US20100029066A1 - Susceptor, vapor phase growth apparatus, and method of manufacturing epitaxial wafer - Google Patents

Susceptor, vapor phase growth apparatus, and method of manufacturing epitaxial wafer Download PDF

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Publication number
US20100029066A1
US20100029066A1 US12/512,283 US51228309A US2010029066A1 US 20100029066 A1 US20100029066 A1 US 20100029066A1 US 51228309 A US51228309 A US 51228309A US 2010029066 A1 US2010029066 A1 US 2010029066A1
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US
United States
Prior art keywords
susceptor
semiconductor wafer
vapor phase
wafer
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/512,283
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English (en)
Inventor
Junji Miyashita
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Sumco Corp
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Sumco Corp
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Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Assigned to SUMCO CORPORATION reassignment SUMCO CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MIYASHITA, JUNJI
Publication of US20100029066A1 publication Critical patent/US20100029066A1/en
Priority to US14/301,600 priority Critical patent/US9123759B2/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67386—Closed carriers characterised by the construction of the closed carrier
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
US12/512,283 2008-07-31 2009-07-30 Susceptor, vapor phase growth apparatus, and method of manufacturing epitaxial wafer Abandoned US20100029066A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/301,600 US9123759B2 (en) 2008-07-31 2014-06-11 Susceptor, vapor phase growth apparatus, and method of manufacturing epitaxial wafer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008197880A JP5092975B2 (ja) 2008-07-31 2008-07-31 エピタキシャルウェーハの製造方法
JP2008-197880 2008-07-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US14/301,600 Division US9123759B2 (en) 2008-07-31 2014-06-11 Susceptor, vapor phase growth apparatus, and method of manufacturing epitaxial wafer

Publications (1)

Publication Number Publication Date
US20100029066A1 true US20100029066A1 (en) 2010-02-04

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US12/512,283 Abandoned US20100029066A1 (en) 2008-07-31 2009-07-30 Susceptor, vapor phase growth apparatus, and method of manufacturing epitaxial wafer
US14/301,600 Active US9123759B2 (en) 2008-07-31 2014-06-11 Susceptor, vapor phase growth apparatus, and method of manufacturing epitaxial wafer

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Application Number Title Priority Date Filing Date
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JP (1) JP5092975B2 (ja)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070107653A1 (en) * 2003-12-17 2007-05-17 Toru Yamada Vapor phase growth apparatus and method of fabricating epitaxial wafer
US20100227455A1 (en) * 2007-11-08 2010-09-09 Sumco Corporation Epitaxial film growing method, wafer supporting structure and susceptor
US20110084367A1 (en) * 2009-10-09 2011-04-14 Sumco Corporation Epitaxial wafer and method of producing the same
US20110297088A1 (en) * 2010-06-04 2011-12-08 Texas Instruments Incorporated Thin edge carrier ring
US20120031330A1 (en) * 2010-08-04 2012-02-09 Toshiro Tsumori Semiconductor substrate manufacturing apparatus
US20120174859A1 (en) * 2009-09-17 2012-07-12 Kenji Sakamoto Method and apparatus for producing epitaxial wafer
US20130055952A1 (en) * 2011-03-11 2013-03-07 Applied Materials, Inc. Reflective deposition rings and substrate processing chambers incorporting same
US20140116336A1 (en) * 2012-10-26 2014-05-01 Applied Materials, Inc. Substrate process chamber exhaust
US20150075430A1 (en) * 2013-09-16 2015-03-19 Applied Materials, Inc. Epi pre-heat ring
US20150152991A1 (en) * 2013-11-29 2015-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for supplying process gas into wafer process apparatus
CN104756244A (zh) * 2012-10-16 2015-07-01 Lg矽得荣株式会社 用于外延生长的衬托器和用于外延生长的方法
CN107004583A (zh) * 2014-12-02 2017-08-01 昭和电工株式会社 晶片支承台、化学气相生长装置、外延晶片及其制造方法
US20170370020A1 (en) * 2015-01-22 2017-12-28 Lg Siltron Inc. Method for preparing restart of reactor for epitaxial growth on wafer
CN107978552A (zh) * 2016-10-25 2018-05-01 纽富来科技股份有限公司 气相生长装置、环状支架以及气相生长方法
US9957637B2 (en) 2013-06-10 2018-05-01 Sumco Corporation Method of producing epitaxial wafer
US20180211923A1 (en) * 2015-10-27 2018-07-26 Siltronic Ag Susceptor For Holding A Semiconductor Wafer Having An Orientation Notch, A Method For Depositing A Layer On A Semiconductor Wafer, And Semiconductor Wafer
WO2018192902A1 (de) * 2017-04-20 2018-10-25 Siltronic Ag Suszeptor zum halten einer halbleiterscheibe mit orientierungskerbe sowie abscheideverfahren
US10184193B2 (en) 2015-05-18 2019-01-22 Globalwafers Co., Ltd. Epitaxy reactor and susceptor system for improved epitaxial wafer flatness
CN110578166A (zh) * 2019-10-15 2019-12-17 上海新昇半导体科技有限公司 外延生长设备和外延生长方法
US10982324B2 (en) * 2016-06-28 2021-04-20 Siltronic Ag Method and device for producing coated semiconductor wafers
US20220205134A1 (en) * 2020-12-31 2022-06-30 Globalwafers Co., Ltd. Systems and methods for a preheat ring in a semiconductor wafer reactor

