US20090103064A1 - Maintenance method, exposure method and apparatus and device manufacturing method - Google Patents

Maintenance method, exposure method and apparatus and device manufacturing method Download PDF

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Publication number
US20090103064A1
US20090103064A1 US12/314,317 US31431708A US2009103064A1 US 20090103064 A1 US20090103064 A1 US 20090103064A1 US 31431708 A US31431708 A US 31431708A US 2009103064 A1 US2009103064 A1 US 2009103064A1
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Prior art keywords
liquid
exposure apparatus
substrate
maintenance method
contact portion
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Abandoned
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US12/314,317
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English (en)
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Yasushi Yoda
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Nikon Corp
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Nikon Corp
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Publication of US20090103064A1 publication Critical patent/US20090103064A1/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus

Definitions

  • the present invention relates to a maintenance technique for an exposure apparatus which exposes a substrate with an exposure light via a liquid.
  • the present invention also relates to an exposure technique and a technique for producing a device using the maintenance technique.
  • a microdevice which includes a semiconductor device, a liquid crystal display device, etc. is produced by the so-called photolithography technique wherein a pattern, which is formed on a mask such as a reticle, is transferred onto a substrate such as a wafer which is coated with a resist (photosensitive material).
  • a pattern which is formed on a mask such as a reticle
  • a substrate such as a wafer which is coated with a resist (photosensitive material.
  • the exposure apparatus include an exposure apparatus (so-called stepper) of the reduction projection type of the step-and-repeat system, an exposure apparatus (so-called scanning stepper) of the reduction projection type of the step-and-scan system, etc.
  • the exposure apparatus of this type it has been carried out to shorten the wavelength of the exposure light and increase the numerical aperture (NA) of the projection optical system (realize the large NA) in order to respond to such a request that the higher resolution (resolving power) is demanded year by year as the pattern becomes fine and minute in accordance with the realization of the high integration of the semiconductor device or the like.
  • NA numerical aperture
  • the resolution of the projection optical system is improved, while the depth of focus is consequently decreased and narrowed. Therefore, if such a situation is continued, then the depth of focus is too narrowed and it is feared that the focus margin may be insufficient during the exposure operation.
  • an exposure apparatus which utilizes the liquid immersion method, has been developed in order to provide such a method that the exposure wavelength is substantially shortened and the depth of focus is widened as compared with those obtained in the air (see, for example, International Publication No. 99/49504).
  • the exposure is performed in such a state that the liquid immersion area is formed by filling a space between the lower surface of the projection optical system and a surface of the substrate (substrate surface) with a liquid including water, organic solvents, etc.
  • the resolution can be improved and the depth of focus can be magnified about n times by utilizing the fact that the wavelength of the exposure light is 1/n-fold in the liquid as compared with the wavelength in the air (n represents the refractive index of the liquid, which is, for example, about 1.2 to 1.6).
  • the exposure process is performed by using the liquid immersion method as described above, then the exposure is performed for the substrate while supplying the liquid to a liquid immersion area formed between the projection optical system and the substrate from a certain or predetermined liquid supply mechanism, and the liquid of a liquid immersion area is recovered by a certain or predetermined liquid recovery mechanism.
  • a minute foreign matter (particles) including the resist residue, etc. might be gradually accumulated during the exposure based on the liquid immersion method on a portion which comes into contact with the liquid (liquid contact portion), for example, on the flow passages for the liquid of the liquid supply mechanism and the liquid recovery mechanism.
  • an object of the present invention is to provide an efficient maintenance technique for an exposure apparatus which performs the exposure by the liquid immersion method.
  • Another object of the present invention is to provide an exposure technique and a technique for producing a device to which the maintenance technique is applicable with ease.
  • Still another object of the present invention is to provide a cleaning technique, an exposure technique, and a technique for producing a device, wherein it is possible to easily clean or wash the liquid contact portion which comes into contact with the liquid.
  • a first maintenance method is a maintenance method for an exposure apparatus which forms a liquid immersion space by filling a first liquid between an optical member and a substrate and which exposes the substrate with an exposure light via the optical member and the first liquid, the maintenance method comprising: a moving step of arranging a movable member to be opposite to or face a liquid immersion space-forming member which forms the liquid immersion space with the first liquid; a liquid immersion step of forming the liquid immersion space with the first liquid on the movable member by using the liquid immersion space-forming member; and a cleaning step of jetting a second liquid toward an area including at least a part of a liquid contact portion, which comes into contact with the first liquid, from a side of the movable member to clean the liquid contact portion.
  • the present invention upon performing the exposure by the liquid immersion method, at least a part of the foreign matter adhered to the liquid contact portion can be easily removed together with the second liquid.
  • this procedure by forming the liquid immersion space with the first liquid previously or at least partially concurrently, it is possible to easily remove the foreign matter adhering to the liquid contact portion. Therefore, it is possible to efficiently perform the maintenance for the mechanism which supplies and recovers the first liquid.
  • a second maintenance method is a maintenance method for an exposure apparatus which forms a liquid immersion space by filling a first liquid between an optical member and a substrate and which exposes the substrate with an exposure light via the optical member and the first liquid
  • the maintenance method comprising: a moving step of arranging a movable member to be opposite to a liquid immersion space-forming member which forms the liquid immersion space with the first liquid; an accumulating step of supplying the first liquid onto the movable member by using the liquid immersion space-forming member to accumulate the supplied first liquid; and a cleaning step of jetting the first liquid accumulated in the accumulating step toward an area including at least a part of a liquid contact portion, which comes into contact with the first liquid, to clean the liquid contact portion.
  • the present invention upon performing the exposure by the liquid immersion method, it is possible to easily remove at least a part of the foreign matter adhered to the liquid contact portion, together with the first liquid. Therefore, it is possible to efficiently perform the maintenance for the mechanism which supplies and recovers the first liquid. In this procedure, by supplying the first liquid, which is used during the liquid immersion exposure, previously or concurrently, it is possible to easily remove the foreign matter adhered to the liquid contact portion. Further, since the first liquid is also used as the cleaning liquid, it is possible to simplify the supply mechanism which supplies the cleaning liquid.
  • a third maintenance method is a maintenance method for an exposure apparatus which exposes a substrate with an exposure light via an optical member and a first liquid, the maintenance method comprising: arranging a movable member to be opposite to a nozzle member having a liquid contact portion, which comes into contact with the first liquid, and retaining the first liquid between the optical member and the substrate; and cleaning the liquid contact portion by using a second liquid supplied to the movable member via the nozzle member.
  • a fourth maintenance method is a maintenance method for an exposure apparatus which exposes a substrate with an exposure light via an optical member and a first liquid, the maintenance method comprising: arranging a movable member to be opposite to a nozzle member which retains the first liquid between the optical member and the substrate; and setting a cleaning condition for cleaning a liquid contact portion, which comes into contact with the first liquid, with a second liquid, depending on information about the liquid contact portion.
  • the liquid contact portion can be cleaned with ease. Consequently, it is possible to efficiently perform the maintenance for the exposure apparatus which performs the exposure by the liquid immersion method.
  • a first exposure method of the present invention comprises a step of using the maintenance method of the present invention.
  • a second exposure method of the present invention is an exposure method for exposing a substrate with an exposure light via an optical member and a first liquid, the exposure method comprising: arranging a movable member to be opposite to a nozzle member having a liquid contact portion, which comes into contact with the first liquid, and retaining the first liquid between the optical member and the substrate; and cleaning the liquid contact portion by using a second liquid supplied to the movable member via the nozzle member.
  • a third exposure method of the present invention is an exposure method for exposing a substrate with an exposure light via an optical member and a first liquid, the exposure method comprising: arranging a movable member to be opposite to a nozzle member which retains the first liquid between the optical member and the substrate; and setting a cleaning condition for cleaning a liquid contact portion, which comes into contact with the first liquid, with a second liquid, depending on information about the liquid contact portion.
  • the second and third exposure methods it is easy to clean the liquid contact portion. Consequently, it is possible to efficiently perform the maintenance for the exposure apparatus which performs the exposure by the liquid immersion method.
  • a first exposure apparatus is an exposure apparatus which forms a liquid immersion space by filling a first liquid between an optical member and a substrate and which exposes the substrate with an exposure light via the optical member and the first liquid
  • the exposure apparatus comprising: a liquid immersion space-forming member which forms the liquid immersion space with the first liquid; a movable member which is movable relative to the optical member; a liquid-jetting mechanism at least a part of which is provided on the movable member and which jets a second liquid; and a controller which allows the liquid-jetting mechanism to jet the second liquid therefrom toward an area including at least a part of a liquid contact portion, which comes into contact with the first liquid, to clean the liquid contact portion when the liquid immersion space is formed with the first liquid on the movable member via the liquid immersion space-forming member.
  • a second exposure apparatus is an exposure apparatus which forms a liquid immersion space by filling a first liquid between an optical member and a substrate and which exposes the substrate with an exposure light via the optical member and the first liquid
  • the exposure apparatus comprising: a liquid immersion space-forming member which forms the liquid immersion space with the first liquid; a movable member which is movable relative to the optical member; an accumulating mechanism which accumulates the first liquid supplied onto the movable member via the liquid immersion space-forming member; and a liquid-jetting device at least a part of which is provided on the movable member and which jets the first liquid accumulated by the accumulating mechanism toward an area including at least a part of a liquid contact portion, which comes into contact with the first liquid, to clean the liquid contact portion.
  • a third exposure apparatus is an exposure apparatus which exposes a substrate with an exposure light via an optical member and a first liquid
  • the exposure apparatus comprising: a nozzle member having a liquid contact portion, which comes into contact with the first liquid, and retaining the first liquid between the optical member and the substrate; a movable member which is movable relative to the optical member; and a cleaning member at least a part of which is provided on the movable member and which cleans the liquid contact portion with a second liquid supplied to the movable member via the nozzle member.
  • a fourth exposure apparatus is an exposure apparatus which exposes a substrate with an exposure light via an optical member and a first liquid
  • the exposure apparatus comprising: a nozzle member which retains the first liquid between the optical member and the substrate; a cleaning member which cleans a liquid contact portion, coming into contact with the first liquid, with a second liquid; a movable member which is arranged to be opposite to the nozzle member at least during the cleaning; and a controller which controls the cleaning member to make a cleaning condition with the second liquid be variable and which sets the cleaning condition depending on information about the liquid contact portion.
  • the first, second, third, or fourth maintenance method of the present invention can be used by the first, second, third, or fourth exposure apparatus of the present invention.
  • a method for producing a device according to the present invention comprises exposing a substrate by using the exposure method or the exposure apparatus of the present invention; and developing the exposed substrate.
  • the present invention it is possible to clean the liquid contact portion with ease. Consequently, it is possible to efficiently perform the maintenance for the exposure apparatus which performs the exposure by the liquid immersion method.
  • FIG. 1 shows a schematic construction, with partial cutout, of an example of an exposure apparatus according to an embodiment of the present invention.
  • FIG. 2 is a perspective view of a nozzle member 30 shown in FIG. 1 .
  • FIG. 3 is a sectional view taken along a line AA shown in FIG. 2 .
  • FIG. 4 shows, with partial cutout, a cleaning mechanism provided on a side of a measuring stage MST shown in FIG. 1 .
  • FIG. 5 is a plan view of a substrate stage PST and the measuring stage MST shown in FIG. 1 .
  • FIG. 6 is a plan view of a process in which the measuring stage MST is moved to a bottom surface of a projection optical system PL as starting from the state shown in FIG. 5 .
  • FIG. 7 shows, in cross section, a measuring table MTB and a nozzle member 30 to illustrate an example of a cleaning operation of the embodiment of the present invention.
  • FIG. 8A shows, with partial cutout, an example of a cleaning mechanism of another embodiment of the present invention
  • FIG. 8B shows, with partial cutout, a situation in which the liquid is jetted from the cleaning mechanism.
  • FIG. 9A is a flow chart illustrating an example of a maintenance operation
  • FIG. 9B is a flow chart illustrating an example of steps of producing a microdevice.
  • FIG. 1 shows a schematic construction of an exposure apparatus EX according to a first embodiment.
  • the exposure apparatus EX includes a mask stage RST which supports a mask M formed with a transferring pattern; a substrate stage PST which supports a substrate P as an exposure objective; an illumination optical system IL which illuminates, with an exposure light EL, the mask M supported by the mask stage RST; a projection optical system PL which projects an image of the pattern (pattern image) of the mask M, illuminated with the exposure light EL, onto a projection area AR 1 on the substrate P supported by the substrate stage PST; a measuring stage MST which is formed with a reference mark for the alignment, etc.; a controller CONT which integrally controls the operation of the entire exposure apparatus EX; and a liquid immersion system (liquid immersion mechanism) which is provided for the application of the liquid immersion method.
  • the liquid immersion system of this embodiment includes a liquid supply mechanism 10 which supplies the liquid 1 onto the substrate P and onto the measuring stage MST, and a liquid recovery mechanism 20 which recover
  • the exposure apparatus EX forms the liquid immersion area AR 2 (locally) in a partial area on the substrate P including the projection area AR 1 of the projection optical system PL or in a part of the area (partial area) on the substrate P and a surrounding area therearound, with the liquid 1 supplied from the liquid supply mechanism 10 at least during a period in which the pattern image of the mask M is transferred onto the substrate P.
  • the exposure apparatus EX adopts the local liquid immersion system wherein a space which is between the optical element (for example, a lens having a substantially flat bottom surface (light-exit surface) or a plane-parallel) 2 arranged at the terminal end (end portion) on a side of the image plane (image plane side) of the projection optical system PL and a surface of the substrate P arranged on the image plane side, is filled with the liquid 1 ; and in which the substrate P is exposed with the exposure light EL allowed to pass through the mask M, via the projection optical system PL and the liquid 1 disposed between the projection optical system PL and the substrate P, so that the pattern of the mask M is transferred to and exposed on the substrate P.
