TWI268633B - Nitride-based light emitting heterostructure - Google Patents

Nitride-based light emitting heterostructure

Info

Publication number
TWI268633B
TWI268633B TW094142836A TW94142836A TWI268633B TW I268633 B TWI268633 B TW I268633B TW 094142836 A TW094142836 A TW 094142836A TW 94142836 A TW94142836 A TW 94142836A TW I268633 B TWI268633 B TW I268633B
Authority
TW
Taiwan
Prior art keywords
heterostructure
nitride
light emitting
generating structure
light generating
Prior art date
Application number
TW094142836A
Other languages
Chinese (zh)
Other versions
TW200620719A (en
Inventor
Gaska Remigijus
Zhang Ianping
Shur Michael
Original Assignee
Sensor Electronic Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sensor Electronic Technology Inc filed Critical Sensor Electronic Technology Inc
Publication of TW200620719A publication Critical patent/TW200620719A/en
Application granted granted Critical
Publication of TWI268633B publication Critical patent/TWI268633B/en

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  • Semiconductor Lasers (AREA)

Abstract

An improved nitride-based light emitting heterostructure is provided. The nitride-based light emitting heterostructure includes an electron supply layer and a hole supply layer with a light generating structure disposed there between. The light generating structure includes a set of barrier layers, each of which has a graded composition and a set of quantum wells, each of which adjoins at least one barrier layer. Additional features, such as a thickness of each quantum well, can be selected/incorporated into the heterostructure to improve one or more of its characteristics. Further, one or more additional layers that include a graded composition can be included in the heterostructure outside of the light generating structure. The graded composition layer(s) cause electrons to lose energy prior to entering a quantum well in the light generating structure, which enables the electrons to recombine with holes more efficiently in the quantum well.
TW094142836A 2004-12-06 2005-12-05 Nitride-based light emitting heterostructure TWI268633B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US63382804P 2004-12-06 2004-12-06

Publications (2)

Publication Number Publication Date
TW200620719A TW200620719A (en) 2006-06-16
TWI268633B true TWI268633B (en) 2006-12-11

Family

ID=57808360

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094142836A TWI268633B (en) 2004-12-06 2005-12-05 Nitride-based light emitting heterostructure

Country Status (1)

Country Link
TW (1) TWI268633B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI479678B (en) * 2008-11-26 2015-04-01 Lg Innotek Co Ltd Light emitting device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI566431B (en) * 2008-07-24 2017-01-11 榮創能源科技股份有限公司 Semiconductor light emitting device having electron blocking complex layer
CN102299223A (en) * 2011-09-19 2011-12-28 厦门乾照光电股份有限公司 Epitaxial structure of light-emitting diode and manufacturing method thereof
TWI774349B (en) * 2021-04-29 2022-08-11 合晶科技股份有限公司 Semiconductor substrate structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI479678B (en) * 2008-11-26 2015-04-01 Lg Innotek Co Ltd Light emitting device

Also Published As

Publication number Publication date
TW200620719A (en) 2006-06-16

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