JP2010510649A - 基層の熱処理方法及び熱処理装置 - Google Patents
基層の熱処理方法及び熱処理装置 Download PDFInfo
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- JP2010510649A JP2010510649A JP2009536741A JP2009536741A JP2010510649A JP 2010510649 A JP2010510649 A JP 2010510649A JP 2009536741 A JP2009536741 A JP 2009536741A JP 2009536741 A JP2009536741 A JP 2009536741A JP 2010510649 A JP2010510649 A JP 2010510649A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 94
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000001816 cooling Methods 0.000 claims abstract description 91
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 4
- 238000005476 soldering Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F1/00—Tubular elements; Assemblies of tubular elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F1/00—Tubular elements; Assemblies of tubular elements
- F28F1/10—Tubular elements and assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with projections, with recesses
- F28F1/12—Tubular elements and assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with projections, with recesses the means being only outside the tubular element
- F28F1/14—Tubular elements and assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with projections, with recesses the means being only outside the tubular element and extending longitudinally
- F28F1/22—Tubular elements and assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with projections, with recesses the means being only outside the tubular element and extending longitudinally the means having portions engaging further tubular elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F27/00—Control arrangements or safety devices specially adapted for heat-exchange or heat-transfer apparatus
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F9/00—Casings; Header boxes; Auxiliary supports for elements; Auxiliary members within casings
- F28F9/02—Header boxes; End plates
- F28F9/026—Header boxes; End plates with static flow control means, e.g. with means for uniformly distributing heat exchange media into conduits
- F28F9/0263—Header boxes; End plates with static flow control means, e.g. with means for uniformly distributing heat exchange media into conduits by varying the geometry or cross-section of header box
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F9/00—Casings; Header boxes; Auxiliary supports for elements; Auxiliary members within casings
- F28F9/02—Header boxes; End plates
- F28F9/026—Header boxes; End plates with static flow control means, e.g. with means for uniformly distributing heat exchange media into conduits
- F28F9/0265—Header boxes; End plates with static flow control means, e.g. with means for uniformly distributing heat exchange media into conduits by using guiding means or impingement means inside the header box
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Furnace Details (AREA)
- Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Heat-Exchange Devices With Radiators And Conduit Assemblies (AREA)
- General Preparation And Processing Of Foods (AREA)
Abstract
【解決手段】冷却/加熱プレートによる基層の熱処理方法において、第1の媒体と、該第1の媒体より低い熱伝導率を有する第2の媒体とを、前記第1の媒体が前記第2の媒体を完全に包囲するように、同時に前記冷却/加熱プレート内を流通させる。また、前記第1及び第2の媒体の流通速度及び流通方向を、前記冷却/加熱プレートによって、互いに独立して調整する。
Description
2 冷却配管
3,4 接続部
5 冷却/加熱配管
6 分配装置
7 冷却/加熱媒体供給口
8 内部配管
9 外部配管
10 中間室
11 台形部材
Claims (14)
- 冷却/加熱プレートによる基層の熱処理方法において、
第1の媒体と、該第1の媒体より低い熱伝導率を有する第2の媒体とを、前記第1の媒体が前記第2の媒体を完全に包囲するように、同時に前記冷却/加熱プレート内を流通させることを特徴とする熱処理方法。 - 前記第1及び第2の媒体の流通速度及び流通方向を、前記冷却/加熱プレートによって、互いに独立して調整することを特徴とする請求項1記載の熱処理方法。
- 前記第1の媒体を液体とすることを特徴とする請求項1又は2記載の熱処理方法。
- 前記第1の媒体を水とすることを特徴とする請求項3記載の熱処理方法。
- 前記第2の媒体を気体とすることを特徴とする請求項1又は2記載の熱処理方法。
- 前記第2の媒体を空気とすることを特徴とする請求項5記載の熱処理方法。
- 前記冷却/加熱プレートでの流通前に前記第1の媒体を冷却又は加熱することを特徴とする請求項1〜6のいずれか1項に記載の熱処理方法。
- 前記第2の媒体の流量を制御することによって冷却/加熱能力を最小から最大まで無段階に制御することを特徴とする請求項1〜7のいずれか1項に記載の熱処理方法。
- 前記第1の媒体を定常的に、又は脈動的に前記冷却/加熱プレート内で流通させることを特徴とする請求項1〜8のいずれか1項に記載の熱処理方法。
- 前記第2の媒体を、少なくとも一時的に前記第1の媒体と入れ替えることを特徴とする請求項1〜4のいずれか1項に記載の熱処理方法。
- 冷却/加熱プレートによる基層の熱処理装置において、
互いに平行に延びる複数の冷却/加熱配管(5)を前記冷却/加熱プレート(1)内に設けるとともに、該各冷却/加熱配管(5)を外部配管(9)、内部配管(8)及びこれら外部配管と内部配管の間に位置する中間室(10)で構成し、
前記内部配管(8)を第1の熱伝導率を有する第1の媒体用の供給部に接続するとともに、前記中間室(10)を第2の熱伝導率を有する第2の媒体用の供給部に接続した