  • the optical element for example, a lens having a substantially flat bottom surface (light-exit surface) or a plane-parallel) 2 arranged at the terminal end (end portion) on a side of the image plane (image plane side) of the projection optical system PL and a surface of the substrate P arranged on the image plane side,
  • the liquid immersion exposure is performed by using a liquid immersion space-forming member (including, for example, a nozzle member 30 ) which forms the liquid immersion space including the optical path space for the exposure light EL irradiated from the projection optical system PL.
  • a liquid immersion space-forming member including, for example, a nozzle member 30 .
  • the Z axis extends in parallel to an optical axis AX of the projection optical system PL
  • the X axis extends in a synchronous movement direction (scanning direction) of the mask M and the substrate P in a plane perpendicular to the Z axis
  • the Y axis extends in a direction perpendicular to the scanning direction (non-scanning direction).
  • Directions of rotation (inclination) about the X axis, the Y axis, and the Z axis are designated as the ⁇ X, ⁇ Y, and ⁇ Z directions respectively.
  • the term “substrate” includes not only a base material itself including a semiconductor wafer such as a silicon wafer, etc. but also those obtained by coating the base material with a resist (photoresist) as a photosensitive material, and also includes those obtained by coating the base material with various films including a protective film (top coat film, etc.) separately from the photosensitive film.
  • the mask includes a reticle on which a device pattern to be subjected to the reduction projection onto the substrate is formed.
  • the mask is obtained such that a predetermined pattern is formed by using a light-shielding film such as chromium on a glass plate (transparent substrate) including, for example, synthetic silica glass, etc.
  • the transmission type mask is not limited to a binary mask in which the pattern is formed with a light-shielding film, and also includes, for example, a phase shift mask of the spatial frequency modulation type, a half tone type, etc.
  • those usable as the substrate P may be obtained, for example, such that a disc-shaped semiconductor wafer, which has a diameter of about 200 mm to 300 mm, is coated with the photoresist by an unillustrated coater/developer to provide a predetermined thickness (for example, about 200 nm), and the surface thereof is coated with an antireflection film or a top coat film, if necessary.
  • the illumination optical system IL illuminates, with the exposure light EL, the mask M supported by the mask stage RST.
  • the illumination optical system IL includes an optical integrator which uniformizes the illuminance of the light flux radiated from an unillustrated exposure light source; a condenser lens which collects the exposure light EL from the optical integrator; a relay lens system; a variable field diaphragm which defines the illumination area on the mask M brought about by the exposure light EL to have a slit-shaped form; etc.
  • a predetermined illumination area on the mask M is illuminated with the exposure light EL having the uniform illuminance distribution by the illumination optical system IL.
  • Those used as the exposure light EL irradiated from the illumination optical system IL include emission lines (for example, i-ray) in the ultraviolet region radiated, for example, from a mercury lamp, far ultraviolet light beams (DUV light beams) such as the KrF excimer laser beam (wavelength: 248 nm), and vacuum ultraviolet light beams (VUV light beams) such as the ArF excimer laser beam (wavelength: 193 nm), the F 2 laser beam (wavelength: 157 nm), etc.
  • the ArF excimer laser beam is used as the exposure light EL.
  • the mask stage RST supports the mask M.
  • the mask stage RST is two-dimensionally movable in the plane perpendicular to the optical axis AX of the projection optical system PL on an unillustrated mask base, i.e., in the XY plane, and is finely rotatable in the ⁇ Z direction.
  • the mask stage RST is driven, for example, by a mask stage-driving device RSTD such as a linear motor.
  • the mask stage-driving device RSTD is controlled by the controller CONT.
  • a movement mirror (reflecting surface) 55 A is provided on the mask stage RST.
  • a laser interferometer 56 A is provided at a position opposite to or facing the movement mirror 55 A.
  • the laser interferometer 56 A constitutes a laser interferometer system having three or more length-measuring axes.
  • the position in the two-dimensional direction and the angle of rotation of the mask stage RST (mask M) are measured in real-time by the laser interferometer 56 A.
  • An obtained result of the measurement is outputted to the controller CONT.
  • the controller CONT drives the mask stage-driving device RSTD based on the result of the measurement to thereby move or position the mask M supported by the mask stage RST.
  • the movement mirror 55 A is not limited to only the plane mirror, and may include a corner cube (retroreflector). Alternatively, for example, it is also allowable to use a reflecting surface formed by mirror-finishing an end surface (side surface) of the mask stage RST, instead of the movement mirror 55 A.
  • the projection optical system PL projects the pattern of the mask M onto the substrate P to perform the exposure at a predetermined projection magnification ⁇ ( ⁇ represents the reduction magnification, and is, for example, 1 ⁇ 4, 1 ⁇ 5 or the like).
  • the projection optical system PL is constructed by a plurality of optical elements including the optical element 2 which is provided at the terminal end on the side of the substrate P (image plane side of the projection optical system PL).
  • the optical elements are supported by a barrel PK.
  • the projection optical system PL is not limited to the reduction system, and may be any one of the 1 ⁇ magnification system and the magnifying system.
  • the optical element 2 which is disposed at the end portion of the projection optical system PL, is provided detachably (exchangeably) with respect to the barrel PK.
  • the liquid 1 of the liquid immersion area AR 2 comes into contact with the optical element 2 .
  • the projection optical system PL is provided on a barrel surface plate supported by three support columns via an anti-vibration mechanism.
  • the projection optical system PL may be supported in a hanging manner on an unillustrated main frame member which is arranged over or above the projection optical system PL or on the mask base described above, etc.
  • pure or purified water is used as the liquid 1 .
  • the ArF excimer laser beam but also the far ultraviolet light beam (DUV light beam) such as the KrF excimer laser beam and the emission line radiated, for example, for example, a mercury lamp is also transmissive through pure water.
  • the optical element 2 is formed of calcium fluoride (CaF 2 ). Calcium fluoride has a high affinity for water. Therefore, it is possible to allow the liquid 1 to make tight contact with the substantially entire surface of a liquid contact surface 2 a of the optical element 2 .
  • the optical element 2 may be silica glass which has a high affinity for water.
  • the resist of the substrate P is, as an example, a liquid-repellent resist which repels the liquid 1 .
  • the resist may be coated with the top coat for the protection, if necessary.
  • the property to repel the liquid 1 is called “liquid repellence”.
  • the liquid repellence means the water repellence.
  • the substrate stage PST is provided with a substrate holder PH which holds the substrate P, for example, by the vacuum attraction, a Z stage portion which controls the position in the Z direction (focus position) and the angles of inclination in the ⁇ X and ⁇ Y directions of the substrate holder PH (substrate P), and an XY stage portion which is movable while supporting the Z stage portion.
  • the XY stage portion is placed over a guide surface (surface substantially parallel to the image plane of the projection optical system PL) which is parallel to the XY plane on a base 54 , for example, with an air bearing (gas bearing) intervening therebetween so that the XY stage portion is movable in the X direction and the Y direction.
  • the substrate stage PST (Z stage portion and XY stage portion) is driven by a substrate stage-driving device PSTD such as a linear motor.
  • the substrate stage-driving device PSTD is controlled by the controller CONT.
  • the Z stage portion includes a table and an actuator (for example, a voice coil motor, etc.) which drives the table at least in the Z, ⁇ X, and ⁇ Y directions.
  • the substrate holder and the table are formed integrally, and these components are collectively referred to as “substrate holder PH”.
  • the substrate stage PST may be a coarse/fine movement stage in which the table is finely movable in the directions of six degrees of freedom with respect to the XY stage portion.
  • a movement mirror 55 B is provided on the substrate holder PH on the substrate stage PST.
  • a laser interferometer 56 B is provided at a position opposite to or facing the movement mirror 55 B.
  • the movement mirror 55 B is constructed of an X axis movement mirror 55 BX and a Y axis movement mirror 55 BY.
  • the laser interferometer 56 B is also constructed of an X axis laser interferometer 56 BX and a Y axis laser interferometer 56 BY.
  • the position in the two-dimensional direction and the angle of rotation of the substrate holder PH (substrate P) on the substrate stage PST are measured in real-time by the laser interferometer 56 B; and an obtained result of the measurement is outputted to the controller CONT.
  • the controller CONT drives the substrate stage-driving device PSTD based on the result of the measurement to thereby move or position the substrate P supported by the substrate stage PST.
  • the laser interferometer 56 B may be capable of measuring also the information about the position in the Z axis direction and the rotation in the ⁇ X and ⁇ Y directions of the substrate stage PST, and details thereof are disclosed, for example, in Published Japanese Translation of PCT International Publication for Patent Application No. 2001-510577 (corresponding to International Publication No. 1999/28790).
  • a reflecting surface, which is formed, for example, by mirror-finishing a side surface, etc. of the substrate stage PST or the substrate holder PH, may be used instead of the movement mirror 55 B.
  • a plate portion 97 which is annular and flat and which is liquid-repellent, is provided on the substrate holder PH so that the substrate P is surrounded with the plate portion 97 .
  • the liquid-repelling process includes, for example, a coating process using a material having the liquid repellence.
  • the material having the liquid repellence includes, for example, fluorine-based resin materials such as polytetrafluoroethylene (Teflon (trade name)), acrylic resin materials, silicon-based resin materials, and synthetic resin materials such as polyethylene.
  • Teflon polytetrafluoroethylene
  • the thin film for the surface process may be a single layer film or a film formed of a plurality of layers.
  • the upper surface of the plate portion 97 is a flat surface which has a height approximately same as that of the surface of the substrate P held by the substrate holder PH. In this case, a gap of about 0.1 to 1 mm is provided between the edge of the substrate P and the plate portion 97 .
  • the resist of the substrate P is liquid-repellent, and the liquid 1 has the surface tension. Therefore, the liquid 1 is hardly allowed to inflow into the gap. Even in a case that a portion, which is disposed in the vicinity of the circumferential edge of the substrate P, is exposed, it is possible to retain or hold the liquid 1 between the plate portion 97 and the projection optical system PL.
  • the substrate holder PH is provided with a sucking device (not shown) in order that the liquid 1 , which is allowed to inflow into the gap between the plate portion 97 and the substrate P, is discharged or removed to the outside. Therefore, it is not necessarily indispensable that the resist (or the top coat) of the substrate P is liquid-repellent.
  • the plate portion 97 is provided detachably (exchangeably) for the substrate holder PH.
  • the upper surface of the substrate holder PH, which surrounds the substrate P may be subjected to the liquid-repelling process to form the flat surface, without providing the plate portion 97 .
  • the substrate holder PH is detachable (exchangeable) and that the maintenance (for example, the repair of the liquid-repellent film) is performed for the flat surface.
  • the liquid supply mechanism 10 shown in FIG. 1 is provided to supply the predetermined liquid 1 onto the substrate P.
  • the liquid supply mechanism 10 includes a liquid supply section 11 which is capable of feeding the liquid 1 , and a supply tube 12 which has one end connected to the liquid supply section 11 .
  • the liquid supply section 11 is provided with a tank which accommodates the liquid 1 , a filter section, a pressurizing pump, etc. It is not necessarily indispensable that the liquid supply mechanism 10 is provided with all of the tank, the filter section, the pressurizing pump, etc.; and at least a part or parts thereof may be substituted, for example, with an equipment of the factory or the like in which the exposure apparatus EX is installed.
  • the liquid recovery mechanism 20 is provided to recover the liquid 1 supplied onto the substrate P.
  • the liquid recovery mechanism 20 includes a liquid recovery section 21 which is capable of recovering the liquid 1 , a recovery tube 22 which has one end connected to the liquid recovery section 21 , a supply tube 27 which is connected to the recovery tube 22 , and a cleaning liquid supply section 26 which is connected to the end of the supply tube 27 to supply a predetermined cleaning liquid.
  • Valves 23 , 28 are provided at intermediate positions of the recovery tube 22 and the supply tube 27 respectively.
  • the liquid recovery section 21 is provided with, for example, a vacuum system (sucking device) such as a vacuum pump, and a tank which accommodates the recovered liquid 1 .
  • the cleaning liquid supply section 26 is provided with a tank which accommodates the cleaning liquid, a pressurizing pump, etc. By closing the valve 23 disposed on the side of the recovery tube 22 and by opening the valve 28 disposed on the side of the supply tube 27 , it is possible to supply the cleaning liquid from the cleaning liquid supply section 26 via the supply tube 27 to the recovery tube 22 . It is not necessarily indispensable that the liquid recovery mechanism 20 is provided with all of the vacuum system, the tank, etc.; and at least a part or parts thereof may be substituted, for example, with an equipment of the factory or the like in which the exposure apparatus EX is installed.
  • Those usable as the cleaning liquid include a mixture liquid of thinner and water as the liquid distinct from the liquid 1 , ⁇ -butyrolactone, a solvent such as isopropyl alcohol (IPA), etc.
  • IPA isopropyl alcohol
  • the liquid supply section 11 can be also used as the cleaning liquid supply section. Therefore, it is not necessarily indispensable to provide the cleaning liquid supply section 26 and the supply tube 27 .
  • the supply tube 27 extending from the cleaning liquid supply section 26 can be also connected to the supply tube 12 which is communicated with the liquid supply section 11 .
  • the cleaning liquid may be supplied to the liquid immersion area (liquid immersion space) independently from the supply flow passage of the liquid 1 (for example, the supply tube 12 ).
  • the nozzle member 30 is arranged as a flow passage-forming member in the vicinity of the optical element 2 disposed at the terminal end of the projection optical system PL.
  • the nozzle member 30 is an annular member which is provided to surround the circumference of the optical element 2 at a position over or above the substrate P (substrate stage PST).
  • the nozzle member 30 is supported by a column mechanism (not shown) via an unillustrated support member.
  • the nozzle member 30 is provided with a first supply port 13 and a second supply port 14 (see FIG. 3 ) which are arranged to be opposite to or to face the surface of the substrate P in a state that the projection area AR 1 of the projection optical system PL is located on the substrate P.
  • the nozzle member 30 has supply flow passages 82 A, 82 B (see FIG. 3 ) disposed at the inside thereof.
