US20090206360A1 - Nitride semiconductor light emitting device and method of manufacturing the same - Google Patents

Nitride semiconductor light emitting device and method of manufacturing the same Download PDF

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US20090206360A1
US20090206360A1 US12/193,992 US19399208A US2009206360A1 US 20090206360 A1 US20090206360 A1 US 20090206360A1 US 19399208 A US19399208 A US 19399208A US 2009206360 A1 US2009206360 A1 US 2009206360A1
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nitride semiconductor
layer
light emitting
type
electrode
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Akihisa Terano
Aki Takei
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Opnext Japan Inc
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Opnext Japan Inc
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Assigned to OPNEXT JAPAN, INC. reassignment OPNEXT JAPAN, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TAKEI, AKI, TERANO, AKIHISA
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Priority to US13/478,024 priority Critical patent/US8686442B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Definitions

  • the present invention relates to a nitride semiconductor light emitting device such as light emitting diode (LED), laser diode (LD) or the like that operates in the visible to ultraviolet wavelength region, and a method of manufacturing the same.
  • LED light emitting diode
  • LD laser diode
  • Nitride semiconductors represented by gallium nitride (GaN) have been used as a material for light emitting elements capable of generating a light in the edge to ultraviolet region.
  • a light emitting element using a nitride semiconductor is provided with a light emitting layer (typically known as an active layer) having a multiple quantum well structure, and p-type and n-type nitride semiconductor layers for current feeding that are disposed above and below the light emitting layer.
  • laser diodes With recent advances in the development of GaN substrate, laser diodes now demonstrate high performance of laser, high quality and high yield, which have been made possible by epitaxially growing a n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer sequentially on a n-type conductive GaN substrate such that dislocation density or defects within an epilayer can be reduced compared with epitaxial growth on a conventional sapphire substrate and the cleaved end-face of a flat resonator can easily be formed.
  • an n-type GaN substrate has shorten the manufacturing process of laser diodes by bringing a change in the structure of them, i.e., forming an n-type ohmic electrode on the rear side of the n-type GaN substrate, not on the exposed surface of an n-type nitride semiconductor layer provided to the core of an epitaxial growth layer by the conventional semiconductor process.
  • Japanese Patent Application Publication No. 07-45867 disclosed the primary use of Ti/Al electrode as an ohmic electrode at the bottom of an n-type nitride semiconductor, and explained that desirable ohmic contact with an n-type layer could be obtained by annealing the adhered electrode at high temperature.
  • Japanese Patent Application Publication No. 2006-59933 disclosed an ohmic electrode to be formed on the surface of an n-type nitride semiconductor, the ohmic electrode being provided with, from the near side the n-type nitride semiconductor, a first layer with thickness of 10 to 70 nm consisting of Al and/or an Al alloy, a second layer with thickness of 10 to 300 nm consisting of one or more metals selected from Pd, Ti, Nb, Mo and W for example, which have higher melting point than that of the first layer (Al, Al alloy) and the third layer (Au), and a third layer with thickness of 100 to 1000 nm consisting of Au, in sequential order.
  • the ohmic electrode was then subjected to annealing at 350 to 600° C. to obtain desirable ohmic property against the n-type nitride semiconductor as well as a smooth and lustrous surface and desirable wire bonding property.
  • Patent Document 2 it is important that Pd with thickness of 50 nm is used as metal for the second layer, the ohmic property is checked on using, as a parameter, the thickness of a metal film containing Al of the first layer as a main ingredient, and the first layer film thickness is limited to a range of 10 nm to 70 nm so as to reduce contact resistance.
  • Japanese Patent Application Publication No. 2004-221493 disclosed an electrode to be laminated on the surface of an n-type nitride semiconductor layer, the electrode being provided with, from the bottom, an Ti layer (e.g., 30 nm), an Al layer (e.g., 150 nm), a Mo layer (e.g., 30 nm), a Pt layer (e.g., 15 nm), and a Au layer (e.g., 200 nm) in sequential order, such that delamination of the Au layer is suppressed and diffusion of the Au layer into the semiconductor layer side can be nearly completely suppressed.
  • an Ti layer e.g., 30 nm
  • Al layer e.g., 150 nm
  • a Mo layer e.g., 30 nm
  • Pt layer e.g., 15 nm
  • Au layer e.g. 200 nm
  • the inventors Based on the kinds of metals used for the diffusion barrier layer described in Japanese Patent Application Publication Nos. 2006-59933 and 2004-221493, the inventors formed an electrode having a five-layer laminate structure on an n-type nitride semiconductor layer, which is provided with an Al layer as the first layer with thickness of 100 nm, a diffusion barrier layer having a three-layer structure composed of a Mo layer with thickness of 50 nm, a Ti layer with thickness of 100 nm and a Pt layer with thickness of 50 nm, and lastly a Au layer with thickness of 300 nm in sequential order.
