US20100032146A1 - Method and arrangement for heat treatment of substrates - Google Patents

Method and arrangement for heat treatment of substrates Download PDF

Info

Publication number
US20100032146A1
US20100032146A1 US12/515,067 US51506707A US2010032146A1 US 20100032146 A1 US20100032146 A1 US 20100032146A1 US 51506707 A US51506707 A US 51506707A US 2010032146 A1 US2010032146 A1 US 2010032146A1
Authority
US
United States
Prior art keywords
cooling
medium
heating
heating plate
thermal conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/515,067
Other languages
English (en)
Inventor
Robert Michael Hartung
Hans Ulrich Voller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centrotherm Thermal Solutions GmbH and Co KG
Original Assignee
Centrotherm Thermal Solutions GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Thermal Solutions GmbH and Co KG filed Critical Centrotherm Thermal Solutions GmbH and Co KG
Assigned to CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG reassignment CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HARTUNG, ROBERT MICHAEL, VOLLER, HANS ULRICH
Publication of US20100032146A1 publication Critical patent/US20100032146A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F1/00—Tubular elements; Assemblies of tubular elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F1/00—Tubular elements; Assemblies of tubular elements
    • F28F1/10—Tubular elements and assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with projections, with recesses
    • F28F1/12—Tubular elements and assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with projections, with recesses the means being only outside the tubular element
    • F28F1/14—Tubular elements and assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with projections, with recesses the means being only outside the tubular element and extending longitudinally
    • F28F1/22—Tubular elements and assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with projections, with recesses the means being only outside the tubular element and extending longitudinally the means having portions engaging further tubular elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F27/00—Control arrangements or safety devices specially adapted for heat-exchange or heat-transfer apparatus
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F9/00—Casings; Header boxes; Auxiliary supports for elements; Auxiliary members within casings
    • F28F9/02—Header boxes; End plates
    • F28F9/026—Header boxes; End plates with static flow control means, e.g. with means for uniformly distributing heat exchange media into conduits
    • F28F9/0263—Header boxes; End plates with static flow control means, e.g. with means for uniformly distributing heat exchange media into conduits by varying the geometry or cross-section of header box
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F9/00—Casings; Header boxes; Auxiliary supports for elements; Auxiliary members within casings
    • F28F9/02—Header boxes; End plates
    • F28F9/026—Header boxes; End plates with static flow control means, e.g. with means for uniformly distributing heat exchange media into conduits
    • F28F9/0265—Header boxes; End plates with static flow control means, e.g. with means for uniformly distributing heat exchange media into conduits by using guiding means or impingement means inside the header box
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Definitions