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5535347B1 (ja) * 2013-02-04 2014-07-02 エピクルー株式会社 撮像装置、半導体製造装置および半導体製造方法
CN107109688A (zh) * 2015-01-23 2017-08-29 应用材料公司 用于在晶片中消除沉积谷的新基座设计
DE102016212780A1 (de) * 2016-07-13 2018-01-18 Siltronic Ag Vorrichtung zur Handhabung einer Halbleiterscheibe in einem Epitaxie-Reaktor und Verfahren zur Herstellung einer Halbleiterscheibe mit epitaktischer Schicht
KR102370157B1 (ko) * 2017-08-31 2022-03-03 가부시키가이샤 사무코 서셉터, 에피택셜 성장 장치, 에피택셜 실리콘 웨이퍼의 제조 방법, 그리고 에피택셜 실리콘 웨이퍼
JP7151664B2 (ja) * 2019-08-15 2022-10-12 信越半導体株式会社 エピタキシャルウェーハの製造方法
US20230070804A1 (en) * 2021-09-02 2023-03-09 Wonik Ips Co., Ltd. Substrate processing apparatus
TW202334490A (zh) * 2021-10-21 2023-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板支撐件、基板支撐件總成、反應室及膜沉積方法
JP7276582B1 (ja) * 2022-09-28 2023-05-18 信越半導体株式会社 エピタキシャル成長用サセプタ及びエピタキシャルウェーハの製造方法

Citations (9)

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Publication number Priority date Publication date Assignee Title
US5785764A (en) * 1996-09-10 1998-07-28 Shin-Etsu Handotai Co., Ltd. Susceptor for a gas phase growth apparatus
US20030075109A1 (en) * 2001-03-30 2003-04-24 Takeshi Arai Vapor phase growth apparatus
US20040129225A1 (en) * 2001-05-31 2004-07-08 Hisashi Kashino Method of fabricating semiconductor wafer and susceptor used therefor
US7024105B2 (en) * 2003-10-10 2006-04-04 Applied Materials Inc. Substrate heater assembly
US20070160507A1 (en) * 2006-01-12 2007-07-12 Asm Japan K.K. Semiconductor processing apparatus with lift pin structure
US20080110401A1 (en) * 2004-05-18 2008-05-15 Sumco Corporation Susceptor For Vapor-Phase Growth Reactor
US20090127672A1 (en) * 2007-10-31 2009-05-21 Sumco Corporation Susceptor for epitaxial layer forming apparatus, epitaxial layer forming apparatus, epitaxial wafer, and method of manufacturing epitaxial wafer
US20090205562A1 (en) * 2008-02-19 2009-08-20 Sumco Corporation Method for manufacturing epitaxial wafer
US20090235867A1 (en) * 2008-03-21 2009-09-24 Sumco Corporation Susceptor for vapor phase epitaxial growth device

