HEAVY INDUSTRIES, LTD.;REEL/FRAME:038160/0628

Effective date: 20160328

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION