US20100019256A1 - Light emitting device with electron blocking combination layer - Google Patents

Light emitting device with electron blocking combination layer Download PDF

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Publication number
US20100019256A1
US20100019256A1 US12/506,688 US50668809A US2010019256A1 US 20100019256 A1 US20100019256 A1 US 20100019256A1 US 50668809 A US50668809 A US 50668809A US 2010019256 A1 US2010019256 A1 US 2010019256A1
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United States
Prior art keywords
layer
electron blocking
thickness
alingan
light emitting
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Abandoned
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US12/506,688
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English (en)
Inventor
Peng Yi Wu
Shih Cheng Huang
Po Min Tu
Ying Chao Yeh
Wen Yu Lin
Chih Peng Hsu
Shih Hsiung Chan
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Advanced Optoelectronic Technology Inc
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Advanced Optoelectronic Technology Inc
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Assigned to ADVANCED OPTOELECTRONIC TECHNOLOGY INC. reassignment ADVANCED OPTOELECTRONIC TECHNOLOGY INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHAN, SHIH HSIUNG, HSU, CHIH PENG, HUANG, SHIH CHENG, LIN, WEN YU, TU, PO MIN, WU, PENG YI, YEH, YING CHAO
Publication of US20100019256A1 publication Critical patent/US20100019256A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Definitions