  • the electrode then went though an annealing process at 500° C. under nitrogen atmosphere. It turned out that, as shown in FIG. 7 , the electrode surface had a severely rugged or uneven area accompanied by discoloration.
  • the surface area was analyzed with the application of Auger electron spectroscopy, the analysis result of which is shown in FIG. 2 .
  • the inventors identified Al, which was supposed to be at the undermost layer of the electrode, on the uppermost layer of the electrode instead and observed the presence of oxygen in addition to Al there, which implies that oxidized Al was formed on the uppermost layer of the electrode.
  • the uneven surface area was also found even when only the Al film of the first layer was made thinner to about 30 nm, and the uneven, discolored area has expanded in size if annealing temperature was raised.
  • an object of the present invention to provide a nitride semiconductor light emitting device having an n electrode which demonstrates a satisfactory ohmic contact to an n-type nitride semiconductor and unlike in the related art techniques, which does not make the electrode surface rough even after a high-temperature annealing process, and a method of manufacturing the same.
  • the present invention therefore presents several embodiments of such a device and its manufacturing method in order to obtain satisfactory ohmic contacts to an n-type nitride semiconductor, and some of them are as follows.
  • a nitride semiconductor light emitting device including: an n-type nitride semiconductor layer provided over a substrate; a light emitting layer provided over the n-type nitride semiconductor layer, for emitting light of a predetermined wavelength; a p-type nitride semiconductor layer provided over the light emitting layer; an n-electrode electrically connected to the n-type nitride semiconductor layer; and a p-electrode electrically connected to the p-type nitride semiconductor layer, wherein the n-electrode has a laminate structure composed of a first layer containing aluminum nitride and having a thickness not less than 1 nm or less than 5 nm, a second layer containing one or more metals selected from Ti, Zr, Hf, Mo, and Pt, and a third layer made of Au, from the near side of the n-type nitride semiconductor in order of mention, and wherein junction between the n-electrid
  • a method of manufacturing a nitride semiconductor light emitting device including the steps of: forming, over a substrate, an n-type nitride semiconductor layer containing at least an n-type impurity; forming, over the n-type nitride semiconductor layer, a light emitting layer for emitting light with a predetermined wavelength; forming, over the light emitting layer, a p-type nitride semiconductor layer containing a p-type impurity; forming, in contact with the p-type nitride semiconductor layer, a p-electrode; forming, in contact with the n-type nitride semiconductor, an n-electrode having a laminate structure composed of a first layer containing aluminum nitride and having a thickness not less than 1 nm or less than 5 nm, a second layer containing one or more metals selected from Ti, Zr, Hf, Mo, and Pt, and a third layer made of
  • n-electrode By using such an n-electrode, satisfactory ohmic contacts to an n-type nitride semiconductor were obtained, without using Al metals. At the same time, even when the n-electrode undergoes a high-temperature annealing process, diffusion of Al as in the related art techniques does not occur any more. Accordingly, the n-electrode and the Au-based solder/the Au wire are bonded in practically sufficient junction strength during the device mount process, and this in turn makes it possible to manufacture nitride semiconductor light emitting devices at a high yield.
  • FIG. 3A shows I-V characteristics between electrodes of a sample prepared to verify functions and effects of the present invention
  • FIG. 3C shows I-V characteristics between electrodes of a sample prepared to verify functions and effects of the present invention
  • FIG. 3D shows I-V characteristics between electrodes of a sample prepared to verify functions and effects of the present invention
  • FIG. 4 graphically shows the result of evaluation on the dependence of non-contact resistivity ( ⁇ c ) of a sample prepared to verify functions and effects of the present invention upon annealing temperature;
  • FIG. 6 is a schematic cross-sectional view of a nitride semiconductor light emitting diode in accordance with a second embodiment of the present invention.
  • FIG. 1 is a schematic cross-sectional view of a nitride semiconductor laser in accordance with one embodiment of the present invention.
