CA2669417A1 - Method and arrangement for thermal treatment of substrates - Google Patents

Method and arrangement for thermal treatment of substrates Download PDF

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Publication number
CA2669417A1
CA2669417A1 CA002669417A CA2669417A CA2669417A1 CA 2669417 A1 CA2669417 A1 CA 2669417A1 CA 002669417 A CA002669417 A CA 002669417A CA 2669417 A CA2669417 A CA 2669417A CA 2669417 A1 CA2669417 A1 CA 2669417A1
Authority
CA
Canada
Prior art keywords
cooling
medium
fact
thermal conductivity
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002669417A
Other languages
French (fr)
Inventor
Robert Michael Hartung
Hans Ulrich Voller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centrotherm Thermal Solutions GmbH and Co KG
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2669417A1 publication Critical patent/CA2669417A1/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F1/00—Tubular elements; Assemblies of tubular elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F1/00—Tubular elements; Assemblies of tubular elements
    • F28F1/10—Tubular elements and assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with projections, with recesses
    • F28F1/12—Tubular elements and assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with projections, with recesses the means being only outside the tubular element
    • F28F1/14—Tubular elements and assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with projections, with recesses the means being only outside the tubular element and extending longitudinally
    • F28F1/22—Tubular elements and assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with projections, with recesses the means being only outside the tubular element and extending longitudinally the means having portions engaging further tubular elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F27/00—Control arrangements or safety devices specially adapted for heat-exchange or heat-transfer apparatus
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F9/00—Casings; Header boxes; Auxiliary supports for elements; Auxiliary members within casings
    • F28F9/02—Header boxes; End plates
    • F28F9/026—Header boxes; End plates with static flow control means, e.g. with means for uniformly distributing heat exchange media into conduits
    • F28F9/0263—Header boxes; End plates with static flow control means, e.g. with means for uniformly distributing heat exchange media into conduits by varying the geometry or cross-section of header box
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F9/00—Casings; Header boxes; Auxiliary supports for elements; Auxiliary members within casings
    • F28F9/02—Header boxes; End plates
    • F28F9/026—Header boxes; End plates with static flow control means, e.g. with means for uniformly distributing heat exchange media into conduits
    • F28F9/0265—Header boxes; End plates with static flow control means, e.g. with means for uniformly distributing heat exchange media into conduits by using guiding means or impingement means inside the header box
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Furnace Details (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • General Preparation And Processing Of Foods (AREA)
  • Heat-Exchange Devices With Radiators And Conduit Assemblies (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)

Abstract

The invention relates to a method for heat treatment of substrates, and to an arrangement for carrying out the method. The object is to provide a method and an arrangement for heat treatment of substrates which allow continuously adjustable cooling rates over a wide temperature range with simultaneously largely homogeneous temperature distribution over the area of the heating/cooling plate. This is achieved by virtue of the cooling/heating plate (1) containing a multiplicity of cooling/heating pipes (5) running parallel to one another, each cooling/heating pipe (5) comprising an outer pipe (9), an inner pipe (8) which can carry a flow and an interspace (10) between them which can carry a flow, and each inner pipe (8) being connected to a supply line for water and each interspace (10) being connected to a supply line for air, with water and air being routed simultaneously through the cooling/heating plate.

Description

= . CA 02669417 2009-06-02 Method and Arrangement for Thermal Treatment of Substrates The invention concerns a method for thermal treatment of substrates, as well as an arrangement for execution of the method.

RTP (rapid thermal processes) are often used in heat treatment of substrates, for example, semiconductor wafers, solar cells, equipped circuit boards, etc., i.e., processes with rapid temperature changes, in order to impart certain properties to the treated materials or to control soldering processes or quite simply to drastically shorten the duration of the thermal processes.

Heating ordinarily occurs by radiation heating and/or a cooling/heating plate on which the substrates being treated lie or are arranged at limited, optionally variable spacing above it.

Very high ramp rates of the temperature change, if possible also with an adjustable ramp curve, must be achieved during treatment of substrates with RTP
processes.