  • the present invention relates to an electrical product, and more particularly, to a light emitting device.
  • the phenomenon of electron overflow not only reduces the lighting efficiency of a device, but also increases the temperature so that the working life of the device is affected. Therefore, it is very important for manufacturing the light emitting device to effectively reduce electron overflow.
  • FIG. 1 is a schematic cross-sectional diagram of a conventional light emitting device made of GaN group semiconductor. As shown in FIG. 1 , the conventional light emitting device comprises an n-type GaN layer 102 , an active layer 112 , and a p-type GaN layer 122 .
  • FIG. 2 is schematic energy diagram of each of several band gaps in accordance with FIG. 1 .
  • the upper portion of FIG. 2 shows the energy of an electron path, and the lower portion of FIG. 2 shows the energy of a hole path.
  • the mobility of an electron is larger than that of a hole, and the concentration of electrons is also larger than that of holes. Therefore, there are excessive electrons (e, the upper portion of FIG. 2 ) overflowing the active layer 112 where it is close to the p-type GaN layer 122 .
  • the occurrence of the electron overflow reduces the possibility of radiation recombination.
  • U.S. Pat. No. 7,067,838 and U.S. Pat. No. 7,058,105 respectively provide a light emitting device employing GaN group semiconductor. These light emitting devices comprise a barrier layer in which the energy of the band gap is larger than those of the other layers so as to reduce the electron overflow. It is worth noticing that all of these prior arts use AlGaN as a barrier layer. Because of the lattice mismatch of AlGaN and GaN, the content of Al needs to be increased so as to have a sufficient energy barrier for blocking electron overflow. However, when the content of Al is increased, the light emitting device accordingly suffers increased stress. If the thickness of the layer is larger than a certain critical thickness, the stress would be released to crack the device. Furthermore, as the content of Al is increased, the quality of crystal lattices degrades, and accordingly, the concentration of holes of AlGaN is difficult to increase.
  • a light emitting device is provided to reduce the occurrence of electron overflow and also to avoid the disadvantages of the aforesaid stress release.
  • the present invention provides a light emitting device with an electron blocking combination layer, which comprises an active layer, an n-type GaN layer and a p-type GaN layer.
  • the light emitting device with an electron blocking combination layer further comprises a first Group III-V semiconductor layer and a second Group III-V semiconductor layer.
  • the two kinds of Group III-V semiconductor layers have different band gaps, and are periodically and repeatedly deposited on the active layer to form an electron blocking combination layer with higher energy barrier so as to block excessive electrons from overflowing the active layer.
  • the electron blocking combination layer can prevent electron overflow so that the possibility of the recombination of electrons and holes within the active layer is increased and photons are accordingly released. Furthermore, the combination of Group III-V semiconductor layers with various crystal lattice constants has the effect of stress compensation so that the accumulated stress between it and the active layer is reduced.
  • FIG. 1 is a schematic cross-sectional diagram of a conventional light emitting device made of GaN group semiconductor
  • FIG. 2 is schematic energy diagram of each of band gaps in accordance with FIG. 1 ;
  • FIG. 3 is a cross-sectional diagram of a light emitting device with an electron blocking combination layer in accordance with the present invention.
  • FIG. 4 is schematic energy diagram of each of several band gaps in accordance with FIG. 3 .
  • One aspect of the present invention proposes a light emitting device with an electron blocking combination layer.
  • a detailed description of a number of method steps and components is provided below.
  • the practice of the present invention is not limited to any specific detail of a light emitting device that is familiar to one skilled in the art.
  • components or method steps which are well-known are not described in detail in order to avoid unnecessary limitations.
  • a preferred embodiment of the present invention will be described in detail. However, in addition to the preferred embodiment described, other embodiments can be broadly employed, and the scope of the present invention is not limited by any of the embodiments, but should be defined in accordance with the following claims and their equivalent.
  • FIG. 3 is a cross-sectional diagram of a light emitting device with an electron blocking combination layer in accordance with the present invention.
  • FIG. 4 is schematic energy diagram of each of several band gaps in accordance with FIG. 3 .
  • a light emitting device with an electron blocking combination layer comprises a substrate 410 , a buffer layer 420 on the substrate 410 , an n-type GaN layer 202 on the buffer layer 420 , an active layer 212 and a p-type GaN layer 222 .
  • FIG. 4 shows an electron (e ⁇ ) as an example.
  • the material of the aforesaid substrate can be Al 2 O 3 (sapphire), SiC, Si, GaN, AIN, LiAlO 2 , LiGaO 2 , or ZnO.
  • the aforesaid light emitting device with an electron blocking combination layer can further comprise first Group III-V semiconductor layers 232 , 242 and second Group III-V semiconductor layers 234 , 244 .
  • the two kinds of Group III-V semiconductor layers have different band gaps, and are periodically and repeatedly deposited on the active layer 212 to form an electron blocking combination layer 230 with higher energy barrier (higher than the energy barrier of the active layer) so as to block excessive electrons (e ⁇ ) from overflowing the active layer 212 .
  • the electron blocking combination layer 230 is interposed between the p-type GaN layer 222 and the active layer 212 .
  • the electron blocking combination layer 230 acts as a wall to rebound the electrons (e ⁇ ) into the quantum wells of the active layer 212 .
  • the electrons (e ⁇ ) are recombined with holes so that photons are released. Therefore, the electron blocking combination layer 230 can increase the recombination rate of the electrons and the holes so as to avoid the phenomenon of electron overflow.
  • the aforesaid electron barrier 230 can also be deemed as a combination epitaxy structure 230 .
  • the combination epitaxy structure 230 comprises the combination of a first AlInGaN (Al x In y Ga 1-x-y N) layer 232 and a second AlInGaN (Al u In v Ga 1-u-v N) layer 234 , where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, x+y ⁇ 1, 0 ⁇ u ⁇ 1, 0 ⁇ v ⁇ 1, and u+v ⁇ 1.
  • the electron blocking combination layer 230 can effectively increase the concentration of holes.
  • the first AlInGaN layer 232 has a first thickness
  • the second AlInGaN layer 234 has a second thickness
  • the first AlInGaN layer 232 is below the second AlInGaN layer 234 with bigger band gaps 332 (see FIG. 4 )
  • the second AlInGaN layer 234 is above the first AlInGaN layer 232 with smaller band gaps 332 (see FIG. 4 ).
  • the differences between the two kinds of AlInGaN layers 232 , 234 are the proportions of N, Ga, In, and Al.
  • One of the objectives of varying the proportions is make the band gap 332 of the first AlInGaN layer 232 be higher than the band gap 334 of the second AlInGaN layer 234 .
  • the proportion of the Al element is increased to make the band gap accordingly higher; and the proportion of the In element is increased to make the band gap accordingly lower.
  • the In element is important for the first AlInGaN layer 232 and the second AlInGaN layer 234 . That is, if there is no In element therein, the Al element has a large different constant of the crystal lattice for the active layer, and hence the conventional problem of stress release is likely to result.
  • the proportion of the In element causes the differences between the crystal lattice structures of the electron blocking combination layer 230 and the active layer 212 to be not so obvious, and can moderate the problem of stress release.
  • the aforesaid electron blocking combination layer 230 comprises a third AlInGaN layer 242 and a fourth AlInGaN layer 244 .
  • the aforesaid third AlInGaN layer 242 has a third thickness
  • the aforesaid fourth AlInGaN layer 244 has a fourth thickness.
  • the sum of the third thickness and the fourth thickness is equal to the sum of the first thickness and the second thickness.
  • the combination epitaxy structure further comprises a fifth AlInGaN layer 252 , a sixth AlInGaN layer 254 , a seventh AlInGaN layer 262 and an eighth AlInGaN layer 264 , where the total thickness of the fifth AlInGaN layer 252 and the sixth AlInGaN layer 254 is preferably equal to the sum of the first thickness and the second thickness. Furthermore, the total thickness of the seventh AlInGaN layer 262 and the eighth AlInGaN layer 264 is preferably equal to the sum of the first thickness and the second thickness.
  • AlInGaN does not limit the application of the prevent invention.
  • the AlInGaN can be replaced by the following materials which also are included in the scope of the present invention: GaN, AIN, InN, AlGaN, InGaN, and AlInN.
  • One of the advantages of the present invention is that the electron barrier can prevent the overflowing of electrons and rebound the electrons into the quantum wells of the active layer so that the electrons are recombined with holes to release photons. Furthermore, the combination of Group III-V semiconductor layers with various crystal lattice constants has the effect of stress compensation so that stress between the semiconductor layers and the active layer is reduced.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
US12/506,688 2008-07-24 2009-07-21 Light emitting device with electron blocking combination layer Abandoned US20100019256A1 (en)