  • the invention concerns a method for thermal treatment of substrates, as well as an arrangement for execution of the method.
  • RTP rapid thermal processes
  • substrates for example, semiconductor wafers, solar cells, equipped circuit boards, etc.
  • processes with rapid temperature changes i.e., processes with rapid temperature changes, in order to impart certain properties to the treated materials or to control soldering processes or quite simply to drastically shorten the duration of the thermal processes.
  • Heating ordinarily occurs by radiation heating and/or a cooling/heating plate on which the substrates being treated lie or are arranged at limited, optionally variable spacing above it.
  • cooling/heating plates 1 consisting of brass, aluminum, stainless steel, gray cast iron, etc.
  • a cooling tube 2 which is passed through meander-like ( FIG. 1 , prior art) and through which compressed air or water flows.
  • the cooling tube 2 is provided with a connection 3 for water supply and a connection 4 for water discharge.
  • a cooling rate of up to 5 K/min can be achieved with compressed air and a cooling rate of >20 K/min with water.
  • a method and an apparatus for heat treatment of wafer-like substrates is apparent from DE 102 60 672 A1, in which a heating/cooling plate traversed by a fluid is provided to heat and cool and a substrate. The corresponding fluid can then be held statically within the heating/cooling plate or continuously passed through it, specifically for cooling of the heating/cooling plate, as required.
  • a range of temperature change of 15 K/min lies between cooling with pure air and cooling with water. This results in the problem that stepless cooling with ramp rates in the range from ⁇ 1 to ⁇ 100 K/min cannot be achieved. Moreover, the meandering passage of the cooling tubes through the cooling/heating plate does not provide acceptable homogeneity of the temperature distribution on the surface of the plate even with respect to higher soldering temperatures above 450° C. A temperature homogeneity of 150 K over the plate at 650 K is reached during meander cooling.
  • the task underlying the invention is solved according to the method in that two media of different thermal conductivity are simultaneously passed through a cooling/heating plate so that a first medium of higher thermal conductivity is fully enclosed during flow through the cooling/heating plate by at least a second medium of lower thermal conductivity.
  • the attainable upper temperature is naturally dependent on the first medium, whereas when the cooling/heating plate is used as a cooling plate it can be cooled down from much higher temperatures, as occur, for example, during soldering processes.
  • the flow rate and direction of both media through the cooling/heating plate can be adjusted independently of each other so that ramp rates in the range from ⁇ 1 to ⁇ 100 K/min are attainable in fine steps.
  • the first medium of higher thermal conductivity is a liquid, preferably water
  • the second medium of lower thermal conductivity is a gas, preferably air.
  • the first medium is either cooled or heated as required for introduction to the cooling/heating plate.
  • Another embodiment of the invention is characterized by the fact that the cooling or heating power is controlled in stepless fashion from the minimum to the attainable maximum by volume control of the second medium.
  • the first medium is passed continuously or in pulses through the cooling/heating plate.
  • the second medium is at least temporarily replaced by the first medium.
  • each cooling/heating tube consisting of an outer tube, a traversable inner tube and a traversable intermediate space and that each inner tube is connected to a feed for a medium of a first thermal conductivity and each intermediate space is connected to a feed for a medium of a second thermal conductivity.
  • the feeds for the media of different thermal conductivity each consist of a distributor device with media feed so that the media are uniformly distributed over all parallel cooling strands.
  • the distributor device for the medium of first or second thermal conductivity has a trapezoidal inner space in which an also trapezoidal volume element with smaller dimensions is arranged.
  • the volume element ensures uniform distribution of the media in the inner tubes and intermediate spaces between the corresponding inner and outer tube.
  • the inner tube is finally connected to a water feed as medium of first thermal conductivity and the intermediate space is connected to an air feed as medium of second thermal conductivity.
  • FIG. 1 shows a cooling/heating plate according to the prior art
  • FIG. 2 shows a cooling/heating plate according to the invention with parallel cooling/heating tubes
  • FIG. 3 shows a schematic view of a device for uniform distribution of air and water in the cooling/heating tubes according to FIG. 2 and
  • FIG. 4 shows a schematic view of a cooling/heating tube.
  • a number of cooling/heating tubes 5 are passed parallel through the cooling/heating plate 1 and the heating/cooling medium water/air is uniformly distributed over all parallel cooling strands via a distributor device 6 with media feed 7 .
  • jacketed cooling/heating tubes 5 are used in which an intermediate space 10 is arranged between the outer wall of the inner tube 8 and the outer tube 9 ( FIG. 4 ).
  • the substrates being cooled lie on the cooling/heating plate 1 .
  • Cooling occurs with water, which is passed through the inner tube 8 , during which damping of the cooling power is conducted simultaneously by passing air through the intermediate space 10 .
  • the underlying idea is therefore to use the high cooling power of water (medium with first thermal conductivity) and regulate it with the damping effect of air (medium with second thermal conductivity). It is understood that defined heating can also be accomplished and supported in the same way by passing heated water into the inner tube, in which case heating and cooling can alternate with each other.
  • FIG. 3 For simultaneous distribution of air and water to the parallel cooling/heating tubes 5 a special trapezoidal distributor device 6 with an also trapezoidal volume element 11 situated inside with smaller dimensions is used ( FIG. 3 ).
  • This distributor device 6 bridges the parallel cooling/heating tubes 5 on both sides of the cooling/heating plate ( FIG. 2 ) and ensures uniform water distribution in all cooling/heating tubes 5 so that a uniform temperature distribution is achieved on the entire cooling/heating plate 1 .
  • the cooling medium water then flows through the inner tube 8 in a uniform stream or also in pulsed fashion.
  • the air flowing through the intermediate space 10 attenuates heat transfer and therefore dampens the cooling power of the water. Owing to the fact that numerous parallel cooling/heating tubes 5 are used, a higher water throughput, connected with very high maximum cooling power, can be achieved. Flow of the tube media through the cooling/heating tubes 5 can occur in the same or opposite direction.
  • the cooling power can be controlled in stepless fashion according to the invention by volume control of the air from the minimum to the attainable maximum.
  • the intermediate space 10 around the inner tubes 8 can also be fully flooded with water.
  • Cooling rates from ⁇ 1 K/min to ⁇ 100 K/min can be continuously controlled with the solution according to the invention.
  • the temperature homogeneity over the surface of the heating/cooling plate is about 35 K.
  • a particular advantage of this invention is seen in the fact that the method is easy to manage and that the media water and (compressed) air are available everywhere among users anyway.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Furnace Details (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
  • General Preparation And Processing Of Foods (AREA)
  • Heat-Exchange Devices With Radiators And Conduit Assemblies (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
US12/515,067 2006-11-17 2007-11-16 Method and arrangement for heat treatment of substrates Abandoned US20100032146A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006054691 2006-11-17
DE102006054691.1 2006-11-17
PCT/EP2007/062448 WO2008059049A1 (de) 2006-11-17 2007-11-16 Verfahren und anordnung zum thermischen behandeln von substraten

Publications (1)

Publication Number Publication Date
US20100032146A1 true US20100032146A1 (en) 2010-02-11

Family

ID=38969571

Family Applications (1)

Application Number Title Priority Date Filing Date
US12/515,067 Abandoned US20100032146A1 (en) 2006-11-17 2007-11-16 Method and arrangement for heat treatment of substrates