To achieve this the cooling/heating plates 1, consisting of brass, aluminum, stainless steel, gray cast iron, etc., are equipped with a cooling tube 2, which is passed through meander-like (Figure 1, prior art) and through which compressed air or water flows. For this purpose the cooling tube 2 is provided with a connection 3 for water supply and a connection 4 for water discharge. A
cooling rate of up to 5 K/min can be achieved with compressed air and a cooling rate of >20 K/min with water.

A method and an apparatus for heat treatment of wafer-like substrates is apparent from DE 102 60 672 A1, in which a heating/cooling plate traversed by a fluid is provided to heat and cool and a substrate. The corresponding fluid can then be held statically within the heating/cooling plate or continuously passed through it, specifically for cooling of the heating/cooling plate, as required.

A range of temperature change of 15 K/min lies between cooling with pure air and cooling with water. This results in the problem that stepless cooling with ramp rates in the range from -1 to -100 K/min cannot be achieved. Moreover, the meandering passage of the cooling tubes through the cooling/heating plate does not provide acceptable homogeneity of the temperature distribution on the surface of the plate even with respect to higher soldering temperatures above 450 C. A
temperature homogeneity of 150 K over the plate at 650 K is reached during meander cooling.

This results in the task of devising a method and arrangement for thermal treatment of substrates with which continuously adjustable cooling rates can be achieved over a broad temperature range with essentially homogeneous temperature distribution at the same time over the surface of the heating/cooling plate.

The task underlying the invention is solved according to the method in that two media of different thermal conductivity are simultaneously passed through a cooling/heating plate so that a first medium of higher thermal conductivity is fully enclosed during flow through the cooling/heating plate by at least a second medium of lower thermal conductivity.
When the cooling/heating plate is used as a heating plate, the attainable upper temperature is naturally dependent on the first medium, whereas when the cooling/heating plate is used as a cooling plate it can be cooled down from much higher temperatures, as occur, for example, during soldering processes.

= . CA 02669417 2009-06-02 In a first embodiment of the invention, the flow rate and direction of both media through the cooling/heating plate can be adjusted independently of each other so that ramp rates in the range from -1 to -100 K/min are attainable in fine steps.

The first medium of higher thermal conductivity is a liquid, preferably water, and the second medium of lower thermal conductivity is a gas, preferably air.

In a special embodiment of the invention the first medium is either cooled or heated as required for introduction to the cooling/heating plate.
Another embodiment of the invention is characterized by the fact that the cooling or heating power is controlled in stepless fashion from the minimum to the attainable maximum by volume control of the second medium.

Finally, it is prescribed that the first medium is passed continuously or in pulses through the cooling/heating plate.

For a case in which a particularly high cooling rate is to be achieved, the second medium is at least temporarily replaced by the first medium.
The task underlying the invention is also solved by a device, characterized by the fact that a number of cooling/heating tubes are arranged parallel to each other within a cooling/heating plate, each cooling/heating tube consisting of an outer tube, a traversable inner tube and a traversable intermediate space and that each inner tube is connected to a feed for a medium of a first thermal conductivity and each intermediate space is connected to a feed for a medium of a second thermal conductivity.

In a modification of the invention the feeds for the media of different thermal conductivity each consist of a distributor device with media feed so that the media are uniformly distributed over all parallel cooling strands.
The distributor device for the medium of first or second thermal conductivity has a trapezoidal inner space in which an also trapezoidal volume element with smaller dimensions is arranged. The volume element ensures uniform distribution of the media in the inner tubes and intermediate spaces between the corresponding inner and outer tube.

The inner tube is finally connected to a water feed as medium of first thermal conductivity and the intermediate space is connected to an air feed as medium of second thermal conductivity.
The invention will be explained further below on a practical example. In the corresponding figures of the drawing:

Figure 1: shows a cooling/heating plate according to the prior art;
Figure 2: shows a cooling/heating plate according to the invention with parallel cooling/heating tubes;

Figure 3: shows a schematic view of a device for uniform distribution of air and water in the cooling/heating tubes according to Figure 2 and Figure 4: shows a schematic view of a cooling/heating tube.