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JP4613451B2 (ja) * 2001-06-29 2011-01-19 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP2004063865A (ja) 2002-07-30 2004-02-26 Shin Etsu Handotai Co Ltd サセプタ、気相成長装置およびエピタキシャルウェーハの製造方法
JP4343580B2 (ja) * 2003-05-09 2009-10-14 シャープ株式会社 薄膜形成装置
JP2005197380A (ja) 2004-01-06 2005-07-21 Sumitomo Mitsubishi Silicon Corp ウェーハ支持装置
JP2007243167A (ja) * 2006-02-09 2007-09-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 サセプタおよびエピタキシャルウェハの製造装置
TW200802552A (en) * 2006-03-30 2008-01-01 Sumco Techxiv Corp Method of manufacturing epitaxial silicon wafer and apparatus thereof
JP4868522B2 (ja) * 2006-03-30 2012-02-01 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルウェーハの製造方法及び製造装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5785764A (en) * 1996-09-10 1998-07-28 Shin-Etsu Handotai Co., Ltd. Susceptor for a gas phase growth apparatus
US20030075109A1 (en) * 2001-03-30 2003-04-24 Takeshi Arai Vapor phase growth apparatus
US20040129225A1 (en) * 2001-05-31 2004-07-08 Hisashi Kashino Method of fabricating semiconductor wafer and susceptor used therefor
US7024105B2 (en) * 2003-10-10 2006-04-04 Applied Materials Inc. Substrate heater assembly
US20080110401A1 (en) * 2004-05-18 2008-05-15 Sumco Corporation Susceptor For Vapor-Phase Growth Reactor
US20070160507A1 (en) * 2006-01-12 2007-07-12 Asm Japan K.K. Semiconductor processing apparatus with lift pin structure
US20090127672A1 (en) * 2007-10-31 2009-05-21 Sumco Corporation Susceptor for epitaxial layer forming apparatus, epitaxial layer forming apparatus, epitaxial wafer, and method of manufacturing epitaxial wafer
US20090205562A1 (en) * 2008-02-19 2009-08-20 Sumco Corporation Method for manufacturing epitaxial wafer
US20090235867A1 (en) * 2008-03-21 2009-09-24 Sumco Corporation Susceptor for vapor phase epitaxial growth device