  • an n-type buffer layer 2 made of Si-doped GaN
  • an n-type clad layer 3 made of Si-doped AlGaN
  • an n-type guide layer 4 made of Si-doped GaN
  • an active layer 5 made of InGaN in a multiple quantum well structure
  • an electronic block layer 6 made of Mg-doped AlGaN (composition ratio of Al is 7%)
  • a p-type clad layer 7 made of Mg-doped AlGaN (composition ratio of Al is 4%)
  • a p-type contact layer 8 made of Mg-doped GaN were grown sequentially in the order of mention by molecular organic chemical vapor deposition (MOCVD).
  • a SiO 2 film 9 with thickness of 250 nm was formed over the front side of the substrate by a well-known insulation film formation method such as CVD or sputtering. Then, a photoresist pattern was formed by photolithography in a manner that only a region at the uppermost portion of the ridge was open. With this photoresist pattern as an etching mask, the open region was etched to expose the p-type contact layer 8 at the core portion of the ridge.
  • the etching process is carried out, either by wet etching in use of HF-based solution or by dry etching in use of fluorine-based gas (e.g., CF 4 or the like).
  • fluorine-based gas e.g., CF 4 or the like.
  • a p-electrode 10 made of Ni/Mo/Au is formed over the p-type contact layer 8 at the core portion of the ridge and over the SiO 2 film around it.
  • the n-type GaN substrate 1 was polished and thinned, starting from the rear side of the substrate, by a well-known polishing technique until the substrate has a thickness of about 100 ⁇ m.
  • a 3 nm-thick aluminum nitride (AlN) 101 was first adhered by sputtering, and then a 50 nm-thick Ti (titanium) film 102 , a 50 nm-thick Pt (platinum) film 103 , and a 500 nm-thick Au (gold) film 104 were adhered sequentially in order of mention by electron beam evaporation for example. Later, the substrate was annealed at 500° C. for 10 minutes under nitrogen atmosphere.
  • a four-layer n-electrode 11 making an ohmic contact to the n-type GaN substrate 1 is formed in a four-layer laminate structure composed of AlN/Ti/Pt/Au from the bottom in order of mention.
  • the n-electrode 11 was cleaved perpendicularly to the length direction of the ridge to form about 600 ⁇ m long bar-shaped resonator cross-sections on both sides, and a single-side coating film 12 having a desired reflectance and transmission factor is formed on both cross-sections.
  • the bars were made into a chip by cleavage to complete manufacturing of a nitride semiconductor laser that has the cross-sectional structure of FIG. 1 and the configuration shown in FIG. 5 .
  • the laser chip With the p-electrode side of the laser chip as a mount face, the laser chip was mounted, by dye-bonding, on a sub-mount face that is made of SiC coated with a Au—Sn solder, and the sub-mount having the laser chip mounted thereon is mounted further on a stem.
  • the p-electrode side of the laser chip facing upward and the electrode side on the sub-mount to which the n-electrode is electrically connected are properly bonded and wired by Au wires, thereby completing the manufacture of a nitride semiconductor laser device.
  • the inventors conducted a pull test on the Au wire bonded to the n-electrode surface. It turned out that breaking strength for all the 50 laser devices was 5 g or more, and all the broken portions, if any, were found along the Au wires.
  • I-V (current-voltage) characteristics of each were evaluated through an external input terminal to which Au wire of each laser device is connected. There was no sharp increase in direct resistance or non-uniformity in increasing voltage, and electrical conduction between the electrode and the Au wire was also satisfactory.
  • MOCVD molecular organic chemical vapor deposition
  • TLM transmission line model
  • Aluminum nitride to become the undermost layer of an electrode was formed by sputtering at three different film thicknesses, e.g., 3 nm, 5 nm, and 8 nm, so as to prepare three kinds of samples. At this time, the substrate was not heated.
  • a Ti (titanium) layer with film thickness of 50 nm, a Pt (platinum) layer with film thickness of 50 nm, and a Au (gold) layer with film thickness of 300 nm were deposited by electron beam evaporation.
  • the photoresist, unnecessary metal films and the aluminum nitride film were removed by a well-known lift-off method, such that the samples were prepared to get ready for TLM measurement.
  • the four samples were then annealed at a temperature range of 400° C. to 550° C. under nitrogen atmosphere, and I-V characteristics between electrodes with the interelectrode gap of 20 ⁇ m were evaluated (refer to FIGS. 3A through 3D ).
  • FIG. 3A shows characteristics of only the Ti/Pt/Au electrode without having aluminum nitride
  • FIGS. 3B , 3 C, and 3 D show characteristics of an electrode that is formed by laying Ti/Pt/Au over aluminum nitride (hereinafter abbreviated as AlN in the case of describing a laminate structure) of the undermost layer in different film thicknesses of 3 nm, 5 nm, and 8 nm, respectively.