According to the invention a number of cooling/heating tubes 5 are passed parallel through the cooling/heating plate 1 and the heating/cooling medium water/air is uniformly distributed over all parallel cooling strands via a distributor device 6 with media feed 7. To achieve this, jacketed cooling/heating tubes 5 are used in which an intermediate space 10 is arranged between the outer wall of the inner tube 8 and the outer tube 9 (Figure 4). The substrates being cooled (not shown), such as silicon wafers or the like, lie on the cooling/heating plate 1.

, . = CA 02669417 2009-06-02 Cooling occurs with water, which is passed through the inner tube 8, during which damping of the cooling power is conducted simultaneously by passing air through the intermediate space 10. The underlying idea is therefore to use the high cooling power of water (medium with first thermal conductivity) and regulate it 5 with the damping effect of air (medium with second thermal conductivity). It is understood that defined heating can also be accomplished and supported in the same way by passing heated water into the inner tube, in which case heating and cooling can alternate with each other.

For simultaneous distribution of air and water to the parallel cooling/heating tubes 5 a special trapezoidal distributor device 6 with an also trapezoidal volume element 11 situated inside with smaller dimensions is used (Figure 3). This distributor device 6 bridges the parallel cooling/heating tubes 5 on both sides of the cooling/heating plate (Figure 2) and ensures uniform water distribution in all cooling/heating tubes 5 so that a uniform temperature distribution is achieved on the entire cooling/heating plate 1.

The cooling medium water then flows through the inner tube 8 in a uniform stream or also in pulsed fashion. The air flowing through the intermediate space 10 attenuates heat transfer and therefore dampens the cooling power of the water.
Owing to the fact that numerous parallel cooling/heating tubes 5 are used, a higher water throughput, connected with very high maximum cooling power, can be achieved. Flow of the tube media through the cooling/heating tubes 5 can occur in the same or opposite direction.
The cooling power can be controlled in stepless fashion according to the invention by volume control of the air from the minimum to the attainable maximum.

If very high cooling rates are required, the intermediate space 10 around the inner tubes 8 can also be fully flooded with water.

= , = CA 02669417 2009-06-02 Cooling rates from -1 K/min to -100 K/min can be continuously controlled with the solution according to the invention. The temperature homogeneity over the surface of the heating/cooling plate is about 35 K.

A particular advantage of this invention is seen in the fact that the method is easy to manage and that the media water and (compressed) air are available everywhere among users anyway.
Method and Arrangement for Thermal Treatment of Substrates List of reference numbers 1 Cooling/heating plate 2 Cooling tube 3 Connection 4 Connection 5 Cooling/heating tube 6 Distributor device 7 Media feed 8 Inner tube 9 Outer tube 10 Intermediate space 11 Volume element

Claims (14)

1. Method for thermal treatment of substrates by means of a cooling/heating plate, characterized by the fact that two media of different thermal conductivity are simultaneously passed through the cooling/heating plate so that a first medium of higher thermal conductivity is fully enclosed by at least a second medium of lower thermal conductivity during flow through the cooling/heating plate.
2. Method according to Claim 1, characterized by the fact that the flow rate and direction of both media through the cooling/heating plate are adjustable independently of each other.
3. Method according to Claim 1 and 2, characterized by the fact that a liquid is used as first medium of higher thermal conductivity.
4. Method according to Claim 3, characterized by the fact that water is used as first medium.
5. Method according to Claim 1 and 2, characterized by the fact that a gas is used as second medium of lower thermal conductivity.
6. Method according to Claim 5, characterized by the fact that air is used as second medium.
7. Method according to one of the Claims 1 to 6, characterized by the fact that the first medium is cooled or heated for introduction to the cooling/heating plate.
8. Method according to one of the Claims 1 to 7, characterized by the fact that the cooling or heating power is controlled in stepless fashion from the minimum to the attainable maximum by volume control of the second medium.
9. Method according to one of the Claims 1 to 8, characterized by the fact that the first medium is passed through the cooling/heating plate continuously or in pulsed fashion.
10. Method according to one of the Claims 1 to 4, characterized by the fact that the second medium is at least temporarily replaced by the first medium.
11. Device for thermal treatment of substrates by means of a cooling/heating plate, characterized by the fact that a number of cooling/heating tubes (5) are arranged parallel to each other within the cooling/heating plate (1), each cooling/heating tube (5) consisting of an outer tube (9), a traversable inner tube (8) and a traversable intermediate space (10) and that each inner tube (8) is connected to a feed for a medium of a first thermal conductivity and each intermediate space (10) is connected to a feed for a medium of a second thermal conductivity.
12. Device according to Claim 11, characterized by the fact that the feeds for the media of different thermal conductivity each consist of a distributor device (6) with medium feed (7) so that the media are distributed uniformly over all parallel cooling strands.
13. Device according to Claim 12, characterized by the fact that the distributor device (6) for the media of the first or second thermal conductivity has a trapezoidal inner space in which an also trapezoidal volume element (11) with smaller dimensions is arranged.
14. Device according to Claims 11 to 13, characterized by the fact that the inner tube (8) is connected to a water feed as medium of a first thermal conductivity and the intermediate space (11) is connected to an air feed as medium of second thermal conductivity.
CA002669417A 2006-11-17 2007-11-16 Method and arrangement for thermal treatment of substrates Abandoned CA2669417A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006054691.1 2006-11-17
DE102006054691 2006-11-17
PCT/EP2007/062448 WO2008059049A1 (en) 2006-11-17 2007-11-16 Method and arrangement for heat treatment of substrates