Applications Claiming Priority (2)

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TW097128065 2008-07-24
TW097128065A TWI566431B (zh) 2008-07-24 2008-07-24 組合式電子阻擋層發光元件

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150021545A1 (en) * 2013-07-18 2015-01-22 Lg Innotek Co., Ltd. Light emitting device and lighting system
US20160181471A1 (en) * 2013-07-25 2016-06-23 Osram Opto Semiconductors Gmbh Optoelectronic Semiconductor Chip Comprising a Multi-Quantum Well Comprising at Least One High Barrier Layer
CN117476834A (zh) * 2023-12-28 2024-01-30 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101923670B1 (ko) * 2012-06-18 2018-11-29 서울바이오시스 주식회사 전자 차단층을 갖는 발광 소자
CN103952839B (zh) * 2014-04-15 2016-01-13 吴江明佳织造有限公司 喷水织机用废水回收装置
KR102227772B1 (ko) * 2014-08-19 2021-03-16 삼성전자주식회사 반도체 발광소자

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6744064B2 (en) * 2000-02-08 2004-06-01 Samsung Electro-Mechanics Co., Ltd. Nitride semiconductor light emitting device
US7058105B2 (en) * 2002-10-17 2006-06-06 Samsung Electro-Mechanics Co., Ltd. Semiconductor optoelectronic device
US7067838B1 (en) * 2004-04-16 2006-06-27 Nitride Semiconductors Co., Ltd. Gallium-nitride-based light-emitting apparatus

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2956623B2 (ja) * 1996-12-02 1999-10-04 日本電気株式会社 自励発振型半導体レーザ素子
JPH11243251A (ja) * 1998-02-26 1999-09-07 Toshiba Corp 半導体レーザ装置
JP2000277860A (ja) * 1999-03-24 2000-10-06 Sanyo Electric Co Ltd 半導体レーザ素子
JP2002076519A (ja) * 2000-08-30 2002-03-15 Fujitsu Ltd 半導体レーザ
JP3763754B2 (ja) * 2001-06-07 2006-04-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
JP2003031552A (ja) * 2001-07-19 2003-01-31 Sharp Corp 窒化物半導体処理方法および窒化物半導体並びに窒化物半導体素子
JP2003086533A (ja) * 2001-09-13 2003-03-20 Sharp Corp 窒化物半導体素子および半導体装置
JP2003209324A (ja) * 2002-01-17 2003-07-25 Mitsubishi Electric Corp 半導体光素子及びその製造方法
TWI268633B (en) * 2004-12-06 2006-12-11 Sensor Electronic Technology Inc Nitride-based light emitting heterostructure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6744064B2 (en) * 2000-02-08 2004-06-01 Samsung Electro-Mechanics Co., Ltd. Nitride semiconductor light emitting device
US7058105B2 (en) * 2002-10-17 2006-06-06 Samsung Electro-Mechanics Co., Ltd. Semiconductor optoelectronic device
US7067838B1 (en) * 2004-04-16 2006-06-27 Nitride Semiconductors Co., Ltd. Gallium-nitride-based light-emitting apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150021545A1 (en) * 2013-07-18 2015-01-22 Lg Innotek Co., Ltd. Light emitting device and lighting system
US9559257B2 (en) * 2013-07-18 2017-01-31 Lg Innotek Co., Ltd. Light emitting device and lighting system
US20160181471A1 (en) * 2013-07-25 2016-06-23 Osram Opto Semiconductors Gmbh Optoelectronic Semiconductor Chip Comprising a Multi-Quantum Well Comprising at Least One High Barrier Layer
US9722140B2 (en) * 2013-07-25 2017-08-01 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip comprising a multi-quantum well comprising at least one high barrier layer
US10121936B2 (en) 2013-07-25 2018-11-06 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip comprising a multi-quantum well comprising at least one high barrier layer
CN117476834A (zh) * 2023-12-28 2024-01-30 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

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TWI566431B (zh) 2017-01-11
JP2010034549A (ja) 2010-02-12

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