  • One end of the supply flow passage 82 A is connected to the first supply port 13
  • the second supply port 14 is connected via the supply flow passage 82 B to an intermediate portion of the supply flow passage 82 A (see FIG. 3 ).
  • the other end of the supply flow passage 82 A is connected to the liquid supply section 11 via the supply tube 12 .
  • the nozzle member 30 is provided with a recovery port 24 (see FIG. 3 ) which has a rectangular frame-shaped form and which is arranged to be opposite to or face the surface of the substrate P.
  • FIG. 2 is a perspective view schematically illustrating the nozzle member 30 .
  • the nozzle member 30 is the annular member which is provided to surround the circumference of the optical element 2 disposed at the terminal end of the projection optical system PL.
  • the nozzle member 30 is provided with a first member 31 , and a second member 32 which is arranged on the upper portion of the first member 31 .
  • the first and second members 31 , 32 are plate-shaped members respectively, and have through-holes 31 A, 32 A, respectively, which are disposed at central portions thereof and in which the projection optical system PL (optical element 2 ) can be arranged.
  • FIG. 3 shows a sectional view taken along a line AA illustrating the first member 31 disposed at the lower stage of the nozzle member 30 shown in FIG. 2 .
  • the supply flow passages 82 A, 82 B formed in the second member 32 disposed on the first member 31 and the supply tube 12 connected to the supply flow passage 82 A are depicted by two-dot chain lines.
  • the first member 31 of the nozzle member 30 is provided with the first supply port 13 which is formed on the side in the +X direction of the optical element 2 of the projection optical system PL and which supplies the liquid 1 onto the substrate P, and the second supply port 14 which is formed on the side in the ⁇ X direction of the optical element 2 and which supplies the liquid 1 onto the substrate P.
  • the supply ports 13 , 14 are arranged to interpose the projection area AR 1 in the X direction (scanning direction of the substrate P).
  • Each of the supply ports 13 , 14 is a through-hole which penetrates through the first member 31 and which has a rectangular shape that is long in the Y direction. However, it is also allowable to adopt a circular arc-shaped form which is spread outwardly from the center of the projection area AR 1 , etc.
  • the first member 31 has a frame-shaped recovery port 24 which is formed in the first member 31 , which, is rectangular (or may be circular, etc.) and which is arranged to surround the optical element 2 of the projection optical system PL (projection area AR 1 ); and a recovery flow passage 84 which is formed in the first member 31 and which makes communication between the recovery port 24 and the recovery tube 22 .
  • the recovery port 24 is a groove-shaped recess formed on the bottom surface of the first member 31 , and the recovery port 24 is provided on the outer side of the supply ports 13 , 14 with respect to the optical element 2 .
  • a gap between the substrate P and the supply ports 13 , 14 and a gap between the substrate P and the recovery port 24 are provided substantially identically.
  • the gap between the substrate P and the recovery port 24 may be made narrower than the gap between the substrate P and the supply ports 13 , 14 .
  • the nozzle member 30 is provided with a porous member 25 .
  • the porous member 25 is provided, for example, at the flow passage or the passage port for the liquid 1 of the first member 32 (including at least one of the supply ports 12 , 14 and the recovery port 24 ).
  • a mesh filter which has a large number of small holes formed in a mesh form, is fitted as the porous member 25 to cover the recovery port 24 .
  • the porous member 25 is also referred to as “mesh filter”.
  • the porous member 25 is not limited to the mesh filter.
  • the porous member 25 may be formed of, for example, a material having pores including sintered metal, ceramics, etc.
  • the liquid immersion area AR 2 which is filled with the liquid 1 , is formed inside an area which is substantially rectangular (or may be circular, etc.) and which is surrounded by the recovery port 24 to include the projection area AR 1 . Further, the liquid immersion area AR 2 is formed locally on a part of the surface of the substrate P (or in a form to include a part of the surface of the substrate P) during the scanning exposure.
  • the nozzle member (flow passage-forming member) 30 fills the space between the optical element 2 and the substrate P with the liquid 1 to form the local liquid immersion space (corresponding to the liquid immersion area AR 2 ) including the optical path space for the exposure light EL. Therefore, the nozzle member (flow passage-forming member) 30 is referred to as “liquid immersion space-forming member”, “containment member” (or “confinement member”), etc. as well.
  • Each of the first member 31 and the second member 32 of the nozzle member 30 shown in FIG. 2 and the mesh filter 25 shown in FIG. 3 is formed of a liquid-attractive material which has relatively high affinity for the liquid 1 , for example, stainless steel (SUS) or titanium. Therefore, with reference to FIG. 1 , the liquid 1 in the liquid immersion area AR 2 is allowed to pass through the mesh filter 25 of the recovery port 24 provided on the nozzle member 30 , and then the liquid 1 is smoothly recovered by the liquid recovery section 21 via the recovery flow passage 84 and the recovery tube 22 . In this process, a foreign matter, which is included in the foreign matter such as the resist residue or the like and which is larger than the meshes of the mesh filter 25 , remains on the surface of the mesh filter 25 .
  • SUS stainless steel
  • the liquid recovery port 24 of this embodiment has the rectangular or circular frame-shaped form.
  • the recovery port is constructed by using two recovery ports 29 A, 29 B which are rectangular (or may be circular arc-shaped, etc.) and which are arranged to interpose the supply ports 13 , 14 in the X direction and two recovery ports 29 C, 29 D which are rectangular (or may be circular arc-shaped, etc.) and which are arranged to interpose the optical element 2 in the Y direction; so that the mesh filter is arranged on each of the recovery ports 29 A to 29 D.
  • the number of the recovery ports 29 A to 29 D is arbitrary.
  • the recovery ports 29 A to 29 D and the recovery port 24 may be used in a duplicate manner to recover the liquid 1 in the liquid immersion area AR 2 .
  • the mesh filters may be also arranged on the recovery ports 13 , 14 in order to prevent any foreign matter in the liquid immersion area AR 2 from entering into and contaminating the inside of the nozzle member 30 .
  • the nozzle member 30 used in the embodiment described above is not limited to the structure described above.
  • the liquid supply ports 13 , 14 and the recovery port 24 are provided on the same nozzle member 30 .
  • the supply ports 13 , 14 and the recovery port 24 may be provided on distinct members.
  • only the supply port may be provided on another member different from the nozzle member 30 .
  • only the recovery port may be provided on the another member.
  • the second recovery port may be provided on the another member.
  • the supply ports 13 , 14 may be communicated with different and distinct liquid supply sections, and the liquid 1 may be supplied from the supply ports 13 , 14 to the liquid immersion area AR 2 in a state that the supply amounts can be controlled independently from each other.
  • the nozzle member 30 of this embodiment has the lower surface which is set to be arranged nearer to the image plane side (substrate side) than the lower end surface of the projection optical system PL.
  • the lower surface of the nozzle member 30 may be defined at a height (Z position) approximately same as that of the lower end surface (light-exit surface) of the projection optical system PL.
  • a part (lower end portion) of the nozzle member 30 may be provided to extend crawlingly until arrival at a position under the projection optical system PL (optical element 2 ) so that the exposure light EL is not shielded or blocked.
  • the nozzle member 30 forms a part of the liquid supply mechanism 10 and a part of the liquid recovery mechanism 20 respectively. That is, the nozzle member 30 is a part of the liquid immersion system.
  • the valves 23 , 28 which are provided for the recovery tube 22 and the supply tube 27 , open/close the flow passages of the recovery tube 22 and the supply tube 27 respectively, and the operations of the valves 23 , 28 are controlled by the controller CONT.
  • the liquid recovery section 21 is capable of sucking and recovering the liquid 1 from the liquid immersion area AR 2 via the recovery port 24 during a period in which the flow passage of the recovery tube 22 is open.
  • a part or parts of the liquid immersion system for example, at least the nozzle member 30 , is/are provided on the above-described column mechanism (not shown) on which the body of the exposure apparatus EX (apparatus body) is provided, i.e., on the main frame holding the projection optical system PL (including the barrel surface plate described above, etc.).
  • the part or parts of the liquid immersion system for example, at least the nozzle member 30 may be provided, for example, on a frame member different from the column mechanism (main frame).
  • the nozzle member 30 may be supported in a hanging manner integrally with the projection optical system PL.
  • the nozzle member 30 may be provided on a measuring frame supported in a hanging manner independently from the projection optical system PL. In the case of the latter, it is also allowable that the projection optical system PL is not supported in the hanging manner.
  • the liquid supply operations of the liquid supply section 11 and the cleaning liquid supply section 26 are controlled by the controller CONT.
  • the controller CONT is capable of independently controlling the liquid supply amounts per unit time to be supplied onto the substrate P by the liquid supply section 11 and the cleaning liquid supply section 26 respectively.
  • the liquid 1 which is fed from the liquid supply section 11 , is supplied onto the substrate P from the supply ports 13 , 14 (see FIG. 3 ) provided on the lower surface of the nozzle member 30 to be opposite to the substrate P, via the supply tube 12 and the supply flow passages 82 A, 82 B of the nozzle member 30 .
  • the liquid recovery operation of the liquid recovery section 21 is controlled by the controller CONT.
  • the controller CONT is capable of controlling the liquid recovery amount per unit time to be recovered by the liquid recovery section 21 .
  • the liquid 1 on the substrate P which is recovered via the mesh filter 25 from the recovery port 24 provided over or above the substrate P, is recovered by the liquid recovery section 21 via the recovery tube 22 and the recovery flow passage 84 of the nozzle member 30 .
  • the measuring stage MST includes an X stage portion 181 which has an oblong shape long in the Y direction and which is driven in the X direction (scanning direction); a leveling table 188 which is placed on the X stage portion 181 , for example, with an air bearing intervening therebetween; and a measuring table MTB which serves as a measuring unit arranged on the leveling table 188 .
  • the measuring table MTB is placed on the leveling table 188 with an air bearing intervening therebetween.
  • the measuring table MTB and the leveling table 188 can be integrated into one body as well.
  • the X stage portion 181 is placed movably in the X direction on the base 54 , for example, with an air bearing intervening therebetween.
  • FIG. 5 is a plan view of the substrate stage PST and the measuring stage MST shown in FIG. 1 .
  • X axis stators 186 , 187 each of which includes a plurality of permanent magnets arranged in a predetermined arrangement in the X direction on the inner surface, are installed in parallel to the X axis to interpose the base 54 in the Y direction (non-scanning direction) between the X axis stators 168 , 187 .
  • a Y axis slider 180 is arranged movably in the X direction substantially in parallel to the Y axis between the stators 186 , 187 via movers 182 , 183 which include coils respectively.
  • the substrate stage PST is arranged movably in the Y direction along the Y axis slider 180 .
  • a Y axis linear motor which drives the substrate stage PST in the Y direction, is constructed by movers in the substrate stage PST and stators (not shown) on the Y axis slider 180 .
  • a pair of X axis linear motors which drive the substrate stage PST in the X direction, are constructed by the movers 182 , 183 and the stators 186 , 187 corresponding thereto respectively.
  • the X axis and Y axis linear motors, etc. constitute the substrate stage-driving device PSTD shown in FIG. 1 .
  • an X stage portion 181 of the measuring stage MST is arranged movably in the X direction between stators 186 , 187 via movers 184 , 185 including coils respectively.
  • a pair of X axis linear motors, which drive the measuring stage MST in the X direction, are constructed by the movers 184 , 185 and the stators 186 , 187 corresponding thereto respectively.
  • the X axis linear motors, etc. are represented by the measuring stage-driving device TSTD in FIG. 1 .
  • a stator 167 which has a “]”-shaped cross-sectional form and in which a plurality of permanent magnets are arranged to generate the uniform magnetic field in the Z direction, to be opposite to or face the inner surface and a stator 171 which has a flat plate-shaped form and which includes a coil wound (arranged) substantially along the X axis are successively fixed to an end of the X stage 181 in the ⁇ X direction so that the stators 167 , 171 are disposed substantially in parallel to the Y axis and are stacked in the Z direction.
  • Movers 166 A, 166 B which include coils wound (arranged) along the Y axis, are fixed at two positions respectively, the two positions being separated in the Y direction on the measuring table MTB so that the movers 166 A, 166 B are arranged in the stator 167 disposed at the lower position.
  • a mover 170 which has a “]”-shaped cross-sectional form and in which a plurality of permanent magnets are arranged in a predetermined arrangement in the Y direction, is fixed to the measuring table MTB so that the stator 171 disposed at the upper position is interposed in the Z direction.
  • X axis voice coil motors 168 A, 168 B (see FIG.
  • a Y axis linear motor 169 which drives the measuring table MTB in the Y direction with respect to the X stage portion 181 , is constructed by the mover 170 and the stator 171 disposed at the upper position.
  • An X axis movement mirror (reflecting surface) 55 CX and a Y axis movement mirror (reflecting surface) 55 CY are fixed in the ⁇ X direction and the +Y direction on the measuring table MTB respectively.
  • An X axis laser interferometer 56 C is arranged to be opposite to or face the movement mirror 55 CX in the ⁇ X direction.
  • the movement mirrors 55 CX, 55 CY are represented by the movement mirror 55 C in FIG. 1 .
  • the laser interferometer 56 C is a multi-axis laser interferometer.
  • the position in the X direction and the angle of rotation in the ⁇ Z direction, etc. of the measuring table MTB are always measured by the laser interferometer 56 C.
  • a reflecting surface which is formed by mirror-finishing a side surface, etc. of the measuring stage MST, may be used instead of the movement mirrors 55 CX, 55 CY.
  • the laser interferometer 56 BY which is provided to measure the position in the Y direction, is commonly used for the substrate stage PST and the measuring stage MST. That is, the optical axes of the two X axis laser interferometers 56 BX, 56 C pass through the center of the projection area AR 1 of the projection optical system PL (coincident with the optical axis AX shown in FIG. 1 in this embodiment), and the optical axes are parallel to the X axis.