Country Status (11)

Country Link
US (1) US20100032146A1 (no)
EP (1) EP2092557B1 (no)
JP (1) JP2010510649A (no)
KR (1) KR20090113250A (no)
AT (1) ATE514183T1 (no)
AU (1) AU2007321185A1 (no)
CA (1) CA2669417A1 (no)
IL (1) IL198776A (no)
NO (1) NO20092169L (no)
WO (1) WO2008059049A1 (no)
ZA (1) ZA200903702B (no)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130163504A1 (en) * 2010-08-12 2013-06-27 Beibei Jia Method, device, and system for acquistion of control node information
US20210090863A1 (en) * 2017-12-21 2021-03-25 Meyer Burger (Germany) Gmbh System for electrically decoupled, homogeneous temperature control of an electrode by means of heat conduction tubes, and processing facility comprising such a system

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101800258A (zh) * 2010-02-11 2010-08-11 天津大学 电热冷三联产的建筑一体化辐射板

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060219360A1 (en) * 2005-03-31 2006-10-05 Tokyo Electron Limited Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4644943B2 (ja) * 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
JP2003324095A (ja) * 2002-05-02 2003-11-14 Komatsu Ltd 半導体製造装置用基板の冷却回路とその冷却回路を備えた半導体製造装置
US20050229854A1 (en) * 2004-04-15 2005-10-20 Tokyo Electron Limited Method and apparatus for temperature change and control
JP2006064200A (ja) * 2004-08-24 2006-03-09 Furukawa Electric Co Ltd:The 熱交換器
JP4738781B2 (ja) * 2004-09-15 2011-08-03 エスペック株式会社 温度制御装置
DE102005049598B4 (de) * 2005-10-17 2017-10-19 Att Advanced Temperature Test Systems Gmbh Hybrid Chuck

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060219360A1 (en) * 2005-03-31 2006-10-05 Tokyo Electron Limited Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130163504A1 (en) * 2010-08-12 2013-06-27 Beibei Jia Method, device, and system for acquistion of control node information
US20210090863A1 (en) * 2017-12-21 2021-03-25 Meyer Burger (Germany) Gmbh System for electrically decoupled, homogeneous temperature control of an electrode by means of heat conduction tubes, and processing facility comprising such a system

Also Published As

Publication number Publication date
ZA200903702B (en) 2010-02-24
AU2007321185A1 (en) 2008-05-22
KR20090113250A (ko) 2009-10-29
NO20092169L (no) 2009-06-04
EP2092557A1 (de) 2009-08-26
IL198776A (en) 2012-07-31
ATE514183T1 (de) 2011-07-15
JP2010510649A (ja) 2010-04-02
CA2669417A1 (en) 2008-05-22
WO2008059049A1 (de) 2008-05-22
IL198776A0 (en) 2010-02-17
EP2092557B1 (de) 2011-06-22

Similar Documents

Publication Publication Date Title
TWI796292B (zh) 用於電漿處理腔室中晶圓載體的先進溫度控制
CN100565787C (zh) 具有温度受控的表面的基片支架
US8741065B2 (en) Substrate processing apparatus
US6300600B1 (en) Hot wall rapid thermal processor
TW201017768A (en) Rapid thermal processing lamphead with improved cooling
WO2009086013A2 (en) Method and apparatus for controlling temperature of a substrate
WO2001080291B1 (en) Methods and apparatus for thermally processing wafers
JP2007335425A (ja) 載置台構造及び熱処理装置
WO2016206542A1 (zh) 半导体镀膜设备控温系统
US8901518B2 (en) Chambers with improved cooling devices
CN104911544A (zh) 控温盘
US20190326139A1 (en) Ceramic wafer heater having cooling channels with minimum fluid drag
US20100032146A1 (en) Method and arrangement for heat treatment of substrates
TW200605178A (en) Cooling systems and apparatuses thereof for temperature control of semiconductor
KR100900318B1 (ko) 박막증착장치용 샤워헤드 및 박막증착장치 세정방법
US10487401B2 (en) Diffuser temperature control
TWI237293B (en) Forced convection assisted rapid thermal furnace
JP4186644B2 (ja) 真空処理装置の冷却装置
CN212991070U (zh) 静电卡盘和半导体设备
CN108292617A (zh) 用于毫秒退火系统的室壁加热
JP5376023B2 (ja) 載置台構造及び熱処理装置
JP2002141287A (ja) プラズマ処理装置
CN215491232U (zh) 用于热板降温的组件及设备
WO1999018602A1 (en) Foam-based heat exchanger with heating element
US20070289535A1 (en) Substrate Surface Treating Apparatus

Legal Events

Date Code Title Description
AS Assignment

Owner name: CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG,GERMAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HARTUNG, ROBERT MICHAEL;VOLLER, HANS ULRICH;SIGNING DATES FROM 20090626 TO 20090709;REEL/FRAME:023080/0053

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION