TW200620719A - Nitride-based light emitting heterostructure - Google Patents

Nitride-based light emitting heterostructure

Info

Publication number
TW200620719A
TW200620719A TW094142836A TW94142836A TW200620719A TW 200620719 A TW200620719 A TW 200620719A TW 094142836 A TW094142836 A TW 094142836A TW 94142836 A TW94142836 A TW 94142836A TW 200620719 A TW200620719 A TW 200620719A
Authority
TW
Taiwan
Prior art keywords
heterostructure
nitride
light emitting
generating structure
light generating
Prior art date
Application number
TW094142836A
Other languages
Chinese (zh)
Other versions
TWI268633B (en
Inventor
Gaska Remigijus
Zhang Ianping
Shur Michael
Original Assignee
Sensor Electronic Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sensor Electronic Tech Inc filed Critical Sensor Electronic Tech Inc
Publication of TW200620719A publication Critical patent/TW200620719A/en
Application granted granted Critical
Publication of TWI268633B publication Critical patent/TWI268633B/en

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

An improved nitride-based light emitting heterostructure is provided. The nitride-based light emitting heterostructure includes an electron supply layer and a hole supply layer with a light generating structure disposed there between. The light generating structure includes a set of barrier layers, each of which has a graded composition and a set of quantum wells, each of which adjoins at least one barrier layer. Additional features, such as a thickness of each quantum well, can be selected/incorporated into the heterostructure to improve one or more of its characteristics. Further, one or more additional layers that include a graded composition can be included in the heterostructure outside of the light generating structure. The graded composition layer(s) cause electrons to lose energy prior to entering a quantum well in the light generating structure, which enables the electrons to recombine with holes more efficiently in the quantum well.
TW094142836A 2004-12-06 2005-12-05 Nitride-based light emitting heterostructure TWI268633B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US63382804P 2004-12-06 2004-12-06

Publications (2)

Publication Number Publication Date
TW200620719A true TW200620719A (en) 2006-06-16
TWI268633B TWI268633B (en) 2006-12-11

Family

ID=57808360

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094142836A TWI268633B (en) 2004-12-06 2005-12-05 Nitride-based light emitting heterostructure

Country Status (1)

Country Link
TW (1) TWI268633B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102299223A (en) * 2011-09-19 2011-12-28 厦门乾照光电股份有限公司 Epitaxial structure of light-emitting diode and manufacturing method thereof
TWI566431B (en) * 2008-07-24 2017-01-11 榮創能源科技股份有限公司 Semiconductor light emitting device having electron blocking complex layer
TWI774349B (en) * 2021-04-29 2022-08-11 合晶科技股份有限公司 Semiconductor substrate structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101064016B1 (en) * 2008-11-26 2011-09-08 엘지이노텍 주식회사 Light emitting device and manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI566431B (en) * 2008-07-24 2017-01-11 榮創能源科技股份有限公司 Semiconductor light emitting device having electron blocking complex layer
CN102299223A (en) * 2011-09-19 2011-12-28 厦门乾照光电股份有限公司 Epitaxial structure of light-emitting diode and manufacturing method thereof
TWI774349B (en) * 2021-04-29 2022-08-11 合晶科技股份有限公司 Semiconductor substrate structure

Also Published As

Publication number Publication date
TWI268633B (en) 2006-12-11

Similar Documents

Publication Publication Date Title
WO2006062880A3 (en) Nitride-based light emitting heterostructure
ATE483257T1 (en) ELECTROLUMINescent LIGHT SOURCE
WO2006098540A8 (en) Quantum dot light -emitting diode comprising inorganic electron transport layer
TW200730028A (en) Stability enhancement of opto-electronic devices
TW200612776A (en) Electroluminescence element
WO2009030981A3 (en) Long lifetime phosphorescent organic light emitting device (oled) structures
WO2009123763A3 (en) Light-emitting device including quantum dots
TW200731566A (en) Semiconductor light emitting device with lateral current injection in the light emitting region
TW200717873A (en) Quantum dot light emitting layer
EP1551206A4 (en) Organic electroluminescent device
TW200633288A (en) Organic electroluminescent device
TW200605723A (en) Organic electroluminescent device
TW200605708A (en) Fluorene derivative and organic electroluminescent device using same
TW200603665A (en) Organic light-emitting device
TW200735705A (en) Organic light emitting diode having high efficiency and process for fabricating the same
TW200638563A (en) Light emitting devices with active layers that extend into opened pits
WO2011159993A3 (en) Seep ultraviolet light emitting diode
WO2003073522A3 (en) Efficient light emitting diodes and laser diodes
HK1070182A1 (en) Light emitting component with organic layers
EP1734792A4 (en) Organic light emitting element
TW200735420A (en) Nitride semiconductor light-emitting element
TW200623953A (en) Organic electro-luminescent element
EP1933397A4 (en) Organic electroluminescent device and full color light-emitting device
TW200713640A (en) Electroluminescence light source
WO2010046788A8 (en) Radiation emitting device