  • the optical axis of the Y axis laser interferometer 56 BY passes through the center of the projection area (optical axis AX), and the optical axis is parallel to the Y axis.
  • the laser beam of the laser interferometer 56 BY is irradiated onto the movement mirror 55 BY of the substrate stage PST, and the position of the substrate stage PST (substrate P) in the Y direction is measured by the laser interferometer 56 BY.
  • the laser beam of the laser interferometer 56 BY is irradiated onto the movement mirror 55 CY of the measuring table MTB, and the position of the measuring table MTB in the Y direction is measured by the laser interferometer 56 BY. Accordingly, the positions of the substrate stage PST and the measuring table MTB can be always measured highly accurately, with the center of the projection area of the projection optical system PL as a reference. Further, it is possible to decrease the number of laser interferometers which are highly accurate but expensive, thereby making it possible to reduce the production cost.
  • Linear encoders (not shown) of the optical system, etc. are arranged along the Y axis linear motor for the substrate stage PST and the Y axis linear motor 169 for the measuring table MTB.
  • the position in the Y direction of the substrate stage PST or the measuring table MTB is measured by each of the linear encoders during a period in which the laser beam of the laser interferometer 56 BY is not irradiated onto the movement mirror 55 BY or 55 CY.
  • the position in the two-dimensional direction and the angle of rotation of the measuring table MTB are measured by the laser interferometer 56 C and the laser interferometer 56 BY shown in FIG. 5 (or the linear encoder).
  • An obtained result of the measurement is outputted to the controller CONT.
  • the controller CONT drives the measuring stage-driving device TSTD, the linear motor 169 , and the voice coil motors 168 A, 168 B based on the measurement result to thereby move or position the measuring table MTB of the measuring stage MST.
  • the leveling table 188 is provided with three Z axis actuators each of which is capable of controlling the position in the Z direction, for example, in accordance with an air cylinder or voice coil motor system respectively.
  • the position in the Z direction and the angles in the ⁇ X direction and the ⁇ Y direction of the measuring table MTB are controlled by the leveling table 188 so that the upper surface of the measuring table MTB is focused with respect to the image plane of the projection optical system PL.
  • an autofocus sensor (not shown) is provided in the vicinity of the nozzle member 30 in order to measure the position of a detection objective surface such as the upper surface of the substrate P disposed in the projection area AR 1 and in the vicinity of the projection area AR 1 .
  • the controller CONT controls the operation of the leveling table 188 based on the measured value obtained by the autofocus sensor. Further, although not shown, an actuator is also provided in order that the position of the leveling table 188 in the X direction, the Y direction, and the ⁇ Z direction with respect to the X stage portion 181 is maintained at a predetermined position.
  • the autofocus sensor also detects the information about the inclination in the ⁇ X and ⁇ Y directions (angle of rotation) by measuring the position information in the Z direction about the detection objective surface at a plurality of measuring points thereof respectively. At least a part or parts of the plurality of measuring points may be defined in the liquid immersion area AR 2 (or in the projection area AR 1 ). Alternatively, all of the plurality of measuring points may be defined outside the liquid immersion area AR 2 .
  • the laser interferometers 56 B, 56 C are capable of measuring the position information in the Z axis, ⁇ X, and ⁇ Y directions about the detection objective surface
  • the autofocus sensor is not provided for the purpose of making it possible to measure the position information in the Z direction during the exposure operation of the substrate P.
  • the position of the detection objective surface is controlled in relation to the Z axis, ⁇ X, and ⁇ Y directions by using the measurement results of the laser interferometers 56 B, 55 C at least during the exposure operation.
  • the measuring table MTB of this embodiment is provided with measuring devices (measuring members) for performing various types of measurement in relation to the exposure. That is, the measuring table MTB is provided with a body 159 of the measuring table (measuring-table body 159 ) to which the movement mirror 55 C, the mover of the linear motor 169 , etc. are fixed; and a plate 101 which is fixed to the upper surface of the measuring-table body 159 and which is formed of a light-transmissive material having a low coefficient of expansion including, for example, silica glass, etc.
  • a chromium film is formed on the substantially entire surface of the plate 101 ; and the plate 101 has, at a several positions of the plate 101 , an area for the measuring device and a reference mark area FM having a plurality of reference marks formed therein, as disclosed in Japanese Patent Application Laid-open No. 5-21314 (corresponding to U.S. Pat. No. 5,243,195), etc.
  • a pair of reference marks FM 1 , FM 2 for an alignment sensor AS for the mask shown in FIG. 1 and a reference mark FM 3 for an alignment sensor ALG for the substrate arranged on a side surface of the projection optical system PL are formed in the reference mark area FM on the plate 101 .
  • the baseline amount as the spacing distance (positional relationship) between the projection position of the projection area AR 1 of the projection optical system PL and the detecting position of the alignment sensor ALG.
  • the liquid immersion area AR 2 is formed also on the plate 101 .
  • Each of the alignment sensors AS, ALG may be of the image processing system.
  • each of the alignment sensors AS, ALG may be, for example, of a system in which a diffracted light generated from the mark by being irradiated with a coherent beam is detected.
  • the measuring aperture patterns include, for example, an aperture pattern for measuring the spatial image (for example, a slit-shaped aperture pattern), a pinhole aperture pattern for measuring the uneven illuminance, an aperture pattern for measuring the illuminance, and an aperture pattern for measuring the wave aberration.
  • Measuring devices which correspond to the aperture patterns respectively and each of which is constructed of a measuring optical system and a photoelectric sensor, are arranged in the measuring-table body 159 disposed on the bottom surface side of the aperture patterns.
  • Examples of the measuring devices include an uneven illuminance sensor as disclosed, for example, in Japanese Patent Application Laid-open No. 57-117238 (corresponding to U.S. Pat. No. 4,465,368); a spatial image-measuring device for measuring the light intensity of the spatial image (projected image) of the pattern projected by the projection optical system PL as disclosed, for example, in Japanese Patent Application Laid-open No. 2002-14005 (corresponding to United States Patent Publication No. 2002/0041377); an illuminance monitor as disclosed, for example, in Japanese Patent Application Laid-open No. 11-16816 (corresponding to United States Patent Publication No. 2002/0061469); a wave aberration-measuring device as disclosed, for example, in International Publication No. 99/60361 (corresponding to European Patent No. 1,079,223); etc.
  • the exposure light EL is received via the projection optical system PL and the liquid 1 in the uneven illuminance sensor, the illuminance monitor, the spatial image-measuring device, the wave aberration-measuring device described above, etc. to be used for the measurement using the exposure light EL. Therefore, a liquid-repellent coat is applied to a surface of the plate 101 .
  • FIG. 4 shows a jetting mechanism for jetting the cleaning liquid, the jetting mechanism being installed to the measuring stage MST.
  • recesses 60 A, 60 B are formed at two positions on the upper surface of the measuring-table body 159 .
  • An aperture 101 a is formed through the plate 101 at a portion above the first recess 60 A.
  • Neither light-shielding film nor liquid-repellent coat is formed in an area 101 b of the plate 101 above the second recess 60 B Therefore, the illumination light can pass through the plate 101 at the area 101 b.
  • a jet nozzle portion 90 provided to jet the cleaning liquid, which is supplied from the bottom portion, from a jetting port 90 a in the upward direction at a high velocity is fixed to a central portion of the first recess 60 A.
  • a liquid inflow port, which is provided at the bottom portion of the jet nozzle portion 90 is connected to a cleaning liquid-jetting device 62 via a supply flow passage 86 which is disposed in the measuring-table body 159 and a flexible piping 63 A which is disposed at the outside of the measuring-table body 159 . That is, in this embodiment, the cleaning mechanism is provided with the jetting mechanism shown in FIG. 4 , wherein the liquid contact portion, which comes into contact with the liquid 1 , is cleaned by the jetting of the cleaning liquid.
  • the cleaning liquid is jetted at a high pressure to perform the high pressure cleaning as an aspect of jetting the cleaning liquid. It is also appropriate to clean all of the liquid contact portion which comes into contact with the liquid 1 at least during the liquid immersion exposure. However, in this embodiment, only a part of the liquid contact portion, for example, a part of the lower surface of the nozzle member 30 is cleaned. As another aspect of jetting the cleaning liquid, it is also allowable to spray the cleaning liquid in a form of mist. A plurality of pieces of the jet nozzle portion 90 may be provided, and the jet nozzle portions 90 may be arranged, for example, in one array or row.
  • the jetting direction, in which the cleaning liquid is jetted from the jetting port 90 a of the jet nozzle portion 90 for example, as an oblique direction other than a direction perpendicular to the upper surface of the plate 101 . That is, the jetting angle of the cleaning liquid with respect to the upper surface of the plate 101 is not limited to 90 degrees.
  • the jetting angle of the cleaning liquid may be varied, for example, by driving the jet nozzle portion 90 by an actuator.
  • the cleaning liquid may be jetted from the jetting port 90 a while being spread within a predetermined angle range.
  • the cleaning condition for cleaning the liquid contact portion by the jetting mechanism including, for example, the type (including, for example, the mixing ratio and the concentration of the dissolved gas described above), the pressure, the jetting pattern, and the temperature of the cleaning liquid to be jetted from the jet nozzle portion 90 , depending on the information about the liquid contact portion including, for example, the cleaning portion and/or the degree of dirt.
  • the number of the cleaning condition or conditions to be changed is not limited to one, and may be a plural.
  • the cleaning condition is not limited to at least one of the characteristic of the cleaning liquid and the jetting condition. It is not necessarily indispensable that the cleaning mechanism is provided with the jetting mechanism.
  • the jetting device 62 includes an accumulating section 62 a for the cleaning liquid, a temperature adjusting section 62 b which adjusts the temperature of the cleaning liquid supplied from the accumulating section 62 a at a predetermined temperature (for example, a high temperature), and a pressurizing section 62 c which feeds the temperature-adjusted cleaning liquid toward the piping 63 A at a high pressure.
  • the operations of the accumulating section 62 a , the temperature adjusting section 62 b , and the pressurizing section 62 c are controlled by a controller 61 including a computer. For example, in a case that the cleaning objective portion is dirtied to a great extent, the temperature of the cleaning liquid may be raised.
  • a mixing jetting device 66 which mixes and jets a gas and the cleaning liquid, is connected to an intermediate portion of the piping 63 A via a flexible piping 63 B.
  • the mixing jetting device 66 includes, for example, a gas-sucking section 66 a which inhales or sucks the air in the clean room via a duct 66 c and an internal dust-removing filter, and a mixing pressuring section 66 b .
  • the mixing pressurizing section 66 b mixes the gas supplied from the gas-sucking section 66 a and the temperature-adjusted cleaning liquid supplied via a piping 63 D from the temperature adjusting section 62 b of the jetting device 62 so that the mixed gas and cleaning liquid are fed at a predetermined pressure toward the piping 63 B.
  • the operations of the gas-sucking section 66 a and the mixing pressurizing section 66 b are controlled by the controller 61 .
  • Valves 64 A, 64 B are installed to the pipings 63 A, 63 B respectively.
  • the controller 61 closes the valve 64 B and opens the valve 64 A.
  • the controller 61 closes the valve 64 A and opens the valve 64 B. It is desirable that the valves 64 A, 64 B (as well as a valve 64 C described later on) are provided at positions as close as possible to the measuring table MTB in consideration of the fear of leakage of the internal liquid due to the frequent bending of the pipings 63 A, 63 B caused by the movement of the measuring stage MST.
  • the bottom surface of the recess 60 A is connected to a liquid recovery device 65 via a recovery flow passage 87 disposed in the measuring-table body 159 and a flexible piping 63 C disposed at the outside of the measuring-table body 159 .
  • An opening/closing valve 64 C is installed to the piping 63 C as well.
  • the recovery device 65 includes a sucking pump, a dust-removing filter section, and an accumulating section for the recovered liquid; and the operation thereof and the opening/closing operation of the valve 64 C are controlled by the controller 61 .
  • the cleaning liquid or the like (including the liquid forming the liquid immersion area AR 2 ), which enters the recess 60 A, is recovered by the recovery device 65 .
  • the cleaning liquid or the like, which enters the recess 60 A, can be also sucked and recovered via the nozzle member 30 by the liquid recovery section 21 shown in FIG. 1 .
  • the recovery mechanism for the cleaning liquid or the like which is disposed on the side of the measuring stage MST and which includes the recovery device 65 , the piping 63 C, and the recovery flow passage 87 .
  • An observing device 67 which includes an objective lens 67 a , a two-dimensional image pickup device 67 b such as CCD, and an unillustrated illumination system which illuminates a detection objective surface DP, is arranged in the second recess 60 B on the measuring-table body 159 shown in FIG. 4 .
  • the image pickup signal which is obtained by the image pickup device 67 b , is supplied via the controller 61 to an image processing system of the controller CONT shown in FIG. 1 .
  • the image processing system Based on the image pickup signal (image of the detection objective surface DP), the image processing system performs, for example, the confirmation of the degree of dirt and the confirmation of the position of the member as the cleaning objective to be cleaned by the jet nozzle portion 90 .
  • the positional relationship between the reference marks FM 1 to FM 3 and the recess 60 A is known in FIG. 5 . Further, by detecting the reference marks FM 1 to FM 3 with the alignment sensor ALG, it is possible to measure the positional relationship with respect to the nozzle member 30 shown in FIG. 1 . Therefore, the positional relationship between the jet nozzle portion 90 shown in FIG. 4 and the nozzle member 30 (cleaning objective) shown in FIG. 1 can be also determined highly accurately from the measurement result. Therefore, it is not necessarily indispensable to provide the observing device 67 . In a case that the observing device 67 is provided for the measuring stage MST, a part of the observing device 67 , for example, the illumination system described above may be arranged outside the measuring stage MST.
  • Those usable as the cleaning liquid to be jetted from the jetting device 62 shown in FIG. 4 include, for example, a mixture liquid of thinner and water, ⁇ -butyrolactone, a solvent such as IPA, and the liquid containing the liquid 1 described above, in the same manner as the cleaning liquid which is supplied from the cleaning liquid supply section 26 shown in FIG. 1 .