  • AlN aluminum nitride
  • FIG. 4 shows evaluation results on the dependency of non-contact resistivity ( ⁇ c ) calculated in use of resistance value obtained from the I-V characteristics upon annealing temperature.
  • ⁇ c seems to increase along with an increase in the film thickness of aluminum nitride
  • the aluminum nitride film should be at least 5 nm thick to show the I-V characteristics described above and to obtain ohmic properties applicable to a light emitting device such as a laser device.
  • a lower limit of the thickness of an aluminum nitride film to be adhered would be around 1 nm which is the same as the limit set based on the conventional evaluation on the film thickness.
  • ohmic properties are expected to improve even with the presence of thin aluminum nitride islands, not necessarily in film form.
  • the substrate in order to grow aluminum nitride on a substrate by a conventional epitaxial growth method such as MOVPE, the substrate needs to be heated at 1200° C. or higher. If a metal film is formed on that substrate surface, or if the substrate has been thinned, it is highly possible that the growth path is contaminated by metal(s) or the substrate is cracked or split. Because of these or other adverse effects, the method is not likely to be selected in reality.
  • the active layer could be broken due to an occurrence of diffusion and segregation of In.
  • the present invention is characterized in that the same function and effect are obtained from aluminum nitride that is formed by a film formation method such as sputter in general as part of the semiconductor processing process, and that aluminum nitride can be formed by other methods like CVD or sublimation besides the sputtering method.
  • any kind of metal materials or metal compound materials may be used as long as they are adhesive to aluminum nitride.
  • FIG. 6 is a schematic view of a nitride semiconductor light emitting diode in accordance with another embodiment of the present invention. An overall manufacturing method thereof will now be explained below.
  • a multiple layer structure including a buffer layer 21 made of undoped GaN, a Si-doped n-type GaN layer 22 having carrier concentration of 2 ⁇ 10 18 cm ⁇ 3 and film thickness of 5 ⁇ m, Si-doped n-type AlGaN clad layer 23 , an active layer 24 made of In b Ga 1 ⁇ b N (0 ⁇ b ⁇ 0.1), a p-type clad layer 25 made of Mg-doped AlGaN having Mg doping concentration of 3.0 ⁇ 10 19 cm ⁇ 3 and film thickness of 40 nm, and a p-type contact layer 26 made of Mg-doped GaN, the layers being sequentially grown by molecular organic chemical vapor deposition (MOCVD).
  • MOCVD molecular organic chemical vapor deposition
  • a desired region was etched, starting from the surface side of the substrate 20 , by a well-known photolithography technique and by dry etching using a chlorine based gas, so as to expose the Si-doped n-type GaN layer 22 .
  • AlN aluminum nitride
  • AlN aluminum nitride
  • a 30 nm-thick Hf (hafnium) film 202 , a 50 nm-thick Mo (molybdenum) film 203 , a 100 nm-thick Zr (zirconium) film 204 , a 100 nm-thick Pt (platinum) film 205 , and a 500 nm-thick Au (gold) film 206 were further deposited on the AlN film 201 by electron beam evaporation, and then annealed at 450° C.
  • an n-electrode 27 having the six-layer laminate structure of AlN/Hf/Mo/Zr/Pt/Au and making an ohmic contact to the Si-doped n-type GaN layer 22 , is thus formed.
  • a p-type ohmic electrode 28 is formed by forming a laminate composed of 30 nm-thick Pd film/70-nm-thick Pt film/300-nm Au film at a desired position on a second p-type clad layer 26 in a non-etched region.
  • the uppermost surface of the n-electrode 27 and the uppermost surface of the p-electrode 28 are roughly the same height.
  • the rear side of the sapphire substrate 20 was made thinner by diamond polishing particles until it becomes as thin as 200 ⁇ m, and, as a final process, the polished face was subjected to mirror-like finishing and was made into a chip of desired size, thereby completing the manufacture of a nitride semiconductor LED.
  • the LED uses light that is emitted from the mirror-like polished rear side through the sapphire substrate, patterning, by the Au—Sn solder, should be performed in advance on the mount where the LED is to be mounted, and for the patterned Au—Sn solder, the mount process was carried out in a manner that the Au—Sn solder pattern was matched with each of the p- and n-electrodes.
  • a total of 30 LED devices were manufactured following the above process, and I-V characteristics of each LED were evaluated through an external input terminal. It turned out that an average voltage necessary to obtain 50 mA current was 3.25V. Also, there was no sharp increase in voltage and current was obtained for each.