ことを特徴とする熱処理装置。 - 互いに異なる熱伝導率を有する前記第1及び第2の媒体用の供給部をそれぞれ媒体供給口(7)を備えた分配装置(6)で構成し、前記第1及び第2の媒体を前記冷却/加熱配管全体にわたって供給するよう構成したことを特徴とする請求項11記載の熱処理装置。
- 前記第1及び第2の媒体用の前記分配装置(6)内に内部空間を設け、該内部空間内に台形部材(11)を収容したことを特徴とする請求項12記載の熱処理装置。
- 前記内部配管(8)を前記第1の媒体としての水の供給部に接続するとともに、前記中間室(10)を前記第2の媒体としての空気の供給部に接続したことを特徴とする請求項11〜13のいずれか1項に記載の熱処理装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006054691 | 2006-11-17 | ||
PCT/EP2007/062448 WO2008059049A1 (de) | 2006-11-17 | 2007-11-16 | Verfahren und anordnung zum thermischen behandeln von substraten |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010510649A true JP2010510649A (ja) | 2010-04-02 |
Family
ID=38969571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009536741A Pending JP2010510649A (ja) | 2006-11-17 | 2007-11-16 | 基層の熱処理方法及び熱処理装置 |
Country Status (11)
Country | Link |
---|---|
US (1) | US20100032146A1 (ja) |
EP (1) | EP2092557B1 (ja) |
JP (1) | JP2010510649A (ja) |
KR (1) | KR20090113250A (ja) |
AT (1) | ATE514183T1 (ja) |
AU (1) | AU2007321185A1 (ja) |
CA (1) | CA2669417A1 (ja) |
IL (1) | IL198776A (ja) |
NO (1) | NO20092169L (ja) |
WO (1) | WO2008059049A1 (ja) |
ZA (1) | ZA200903702B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101800258A (zh) * | 2010-02-11 | 2010-08-11 | 天津大学 | 电热冷三联产的建筑一体化辐射板 |
CN102378301B (zh) * | 2010-08-12 | 2015-03-11 | 电信科学技术研究院 | 获取控制节点信息的方法、设备及系统 |
DE102017223592B4 (de) * | 2017-12-21 | 2023-11-09 | Meyer Burger (Germany) Gmbh | System zur elektrisch entkoppelten, homogenen Temperierung einer Elektrode mittels Wärmeleitrohren sowie Bearbeitungsanlage mit einem solchen System |
BE1028438B1 (nl) * | 2020-06-26 | 2022-02-03 | Atlas Copco Airpower Nv | Warmtewisselaar en werkwijze voor het vervaardigen van een dergelijke warmtewisselaar |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002217178A (ja) * | 2001-01-23 | 2002-08-02 | Tokyo Electron Ltd | 処理装置及び処理方法 |
JP2003324095A (ja) * | 2002-05-02 | 2003-11-14 | Komatsu Ltd | 半導体製造装置用基板の冷却回路とその冷却回路を備えた半導体製造装置 |
JP2006064200A (ja) * | 2004-08-24 | 2006-03-09 | Furukawa Electric Co Ltd:The | 熱交換器 |
JP2006086260A (ja) * | 2004-09-15 | 2006-03-30 | Espec Corp | 温度制御装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050229854A1 (en) * | 2004-04-15 | 2005-10-20 | Tokyo Electron Limited | Method and apparatus for temperature change and control |
US7789962B2 (en) * | 2005-03-31 | 2010-09-07 | Tokyo Electron Limited | Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same |
DE102005049598B4 (de) * | 2005-10-17 | 2017-10-19 | Att Advanced Temperature Test Systems Gmbh | Hybrid Chuck |
-
2007
- 2007-11-16 JP JP2009536741A patent/JP2010510649A/ja active Pending
- 2007-11-16 CA CA002669417A patent/CA2669417A1/en not_active Abandoned
- 2007-11-16 AU AU2007321185A patent/AU2007321185A1/en not_active Abandoned
- 2007-11-16 US US12/515,067 patent/US20100032146A1/en not_active Abandoned
- 2007-11-16 AT AT07822667T patent/ATE514183T1/de active
- 2007-11-16 KR KR1020097012500A patent/KR20090113250A/ko not_active Application Discontinuation
- 2007-11-16 WO PCT/EP2007/062448 patent/WO2008059049A1/de active Application Filing
- 2007-11-16 EP EP07822667A patent/EP2092557B1/de not_active Not-in-force
-
2009
- 2009-05-14 IL IL198776A patent/IL198776A/en not_active IP Right Cessation
- 2009-05-28 ZA ZA2009/03702A patent/ZA200903702B/en unknown
- 2009-06-04 NO NO20092169A patent/NO20092169L/no not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002217178A (ja) * | 2001-01-23 | 2002-08-02 | Tokyo Electron Ltd | 処理装置及び処理方法 |
JP2003324095A (ja) * | 2002-05-02 | 2003-11-14 | Komatsu Ltd | 半導体製造装置用基板の冷却回路とその冷却回路を備えた半導体製造装置 |
JP2006064200A (ja) * | 2004-08-24 | 2006-03-09 | Furukawa Electric Co Ltd:The | 熱交換器 |
JP2006086260A (ja) * | 2004-09-15 | 2006-03-30 | Espec Corp | 温度制御装置 |
Also Published As
Publication number | Publication date |
---|---|
AU2007321185A1 (en) | 2008-05-22 |
WO2008059049A1 (de) | 2008-05-22 |
IL198776A0 (en) | 2010-02-17 |
NO20092169L (no) | 2009-06-04 |
IL198776A (en) | 2012-07-31 |
ZA200903702B (en) | 2010-02-24 |
US20100032146A1 (en) | 2010-02-11 |
CA2669417A1 (en) | 2008-05-22 |
KR20090113250A (ko) | 2009-10-29 |
EP2092557B1 (de) | 2011-06-22 |
ATE514183T1 (de) | 2011-07-15 |
EP2092557A1 (de) | 2009-08-26 |
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