  • the cleaning liquid, which is jetted from the jetting device 62 is of the same type as that of the cleaning liquid which is supplied from the cleaning liquid supply section 26 .
  • the control of the operations of the jetting device 62 , the mixing jetting device 66 , and the recovery device 65 performed by the controller 61 , the opening/closing operations of the valves 64 A to 64 C, and the operation of the measuring stage MST corresponding to these operations are integrally controlled by the controller CONT shown in FIG. 1 .
  • the accumulating section 62 a for the cleaning liquid, of the jetting device 62 may be a detachable vessel or container of the cassette system.
  • the liquid, which is recovered by the recovery device 65 (or the liquid recovery section 21 shown in FIG. 1 ) may be returned to the vessel of the cassette system via a dust-removing filter; and the recovered liquid may be reused as the cleaning liquid.
  • the type of the cleaning liquid for the jetting device 62 may be different from the type of the cleaning liquid for the cleaning liquid supply section 26 .
  • a solvent such as IPA may be supplied by the cleaning liquid supply section 26 , and the jetting device 62 may jet the liquid 1 itself.
  • a part or parts of the cleaning mechanism may be substituted, for example, with an equipment of the factory or the like in which the exposure apparatus EX is installed.
  • the cleaning mechanism is not limited to the construction described above. For example, it is also allowable that the accumulating section 62 a is not provided.
  • a plurality of shot areas are defined on the substrate P.
  • the controller CONT of this embodiment moves the substrate stage PST while monitoring the output of the laser interferometer 56 B so that the substrate P is advanced along a predetermined route with respect to the optical axis AX (projection area AR 1 ) of the projection optical system PL, and successively exposes the plurality of shot areas in the step-and-scan manner. That is, a part of the pattern image of the mask M is projected onto the rectangular projection area AR 1 by the projection optical system PL during the scanning exposure effected by the exposure apparatus EX.
  • the mask M is moved at a velocity V in the X direction with respect to the illumination area, in synchronization with which the substrate P is moved at a velocity ⁇ V ( ⁇ represents the projection magnification) in the X direction with respect to the projection area AR 1 via the substrate stage PST.
  • V the velocity in the X direction with respect to the illumination area
  • ⁇ V the velocity in the X direction with respect to the projection area AR 1 via the substrate stage PST.
  • the controller CONT shown in FIG. 1 drives the liquid supply mechanism 10 during the exposure process for the substrate P to perform the liquid supply operation for supplying the liquid onto the substrate P.
  • the liquid 1 fed from the liquid supply section 11 of the liquid supply mechanism 10 , flows through the supply tube 12 , and then the liquid 1 is supplied onto the substrate P via the supply flow passages 82 A, 82 B formed in the nozzle member 30 .
  • the liquid 1 supplied onto the substrate P flows under or below the projection optical system PL in conformity with the movement of the substrate P.
  • the liquid 1 flows under or below the projection optical system PL at a velocity approximately same as that of the substrate P in the +X direction which is the same as the direction of the substrate P.
  • the exposure light EL radiated from the illumination optical system IL and passing through the mask M, is irradiated onto the image plane side of the projection optical system PL, thereby exposing the substrate P with the pattern of the mask M via the projection optical system PL and the liquid 1 of the liquid immersion area AR 2 .
  • the controller CONT performs the supply of the liquid 1 onto the substrate P by the liquid supply mechanism 10 when the exposure light EL is irradiated onto the image plane side of the projection optical system PL, i.e., during the exposure operation for the substrate P.
  • the liquid immersion area AR 2 is formed satisfactorily by continuing the supply of the liquid 1 by the liquid supply mechanism 10 during the exposure operation.
  • the controller CONT performs the recovery of the liquid 1 on the substrate P by the liquid recovery mechanism 20 when the exposure light EL is irradiated onto the image plane side of the projection optical system PL, i.e., during the exposure operation for the substrate P. It is possible to suppress the expansion of the liquid immersion area AR 2 by continuously executing the recovery of the liquid 1 by the liquid recovery mechanism 20 during the exposure operation (when the exposure light EL is irradiated onto the image plane side of the projection optical system PL).
  • the liquid supply mechanism 10 supplies the liquid 1 onto the substrate P simultaneously from the both sides of the projection area AR 1 through the supply ports 13 , 14 during the exposure operation. Accordingly, the liquid 1 , supplied from the supply ports 13 , 14 onto the substrate P, is satisfactorily spread in the space between the substrate P and the lower end surface of the optical element 2 disposed at the terminal end of the projection optical system PL and the space between the substrate P and the lower surface of the nozzle member 30 (first member 31 ).
  • the liquid immersion area AR 2 is formed in a range which is wider than at least the projection area AR 1 .
  • the liquid supply amount per unit time, which is to be supplied from a position approaching the projection area AR 1 in relation to the scanning direction may be set to be greater than the liquid supply amount which is to be supplied from a position on the side opposite to the position approaching the projection area AR 1 .
  • the recovery operation for recovering the liquid 1 by the liquid recovery mechanism 20 is not performed during the exposure operation, and that the flow passage of the recovery tube 22 is opened after the completion of the exposure to recover the liquid 1 on the substrate P.
  • the liquid 1 on the substrate P may be recovered by the liquid recovery mechanism 20 only during a partial period (at least a part of the stepping movement period) until the start of the exposure for another shot area to be exposed next to the certain shot area.
  • the controller CONT continues the supply of the liquid 1 by the liquid supply mechanism 10 during the exposure of the substrate P.
  • the controller CONT continues the supply of the liquid 1 as described above, it is possible not only to fill the space between the projection optical system PL and the substrate P with the liquid 1 satisfactorily, but also to avoid the generation of the vibration of the liquid 1 (so-called the water hammer phenomenon). In this way, all of the shot areas on the substrate P can be exposed by the liquid immersion method.
  • the controller CONT moves the measuring stage MST to the position opposite to or facing the optical element 2 of the projection optical system PL, for example, during the exchange of the substrate P, and forms the liquid immersion area AR 2 on the measuring stage MST.
  • the liquid immersion area AR 2 is moved between the substrate stage PST and the measuring stage MST.
  • the controller CONT executes the measurement in relation to the exposure (for example, the baseline measurement) by using at least one of the measuring devices (measuring members) provided on the measuring stage MST in a state that the liquid immersion area AR 2 is formed on the measuring stage MST.
  • the chemical amplification type resist includes a base resin, a photo acid generator (PAG) contained in the base resin, and an amine-based substance called “quencher”.
  • PAG photo acid generator
  • quencher an amine-based substance called “quencher”.
  • the base material of the substrate P itself comes into contact with the liquid 1
  • the base material of the substrate P itself for example, the silicon substrate
  • a part of components of the base material for example, silicon
  • the liquid recovery section 21 discharges the recovered liquid 1 to the outside. At least a part of the recovered liquid 1 may be cleaned by an internal processing apparatus, and then the cleaned liquid 1 may be returned to the liquid supply section 11 .
  • the foreign matter such as the particles, which has a size larger than the meshes of the mesh filter 25 provided on the recovery port 24 of the nozzle member 30 shown in FIG. 1 and which enters into and mixes with the liquid 1 of the liquid immersion area AR 2 , might adhere to and remain on, for example, the surface (outer surface) of the mesh filter 25 . Further, the foreign matter sometimes adheres, for example, to the liquid contact area of the nozzle member 30 other than the mesh filter 25 . It is feared that the foreign matter, which remains as described above, might enter into and mix with the liquid 1 of the liquid immersion area AR 2 again during the exposure of the substrate P. If the foreign matter, which entered into and mixed with the liquid 1 , adheres onto the substrate P, it is feared that any deficiency including the shape defect, etc. might arise in the pattern to be formed on the substrate P.
  • the exposure apparatus EX of this embodiment executes the cleaning of the foreign matter remaining on the nozzle member 30 during the maintenance performed periodically or requested, for example, by an operator for the liquid supply mechanism 10 , the liquid recovery mechanism 20 , etc. as follows in accordance with the sequence shown in FIG. 9A .
  • the particle level of the liquid recovered by the liquid recovery section 21 may be always monitored, and the following maintenance including the cleaning operation may be executed when the particle level exceeds a predetermined allowable range.
  • a particle counter which measures the number of foreign matters (particles) may be provided at an intermediate portion of the recovery tube 22 via a branch tube, and the number of particles in the recovered liquid may be monitored.
  • the particle counter measures the number of particles in the liquid, such that the liquid in a predetermined volume is extracted at a predetermined sampling rate from the recovered liquid, the laser beam is irradiated onto the extracted liquid, and the image of the scattered light is subjected to the image processing.
  • the following cleaning operation may be performed at every convenience during the exchange of the substrate P on the substrate stage PST. Further, for example, a portion of the nozzle member 30 , which is dirtied to a great extent, may be previously detected by using the observing device 67 shown in FIG. 4 , and only the portion dirtied to the great extent may be cleaned during the cleaning operation.
  • Step 301 shown in FIG. 9A the measuring table MTB of the measuring stage MST is allowed to make tight contact with (or make approach closely to) the substrate holder PH on the substrate stage PST as shown in FIG. 6 in a state that the radiation of the exposure light EL is stopped. Subsequently, the substrate stage PST and the measuring table MTB (measuring stage MST) are simultaneously moved in the +X direction to move the recess 60 A of the measuring table MTB to the position disposed just under the projection optical system PL (moving step). After that, the substrate stage PST may be further retracted in the +X direction. As a result, as shown in FIG.
  • the jet nozzle portion 90 in the recess 60 A on the measuring table MTB is moved to the bottom surface (moved to a position corresponding to the bottom surface or to a position opposite to or facing the bottom surface) of the recovery port 24 (mesh filter 25 ) of the nozzle member 30 which is supported by the unillustrated column mechanism via the support members 33 A, 33 B (coated with the liquid-repellent coat) to surround the optical element 2 disposed at the end portion of the projection optical system PL.
  • Step 302 in the same manner as performed during the exposure in accordance with the liquid immersion method (provided that the exposure light EL is not radiated), the liquid 1 is supplied to the space between the upper surface of the measuring table MTB and the optical element 2 of the projection optical system PL and the bottom surface of the nozzle member 30 which surrounds the optical element 2 , via the supply ports 13 , 14 of the nozzle member 30 from the liquid supply mechanism 10 shown in FIG. 1 , to form the liquid immersion area AR 2 as shown in FIG. 7B (liquid immersion step).
  • the valve 28 shown in FIG. 1 is closed and the valve 23 shown in FIG.
  • the valve 64 C shown in FIG. 4 may be opened to recover the liquid 1 in the recess 60 A, via the recovery flow passage 87 and the piping 63 C shown in FIG. 4 , by the recovery device 65 .
  • Step 303 in accordance with the control by the controller 61 , the valve 64 B is closed and the valve 64 A is opened to jet the cleaning liquid 1 B toward the mesh filter 25 in the recovery port 24 of the nozzle member 30 as shown in FIG. 7C from the jetting device 62 via the piping 63 A, the supply flow passage 86 , and the jet nozzle portion 90 .
  • the cleaning liquid 1 B which is allowed to inflow into the recess 60 A, is recovered by the recovery device 65 via the recovery flow passage 87 and the piping 63 C shown in FIG. 4 .
  • the jetting of the cleaning liquid 1 B jetted from the jet nozzle portion 90 and the recovery of the cleaning liquid 1 B in the recess 60 A are performed as described above, while the measuring stage MST shown in FIG. 4 is driven in the X direction and the Y direction.
  • the jet nozzle portion 90 is moved relative to and along the supply ports 13 , 14 and the rectangular frame-shaped recovery port 24 of the nozzle member 30 . Accordingly, the cleaning liquid 1 B is jetted against the entire surfaces of the mesh filter 25 and the supply ports 13 , 14 (cleaning step). As shown in FIG.
  • the liquid 1 in the liquid immersion area AR 2 may be recovered by the liquid recovery mechanism 20 shown in FIG. 1 .
  • the cleaning liquid 1 B may be recovered by the liquid recovery mechanism 20 instead of the recovery of the cleaning liquid 1 B by the recovery device 65 or concurrently therewith.
  • the supply and recovery operations for supplying and recovering the liquid 1 with respect to the liquid immersion area AR 2 may be continuously performed during the cleaning operation (especially during the jetting operation for jetting the cleaning liquid 1 B).
  • the cleaning liquid 1 B is supplied to the recovery port 24 and the supply ports 13 , 14 of the nozzle member 30 . Therefore, it is possible to remove, together with the cleaning liquid 1 B, at least a part of the foreign matter accumulated in the nozzle member 30 or deposited on the surface of the nozzle member 30 when the exposure is performed by the liquid immersion method. In this procedure, the liquid immersion area AR 2 is formed previously or partially concurrently. Therefore, it is possible to easily exfoliate and remove the foreign matter adhered to the nozzle member 30 . Further, it is also possible to avoid the contamination or pollution of the exposure apparatus which would be otherwise caused due to the spatter, scattering, etc. of the cleaning liquid.
  • the liquid supply ports 13 , 14 and the recovery port 24 are provided on distinct nozzle members, it is also allowable that only one of the nozzle members is cleaned in the cleaning step. Further, in relation to the exposure apparatus EX, it is also allowable that the cleaning liquid is jetted from the jet nozzle portion 90 against the cleaning objective portion including at least a part of the portion (liquid contact portion) which has the possibility which comes into contact with the liquid 1 during the exposure based on the liquid immersion method. Also in this case, the amount of the foreign matter in the liquid is decreased during the exposure to be performed thereafter.
  • the cleaning objective portion is not limited to other liquid contact portion of the nozzle member 30 different from the mesh filter 25 (recovery port 24 ) and the supply ports 13 , 14 .
  • the cleaning objective portion may be a member which is different from the nozzle member 30 , for example, a liquid contact portion of the optical element 2 , etc.