  • any substrate material say, GaN, SiC, Si, or the like can also be used as long as a nitride semiconductor can grow reasonably thereon.
  • a variety of substrate materials may be used, depending on the structure of LED to be manufactured.
  • the present invention is not limited thereto but any suitable metal laminate of different film thickness depending on the material used for bonding, e.g., Au wire or Au—Sn solder, can also be used.
  • the embodiments of the present invention have been mainly focused on the manufacturing method of a nitride semiconductor light emitting device, but the structure of a specific nitride semiconductor is not limited to those embodiments but can be varied based on the configuration or required function for a device to be manufactured.
  • n-electrode of the invention By applying the n-electrode of the invention to a nitride semiconductor light emitting device, satisfactory ohmic contacts to an n-type nitride semiconductor can be obtained, and the uppermost surface of the electrode even after high-temperature annealing still retains Au suitable for the mount process.

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113235047A (zh) * 2020-12-25 2021-08-10 至芯半导体(杭州)有限公司 一种AlN薄膜的制备方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5526712B2 (ja) * 2009-11-05 2014-06-18 豊田合成株式会社 半導体発光素子
US8716743B2 (en) * 2012-02-02 2014-05-06 Epistar Corporation Optoelectronic semiconductor device and the manufacturing method thereof
US9419156B2 (en) 2013-08-30 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Package and method for integration of heterogeneous integrated circuits
US9099623B2 (en) 2013-08-30 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Manufacture including substrate and package structure of optical chip
JP7146589B2 (ja) * 2018-11-15 2022-10-04 日機装株式会社 半導体発光素子および半導体発光素子の製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563422A (en) * 1993-04-28 1996-10-08 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor device and method of producing the same
US20020031153A1 (en) * 1996-10-30 2002-03-14 Atsuko Niwa Optical information processing equipment and semiconductor light emitting device suitable therefor
US6459100B1 (en) * 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
US20020179005A1 (en) * 1999-05-10 2002-12-05 Masayoshi Koike Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
US7015053B2 (en) * 1999-03-04 2006-03-21 Nichia Corporation Nitride semiconductor laser device
US20060124956A1 (en) * 2004-12-13 2006-06-15 Hui Peng Quasi group III-nitride substrates and methods of mass production of the same
US20070034883A1 (en) * 2005-03-14 2007-02-15 Yasuo Ohba Light emitting device
US20070141823A1 (en) * 2005-12-12 2007-06-21 Kyma Technologies, Inc. Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04253378A (ja) * 1991-01-29 1992-09-09 Sanyo Electric Co Ltd 光起電力装置の製造方法
JP2783349B2 (ja) 1993-07-28 1998-08-06 日亜化学工業株式会社 ｎ型窒化ガリウム系化合物半導体層の電極及びその形成方法
JP2004140052A (ja) * 2002-10-16 2004-05-13 Sanyo Electric Co Ltd 電極構造およびその製造方法
JP2004214530A (ja) * 2003-01-08 2004-07-29 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型化合物半導体装置の製造方法
JP4508534B2 (ja) 2003-01-17 2010-07-21 シャープ株式会社 窒化物半導体のための電極構造及びその作製方法
JP4733371B2 (ja) 2004-08-18 2011-07-27 三菱化学株式会社 ｎ型窒化物半導体用のオーミック電極およびその製造方法
JP4916434B2 (ja) * 2005-03-16 2012-04-11 パナソニック株式会社 窒化物半導体装置及びその製造方法
KR100706952B1 (ko) * 2005-07-22 2007-04-12 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자 및 그 제조방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563422A (en) * 1993-04-28 1996-10-08 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor device and method of producing the same
US20020031153A1 (en) * 1996-10-30 2002-03-14 Atsuko Niwa Optical information processing equipment and semiconductor light emitting device suitable therefor
US6459100B1 (en) * 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
US7015053B2 (en) * 1999-03-04 2006-03-21 Nichia Corporation Nitride semiconductor laser device
US20020179005A1 (en) * 1999-05-10 2002-12-05 Masayoshi Koike Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
US20060124956A1 (en) * 2004-12-13 2006-06-15 Hui Peng Quasi group III-nitride substrates and methods of mass production of the same
US20070034883A1 (en) * 2005-03-14 2007-02-15 Yasuo Ohba Light emitting device
US20070141823A1 (en) * 2005-12-12 2007-06-21 Kyma Technologies, Inc. Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113235047A (zh) * 2020-12-25 2021-08-10 至芯半导体(杭州)有限公司 一种AlN薄膜的制备方法

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