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8926753B2 (en) * 2003-12-17 2015-01-06 Shin-Etsu Handotai Co., Ltd. Vapor phase growth apparatus and method of fabricating epitaxial wafer
US20070107653A1 (en) * 2003-12-17 2007-05-17 Toru Yamada Vapor phase growth apparatus and method of fabricating epitaxial wafer
US8324063B2 (en) 2007-11-08 2012-12-04 Sumco Corporation Epitaxial film growing method, wafer supporting structure and susceptor
US20100227455A1 (en) * 2007-11-08 2010-09-09 Sumco Corporation Epitaxial film growing method, wafer supporting structure and susceptor
US20120174859A1 (en) * 2009-09-17 2012-07-12 Kenji Sakamoto Method and apparatus for producing epitaxial wafer
US10640883B2 (en) * 2009-09-17 2020-05-05 Sumco Corporation Method and apparatus for producing epitaxial wafer
US20110084367A1 (en) * 2009-10-09 2011-04-14 Sumco Corporation Epitaxial wafer and method of producing the same
US20110297088A1 (en) * 2010-06-04 2011-12-08 Texas Instruments Incorporated Thin edge carrier ring
US10720323B2 (en) 2010-06-04 2020-07-21 Texas Instruments Incorporated Method for processing a semiconductor wafer using a thin edge carrier ring
US20120031330A1 (en) * 2010-08-04 2012-02-09 Toshiro Tsumori Semiconductor substrate manufacturing apparatus
US9139933B2 (en) * 2010-08-04 2015-09-22 Nuflare Technology, Inc. Semiconductor substrate manufacturing apparatus
US20130055952A1 (en) * 2011-03-11 2013-03-07 Applied Materials, Inc. Reflective deposition rings and substrate processing chambers incorporting same
US9905443B2 (en) * 2011-03-11 2018-02-27 Applied Materials, Inc. Reflective deposition rings and substrate processing chambers incorporating same
JP2015535142A (ja) * 2012-10-16 2015-12-07 エルジー シルトロン インコーポレイテッド エピタキシャル成長用サセプタ及びエピタキシャル成長装置
US20150275395A1 (en) * 2012-10-16 2015-10-01 Lg Siltron Inc. Susceptor for epitaxial growing and method for epitaxial growing
CN104756244A (zh) * 2012-10-16 2015-07-01 Lg矽得荣株式会社 用于外延生长的衬托器和用于外延生长的方法
US20140116336A1 (en) * 2012-10-26 2014-05-01 Applied Materials, Inc. Substrate process chamber exhaust
US9957637B2 (en) 2013-06-10 2018-05-01 Sumco Corporation Method of producing epitaxial wafer
US10047457B2 (en) * 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
US20150075430A1 (en) * 2013-09-16 2015-03-19 Applied Materials, Inc. Epi pre-heat ring
US11414759B2 (en) * 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
US20150152991A1 (en) * 2013-11-29 2015-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for supplying process gas into wafer process apparatus
CN107004583A (zh) * 2014-12-02 2017-08-01 昭和电工株式会社 晶片支承台、化学气相生长装置、外延晶片及其制造方法
US10519566B2 (en) 2014-12-02 2019-12-31 Showa Denko K.K. Wafer support, chemical vapor phase growth device, epitaxial wafer and manufacturing method thereof
CN107771226A (zh) * 2015-01-22 2018-03-06 Lg矽得荣株式会社 晶片上进行外延生长的反应器重启动的准备方法
US20170370020A1 (en) * 2015-01-22 2017-12-28 Lg Siltron Inc. Method for preparing restart of reactor for epitaxial growth on wafer
US10184193B2 (en) 2015-05-18 2019-01-22 Globalwafers Co., Ltd. Epitaxy reactor and susceptor system for improved epitaxial wafer flatness
US20180211923A1 (en) * 2015-10-27 2018-07-26 Siltronic Ag Susceptor For Holding A Semiconductor Wafer Having An Orientation Notch, A Method For Depositing A Layer On A Semiconductor Wafer, And Semiconductor Wafer
US11380621B2 (en) * 2015-10-27 2022-07-05 Siltronic Ag Susceptor for holding a semiconductor wafer having an orientation notch, a method for depositing a layer on a semiconductor wafer, and semiconductor wafer
US10982324B2 (en) * 2016-06-28 2021-04-20 Siltronic Ag Method and device for producing coated semiconductor wafers
CN107978552A (zh) * 2016-10-25 2018-05-01 纽富来科技股份有限公司 气相生长装置、环状支架以及气相生长方法
WO2018192902A1 (de) * 2017-04-20 2018-10-25 Siltronic Ag Suszeptor zum halten einer halbleiterscheibe mit orientierungskerbe sowie abscheideverfahren
US10991614B2 (en) 2017-04-20 2021-04-27 Siltronic Ag Susceptor for holding a semiconductor wafer with an orientation notch during the deposition of a layer on a front side of the semiconductor wafer and method for depositing the layer by using the susceptor
CN110578166A (zh) * 2019-10-15 2019-12-17 上海新昇半导体科技有限公司 外延生长设备和外延生长方法
US20220205134A1 (en) * 2020-12-31 2022-06-30 Globalwafers Co., Ltd. Systems and methods for a preheat ring in a semiconductor wafer reactor

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Publication number Publication date
JP2010040534A (ja) 2010-02-18
JP5092975B2 (ja) 2012-12-05
US20140290564A1 (en) 2014-10-02
US9123759B2 (en) 2015-09-01

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