  • the cleaning liquid 1 B is jetted from the jet nozzle portion 90 . Therefore, it is possible to efficiently remove the foreign matter adhered to the nozzle member 30 .
  • the cleaning liquid 1 B may be jetted or spouted toward the cleaning objective portion from a simple jetting or spouting port, without using the jet nozzle portion 90 .
  • the measuring table MTB may be vibrated in at least one of the X direction, the Y direction, and the Z direction when the cleaning liquid 1 B is jetted against the nozzle member 30 .
  • the cleaning condition described above may include the presence or absence of the vibration of the measuring table MTB and/or the vibration condition.
  • a 3 In this embodiment, the cleaning liquid, which is supplied from the jetting device 62 shown in FIG. 4 , is jetted from the jet nozzle portion 90 .
  • a mixture of the cleaning liquid and the gas, which is supplied from the mixing jetting device 66 shown in FIG. 4 may be jetted from the jet nozzle portion 90 .
  • the gas such as nitrogen may be dissolved in the cleaning liquid.
  • a 4 The nozzle member 30 of this embodiment is arranged to surround the optical element 2 closest to the image plane of the projection optical system PL. Further, the mesh filter 25 is provided for the recovery port 24 of the nozzle member 30 . In the cleaning step described above, the cleaning liquid 1 B is jetted against the mesh filter 25 , etc. In this procedure, the cleaning liquid 1 B may be also jetted against the lower surface of the optical element 2 . By doing so, it is also possible to remove the foreign matter adhered to the optical element 2 .
  • the cleaning operation described above includes the operation for recovering the cleaning liquid 1 B jetted from the jet nozzle portion 90 (recovery step). Therefore, it is possible to discharge the cleaning liquid 1 B to and with which the foreign matter entered and mixed, to the outside.
  • the recovery mechanism for the cleaning liquid 1 B (mechanism including the recovery device 65 shown in FIG. 4 ) is provided on the side of the measuring stage MST.
  • the sucking port for the cleaning liquid may be provided, for example, in the vicinity of the nozzle member 30 .
  • the liquid recovery section 21 shown in FIG. 1 can be used also as a device or apparatus for sucking the cleaning liquid form the sucking port. Accordingly, it is possible to simplify the construction of the measuring stage MST (movable member).
  • the type of the liquid 1 for the liquid-immersion exposure is different from the type of the cleaning liquid 1 B. Therefore, a liquid such as a solvent, which has the high cleaning effect, can be used as the cleaning liquid 1 B.
  • the liquid 1 itself can be used also as the cleaning liquid 1 B.
  • the liquid supply section 11 shown in FIG. 1 can be used also as the cleaning liquid supply section 26 shown in FIG. 1 and the accumulating section 62 a of the jetting device 62 shown in FIG. 4 . It is possible to simplify the construction of the supply mechanism for the liquid and the cleaning liquid.
  • An exposure apparatus of this embodiment is basically constructed in the same manner as the exposure apparatus EX shown in FIG. 1 .
  • the exposure apparatus of this embodiment differs in the cleaning mechanism provided on the side of the measuring stage MST shown in FIG. 1 in order to clean the nozzle member 30 .
  • components or parts shown in FIG. 8 which correspond to those shown in FIG. 4 and FIG. 7A , are designated by the same reference numerals, any detailed explanation of which will be omitted.
  • FIG. 8A shows a sectional view of the nozzle member 30 provided to surround the optical element 2 of the projection optical system PL and a measuring table MTB of a measuring stage MST of this embodiment (see FIG. 1 ).
  • the liquid 1 is supplied from the liquid supply mechanism 10 shown in FIG. 1 via the nozzle member 30 during the exposure based on the liquid immersion method and the liquid 1 is recovered by the liquid recovery mechanism 20 , thereby forming the liquid immersion area AR 2 to include the space between the optical element 2 of the projection optical system PL and the bottom surface of the nozzle member 30 and the surface of the substrate (not shown) opposite thereto.
  • a recovery flow passage 87 A is formed to extend from a central portion in the X direction (scanning direction) of the upper surface of the measuring-table body 159 to a side surface in the ⁇ X direction of the measuring table MTB.
  • a check valve 89 is provided at an intermediate portion of the recovery flow passage 87 A so that the liquid is not allowed to flow upwardly (in the +Z direction).
  • a recess 60 A is formed on the upper surface of the measuring table 159 in the vicinity of an opening communicated with the recovery flow passage 87 A.
  • a jet nozzle portion 90 is fixed to a central portion of the recess 60 A.
  • the bottom portion of the recess 60 A is connected by a recovery flow passage 87 B to a portion of the recovery flow passage 87 A located above the check valve 89 .
  • An inflow port for the liquid which is disposed at the bottom portion of the jet nozzle portion 90 in the recess 60 A, is communicated with a cylinder portion 91 for accumulating the liquid via a supply flow passage 86 formed in the measuring table MTB and an external supply tube 63 E.
  • the recovery flow passage 87 A is communicated with the cylinder portion 91 from the side surface of the measuring table MTB via a recovery tube 63 F to which a dust-removing or dust-proof filter 88 is installed.
  • a piston portion 92 which is pushed and pulled by an unillustrated driving section (controlled by the controller 61 shown in FIG. 4 ), is installed to the cylinder portion 91 .
  • the accumulating mechanism for the liquid 1 is constructed to include the recovery flow passage 87 A, the check valve 89 , the recovery tube 63 F, the cylinder portion 91 , the piston portion 92 , and a driving section (not shown) therefor.
  • the jetting device for the liquid 1 is constructed to include the jet nozzle portion 90 , the supply flow passage 86 , the supply tube 63 E, the cylinder portion 91 , the piston portion 92 , and a driving section (not shown) therefor.
  • the cleaning mechanism of this embodiment is constructed to include the accumulating mechanism and the jetting device.
  • the accumulating mechanism for the liquid 1 which includes the recovery tube 63 F, the cylinder portion 91 , and the piston portion 92 , is used also as the recovery mechanism for the liquid jetted from the jet nozzle portion 90 and allowed to inflow into the recess 60 A, together with the recovery flow passage 87 B.
  • a temperature adjusting section for adjusting the temperature of the liquid 1 may be provided, for example, between the supply tube 63 E and the cylinder portion 91 to adjust the temperature of the liquid jetted from the jet nozzle portion 90 .
  • a mixing section for mixing (or dissolving) a gas such as the air into (or in) the liquid 1 may be provided, for example, between the supply tube 63 E and the cylinder portion 91 to mix the gas (bubbles) into the liquid jetted from the jet nozzle portion 90 .
  • a cleaning liquid which is obtained by mixing the liquid 1 , for example, with a solvent such as thinner or IPA, may be jetted from the jet nozzle portion 90 .
  • the cleaning mechanism of this embodiment is not limited to the construction described above.
  • FIGS. 8A and 8B an explanation will be made with reference to FIGS. 8A and 8B about an exemplary operation to be performed in a case that the nozzle member 30 shown in FIG. 1 is cleaned by using the cleaning mechanism of this embodiment when the maintenance is performed, for example, for the liquid supply mechanism 10 and the liquid recovery mechanism 20 shown in FIG. 1 .
  • the measuring stage MST is driven in a state that the radiation of the exposure light EL is stopped so as to move the opening of the recovery flow passage 87 A of the measuring table MTB to the bottom surface (to a position corresponding to the bottom surface or to a position opposite to or facing the bottom surface) of the projection optical system PL (moving step).
  • the piston portion 92 of the cylinder portion 91 is pushed to the limit, and the liquid 1 is not accumulated in the cylinder portion 91 .
  • the liquid 1 is supplied to the space between the upper surface of the measuring table MTB and the optical element 2 of the projection optical system PL and the bottom surface of the nozzle member 30 surrounding the optical element 2 , via the supply ports 13 , 14 of the nozzle member 30 from the liquid supply mechanism 10 shown in FIG. 1 , to form the liquid immersion area AR 2 (liquid immersion step).
  • the piston portion 92 of the cylinder portion 91 is gradually pulled to the limit so that the liquid 1 in the liquid immersion area AR 2 is accumulated in the cylinder portion 91 via the recovery flow passage 87 A and the recovery tube 63 F (accumulating step).
  • the liquid 1 is supplied from the liquid supply mechanism 10 shown in FIG. 1 , at a volume of not less than the volume of the cylinder portion 91 .
  • the piston portion 92 of the cylinder portion 91 is gradually pushed so that the liquid 1 accumulated in the cylinder portion 91 is jetted toward the mesh filter 25 in the recovery port 24 of the nozzle member 30 , via the supply tube 63 E, the supply flow passage 86 , and the jet nozzle portion 90 .
  • the measuring stage MST shown in FIG. 4 is driven in the X direction and the Y direction while jetting the liquid 1 from the jet nozzle portion 90 as described above, thereby moving, as shown in FIG. 8B , the jet nozzle portion 90 along and relative to the rectangular frame-shaped recovery port 24 and the supply ports 13 , 14 of the nozzle member 30 . Accordingly, the liquid 1 is jetted against the entire surfaces of the mesh filter 25 and the supply ports 13 , 14 (cleaning step). In this procedure, the liquid 1 does not cause any backflow in the recovery flow passage 87 A, because the check valve 89 is provided.
  • the liquid 1 in the cylinder portion 91 When the liquid 1 in the cylinder portion 91 is decreased in the middle of or during the process, then the liquid 1 may be supplied to the liquid immersion area AR 2 via the nozzle member 30 from the liquid supply mechanism 10 shown in FIG. 1 , and the interior of the cylinder portion 91 may be supplemented with the liquid 1 by pulling the piston portion 92 as shown in FIG. 8A . During this process, the liquid 1 allowed to inflow into the recess 60 A is also recovered. The liquid 1 can be jetted from the jet nozzle portion 90 again by pulling the piston portion 92 thereafter.
  • a 7 The liquid 1 , which is supplied from the liquid supply mechanism 10 shown in FIG. 1 via the nozzle member 30 to the liquid immersion area AR 2 , is used as the cleaning liquid for cleaning the nozzle member 30 . Therefore, it is possible to simplify the supply mechanism for the cleaning liquid.
  • This construction is equivalent to the construction in which the liquid 1 is previously supplied to the liquid contact portion. Therefore, it is possible to efficiently remove the foreign matter adhered to the interior of the nozzle member 30 . Therefore, it is possible to efficiently perform the maintenance for the liquid supply mechanism 10 and the liquid recovery mechanism 20 (as well as the maintenance for the exposure apparatus) or the cleaning of the nozzle member 30 .
  • the liquid may be jetted from the jet nozzle portion 90 against the cleaning objective portion including at least a part of the liquid contact portion. With this also, the amount of the foreign matter is decreased in the liquid during the exposure to be performed thereafter.
  • the cleaning objective portion is not limited to other liquid contact portion of the nozzle member 30 different from the mesh filter 25 (recovery port 24 ) and the supply ports 13 , 14 .
  • the cleaning objective portion may be a member different from the nozzle member 30 , for example, a liquid contact portion of the optical element 2 , etc.
  • a 8 In this embodiment, as shown in FIG. 8A , the liquid 1 is jetted from the jet nozzle portion 90 , and hence the high cleaning effect is obtained. It is also possible to use, for example, a member which merely jets or spouts the liquid 1 , instead of the jet nozzle portion 90 .
  • a 9 In this embodiment, as shown in FIG. 8A , the check valve 89 is provided in the recovery flow passage 87 A. Therefore, the cylinder portion 91 and the piston portion 92 can be used also for the accumulating mechanism and the jetting device for the liquid 1 . For example, instead of the check valve 89 , it is allowable to provide a valve which opens/closes the recovery tube 63 F.
  • the cylinder portion 91 and the piston portion 92 may be individually provided for each of the accumulating mechanism and the jetting device for the liquid 1 .
  • the cylinder portion 91 and the piston portion 92 may be individually provided for each of the accumulating mechanism and the jetting device for the liquid 1 .
  • the jetting mechanism for the liquid 1 on the measuring stage MST.
  • a small-sized pump for jetting the liquid 1 is provided on the measuring table MTB beforehand.
  • the operation, in which the liquid 1 is supplied from the liquid supply mechanism 10 shown in FIG. 1 via the supply ports 13 , 14 shown in FIG. 8A , and the supplied liquid 1 is jetted by the small-sized pump against the bottom surface of the nozzle member 30 , etc. (at least a part of the liquid contact portion), may be continuously repeated.
  • the liquid 1 which is jetted on the measuring table MTB, may be circulated and jetted again.
  • the small-sized pump is provided on the measuring table MTB, it is possible to miniaturize the stage mechanism as a whole.
  • the measuring stage MST is moved to move the jet nozzle portion 90 , which jets the cleaning liquid 1 B or the liquid 1 , relative to the nozzle member 30 .
  • the nozzle member 30 is made to be movable; and that the nozzle member 30 may be moved, relative to the jet nozzle portion 90 , on the measuring stage MST (or the substrate stage PST) while the measuring stage MST does not move.
  • both of the nozzle member 30 and the measuring stage MST may be moved.
  • the liquid of the liquid immersion area AR 2 may be vibrated to enhance the cleaning effect, instead of the relative movement of the nozzle member 30 and the measuring stage MST or in combination therewith.
  • an ultrasonic vibrator including, for example, a piezoelectric ceramics (those based on the barium titanate system, the lead titanate zirconate system, etc. (so-called PZT)) or a ferrite vibrator (electrostrictive vibrator).
  • PZT piezoelectric ceramics
  • ferrite vibrator electrostatic vibrator
  • the vibration of the liquid of the liquid immersion area AR 2 and the jetting of the cleaning liquid 1 B or the liquid 1 may be performed concurrently at least partially.
  • the liquid of the liquid immersion area AR 2 may be vibrated prior to the jetting of the cleaning liquid 1 B or the liquid 1 .
  • the liquid immersion area AR 2 is formed with the liquid 1 during the cleaning operation.