Publications (1)

Publication Number Publication Date
CA2669417A1 true CA2669417A1 (en) 2008-05-22

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Family Applications (1)

Application Number Title Priority Date Filing Date
CA002669417A Abandoned CA2669417A1 (en) 2006-11-17 2007-11-16 Method and arrangement for thermal treatment of substrates

Country Status (11)

Country Link
US (1) US20100032146A1 (en)
EP (1) EP2092557B1 (en)
JP (1) JP2010510649A (en)
KR (1) KR20090113250A (en)
AT (1) ATE514183T1 (en)
AU (1) AU2007321185A1 (en)
CA (1) CA2669417A1 (en)
IL (1) IL198776A (en)
NO (1) NO20092169L (en)
WO (1) WO2008059049A1 (en)
ZA (1) ZA200903702B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101800258A (en) * 2010-02-11 2010-08-11 天津大学 Electricity-heat-cold triplex co-generation building integrated radiation panel
CN102378301B (en) * 2010-08-12 2015-03-11 电信科学技术研究院 Method, device and system for obtaining control node information
DE102017223592B4 (en) * 2017-12-21 2023-11-09 Meyer Burger (Germany) Gmbh System for electrically decoupled, homogeneous temperature control of an electrode using heat pipes and processing system with such a system

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4644943B2 (en) * 2001-01-23 2011-03-09 東京エレクトロン株式会社 Processing equipment
JP2003324095A (en) * 2002-05-02 2003-11-14 Komatsu Ltd Substrate cooling circuit for semiconductor manufacturing device and semiconductor manufacturing device provided with cooling circuit
US20050229854A1 (en) * 2004-04-15 2005-10-20 Tokyo Electron Limited Method and apparatus for temperature change and control
JP2006064200A (en) * 2004-08-24 2006-03-09 Furukawa Electric Co Ltd:The Heat exchanger
JP4738781B2 (en) * 2004-09-15 2011-08-03 エスペック株式会社 Temperature control device
US7789962B2 (en) * 2005-03-31 2010-09-07 Tokyo Electron Limited Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same
DE102005049598B4 (en) * 2005-10-17 2017-10-19 Att Advanced Temperature Test Systems Gmbh Hybrid Chuck

Also Published As

Publication number Publication date
ATE514183T1 (en) 2011-07-15
WO2008059049A1 (en) 2008-05-22
KR20090113250A (en) 2009-10-29
ZA200903702B (en) 2010-02-24
IL198776A0 (en) 2010-02-17
AU2007321185A1 (en) 2008-05-22
US20100032146A1 (en) 2010-02-11
IL198776A (en) 2012-07-31
NO20092169L (en) 2009-06-04
EP2092557A1 (en) 2009-08-26
EP2092557B1 (en) 2011-06-22
JP2010510649A (en) 2010-04-02

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FZDE Discontinued

Effective date: 20131118