  • the liquid immersion area AR 2 may be formed with a liquid which is different from the liquid for the liquid immersion exposure, for example, the cleaning liquid supplied from the cleaning liquid supply section 26 or the cleaning mechanism described above.
  • the cleaning liquid which is of the same type as that of the cleaning liquid of the liquid immersion area AR 2 , may be jetted.
  • the liquid immersion area AR 2 is formed during the cleaning operation.
  • the liquid contact portion may be cleaned without forming the liquid immersion area AR 2 .
  • a member may be arranged to suppress or avoid the scattering or spatter of the liquid colliding against the liquid contact portion, or a gas barrier may be formed to surround the cleaning objective area of the liquid contact portion.
  • the cleaning mechanism adopts the liquid jetting system.
  • the cleaning mechanism may adopt a cleaning system different from the liquid jetting system.
  • the cleaning objective is the liquid contact portion which comes into contact with the liquid 1 for the liquid immersion exposure.
  • a portion, which does not come into contact with the liquid 1 may be designated as the cleaning objective.
  • the mesh filter 25 which is arranged at the recovery port 24 of the nozzle member 30 , may be exchangeable.
  • the porous member, which is installed to the recovery port 24 , etc. is the mesh filter 25 (mesh-shaped filter member), then the foreign matter can be removed efficiently, and the adhered foreign matter can be also cleaned out with ease.
  • the porous member which is arranged at the recovery port 24 of the nozzle member 30 , etc., is not limited to the mesh filter 25 . That is, it is also possible to use, for example, a porous member formed of sponge, etc. or a porous member or the like provided with an exchangeable cartridge type filter (for example, a ceramics filter), instead of the mesh filter 25 .
  • the portion, at which the porous member is arranged, is not limited to only the recovery port 24 or the like.
  • the controller CONT shown in FIG. 1 drives the liquid recovery mechanism 20 , and all of the liquid 1 is discharged beforehand from the flow passages for the liquid 1 including the recovery flow passage 84 and the supply flow passages 82 A, 82 B in the nozzle member 30 shown in FIG. 3 . This makes it possible to avoid the remaining in the nozzle member 30 of the foreign matter eluted from the mesh filter 25 into the liquid 1 during the exchange of the mesh filter 25 .
  • the measuring stage MST includes, as the measuring members, the reference mark and at least one of the plurality of measuring devices described above in addition to the cleaning mechanism.
  • the type and/or the number, etc. of the measuring member or members to be provided on the measuring stage MST is not limited to this.
  • the measuring member it is also allowable to provide, for example, a transmittance measuring device for measuring the transmittance of the projection optical system PL. Only a part or parts of the measuring devices may be provided on the measuring stage MST, and the remaining part or parts may be provided outside the measuring stage MST. Further, at least one measuring device may be provided on the substrate stage PST.
  • the cleaning mechanism is provided on the measuring stage MST.
  • at least a part of the cleaning mechanism may be provided on a movable stage (movable member, movable element) which is independent from the measuring stage MST.
  • the movable stage may be the substrate stage PST, or the movable stage may be different from the substrate stage PST.
  • the movable stage may be arranged to be opposite to the projection optical system PL by being exchanged with the substrate stage PST.
  • the interferometer system ( 56 A to 56 C) is used to measure the respective pieces of position information about the mask stage RST, the substrate stage PST, and the measuring stage MST.
  • an encoder system for detecting a scale (diffraction grating) provided on each of the stages.
  • a hybrid system including both of the interferometer system and the encoder system is provided, and the measurement result of the encoder system is calibrated (subjected to the calibration) by using the measurement result of the interferometer system.
  • the position control of the stage may be performed by switchingly using the interferometer system and the encoder system or using both of the interferometer system and the encoder system.
  • the substrate holder PH may be formed integrally with the substrate stage PST.
  • the substrate holder PH and the substrate stage PST may be constructed separately, and the substrate holder PH may be fixed to the substrate stage PST, for example, by the vacuum attraction, etc.
  • the present invention is also applicable to an exposure apparatus in which various measuring devices are provided on the substrate stage PST (exposure apparatus not provided with the measuring stage MST). Further, only a part or parts of various measuring devices may be provided on the measuring stage MST or the substrate stage PST, and the remaining part or parts may be provided at the outside of the measuring stage MST or the substrate stage PST or on another member different from the measuring stage MST or the substrate stage PST. In the case of these constructions, for example, the cleaning mechanism including the jet nozzle portion 90 shown in FIG. 4 may be provided on the side of the substrate stage PST.
  • the irradiation area (including the illumination area and the projection area AR 1 described above) of the exposure light EL is rectangular.
  • the radiation area may be circular arc-shaped.
  • the irradiation area (AR 1 , etc.) is defined to include the optical axis AX in the field of the projection optical system PL.
  • the irradiation area (AR 1 , etc.) may be defined eccentrically, without including the optical axis AX.
  • the microdevice such as the semiconductor device is produced by performing a step 201 of designing the function and the performance of the microdevice; a step 202 of manufacturing a mask (reticle) based on the designing step; a step 203 of producing a substrate as a base material for the device; a substrate-processing step 204 including a step of exposing the substrate with the pattern of the mask by the exposure apparatus EX of the embodiment described above, a step of developing the exposed substrate, a step of heating (curing) and etching the developed substrate, etc.; a step 205 of assembling the device (including processing processes such as a dicing step, a bonding step, and a packaging step, etc.); an inspection step 206 ; etc.
  • the substrate P is not limited to only the semiconductor wafer for producing the semiconductor device. Those applicable include a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, a master plate (synthetic silica glass, silicon wafer) for the mask or the reticle to be used for the exposure apparatus, a film member, etc. Further, the shape of the substrate P is not limited to only the circular shape, and may be other shape including rectangular shapes, etc.
  • the mask on which the transferring pattern is formed, is used.
  • an electronic mask which forms a transmissive pattern or a reflective pattern based on an electronic data of the pattern to be subjected to the exposure as disclosed, for example, in U.S. Pat. No. 6,778,257.
  • the electronic mask is also referred to as “variable shaped mask” (“active mask”, or “image generator”), which includes DMD (Digital Micro-mirror Device), etc. as one of the no light-emitting image display device (spatial light modulator).
  • DMD has a plurality of reflecting elements (micro-mirrors) which are driven based on predetermined electronic data.
  • the plurality of reflecting elements are arranged in a two-dimensional matrix form on a surface of DMA, and are driven individually (element by element) to reflect and deflect the exposure light. Angles of the reflecting surfaces of the respective reflecting elements are adjusted.
  • the operation of DMD may be controlled by the controller CONT.
  • the controller CONT drives the reflecting elements of DMD based on the electronic data (pattern information) corresponding to the pattern to be formed on the substrate P, and patterns the exposure light radiated by the illumination system IL by the reflecting elements.
  • the present invention is also applicable to a scanning type exposure apparatus (scanning stepper) of the step-and-scan system which performs the scanning exposure with the pattern of the mask M by synchronously moving the mask M and the substrate P as well as a projection exposure apparatus (stepper) of the step-and-repeat system which performs the full field exposure with the pattern of the mask M in a state that the mask M and the substrate P are allowed to stand still, while successively step-moving the substrate P.
  • the type of the exposure apparatus EX the present invention is not limited to the exposure apparatus for the semiconductor device production which exposes the substrate P with the semiconductor device pattern.
  • the present invention is also widely applicable, for example, to an exposure apparatus for producing a liquid crystal display device or for producing a display as well as an exposure apparatus for producing a thin film magnetic head, a micromachine, MEMS, a DNA chip, an image pickup device (CCD), a reticle, or a mask, etc.
  • the present invention is also applicable to an exposure apparatus of the multi-stage type provided with a plurality of substrate stages as disclosed, for example, in Japanese Patent Application Laid-open No. 10-163099, Japanese Patent Application Laid-open No. 10-214783 (corresponding to U.S. Pat. Nos. 6,341,007, 6,400,441, 6,549,269, and 6,590,634), Published Japanese Translation of PCT International Publication for Patent Application No. 2000-505958 (corresponding to U.S. Pat. No. 5,969,441), and U.S. Pat. No. 6,208,407.
  • the contents of the United States patents described above are incorporated herein by reference within a range of permission of the domestic laws and ordinances of the designated state or the selected state in relation to the exposure apparatus of the multi-stage type.
  • the optical path space (liquid immersion space), which is disposed on the image plane side of the optical element arranged at the end portion, is filled with the liquid.
  • the optical path space disposed on the mask side of the optical element arranged at the end portion is also filled with the liquid, as disclosed, for example, in International Publication No. 2004/019128.
  • the present invention is also applicable to an exposure apparatus of the liquid immersion type in which the liquid immersion area, which is between the projection optical system and the substrate, is held or retained by an air curtain arranged therearound as disclosed, for example, in International Publication No. 2004/093159 and United States Patent Application Publication No. 2006/0023189A1.
  • the present invention is also applicable to an exposure apparatus in which a line-and-space pattern is formed on the substrate P by forming interference fringes on the substrate P as disclosed, for example, in International Publication No. 2001/035168. Also in this case, the exposure light is irradiated onto the substrate P via the liquid between the optical member and the substrate P.
  • the present invention is also applicable to an exposure apparatus in which patterns of two masks are combined on the substrate via the projection optical system, and one shot area on the substrate is subjected to the double exposure substantially simultaneously by one time of the scanning exposure as disclosed, for example, in Published Japanese Translation of PCT International Publication for Patent Application No. 2004-519850 (corresponding to U.S. Pat. No. 6,611,316).
  • the liquid supply section and/or the liquid recovery section is/are provided on the exposure apparatus.
  • an equipment of the factory or the like in which the exposure apparatus is installed may be substitutively used.
  • the structures required for the liquid immersion exposure are not limited to the structures as described above. It is possible to use those described, for example, in European Patent Publication No. 1420298, International Publication Nos. 2004/055803 and 2004/057590, International Publication No. 2005/029559 (corresponding to United States Patent Publication No. 2006/0231206), International Publication No. 2004/086468 (corresponding to United States Patent Publication No. 2005/0280791), and Japanese Patent Application Laid-open No. 2004-289126 (corresponding to U.S.
  • liquid 1 to be used for the liquid immersion method a liquid having the refractive index with respect to the exposure light higher than that of water, for example, those having the refractive index of about 1.6 to 1.8.
  • the liquid 1 which has the refractive index (for example, not less than 1.5) higher than that of pure water, includes, for example, predetermined liquids having the C—H bond or the O—H bond such as isopropanol having a refractive index of about 1.50 and glycerol (glycerin) having a refractive index of about 1.61, predetermined liquids (organic solvents) such as hexane, heptane, and decane, and decalin (decahydronaphthalene) having a refractive index of about 1.60.
  • predetermined liquids having the C—H bond or the O—H bond such as isopropanol having a refractive index of about 1.50 and glycerol (glycerin) having a refractive index of about 1.61
  • predetermined liquids (organic solvents) such as hexane, heptane, and decane
  • decalin decahydronaphthalene
  • the liquid 1 it is also allowable to use those obtained by mixing arbitrary two or more liquids of the foregoing liquids, and it is also allowable to use those obtained by adding (mixing) at least one of the foregoing liquids to (with) pure water. Further, as for the liquid 1 , it is also allowable to use those obtained by adding (mixing) base or acid such as H + , Cs + , K + , Cl ⁇ , SO 4 2 ⁇ , and PO 4 2 ⁇ to (with) pure water, and it is also allowable to use those obtained by adding (mixing) fine particles of Al oxide or the like to (with) pure water.
  • base or acid such as H + , Cs + , K + , Cl ⁇ , SO 4 2 ⁇ , and PO 4 2 ⁇
  • the liquid 1 it is preferable to use those which have small coefficient of light absorption, which have small temperature dependency, and which are stable against the photosensitive material (or the top coat film, the antireflection film, etc.) coated on the surface of the substrate P and/or the projection system PL.
  • the liquid 1 it is also possible to use a supercritical fluid.
  • the substrate P it is possible to provide, for example, the top coat film which protects the photosensitive material and the base material from the liquid.
  • the optical element (terminal end optical element) 2 of the projection optical system PL may be formed of, for example, silica glass (silica) or a single crystal material of a fluorine compound such as barium fluoride, strontium fluoride, lithium fluoride, and sodium fluoride, instead of calcium fluoride.
  • the optical element (terminal end optical element) 2 may be formed of a material having a refractive index (for example, not less than 1.6) higher than those of silica glass and calcium fluoride.
  • Those usable as the material having the refractive index of not less than 1.6 include sapphire, germanium dioxide, etc. as disclosed, for example, in International Publication No. 2005/059617, and potassium chloride (refractive index: about 1.75) as disclosed in International Publication No. 2005/059618.
  • the optical path disposed on the object plane side of the terminal end optical element is also filled with the liquid, in addition to the optical path disposed on the image plane side of the terminal end optical element as disclosed, for example, in International Publication No. 2004/019128 (corresponding to United States Patent Publication No. 2005/0248856).
  • a thin film which has the lyophilic or liquid-attractive property and/or the anti-dissolution function, may be formed on a part (including at least the contact surface which comes into contact with the liquid) or all of the surface of the terminal end optical element.
  • the silica glass has high affinity for the liquid, and any anti-dissolution film is not required for the silica glass as well. However, for calcium fluoride, it is preferable to form at least the anti-dissolution film.
  • the ArF excimer laser is used as the light source for the exposure light EL.
  • a high harmonic wave-generating device which includes a solid laser light source such as a DFB semiconductor laser or a fiber laser, a light-amplifying section having a fiber amplifier or the like, and a wavelength-converting section, etc. and which outputs a pulse light beam having a wavelength of 193 nm as disclosed, for example, in International Publication No. 1999/46835 (corresponding to U.S. Pat. No. 7,023,610).
  • the projection area is rectangular.
  • the exposure apparatus EX is produced by assembling the various subsystems including the respective constitutive elements as defined in claims so that the predetermined mechanical accuracy, electric accuracy and optical accuracy are maintained.
  • those performed before and after the assembling include the adjustment for achieving the optical accuracy for the various optical systems, the adjustment for achieving the mechanical accuracy for the various mechanical systems, and the adjustment for achieving the electric accuracy for the various electric systems.
  • the steps of assembling the various subsystems into the exposure apparatus include the mechanical connection, the wiring connection of the electric circuits, the piping connection of the air pressure circuits in correlation with the various subsystems, etc.
  • the steps of assembling the respective individual subsystems are performed before performing the steps of assembling the various subsystems into the exposure apparatus.
  • the overall adjustment is performed to secure the various accuracies as the entire exposure apparatus. It is desirable that the exposure apparatus is produced in a clean room in which the temperature, the cleanness, etc. are managed.
  • the present invention it is possible to efficiently perform the maintenance for the exposure apparatus which performs the exposure in accordance with the liquid immersion method. Therefore, the amount of the foreign matter in the liquid of the liquid immersion area is decreased during the exposure to be performed thereafter, and it is possible to produce the device highly accurately.
US12/314,317 2006-06-30 2008-12-08 Maintenance method, exposure method and apparatus and device manufacturing method Abandoned US20090103064A1 (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140185023A1 (en) * 2012-12-27 2014-07-03 Samsung Display Co., Ltd. Apparatus for removing solvent and photolithography apparatus using the same
US20150241789A1 (en) * 2014-02-25 2015-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. In-line inspection and clean for immersion lithography
WO2018203066A1 (en) * 2017-05-04 2018-11-08 Imrali Ahmet Slide cleaner
WO2020064265A1 (en) 2018-09-24 2020-04-02 Asml Netherlands B.V. A process tool and an inspection method

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US7900641B2 (en) 2007-05-04 2011-03-08 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US20090025753A1 (en) 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus And Contamination Removal Or Prevention Method
US7916269B2 (en) 2007-07-24 2011-03-29 Asml Netherlands B.V. Lithographic apparatus and contamination removal or prevention method
NL1035942A1 (nl) 2007-09-27 2009-03-30 Asml Netherlands Bv Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus.
SG151198A1 (en) 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
NL1036273A1 (nl) 2007-12-18 2009-06-19 Asml Netherlands Bv Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus.
NL1036306A1 (nl) 2007-12-20 2009-06-23 Asml Netherlands Bv Lithographic apparatus and in-line cleaning apparatus.
US8339572B2 (en) 2008-01-25 2012-12-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL2005666A (en) 2009-12-18 2011-06-21 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
US20120013864A1 (en) * 2010-07-14 2012-01-19 Nikon Corporation Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium
CN105142633A (zh) 2013-03-26 2015-12-09 橘生药品工业株式会社 西洛多辛苦味被掩蔽的口服给药制剂

Citations (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4465368A (en) * 1981-01-14 1984-08-14 Nippon Kogaku K.K. Exposure apparatus for production of integrated circuit
US6208407B1 (en) * 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
US6341007B1 (en) * 1996-11-28 2002-01-22 Nikon Corporation Exposure apparatus and method
US20020041377A1 (en) * 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
US20020061469A1 (en) * 1997-06-25 2002-05-23 Nikon Corporation Projection apparatus, method of manufacturing the apparatus,method of exposure using the apparatus, and method of manufacturing circuit devices by using the apparatus
US6496257B1 (en) * 1997-11-21 2002-12-17 Nikon Corporation Projection exposure apparatus and method
US20050024609A1 (en) * 2003-06-11 2005-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6897963B1 (en) * 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
US6952253B2 (en) * 2002-11-12 2005-10-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050259232A1 (en) * 2004-05-18 2005-11-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050280791A1 (en) * 2003-02-26 2005-12-22 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20060028626A1 (en) * 2004-08-03 2006-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Megasonic immersion lithography exposure apparatus and method
US20060038968A1 (en) * 2004-08-19 2006-02-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060050351A1 (en) * 2004-09-06 2006-03-09 Tatsuhiko Higashiki Liquid immersion optical tool, method for cleaning liquid immersion optical tool, and method for manufacturing semiconductor device
US20060077367A1 (en) * 2003-05-23 2006-04-13 Nikon Corporation Exposure apparatus and method for producing device
US20060103818A1 (en) * 2004-11-18 2006-05-18 International Business Machines Corporation Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
US20060110689A1 (en) * 2004-11-23 2006-05-25 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion photolithography with megasonic rinse
US20060132731A1 (en) * 2004-12-20 2006-06-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060231206A1 (en) * 2003-09-19 2006-10-19 Nikon Corporation Exposure apparatus and device manufacturing method
US20060250588A1 (en) * 2005-05-03 2006-11-09 Stefan Brandl Immersion exposure tool cleaning system and method
US20070091287A1 (en) * 2005-10-24 2007-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
US20070127001A1 (en) * 2005-12-02 2007-06-07 Asml Netherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US20070285631A1 (en) * 2006-05-22 2007-12-13 Asml Netherland B.V Lithographic apparatus and lithographic apparatus cleaning method
US20080002164A1 (en) * 2006-06-29 2008-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
US20080018867A1 (en) * 2004-12-06 2008-01-24 Nikon Corporation Maintenance Method, Maintenance Device, Exposure Apparatus, and Device Manufacturing Method
US20090066922A1 (en) * 2006-05-18 2009-03-12 Nikon Corporation Exposure method and apparatus, maintenance method and device manufacturing method

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5243195A (en) 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
JP3200874B2 (ja) 1991-07-10 2001-08-20 株式会社ニコン 投影露光装置
JPH08313842A (ja) 1995-05-15 1996-11-29 Nikon Corp 照明光学系および該光学系を備えた露光装置
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
EP0890136B9 (en) 1996-12-24 2003-12-10 ASML Netherlands B.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
JPH1123692A (ja) 1997-06-30 1999-01-29 Sekisui Chem Co Ltd 地中探査用アンテナ
JPH1128790A (ja) 1997-07-09 1999-02-02 Asahi Chem Ind Co Ltd 紫外線遮蔽用熱可塑性樹脂板
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
US6020964A (en) 1997-12-02 2000-02-01 Asm Lithography B.V. Interferometer system and lithograph apparatus including an interferometer system
JP4264676B2 (ja) 1998-11-30 2009-05-20 株式会社ニコン 露光装置及び露光方法
IL138374A (en) 1998-03-11 2004-07-25 Nikon Corp An ultraviolet laser device and an exposure device that includes such a device
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
WO1999060361A1 (fr) 1998-05-19 1999-11-25 Nikon Corporation Instrument et procede de mesure d'aberrations, appareil et procede de sensibilisation par projection incorporant cet instrument, et procede de fabrication de dispositifs associe
KR100319892B1 (ko) 1999-06-30 2002-01-10 윤종용 데이터 출력 패스의 데이터 라인 상의 데이터를 래치하는 회로를 구비하는 반도체 메모리 장치 예컨대, 동기식 디램 및 이 반도체 메모리 장치의 데이터 래칭 방법
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
US6611316B2 (en) 2001-02-27 2003-08-26 Asml Holding N.V. Method and system for dual reticle image exposure
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
US20050059617A1 (en) 2001-09-17 2005-03-17 Takeshi Imanishi Novel anitsense oligonucleotide derivatives against to hepatitis c virus
WO2003040296A2 (en) 2001-11-08 2003-05-15 DeveloGen Aktiengesellschaft für entwicklungsbiologische Forschung Men protein, gst2, rab-rp1, csp, f-box protein lilina/fbl7, abc50, coronin, sec61 alpha, or vhappa1-1, or homologous proteins involved in the regulation of energy homeostasis
JP4214729B2 (ja) 2002-07-25 2009-01-28 コニカミノルタホールディングス株式会社 硬化性白インク組成物
WO2004019128A2 (en) 2002-08-23 2004-03-04 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US6893629B2 (en) 2002-10-30 2005-05-17 Isp Investments Inc. Delivery system for a tooth whitener
US7027919B2 (en) 2002-11-01 2006-04-11 Daniel Bernesi Vehicle and/or asset tracking and localization system and method
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
WO2004055803A1 (en) 2002-12-13 2004-07-01 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
EP1732075A3 (en) 2002-12-19 2007-02-21 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
JP4364805B2 (ja) 2002-12-19 2009-11-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 層上にスポットを照射する方法及び装置
JP2004304135A (ja) 2003-04-01 2004-10-28 Nikon Corp 露光装置、露光方法及びマイクロデバイスの製造方法
JP2005277363A (ja) * 2003-05-23 2005-10-06 Nikon Corp 露光装置及びデバイス製造方法
JP4305095B2 (ja) * 2003-08-29 2009-07-29 株式会社ニコン 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
CN103605262B (zh) 2004-06-09 2016-06-29 株式会社尼康 曝光装置及其维护方法、以及元件制造方法
JP2006032750A (ja) * 2004-07-20 2006-02-02 Canon Inc 液浸型投影露光装置、及びデバイス製造方法
KR101230712B1 (ko) 2004-08-03 2013-02-07 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
EP1794650A4 (en) 2004-09-30 2008-09-10 Nikon Corp OPTICAL PROJECTION DEVICE AND EXPOSURE DEVICE
JP2006182561A (ja) 2004-11-30 2006-07-13 Konica Minolta Business Technologies Inc 画像形成システム、画像形成装置、およびプログラム

Patent Citations (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4465368A (en) * 1981-01-14 1984-08-14 Nippon Kogaku K.K. Exposure apparatus for production of integrated circuit
US6341007B1 (en) * 1996-11-28 2002-01-22 Nikon Corporation Exposure apparatus and method
US20020061469A1 (en) * 1997-06-25 2002-05-23 Nikon Corporation Projection apparatus, method of manufacturing the apparatus,method of exposure using the apparatus, and method of manufacturing circuit devices by using the apparatus
US6496257B1 (en) * 1997-11-21 2002-12-17 Nikon Corporation Projection exposure apparatus and method
US6897963B1 (en) * 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
US6208407B1 (en) * 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
US20020041377A1 (en) * 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
US6952253B2 (en) * 2002-11-12 2005-10-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060023189A1 (en) * 2002-11-12 2006-02-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050280791A1 (en) * 2003-02-26 2005-12-22 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20060077367A1 (en) * 2003-05-23 2006-04-13 Nikon Corporation Exposure apparatus and method for producing device
US20050024609A1 (en) * 2003-06-11 2005-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060231206A1 (en) * 2003-09-19 2006-10-19 Nikon Corporation Exposure apparatus and device manufacturing method
US20050259232A1 (en) * 2004-05-18 2005-11-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060028626A1 (en) * 2004-08-03 2006-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Megasonic immersion lithography exposure apparatus and method
US20060038968A1 (en) * 2004-08-19 2006-02-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060050351A1 (en) * 2004-09-06 2006-03-09 Tatsuhiko Higashiki Liquid immersion optical tool, method for cleaning liquid immersion optical tool, and method for manufacturing semiconductor device
US20070039637A1 (en) * 2004-09-06 2007-02-22 Tatsuhiko Higashiki Liquid immersion optical tool, method for cleaning liquid immersion optical tool, liquid immersion exposure method and method for manufacturing semiconductor device
US20090284718A1 (en) * 2004-09-06 2009-11-19 Kabushiki Kaisha Toshiba Liquid Immersion Optical Tool, Method for Cleaning Liquid Immersion Optical Tool, Liquid Immersion Exposure Method and Method for Manufacturing Semiconductor Device
US20060103818A1 (en) * 2004-11-18 2006-05-18 International Business Machines Corporation Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
US20060110689A1 (en) * 2004-11-23 2006-05-25 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion photolithography with megasonic rinse
US20080018867A1 (en) * 2004-12-06 2008-01-24 Nikon Corporation Maintenance Method, Maintenance Device, Exposure Apparatus, and Device Manufacturing Method
US20080002162A1 (en) * 2004-12-20 2008-01-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060132731A1 (en) * 2004-12-20 2006-06-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20110109887A1 (en) * 2004-12-20 2011-05-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060250588A1 (en) * 2005-05-03 2006-11-09 Stefan Brandl Immersion exposure tool cleaning system and method
US20070091287A1 (en) * 2005-10-24 2007-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
US20070127001A1 (en) * 2005-12-02 2007-06-07 Asml Netherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US20090066922A1 (en) * 2006-05-18 2009-03-12 Nikon Corporation Exposure method and apparatus, maintenance method and device manufacturing method
US20070285631A1 (en) * 2006-05-22 2007-12-13 Asml Netherland B.V Lithographic apparatus and lithographic apparatus cleaning method
US20080002164A1 (en) * 2006-06-29 2008-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography

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Publication number Priority date Publication date Assignee Title
US20140185023A1 (en) * 2012-12-27 2014-07-03 Samsung Display Co., Ltd. Apparatus for removing solvent and photolithography apparatus using the same
US9372415B2 (en) * 2012-12-27 2016-06-21 Samsung Display Co., Ltd. Apparatus for removing solvent and photolithography apparatus using the same
US20150241789A1 (en) * 2014-02-25 2015-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. In-line inspection and clean for immersion lithography
US9658536B2 (en) * 2014-02-25 2017-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. In-line inspection and clean for immersion lithography
WO2018203066A1 (en) * 2017-05-04 2018-11-08 Imrali Ahmet Slide cleaner
US11779962B2 (en) 2017-05-04 2023-10-10 Ahmet Imrali Slide cleaner
WO2020064265A1 (en) 2018-09-24 2020-04-02 Asml Netherlands B.V. A process tool and an inspection method
US11720032B2 (en) 2018-09-24 2023-08-08 Asml Netherlands B.V. Process tool and an inspection method

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CN101390194B (zh) 2011-04-20
WO2008001871A1 (fr) 2008-01-03
EP2043134A4 (en) 2012-01-25
CN101390194A (zh) 2009-03-18
EP2043134A1 (en) 2009-04-01
JP5245825B2 (ja) 2013-07-24
TW200819920A (en) 2008-05-01
KR20090033170A (ko) 2009-04-01

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